KR100797887B1 - Diffusion flange and method for thereof - Google Patents

Diffusion flange and method for thereof Download PDF

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KR100797887B1
KR100797887B1 KR1020070078974A KR20070078974A KR100797887B1 KR 100797887 B1 KR100797887 B1 KR 100797887B1 KR 1020070078974 A KR1020070078974 A KR 1020070078974A KR 20070078974 A KR20070078974 A KR 20070078974A KR 100797887 B1 KR100797887 B1 KR 100797887B1
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cooling
fastening portion
condensation
gas inlet
flange
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KR1020070078974A
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Korean (ko)
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이연억
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(주)유케이테크놀로지
이연억
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45572—Cooled nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)

Abstract

A 300 mm diffusion flange and a method for manufacturing the same are provided to properly cool the flange and prevent dew from being generated on the flange. In an ordinary diffusion flange including a body(110), an upper clamping part(111) and a lower clamping part(112), a vacuum port(113), and a gas injection port, a diffusion flange(100) additionally includes a first cooling line(130a) and a second cooling line(130b) for circulating cooling water one round by forming circular circulating pipes(131a,131b) within the upper and lower clamping parts, and a dew preventing unit(140) including a circular dew generating pipe(141) at inner side than the cooling lines in the upper or the lower clamping part, and a vapor exhaust port(142) installed on the dew generating pipe to exhaust vapor generated from the dew generating pipe through the vapor exhaust port. The gas injection port includes a plurality of first gas injection ports(120a) formed in one side of the body and a second gas injection port(120b) formed in the other side of the body, where the second gas injection port is larger than the first gas injection ports.

Description

디퓨젼 플랜지 및 이의 제조방법{Diffusion flange and method for thereof}Diffusion flange and method for manufacturing the same

본 발명은 플랜지 및 이의 제조방법에 관한 것으로, 더욱 상세하게는 반도체 소자 제조에 사용되는 확산로의 300mm 플랜지에 관한 것이다.The present invention relates to a flange and a method of manufacturing the same, and more particularly to a 300mm flange of the diffusion furnace used in the manufacture of semiconductor devices.

일반적으로 반도체 소자는 반도체 기판인 웨이퍼상에 사진, 식각, 확산, 이온주입, 금속증착 등의 공정을 선택적이고도 반복적으로 수행함으로써 만들어진다. 이러한 여러 공정중 빈번히 수행되는 공정의 하나로 웨이퍼상에 P형 또는 N형 불순물을 침투시키거나 산화막 또는 질화막 등의 특정막을 형성 또는 성장시키는 확산공정이 있다.In general, a semiconductor device is made by selectively and repeatedly performing a process such as photographing, etching, diffusion, ion implantation, and metal deposition on a semiconductor substrate wafer. One of the processes frequently performed among these processes is a diffusion process that infiltrates P-type or N-type impurities on a wafer or forms or grows a specific film such as an oxide film or a nitride film.

이러한 확산공정에서는 주로 화학기상증착(Chemical Vapor Deposition, CVD)법이 이용된다. 상기 CVD방법은 화학소스를 가스 상태로 장치내에 공급하여 웨이퍼 표면상에서 확산을 일으키게 함으로써 웨이퍼상에 유전체막, 도전막, 반도전막 등을 증착시키는 기술이다.In this diffusion process, chemical vapor deposition (CVD) is mainly used. The CVD method is a technique of depositing a dielectric film, a conductive film, a semiconducting film, etc. on a wafer by supplying a chemical source into the device in a gas state to cause diffusion on the wafer surface.

이러한 CVD방법은 통상 장치내의 압력에 따라 저압CVD, 상압CVD로 구분되고, 그 외에도 플라즈마CVD 또는 광여기CVD 등이 일반적으로 사용되고 있다. 이 중에서 LP(Low Pressure)CVD는 상압보다 낮은 압력에서 웨이퍼의 표면상에 필요한 물질을 증착시키는 방법으로서 주로 사용된다.Such a CVD method is generally classified into low pressure CVD and atmospheric pressure CVD according to the pressure in the apparatus. In addition, plasma CVD or photoexcited CVD is generally used. Among them, LP (Low Pressure) CVD is mainly used as a method of depositing a necessary material on the surface of the wafer at a pressure lower than normal pressure.

이러한 LPCVD방법을 이용한 확산공정은 주로 우수한 균일성과 반복성 및 낮은 결함률 등의 장점을 갖는 종형확산로(Vertical Diffusion Furnace)에서 그 진행이 이루어진다.The diffusion process using the LPCVD method mainly proceeds in a vertical diffusion furnace having excellent uniformity, repeatability, and low defect rate.

도 1은 종형확산로의 구조를 개략적으로 나타낸 도면으로, 도 1에서 보는 바와 같이 종형확산로(1)는 크게 내측튜브(2), 외측튜브(3), 히터블럭(4), 플랜지(10), 보트(5) 및 엘리베이터캡(6) 등으로 구성된다.FIG. 1 is a view schematically illustrating a structure of a vertical diffusion furnace. As shown in FIG. 1, a vertical diffusion path 1 includes an inner tube 2, an outer tube 3, a heater block 4, and a flange 10. ), The boat 5 and the elevator cap 6 and the like.

여기에서 내측튜브(2)는 석영재질로 형성된 원통형 관으로, 그 내부에는 다수매의 웨이퍼(W)를 적재한 보트(5)가 삽입되어 상기 웨이퍼(W)상에 화학기상증착이 진행되는 공간을 형성한다.Here, the inner tube 2 is a cylindrical tube formed of quartz material, and a space in which a boat 5 having a plurality of wafers W loaded therein is inserted and chemical vapor deposition proceeds on the wafer W. To form.

그리고 외측튜브(3)는 종형상을 가지며 내측튜브(2)의 외측에 소정간격을 두고 설치되어 그 내부를 밀폐시키는 역할을 수행한다.And the outer tube (3) has a longitudinal shape and is installed with a predetermined interval on the outside of the inner tube (2) serves to seal the inside.

한편, 외측튜브(3)의 외측에는 외측튜브(3)를 둘러싸도록 설치되어 외측튜브(3)의 내부온도를 공정에 필요한 적정온도로 가열하기 위한 히터블럭(4)이 마련된다.On the other hand, the outer side of the outer tube (3) is provided to surround the outer tube (3) is provided with a heater block (4) for heating the inner temperature of the outer tube (3) to the appropriate temperature required for the process.

그리고 플랜지(10)에는 내측튜브(2)와 외측튜브(3)가 세팅된다. 이러한 플랜지(10)의 하단에는 보트(5)를 승하강시키면서 외측튜브(3) 및 플랜지(10)의 내부를 밀폐시키는 엘리베이터캡(6)이 결합된다.And the inner tube 2 and the outer tube 3 is set to the flange (10). The lower end of the flange 10 is coupled to the elevator cap 6 for sealing the inside of the outer tube 3 and the flange 10 while lifting the boat (5).

여기에서 플랜지(10)는 내부를 수직방향으로 관통하는 중공(11a)이 형성된 원통형 몸체(11)를 가지며, 몸체(11)의 상부에는 수평방향으로 돌출형성되어 내측 튜브(2) 및 외측튜브(3)가 세팅되는 상부체결부(12)가 일체로 형성되고, 몸체(11)의 하부에는 수평방향으로 돌출형성되어 엘리베이터캡(6)이 세팅되는 하부체결부(13)가 일체로 형성된다.Here, the flange 10 has a cylindrical body 11 formed with a hollow 11a penetrating the inside in a vertical direction, and protrudes in the horizontal direction on the upper portion of the body 11 so that the inner tube 2 and the outer tube ( The upper fastening portion 12 to which 3) is set is integrally formed, and the lower fastening portion 13 to which the elevator cap 6 is set is integrally formed under the body 11 by protruding in the horizontal direction.

그리고 몸체(11)의 어느 일측에는 몸체(11)의 중공(11a)과 연통되는 진공포트(14)가 형성된다. 또한, 몸체(11)의 어느 일측에는 확산용 가스를 주입시키기 위한 가스포트(15)가 중공(11a)과 연통되도록 형성된다.And one side of the body 11 is formed with a vacuum port 14 in communication with the hollow 11a of the body (11). In addition, the gas port 15 for injecting the diffusion gas is formed on any one side of the body 11 to communicate with the hollow (11a).

이와 같이 형성된 종형확산로(1)는 진공펌프(도시되지 않음)가 진공포트(14)와 연결되어 플랜지(10) 및 내측튜브(2)내를 진공화시킨후, 가스포트(15)를 통해 확산용 가스를 주입시켜 보트(5)에 적층된 웨이퍼(W)상에 확산시키게 된다.In the vertical diffusion path 1 formed as described above, a vacuum pump (not shown) is connected to the vacuum port 14 to vacuum the flange 10 and the inner tube 2, and then through the gas port 15. The diffusion gas is injected to diffuse onto the wafer W stacked on the boat 5.

위와 같은 종형확산로는 통상적으로 사용되는 형태이며, 최근에 개발된 디퓨젼 플랜지는 웨이퍼상에 무리한 고온이 전달되는 것을 방지하기 위해 냉각장치가 마련된 기술이 개발되기도 하였다.The vertical type diffusion furnace as described above is a commonly used type, and a recently developed diffusion flange has been developed with a technology in which a cooling device is provided to prevent excessive high temperature from being transferred on a wafer.

냉각장치가 마련된 디퓨젼 플랜지로서는 대한민국 공개특허 제2006-0117588호(냉각시스템을 갖는 직접회로 제조용 확산로 및 확산로의 냉각방법)가 개시되었다.As a diffusion flange provided with a cooling device, Korean Patent Application Publication No. 2006-0117588 (Diffusion path and method for cooling the diffusion circuit for manufacturing an integrated circuit having a cooling system) has been disclosed.

상기 공개특허에서의 냉각방법은 도 2에서 보는 바와 같이 플랜지(10)내에 냉각관(65)을 형성하여 냉각제가 흐르는 통로의 역할을 할 수 있도록 마련되었다. 이때, 냉각관(65)에는 공급배관(67) 및 배출배관(61)이 연결될 수 있게 하였다. 그리고 공급배관(67) 및 배출배관(61)중 어느 하나에 유량조절밸브들(63, 69)을 부착하여 제어장치(83)의 신호에 따라 냉각관(65)에 흐르는 냉각제의 유량을 조절할 수 있도록 하였다.As shown in FIG. 2, the cooling method of the disclosed patent is provided to form a cooling tube 65 in the flange 10 to serve as a passage through which a coolant flows. At this time, the supply pipe (67) and the discharge pipe (61) to be connected to the cooling pipe (65). The flow rate control valves 63 and 69 may be attached to any one of the supply pipe 67 and the discharge pipe 61 to adjust the flow rate of the coolant flowing in the cooling pipe 65 according to the signal of the control device 83. It was made.

한편, 전술한 바와 같은 확산로에 사용되는 플랜지들은 250mm까지는 대부분 국내에서 제작되어 사용되고 있지만, 300mm 플랜지는 전량 수입에 의존하고 있는 실정이다.Meanwhile, the flanges used in the diffusion furnace as described above are mostly manufactured and used up to 250mm in Korea, but the 300mm flanges depend on the total imports.

최근에는 하이닉스반도체 및 삼성전자 등과 같은 반도체 회사들이 앞다투어 300mm라인을 증설하고 있는 실정인데 반해, 300mm라인에 적용되는 디퓨젼 플랜지의 제조기술이 없는 실정이다.Recently, semiconductor companies such as Hynix Semiconductor and Samsung Electronics have been expanding the 300mm line, but there is no manufacturing technology of diffusion flanges applied to the 300mm line.

이러한 300mm 디퓨젼 플랜지의 제조방법은 고온, 고압 및 고진공에 견딜 수 있는 내구성이 필요하도록 용접기술이 필요하게 되며, 온도를 조절할 수 있는 냉각기술 등이 함께 수반되어야 할 것이다.The manufacturing method of such a 300mm diffusion flange requires a welding technique to require durability against high temperature, high pressure, and high vacuum, and should be accompanied by a cooling technique for controlling temperature.

본 발명은 상기와 같은 필요성에 부응하기 위해 안출된 것으로, 300mm 디퓨젼 플랜지 및 이의 제조방법을 제공하는 것이며, 이 플랜지에 냉각기술 및 결로를 방지할 수 있는 기술을 제공하는데 있다.The present invention has been made to meet the above needs, to provide a 300mm diffusion flange and its manufacturing method, to provide a cooling technology and a technology that can prevent condensation on the flange.

상기와 같은 과제를 해결하기 위해 본 발명은,The present invention to solve the above problems,

몸체와, 상부체결부 및 하부체결부와, 진공포트와, 가스주입구를 포함하는 통상의 디퓨젼 플랜지에 있어서,In a conventional diffusion flange comprising a body, an upper fastening portion and a lower fastening portion, a vacuum port, and a gas inlet,

상부체결부 및 하부체결부의 내부에는 원형의 순회관을 형성하여 냉각수를 한바퀴 순회시키는 제1냉각라인 및 제2냉각라인과, 상부체결부 또는 하부체결부의 내부에는 냉각라인들의 내측방향으로 원형의 결로발생관을 형성하여 수증기를 배출시키는 결로방지수단을 더 포함하는 것을 특징으로 하는 디퓨젼 플랜지를 제공한다.Inside the upper fastening portion and the lower fastening portion, a circular circuit is formed in the first cooling line and the second cooling line to circulate the cooling water by one round, and inside the upper fastening portion or the lower fastening portion, the condensation is circular in the inner direction of the cooling lines. It provides a diffusion flange, characterized in that it further comprises a condensation preventing means for forming a generating tube to discharge water vapor.

이때, 가스주입구는 소구경으로 다수개가 구성된 제1가스주입구가 몸체의 어느 일측에 형성되며, 대구경으로 된 제2가스주입구가 제1가스주입구의 맞은편에 형성되도록 하여 주입되는 가스의 믹싱을 원활하게 해줄 수 있다.At this time, the gas inlet is formed in any one side of the body of the first gas inlet composed of a plurality of small diameter, the second gas inlet of large diameter is formed on the opposite side of the first gas inlet to smooth mixing of the injected gas I can let you.

또는, 본 발명은,Or, the present invention,

중공이 형성된 몸체의 상, 하부에 상부체결부 및 하부체결부를 형성시키고, 몸체에 중공과 연통되도록 진공포트 및 가스주입구를 형성시키는 디퓨젼 플랜지의 제조방법에 있어서,In the manufacturing method of the diffusion flange to form the upper fastening portion and the lower fastening portion on the upper and lower parts of the hollow body, the vacuum port and the gas inlet to communicate with the hollow in the body,

상부체결부 및 하부체결부의 외측면상에는 한바퀴가 조금 못미치도록 원형의 냉각홈부를 형성하는 단계;Forming a circular cooling groove on an outer surface of the upper fastening portion and the lower fastening portion so as to be slightly less than one round;

냉각홈부를 원형테의 냉각커버로 닫은 후, 용접결합시키는 단계;Closing the cooling groove with a cooling cover of a circular frame, and then welding the cooling groove;

냉각홈부를 따라 냉각수가 한바퀴 순회하도록 냉각홈부의 양끝단에 냉각커버를 관통하도록 냉각공급포트 및 냉각배출포트를 용접결합시켜 냉각장치를 형성시키는 단계;Forming a cooling device by welding a cooling supply port and a cooling discharge port to each side of the cooling groove through the cooling cover so that the cooling water circulates along the cooling groove;

상부체결부 또는 하부체결부의 외측면상에 냉각장치의 내측방향으로 원형의 결로홈부를 형성시키는 단계;Forming circular condensation grooves in the inward direction of the cooling device on the outer surface of the upper and lower fastening portions;

결로홈부를 원형테의 결로커버로 닫은 후, 용접결합시키는 단계; 및Closing the condensation groove with a condensation cover of a circular frame and then welding the condensation groove; And

결로홈부의 어느 한곳에 결로커버를 관통하도록 수증기배출포트를 용접결합시켜 결로방지수단을 형성시키는 단계;를 포함하는 것을 특징으로 하는 디퓨젼 플랜지의 제조방법을 제공한다.It provides a manufacturing method of a diffusion flange comprising a; forming a condensation preventing means by welding the vapor discharge port to penetrate the condensation cover to any one of the condensation groove portion.

본 발명에 따른 디퓨젼 플랜지는 전량 수입에만 의존했던 300mm 플랜지에 적용되도록 설계되어 내수시장 및 수출산업에 크게 이바지 할 수 있을 것으로 예상된다.The diffusion flange according to the present invention is designed to be applied to the 300mm flange, which depended solely on imports, and is expected to greatly contribute to the domestic market and the export industry.

이와 같은 본 발명의 디퓨젼 플랜지는 특히나, 결로방지수단을 더 포함하고 있어 정밀한 반도체 소자 제조에 사용되는 종형확산로에서 유용하게 사용될 수 있는 잇점이 있다.Such a diffusion flange of the present invention, in particular, further includes a condensation preventing means, which has the advantage that it can be usefully used in a vertical diffusion furnace used for manufacturing a precise semiconductor device.

이하, 첨부된 도면을 참조하여 본 발명의 바람직한 실시예에 따른 디퓨젼 플랜지 및 이의 제조방법에 대해 설명한다.Hereinafter, a diffusion flange and a manufacturing method thereof according to a preferred embodiment of the present invention will be described with reference to the accompanying drawings.

도 3은 본 발명에 따른 디퓨젼 플랜지를 나타낸 사시도이고, 도 4는 도 3의 A부분을 상세하게 나타낸 것으로 냉각장치의 구조를 보인 사시도이며, 그리고 도 5는 도 3의 B부분을 상세하게 나타낸 것으로 결로방지수단의 구조를 보인 사시도이다.Figure 3 is a perspective view showing a diffusion flange according to the present invention, Figure 4 is a perspective view showing the structure of the cooling device to detail the portion A of Figure 3, and Figure 5 shows a detail B portion of Figure 3 It is a perspective view showing the structure of the condensation preventing means.

도 3을 참고하면, 본 발명에 따른 디퓨젼 플랜지(100)는 수직하게 중공된 원통형의 몸체(110) 상, 하부에 상부체결부(111) 및 하부체결부(112)가 수평하게 돌출되어 일체로 형성된다.Referring to FIG. 3, the diffusion flange 100 according to the present invention is integrally formed by vertically protruding the upper fastening portion 111 and the lower fastening portion 112 on the lower portion of the cylindrical body 110 vertically hollow. Is formed.

여기에서 몸체(110), 상부체결부(111) 및 하부체결부(112)는 선반 및 밀링을 이용하여 가공한 후, 용접으로 결합된다.Here, the body 110, the upper fastening portion 111 and the lower fastening portion 112 are processed by lathes and milling, and then joined by welding.

또는, 몸체(110), 상부체결부(111) 및 하부체결부(112)는 금형에 의해 일체로 제작될 수도 있다.Alternatively, the body 110, the upper fastening part 111, and the lower fastening part 112 may be integrally manufactured by a mold.

이와 같이 형성된 상부체결부(111) 및 하부체결부(112)에는 확산로의 내측튜브, 외측튜브나 엘리베이터캡에 체결되기 위해 돌출부나 홈부 등의 체결수단들이 형성된다. 이러한 체결수단들은 종래기술들에 의해서도 공지된 기술인바 자세한 설명은 생략하기로 한다.In the upper fastening portion 111 and the lower fastening portion 112 formed as described above, fastening means such as protrusions or grooves are formed to be fastened to the inner tube, the outer tube or the elevator cap of the diffusion path. These fastening means are well known by the prior art, so a detailed description thereof will be omitted.

이렇게 형성된 디퓨젼 플랜지(100)의 몸체(110)에는 어느 일측에 진공펌프(도시되지 않음)와 연결되는 진공포트(113)가 중공과 연통되도록 형성된다.The body 110 of the diffusion flange 100 formed as described above is formed such that a vacuum port 113 connected to a vacuum pump (not shown) is connected to the hollow on either side.

그리고 몸체(110)의 어느 일측 및 타측에는 가스주입구가 형성된다. 가스주입구는 제1주입구(120a)와 제2주입구(120b)가 서로 마주보게 형성된다. 제1주입구(120a)는 소량의 가스들이 주입되도록 소구경의 작은 통로들이 다수개로 형성되고, 제2주입구(120b)는 대량의 가스가 주입되도록 대구경의 큰 통로가 형성된다.And one side and the other side of the body 110 is formed with a gas inlet. The gas inlet is formed such that the first inlet 120a and the second inlet 120b face each other. The first inlet 120a is formed with a plurality of small passages so that a small amount of gas is injected, the second inlet 120b is formed with a large passage of a large diameter so that a large amount of gas is injected.

즉, 웨이퍼상에 산화막을 입히기 위한 가스들이 플랜지(100)의 가스주입구를 통해 유입되는데, 이러한 가스들은 플랜지(100)내로 들어와 서로 혼합되게 된다. 이때, 혼합량에 따라 적은양의 가스들은 제1주입구(120a)로 유입되고, 많은 양의 가스는 제2주입구(120b)로 유입되어 혼합되게 된다.That is, gases for coating an oxide film on the wafer are introduced through the gas inlet of the flange 100, and these gases enter the flange 100 and are mixed with each other. At this time, a small amount of gas is introduced into the first inlet 120a according to the mixing amount, and a large amount of gas is introduced into the second inlet 120b to be mixed.

또한, 제1주입구(120a)와 제2주입구(120b)를 서로 마주보게 형성시키는 이유는 서로 다른 가스들이 믹싱될때에 주입과 동시에 플랜지의 중심에서 서로 부딪히면서 믹싱이 잘되게 함에 있다.In addition, the reason for forming the first inlet 120a and the second inlet 120b to face each other is that the mixing is performed well when the different gases are mixed with each other while hitting each other at the center of the flange.

한편, 플랜지(100)에는 냉각장치가 마련된다. 냉각장치는 상부체결부(111)의 내부에 순회관(131a)을 형성하여 냉각수를 한바퀴 순회시키도록 형성되는 제1냉각라인(130a)과, 마찬가지로 하부체결부(112)의 내부에 순회관(131b)을 형성하여 냉각수를 한바퀴 순회시키도록 형성되는 제2냉각라인(130b)으로 구성된다. 이러한 냉각장치는 도 4에서 보는 바와 같이 상부체결부(111) 및 하부체결부(112)의 외측면상에 원형의 냉각홈부(135a)(135b)를 형성한 후, 이 냉각홈부(135a)(135b를 냉각커버(136a)(136b)로 막아 용접결합으로 형성된다. 이때, 각각의 냉각홈부(135a)(135b)들은 완전한 원형으로 형성되는 것이 아니라 한쪽으로 입구를 형성하고 거의 한바퀴 순회하여 입구 바로 옆에 출구를 형성하도록 마련된다. 이렇게 형성된 각각의 냉각홈부(135a)(135b)에는 입구에 냉각공급포트(132a)가 냉각커버(136a)(136b)를 관통하도록 용접결합되어 형성되고, 출구에 냉각배출포트(132b)가 냉각커버(136a)(136b)를 관통하도록 용접결합되어 형성된다.On the other hand, the flange 100 is provided with a cooling device. The cooling device forms a circulation tube 131a in the upper fastening portion 111 to form the first cooling line 130a so as to circulate the cooling water one round, and similarly, the circulation tube is formed inside the lower fastening portion 112. 131b) to form a second cooling line 130b formed to circulate the cooling water. Such a cooling device forms circular cooling grooves 135a and 135b on the outer surfaces of the upper fastening portion 111 and the lower fastening portion 112 as shown in FIG. 4, and then the cooling grooves 135a and 135b. Is formed by welding by blocking the cooling cover 136a and 136b, in which the cooling grooves 135a and 135b are not formed in a completely circular shape, but form an inlet to one side and circulate almost one round, right next to the inlet. Each of the cooling grooves 135a and 135b formed as described above is formed by welding a cooling supply port 132a to the inlet to penetrate the cooling cover 136a and 136b and cooling the outlet. The discharge port 132b is welded and formed to pass through the cooling covers 136a and 136b.

본 발명에 따른 디퓨젼 플랜지(100)에는 결로방지수단(140)이 더 마련된다. 결로방지수단(140)은 고온으로 발열되는 디퓨젼 플랜지(100)에 냉각장치에 의한 냉각이 이루어질때에 온도차이로 인한 결로현상이 발생될 수 있는 것을 방지하기 위한 수단이다.The diffusion flange 100 according to the present invention is further provided with condensation preventing means 140. The condensation preventing means 140 is a means for preventing condensation due to a temperature difference when cooling by the cooling device is performed on the diffusion flange 100 that is heated to a high temperature.

이러한 결로방지수단(140)은 하부체결부(112)의 제2냉각라인(130b)의 내측에 결로발생관(141)을 뚫어 형성된다. 즉, 결로방지수단(140)은 도 5에서 보는 바와 같이 하부체결부(112)의 외측면상에 결로홈부(145)가 제2냉각라인(130b)보다 작은 원형으로 형성되고, 이 결로홈부(145)를 결로커버(146)로 용접결합되도록 형성된다. 그리고 결로커버(146)에는 하나의 수증기배출포트(142)를 형성하여 결로홈부(145)와 연통되도록 마련된다.The condensation preventing means 140 is formed by drilling a condensation generating tube 141 inside the second cooling line 130b of the lower fastening portion 112. That is, the condensation preventing means 140 is a condensation groove 145 is formed on the outer surface of the lower fastening portion 112 is smaller than the second cooling line 130b as shown in Figure 5, the condensation groove portion 145 ) Is formed to be welded to the condensation cover 146. The condensation cover 146 is provided to communicate with the condensation groove 145 by forming one steam discharge port 142.

이와 같이 형성된 결로방지수단(140)은 디퓨젼 플랜지(100)가 가열되고, 냉각장치에 의해서 냉각될때에 발생되는 결로현상을 결로방지수단(140)의 결로홈부(145)에서 물로 응축시키고, 이 응축된 물은 디퓨젼 플랜지(100)가 고온이므로 수증기로 기화되면서 수증기배출포트(142)로 배출되게 된다.The condensation preventing means 140 formed as described above condenses the condensation phenomenon generated when the diffusion flange 100 is heated and cooled by the cooling device to water in the condensation groove part 145 of the condensation preventing means 140. The condensed water is discharged to the steam discharge port 142 while being vaporized with water vapor because the diffusion flange 100 is a high temperature.

도면에서는 도시하지 않았지만, 결로방지수단(140)은 하부체결부(112)에만 형성되는 것이 아니라 하부체결부(112)에서와 마찬가지로 상부체결부(111)에도 형성시킬 수 있다. 또는, 결로방지수단(140)은 상부체결부(111)에만 형성시킬 수도 있다.Although not shown in the drawing, the condensation preventing means 140 may be formed in the upper fastening part 111 as in the lower fastening part 112, instead of being formed only in the lower fastening part 112. Alternatively, the condensation preventing means 140 may be formed only on the upper fastening portion 111.

상기에서는 본 발명의 바람직한 실시예를 참조하여 설명하였지만, 해당기술분야의 숙련된 당업자는 특허청구범위에 기재된 본 발명의 사상 및 영역으로부터 벗어나지 않는 범위내에서 본 발명을 다양하게 수정 및 변경시킬 수 있음을 이해할 수 있을 것이다.Although described above with reference to a preferred embodiment of the present invention, those skilled in the art can be variously modified and changed within the scope of the invention without departing from the spirit and scope of the invention described in the claims You will understand.

도 1은 일반적인 종형확산로를 개략적으로 나타낸 도면이고,1 is a view schematically showing a typical bell spreader,

도 2는 종형확산로의 플랜지에 냉각장치가 마련된 형태의 종래기술을 나타낸 도면이고,2 is a view showing the prior art of the cooling device is provided on the flange of the vertical diffusion,

도 3은 본 발명에 따른 디퓨젼 플랜지를 나타낸 일부 절개 사시도이고,3 is a partially cutaway perspective view showing a diffusion flange according to the present invention;

도 4는 도 3의 A부분 상세도로서 냉각장치의 구조를 보인 사시도이며,4 is a perspective view showing the structure of the cooling device as a detailed view of the portion A of FIG.

도 5는 도 3의 B부분 상세도로서 결로방지수단의 구조를 보인 사시도이다.5 is a perspective view showing the structure of the condensation preventing means as a detailed view of the portion B of FIG.

Claims (3)

몸체와, 상부체결부 및 하부체결부와, 진공포트와, 가스주입구를 포함하는 통상의 디퓨젼 플랜지에 있어서,In a conventional diffusion flange comprising a body, an upper fastening portion and a lower fastening portion, a vacuum port, and a gas inlet, 상기 상부체결부 및 하부체결부의 내부에는 원형의 순회관을 형성하여 냉각수를 한바퀴 순회시키는 제1냉각라인 및 제2냉각라인과;A first cooling line and a second cooling line circulating the cooling water by forming a circular circulation tube in the upper fastening portion and the lower fastening portion; 상기 상부체결부 또는 하부체결부의 내부에는 상기 냉각라인들의 안쪽방향으로 원형의 결로발생관을 형성하고, 이 결로발생관에 수증기배출포트를 설치하여 상기 결로발생관에서 발생된 수증기를 수증기배출포트를 통해 배출시키는 결로방지수단;을 더 포함하는 것을 특징으로 하는 디퓨젼 플랜지.Inside the upper fastening part or the lower fastening part, a circular condensation generating tube is formed in the inward direction of the cooling lines, and a water vapor discharge port is installed in the condensation generating tube to provide a steam discharge port. Diffusion flange further comprises; condensation preventing means for discharging through. 제 1 항에 있어서, 상기 가스주입구는 가스의 혼합량에 따라 적은양의 가스들이 유입되는 다수개로 구성된 제1가스주입구가 상기 몸체의 어느 일측에 형성되며, 가스의 혼합량에 따라 많은 양의 가스가 유입되도록 상기 제1가스주입구보다 더 크게 형성되는 제2가스주입구가 상기 제1가스주입구의 맞은편에 형성됨을 특징으로 하는 디퓨젼 플랜지.According to claim 1, wherein the gas inlet is formed in any one side of the body of the first gas inlet composed of a plurality of gas inlet flows in accordance with the amount of gas is mixed, a large amount of gas inlet And a second gas inlet formed larger than the first gas inlet so as to be opposite to the first gas inlet. 중공이 형성된 몸체의 상, 하부에 상부체결부 및 하부체결부를 형성시키고, 상기 몸체에 중공과 연통되도록 진공포트 및 가스주입구를 형성시키는 디퓨젼 플랜지의 제조방법에 있어서,In the manufacturing method of the diffusion flange to form the upper fastening portion and the lower fastening portion on the upper and lower parts of the hollow body, and to form a vacuum port and a gas inlet to communicate with the hollow in the body, 상기 상부체결부 및 하부체결부의 외측면상에는 일부가 단락되도록 한바퀴에 못미치는 원형의 냉각홈부를 형성하는 단계;Forming circular cooling grooves on the outer surfaces of the upper fastening portion and the lower fastening portion, the circular cooling grooves being less than one round so that a portion thereof is short-circuited; 상기 냉각홈부를 원형테의 냉각커버로 닫은 후, 용접결합시키는 단계;Closing the cooling groove with a cooling cover of a circular frame and then welding them; 상기 냉각홈부를 따라 냉각수가 한바퀴 순회하도록 상기 냉각홈부의 양끝단에 상기 냉각커버를 관통하도록 냉각공급포트 및 냉각배출포트를 용접결합시켜 냉각장치를 형성시키는 단계;Forming a cooling device by welding a cooling supply port and a cooling discharge port to both ends of the cooling groove to penetrate the cooling cover so that the cooling water circulates along the cooling groove; 상기 상부체결부 또는 하부체결부의 외측면상에 상기 냉각장치의 내측방향으로 원형의 결로홈부를 형성시키는 단계;Forming a circular condensation groove in an inward direction of the cooling device on the outer surface of the upper fastening portion or the lower fastening portion; 상기 결로홈부를 원형테의 결로커버로 닫은 후, 용접결합시키는 단계; 및Closing the condensation groove with a condensation cover of a circular frame and then welding the condensation groove; And 상기 결로홈부의 어느 한곳에 상기 결로커버를 관통하도록 수증기배출포트를 용접결합시켜 결로방지수단을 형성시키는 단계;를 포함하는 것을 특징으로 하는 디퓨젼 플랜지의 제조방법.And forming a condensation preventing means by welding a water vapor discharge port to one of the condensation groove portions so as to pass through the condensation cover.
KR1020070078974A 2007-08-07 2007-08-07 Diffusion flange and method for thereof KR100797887B1 (en)

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010046221A (en) * 1999-11-11 2001-06-05 윤종용 Device for cooling flange of horizontal type furnace for Low Pressure Chemical Vaper Deposition
KR20060012803A (en) * 2004-08-04 2006-02-09 삼성전자주식회사 Apparatus for manufacturing semiconductor
KR20060117588A (en) * 2005-05-11 2006-11-17 삼성전자주식회사 Diffusion furnace for manufacturing integrated circuits having cooling system and method for cooling the diffusion furnace

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010046221A (en) * 1999-11-11 2001-06-05 윤종용 Device for cooling flange of horizontal type furnace for Low Pressure Chemical Vaper Deposition
KR20060012803A (en) * 2004-08-04 2006-02-09 삼성전자주식회사 Apparatus for manufacturing semiconductor
KR20060117588A (en) * 2005-05-11 2006-11-17 삼성전자주식회사 Diffusion furnace for manufacturing integrated circuits having cooling system and method for cooling the diffusion furnace

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