KR20010059292A - Fuse box - Google Patents

Abstract

PURPOSE: A fuse box is provided to improve the reliability of a device by connecting directly a fuse with an NRD metal line. CONSTITUTION: A multitude of cell(31) is arrayed toward one direction. A multitude of fuse(32,33) having a bar structure is arrayed toward a vertical direction to the cells(31) within the cells. The fuses(32,33) are used for repairing the cells(31). A multitude of NRD line(34,35) having a bar structure is formed between the cells(31). The NRD lines(34,35) are parallel to the cells(31). The NRD lines(34,35) are used as conductive layers of the fuses(32,33). The NRD lines(34,35) are connected directly with the fuses(32,33) in order to transfer a repair state.

Description

Fuse box

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a fuse box, and more particularly to a fuse box in which a fuse and an NRD metal line are directly connected to improve the reliability of the device.

As semiconductor devices are becoming highly integrated due to the development of general pattern forming technology, in the case of DRAM (Dynamic Random Access Memory (DRAM)) devices, the memory capacity is increased by four times. Is increased.

Therefore, since the rate of partial defects is increased, the yield of a complete chip having no defects in the manufactured chip is reduced, resulting in a decrease in productivity. Thus, an extra memory cell is formed in the chip, thereby causing defects during the manufacturing process. It is used interchangeably with cells to increase the yield of chips.

After completing the semiconductor device, the fuse box is opened to repair the defective circuit, and then the corresponding fuse is cut by using a laser.

In this situation, the repair method using the laser fuse blowing method has an etching problem in that the oxide film is removed from the fuse box and controlled to an oxide film thickness enough to break the fuse through the laser. Due to the oxide thickness change before the fuse box opening, which is inevitable for each wafer, changes in the oxide thickness remaining during the oxide etching process for opening the fuse box are a cause of deterioration in fuse blowing during repair.

FIG. 1 is a layout diagram illustrating a conventional fuse box, and FIG. 2 is a layout diagram illustrating damage to an internal connection portion of a conventional fuse box.

In the conventional fuse box, as shown in FIG. 1, two cells 11 are arranged in one direction and the lower cell repair fuse 12 and the upper cell repair formed of a polycrystalline silicon layer in the cells 11 are disposed. The fuses 13 are rod-shaped and are alternately arranged with the cell 11 in the vertical direction.

In addition, since the first and second fuses 12 and 13 and the contacts 14 are connected in a zigzag contact between the cells 11, two NRD metal lines 15 for transmitting a repair are provided in the rod-shaped cell ( 11) and in the horizontal direction.

Here, the moisture penetrates into the damaged area after the fuse cutting by the external laser, so that the internal connection part is damaged 20 as shown in FIG. 2.

However, the conventional fuse box is connected to the NRD metal line (Line) to check whether the repair is repaired and the fuse is contacted, the fuse box is damaged after the repair and fail (Fail) occurs in the Precision Cooking Test (PCT) At the connection between the fuse and the NRD metal line, there is a problem in that a failure occurs due to physical damage caused by stress of the external environment, so that resistance to the external environment is weak.

The present invention has been made to solve the above problems is to provide a fuse box that is directly connected to the fuse and the NRD metal line to improve the resistance to the external environment.

1 is a layout diagram showing a conventional fuse box

Figure 2 is a layout showing the damage of the internal connection of the conventional fuse box

3 is a layout diagram illustrating a fuse box according to an exemplary embodiment of the present invention.

4 is a layout diagram illustrating a fuse box according to a second exemplary embodiment of the present invention.

<Description of the symbols for the main parts of the drawings>

31: cell 32: first fuse

33: second fuse 34: first NRD metal line

35: second NRD metal line 41: third NRD metal line

42: fourth NRD metal line

The fuse box of the present invention has a plurality of cells arranged in one direction, a plurality of fuses arranged in a direction perpendicular to the cell as a rod structure in the cells, and a rod structure between the cells and a cell in a horizontal direction. Located in and characterized in that it comprises a NRD line that is directly connected to the fuse to the conductive layer of the fuse and delivers a repair.

When described in detail with reference to the accompanying drawings a preferred embodiment of the fuse box according to the present invention as follows.

3 is a layout diagram illustrating a fuse box according to a first embodiment of the present invention, and FIG. 4 is a layout diagram illustrating a fuse box according to a second embodiment of the present invention.

In the fuse box according to the first exemplary embodiment of the present invention, as shown in FIG. 3, two cells 31 are arranged in one direction, and are divided into left and right in the cells 31 and formed of a polycrystalline silicon layer. The first fuse 32 for repairing the cell 31 and the second fuse 33 for repairing the upper cell 31 are arranged in a vertical direction with the cell 31 in a rod structure.

The tungsten (W) silicide layer may be formed instead of the polycrystalline silicon layers of the first and second fuses 32 and 33.

First and second NRDs formed of polycrystalline silicon layers of the first and second fuses 32 and 33 between the cells 31 and directly connected to the first and second fuses 32 and 33, respectively. Lines 34 and 35 are rod-shaped and positioned horizontally with the cell 31.

In the fuse box according to the second exemplary embodiment of the present invention, as shown in FIG. 4, two cells 31 are arranged in one direction, and are divided into left and right in the cells 31 and formed of a polycrystalline silicon layer. The first fuse 32 for repairing the cell 31 and the second fuse 33 for repairing the upper cell 31 are arranged in a vertical direction with the cell 31 in a rod structure.

The tungsten (W) silicide layer may be formed instead of the polycrystalline silicon layers of the first and second fuses 32 and 33.

Third and third electrodes are formed between the cells 31 in a strapping structure using a metal having a lower resistance than that of the polycrystalline silicon layer, and are in contact with the first and second fuses 32 and 33, respectively. 4 NRD lines 41 and 42 are positioned horizontally with the cell 31.

At this time, even if the contacts used for the third and fourth NRD lines 41 and 42 of the strapping structure are damaged, only a slight resistance increases, and thus the operation of the integrated circuit is not a problem.

Since the fuse box of the present invention removes a contact portion such as a contact near the fuse box and directly connects the fuse and the NRD metal line, the fuse box and the NRD metal line have only a slight resistance even when the contact is damaged. Since it is connected to a non-affecting contact, the device is highly resistant to the external environment, especially the PCT test, thereby improving the reliability of the device.

Claims (2)

A plurality of cells arranged in one direction; A plurality of fuses disposed in the cells in a bar structure and arranged in a direction perpendicular to the cell; And a NRD line positioned in a horizontal direction with the cell as the rod structure between the cells and directly connected to the fuse as a conductive layer of the fuse to transmit a repair. A plurality of cells arranged in one direction; A plurality of fuses disposed in the cells in a bar structure and arranged in a direction perpendicular to the cell; And a NRD line positioned in a horizontal direction with the cell between the cells and connected to the fuse by a strapping structure using a metal layer to transmit a repair.