KR102269346B1 - Substrate processing apparatus - Google Patents

Abstract

The present invention relates to a substrate processing apparatus capable of forming a thin film on a substrate, wherein the first substrate is disposed in a first process region between a first substrate support supporting a first substrate and a first shower head spraying a process gas. A first chamber for processing, a second chamber for processing the second substrate in a second processing region between a second substrate support supporting the second substrate and a second shower head spraying the processing gas; a first pressure sensor installed in the chamber to measure the pressure in the first process region; a second pressure sensor installed in the second chamber to measure the pressure in the second process region; a process gas supply unit connected to the upper part of the second chamber and supplying the process gas to the first and second shower heads, and connected to the lower part of the first chamber and the lower part of the second chamber; A pumping unit capable of simultaneously pumping and exhausting residual gas discharged after processing in the first process region and the second process region, and installed below the first process region and the second process region, It may include a pressure control gas supply unit for supplying the pressure control gas to the chamber or the second chamber.

Description

Substrate processing apparatus

The present invention relates to a semiconductor device, and more particularly, to an apparatus capable of processing a substrate in a vacuum atmosphere.

In order to manufacture a semiconductor device, a display device, or a solar cell, various processes are performed in a substrate processing apparatus including a vacuum chamber. For example, a process such as loading a substrate into the chamber and depositing a thin film on the substrate or etching the thin film may be performed. A substrate processing apparatus having a pair of chambers is also used in order to improve processing efficiency of a substrate by processing a pair of substrates at a time among such substrate processing apparatuses.

In general, in a substrate processing apparatus having a pair of chambers, an exhaust pipe is connected to each chamber, and the exhaust pipe is connected to one pumping duct. A throttle valve is installed in the pumping duct, and a vacuum pump is connected to an end of the pumping duct. In the substrate processing apparatus configured as described above, a pair of chambers are exhausted together when the vacuum pump is driven. In this case, the pressure of the pair of chambers may be adjusted by controlling a throttle valve of the pumping duct.

However, such a conventional substrate processing apparatus has a problem in that there is no method for individually adjusting the pressures of each chamber to be the same when a pressure change in each chamber occurs in a structure in which gas is simultaneously branched and supplied to a plurality of chambers. In addition, the known technology has an individual branch supply structure, and even in each individual branch supply structure, when a pressure control gas other than the process gas is supplied through the shower head, there is a problem in that the characteristics of the thin film deposited on the substrate are changed.

The present invention is to solve various problems including the above problems, and includes a pressure control gas supply unit for supplying a purge gas for pressure control to each chamber space except for the process area, so that the pressure difference value for each chamber is provided. An object of the present invention is to provide a substrate processing apparatus capable of uniformly controlling the pressures of all chambers included in the substrate processing apparatus by supplying a pressure control gas corresponding to the amount. However, these problems are exemplary, and the scope of the present invention is not limited thereto.

According to one aspect of the present invention, a substrate processing apparatus is provided. The substrate processing apparatus may include: a first chamber for processing the first substrate in a first process region between a first substrate support supporting a first substrate and a first shower head for spraying a process gas; a second chamber for processing the second substrate in a second process region between a second substrate support supporting the second substrate and a second shower head spraying the process gas; a first pressure sensor installed in the first chamber to measure the pressure of the first process region; a second pressure sensor installed in the second chamber to measure the pressure in the second process region; a process gas supply unit connected to an upper portion of the first chamber and an upper portion of the second chamber to supply the process gas to the first shower head and the second shower head; a pumping unit connected to the lower part of the first chamber and the lower part of the second chamber to simultaneously pump and exhaust the residual gas discharged after the process is performed in the first process region and the second process region; a pressure regulating gas supply unit installed under the first process region and the second process region to supply a pressure regulating gas to the first chamber or the second chamber; and supplying the pressure control gas to the first chamber side or the second chamber side to compensate for a pressure difference value between the pressure measured by the first pressure sensor and the pressure measured by the second pressure sensor. It may include; a control unit for controlling the control gas supply unit.

In the substrate processing apparatus, the pumping unit communicates with a first exhaust port under the first chamber and a second exhaust port under the second chamber, so as to simultaneously exhaust the first chamber and the second chamber. a pumping duct with a common exhaust port; and a pumping line having one side connected to the pumping duct and the other side connected to the vacuum pump, wherein the pressure control gas supply unit includes: a first supply unit for supplying the pressure control gas to the first chamber side; and a second supply unit configured to supply the pressure control gas to the second chamber.

In the substrate processing apparatus, the pressure control gas supply unit may include: the first supply unit is installed below the first process region of the first chamber to supply the pressure control gas to the first chamber; The pressure control gas may be supplied to the second chamber by being installed under the second process region of the second chamber.

In the substrate processing apparatus, the pressure control gas supply unit, wherein the first supply unit is provided in the pumping duct and is provided between the first exhaust port and the common exhaust port to supply the pressure control gas to the first chamber, , The second supply unit may be provided in the pumping duct and may be provided between the second exhaust port and the common exhaust port to supply the pressure control gas to the second chamber side.

In the substrate processing apparatus, when the pressure in the first process region is low, the controller controls the first supply unit to supply the pressure control gas to the first chamber, and when the pressure in the second process region is low, the control unit supplies the pressure control gas to the first chamber. The pressure control gas may be supplied to the second chamber by controlling the second supply unit.

In the substrate processing apparatus, the controller is configured to measure a basic pressure difference value between the first process region and the second process region due to a hardware structure deviation between the first chamber and the second chamber before the process is performed with the first pressure sensor. and calculating in advance using the second pressure sensor, and controlling the supply of the pressure control gas of the pressure control gas supply unit based on the basic pressure difference value.

In the substrate processing apparatus, the controller is configured to transfer the first pressure measurement difference value that is the first pressure measurement difference value between the first process region and the second process region to the first process region and the second process region. The basic pressure difference value is calculated by calculating an average of a second pressure measurement difference value that is a pressure measurement difference value measured in a state in which the process gas is supplied, and the first or second chamber pressure is relatively low. It is possible to control to supply the pressure control gas as much as the basic pressure difference value.

In the substrate processing apparatus, when the second pressure measurement difference is calculated, the control unit provides the first chamber and the second chamber through the process gas supply unit in a state in which the pumping line of the pumping unit is maximally opened. In a state in which a predetermined gas is injected at a predetermined flow rate, pressures in the first process region and the second process region may be measured using the first pressure sensor and the second pressure sensor.

In the substrate processing apparatus, the process gas supply unit may distribute and supply the process gas supplied through the main line unit to the first shower head and the second shower head through a distributor.

In the substrate processing apparatus, the process gas supply unit may supply the process gas to the first shower head and the second shower head, respectively.

According to the substrate processing apparatus according to the embodiment of the present invention made as described above, a pressure control gas supply unit for supplying a pressure control gas to each chamber space except for the process area is provided, and a pressure control gas supply unit corresponding to a pressure difference value for each chamber By supplying an amount of the pressure control gas, the pressures of all chambers included in the substrate processing apparatus can be controlled substantially equally.

Accordingly, it is possible to control the deviation for each chamber through the supply of the pressure control gas without changing the process parameters, and by maintaining the same process environment in each chamber to easily form a uniform thin film on a plurality of substrates at the same time, processing in each chamber It is possible to implement a substrate processing apparatus that can have the effect of uniformly maintaining the quality of the substrate. Of course, the scope of the present invention is not limited by these effects.

1 is a cross-sectional view schematically illustrating a substrate processing apparatus according to an embodiment of the present invention.
2 is a cross-sectional view schematically illustrating a substrate processing apparatus according to another exemplary embodiment of the present invention.
3 is a cross-sectional view schematically illustrating a substrate processing apparatus according to another embodiment of the present invention.

Hereinafter, several preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

Examples of the present invention are provided to more completely explain the present invention to those of ordinary skill in the art, and the following examples may be modified in various other forms, and the scope of the present invention is as follows It is not limited to an Example. Rather, these embodiments are provided so as to more fully and complete the present disclosure, and to fully convey the spirit of the present invention to those skilled in the art. In addition, in the drawings, the thickness or size of each layer is exaggerated for convenience and clarity of description.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of the present invention will be described with reference to the drawings schematically illustrating ideal embodiments of the present invention. In the drawings, variations of the illustrated shape can be expected, for example depending on manufacturing technology and/or tolerances. Accordingly, embodiments of the inventive concept should not be construed as limited to the specific shape of the region shown in the present specification, but should include, for example, changes in shape caused by manufacturing.

1 is a cross-sectional view schematically illustrating a substrate processing apparatus 100 according to an exemplary embodiment.

First, as shown in FIG. 1 , the substrate processing apparatus 100 according to an embodiment of the present invention includes a first chamber 10 , a second chamber 20 , and a process gas supply unit 30 . , a pumping unit 40 , a pressure control gas supply unit 50 , and a first pressure sensor 60 and a second pressure sensor 70 .

As shown in FIG. 1 , the first chamber 10 includes a first process between the first substrate support 12 supporting the first substrate S1 and the first shower head 14 for spraying the process gas. The first substrate S1 may be processed in the area A1 . In addition, the second chamber 20 is formed in the second process area A2 between the second substrate support 22 supporting the second substrate S2 and the second shower head 24 that sprays the process gas. The second substrate S2 may be processed. For example, the first chamber 10 and the second chamber 20 may be twin chambers arranged in parallel with each other to share the process gas supply unit 30 and the pumping unit 40 .

More specifically, the first chamber 10 includes a first body 11 having an open top and in which a first process area A1 capable of processing the first substrate S1 is formed, and the first substrate S1. ) formed on the upper portion of the first body 11 so as to cover at least a portion of the first substrate support 12 installed in the inner space of the first chamber 10 to support, and at least a portion of the upper portion of the first body 11 . It is installed on the first lead 13 to face the first lead 13 and the first substrate support 12 , and is connected to the process gas supply unit 30 to supply the process gas toward the first substrate support 12 . It may include a first shower head 14 for spraying.

For example, the first body 11 has an internal space including a first process region A1 formed in a circular shape therein, and is supported by a first substrate support 12 installed in the internal space. A process such as depositing a thin film on the substrate S1 or etching the thin film may be performed. Also, a gate (not shown) for loading or unloading the first substrate S1 into the first process region A1 may be formed on a side surface of the first body 11 .

Also, the first lead 13 may be coupled to the upper portion of the first body 11 to close the interior of the first body 11 . At this time, the first lead 13 may be formed to cover the entire upper portion of the first body 11 , and as shown in FIG. 1 , is coupled with the first shower head 14 to at least the first It may be formed so as to cover a portion of the upper portion of the body 11 .

In addition, the second chamber 20 may include a second body 21 , a second substrate support 22 , a second lid 23 , and a second shower head 24 . Here, the second body 21, the second substrate support 22, the second lid 23, and the second shower head 24 are, according to the embodiment of the present invention shown in FIG. The components of the first chamber 10 may have the same configuration and role. Therefore, detailed description is omitted.

As shown in FIG. 1 , the process gas supply unit 30 is connected to the upper part of the first chamber 10 and the upper part of the second chamber 20 , and the first shower head 14 and the second shower head ( 24) may be supplied with the process gas. For example, the process gas supply unit 30 may distribute and supply the process gas supplied through the main line unit 31 to the first shower head 14 and the second shower head 24 through the distributor 35 . have.

More specifically, the process gas supply unit 30 includes the main line unit 31 for supplying the process gas and the main line unit to control the flow rate of the process gas supplied through the main line unit 31 . A flow control device 32 installed on one side of the 31 , a first branch line 33 connected to the main line 31 to supply the process gas to the first shower head 14 ; The second branch line part 34 is connected to the line part 31 and supplies the process gas to the second shower head 24 , and between the first branch line part 33 and the second branch line part 34 . It may include a distributor 35 for distributing the process gas supplied through the main line part 31 to the first branch line part 33 and the second branch line part 34 at the same pressure and flow rate. have.

Accordingly, the process gas supplied through the main line unit 31 of the process gas supply unit 30 is distributed at the same pressure and flow rate through the distributor 35 composed of a splitter or a T-distributor, and the first It may be simultaneously supplied to the first shower head 14 and the second shower head 24 through the branch line part 33 and the second branch line part 34 .

Accordingly, the process gas can be simultaneously supplied to the plurality of shower heads 14 and 24 through one process gas supply unit 30 at the same pressure and flow rate, thereby simplifying the supply line of the process gas to the substrate processing apparatus ( 100) can reduce the installation cost and facilitate the maintenance of the device.

The pumping unit 40 is connected to the lower portion of the first chamber 10 and the lower portion of the second chamber 20 , and is discharged after the process is performed in the first process area A1 and the second process area A2 . The gas can be pumped out at the same time. More specifically, the pumping unit 40 communicates with the first exhaust port P1 under the first chamber 10 and the second exhaust port P2 under the second chamber 20, the first chamber ( 10) and the second chamber 20 is formed between the pumping duct 41 provided with a common exhaust port P3 so as to simultaneously exhaust the first chamber 10 and the second chamber 20, One side is connected to the pumping duct 41 and the other side is connected to a vacuum pump (not shown), and a pumping line that simultaneously exhausts the residual gas pumped from the first chamber 10 and the second chamber 20 after the process ( 42 ) and a valve part 43 installed inside the pumping line 42 to control the amount of the residual gas to be exhausted.

At this time, the pumping line 42 is spaced apart from the first chamber 10 and the first chamber 10 so as to simultaneously pump the residual gas discharged from the first chamber 10 and the second chamber 20 at the same pressure. 2 may be connected to the pumping duct 41 at the same distance spaced apart from the chamber 20 .

Since the first chamber 10 and the second chamber 20 are connected to the same pumping line 42 through the pumping duct 41 and pumped simultaneously, the pumping of the first chamber 10 and the second chamber 20 The lower portion near the duct 41 may have substantially the same pressure value. However, due to the hardware difference between the first chamber 10 and the second chamber 20 , the first chamber 10 and the second chamber 20 are actually processed in the process regions A1 and A2 due to the difference in the velocity field of the process gas. The pressure in the chamber 20 may not be the same. In order to compensate for such a pressure difference, the pressure control gas supply unit 50 is installed under the first process area A1 and the second process area A2, and the first chamber 10 or the second chamber 20 ) to supply the pressure control gas.

For example, the pressure control gas supply unit 50 includes a first supply unit 51 for supplying the pressure control gas to the first chamber 10 and a second supply unit for supplying the pressure control gas to the second chamber 20 side ( 52) may be included. More specifically, the pressure control gas supply unit 50 is provided with a first supply unit 51 provided in the pumping duct 41 between the first exhaust port P1 and the common exhaust port P3 to provide a first chamber ( 10) supplies the pressure control gas to the side, and a second supply part 52 is provided in the pumping duct 41 and is provided between the second exhaust port P2 and the common exhaust port P3 to provide a second chamber 20 The pressure control gas may be supplied to the side.

Therefore, during the processing of the substrates S1 and S2, the pumping unit 40 is connected to the first chamber 10 and the second chamber 20 through the pumping line 42 connected to the center of the pumping duct 41. At the same time, the discharged residual gas is pumped and exhausted at the same pressure, and the pressure control gas supply unit 50 is disposed in the lower portion of the first process area A1 of the first chamber 10 or through the first purge gas supply unit 51 . The pressure control gas is supplied to the lower portion of the second process area A2 of the second chamber 20 through the second purge gas supply unit 52 to provide a pressure difference between the first chamber 10 and the second chamber 20 . The value can be easily compensated. At this time, the first pressure sensor 60 is installed in the first process area A1 of the first chamber 10 to measure the pressure in the first process area A1, and the second pressure sensor 70 It may be installed in the second process area A2 of the second chamber 20 to measure the pressure in the second process area A2 .

In addition, the control unit (not shown) is electrically connected to the pressure control gas supply unit 50, and is generated due to a deviation of components of the first chamber 10 and the second chamber 20 or a deviation of the chamber itself. In order to compensate for a pressure difference value between the pressure measured by the first pressure sensor 60 and the pressure measured by the second pressure sensor 70, the pressure regulating gas is directed to the first chamber 10 side or the second chamber 20 side. It is possible to control the pressure control gas supply unit 50 to supply the.

More specifically, when the pressure in the first process region A1 is low, the controller controls the first supply unit 51 to supply the pressure control gas to the first chamber 10 side, and to supply the pressure control gas to the second process region A2 . ) when the pressure is low, the pressure control gas may be supplied to the second chamber 20 by controlling the second supply unit 52 .

Accordingly, when the pressure in the first process region A1 is low, the controller may apply a control signal to the first supply unit 51 to open the first supply unit 51 . Subsequently, the pressure control gas introduced into the internal space except for the first process area A1 of the first chamber 10 through the first supply unit 51 is discharged to the outside of the first chamber 10 . By stopping the flow of the gas, the pressure of the first process region A1 may be increased. Also, even when the pressure in the second process region A2 is low, the pressure in the second process region A2 may be increased by the same mechanism as the above-described method.

In addition, the control unit controls a basic pressure difference value between the first process area A1 and the second process area A2 due to a hardware structure deviation between the first chamber 10 and the second chamber 20 before the process proceeds. It is calculated in advance using the first pressure sensor 60 and the second pressure sensor 70 , and the supply of the pressure control gas to the pressure control gas supply unit 50 may be controlled based on the basic pressure difference value.

More specifically, the control unit may include a first pressure measurement difference value, which is a first pressure measurement difference value between the first process region A1 and the second process region A2 , and the first process region A1 and the second process region A1 . The basic pressure difference value is calculated by calculating an average of a second pressure measurement difference value that is a pressure measurement difference value measured while the process gas is supplied to the region A2, and the first chamber 10 having a relatively low pressure The pressure control gas may be controlled to be supplied to the side or the second chamber 20 by the basic pressure difference value.

At this time, the control unit, when calculating the second pressure measurement difference value, the first chamber 10 and through the process gas supply unit 30 in a state in which the pumping line 42 of the pumping unit 40 is maximally opened and In a state in which a predetermined gas is injected into the second chamber 20 at a predetermined flow rate, the first process area A1 and the second process area A2 are used using the first pressure sensor 60 and the second pressure sensor 70 . ) can be measured.

Accordingly, the control unit applies a control signal to the process gas supply unit 30 and the pumping unit 40 when calculating the basic pressure difference value, and the process gas supply unit 30 in a state in which the valve unit 43 is maximally opened. ), the predetermined gas may be simultaneously sprayed to the first shower head 14 and the second shower head 24 at the same pressure and flow rate. Accordingly, the predetermined gas injected through the first shower head 14 and the second shower head 24 passes through the first process area A1 or the second process area A2, respectively, and the pumping unit 40 ) can be released through

In the above state, the second pressure measurement difference between the first chamber 10 and the second chamber 20 is calculated using the first pressure sensor 60 and the second pressure sensor 70, and in advance The basic pressure difference value may be calculated by calculating an average of the first pressure measurement difference value measured during the process. In this case, the control unit measures the pressure value of the first process region A1 and the pressure value of the second process region A2 at least once, and the error of the basic pressure difference calculated three times is within 10% In this case, the average value of the measured values is finally stored as the basic pressure difference value, and if the error is 10% or more, the measurement can be repeated three times until the error is within 10%.

In this way, the calculated basic pressure difference value is stored in the control unit, and the control unit is configured to compensate the basic pressure difference value between the first process region A1 and the second process region A2 during the process. A control signal may be appropriately applied to the pressure control gas supply unit 40 based on the stored basic pressure difference value.

In addition, the control unit receives the pressure values of the first process area A1 and the second process area A2 from the first pressure sensor 60 and the second pressure sensor 70 during the process and compares them in real time. When a pressure difference value occurs, the pressure control gas supply unit 50 may be controlled in real time to supply the pressure control gas to the first chamber 10 side or the second chamber 20 side.

For example, during the process, the control unit receives the pressure values of the first process region A1 and the second process region A2 from the first pressure sensor 60 and the second pressure sensor 70 in real time, and the first process When a pressure difference value between the area A1 and the second process area A2 occurs, the control unit applies a control signal to the pressure control gas supply unit 50 , and the first supply unit 51 or the second supply unit 52 ) to increase the pressure of the first process area A1 or the second process area A2 by introducing a pressure control gas into the first chamber 10 side or the second chamber 20 side, in real time The pressure difference value may be compensated.

Therefore, the substrate processing apparatus 100 according to an embodiment of the present invention includes the pressure control gas supply unit 50 for supplying the pressure control gas to the process areas A1 and A2 of each of the chambers 10 and 20 . Accordingly, by supplying the pressure control gas corresponding to the pressure difference value for each chamber 10 and 20 , the pressures of the respective process areas A1 and A2 of the chambers 10 and 20 may be equally controlled.

In addition, when the pressure difference between the chambers 10 and 20 is compensated for in real time during the process according to the need for the process, the pressure sensors 60 and 70 of the respective chambers 10 and 20 send the pressure measurement value to the controller in real time. and the pressure control gas supply unit 50 receives the control signal from the control unit and supplies the pressure control gas corresponding to the pressure difference value for each chamber 10 and 20 in real time, thereby providing a chamber during the process. Even if an environmental change occurs in 10 and 20 , the pressures of all chambers 10 and 20 included in the substrate processing apparatus 100 may be equally controlled in real time.

Accordingly, it is possible to control the deviation for each chamber (10, 20) through the supply of the pressure control gas without changing the process parameters, so that the process environment of each chamber (10, 20) is maintained to be uniform thin film on a plurality of substrates By simultaneously forming or performing uniform etching, the quality of the substrates processed in each chamber 10 and 20 may be uniformly maintained.

2 is a cross-sectional view schematically illustrating a substrate processing apparatus 200 according to another exemplary embodiment of the present invention.

2, the pressure control gas supply unit 50 is installed at the end of the first chamber 10 side of the pumping duct 41 to supply the pressure control gas to the first supply unit 51 and the pumping duct ( The second supply unit 52 installed at the end of the second chamber 20 side of the 41 , and supplying the pressure control gas may be included.

For example, during the processing of the substrates S1 and S2 , the pumping unit 40 is connected to the first chamber 10 and the second chamber 20 through the pumping line 42 connected to the center of the pumping duct 41 . At the same time, the discharged residual gas is pumped and exhausted at the same pressure, and the pressure regulating gas supply unit 50, through the first supply unit 51 and the second supply unit 52, of the pumping duct 41 of the pumping unit 41 through the By supplying the pressure control gas to one side or the other side, the pressure difference between the first chamber 10 and the second chamber 20 can be easily compensated.

More specifically, when the pressure in the first process region A1 of the first chamber 10 is low, the controller controls the first supply unit 51 to pump the pressure control gas through the pumping duct 41 to the first chamber When the pressure in the second process region A2 of the second chamber 20 is low, the second supply unit 52 is controlled to supply the pressure control gas to the side 10 and the pressure control gas is pumped through the pumping duct 41 to the second It can be supplied to the chamber 20 side.

Accordingly, when the pressure in the first chamber 10 is low, the control unit may apply a control signal to the first supply unit 51 to open the first supply unit 51 . Subsequently, the pressure control gas introduced into the inner space of the first chamber 10 except for one side of the pumping duct 41 and the first process area A1 through the first supply unit 51 is applied to the first chamber 10 . ), by stopping the flow of the residual gas to be exhausted to the outside, the pressure of the first process area A1 may be increased. Also, even when the pressure in the second chamber 20 is low, the pressure in the second process region A2 may be increased by the same mechanism as the above-described method.

Therefore, the substrate processing apparatus 200 according to another embodiment of the present invention includes the pressure control gas supply unit 50 for supplying the pressure control gas to the process areas A1 and A2 of each of the chambers 10 and 20 . Accordingly, by supplying the pressure control gas corresponding to the pressure difference value for each chamber 10 and 20 , the pressures of the respective process areas A1 and A2 of the chambers 10 and 20 may be equally controlled.

Accordingly, it is possible to control the deviation for each chamber (10, 20) through the supply of the pressure control gas without changing the process parameters, so that the process environment of each chamber (10, 20) is maintained to be uniform thin film on a plurality of substrates By simultaneously forming or performing uniform etching, the quality of the substrates processed in each chamber 10 and 20 may be uniformly maintained.

3 is a cross-sectional view schematically illustrating a substrate processing apparatus 300 according to another embodiment of the present invention.

3 , the process gas supply unit 30 may supply process gases to the first shower head 14 and the second shower head 24 , respectively.

More specifically, the process gas supply unit 30 is connected to the first main line unit 31-1 for supplying the process gas to the first shower head 14 and through the first main line unit 31-1. In order to control the flow rate of the supplied process gas, the first flow control device 32-1 installed on one side of the first main line part 31-1 and the second shower head 24 are provided with the process gas. A second main line unit 31-2 for controlling the flow rate of the process gas supplied through the second main line unit 31-2 and the second main line unit 31-2 for supplying gas. It may include a second flow control device (32-2) installed on one side of the.

Accordingly, the process gas supply unit 30 includes separate main line units 31-1 and 31-2 and flow rate control devices 32-1 and 32-2 for each chamber 10 and 20, respectively. It is possible to more precisely control the pressure and flow rate of the process gas supplied to the chambers 10 and 20 to be the same. Accordingly, the pressure and flow rate of the process gas injected to the first shower head 14 and the second shower head 24 are more stably controlled, so that the pressure control gas supply unit 50 is connected to the first chamber 10 and When the pressure difference value of the second chamber 20 is compensated, the pressure difference value may be more accurately compensated.

Therefore, it is possible to control the deviation for each chamber 10 and 20 through the supply of the purge gas for pressure control without changing the process parameters, and by maintaining the process environment of each chamber 10 and 20 the same, each chamber 10 and 20 It may have the effect of maintaining uniform quality of the substrate to be processed.

Although the present invention has been described with reference to the embodiment shown in the drawings, which is merely exemplary, those skilled in the art will understand that various modifications and equivalent other embodiments are possible therefrom. Therefore, the true technical protection scope of the present invention should be determined by the technical spirit of the appended claims.

10: first chamber
20: second chamber
30: process gas supply
40: pumping unit
50: pressure regulating gas supply
60: first pressure sensor
70: second pressure sensor
S1: first substrate
S2: second substrate
100, 200, 300: substrate processing apparatus

Claims (10)

a first chamber for processing the first substrate in a first process region between a first substrate support for supporting the first substrate and a first shower head for spraying a process gas;
a second chamber for processing the second substrate in a second process region between a second substrate support supporting the second substrate and a second shower head spraying the process gas;
a first pressure sensor installed in the first chamber to measure the pressure of the first process region;
a second pressure sensor installed in the second chamber to measure the pressure in the second process region;
a process gas supply unit connected to an upper portion of the first chamber and an upper portion of the second chamber to supply the process gas to the first shower head and the second shower head;
a pumping unit connected to the lower part of the first chamber and the lower part of the second chamber to simultaneously pump and exhaust the residual gas discharged after the process is performed in the first process region and the second process region;
a pressure regulating gas supply unit installed under the first process region and the second process region to supply a pressure regulating gas to the first chamber or the second chamber; and
To compensate for a pressure difference value between the pressure measured by the first pressure sensor and the pressure measured by the second pressure sensor, the pressure control gas may be supplied to the first chamber side or the second chamber side. Including; a control unit for controlling the gas supply unit;
The pumping unit,
a pumping duct communicating with the first exhaust port under the first chamber and the second exhaust port under the second chamber, the pumping duct having a common exhaust port to simultaneously exhaust the first chamber and the second chamber; and
A pumping line having one side connected to the pumping duct and the other side connected to the vacuum pump; includes,
The pressure control gas supply unit,
a first supply unit for supplying the pressure control gas to the first chamber; and
Including; a second supply unit for supplying the pressure control gas to the second chamber side,
The control unit is
When the pressure in the first process region is low, the pressure control gas is supplied to the first chamber by controlling the first supply unit, and when the pressure in the second process region is low, the pressure is adjusted by controlling the second supply unit. supplying gas to the second chamber,
Before the process is performed, a basic pressure difference value between the first process region and the second process region due to a hardware structure deviation between the first chamber and the second chamber is previously calculated using the first pressure sensor and the second pressure sensor. and controlling the supply of the pressure regulating gas of the pressure regulating gas supply unit based on the basic pressure difference value. delete The method of claim 1,
The pressure control gas supply unit,
The first supply unit is installed below the first process region of the first chamber to supply the pressure control gas to the first chamber, and the second supply unit is installed below the second process region of the second chamber. and supplying the pressure control gas to the second chamber side. a first chamber for processing the first substrate in a first process region between a first substrate support for supporting the first substrate and a first shower head for spraying a process gas;
a second chamber for processing the second substrate in a second process region between a second substrate support supporting the second substrate and a second shower head spraying the process gas;
a first pressure sensor installed in the first chamber to measure the pressure of the first process region;
a second pressure sensor installed in the second chamber to measure the pressure in the second process region;
a process gas supply unit connected to an upper portion of the first chamber and an upper portion of the second chamber to supply the process gas to the first shower head and the second shower head;
a pumping unit connected to the lower part of the first chamber and the lower part of the second chamber to simultaneously pump and exhaust the residual gas discharged after the process is performed in the first process region and the second process region;
a pressure regulating gas supply unit installed under the first process region and the second process region to supply a pressure regulating gas to the first chamber or the second chamber; and
To compensate for a pressure difference value between the pressure measured by the first pressure sensor and the pressure measured by the second pressure sensor, the pressure control gas may be supplied to the first chamber side or the second chamber side. Including; a control unit for controlling the gas supply unit;
The pumping unit,
a pumping duct communicating with the first exhaust port under the first chamber and the second exhaust port under the second chamber, the pumping duct having a common exhaust port to simultaneously exhaust the first chamber and the second chamber; and
A pumping line having one side connected to the pumping duct and the other side connected to the vacuum pump; includes,
The pressure control gas supply unit,
a first supply unit for supplying the pressure control gas to the first chamber; and
Including; a second supply unit for supplying the pressure control gas to the second chamber side,
The pressure control gas supply unit,
The first supply part is provided in the pumping duct and is provided between the first exhaust port and the common exhaust port to supply the pressure control gas to the first chamber, and the second supply part is provided in the pumping duct. A substrate processing apparatus provided between a second exhaust port and the common exhaust port to supply the pressure control gas to the second chamber. delete delete The method of claim 1,
The control unit is
A first pressure difference value, which is a first pressure measurement difference value between the first process region and the second process region, and a pressure measured while the process gas is supplied to the first process region and the second process region The basic pressure difference value is calculated by calculating the average of the second pressure measurement difference value, which is the measurement difference value, and the pressure control gas is supplied by the basic pressure difference value to the first chamber side or the second chamber side having a relatively low pressure. A substrate processing apparatus that controls to supply. 8. The method of claim 7,
The control unit is
When calculating the second pressure measurement difference, a predetermined gas is injected into the first chamber and the second chamber at a predetermined flow rate through the process gas supply unit in a state in which the pumping line of the pumping unit is maximally opened. and measuring pressures in the first process region and the second process region using the first pressure sensor and the second pressure sensor. The method of claim 1,
The process gas supply unit,
The substrate processing apparatus of claim 1, wherein the process gas supplied through the main line is distributed and supplied to the first shower head and the second shower head through a distributor. The method of claim 1,
The process gas supply unit,
and supplying the process gas to the first shower head and the second shower head, respectively.

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