KR20010083628A - Belt type cvd apparatus for semiconductor wafer - Google Patents

Belt type cvd apparatus for semiconductor wafer Download PDF

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Publication number
KR20010083628A
KR20010083628A KR1020000007608A KR20000007608A KR20010083628A KR 20010083628 A KR20010083628 A KR 20010083628A KR 1020000007608 A KR1020000007608 A KR 1020000007608A KR 20000007608 A KR20000007608 A KR 20000007608A KR 20010083628 A KR20010083628 A KR 20010083628A
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South Korea
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belt
wafer
gas
vapor deposition
semiconductor wafer
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KR1020000007608A
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Korean (ko)
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권재진
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박종섭
주식회사 하이닉스반도체
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Priority to KR1020000007608A priority Critical patent/KR20010083628A/en
Publication of KR20010083628A publication Critical patent/KR20010083628A/en

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

PURPOSE: A belt-type chemical vapor deposition apparatus for manufacturing a semiconductor wafer is provided to improve thickness uniformity of a deposition layer deposited on a wafer, by uniformly supplying the quantity of process gas supplied to the wafer. CONSTITUTION: A plurality of gas spraying units are installed inside a process chamber. A plurality of trays wherein wafer are mounted are installed in a lower portion of the gas spraying unit. The trays are installed to move in a lower portion of the chamber by using a belt. A speed detection unit(20) detects a transfer speed of the belt. A controller(21) controls the quantity of gas sprayed from the gas spraying unit according to the transfer speed of the belt.

Description

반도체 웨이퍼 제조용 벨트식 화학기상증착장치{BELT TYPE CVD APPARATUS FOR SEMICONDUCTOR WAFER}Belt type chemical vapor deposition apparatus for semiconductor wafer manufacturing {BELT TYPE CVD APPARATUS FOR SEMICONDUCTOR WAFER}

본 발명은 반도체 웨이퍼 제조용 벨트식 화학기상증착장치에 관한 것으로, 특히 웨이퍼의 이송속도에 따라 공정가스의 분사량을 조절하여 증착막의 두께 균일도를 향상시키도록 하는데 적합한 반도체 웨이퍼 제조용 벨트식 화학기상증착장치에 관한 것이다.The present invention relates to a belt type chemical vapor deposition apparatus for manufacturing a semiconductor wafer, and more particularly, to a belt type chemical vapor deposition apparatus for manufacturing a semiconductor wafer suitable for improving the thickness uniformity of a deposited film by adjusting the injection amount of a process gas according to a wafer transfer speed. It is about.

반도체 웨이퍼의 상면에 일정두께의 증착막을 증착하기 위한 벨트식 화학기상증착장치가 도 1에 도시되어 있는 바, 이를 간단히 설명하면 다음과 같다.A belt type chemical vapor deposition apparatus for depositing a predetermined thickness of a deposited film on the upper surface of a semiconductor wafer is illustrated in FIG. 1, which will be briefly described as follows.

도시된 바와 같이, 종래 벨트식 화학기상증착장치는 공정 챔버(1)의 내측에 공정가스(2)를 분사하기 위한 수개의 가스분사기(3)가 설치되어 있고, 그 가스분사기(3)의 하측에는 웨이퍼(4)가 트레이(5)의 상측에 탑재되어 있으며, 그 트레이(5)는 벨트(6)에 의하여 일정속도로 이동하도록 되어 있다.As shown, the conventional belt type chemical vapor deposition apparatus is provided with several gas injectors 3 for injecting the process gas 2 inside the process chamber 1 and the lower side of the gas injector 3. The wafer 4 is mounted on the upper side of the tray 5, and the tray 5 is moved at a constant speed by the belt 6.

상기와 같이 구성되어 있는 종래 벨트식 화학기상증착장치는 트레이(5)의 상면에 웨이퍼(4)를 탑재한 상태에서 벨트(6)가 구동수단에 의하여 화살표 방향으로 이동하면 벨트(6)에 고정된 트레이(5)도 이동하게 되어 트레이(5)에 탑재된 웨이퍼(4)를 챔버(1)의 내측에서 일정속도로 이동시키게 된다.The conventional belt type chemical vapor deposition apparatus configured as described above is fixed to the belt 6 when the belt 6 moves in the direction of the arrow by the driving means while the wafer 4 is mounted on the upper surface of the tray 5. The tray 5 thus moved also moves the wafer 4 mounted on the tray 5 at a constant speed inside the chamber 1.

상기와 같은 상태에서 웨이퍼(4)들이 일정속도로 이동하는 상태에서 가스분사기(3)에서 공정가스(2)를 분사하면 웨이퍼(4)의 상면에 일정두께의 증착막이 증착되게 된다.When the process gas 2 is injected from the gas injector 3 while the wafers 4 move at a constant speed in the above state, a deposition film having a predetermined thickness is deposited on the upper surface of the wafer 4.

그러나, 상기와 같은 벨트식 화학기상증착장치에서는 구동수단의 이상발생으로 벨트(6)가 규정속도 보다 빠르거나 느리게 이동하여 결과적으로 웨이퍼(4)의 상면에 공급되는 공정가스(2)의 공급불균일에 의하여 증착두께의 불균일을 초래하는 문제점이 있었다.However, in the belt type chemical vapor deposition apparatus as described above, the belt 6 moves faster or slower than the prescribed speed due to an abnormality in the driving means, resulting in uneven supply of the process gas 2 supplied to the upper surface of the wafer 4. There is a problem that causes a non-uniformity of the deposition thickness.

상기와 같은 문제점을 감안하여 안출한 본 발명의 목적은 웨이퍼의 이송속도에 따라 웨이퍼의 상면으로 공급되는 공정가스의 양을 조절하여 증착두께의 균일도를 향상시키도록 하는데 적합한 반도체 웨이퍼 제조용 벨트식 화학기상증착장치를 제공함에 있다.The object of the present invention devised in view of the above problems is to adjust the amount of process gas supplied to the upper surface of the wafer according to the transfer speed of the wafer to improve the uniformity of the deposition thickness belt-type chemical vapor phase for semiconductor wafer manufacturing In providing a vapor deposition apparatus.

도 1은 종래 벨트식 화학기상증착장치의 구성을 보인 종단면도.1 is a longitudinal sectional view showing a configuration of a conventional belt type chemical vapor deposition apparatus.

도 2는 본 발명 반도체 웨이퍼 제조용 벨트식 화학기상증착장치의 구성을 보인 종단면도.Figure 2 is a longitudinal cross-sectional view showing the configuration of the belt type chemical vapor deposition apparatus for producing a semiconductor wafer of the present invention.

* 도면의 주요 부분에 대한 부호의 설명 *Explanation of symbols on the main parts of the drawings

11 : 공정 챔버 12 : 공정가스11 process chamber 12 process gas

13 : 가스분사기 14 : 웨이퍼13 gas injector 14 wafer

15 : 트레이 16 : 벨트15 tray 16: belt

20 : 속도검출기 21 : 콘트롤러20: speed detector 21: controller

상기와 같은 본 발명의 목적을 달성하기 위하여 공정 챔버의 내측에 수개의 가스분사기가 구비되어 있고, 그 가스분사기의 하측으로 웨이퍼를 각각 탑재한 트레이들이 구비되어 있으며, 그 트레이들은 벨트에 의하여 챔버의 하측에서 이동하도록 되어 있는 벨트식 화학기상증착장치에 있어서, 상기 벨트를 이송속도를 검출하기 위한 속도검출기와, 그 이송속도에 따라 가스분사기의 가스분사량을 콘트롤하기 위한 콘트롤러를 구비하여서 구성되는 것을 특징으로 하는 반도체 웨이퍼 제조용 벨트식 화학기상증착장치가 제공된다.In order to achieve the object of the present invention as described above, a plurality of gas injectors are provided inside the process chamber, and trays each having a wafer mounted under the gas injector are provided, and the trays are provided by a belt. A belt type chemical vapor deposition apparatus adapted to move from a lower side, comprising: a speed detector for detecting a conveying speed of the belt, and a controller for controlling a gas ejection amount of the gas injector according to the conveying speed; A belt type chemical vapor deposition apparatus for semiconductor wafer production is provided.

이하, 상기와 같이 구성되는 본 발명 반도체 웨이퍼 제조용 벨트식 화학기상증착장치의 실시예를 첨부된 도면의 실시예를 참고하여 보다 상세히 설명하면 다음과 같다.Hereinafter, with reference to the embodiment of the accompanying drawings, an embodiment of the belt type chemical vapor deposition apparatus for producing a semiconductor wafer of the present invention configured as described above will be described in more detail.

도 2는 본 발명 반도체 웨이퍼 제조용 벨트식 화학기상증착장치의 구성을 보인 종단면도로서, 도시된 바와 같이, 본 발명 벨트식 화학기상증착장치는 공정 챔버(11)의 내측에 공정가스(12)를 분사하기 위한 3개의 가스분사기(13)가 일정간격을 두고 설치되어 있고, 그 가스분사기(13)들의 하측에는 웨이퍼(14)가 탑재되는 트레이(15)들이 일정간격을 두고 설치되어 있으며, 그 트레이(15)들은 일정속도로 이동가능하게 설치된 벨트(16)의 상면에 고정되어 있다.2 is a longitudinal sectional view showing the configuration of the belt type chemical vapor deposition apparatus for manufacturing a semiconductor wafer of the present invention. As shown in the drawing, the belt type chemical vapor deposition apparatus of the present invention uses a process gas 12 inside the process chamber 11. Three gas injectors 13 for ejecting are provided at regular intervals, and under the gas injectors 13, trays 15 on which the wafers 14 are mounted are provided at regular intervals. 15 are fixed to the upper surface of the belt 16 which is installed to be movable at a constant speed.

그리고, 상기 공정 챔버(11)의 일측에는 벨트(16)의 이송속도를 검출하기 위한 속도검출기(20)가 설치되어 있고, 그 속도검출기(20)에는 벨트(16)의 이송속도에 따라 가스분사기(12)들에서 분사되는 가스의 양을 조절하기 위한 콘트롤러(21)가 설치되어 있다.In addition, a speed detector 20 for detecting a conveying speed of the belt 16 is installed at one side of the process chamber 11, and the speed detector 20 has a gas injector according to the conveying speed of the belt 16. A controller 21 is provided for adjusting the amount of gas injected from the twelve.

상기와 같이 구성되어 있는 본 발명 반도체 웨이퍼 제조용 벨트식 화학기상증착장치는 로딩부측에서 웨이퍼(14)를 트레이(15)에 탑재하면 그 트레이(15)는 구동수단에 의하여 이동하는 벨트(16)에 의하여 일정속도로 이동하게 되고, 그와 같이 이동되는 웨이퍼(14)의 상면에 가스분사기(13)에서 공정가스를 분사하여 웨이퍼(14)의 상면에 일정두께의 증착막을 증착시키게 된다.In the belt type chemical vapor deposition apparatus of the present invention configured as described above, when the wafer 14 is mounted on the tray 15 at the loading side, the tray 15 is attached to the belt 16 moved by the driving means. By moving at a constant speed, a process gas is injected from the gas injector 13 onto the upper surface of the wafer 14 thus moved to deposit a deposition film having a predetermined thickness on the upper surface of the wafer 14.

한편, 상기와 같이 이동하는 벨트(16)가 구동수단 또는 여타의 이유에 의하여 규정속도 보다 느리게 이동하거나 빠르게 이동하는 경우가 발생되는데, 그때는 속도검출기(20)에서 검출되는 속도를 콘트롤러(21)에 규정치와 비교하여 규정치를 벗어나는 경우에 적정양의 공정가스가 공급되도록 가스분사기(13)의 가스공급량을 조절한다.On the other hand, when the belt 16 moving as described above moves slower or faster than the prescribed speed due to the driving means or other reasons, the controller 21 detects the speed detected by the speed detector 20. The gas supply amount of the gas injector 13 is adjusted so that an appropriate amount of process gas is supplied when it is out of the prescribed value compared with the prescribed value.

즉, 벨트(16)의 이동속도가 규정치보다 느린 경우에는 공정가스(12)의 양이 적게 공급되도록 하고, 벨트(16)의 이동속도가 규정치 보다 빠른 경우에는 공정가스(12)의 양이 많이 공급되도록 하여 웨이퍼(14)에 일정양의 공정가스(12)가 공급되도록 함으로써 웨이퍼(14)의 증착되는 증착막의 두께 균일도를 향상시키게 된다.That is, when the moving speed of the belt 16 is slower than the prescribed value, the amount of process gas 12 is supplied less. When the moving speed of the belt 16 is faster than the prescribed value, the amount of the process gas 12 is large. By supplying a predetermined amount of process gas 12 to the wafer 14, the thickness uniformity of the deposited film deposited on the wafer 14 is improved.

이상에서 상세히 설명한 바와 같이, 본 발명 반도체 웨이퍼 제조용 벨트식 화학기상증착장치는 벨트의 이송속도를 검출하기 위한 속도검출기와, 그 벨트의 이송속도에 따라 분사되는 공정가스의 양을 조절하기 위한 콘트롤러를 구비하여, 벨트의 이동속도가 규정치보다 느린 경우에는 가스분사기에서 적은 양의 공정가스가 분사되도록 하고, 빠른 경우에는 가스분사기에서 많은 양의 공정가스가 분사되도록 하함으로써, 웨이퍼에 공급되는 공정가스의 양이 항상 일정하게 공급되게 되어 웨이퍼에 증착되는 증착막의 두께 균일도를 향상시키는 효과가 있다.As described above in detail, the belt type chemical vapor deposition apparatus for semiconductor wafer manufacturing according to the present invention includes a speed detector for detecting a conveying speed of the belt, and a controller for adjusting the amount of process gas injected according to the conveying speed of the belt. When the moving speed of the belt is slower than the prescribed value, a small amount of process gas is injected from the gas injector and a large amount of process gas is injected from the gas injector, so that the process gas is supplied to the wafer. Since the amount is always supplied constantly, there is an effect of improving the thickness uniformity of the deposited film deposited on the wafer.

Claims (1)

공정 챔버의 내측에 수개의 가스분사기가 구비되어 있고, 그 가스분사기의 하측으로 웨이퍼를 각각 탑재한 트레이들이 구비되어 있으며, 그 트레이들은 벨트에 의하여 챔버의 하측에서 이동하도록 되어 있는 벨트식 화학기상증착장치에 있어서, 상기 벨트의 이송속도를 검출하기 위한 속도검출기와, 그 벨트의 이송속도에 따라 가스분사기의 가스분사량을 콘트롤하기 위한 콘트롤러를 구비하여서 구성되는 것을 특징으로 하는 반도체 웨이퍼 제조용 벨트식 화학기상증착장치.Several gas injectors are provided inside the process chamber, and trays each having wafers mounted under the gas injector are provided, and the trays are belt-type chemical vapor deposition which is moved by the belt under the chamber. An apparatus, comprising: a speed detector for detecting a conveying speed of the belt, and a controller for controlling a gas ejection amount of the gas injector in accordance with the conveying speed of the belt. Vapor deposition apparatus.
KR1020000007608A 2000-02-17 2000-02-17 Belt type cvd apparatus for semiconductor wafer KR20010083628A (en)

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