KR20010051930A - 종말점 검출용의 최적화된 광학 시스템 - Google Patents

종말점 검출용의 최적화된 광학 시스템 Download PDF

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Publication number
KR20010051930A
KR20010051930A KR1020000070306A KR20000070306A KR20010051930A KR 20010051930 A KR20010051930 A KR 20010051930A KR 1020000070306 A KR1020000070306 A KR 1020000070306A KR 20000070306 A KR20000070306 A KR 20000070306A KR 20010051930 A KR20010051930 A KR 20010051930A
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KR
South Korea
Prior art keywords
wafer
wafer processing
coating
light
viewing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020000070306A
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English (en)
Korean (ko)
Inventor
제이노스앨런찰스
카도소안드레길
리처드슨다니엘브라이언
Original Assignee
브라이언 알. 바흐맨
액셀리스 테크놀로지스, 인크.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 브라이언 알. 바흐맨, 액셀리스 테크놀로지스, 인크. filed Critical 브라이언 알. 바흐맨
Publication of KR20010051930A publication Critical patent/KR20010051930A/ko
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/10—Methods of surface bonding and/or assembly therefor
    • Y10T156/1052—Methods of surface bonding and/or assembly therefor with cutting, punching, tearing or severing

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
KR1020000070306A 1999-11-24 2000-11-24 종말점 검출용의 최적화된 광학 시스템 Ceased KR20010051930A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/449,338 US6547458B1 (en) 1999-11-24 1999-11-24 Optimized optical system design for endpoint detection
US9/449,338 1999-11-24

Publications (1)

Publication Number Publication Date
KR20010051930A true KR20010051930A (ko) 2001-06-25

Family

ID=23783782

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020000070306A Ceased KR20010051930A (ko) 1999-11-24 2000-11-24 종말점 검출용의 최적화된 광학 시스템

Country Status (5)

Country Link
US (1) US6547458B1 (https=)
EP (1) EP1104018A3 (https=)
JP (1) JP4725873B2 (https=)
KR (1) KR20010051930A (https=)
TW (1) TW483081B (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
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KR100549955B1 (ko) * 2004-07-20 2006-02-07 삼성전자주식회사 반도체 제조 설비의 식각종말점 검출장치

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US6585908B2 (en) * 2001-07-13 2003-07-01 Axcelis Technologies, Inc. Shallow angle interference process and apparatus for determining real-time etching rate
US20030215962A1 (en) * 2002-05-14 2003-11-20 Applied Materials, Inc. Integration of multiple processes within a single chamber
US6863772B2 (en) * 2002-10-09 2005-03-08 Taiwan Semiconductor Manufacturing Co., Ltd Dual-port end point window for plasma etcher
US7892357B2 (en) * 2004-01-12 2011-02-22 Axcelis Technologies, Inc. Gas distribution plate assembly for plasma reactors
US7821655B2 (en) * 2004-02-09 2010-10-26 Axcelis Technologies, Inc. In-situ absolute measurement process and apparatus for film thickness, film removal rate, and removal endpoint prediction
US7120553B2 (en) * 2004-07-22 2006-10-10 Applied Materials, Inc. Iso-reflectance wavelengths
US7479191B1 (en) 2005-04-22 2009-01-20 Novellus Systems, Inc. Method for endpointing CVD chamber cleans following ultra low-k film treatments
KR100688980B1 (ko) * 2005-07-01 2007-03-08 삼성전자주식회사 플라즈마 모니터링장치와 플라즈마 모니터링 방법
US8262800B1 (en) 2008-02-12 2012-09-11 Novellus Systems, Inc. Methods and apparatus for cleaning deposition reactors
US20110083721A1 (en) * 2008-11-20 2011-04-14 Behzad Imani Concentrating photovoltaic system
US8591659B1 (en) 2009-01-16 2013-11-26 Novellus Systems, Inc. Plasma clean method for deposition chamber
US9111729B2 (en) * 2009-12-03 2015-08-18 Lam Research Corporation Small plasma chamber systems and methods
JP2012141291A (ja) * 2010-12-16 2012-07-26 Fujifilm Corp 放射線撮影装置
KR102396143B1 (ko) 2018-02-09 2022-05-09 삼성전자주식회사 Oes 장치와 이를 포함하는 플라즈마 처리 장치, 및 반도체 장치의 제조 방법

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US4341592A (en) 1975-08-04 1982-07-27 Texas Instruments Incorporated Method for removing photoresist layer from substrate by ozone treatment
US4201579A (en) 1978-06-05 1980-05-06 Motorola, Inc. Method for removing photoresist by hydrogen plasma
US4394237A (en) * 1981-07-17 1983-07-19 Bell Telephone Laboratories, Incorporated Spectroscopic monitoring of gas-solid processes
US4491499A (en) 1984-03-29 1985-01-01 At&T Technologies, Inc. Optical emission end point detector
US4695700A (en) 1984-10-22 1987-09-22 Texas Instruments Incorporated Dual detector system for determining endpoint of plasma etch process
US4675072A (en) * 1986-06-25 1987-06-23 International Business Machines Corporation Trench etch endpoint detection by LIF
JPH0777211B2 (ja) 1987-08-19 1995-08-16 富士通株式会社 アッシング方法
US4859277A (en) * 1988-05-03 1989-08-22 Texas Instruments Incorporated Method for measuring plasma properties in semiconductor processing
JP2606923B2 (ja) * 1989-05-29 1997-05-07 松下電子工業株式会社 ドライエッチング方法およびその装置
US5097430A (en) * 1990-01-16 1992-03-17 Applied Materials, Inc. Method and apparatus for displaying process end point signal based on emission concentration within a processing chamber
JP2936501B2 (ja) * 1992-01-29 1999-08-23 東京エレクトロン株式会社 プラズマ処理装置及びこのクリーニング方法
US5841651A (en) * 1992-11-09 1998-11-24 The United States Of America As Represented By The United States Department Of Energy Closed loop adaptive control of spectrum-producing step using neural networks
US5728253A (en) 1993-03-04 1998-03-17 Tokyo Electron Limited Method and devices for detecting the end point of plasma process
TW260857B (https=) 1993-03-04 1995-10-21 Tokyo Electron Co Ltd
US5498308A (en) 1994-02-25 1996-03-12 Fusion Systems Corp. Plasma asher with microwave trap
JPH08106992A (ja) * 1994-03-24 1996-04-23 Hitachi Ltd プラズマ処理方法およびその装置
US5733820A (en) * 1995-04-27 1998-03-31 Sharp Kabushiki Kaisha Dry etching method
JP3258852B2 (ja) * 1995-04-27 2002-02-18 シャープ株式会社 ドライエッチング装置の異常検出方法
US5824604A (en) 1996-01-23 1998-10-20 Mattson Technology, Inc. Hydrocarbon-enhanced dry stripping of photoresist
US5961851A (en) 1996-04-02 1999-10-05 Fusion Systems Corporation Microwave plasma discharge device
US5908319A (en) 1996-04-24 1999-06-01 Ulvac Technologies, Inc. Cleaning and stripping of photoresist from surfaces of semiconductor wafers
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US5846373A (en) 1996-06-28 1998-12-08 Lam Research Corporation Method for monitoring process endpoints in a plasma chamber and a process monitoring arrangement in a plasma chamber
US5770523A (en) 1996-09-09 1998-06-23 Taiwan Semiconductor Manufacturing Company, Ltd. Method for removal of photoresist residue after dry metal etch
US5943130A (en) * 1996-10-21 1999-08-24 Insitec, Inc. In situ sensor for near wafer particle monitoring in semiconductor device manufacturing equipment
US5940175A (en) * 1996-11-01 1999-08-17 Msp Corporation Method and apparatus for surface inspection in a chamber
EP0841692A3 (en) * 1996-11-08 1998-12-23 Matsushita Electric Industrial Co., Ltd. Apparatus and method for optical evaluation of a semiconductor device
US5694207A (en) 1996-12-09 1997-12-02 Taiwan Semiconductor Manufacturing Company, Ltd. Etch rate monitoring by optical emission spectroscopy
US5956148A (en) * 1996-12-20 1999-09-21 Texas Instruments Incorporated Semiconductor surface measurement system and method
FR2760085B1 (fr) * 1997-02-26 1999-05-14 Instruments Sa Dispositif et procede de mesures tridimensionnelles et d'observation in situ d'une couche superficielle deposee sur un empilement de couches minces
JPH10294305A (ja) * 1997-04-18 1998-11-04 Hitachi Ltd 半導体製造方法及び装置
JPH10335307A (ja) * 1997-05-27 1998-12-18 Hitachi Ltd 加工プロセスの終点検出方法およびそれを用いた装置
US5877407A (en) 1997-07-22 1999-03-02 Lucent Technologies Inc. Plasma etch end point detection process
US6536449B1 (en) 1997-11-17 2003-03-25 Mattson Technology Inc. Downstream surface cleaning process

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100549955B1 (ko) * 2004-07-20 2006-02-07 삼성전자주식회사 반도체 제조 설비의 식각종말점 검출장치

Also Published As

Publication number Publication date
TW483081B (en) 2002-04-11
JP4725873B2 (ja) 2011-07-13
EP1104018A2 (en) 2001-05-30
EP1104018A3 (en) 2004-05-19
US6547458B1 (en) 2003-04-15
JP2001210629A (ja) 2001-08-03

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