KR20010081470A - 초크랄스키 결정성장 로의 고속인상용 핫존 구조 결정방법 - Google Patents
초크랄스키 결정성장 로의 고속인상용 핫존 구조 결정방법 Download PDFInfo
- Publication number
- KR20010081470A KR20010081470A KR1020000007075A KR20000007075A KR20010081470A KR 20010081470 A KR20010081470 A KR 20010081470A KR 1020000007075 A KR1020000007075 A KR 1020000007075A KR 20000007075 A KR20000007075 A KR 20000007075A KR 20010081470 A KR20010081470 A KR 20010081470A
- Authority
- KR
- South Korea
- Prior art keywords
- hot zone
- zone structure
- pulling speed
- silicon
- value
- Prior art date
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 51
- 238000000034 method Methods 0.000 title claims abstract description 28
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 46
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 46
- 239000010703 silicon Substances 0.000 claims abstract description 46
- 238000005094 computer simulation Methods 0.000 claims abstract description 8
- 238000012546 transfer Methods 0.000 claims description 4
- 238000002474 experimental method Methods 0.000 abstract description 7
- 230000005540 biological transmission Effects 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 230000000704 physical effect Effects 0.000 description 4
- 230000008023 solidification Effects 0.000 description 4
- 238000007711 solidification Methods 0.000 description 4
- 238000013461 design Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000012071 phase Substances 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (1)
- 초크랄스키 결정성장 로 내의 핫존 구조 및 인상속도를 정하고, 상기 정해진 핫존 구조 및 인상속도에 대해 결정성장 중의 열 전달 현상을 해석하는 전산모사를 수행하는 제 1 단계;상기 전산모사의 결과로부터 실리콘 용융액과 실리콘 잉곳의 계면 근처의 실리콘 잉곳 중심에서 축 방향 온도구배 Gc를 구한 후, V/Gc값을 구하는 제 2 단계;상기 인상속도 V를 변화시키면서 상기 제 1 단계 및 제 2 단계를 수행하여 V/Gc값을 구한 다음, 인상속도 V에 대한 V/Gc값의 그래프를 그리는 제 3 단계;상기 그래프에서 V/Gc값이 0.2㎟/minㆍK인 위치에 해당하는 인상속도를 최대 인상속도로 정하는 제 4 단계; 및핫존 구조를 변화시키고, 변화된 핫존 구조에 대해 상기 제 1 단계부터 상기 제 4 단계까지를 수행하여 상기 변화된 핫존 구조에 대한 최대 인상속도를 구하고, 가장 큰 최대 인상속도를 가지는 핫존 구조를 고속 인상에 가장 적합한 핫존 구조로 선택하는 제 5 단계를 포함하는 초크랄스키 결정성장 로의 고속인상용 핫존 구조 결정방법.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020000007075A KR100571570B1 (ko) | 2000-02-15 | 2000-02-15 | 초크랄스키 결정성장 로의 고속인상용 핫존 구조 결정방법 |
Applications Claiming Priority (1)
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---|---|---|---|
KR1020000007075A KR100571570B1 (ko) | 2000-02-15 | 2000-02-15 | 초크랄스키 결정성장 로의 고속인상용 핫존 구조 결정방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20010081470A true KR20010081470A (ko) | 2001-08-29 |
KR100571570B1 KR100571570B1 (ko) | 2006-04-14 |
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KR1020000007075A KR100571570B1 (ko) | 2000-02-15 | 2000-02-15 | 초크랄스키 결정성장 로의 고속인상용 핫존 구조 결정방법 |
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KR (1) | KR100571570B1 (ko) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20030050354A (ko) * | 2001-12-18 | 2003-06-25 | 주식회사 실트론 | 단결정 실리콘 잉곳 제조 방법 |
KR100426360B1 (ko) * | 2001-12-14 | 2004-04-08 | 주식회사 실트론 | 단결정 실리콘 잉곳 제조 방법 |
KR100488902B1 (ko) * | 2002-11-18 | 2005-05-11 | 주식회사 실트론 | 실리콘 단결정 잉곳의 구조 손실율 예측방법, 실리콘 단결정 잉곳 성장로의 제작방법 및 그에 의한 실리콘 단결정 잉곳의 제조방법. |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS529438B2 (ko) * | 1973-01-16 | 1977-03-16 | ||
WO1994016124A1 (fr) * | 1993-01-06 | 1994-07-21 | Nippon Steel Corporation | Procede et appareil pour prevoir la qualite du cristal d'un semi-conducteur monocristallin |
US6045610A (en) * | 1997-02-13 | 2000-04-04 | Samsung Electronics Co., Ltd. | Methods of manufacturing monocrystalline silicon ingots and wafers by controlling pull rate profiles in a hot zone furnance |
KR19980070037A (ko) * | 1997-02-13 | 1998-10-26 | 윤종용 | 반도체 잉곳 성장시 시드결정의 인상속도 최적화방법, 이를 적용한 반도체 잉곳 성장방법, 그에 따라 성장된 반도체 잉곳과반도체 웨이퍼 및 반도체장치 |
-
2000
- 2000-02-15 KR KR1020000007075A patent/KR100571570B1/ko active IP Right Grant
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100426360B1 (ko) * | 2001-12-14 | 2004-04-08 | 주식회사 실트론 | 단결정 실리콘 잉곳 제조 방법 |
KR20030050354A (ko) * | 2001-12-18 | 2003-06-25 | 주식회사 실트론 | 단결정 실리콘 잉곳 제조 방법 |
KR100488902B1 (ko) * | 2002-11-18 | 2005-05-11 | 주식회사 실트론 | 실리콘 단결정 잉곳의 구조 손실율 예측방법, 실리콘 단결정 잉곳 성장로의 제작방법 및 그에 의한 실리콘 단결정 잉곳의 제조방법. |
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