KR20010055814A - Wafer chuck to prevent pollution for exposure equipment - Google Patents

Wafer chuck to prevent pollution for exposure equipment Download PDF

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Publication number
KR20010055814A
KR20010055814A KR1019990057124A KR19990057124A KR20010055814A KR 20010055814 A KR20010055814 A KR 20010055814A KR 1019990057124 A KR1019990057124 A KR 1019990057124A KR 19990057124 A KR19990057124 A KR 19990057124A KR 20010055814 A KR20010055814 A KR 20010055814A
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KR
South Korea
Prior art keywords
support element
suction
wafer
wafer chuck
adsorption
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Application number
KR1019990057124A
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Korean (ko)
Inventor
서광남
Original Assignee
박종섭
주식회사 하이닉스반도체
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Priority to KR1019990057124A priority Critical patent/KR20010055814A/en
Publication of KR20010055814A publication Critical patent/KR20010055814A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE: A wafer chuck is provided to completely remove foreign particles via a vacuum adsorption hole formed on the top of an inner surface of a circular tube shape body by alternately getting on and off an adsorption support element and a separation support element. CONSTITUTION: A wafer chuck includes a circular tube shape body(10) having an adsorption room, a plurality of adsorption holes(12) on an upper side of an inner surface and an exhaust hole. A wafer adsorption support element(20) is inserted into the body(10) and has a coupling groove(21) of a comb shape and a plurality of adsorption holes(22). A separation support element(30) of a comb shape is inserted into the coupling groove(21) of the wafer adsorption support element(20). The first elevating driving means elevates the wafer adsorption support element(20). The second elevating driving means elevates the separation support element(30).

Description

반도체 노광장치의 오염방지용 웨이퍼척{WAFER CHUCK TO PREVENT POLLUTION FOR EXPOSURE EQUIPMENT}Wafer chuck for preventing contamination of semiconductor exposure equipment {WAFER CHUCK TO PREVENT POLLUTION FOR EXPOSURE EQUIPMENT}

본 발명은 반도체 노광장치의 오염방지용 웨이퍼척에 관한 것으로, 특히 웨이퍼를 척킹하는 흡착지지요소와 분리지지요소를 교대로 승강시켜 원관형 본체의 내주면 상측부에 형성된 진공 흡착공을 통하여 이물질 입자를 완벽하게 제거할 수 있도록 한 반도체 노광장치의 오염방지용 웨이퍼척에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wafer chuck for preventing contamination of a semiconductor exposure apparatus, and in particular, the adsorption support element and the separation support element that chuck the wafer are alternately lifted to perfect foreign particles through vacuum suction holes formed on the inner circumferential surface of the cylindrical body. It relates to a wafer chuck for preventing contamination of a semiconductor exposure apparatus that can be removed easily.

일반적으로, 반도체 제조를 위한 노광공정를 행함에 있어서는 웨이퍼를 이송장치의 암으로 이송하여 노광설비의 웨이퍼 척 위에 진공으로 흡입하여 척킹하고 정렬한 후, 노광을 행하게 된다.In general, in the exposure process for semiconductor manufacturing, the wafer is transferred to the arm of the transfer apparatus, sucked with vacuum on the wafer chuck of the exposure equipment, chucked and aligned, and then exposed.

이와 같이 웨이퍼를 척킹하는 종래의 웨이퍼 척은 작업을 진행함에 따라 이물질 입자가 누적되어 노광공정의 불량을 유발하게 되는 문제점이 있었다.As described above, the conventional wafer chuck that chucks the wafer has a problem that foreign matter particles accumulate as the work progresses, causing a defect in the exposure process.

본 발명은 이와 같은 종래의 문제점 및 결함을 해소하기 위하여 창안한 것으로, 웨이퍼를 척킹하는 흡착지지요소와 분리지지요소를 교대로 승강시켜 원관형 본체의 내주면 상측부에 형성된 진공 흡착공을 통하여 이물질 입자를 완벽하게 제거할 수 있게 되는 반도체 노광장치의 오염방지용 웨이퍼척을 제공하기 위한 것이다.The present invention has been devised to solve such a conventional problem and defect, and the foreign matter particles through the vacuum adsorption hole formed on the inner circumferential surface of the tubular body by alternately raising and lowering the adsorption support element and the separation support element chucking the wafer. To provide a wafer chuck for preventing contamination of a semiconductor exposure apparatus that can be removed completely.

도 1 내지 도 4는 본 발명에 의한 반도체 노광장치의 오염방지용 웨이퍼척을 보인 도면으로서,1 to 4 is a view showing a wafer chuck for preventing contamination of a semiconductor exposure apparatus according to the present invention,

도 1은 평면도.1 is a plan view.

도 2는 도 1의 A-A선 단면도.2 is a cross-sectional view taken along the line A-A of FIG.

도 3은 도 1의 B-B선 단면도.3 is a cross-sectional view taken along the line B-B in FIG.

도 4는 사시도.4 is a perspective view.

< 도면의 주요부분에 대한 부호의 설명><Description of the reference numerals for the main parts of the drawings>

1 : 베이스 플레이트 10 : 원관형 본체1 base plate 10 cylindrical body

11 : 흡입실 12 : 흡입공11: suction chamber 12: suction hole

13 : 배출구 20 : 흡착지지요소13 outlet 20 20 adsorption support element

21 : 결합홈 22 : 흡입공21: coupling groove 22: suction hole

23 : 흡입실 24 : 흡입실 형성판23: suction chamber 24: suction chamber forming plate

25 : 배출구 30 : 분리지지요소25 outlet 30 separate support element

40 : 제1 승강구동수단 41 : 실린더40: first lift drive means 41: cylinder

42 : 피스톤 로드 43 : 연결판42: piston rod 43: connecting plate

50 : 제2 승강구동수단 51 : 실린더50: second lift driving means 51: cylinder

52 : 피스톤 로드52: piston rod

이와 같은 목적을 달성하기 위하여 본 발명에 의한 반도체 노광장치의 오염방지용 웨이퍼척은 이중주벽으로 형성되어 흡입실이 구비되고 내주면 상측부에 다수개의 흡입공이 형성되며 배출구가 구비된 원관형 본체와, 상기 원관형 본체의 내측에 승강 가능하게 삽입되고 빗형상의 결합홈이 형성됨과 아울러 다수개의 흡입공이 형성된 웨이퍼 흡착지지요소와, 빗형상으로 형성되고 상기 웨이퍼 흡착요소의 결합홈에 승강가능하게 삽입되는 분리지지요소와, 상기 흡착지지요소를 승강작동시키는 제1 승강구동수단과, 상기 분리지지요소를 승강작동시키는 제2 승강구동수단을 포함하여 구성된다.In order to achieve the above object, the anti-pollution wafer chuck of the semiconductor exposure apparatus according to the present invention has a double main wall, which is provided with a suction chamber, a plurality of suction holes are formed in an upper side of the inner circumferential surface thereof, and a cylindrical main body having an outlet. Separation is inserted into the inner side of the cylindrical body to be lifted and formed in the comb-shaped coupling groove, and the suction suction support element formed with a plurality of suction holes, and formed in the comb shape and is inserted into the coupling groove of the wafer suction element. And a support element, first lift drive means for lifting and lowering the suction support element, and second lift drive means for lifting and lowering the separate support element.

예컨데, 상기 제2 승강구동수단은 흡착지지요소의 중앙부에 실린더가 결합되고, 분리지지요소의 하면 중앙부에 피스톤 로드가 결합된 구성되며, 상기 제1 승강구동수단은 베이스 플레이트에 실린더가 결합되고, 피스톤 로드의 상단부가 흡착지지요소의 하면에 연결판을 개재하고 고정된 구성된다.For example, the second lift drive means is a cylinder coupled to the center portion of the suction support element, the piston rod is configured to be coupled to the center of the lower surface of the separation support element, the first lift drive means is a cylinder coupled to the base plate, The upper end of the piston rod is fixed to the lower surface of the suction support element via a connecting plate.

상기 흡착지지요소의 하부에는 흡입실 형성판이 고정되어 상기 다수개의 흡입공과 연통되는 흡입실이 형성되고, 상기 흡입실 형성판에는 배출구가 형성된다. 그리고,상기 원관형 본체에 형성되는 흡입공은 상기 흡착지지요소의 빗형상 결합홈이 있는 영역에서 이물질 입자을 흡입할 수 있도록 상기 원관형 본체의 내주면 상측부에 일정각 범위에서 부분적으로 형성되어 구성된다.A suction chamber forming plate is fixed to the lower portion of the suction support element to form a suction chamber communicating with the plurality of suction holes, and a discharge port is formed in the suction chamber forming plate. And, the suction hole formed in the tubular body is formed in a predetermined angle range in the upper portion on the inner circumferential surface of the tubular body to suck the foreign matter particles in the region with the comb-shaped coupling groove of the suction support element. .

이하, 이와 같은 본 발명의 실시예를 첨부 도면에 의하여 상세히 설명하면 다음과 같다.Hereinafter, the embodiments of the present invention will be described in detail with reference to the accompanying drawings.

도 1 내지 도 4는 본 발명에 의한 반도체 노광장치의 오염방지용 웨이퍼척을 보인 도면으로서, 도 1에는 평면도가 도시되고, 도 2에는 도 1의 A-A선 단면도, 도 3에는 도 1의 B-B선 단면도가 각각 도시되어 있으며, 도 4에는 사시도가 도시되어있다.1 to 4 are views showing a wafer chuck for preventing contamination of a semiconductor exposure apparatus according to the present invention, in which FIG. 1 is a plan view, FIG. 2 is a sectional view taken along line AA of FIG. 1, and FIG. 3 is a sectional view taken along line BB of FIG. Are respectively shown, and a perspective view is shown in FIG.

그리고, 도면에서 부호 10은 원관형 본체, 20은 웨이퍼(W)를 척킹하는 흡착지지요소, 30은 상기 흡착지지요소(20)와 상대적으로 승강하면서 웨이퍼를 지지하는 분리지지요소를 보인 것이다.In the drawing, reference numeral 10 denotes a tubular body, 20 denotes a suction support element for chucking the wafer W, and 30 denotes a separate support element that supports the wafer while being elevated relative to the suction support element 20.

또한, 부호 22는 상기 흡착지지요소(20)에 형성되어 웨이퍼(W)를 진공으로 흡입하기 위한 흡입공을 보인 것이고, 12는 상기 원관형 본체(10)의 내주면에 형성되어 이물질 입자를 흡입하여 제거하기 위한 청소용 흡입공(cleaning hole)을 보인 것이다.In addition, reference numeral 22 denotes a suction hole formed in the suction support element 20 to suck the wafer W into a vacuum, and 12 denotes a suction hole formed in the inner circumferential surface of the tubular body 10 to suck foreign matter particles. It shows a cleaning hole for removal.

이에 도시한 바와 같이, 본 고안에 의한 반도체 노광장치의 오염방지용 웨이퍼척은 이중주벽으로 형성되어 흡입실(11)이 구비되고 내주면 상측부에 다수개의 흡입공(12)이 형성되며 배출구(13)가 구비된 원관형 본체(10)와, 상기 원관형 본체(10)의 내측에 승강 가능하게 삽입되고 빗형상의 결합홈(21)이 형성됨과 아울러 다수개의 흡입공(22)이 형성된 웨이퍼 흡착지지요소(20)와, 빗형상으로 형성되고 웨이퍼 흡착요소(20)의 결합홈(21)에 승강가능하게 삽입되는 분리지지요소(30)와, 상기 흡착지지요소(20)를 승강작동시키는 제1 승강구동수단(40)과, 상기 분리지지요소(30)를 승강작동시키는 제2 승강구동수단(50)으로 구성되어 있다.As shown in the drawing, the wafer chuck for preventing contamination of the semiconductor exposure apparatus according to the present invention is formed of a double circumferential wall so that the suction chamber 11 is provided, and a plurality of suction holes 12 are formed in the upper side of the inner circumferential surface. And a tubular body 10 provided with a wafer adsorbable support which is inserted into the inner side of the cylindrical body 10 to be elevated, and has a comb-shaped coupling groove 21 and a plurality of suction holes 22 formed therein. An element 20, a separation support element 30 formed in a comb shape and inserted into an engaging groove 21 of the wafer adsorption element 20 in a liftable manner, and a first operation of lifting and lowering the adsorption support element 20. The elevating drive means 40 and the second elevating drive means 50 for elevating and operating the separating support element 30.

상기 제2 승강구동수단(50)은 흡착지지요소(20)의 중앙부에 실린더(51)가 결합되고, 분리지지요소(30)의 하면 중앙부에 피스톤 로드(52)가 결합된 구성으로 되어 있다.The second elevating driving means 50 has a structure in which a cylinder 51 is coupled to a central portion of the suction support element 20, and a piston rod 52 is coupled to a central portion of the lower surface of the separation support element 30.

상기 제1 승강구동수단(40)은 베이스 플레이트(1)에 실린더(41)가 결합되고,피스톤 로드(42)의 상단부가 흡착지지요소(20)의 하면에 연결판(43)을 개재하고 고정된 구성으로 되어 있다.The first lift drive means 40 is a cylinder 41 is coupled to the base plate 1, the upper end of the piston rod 42 is fixed to the lower surface of the adsorption support element 20 via the connecting plate 43 It is made up of.

상기 흡착지지요소(20)의 하부에는 흡입실 형성판(24)이 고정되어 상기 다수개의 흡입공(22)과 연통되는 흡입실(23)이 형성되고, 상기 흡입실 형성판(24)에는 배출구(25)가 형성되어 있다.The suction chamber forming plate 24 is fixed to the lower portion of the suction support element 20 to form a suction chamber 23 communicating with the plurality of suction holes 22, and the suction chamber forming plate 24 has an outlet port. 25 is formed.

상기 원관형 본체(10)에 형성되는 흡입공(12)은 상기 흡착지지요소(20)의 빗형상 결합홈(21)이 있는 영역에서 이물질 입자을 흡입할 수 있도록 부분적으로 형성하는 것이 바람직하다.The suction hole 12 formed in the cylindrical main body 10 is preferably partially formed to suck the foreign matter particles in the region having the comb-shaped coupling groove 21 of the suction support element 20.

이하, 본 발명에 의한 반도체 노광장치의 오염방지용 웨이퍼척의 작용을 설명하면 다음과 같다.Hereinafter, the operation of the anti-pollution wafer chuck of the semiconductor exposure apparatus according to the present invention will be described.

도 1내지 도 3과 같은 본 발명의 웨이퍼 척에 이송장치의 암으로 웨이퍼(W)를 이송하여 올려 놓고, 흡착지지요소(20)의 흡입공(22)을 통하여 진공 흡입을 하게 되면 웨이퍼가 흡착지지요소(20)와 분리지지요소(30)의 위에 흡착되어 안정하게 유지되며, 이와 같이 웨이퍼(W)가 흡착 고정된 후, 노광공정을 행하게 된다.When the wafer W is transferred to the wafer chuck arm of the present invention as shown in FIGS. 1 to 3 and placed on the arm of the transfer device, the vacuum is sucked through the suction hole 22 of the suction support element 20. It is adsorbed on the support element 20 and the separated support element 30, and is held stably. After the wafer W is adsorbed and fixed in this manner, an exposure process is performed.

노광공정이 완료되면 웨이퍼 척으로 부터 웨이퍼(W)를 언로딩시키고, 이후 제2 승강구동수단(50)의 실린더(51)를 작동시켜 웨이퍼 척의 분리지지요소(30)를 하강시키면 원관형 본체(10)의 내주면에 형성된 흡입공(12)이 부분적으로 개방되며, 이때 원관형 본체(10)의 배출구(13)를 통하여 진공 흡입하면 흡착지지요소(20)에 부착되어 있던 이물질 입자가 원관형 본체(10)의 흡입공(12)을 통하여 흡입되어 제거된다.When the exposure process is completed, the wafer W is unloaded from the wafer chuck, and then the cylinder 51 of the second lift driving means 50 is operated to lower the separation support element 30 of the wafer chuck. The suction hole 12 formed in the inner circumferential surface of 10) is partially opened, and when the vacuum suction is carried out through the outlet 13 of the cylindrical body 10, foreign matter particles attached to the adsorption support element 20 become the cylindrical body. Suction is removed through the suction hole 12 of (10).

이어서, 분리지지요소(30)를 다시 상승시키고, 제1 승강구동수단(40)을 작동시켜 흡착지지요소(20)를 하강시키면 원관형 본체(10)의 흡입공(12)이 다시 부분적으로 개방되며, 이때 원관형 본체(10)의 배출구(13)를 통하여 진공 흡입하면 분리지지요소(30)에 부착되어 있던 이물질 입자가 원관형 본체(10)의 흡입공(12)을 통하여 제거된다.Subsequently, when the separation support element 30 is raised again and the first lifting drive means 40 is operated to lower the suction support element 20, the suction hole 12 of the tubular body 10 partially opens again. At this time, when the vacuum suction through the outlet 13 of the cylindrical body 10, foreign matter particles attached to the separation support element 30 is removed through the suction hole 12 of the cylindrical body 10.

이와 같이 하여 흡착지지요소(20)와 분리지지요소(30)에 부착되어 있던 이물질 입자가 제거되면 흡착지지요소(20)를 다시 상승시키고 웨이퍼(W)를 이송시켜 다시 척킹하여 정렬시킨 후, 노광작업을 행하게 된다.In this way, when the foreign matter particles attached to the adsorption support element 20 and the separation support element 30 are removed, the adsorption support element 20 is raised again, the wafer W is transported, chucked and aligned, and then exposed. Will do the work.

그리고, 상기와 같은 이물질 입자 제거작업은 웨이퍼(W)를 언로딩하고 다시 로딩시킬 때 까지의 시간에 행하는 것이 바람직 하다.In addition, the foreign matter particle removal operation as described above is preferably performed in a time until the unloading and reloading the wafer (W).

그외 다른 구성 및 작용은 통상의 노광용 웨이퍼 척킹장치와 같다.Other configurations and operations are the same as those of a conventional wafer chucking device for exposure.

이상에서 설명한 바와 같은 본 발명 장치는 웨이퍼(W)를 척킹하는 흡착지지요소(20)와 분리지지요소(30)를 교대로 승강시켜 이물질을 제거하도록 되어 있으므로 이물질 입자를 완벽하게 제거할 수 있으며, 이와 같이 이물질을 제거한 후 노광을 행하므로 이물질 입자에 의한 노광 불량을 방지할 수 있다. 그리고 이물질 입자 제거(particle cleaning)는 웨이퍼를 언로딩한 후, 다시 로딩될 때 까지의 시간에 실시되므로 작업시간 손실은 발생되지 않는다.As described above, the apparatus of the present invention is configured to remove foreign matters by alternately lifting the adsorption support element 20 and the separation support element 30 that chuck the wafer W, thereby completely removing foreign matter particles. Thus, since exposure is performed after removing a foreign material, the exposure defect by a foreign material particle can be prevented. And since particle cleaning is performed in a time from unloading the wafer to reloading, no time loss occurs.

Claims (5)

이중주벽으로 형성되어 흡입실이 구비되고 내주면 상측부에 다수개의 흡입공이 형성되며 배출구가 구비된 원관형 본체와, 상기 원관형 본체의 내측에 승강 가능하게 삽입되고 빗형상의 결합홈이 형성됨과 아울러 다수개의 흡입공이 형성된 웨이퍼 흡착지지요소와, 빗형상으로 형성되고 상기 웨이퍼 흡착요소의 결합홈에 승강가능하게 삽입되는 분리지지요소와, 상기 흡착지지요소를 승강작동시키는 제1 승강구동수단과, 상기 분리지지요소를 승강작동시키는 제2 승강구동수단을 포함하여 구성된 것을 특징으로 하는 반도체 노광장치의 오염방지용 웨이퍼척.It is formed of a double circumferential wall is provided with a suction chamber, a plurality of suction holes are formed in the upper side of the inner circumferential surface and a cylindrical body having a discharge port, and is inserted into the inner side of the cylindrical body so as to be elevated, and comb-shaped coupling grooves A wafer suction support element having a plurality of suction holes, a separation support element formed in a comb shape and inserted into a coupling groove of the wafer suction element, the first lift drive means for lifting and lowering the suction support element, and And a second lift driving means for lifting and lowering the separation support element. 제 1 항에 있어서, 상기 제2 승강구동수단은 흡착지지요소의 중앙부에 실린더가 결합되고, 분리지지요소의 하면 중앙부에 피스톤 로드가 결합된 구성된 것을 특징으로 하는 반도체 노광장치의 오염방지용 웨이퍼척.2. The wafer chuck of claim 1, wherein the second lifting and lowering driving means comprises a cylinder coupled to the center of the suction support element, and a piston rod coupled to the center of the lower surface of the separation support element. 제 2 항에 있어서, 상기 제1 승강구동수단은 베이스 플레이트에 실린더가 결합되고, 피스톤 로드의 상단부가 흡착지지요소의 하면에 연결판을 개재하고 고정된 구성된 것을 특징으로 하는 반도체 노광장치의 오염방지용 웨이퍼척.The method of claim 2, wherein the first lift drive means is a cylinder coupled to the base plate, the upper end of the piston rod is fixed to the lower surface of the adsorption support element via a connecting plate is fixed to prevent contamination of the semiconductor exposure apparatus. Wafer chuck. 제 1 항에 있어서, 상기 흡착지지요소의 하부에는 흡입실 형성판이 고정되어 상기 다수개의 흡입공과 연통되는 흡입실이 형성되고, 상기 흡입실 형성판에는 배출구가 형성되어 구성된 것을 특징으로 하는 반도체 노광장치의 오염방지용 웨이퍼척.2. The semiconductor exposure apparatus according to claim 1, wherein a suction chamber forming plate is fixed to a lower portion of the suction support element to form a suction chamber communicating with the plurality of suction holes, and a discharge port is formed in the suction chamber forming plate. Anti-pollution wafer chuck. 제 1 항에 있어서, 상기 원관형 본체에 형성되는 흡입공은 상기 흡착지지요소의 빗형상 결합홈이 있는 영역에서 이물질 입자을 흡입할 수 있도록 상기 원관형 본체의 내주면 상측부에 일정각 범위에서 부분적으로 형성되어 구성된 것을 특징으로 하는 반도체 노광장치의 오염방지용 웨이퍼척.According to claim 1, wherein the suction hole formed in the tubular body is partially at an angle range above the inner circumferential surface of the cylindrical body so as to suck the foreign matter particles in the region with the comb-shaped coupling groove of the suction support element. A contamination prevention wafer chuck of a semiconductor exposure apparatus, characterized in that formed.
KR1019990057124A 1999-12-13 1999-12-13 Wafer chuck to prevent pollution for exposure equipment KR20010055814A (en)

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