CN114427781A - Supercritical drying device and supercritical drying equipment - Google Patents
Supercritical drying device and supercritical drying equipment Download PDFInfo
- Publication number
- CN114427781A CN114427781A CN202011184978.XA CN202011184978A CN114427781A CN 114427781 A CN114427781 A CN 114427781A CN 202011184978 A CN202011184978 A CN 202011184978A CN 114427781 A CN114427781 A CN 114427781A
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- supercritical
- drying
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- wafer
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- 238000000352 supercritical drying Methods 0.000 title claims abstract description 73
- 238000001035 drying Methods 0.000 claims abstract description 81
- 239000012530 fluid Substances 0.000 claims abstract description 37
- 239000007921 spray Substances 0.000 claims abstract description 7
- 238000004891 communication Methods 0.000 claims abstract description 3
- 238000004140 cleaning Methods 0.000 claims description 24
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims description 12
- 230000001105 regulatory effect Effects 0.000 claims description 7
- 229910002092 carbon dioxide Inorganic materials 0.000 claims description 6
- 239000001569 carbon dioxide Substances 0.000 claims description 6
- 238000005507 spraying Methods 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 abstract description 66
- 238000000034 method Methods 0.000 abstract description 17
- 230000000712 assembly Effects 0.000 description 7
- 238000000429 assembly Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 238000005192 partition Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000012459 cleaning agent Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 231100000252 nontoxic Toxicity 0.000 description 1
- 230000003000 nontoxic effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000009967 tasteless effect Effects 0.000 description 1
Images
Classifications
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F26—DRYING
- F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
- F26B9/00—Machines or apparatus for drying solid materials or objects at rest or with only local agitation; Domestic airing cupboards
- F26B9/06—Machines or apparatus for drying solid materials or objects at rest or with only local agitation; Domestic airing cupboards in stationary drums or chambers
- F26B9/066—Machines or apparatus for drying solid materials or objects at rest or with only local agitation; Domestic airing cupboards in stationary drums or chambers the products to be dried being disposed on one or more containers, which may have at least partly gas-previous walls, e.g. trays or shelves in a stack
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F26—DRYING
- F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
- F26B21/00—Arrangements or duct systems, e.g. in combination with pallet boxes, for supplying and controlling air or gases for drying solid materials or objects
- F26B21/14—Arrangements or duct systems, e.g. in combination with pallet boxes, for supplying and controlling air or gases for drying solid materials or objects using gases or vapours other than air or steam, e.g. inert gases
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F26—DRYING
- F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
- F26B25/00—Details of general application not covered by group F26B21/00 or F26B23/00
- F26B25/06—Chambers, containers, or receptacles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The invention provides a supercritical drying device and supercritical drying equipment, which are used for drying wafers. The supercritical drying apparatus includes a drying chamber having at least two chambers, and the at least two chambers are in communication with each other. A stage for holding a wafer thereon and a nozzle assembly disposed above the stage are disposed within each chamber, wherein the nozzle assembly is configured to spray supercritical fluid onto a surface of the wafer held on the stage. In the scheme, the space formed by at least two chambers is used as the drying chamber, and a set of carrier and nozzle assembly is arranged in each chamber, so that at least two wafers can be dried by a supercritical drying process at one time, batch drying of the wafers is realized, and the efficiency of drying the wafers by the supercritical drying device is improved.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a supercritical drying device and supercritical drying equipment.
Background
With the increase of the integration level of semiconductor device products, the ability of drying the wafer after the cleaning agent etching process becomes an important factor affecting the yield. If the drying capability of the wafer after the cleaning and etching processes is insufficient, problems such as reduction of product yield and deterioration of characteristics will occur. Drying methods using supercritical fluids have been developed and are being used in semiconductor manufacturing processes. However, in the supercritical drying apparatus in the prior art, a single chamber is adopted as a drying chamber, only one wafer surface can be dried at a time, and the efficiency is low.
Disclosure of Invention
The invention provides a supercritical drying device and supercritical drying equipment, which are used for improving the efficiency of drying a wafer by the supercritical drying device.
In a first aspect, the present invention provides a supercritical drying apparatus for drying a wafer. The supercritical drying apparatus includes a drying chamber having at least two chambers, and the at least two chambers are in communication with each other. A stage for holding a wafer thereon and a nozzle assembly disposed above the stage are disposed within each chamber, wherein the nozzle assembly is configured to spray supercritical fluid onto a surface of the wafer held on the stage.
In the scheme, the space formed by at least two chambers is used as the drying chamber, and a set of carrier and nozzle assembly is arranged in each chamber, so that at least two wafers can be dried by a supercritical drying process at one time, batch drying of the wafers is realized, and the efficiency of drying the wafers by the supercritical drying device is improved.
In one embodiment, the number of chambers included in the drying chamber is two, three or four, so that a multi-chamber drying chamber can be provided.
In one embodiment, the supercritical fluid is carbon dioxide in a supercritical state to facilitate drying of the wafer using a supercritical process.
In a specific embodiment, a pressure adjusting device for adjusting the pressure in at least two chambers to a set pressure is further provided in the drying chamber, so as to control the pressure in the drying chamber, and thus to control whether the supercritical fluid ejected from the nozzle is maintained in a supercritical state, a vaporized or liquefied state, or the like.
In one embodiment, when the nozzle assembly sprays the supercritical fluid on the surface of the wafer, the pressure is set to be higher than the critical pressure of the supercritical fluid, so that the supercritical fluid sprayed from the nozzle assembly can be kept in a supercritical state after entering the chamber.
In a specific embodiment, the supercritical drying apparatus further comprises a main delivery pipe for delivering the supercritical fluid to the drying chamber, and at least two sub-delivery pipes each communicated with the main delivery pipe, wherein the at least two sub-delivery pipes are in one-to-one correspondence with the at least two nozzle assemblies, and each sub-delivery pipe is communicated with the corresponding nozzle assembly. So as to control the operation of a plurality of nozzle assemblies simultaneously or any number of nozzle assemblies.
In a specific embodiment, the drying chamber is further provided with an outlet for discharging the supercritical fluid flowing down from the surface of the wafer out of at least two chambers to discharge the remaining supercritical fluid in the drying chamber.
In a specific embodiment, one discharge port is arranged in each chamber, each discharge port is communicated with one branch discharge pipe, and the other end of each branch discharge pipe is also communicated with the same main discharge pipe. When the remaining supercritical fluid is discharged from the chambers, the chambers do not interfere with each other.
In a specific embodiment, a temperature adjusting device is further arranged in the drying chamber, and the temperature adjusting device is used for adjusting the temperature of at least two chambers to be set temperature. In order to control the temperature in the drying chamber.
In one embodiment, the supporting surface of the stage is provided with vacuum suction holes for sucking the wafer, so as to fix the wafer on the stage and prevent the wafer from moving when the supercritical fluid is sprayed on the surface of the wafer by the nozzle.
In a second aspect, the present invention further provides a supercritical drying apparatus comprising a support structure on which m cleaning devices are arranged, each cleaning device cleaning one wafer at a time. The support structure is also provided with n supercritical drying apparatuses of any one of the above.
In the scheme, the space formed by at least two chambers is used as the drying chamber, and a set of carrier and nozzle assembly is arranged in each chamber, so that at least two wafers can be dried by a supercritical drying process at one time, batch drying of the wafers is realized, and the efficiency of drying the wafers by the supercritical drying device is improved.
In one embodiment, a robot working area is further provided on the support structure, and a plurality of groups of robots for taking out or putting in the wafer from or into the cleaning device or the supercritical drying device are provided on the robot working area, so that the production efficiency is improved, and the labor cost is saved.
Drawings
FIG. 1 is a schematic view showing a configuration of a supercritical drying apparatus according to the prior art;
FIG. 2 is a schematic structural diagram of a supercritical drying apparatus according to an embodiment of the present invention;
FIG. 3 is a schematic structural diagram of another supercritical drying apparatus according to an embodiment of the present invention;
FIG. 4 is a schematic structural diagram of another supercritical drying apparatus according to an embodiment of the present invention;
fig. 5 is a schematic structural diagram of a supercritical drying apparatus according to an embodiment of the present invention.
Reference numerals in fig. 1:
1-drying chamber 2-carrying platform 3-wafer 4-nozzle assembly
Reference numerals in fig. 2 to 5:
10-drying chamber 11-chamber 12-discharge port 20-carrying platform 21-wafer
30-nozzle assembly 40-total delivery pipe 41-branch delivery pipe
50-main discharge pipe 51-branch discharge pipe 52-valve
61-pressure regulating device 62-temperature regulating device 70-support structure
71-supercritical drying device 72-cleaning device 73-manipulator working area 74 manipulator
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In order to facilitate understanding of the supercritical drying apparatus provided in the embodiment of the present invention, an application scenario of the supercritical drying apparatus provided in the embodiment of the present invention is first described below, where the supercritical drying apparatus is applied to drying a wafer that has undergone a cleaning process or an etching process. The supercritical drying apparatus will be described in detail below with reference to the drawings.
Referring to fig. 2, the supercritical drying apparatus provided by the embodiment of the present invention includes a drying chamber 10 having at least two chambers 11, and the at least two chambers 11 are communicated with each other. Disposed within each chamber 11 are a stage 20 for holding a wafer 21 thereon, and a nozzle assembly 30 disposed above the stage 20, wherein the nozzle assembly 30 is used to spray a supercritical fluid onto the surface of the wafer 21 held on the stage 20.
In the above scheme, the space formed by at least two chambers 11 is used as the drying chamber 10, and a set of the stage 20 and the nozzle assembly 30 is arranged in each chamber 11, so that at least two wafers 21 can be dried by a supercritical drying process at a time, batch drying of the wafers 21 is realized, and efficiency of drying the wafers 21 by the supercritical drying device is improved. The arrangement of the above components will be described in detail with reference to the accompanying drawings.
In providing the drying chamber 10, referring to fig. 2 to 4, the drying chamber 10 has at least two chambers 11, and each chamber 11 is used for accommodating one wafer 21. And the at least two chambers 11 are communicated with each other, that is, any two adjacent chambers 11 are communicated together without a partition plate between the two chambers, thereby simplifying the structure. In determining the number of chambers 11 included in the drying chamber 10, referring to fig. 2, the number of chambers 11 included in the drying chamber 10 may be two, so that the drying chamber 10 is a space having two chambers. Referring to fig. 3, the number of the chambers 11 included in the drying chamber 10 may be three, so that the drying chamber 10 is a space having three chambers. Referring to fig. 4, the number of the chambers 11 included in the drying chamber 10 may be four, so that the drying chamber 10 has a space with four chambers. By adopting the arrangement mode, the two adjacent chambers 11 are not separated by the partition plate, so that the occupied area of the partition plate can be reduced, and the space utilization rate is improved. While also facilitating observation of the state of the wafer 21 on each stage 20 within the drying chamber 10.
With continued reference to fig. 2-4, a stage 20 is also provided within each chamber 11 for holding a wafer 21 thereon for holding and supporting the wafer 21. When the stage 20 is provided, a vacuum suction hole for sucking the wafer 21 may be provided on a support surface of the stage 20 so as to fix the wafer 21 on the stage 20 and prevent the wafer 21 from moving when the supercritical fluid is sprayed from the nozzle to the surface of the wafer 21.
As shown in fig. 2, a nozzle assembly 30 is further disposed in each chamber 11, the nozzle assembly 30 is disposed above the stage 20, and when the wafer 21 is placed on the stage 20, the nozzle assembly 30 is also located above the wafer 21. The nozzle assembly 30 is used to spray supercritical fluid onto the surface of the wafer 21 held on the stage 20 to dry the surface of the wafer 21 using supercritical fluid technology.
Fig. 1 shows a supercritical drying apparatus in the prior art, which includes a single-chamber drying chamber 1, and a stage 2 for placing a wafer 3 is disposed in the drying chamber 1. Correspondingly, a nozzle assembly 4 is arranged on the carrier 2. By adopting the supercritical drying device, only one wafer can be dried at a time, so that the drying efficiency is low and the time limit requirement cannot be met. In the supercritical drying device shown in fig. 2 to 5, a space formed by at least two chambers 11 is used as the drying chamber 10, and a set of carrier 20 and nozzle assembly 30 is arranged in each chamber 11, so that at least two wafers 21 can be dried by a supercritical drying process at a time, batch drying of the wafers 21 is realized, and the efficiency of drying the wafers 21 by the supercritical drying device is improved.
In selecting the kind of the supercritical fluid, the supercritical fluid may be carbon dioxide in a supercritical state. Since the carbon dioxide is easy to enter into the supercritical state, the supercritical process is adopted to dry the wafer 21. The carbon dioxide supercritical fluid also has the advantages of zero surface tension, low viscosity, strong diffusion capacity and dissolving capacity, and can effectively clean and supercritically dry the fine structure on the wafer 21. In addition, carbon dioxide is tasteless, nontoxic, non-combustion-supporting and environment-friendly, and is an ideal cleaning medium.
In particular, in the case of delivering the supercritical fluid into each chamber 11, referring to fig. 2 to 4, a total delivery pipe 40 may be provided, and the total delivery pipe 40 is responsible for delivering the supercritical fluid to the entire drying chamber 10. The main duct 40 is also connected to at least two sub-ducts 41, the number of the sub-ducts 41 is the same as the number of the chambers 11 included in the drying chamber 10, the at least two sub-ducts 41 are in one-to-one correspondence with the at least two nozzle assemblies 30, and each sub-duct 41 is connected to a corresponding nozzle assembly 30. That is, the nozzle assembly 30 in each chamber 11 is communicated with one branch delivery pipe 41, and the nozzle assembly 30 in each chamber 11 receives the supercritical fluid from the main delivery pipe 40 through the communicated branch delivery pipe 41. The branch ducts 41 for supplying the supercritical fluid into the respective chambers 11 are not interfered with each other. In use, multiple nozzle assemblies 30 may be controlled to operate simultaneously, i.e., with a wafer 21 placed in each chamber 11. Any number of nozzle assemblies 30 may also be controlled to operate, i.e., only the nozzle assemblies 30 in the chamber 11 in which the wafer 21 is placed may be operated, and others may not be operated.
Referring to fig. 2, a pressure adjusting device 61 for adjusting the pressure in at least two chambers 11 to a set pressure may be further provided in the drying chamber 10, so as to control the pressure in the drying chamber 10, and thus to control whether the supercritical fluid ejected from the nozzle is maintained in a supercritical state, a vaporized or liquefied state, or the like. The pressure regulating means 61 is provided in a manner of adjusting means capable of adjusting the pressure in a certain sealed chamber 11, which is conventional in the art. A pressure sensor for measuring the pressure in each chamber 11 may be provided in each chamber 11 of the drying chamber 10, and the data measured by the pressure sensor is transmitted to the pressure adjusting device 61, and the pressure adjusting device 61 performs the pressure increasing or pressure decreasing adjustment of the drying chamber 10.
When the nozzle unit 30 sprays the supercritical fluid on the surface of the wafer 21, the pressure adjusting device 61 can adjust the set pressure in the drying chamber 10 to be higher than the critical pressure of the supercritical fluid, so that the supercritical fluid discharged from the nozzle unit 30 can be maintained in a supercritical state after entering the chamber 11.
Referring to fig. 2, a temperature adjusting device 62 may be further provided in the drying chamber 10, the temperature adjusting device 62 being used to adjust the temperature of at least two chambers 11 to a set temperature. In order to control the temperature within the drying chamber 10. It is also possible to provide a temperature sensor in each chamber 11, which transmits its measured data to the temperature adjustment device 62 for reference when the temperature adjustment device 62 adjusts the temperature in the drying chamber 10.
Referring to fig. 2, an exhaust port 12 for exhausting the supercritical fluid flowing down from the surface of the wafer 21 out of at least two chambers 11 is further provided in the drying chamber 10 to exhaust the supercritical fluid remaining in the drying chamber 10. In the specific arrangement of the discharge ports 12, referring to fig. 2, one discharge port 12 may be provided in each chamber 11, one branch discharge pipe 51 is communicated with each discharge port 12, and the other end of each branch discharge pipe 51 is also communicated with the same main discharge pipe 50. When the remaining supercritical fluid is discharged from the chambers 11, the discharge is not interfered with each other. Referring to fig. 2, a valve 52 may be further installed at each sub-discharge pipe 51 to control the opening or closing of each sub-discharge pipe 51.
By adopting the space formed by at least two chambers 11 as the drying chamber 10 and arranging one set of the carrier 20 and the nozzle assembly 30 in each chamber 11, at least two wafers 21 can be dried by a supercritical drying process at one time, so that batch drying of the wafers 21 is realized, and the efficiency of drying the wafers 21 by the supercritical drying device is improved.
In addition, referring to fig. 2 to 5, the supercritical drying apparatus according to an embodiment of the present invention includes a support structure 70, m cleaning devices 72 are disposed on the support structure 70, and each cleaning device 72 cleans one wafer 21 at a time. The support structure 70 is further provided with n supercritical drying apparatuses 71 of any one of the above.
In the above solution, by using the space formed by at least two chambers 11 as the drying chamber 10 and providing one set of the stage 20 and the nozzle assembly 30 in each chamber 11, at least two wafers 21 can be dried by the supercritical drying process at a time, so as to realize batch drying of the wafers 21 and improve the efficiency of the supercritical drying apparatus 71 for drying the wafers 21.
When determining the total number of chambers 11 included in supercritical drying apparatus 71, the total number of chambers 11 included in supercritical drying apparatus 71 and the total number of cleaning apparatuses 72 may be adjusted according to the process requirements. The total number of chambers 11 included in the n supercritical drying apparatuses 71 may be 2 m. Since the drying process usually takes twice as much time as the cleaning process, the total number of chambers 11 included in the supercritical drying apparatus 71 is twice as many as the number of cleaning apparatuses 72 in one supercritical drying apparatus, so that the cleaning apparatuses 72 and the supercritical drying apparatus 71 can both operate at full load, thereby improving the cleaning and drying efficiency of the entire apparatus. In the case of a process requiring a long drying time, the total number n of chambers 11 included in the supercritical drying apparatus 71 may be set to be larger than the total number m of the cleaning apparatuses 72. In the process in which the time required for cleaning is long, the total number n of the chambers 11 included in the supercritical drying apparatus 71 may be set to be smaller than the total number m of the cleaning apparatuses 72.
Referring to fig. 5, 6 cleaning apparatuses 72 may be provided on the support structure 70, and the drying chamber 10 of the supercritical drying apparatus 71 may be a double-chamber drying chamber 10, and in this case, 6 supercritical drying apparatuses 71 may be provided on the support structure 70, so that the 6 supercritical drying apparatuses 71 can dry the wafers 21 cleaned by the 6 cleaning apparatuses 72.
In addition, referring to fig. 5, a robot working area 73 may be further provided on the support structure 70, and a plurality of sets of robots 74 for taking out or putting in the wafer 21 from or into the cleaning device 72 or the supercritical drying device 71 may be further provided on the robot working area 73, so as to improve the production efficiency and save the labor cost. The number of sets of the robot 74 may be 2, 3, 4, or the like, or not less than 2, and specifically, it is related to the number of the supercritical drying apparatus 71 and the cleaning apparatus 72.
The above description is only for the specific embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are included in the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (10)
1. A supercritical drying apparatus for drying a wafer, comprising:
a drying chamber having at least two chambers, and the at least two chambers are in communication with each other;
each chamber is internally provided with a carrier for holding the wafer thereon and a nozzle assembly arranged above the carrier, wherein the nozzle assembly is used for spraying supercritical fluid on the surface of the wafer held on the carrier.
2. The supercritical drying apparatus according to claim 1, wherein the number of chambers contained in the drying chamber is two, three or four.
3. Supercritical drying apparatus according to claim 1, characterized in that the supercritical fluid is carbon dioxide in the supercritical state.
4. Supercritical drying apparatus according to any one of claims 1 to 3, characterized in that pressure regulating means for regulating the pressure in the at least two chambers to a set pressure is further provided in the drying chamber.
5. The supercritical drying apparatus according to claim 4 wherein the set pressure is higher than the critical pressure of the supercritical fluid when the nozzle assembly sprays the supercritical fluid onto the wafer surface.
6. The supercritical drying apparatus according to any one of claims 1 to 3, further comprising:
a main delivery pipe for delivering the supercritical fluid to the drying chamber;
all with at least two branch conveyer pipes of total conveyer pipe intercommunication, at least two branch conveyer pipes with at least two nozzle assembly one-to-one, every branch conveyer pipe and the nozzle assembly intercommunication that corresponds.
7. The supercritical drying apparatus according to any one of claims 1 to 3, wherein an exhaust port for exhausting the supercritical fluid flowing down from the surface of the wafer out of the at least two chambers is further provided in the drying chamber.
8. Supercritical drying apparatus according to claim 7, characterized in that one discharge opening is provided in each chamber;
each discharge port is communicated with a sub-discharge pipe, and the other end of each sub-discharge pipe is also communicated with the same main discharge pipe.
9. Supercritical drying apparatus according to any one of claims 1 to 3, characterized in that a temperature regulating device is further provided within the drying chamber for regulating the temperature of the at least two chambers to a set temperature.
10. A supercritical drying apparatus, characterized by comprising:
a support structure;
m cleaning devices arranged on the supporting structure, wherein each cleaning device cleans one wafer at a time;
n supercritical drying apparatus according to any one of claims 1 to 8 provided on the support structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011184978.XA CN114427781A (en) | 2020-10-29 | 2020-10-29 | Supercritical drying device and supercritical drying equipment |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011184978.XA CN114427781A (en) | 2020-10-29 | 2020-10-29 | Supercritical drying device and supercritical drying equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN114427781A true CN114427781A (en) | 2022-05-03 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011184978.XA Pending CN114427781A (en) | 2020-10-29 | 2020-10-29 | Supercritical drying device and supercritical drying equipment |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW487221U (en) * | 2001-01-19 | 2002-05-11 | Touchtek Corp | Drying apparatus for wafer |
| CN101338967A (en) * | 2007-07-06 | 2009-01-07 | 鸿富锦精密工业（深圳）有限公司 | Vacuum drying machine and its drying method |
| CN103151285A (en) * | 2011-12-07 | 2013-06-12 | 三星电子株式会社 | Apparatus and methods for treating a substrate |
| CN210718396U (en) * | 2019-10-31 | 2020-06-09 | 湖北隶德生物工程有限公司 | Electric heating mute drying box |
-
2020
- 2020-10-29 CN CN202011184978.XA patent/CN114427781A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW487221U (en) * | 2001-01-19 | 2002-05-11 | Touchtek Corp | Drying apparatus for wafer |
| CN101338967A (en) * | 2007-07-06 | 2009-01-07 | 鸿富锦精密工业（深圳）有限公司 | Vacuum drying machine and its drying method |
| CN103151285A (en) * | 2011-12-07 | 2013-06-12 | 三星电子株式会社 | Apparatus and methods for treating a substrate |
| CN107170700A (en) * | 2011-12-07 | 2017-09-15 | 三星电子株式会社 | The apparatus and method for handling substrate |
| CN210718396U (en) * | 2019-10-31 | 2020-06-09 | 湖北隶德生物工程有限公司 | Electric heating mute drying box |
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Application publication date: 20220503 |