KR100273223B1 - Apparatus for low pressure chemical vapor deposition - Google Patents

Apparatus for low pressure chemical vapor deposition Download PDF

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KR100273223B1
KR100273223B1 KR1019970041070A KR19970041070A KR100273223B1 KR 100273223 B1 KR100273223 B1 KR 100273223B1 KR 1019970041070 A KR1019970041070 A KR 1019970041070A KR 19970041070 A KR19970041070 A KR 19970041070A KR 100273223 B1 KR100273223 B1 KR 100273223B1
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South Korea
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deposition
line
discharge
discharge line
gas
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KR1019970041070A
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Korean (ko)
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KR19990017979A (en
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조민구
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김영환
현대반도체주식회사
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

PURPOSE: A low pressure chemical vapor deposition apparatus is provided to improve productivity by reducing a deposition process time and preventing a choking phenomenon of an exhaust hole. CONSTITUTION: A boat(12) including a semiconductor wafer(W) is loaded on a deposition furnace(13). A deposition furnace heating portion is installed in the deposition furnace(13). A deposition gas supply line(14) is used for supplying a deposition gas to a deposition line. A purge gas supply line(15) is used for transferring a reactant and a non-reaction gas. A cleaning gas supply line(16) is connected with the deposition furnace(13) to clean the semiconductor wafer(W). A cleaning gas circulation line(19) is connected between both ends of the deposition furnace(13) to circulate a cleaning gas. The first exhaust line(18) is connected with the deposition furnace to exhaust the reactant, the non-reaction gas, and the cleaning gas. The first exhaust pump(20) is installed in the first exhaust line. The second exhaust line(18') is connected with a middle portion of the first exhaust line(18). The second exhaust pump(20') is installed in the second exhaust line(18'). A switch valve(21) is installed in a connection portion between the first and the second exhaust lines(18,18').

Description

저압화학기상증착장치{APPARATUS FOR LOW PRESSURE CHEMICAL VAPOR DEPOSITION}Low Pressure Chemical Vapor Deposition Equipment {APPARATUS FOR LOW PRESSURE CHEMICAL VAPOR DEPOSITION}

본 발명은 저압화학기상증착장치에 관한 것으로, 특히 증착로내의 반도체 웨이퍼를 세정할 수 있는 세정가스를 공급하는 세정가스공급라인을 설치하고, 또 상기 증착로의 배출관에 전환밸브와 그 배출관을 일정한 온도로 유지할 수 있는 가열장치를 설치하여 증착되는 반도체 웨이퍼의 세정불량을 방지함과 아울러 미반응물질과 잉여 증착가스에 의한 배출관의 막힘현상을 방지하여 장치의 다운현상을 방지할 수 있도록 한 저압화학기상증착장치에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a low pressure chemical vapor deposition apparatus. In particular, a cleaning gas supply line for supplying a cleaning gas for cleaning a semiconductor wafer in a deposition furnace is provided, and a switching valve and the discharge pipe are fixed to the discharge pipe to the deposition furnace. Low pressure chemistry to prevent the cleaning of semiconductor wafers deposited by installing a heating device that can be maintained at temperature and to prevent the down phenomenon of the device by preventing clogging of the discharge pipe by unreacted material and excess deposition gas The present invention relates to a vapor deposition apparatus.

일반적으로, 반도체 패키지 제조공정의 중간 제품의 하나인 반도체 웨이퍼를 증착하는 저압화학기상증착장치(1)는 상기 도 1에 도시된 바와 같이, 증착할 다수개의 상기 반도체 웨이퍼(W)가 장입된 보트(2)가 위치하는 증착로(3)가 형성설치되어 있고, 그 증착로(3)에는 상기 반도체 웨이퍼(W)를 증착하는 증착가스를 공급하는 증착가스공급라인(4)이 설치되어 있으며, 또 상기 증착로(3)를 퍼지(Purge)시킴과 아울러 그 증착로(3)에서 발생하는 반응생성물을 운반하는 질소가스를 공급하는 퍼지가스공급라인(5)이 설치되어 있다.In general, a low pressure chemical vapor deposition apparatus 1 for depositing a semiconductor wafer, which is one of intermediate products of a semiconductor package manufacturing process, has a boat loaded with a plurality of the semiconductor wafers W to be deposited, as shown in FIG. 1. A deposition furnace 3 in which (2) is located is formed, and a deposition gas supply line 4 for supplying a deposition gas for depositing the semiconductor wafer W is provided in the deposition furnace 3. In addition, a purge gas supply line 5 for purging the deposition furnace 3 and supplying nitrogen gas for transporting reaction products generated in the deposition furnace 3 is provided.

그리고, 상기 증착로(3)에는 일정한 온도를 유지할 수 있는 가열장치인 히팅코일(6)이 설치되어 있고, 또 반응생성물과 미반응가스를 펌핑하는 배출펌프(7)가 설치된 배출라인(8)이 형성되어 있다.In the deposition furnace 3, a heating coil 6, which is a heating device capable of maintaining a constant temperature, is installed, and a discharge line 8 provided with a discharge pump 7 for pumping a reaction product and unreacted gas. Is formed.

상기와 같이, 구성된 저압화학기상증착장치(1)는 먼저, 증착할 반도체 웨이퍼(W)가 장입된 보트(2)가 상기 증착로(3)에 장입됨과 아울러 상기 상기 증착가스공급라인(4)을 통하여 증착가스의 하나인 SiH4가 공급되고, 상기 퍼지가스공급라인(5)을 통하여 퍼지가스인 질소가스가 공급된다.As described above, in the low pressure chemical vapor deposition apparatus 1, the boat 2 into which the semiconductor wafer W to be deposited is loaded is charged into the deposition furnace 3, and the deposition gas supply line 4 is provided. SiH4, which is one of the deposition gases, is supplied through the nitrogen gas, and nitrogen gas, which is a purge gas, is supplied through the purge gas supply line 5.

이때, 상기 증착로(3)에서 생성된 반응생성물과 미반응가스는 배출펌프(7)의 펌핑에 의하여 상기 배출라인(8)으로 배출되게 되고, 또 상기 증착로(3)는 히팅코일(6)에 의하여 일정한 온도를 유지하게 되는 것이다.At this time, the reaction product and the unreacted gas generated in the deposition furnace (3) is discharged to the discharge line (8) by the pumping of the discharge pump (7), and the deposition furnace (3) is a heating coil (6) To maintain a constant temperature.

그러나, 상기와 같이 구성된 저압화학기상증착장치는 상기 반도체 웨이퍼를 1차 증착한 후 상기 증착로의 외부에서 그 반도체 웨이퍼를 다시 세정한 다음 2차 이상의 증착을 해야 되기 때문에 많은 공정시간이 소모되고, 또 상기 증착로와 그 증착로의 배출구의 온도차가 크게 되어 그 배출구에서 상기 반응생성물이 막히게 되어 장치의 다운현상을 초래하므로써, 생산성을 저하시키게 되는 문제점이 있었다.However, the low pressure chemical vapor deposition apparatus configured as described above consumes a lot of processing time because the semiconductor wafer is first deposited, the semiconductor wafer is washed again outside the deposition furnace, and the second or more deposition is performed. In addition, there is a problem in that the temperature difference between the deposition furnace and the outlet of the deposition furnace is increased so that the reaction product is blocked at the outlet, resulting in downtime of the apparatus, thereby lowering productivity.

따라서, 본 발명의 목적은 상기의 문제점을 해결하여 증착공정시간을 단축하고, 또 상기 배출구의 막힘현상을 방지함과 아울러 장치의 다운현상을 방지하여 생산성을 향상할 수 있는 저압화학기상증착장를 제공함에 있다.Accordingly, an object of the present invention is to solve the above problems, to shorten the deposition process time, and to prevent the clogging of the discharge port and also to prevent the down phenomenon of the device to provide a low pressure chemical vapor deposition plant that can improve the productivity. Is in.

도 1은 종래 기술에 의한 저압화학기상증착장치의 구조를 보인 개략도.1 is a schematic view showing the structure of a low pressure chemical vapor deposition apparatus according to the prior art.

도 2는 본 발명에 의한 저압화학기상증착장치의 구조를 보인 개략도.Figure 2 is a schematic view showing the structure of a low pressure chemical vapor deposition apparatus according to the present invention.

** 도면의 주요 부분에 대한 부호의 설명 **** Description of symbols for the main parts of the drawing **

11 : 저압화학기상증착장치 13 : 증착로11: low pressure chemical vapor deposition apparatus 13

14 : 증착가스공급라인 15 : 퍼지가스공급라인14: deposition gas supply line 15: purge gas supply line

16 : 세정가스공급라인 17,17' : 히터코일16: cleaning gas supply line 17, 17 ': heater coil

18,18' : 배출라인 19 : 순환라인18,18 ': discharge line 19: circulation line

20,20' : 배출펌프20,20 ': discharge pump

본 발명의 목적은 반도체 웨이퍼가 장입된 보트가 안착되는 증착로와, 상기 증착로에 설치되어 일정한 온도를 유지하는 증착로가열장치와, 상기 증착로에 증착가스를 공급하기 위한 증착가스공급라인과, 상기 증착로에서 생성된 반응생성물과 미반응가스를 운반하는 퍼지가스공급라인과, 상기 증착로에 연결되어 증착된 반도체 웨이퍼를 세정하는 세정가스를 공급하는 세정가스공급라인과, 상기 증착로의 양단 사이에 연결되어 세정가스를 순환시키는 세정가스 순환라인과, 상기 증착로에 연결되어 반응생성물과 미반응가스 및 세정가스를 배출하는 제1 배출라인과, 상기 제1 배출라인에 설치된 제1 배출펌프와, 상기 제1 배출라인의 도중에 연결되는 제2 배출라인과, 상기 제2 배출라인에 설치되는 제2 배출펌프와, 상기 제1 배출라인과 제2 배출라인의 연결부에 설치되어 제1 배출라인과 제2 배출라인을 개폐하거나 상기 증착로에 제1 배출라인과 제2 배출라인이 연통되는 상태로 전환시키는 전환밸브가 구비된 것을 특징으로 하는 저압화학기상증착장치에 의하여 달성된다.An object of the present invention is a deposition furnace in which a boat loaded with a semiconductor wafer is seated, a deposition furnace heating apparatus installed in the deposition furnace to maintain a constant temperature, and a deposition gas supply line for supplying deposition gas to the deposition furnace; A purge gas supply line for carrying the reaction product and the unreacted gas generated in the deposition furnace, a cleaning gas supply line for supplying a cleaning gas for cleaning the semiconductor wafer deposited in connection with the deposition furnace, and the deposition furnace A cleaning gas circulation line connected between both ends to circulate the cleaning gas, a first discharge line connected to the deposition path to discharge the reaction product, the unreacted gas and the cleaning gas, and a first discharge line installed in the first discharge line A pump, a second discharge line connected in the middle of the first discharge line, a second discharge pump installed in the second discharge line, the first discharge line and the second discharge line Low pressure chemical vapor deposition apparatus is installed in the connection portion is provided with a switching valve for opening and closing the first discharge line and the second discharge line or switching to the state in which the first discharge line and the second discharge line is in communication with the deposition furnace. Is achieved.

또, 상기 배출라인에는 온도를 일정하게 유지할 수 있는 배출라인가열장치가 설치된 것을 특징으로 한다.In addition, the discharge line is characterized in that the discharge line heating device is installed that can maintain a constant temperature.

다음은, 본 발명에 의한 저압화학기상증착장치의 바람직한 일실시예를 첨부된 도면에 의거하여 상세하게 설명한다.Next, a preferred embodiment of a low pressure chemical vapor deposition apparatus according to the present invention will be described in detail with reference to the accompanying drawings.

도 2는 본 발명에 의한 저압화학기상증착장치의 구조를 보인 개략도이다.2 is a schematic view showing the structure of a low pressure chemical vapor deposition apparatus according to the present invention.

상기 도 2에 도시된 바와 같이 본 발명에 의한 저압화학기상증착장치(11)는, 증착할 다수개의 반도체 웨이퍼(W)가 장입된 보트(12)가 안착되는 증착로(13)가 형성되어 있고, 그 증착로(13)에는 상기 반도체 웨이퍼(W)를 증착할 증착가스인 SiH4를 공급하는 증착가스공급라인(14)이 설치되어 있으며, 또 상기 증착로(13)에는 상기 반도체 웨이퍼(W)와 증착반응된 반응생성물과 미반응가스를 운반하는 질소가스를 공급하는 퍼지가스공급라인(15)이 설치되어 있다.As shown in FIG. 2, the low pressure chemical vapor deposition apparatus 11 according to the present invention includes a deposition furnace 13 in which a boat 12 into which a plurality of semiconductor wafers W to be deposited are mounted is seated. The deposition furnace 13 is provided with a deposition gas supply line 14 for supplying SiH4, which is a deposition gas for depositing the semiconductor wafer W, and the deposition wafer 13 is provided with the semiconductor wafer W. And a purge gas supply line 15 for supplying nitrogen gas for transporting the reacted reaction product and the unreacted gas is deposited.

그리고, 상기 증착로(13)에는 그 증착로(13)에서 1차 증착된 상기 반도체 웨이퍼(W)를 세정할 수 있는 세정가스인 NF3를 공급하는 세정가스공급라인(16)이 설치되어 있고, 상기 증착로(13)의 온도를 일정하게 유지할 수 있도록 하는 증착로가열장치인 히터코일(17)이 설치되어 있으며, 그리고 또 상기 증착로(13)에는 생성된 반응생성물과 미반응가스 및 세정가스가 배출되는 배출라인(18)이 설치되어 있고, 상기 세정가스공급라인(16)을 통하여 공급된 세정가스를 순환시킬 수 있는 순환라인(19)이 그 세정가스공급라인(16)과 연결설치되어 있다.The deposition furnace 13 is provided with a cleaning gas supply line 16 for supplying NF 3, which is a cleaning gas capable of cleaning the semiconductor wafer W deposited primarily in the deposition furnace 13, The heater coil 17 which is a deposition furnace heating apparatus for maintaining the temperature of the deposition furnace 13 is installed, and the reaction product, the unreacted gas and the cleaning gas generated in the deposition furnace 13 are installed. Is provided with a discharge line 18 for discharging gas, and a circulation line 19 for circulating the cleaning gas supplied through the cleaning gas supply line 16 is connected to the cleaning gas supply line 16. have.

상기 증착로(13)의 양단 사이에는 세정가스를 순환시키기 위한 세정가스 순환라인(19)이 연결 설치되어 있다.A cleaning gas circulation line 19 for circulating the cleaning gas is connected between both ends of the deposition furnace 13.

상기 배출라인(18)은 상기 증착로(13)내의 반응생성물과 미반응가스의 온도를 일정하게 유지시킬 수 있는 배출라인가열장치인 히터코일(17')이 설치되어 있고, 또 상기 배출라인(18)에는 미반응가스와 반응생성물 및 세정가스를 펌핑할 수 있는 배출펌프(20)가 설치되어 있다.The discharge line 18 is provided with a heater coil 17 'which is a discharge line heating device capable of maintaining a constant temperature of the reaction product and the unreacted gas in the deposition furnace 13, and the discharge line ( 18, the discharge pump 20 that can pump the unreacted gas, the reaction product and the cleaning gas is installed.

또한 상기 배출라인(18)의 도중에서 개폐 및 방향전환이 가능한 전환밸브(21)가 설치되고, 이 전환밸브(21)에는 증착로(13)내의 반응생성물과 미반응가스를 배출하기 위한 배출라인(18')가 연결되고, 이 배출라인(18')에는 배출펌프(20')가 설치되어 있다.In addition, a switching valve 21 capable of opening and closing and redirection in the middle of the discharge line 18 is installed, and the switching valve 21 has a discharge line for discharging the reaction product and the unreacted gas in the deposition furnace 13. 18 'is connected, and the discharge line 18' is provided with a discharge pump 20 '.

상기 전환밸브(21)를 폐쇄하였을 때는 세정가스공급라인(16)을 통해 증착로(13)내로 공급된 세정가스가 세정가스 순환라인(19)을 통해 계속적으로 순환할 수 있도록 되어 있으며, 전환밸브(21)가 증착로(13)와 배출라인(18)을 연통하도록 전환된 상태에서는 증착로(13)내의 반응생성물과 미반응가스 및 세정가스가 배출펌프(20)의 작용에 의해 배출라인(18)을 통해 배출되도록 되어 있고, 전환밸브(21)가 증착로(13)와 배출라인(18')을 연통하도록 전환된 상태에서는 증착로(13)내의 반응생성물과 미반응가스가 배출라인(18')을 통하여 배출되도록 되어 있다.When the switching valve 21 is closed, the cleaning gas supplied into the deposition furnace 13 through the cleaning gas supply line 16 can continuously circulate through the cleaning gas circulation line 19, and the switching valve In a state in which 21 is switched to communicate with the deposition furnace 13 and the discharge line 18, the reaction product, the unreacted gas and the cleaning gas in the deposition furnace 13 are discharged by the action of the discharge pump 20 ( 18, the reaction product and the unreacted gas in the deposition furnace 13 is discharged in the state in which the switching valve 21 is switched to communicate with the deposition furnace 13 and the discharge line 18 '. 18 ').

상기와 같이 구성된 저압화학기상증착장치(11)는, 먼저 증착할 반도체 웨이퍼(W)가 장입된 보트(12)가 상기 증착로(13)에 안착됨과 아울러 상기 증착가스공급라인(14)과 퍼지가스공급라인(15)을 통하여 증착가스와 질소가스가 공급되어 상기 반도체 웨이퍼(W)가 증착되고, 이때 상기 증착로가열장치인 히터코일(17)에 의하여 상기 증착로(13)는 일정한 온도를 유지하게 되며, 또 상기 증착로(13)내에서 생성된 반응생성물과 미반응가스는 상기 배출라인가열장치인 히터코일(17')에 의하여 상기 증착로(13)에서와 같은 일정한 온도를 유지하면서 배출라인(18)(18')에 설치된 배출펌프(20)(20')의 펌핑에 의하여 배출되게 된다.In the low pressure chemical vapor deposition apparatus 11 configured as described above, the boat 12 into which the semiconductor wafer W to be deposited is first placed is seated in the deposition furnace 13 and the deposition gas supply line 14 and the purge. Deposition gas and nitrogen gas are supplied through a gas supply line 15 to deposit the semiconductor wafer W. At this time, the deposition furnace 13 is maintained at a constant temperature by the heater coil 17 serving as the deposition furnace heating apparatus. In addition, the reaction product and the unreacted gas generated in the deposition furnace 13 are maintained at the same temperature as in the deposition furnace 13 by the heater coil 17 'which is the discharge line heater. It is discharged by the pumping of the discharge pump 20, 20 'installed in the discharge line 18, 18'.

이때, 상기 전환밸브(21)를 증착로(13)에 배출라인(18)이 연통되도록 전환시키면 증착로(13)내의 반응생성물과 미반응가스 및 세정가스가 배출펌프(20)의 작용으로 배출라인(18)을 통하여 배출되고, 상기 전환밸브(21)를 증착로(13)에 배출라인(18')이 연통되도록 전환시키면 증착로(13)내의 반응생성물과 미반응가스 및 세정가스가 배출펌프(20')의 작용으로 배출라인(18')을 통하여 배출되며, 상기 전환밸브(21)를 증착로(13)에 배출라인(18)과 (18') 모두가 연통되도록 전환한 상태에서는 증착로(13)내의 반응생성물과 미반응가스 및 세정가스가 펌프(20)(20')의 작용으로 배출라인(18)(18')을 토??여 배출되는 것이다.At this time, when the switching valve 21 is switched so that the discharge line 18 communicates with the deposition furnace 13, the reaction product, the unreacted gas and the cleaning gas in the deposition furnace 13 are discharged by the action of the discharge pump 20. When the discharge valve 18 is discharged through the line 18 and the switching valve 21 is switched so that the discharge line 18 ′ communicates with the deposition furnace 13, the reaction product, the unreacted gas and the cleaning gas in the deposition furnace 13 are discharged. In the state in which the discharge valve 18 is discharged through the discharge line 18 'by the action of the pump 20', the switching valve 21 is switched so that both the discharge line 18 and 18 'are connected to the deposition furnace 13. The reaction product, the unreacted gas and the cleaning gas in the deposition furnace 13 are discharged through the discharge lines 18 and 18 'by the action of the pumps 20 and 20'.

이와 같이 1차적으로 증착한 반도체 웨이퍼(W)는 상기 증착로(13)에 설치된 세정가스공급라인(16)을 통하여 세정가스인 NF3를 공급함으로써 세정되게 되고, 이때 세정효과를 더욱 높이기 위해서는 상기 배출라인(18)에 설치된 전환밸브(21)를 폐쇄시키면 상기 배출펌프(20,20')를 통하여 상기 세정가스가 배출되는 것이 방지되고, 세정가스가 상기 순환라인(19)을 통하여 증착로(13)내부를 연속해서 순환되면서 증착로(13)를 세정하게 되는 것이다.The semiconductor wafer W deposited as described above is cleaned by supplying NF 3, which is a cleaning gas, through the cleaning gas supply line 16 installed in the deposition furnace 13. Closing the switching valve 21 installed in the line 18 prevents the cleaning gas from being discharged through the discharge pumps 20, 20 ′, and the cleaning gas is deposited through the circulation line 19. It is to clean the deposition furnace 13 while continuously circulating inside.

상기와 같이, 증착된 반도체 웨이퍼를 세정하는 세정가스를 공급하는 세정가스공급라인과, 상기 증착로에서 생성된 반응생성물과 미반응가스가 배출라인에서 막히지 않도록 배출라인가열장치를 설치하므로써, 반도체 웨이퍼의 증착공정시간을 단축하고, 상기 배출라인에서 반응생성물이 막히게 되는 것을 방지하게 되어 장치의 다운현상을 방지함과 더불어 상기 반도체 웨이퍼의 생산성을 향상시키게 되는 효과를 기대할 수 있는 것이다.As described above, the semiconductor wafer is provided by providing a cleaning gas supply line for supplying a cleaning gas for cleaning the deposited semiconductor wafer, and a discharge line heating device so that reaction products and unreacted gases generated in the deposition furnace are not blocked in the discharge line. It is possible to expect the effect of shortening the deposition process time, preventing the reaction product from being blocked in the discharge line, preventing downtime of the device, and improving productivity of the semiconductor wafer.

Claims (2)

반도체 웨이퍼가 장입된 보트가 안착되는 증착로와, 상기 증착로에 설치되어 일정한 온도를 유지하는 증착로가열장치와, 상기 증착로에 증착가스를 공급하기 위한 증착가스공급라인과, 상기 증착로에서 생성된 반응생성물과 미반응가스를 운반하는 퍼지가스공급라인과, 상기 증착로에 연결되어 증착된 반도체 웨이퍼를 세정하는 세정가스를 공급하는 세정가스공급라인과, 상기 증착로의 양단 사이에 연결되어 세정가스를 순환시키는 세정가스 순환라인과, 상기 증착로에 연결되어 반응생성물과 미반응가스 및 세정가스를 배출하는 제1 배출라인과, 상기 제1 배출라인에 설치된 제1 배출펌프와, 상기 제1 배출라인의 도중에 연결되는 제2 배출라인과, 상기 제2 배출라인에 설치되는 제2 배출펌프와, 상기 제1 배출라인과 제2 배출라인의 연결부에 설치되어 제1 배출라인과 제2 배출라인을 개폐하거나 상기 증착로에 제1 배출라인과 제2 배출라인이 연통되는 상태로 전환시키는 전환밸브가 구비된 것을 특징으로 하는 저압화학기상증착장치.A deposition furnace in which a boat loaded with a semiconductor wafer is seated, a deposition furnace heating apparatus installed in the deposition furnace to maintain a constant temperature, a deposition gas supply line for supplying deposition gas to the deposition furnace, and in the deposition furnace A purge gas supply line for transporting the generated reaction product and unreacted gas, a cleaning gas supply line for supplying a cleaning gas for cleaning the deposited semiconductor wafer connected to the deposition furnace, and connected between both ends of the deposition furnace. A cleaning gas circulation line for circulating the cleaning gas, a first discharge line connected to the deposition path to discharge reaction products, unreacted gas and cleaning gas, a first discharge pump installed in the first discharge line, 1 is installed in the second discharge line connected to the middle of the discharge line, the second discharge pump installed in the second discharge line, and the connection of the first discharge line and the second discharge line. A first discharge line and the second discharge opening and closing the line, or the first discharge line and the second discharge line, it characterized in that the switching valve is provided to switch to the communicating state to the low-pressure chemical vapor deposition to the deposition apparatus. 제 1항에 있어서, 상기 제1 배출라인에는 온도를 일정하게 유지할 수 있는 배출라인가열장치가 설치된 것을 특징으로 하는 저압화학기상증착장치.The low pressure chemical vapor deposition apparatus according to claim 1, wherein the first discharge line is provided with a discharge line heating device capable of maintaining a constant temperature.
KR1019970041070A 1997-08-26 1997-08-26 Apparatus for low pressure chemical vapor deposition KR100273223B1 (en)

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