KR20010018699A - Wafer high and low regulator of wafer manufaturing bake - Google Patents

Wafer high and low regulator of wafer manufaturing bake Download PDF

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Publication number
KR20010018699A
KR20010018699A KR1019990034759A KR19990034759A KR20010018699A KR 20010018699 A KR20010018699 A KR 20010018699A KR 1019990034759 A KR1019990034759 A KR 1019990034759A KR 19990034759 A KR19990034759 A KR 19990034759A KR 20010018699 A KR20010018699 A KR 20010018699A
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South Korea
Prior art keywords
wafer
heating plate
bake
circumferential surface
heating
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KR1019990034759A
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Korean (ko)
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KR100300679B1 (en
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강희영
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김광교
한국디엔에스 주식회사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68728—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of separate clamping members, e.g. clamping fingers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment

Abstract

PURPOSE: An apparatus for controlling height of a wafer in a bake for processing the wafer is provided to prevent temperature ununiformity generated at a heating plate, by selectively elevating a side of the wafer heated while settled on the heating plate. CONSTITUTION: A bake unit has a plurality of guide units(11) for guiding a wafer to a circumferential surface of an upper surface of a heating plate(10) and a supporting ball. At least three fixing units(20) are installed on the circumferential surface of the upper surface of the heating plate. A revolving axis(30) is installed in the respective fixing units. An apparatus for controlling height of the wafer in a bake for processing the wafer revolves in an eccentric center of the fixing unit so that a side of the wafer is elevated.

Description

웨이퍼 가공용 베이크의 웨이퍼 높낮이 조절장치{WAFER HIGH AND LOW REGULATOR OF WAFER MANUFATURING BAKE}Wafer height adjusting device for wafer processing bake {WAFER HIGH AND LOW REGULATOR OF WAFER MANUFATURING BAKE}

본 발명은 반도체용 웨이퍼를 제조하는 공정중 베이크유니트의 내부에서 웨이퍼를 가열할 때 상기 웨이퍼의 높이를 미세조정하여 판상으로 형성된 웨이퍼의 가열온도를 균일하게 유지할 수 있는 웨이퍼 가공용 베이크의 웨이퍼 높낮이 조절장치에 관한 것이다.The present invention provides a wafer height adjusting device for a wafer processing bake capable of uniformly maintaining a heating temperature of a wafer formed in a plate shape by finely adjusting the height of the wafer when the wafer is heated inside the baking unit during a semiconductor wafer manufacturing process. It is about.

일반적으로 반도체용 웨이퍼를 제조할 때에는 도 1에 도시된 바와같이 인덱서(1), 반송유니트(2), 스핀유니트(3) 및 베이크유니트(4)로 구성된 가공장치를 이용하여 감광·도포·현상·세정등의 공정을 수행하면서 웨이퍼(W)의 표면에 일정한 패턴을 형성시키고 있으며 상기 공정을 수행하기 전.후의 웨이퍼(W)는 베이크유니트(4)의 내부에 삽입하여 열처리 및 도포처리를 위한 가열공정을 수행하게 된다.Generally, when manufacturing a semiconductor wafer, photosensitization, coating and development using a processing apparatus composed of an indexer 1, a transfer unit 2, a spin unit 3 and a bake unit 4, as shown in FIG. A pattern is formed on the surface of the wafer W while the cleaning process is performed, and the wafer W before and after the process is inserted into the baking unit 4 for heat treatment and coating treatment. The heating process is performed.

특히 반도체의 초집적화를 위하여 최근에는 화학 증폭용 감광액을 이용한 D.U.V등의 공정이 개발되어 발전하고 있으며 이러한 공정에서는 감광액 도포, 노광, 현상 공정의 전후에 실행하는 베이크공정의 온도균일도가 매우 중요한 공정의 요소로 작용되며 특히 웨이퍼가 대형화됨에 따라서 상기 웨이퍼를 가열시켜주는 가열플레이트의 전체면적에 대한 온도 균일도가 150℃를 기준을 최소한 0.3℃ 이하의 미세한 온도를 정밀하게 제어할 수 있는 장치가 절실히 요구되고 있는 실정이다.In particular, for the ultra-integration of semiconductors, a process such as DUV using chemical amplification photoresist has been developed and developed. In this process, the temperature uniformity of the baking process performed before and after the photoresist coating, exposure, and developing process is very important. There is an urgent need for a device capable of precisely controlling fine temperatures of at least 0.3 ° C based on 150 ° C based on the temperature uniformity over the entire area of the heating plate, which acts as an element, and in particular, as the wafer is enlarged. There is a situation.

종래에는 도 1에 도시된 바와같이 베이크유니트(4)의 내부에는 웨이퍼(W)를 가열하기 위한 가열플레이트(10)가 설치되어 있고 상기 가열플레이트(10)의 상부 둘레면에는 웨이퍼(W)를 안내하기 위한 안내가이드(11)가 복수개 설치되어 있으며 상기 가열플레이트(10)의 상면에는 가열플레이트(10)와 웨이퍼(W)가 접촉되는 것을 방지하기 위한 세라믹 재질의 지지볼(12)이 적어도 3개이상 설치되어 있다.In the related art, as shown in FIG. 1, a heating plate 10 for heating the wafer W is installed inside the baking unit 4, and a wafer W is disposed on an upper circumferential surface of the heating plate 10. A plurality of guide guides 11 for guiding are provided, and at least three support balls 12 made of a ceramic material to prevent the heating plate 10 and the wafer W from contacting each other on an upper surface of the heating plate 10. More than

따라서 감광·도포·현상·세정등의 공정을 수행하기 전.후에는 웨이퍼(W)를 가열하고 있으며 이때에는 반송유니트(2)를 이용하여 베이크유니트(4)의 내부에 설치된 가열플레이트(10)의 상부로 이동되면 가열플레이트(10)에 설치된 안내가이드(11)에 의해서 안내되면서 가열플레이트(10)의 중앙으로 안착됨과 동시에 가열플레이트(10)의 상면에 설치된 지지볼(12)의 상부에 접촉되어 웨이퍼(W)는 가열플레이트(10)와 일정거리가 유지되면서 접촉이 방지된다.Therefore, the wafer W is heated before and after the photosensitive, coating, developing, and cleaning processes. In this case, the heating plate 10 installed inside the baking unit 4 by using the transfer unit 2 is used. When moved to the upper portion of the heating plate 10 is guided by the guide guide 11 installed in the center of the heating plate 10 while being seated in contact with the upper portion of the support ball 12 installed on the upper surface of the heating plate 10 As a result, the wafer W is kept in contact with the heating plate 10 while being kept at a predetermined distance.

이러한 상태에서 가열플레이트(10)를 작동시키면 베이크유니트(4)의 내부 온도가 상승되므로 상기 베이크유니트(4)에 삽입된 웨이퍼(W)가 가열되는 것이다.In this state, when the heating plate 10 is operated, the internal temperature of the baking unit 4 is increased, and thus the wafer W inserted into the baking unit 4 is heated.

그러나 이러한 종래에는 베이크유니트(4)에 설치된 가열플레이트(10)에서 발생하는 발열량이 균일할 때에는 웨이퍼(W)를 균일하게 가열할 수 있지만 상기 웨이퍼(W)를 지지하는 지지볼(12)이 가열플레이트(10)의 상부에 고정설치되어 가열플레이트(10)와 웨이퍼(W)의 간격을 조절하지 못하게 되므로 상기 가열플레이트(10)에서 발생하는 발열량이 부분적으로 차이가 발생하면 웨이퍼(W)의 가열온도가 불균일하게 되어 불량품이 생산되는 등의 문제점이 있었다.However, in the related art, when the amount of heat generated by the heating plate 10 installed in the baking unit 4 is uniform, the wafer W may be uniformly heated, but the support ball 12 supporting the wafer W is heated. Since it is fixed to the upper portion of the plate 10 to prevent the adjustment of the gap between the heating plate 10 and the wafer (W), if the amount of heat generated in the heating plate 10 is partially different, heating of the wafer (W) There was a problem that the temperature is non-uniform, such that a defective product is produced.

본 발명은 상기한 문제점을 해결하기 위하여 발명한 것으로서, 가열플레이트와 웨이퍼의 간격을 미세조정하여 상기 가열플레이트의 발열량차이에 의한 웨이퍼의 불균일 가열을 방지할 수 있는 웨이퍼 가공용 베이크의 웨이퍼 높낮이 조절장치를 제공하는데 그 목적이 있다.The present invention is invented to solve the above problems, the wafer height adjustment device of the wafer processing bake that can prevent the non-uniform heating of the wafer due to the heating value difference between the heating plate and the wafer by fine-adjusting The purpose is to provide.

상기 목적을 달성하기 위한 본 발명은 가열플레이트의 상면 둘레면에 웨이퍼를 안내하기 위한 복수의 안내가이드가 설치되어 있고 상기 안내가이드에 안내되어 가열플레이트의 상면 중앙에 위치되는 웨이퍼를 지지하여 가열플레이트와 분리시키는 지지볼이 설치된 베이크유니트에 있어서, 상기 가열플레이트의 상면 둘레에 고정부재가 적어도 3개이상 설치되며 상기 각 고정부재에는 회전축을 설치하되, 웨이퍼의 둘레면에 접촉되어 상기 웨이퍼의 일측을 상승시키도록 상기 고정부재의 중심과 편심된 상태로 회전되도록 하여서된 것이다.The present invention for achieving the above object is provided with a plurality of guide guides for guiding the wafer on the upper circumferential surface of the heating plate and guided to the guide guide to support the wafer located in the center of the upper surface of the heating plate and In the baking unit provided with a support ball for separating, at least three fixing members are installed around the upper surface of the heating plate, and each of the fixing members is provided with a rotating shaft, and the one side of the wafer is raised by contacting the peripheral surface of the wafer. It is to be rotated in an eccentric state with the center of the fixing member to be.

도 1은 일반적인 웨이퍼 가공장치를 도시한 사시도,1 is a perspective view showing a typical wafer processing apparatus,

도 2a 및 도 2b는 종래의 웨이퍼 가열용 베이크를 도시한 사시도 및 단면도,2A and 2B are a perspective view and a cross-sectional view showing a conventional wafer heating bake,

도 3은 본 발명에 따른 웨이퍼 높낮이 조절장치를 도시한 분해사시도,3 is an exploded perspective view showing a wafer height adjusting device according to the present invention;

도 4는 본 발명에 따른 웨이퍼 높낮이 조절장치가 설치된 베이크를 도시한 단면도.Figure 4 is a sectional view showing a bake is installed wafer height adjustment apparatus according to the present invention.

＜도면의 주요부분에 대한 부호의 설명 ＞<Description of the code | symbol about the principal part of drawing>

W : 웨이퍼 1 : 인텍서W: Wafer 1: Inspector

2 : 반송유니트 3 : 스핀유니트2: Return Unit 3: Spin Unit

4 : 베이크유니트 10 : 가열플레이트4: baking unit 10: heating plate

11 : 안내가이드 12 : 지지볼11: guide guide 12: support ball

20 : 고정부재 30 : 회전축20: fixing member 30: rotating shaft

이하 본 발명을 도시한 첨부도면 도 2 및 도 3을 참조하여 상세히 설명하면 다음과 같다.Hereinafter, the present invention will be described in detail with reference to FIGS. 2 and 3.

도 2는 본 발명에 따른 웨이퍼 높낮이 조절장치를 도시한 분해사시도이고, 도 3은 본 발명에 따른 웨이퍼 높낮이 조절장치가 설치된 베이크를 도시한 단면도로서, 본 발명은 베이크유니트(4)의 내부에 웨이퍼(W)를 가열하기 위한 가열플레이트(10)가 설치되어 있고 상기 가열플레이트(10)의 상부 둘레면에는 복수개의 안내가이드(11)가 설치되어 있으며 가열플레이트(10)의 상면에는 세라믹재질의 지지볼(12)이 적어도 3개이상의 설치되어 있다.Figure 2 is an exploded perspective view showing a wafer height adjustment device according to the present invention, Figure 3 is a cross-sectional view showing a bake is installed wafer height adjustment device according to the present invention, the present invention is a wafer inside the baking unit (4) A heating plate 10 for heating (W) is provided, and a plurality of guide guides 11 are installed on the upper circumferential surface of the heating plate 10, and a ceramic material is supported on the upper surface of the heating plate 10. At least three balls 12 are provided.

한편 상기 가열플레이트(10)의 상부 둘레면에는 적어도 3개이상의 고정부재(20)가 설치되어 있고 각 고정부재(20)의 일측에는 회전축(30)이 각각 설치되어 있으며 상기 회전축(30)은 고정부재(20)의 중심과 편심된 상태로 회전가능하게 설치되어 있다.Meanwhile, at least three fixing members 20 are installed on the upper circumferential surface of the heating plate 10, and rotation shafts 30 are respectively installed on one side of each fixing member 20, and the rotation shafts 30 are fixed. The member 20 is rotatably installed in an eccentric state.

이와같이 구성된 본 발명은 감광·도포·현상·세정등의 공정 전.후의 웨이퍼(W)가 반송유니트(2)에 의해서 이동되어 베이크유니트(4)의 내부로 삽입됨에 따라 가열플레이트(10)의 상부로 공급되면 상기 웨이퍼(W)는 가열플레이트(10)에 설치된 안내가이드(11)에 의해서 안내되면서 가열플레이트(10)의 중앙으로 안착된다.According to the present invention configured as described above, the wafer W before and after the process such as photosensitizing, coating, developing, cleaning, etc. is moved by the transfer unit 2 and inserted into the baking unit 4, thereby forming an upper portion of the heating plate 10. When supplied to the wafer (W) is guided by the guide guide 11 installed in the heating plate 10 is seated in the center of the heating plate 10.

따라서 상기 가열플레이트(10)의 상부로 이동된 웨이퍼(W)는 가열플레이트(10)에 설치된 지지볼(12)의 상면에 접촉되면서 가열플레이트(10)와 웨이퍼(W)사이의 간격이 일정하게 유지되면서 접촉이 방지되므로 상기 가열플레이트(10)에서 발생되는 복사열에 의해서 웨이퍼(W)가 가열된다.Therefore, the wafer W moved to the upper portion of the heating plate 10 is in contact with the upper surface of the support ball 12 installed in the heating plate 10 while the interval between the heating plate 10 and the wafer W is constant. Since the contact is prevented while being maintained, the wafer W is heated by the radiant heat generated from the heating plate 10.

한편 상기 가열플레이트(10)에서 발생하는 발열량이 국부적으로 불균일할 경우 웨이퍼(W)로 전달되는 복사열을 균일하게 유지하여야 하며 이때에는 고정부재(20)에 설치된 회전축(30)을 회전시킨다.On the other hand, if the heat generated from the heating plate 10 is locally uneven, the radiant heat transmitted to the wafer W must be maintained uniformly, in which case the rotating shaft 30 installed in the fixing member 20 is rotated.

상기 회전축(30)이 회전되면 이는 고정부재(20)의 중심에 대하여 편심된 상태로 회전하면서 웨이퍼(W)의 일측을 상승시키게 되므로 상기 웨이퍼(W)와 가열플레이트(10) 사이의 간격을 조절하게 되며 상기 간격은 가열플레이트(10)에서 발생하는 발열량의 차이에 따라서 조절하게 되는 것이다.When the rotating shaft 30 is rotated, it raises one side of the wafer W while being rotated in an eccentric state with respect to the center of the fixing member 20, thereby adjusting the distance between the wafer W and the heating plate 10. The interval is to be adjusted according to the difference in the amount of heat generated in the heating plate (10).

이와같이 불균일한 발열량에 따라서 가열플레이트(10)와 웨이퍼(W) 사이의 간격조절이 완료된 후 상기 가열플레이트(10)를 작동시키면 웨이퍼(W)에는 균일한 온도의 복사열이 가해지게되어 웨이퍼의 불량을 방지할 수 있게되는 것이다.As such, when the heating plate 10 is operated after the gap adjustment between the heating plate 10 and the wafer W is completed according to the non-uniform heating amount, radiant heat of uniform temperature is applied to the wafer W, thereby preventing defects of the wafer. It will be able to prevent.

이상에서와 같이 본 발명은 가열플레이트의 상부에 안착된 상태로 가열되는 웨이퍼의 어느 일측을 선택적으로 상승시키게 됨에 따라 상기 가열플레이트에 발생하는 발열량차이에 의한 온도 불균일을 방지하여 웨이퍼를 균일하게 가열하여 불량을 방지할 수 있게되는 매우 유용한 발명이다.As described above, the present invention selectively raises any one side of the wafer to be heated in a state seated on the heating plate, thereby preventing the temperature irregularity caused by the heating value difference generated in the heating plate, thereby uniformly heating the wafer. It is a very useful invention that can prevent a defect.

Claims (1)

가열플레이트(10)의 상면 둘레면에 웨이퍼(W)를 안내하기 위한 복수의 안내가이드(11)가 설치되어 있고 상기 안내가이드(11)에 안내되어 가열플레이트(10)의 상면 중앙에 위치되는 웨이퍼(W)를 지지하여 가열플레이트(10)와 분리시키는 지지볼(12)이 설치된 베이크유니트(4)에 있어서,A plurality of guide guides 11 for guiding the wafer W are provided on the upper circumferential surface of the heating plate 10 and guided to the guide guide 11 to be positioned at the center of the upper surface of the heating plate 10. In the baking unit 4 provided with a support ball 12 for supporting (W) and separating from the heating plate 10, 상기 가열플레이트(10)의 상면 둘레면에 고정부재(20)가 적어도 3개이상 설치되며 상기 각 고정부재(20)에는 회전축(30)을 설치하되, 웨이퍼(W)의 둘레면에 접촉되어 상기 웨이퍼(W)의 일측을 상승시키도록 상기 고정부재(20)의 중심과 편심된 상태로 회전되도록 하여서된 구성을 특징으로 하는 웨이퍼 가공용 베이크의 웨이퍼 높낮이 조절장치.At least three fixing members 20 are installed on the upper circumferential surface of the heating plate 10, and each of the fixing members 20 is provided with a rotating shaft 30, and is in contact with the circumferential surface of the wafer W. Wafer height adjustment device for a wafer processing bake characterized in that the configuration is configured to rotate in an eccentric state with the center of the holding member 20 to raise one side of the wafer (W).
KR1019990034759A 1999-08-21 1999-08-21 Wafer high and low regulator of wafer manufaturing bake KR100300679B1 (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140132679A (en) * 2013-05-08 2014-11-18 도오꾜오까고오교 가부시끼가이샤 Sticking apparatus and sticking method
CN106571329A (en) * 2015-10-12 2017-04-19 沈阳拓荆科技有限公司 Wafer substrate support rack structure
CN106611722A (en) * 2015-10-21 2017-05-03 沈阳拓荆科技有限公司 A two-chamber double-layer support structure integrating positioning and centring functions

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR200205139Y1 (en) * 1995-12-02 2001-01-15 김영환 Guide device in hot plate
KR19980017367U (en) * 1996-09-23 1998-07-06 김영환 Hot Plate with Gap Spacer
KR100212715B1 (en) * 1996-10-08 1999-08-02 윤종용 Wafer loading device in bake chamber
JP3647576B2 (en) * 1996-11-01 2005-05-11 大日本スクリーン製造株式会社 Substrate holder

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140132679A (en) * 2013-05-08 2014-11-18 도오꾜오까고오교 가부시끼가이샤 Sticking apparatus and sticking method
CN106571329A (en) * 2015-10-12 2017-04-19 沈阳拓荆科技有限公司 Wafer substrate support rack structure
CN106611722A (en) * 2015-10-21 2017-05-03 沈阳拓荆科技有限公司 A two-chamber double-layer support structure integrating positioning and centring functions

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