KR20190012033A - Substrate processing apparatus - Google Patents

Abstract

The present invention relates to a substrate processing apparatus capable of forming a thin film on a substrate. According to the present invention, the substrate processing apparatus comprises: a first chamber to process a first substrate in a first process area between a first substrate support to support a first substrate and a first shower head to inject process gas; a second chamber to process a second substrate in a second process area between a second substrate support to support a second substrate and a second shower head to inject the process gas; a first pressure sensor installed in the first chamber to measure the pressure of the first process area; a second pressure sensor installed in the second chamber to measure the pressure of the second process area; a process gas supply unit connected to the upper part of the first and second chambers to supply the process gas to the first and second shower heads; a pumping unit connected to the lower part of the first and second chambers to simultaneously pump and discharge remaining gas discharged after a process is advanced in the first and second process areas; and a pressure adjustment gas supply unit installed in the lower part of the first and second process area to supply pressure adjustment gas to the first or second chamber.

Description

[0001] Substrate processing apparatus [

The present invention relates to a semiconductor device, and more particularly to a device capable of processing a substrate in a vacuum atmosphere.

In order to manufacture a semiconductor device, a display device, or a solar cell, various processes are performed in a substrate processing apparatus including a vacuum chamber. For example, a process such as loading a substrate in a chamber and depositing a thin film on the substrate or etching the thin film may be performed. Among these substrate processing apparatuses, a substrate processing apparatus having a pair of chambers is also used to improve the processing efficiency of the substrate by processing a pair of substrates at a time.

Generally, in a substrate processing apparatus having a pair of chambers, an exhaust pipe is connected to each chamber, and the exhaust pipe is connected to one pumping duct. A throttle valve is installed in the pumping duct, and a vacuum pump is connected to the end of the pumping duct. In the substrate processing apparatus constructed as described above, when the vacuum pump is driven, a pair of chambers are exhausted together. At this time, the pressure of the pair of chambers can be adjusted by controlling the throttle valve of the pumping duct.

However, in such a conventional substrate processing apparatus, there is a problem that there is no method for equally adjusting the pressures of the individual chambers individually when the pressure changes in each chamber in a structure in which gases are simultaneously branched and supplied to a plurality of chambers. In addition, the known technique has a separate branch supply structure. In the case of supplying the pressure regulating gas outside the process gas through the shower head in each individual branch supply structure, the characteristics of the thin film deposited on the substrate are changed.

The present invention has been made to solve the above-mentioned problems, and it is an object of the present invention to provide a pressure regulating gas supply unit for supplying pressure regulating purge gas to each chamber space except a process region, By controlling the pressure of all of the chambers included in the substrate processing apparatus by supplying the pressure control gas as much as possible. However, these problems are illustrative and do not limit the scope of the present invention.

According to one aspect of the present invention, a substrate processing apparatus is provided. The substrate processing apparatus comprising: a first chamber for processing the first substrate in a first process region between a first substrate support for supporting a first substrate and a first showerhead for injecting a process gas; A second chamber for processing the second substrate in a second process region between a second substrate support for supporting a second substrate and a second showerhead for injecting the process gas; A first pressure sensor installed in the first chamber and measuring a pressure of the first process area; A second pressure sensor installed in the second chamber for measuring a pressure of the second process area; A process gas supply unit connected to an upper portion of the first chamber and an upper portion of the second chamber to supply the process gas to the first showerhead and the second showerhead; A pumping unit connected to a lower portion of the first chamber and a lower portion of the second chamber and capable of simultaneously pumping and discharging the residual gas discharged after the process in the first process region and the second process region; A pressure regulating gas supply unit installed below the first process area and the second process area to supply a pressure regulating gas to the first chamber or the second chamber; And a second pressure sensor for detecting a pressure difference between the pressure measured by the first pressure sensor and the pressure measured by the second pressure sensor so as to supply the pressure regulating gas to the first chamber side or the second chamber side, And a control unit for controlling the regulating gas supply unit.

In the substrate processing apparatus, the pumping section is communicated with a first exhaust port in the lower portion of the first chamber and a second exhaust port in the lower portion of the second chamber, and is configured to exhaust the first chamber and the second chamber simultaneously A pumping duct having a common exhaust port; And a pumping line having one side connected to the pumping duct and the other side connected to a vacuum pump, wherein the pressure regulating gas supply unit includes: a first supply unit for supplying the pressure regulating gas to the first chamber side; And a second supply unit for supplying the pressure regulating gas to the second chamber side.

In the substrate processing apparatus, the pressure regulating gas supply unit may be configured such that the first supply unit is provided below the first processing zone of the first chamber to supply the pressure regulating gas to the first chamber side, And the pressure regulating gas may be supplied to the second chamber side under the second processing region of the second chamber.

In the substrate processing apparatus, the pressure regulating gas supply unit may include: a first supply unit provided in the pumping duct and provided between the first exhaust port and the common exhaust port to supply the pressure regulating gas to the first chamber side And the second supply part is provided in the pumping duct and is provided between the second exhaust port and the common exhaust port to supply the pressure regulating gas to the second chamber side.

Wherein the control unit controls the first supply unit to supply the pressure control gas to the first chamber when the pressure in the first process area is low and controls the first supply unit to supply the pressure control gas to the first chamber when the pressure in the second process area is low, The second supply unit may be controlled to supply the pressure regulating gas to the second chamber side.

In the substrate processing apparatus, the controller may control a basic pressure difference value between the first process area and the second process area by a hardware structure deviation of the first chamber and the second chamber, And the second pressure sensor, and the supply of the pressure regulating gas from the pressure regulating gas supply unit can be controlled based on the basic pressure difference value.

In the substrate processing apparatus, the controller may calculate a difference between a first pressure measurement difference value that is a first measured pressure measurement difference value between the first process region and the second process region, Calculating an average of the second pressure measurement difference value, which is a pressure difference value measured in a state where the process gas is supplied, to calculate the basic pressure difference value, and calculating the difference between the first pressure value and the second pressure value, It is possible to control to supply the pressure regulating gas by the basic pressure difference value.

In the substrate processing apparatus, when the second pressure measurement difference value is calculated, the control unit controls the first and second chambers through the process gas supply unit in a state in which the pumping line of the pumping unit is maximally opened. The pressure of the first process area and the pressure of the second process area can be measured using the first pressure sensor and the second pressure sensor in a state in which a predetermined gas is injected at a predetermined flow rate.

In the substrate processing apparatus, the process gas supply unit may distribute the process gas supplied through the main line unit to the first showerhead and the second showerhead through a distributor.

In the substrate processing apparatus, the process gas supply section may supply the process gas to the first showerhead and the second showerhead, respectively.

According to the substrate processing apparatus of the present invention as described above, the pressure regulating gas supply unit for supplying the pressure regulating gas to each of the chamber spaces except for the process region is provided, The pressure of all of the chambers included in the substrate processing apparatus can be controlled to be substantially the same.

Accordingly, it is possible to control the deviation of each chamber through the supply of the pressure control gas without changing the process parameters, so that the process environment of each chamber can be maintained at the same time to easily form a uniform thin film on a plurality of substrates, It is possible to realize a substrate processing apparatus which can have the effect of uniformly maintaining the quality of the substrate. Of course, the scope of the present invention is not limited by these effects.

1 is a cross-sectional view schematically showing a substrate processing apparatus according to an embodiment of the present invention.
2 is a cross-sectional view schematically showing a substrate processing apparatus according to another embodiment of the present invention.
3 is a cross-sectional view schematically showing a substrate processing apparatus according to another embodiment of the present invention.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

The embodiments of the present invention are described in order to more fully explain the present invention to those skilled in the art, and the following embodiments may be modified into various other forms, It is not limited to the embodiment. Rather, these embodiments are provided so that this disclosure will be more thorough and complete, and will fully convey the concept of the invention to those skilled in the art. In the drawings, the thickness and size of each layer are exaggerated for convenience and clarity of explanation.

Hereinafter, embodiments of the present invention will be described with reference to the drawings schematically showing ideal embodiments of the present invention. In the figures, for example, variations in the shape shown may be expected, depending on manufacturing techniques and / or tolerances. Accordingly, the embodiments of the present invention should not be construed as limited to the particular shapes of the regions shown herein, but should include, for example, changes in shape resulting from manufacturing.

1 is a cross-sectional view schematically showing a substrate processing apparatus 100 according to an embodiment of the present invention.

1, a substrate processing apparatus 100 according to an embodiment of the present invention includes a first chamber 10, a second chamber 20, a process gas supply unit 30, A pumping unit 40, a pressure regulating gas supply unit 50, a first pressure sensor 60 and a second pressure sensor 70. [

1, the first chamber 10 includes a first substrate support 12 supporting a first substrate S1 and a first showerhead 14 for spraying a process gas, The first substrate S1 can be processed in the region A1. The second chamber 20 also includes a second processing zone A2 between the second substrate support 22 supporting the second substrate S2 and the second showerhead 24 injecting the process gas The second substrate S2 can be processed. For example, the first chamber 10 and the second chamber 20 may be twin chambers arranged in parallel to each other and sharing the process gas supply unit 30 and the pumping unit 40.

More specifically, the first chamber 10 includes a first body 11 on which a first process area A1 is formed in which an upper portion is opened and a first substrate S1 can be processed, A first substrate supporting base 12 installed in an inner space of the first chamber 10 to support the first body 11 and a second substrate supporting base 12 formed at an upper portion of the first body 11 so as to cover at least a part of the upper portion of the first body 11. [ And is connected to the process gas supply unit 30 and is connected to the first substrate support 12 so as to face the first substrate 13 and the first substrate support 12, And a first showerhead 14 for spraying.

For example, the first body 11 may include an inner space including a first process area A1 formed in a circular shape inside thereof, and may include a first substrate support 12 mounted on the inner space, A thin film may be deposited on the substrate S1 or a thin film may be etched. A gate (not shown) may be formed on the side surface of the first body 11 for loading or unloading the first substrate S1 into the first processing region A1.

The first lead 13 may be coupled to the upper portion of the first body 11 to close the first body 11. In this case, the first lead 13 may be formed to cover the entire upper portion of the first body 11, and may be connected to the first shower head 14, as shown in FIG. 1, Or may be formed so as to cover a part of the upper part of the body 11.

The second chamber 20 may also include a second body 21, a second substrate support 22, a second lead 23 and a second showerhead 24. Here, the second body 21, the second substrate support 22, the second lid 23, and the second showerhead 24 are formed in accordance with an embodiment of the present invention shown in FIG. 1 The constitution and the role of the first chamber 10 may be the same as those of the first chamber 10. Therefore, detailed description is omitted.

1, the process gas supply unit 30 is connected to the upper portion of the first chamber 10 and the upper portion of the second chamber 20 so that the first showerhead 14 and the second showerhead 24). ≪ / RTI > For example, the process gas supply unit 30 can distribute the process gas supplied through the main line unit 31 to the first showerhead 14 and the second showerhead 24 through the distributor 35 have.

More specifically, the process gas supply unit 30 includes a main line unit 31 for supplying the process gas and a main line unit 31 for controlling the flow rate of the process gas supplied through the main line unit 31, A first branch line portion 33 connected to the main line portion 31 to supply the process gas to the first showerhead 14, A second branch line portion 34 connected to the line portion 31 and supplying the process gas to the second showerhead 24 and a second branch line portion 34 connected between the first branch line portion 33 and the second branch line portion 34 And a distributor 35 for distributing the process gas supplied through the main line section 31 to the first branch line section 33 and the second branch line section 34 at the same pressure and flow rate. have.

The process gas supplied through the main line portion 31 of the process gas supply unit 30 is distributed at the same pressure and flow rate through a distributor 35 composed of a splitter or T distributor, Can be simultaneously supplied to the first showerhead 14 and the second showerhead 24 through the branch line portion 33 and the second branch line portion 34. [

Accordingly, the process gas can be simultaneously supplied to the plurality of showerheads 14 and 24 at the same pressure and flow rate by one process gas supply unit 30, so that the substrate processing apparatus 100 can be reduced and the maintenance of the apparatus can be facilitated.

The pumping portion 40 is connected to the lower portion of the first chamber 10 and the lower portion of the second chamber 20 so that the remaining portion of the pumping portion 40 discharged after the process in the first processing region A1 and the second processing region A2 Gas can be pumped and exhausted simultaneously. More specifically, the pumping section 40 communicates with the first exhaust port P1 under the first chamber 10 and the second exhaust port P2 under the second chamber 20, and the first chamber 10 A pumping duct 41 having a common exhaust port P3 for simultaneously exhausting the first chamber 10 and the second chamber 20 and a second chamber 20 formed between the first chamber 10 and the second chamber 20, One end of which is connected to a pumping duct 41 and the other end of which is connected to a vacuum pump (not shown) to exhaust the residual gas pumped in the first and second chambers 10 and 20 And a valve unit 43 installed in the interior of the pumping line 42 and regulating the amount of the residual gas to be exhausted.

At this time, the pumping line 42 is arranged so that the distance separating the first chamber 10 from the first chamber 10 and the distance between the first chamber 10 and the second chamber 20, so that the residual gas discharged from the first chamber 10 and the second chamber 20 can be simultaneously pumped to the same pressure. 2 chamber 20 can be connected to the pumping duct 41 at the same distance.

Since the first chamber 10 and the second chamber 20 are connected to the same pumping line 42 through the pumping duct 41 and pumped at the same time, the pumping of the first chamber 10 and the second chamber 20 The lower portion in the vicinity of the duct 41 may have substantially the same pressure value. However, due to the hardware differences between the first chamber 10 and the second chamber 20, the first chamber 10 and the second chamber 20 in the process areas A1 and A2 where the actual process is performed due to the difference in the velocity fields of the process gases, The pressure in the chamber 20 may not be the same. In order to compensate for such a pressure difference, the pressure regulating gas supply unit 50 is provided below the first process zone A1 and the second process zone A2, and the first chamber 10 or the second chamber 20 To supply the pressure regulating gas.

The pressure regulating gas supply unit 50 includes a first supply unit 51 for supplying the pressure regulating gas to the first chamber 10 side and a second supply unit 51 for supplying the pressure regulating gas to the second chamber 20 side 52). More specifically, the pressure regulating gas supply unit 50 includes a first supply unit 51 which is provided in the pumping duct 41 and is provided between the first exhaust port P1 and the common exhaust port P3, The second supply part 52 is provided in the pumping duct 41 and is provided between the second exhaust port P2 and the common exhaust port P3 to supply the pressure control gas to the second chamber 20, The pressure regulating gas can be supplied to the side of the pressure regulating valve.

Therefore, during the processing of the substrates S1 and S2, the pumping section 40 is connected to the first chamber 10 and the second chamber 20 through the pumping line 42 connected to the center of the pumping duct 41 The pressure regulating gas supply unit 50 is connected to the lower portion of the first process region A1 of the first chamber 10 through the first purge gas supply unit 51, The pressure regulating gas is supplied to the lower part of the second process area A2 of the second chamber 20 through the second purge gas supply part 52 so that the pressure difference between the first chamber 10 and the second chamber 20 Value can be easily compensated. At this time, the first pressure sensor 60 is installed in the first process area A1 of the first chamber 10 to measure the pressure in the first process area A1, and the second pressure sensor 70 measures the pressure in the first process area A1. The pressure in the second process area A2 can be measured by installing the second process area A2 in the second chamber 20.

The control unit (not shown) is electrically connected to the pressure regulating gas supply unit 50 to control the flow rate of the gas supplied to the first chamber 10 and the second chamber 20, which is generated by the deviation of the components of the first chamber 10 and the second chamber 20, The pressure regulating gas is supplied to the first chamber 10 side or the second chamber 20 side to compensate for the pressure difference value between the pressure measured by the pressure sensor 60 and the pressure measured by the second pressure sensor 70. [ The pressure regulating gas supply unit 50 can be controlled to supply the gas.

More specifically, the control unit controls the first supply unit 51 to supply the pressure regulating gas to the first chamber 10 side when the pressure in the first process area A1 is low, and the second process area A2 The pressure regulating gas can be supplied to the second chamber 20 side by controlling the second supply unit 52.

Therefore, when the pressure in the first process area A1 is low, the control unit can apply a control signal to the first supply unit 51 to open the first supply unit 51. [ The pressure regulating gas introduced into the internal space of the first chamber 10 except for the first process area A1 through the first supply part 51 is discharged to the outside of the first chamber 10, By stagnating the flow of gas, the pressure in the first process region A1 can be increased. Further, even when the pressure in the second processing region A2 is low, the pressure in the second processing region A2 can be increased by the same mechanism as the above-described method.

The control unit may set the basic pressure differential value between the first process zone A1 and the second process zone A2 by the hardware structure deviation of the first chamber 10 and the second chamber 20 before the process progresses, 1 pressure sensor 60 and the second pressure sensor 70 and controls the supply of the pressure regulating gas of the pressure regulating gas supply unit 50 based on the basic pressure difference value.

More specifically, the control unit calculates a difference between a first pressure measurement difference value, which is a first measured pressure measurement difference value between the first process area A1 and the second process area A2, Calculating the average value of the second pressure measurement difference, which is a pressure measurement difference value measured in a state where the process gas is supplied to the region A2, to calculate the basic pressure difference value, And the pressure regulating gas is supplied to the second chamber 20 side or the second chamber 20 side by the basic pressure difference value.

At this time, when the second pressure measurement difference value is calculated, the control unit controls the first chamber 10 and the second chamber 10 via the process gas supply unit 30 in a state where the pumping line 42 of the pumping unit 40 is maximally opened. The first process area A1 and the second process area A2 are formed by using the first pressure sensor 60 and the second pressure sensor 70 in a state in which a predetermined gas is sprayed to the second chamber 20 at a predetermined flow rate, ) Can be measured.

Accordingly, the control unit applies a control signal to the process gas supply unit 30 and the pumping unit 40 to calculate the basic pressure difference value, and controls the process gas supply unit 30 The first showerhead 14 and the second showerhead 24 can simultaneously spray the predetermined gas at the same pressure and flow rate. The predetermined gas injected through the first showerhead 14 and the second showerhead 24 passes through the first process area A1 or the second process area A2 and flows into the pumping part 40 ). ≪ / RTI >

In this state, the first pressure sensor 60 and the second pressure sensor 70 are used to calculate the second pressure measurement difference value of the first chamber 10 and the second chamber 20, The basic pressure difference value may be calculated by calculating an average of the first pressure measurement difference value measured first in the process. At this time, the control unit measures the pressure value of the first process area A1 and the pressure value of the second process area A2 at least once, and if the error of the basic pressure difference value calculated three times is within 10% The average value of the measured values is finally stored as the basic pressure difference value, and if the error is 10% or more, the measurement can be repeatedly repeated three times until the error is within 10%.

In this way, the calculated basic pressure difference value is stored in the control unit, and the control unit can control the basic pressure difference value so that the basic pressure difference value between the first process area A1 and the second process area A2 can be compensated A control signal can be appropriately applied to the pressure regulating gas supply unit 40 based on the stored basic pressure difference value.

In addition, the controller receives the pressure values of the first process area A1 and the second process area A2 from the first pressure sensor 60 and the second pressure sensor 70, When the pressure difference value is generated, the pressure regulating gas supply unit 50 can be controlled in real time to supply the pressure regulating gas to the first chamber 10 side or the second chamber 20 side.

For example, the control unit receives the pressure values of the first process area A1 and the second process area A2 from the first pressure sensor 60 and the second pressure sensor 70 in real time, The control unit applies a control signal to the pressure regulating gas supply unit 50 so that the pressure difference between the first supply unit 51 and the second supply unit 52 The pressure of the first process zone A1 or the second process zone A2 is increased by introducing the pressure regulating gas into the first chamber 10 side or the second chamber 20 side by opening the valve The pressure difference value can be compensated.

Therefore, the substrate processing apparatus 100 according to an embodiment of the present invention includes the pressure regulating gas supply unit 50 for supplying the pressure regulating gas to the process areas A1 and A2 of the chambers 10 and 20 The pressure of each of the process areas A1 and A2 of the chambers 10 and 20 can be controlled in the same manner by supplying the pressure regulating gas corresponding to the pressure difference value for each of the chambers 10 and 20. [

Also, when the pressure difference between the chambers 10 and 20 is compensated in real time during the process, the pressure sensors 60 and 70 of the chambers 10 and 20 provide the pressure measurement value And the pressure regulating gas supply unit 50 receives the control signal from the control unit and supplies the pressure regulating gas corresponding to the pressure difference value for each of the chambers 10 and 20 in real time, It is possible to control the pressures of all the chambers 10 and 20 included in the substrate processing apparatus 100 in real time even if an environmental change occurs in the chambers 10 and 20.

Accordingly, it is possible to control the deviation of each of the chambers 10 and 20 through the supply of the pressure control gas without changing the process parameters, so that the process environment of each of the chambers 10 and 20 can be kept the same, It is possible to have the effect of uniformly maintaining the quality of the substrate to be processed in each of the chambers 10, 20 by simultaneously forming or performing uniform etching.

2 is a cross-sectional view schematically showing a substrate processing apparatus 200 according to another embodiment of the present invention.

2, the pressure regulating gas supply unit 50 includes a first supply unit 51 and a pumping duct (not shown) installed at an end of the pumping duct 41 on the first chamber 10 side, And a second supply unit 52 installed at an end of the second chamber 20 on the side of the second chamber 20 for supplying the pressure control gas.

For example, during processing of the substrates S1 and S2, the pumping portion 40 is connected to the first chamber 10 and the second chamber 20 through a pumping line 42 connected to the center of the pumping duct 41 The pressure regulating gas supply unit 50 is connected to the pumping duct 41 of the pumping unit 41 through the first supply unit 51 and the second supply unit 52 It is possible to easily compensate the pressure difference value between the first chamber 10 and the second chamber 20 by supplying the pressure regulating gas to one side or the other side.

More specifically, when the pressure in the first process area A1 of the first chamber 10 is low, the control unit controls the first supply unit 51 to supply the pressure regulating gas to the first chamber 10 through the pumping duct 41, When the pressure in the second process zone A2 of the second chamber 20 is low, the second supply unit 52 is controlled to supply the pressure regulating gas to the second chamber 20 via the pumping duct 41, Can be supplied to the chamber 20 side.

Accordingly, when the pressure of the first chamber 10 is low, the control unit can apply a control signal to the first supply unit 51 to open the first supply unit 51. [ The pressure regulating gas introduced into one side of the pumping duct 41 through the first supply part 51 and into the internal space of the first chamber 10 except for the first processing area A1 flows into the first chamber 10 The pressure of the first processing region A1 can be increased by stagnating the flow of the residual gas to be exhausted to the outside of the first processing region A1. Further, even when the pressure of the second chamber 20 is low, the pressure in the second processing region A2 can be increased by the same mechanism as the above-described method.

Therefore, the substrate processing apparatus 200 according to another embodiment of the present invention includes the pressure regulating gas supply unit 50 for supplying the pressure regulating gas to the process areas A1 and A2 of the chambers 10 and 20 The pressure of each of the process areas A1 and A2 of the chambers 10 and 20 can be controlled in the same manner by supplying the pressure regulating gas corresponding to the pressure difference value for each of the chambers 10 and 20. [

Accordingly, it is possible to control the deviation of each of the chambers 10 and 20 through the supply of the pressure control gas without changing the process parameters, so that the process environment of each of the chambers 10 and 20 can be kept the same, It is possible to have the effect of uniformly maintaining the quality of the substrate to be processed in each of the chambers 10, 20 by simultaneously forming or performing uniform etching.

3 is a cross-sectional view schematically showing a substrate processing apparatus 300 according to another embodiment of the present invention.

As shown in FIG. 3, the process gas supply unit 30 can supply the process gas to the first showerhead 14 and the second showerhead 24, respectively.

More specifically, the process gas supply section 30 includes a first main line section 31-1 for supplying the process gas to the first showerhead 14 and a second main line section 31-1 for supplying the process gas to the first shower head 14 via the first main line section 31-1 A first flow control device 32-1 installed at one side of the first main line section 31-1 so as to control the flow rate of the process gas to be supplied, The second main line 31-2 and the second main line 31-2 are provided so as to control the flow rate of the process gas supplied through the second main line 31-2 and the second main line 31-2, And a second flow control device 32-2 installed at one side of the second flow control device 32-2.

Therefore, the process gas supply unit 30 includes separate main line units 31-1 and 31-2 and flow rate control units 32-1 and 32-2 for each of the chambers 10 and 20, So that the pressure and the flow rate of the process gas supplied to the chambers 10 and 20 can be controlled more precisely. The pressure and the flow rate of the process gas injected to the first showerhead 14 and the second showerhead 24 are more stably controlled so that the pressure regulating gas supply unit 50 is supplied to the first chamber 10 and / When the pressure difference value of the second chamber 20 is compensated, the pressure difference value can be more accurately compensated.

Therefore, it is possible to control the deviation of each of the chambers 10, 20 through the supply of the purge gas for pressure regulation without changing the process parameters so that the process environments of the chambers 10, It is possible to have an effect of uniformly maintaining the quality of the substrate to be processed.

While the present invention has been described with reference to exemplary embodiments, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the invention. Accordingly, the true scope of the present invention should be determined by the technical idea of the appended claims.

10: First chamber
20: Second chamber
30: Process gas supply section
40:
50: Pressure regulating gas supply part
60: first pressure sensor
70: Second pressure sensor
S1: first substrate
S2: second substrate
100, 200, 300: substrate processing apparatus

Claims (10)

A first chamber for treating the first substrate in a first process region between a first substrate support for supporting a first substrate and a first showerhead for injecting a process gas;
A second chamber for processing the second substrate in a second process region between a second substrate support for supporting a second substrate and a second showerhead for injecting the process gas;
A first pressure sensor installed in the first chamber and measuring a pressure of the first process area;
A second pressure sensor installed in the second chamber for measuring a pressure of the second process area;
A process gas supply unit connected to an upper portion of the first chamber and an upper portion of the second chamber to supply the process gas to the first showerhead and the second showerhead;
A pumping unit connected to a lower portion of the first chamber and a lower portion of the second chamber and capable of simultaneously pumping and discharging the residual gas discharged after the process in the first process region and the second process region;
A pressure regulating gas supply unit installed below the first process area and the second process area to supply a pressure regulating gas to the first chamber or the second chamber; And
Wherein the control unit controls the pressure control valve so as to supply the pressure control gas to the first chamber side or the second chamber side in order to compensate for a pressure difference value between the pressure measured by the first pressure sensor and the pressure measured by the second pressure sensor, A control unit for controlling the gas supply unit;
And the substrate processing apparatus. The method according to claim 1,
The pumping unit includes:
A pumping duct communicating with a first exhaust port at a lower portion of the first chamber and a second exhaust port at a lower portion of the second chamber and having a common exhaust port for simultaneously exhausting the first chamber and the second chamber; And
And a pumping line having one side connected to the pumping duct and the other side connected to a vacuum pump,
Wherein the pressure regulating gas supply unit includes:
A first supply unit for supplying the pressure regulating gas to the first chamber side; And
A second supply unit for supplying the pressure regulating gas to the second chamber side;
And the substrate processing apparatus. 3. The method of claim 2,
Wherein the pressure regulating gas supply unit includes:
Wherein the first supply part is provided below the first processing area of the first chamber to supply the pressure regulating gas to the first chamber side and the second supply part is installed below the second processing area of the second chamber And supplies the pressure regulating gas to the second chamber side. 3. The method of claim 2,
Wherein the pressure regulating gas supply unit includes:
Wherein the first supply part is provided in the pumping duct and is provided between the first exhaust port and the common exhaust port to supply the pressure regulating gas to the first chamber side, the second supply part is provided in the pumping duct, And is provided between the second exhaust port and the common exhaust port to supply the pressure regulating gas to the second chamber side. 3. The method of claim 2,
Wherein,
Wherein the control unit controls the first supply unit to supply the pressure control gas to the first chamber when the pressure of the first process area is low and controls the second supply unit when the pressure of the second process area is low, To the second chamber side. 6. The method of claim 5,
Wherein,
Wherein a difference between a first pressure value and a second pressure value in the first process area and the second process area due to hardware structure deviations of the first chamber and the second chamber before the process is preliminarily determined using the first pressure sensor and the second pressure sensor And controls supply of the pressure regulating gas of the pressure regulating gas supply unit based on the basic pressure difference value. The method according to claim 6,
Wherein,
A first pressure measurement difference value that is a difference between a first measured pressure measurement value of the first process area and the second process area and a second pressure measurement difference value that is a pressure measured in a state where the process gas is supplied to the first process area and the second process area Calculating a mean value of the second pressure measurement difference value as a measurement difference value to calculate the basic pressure difference value, and calculating the difference between the first pressure difference gas value and the second pressure difference value by the basic pressure difference value to the first chamber side or the second chamber side, To the substrate processing apparatus. 8. The method of claim 7,
Wherein,
Wherein, when calculating the second pressure difference value, a predetermined gas is sprayed to the first chamber and the second chamber at a predetermined flow rate through the process gas supply unit in a state where the pumping line of the pumping unit is maximally opened And measures the pressures in the first process area and the second process area using the first pressure sensor and the second pressure sensor. The method according to claim 1,
Wherein the process gas supply unit includes:
And distributes the process gas supplied through the main line portion to the first showerhead and the second showerhead through a distributor to supply the processed gas. The method according to claim 1,
Wherein the process gas supply unit includes:
And supplies the process gas to the first showerhead and the second showerhead, respectively.

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