CN106611722A - A two-chamber double-layer support structure integrating positioning and centring functions - Google Patents
A two-chamber double-layer support structure integrating positioning and centring functions Download PDFInfo
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- CN106611722A CN106611722A CN201510694538.1A CN201510694538A CN106611722A CN 106611722 A CN106611722 A CN 106611722A CN 201510694538 A CN201510694538 A CN 201510694538A CN 106611722 A CN106611722 A CN 106611722A
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- Prior art keywords
- wafer support
- layer
- low level
- wafer
- double
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
A two-chamber double-layer support structure integrating positioning and centring functions mainly aims to solve problems such as low production power of wafer equipment and large friction coefficients between wafers and support structures. The invention provides the two-chamber double-layer support structure integrating the positioning and centring functions. The support structure has a high-level double-layer wafer support and a low-level double-layer wafer support. The high-level double-layer wafer support is provided with a wafer support high-level first layer and a wafer support high-level second layer. The low-level double-layer wafer support is provided with a wafer support low-level first layer and a wafer support low-level second layer. The two-chamber double-layer support structure of the invention is simple and reliable in structure, convenient to install, low in manufacturing cost, has an automatic positioning function and improves the product yield.
Description
Technical field
The present invention relates to a kind of two chamber integrates positioning and the double-layer scaffold to center function
Structure, this structure is mainly used in semiconductive thin film deposition preparation process, belongs to semiconductor film
The applied technical field of film device.
Background technology
In semiconductor equipment, load chamber is generally divided into two chambers, and each chamber can only one
The a piece of transmission wafer of piece, such air is long with the time of vacuum switching, and the production capacity of equipment is low.
To realize the transfer function of multi-disc, while saving pumping with backfill time, the structure of wafer support
It is one of the key factor for realizing high production capacity and accurate positioning, it is in mechanical hand that wafer is incoming or pass
During going out load blocks, because the transmittance process of mechanical hand has certain error, wafer
The installation site of frame will not only reach certain required precision, and reduce wafer as far as possible
Contact friction and collision between frame and supporting construction, it is to avoid produce during contact-impact
Grain brings reaction intracavity into affects product yield.In order to meet requirements above, need design a kind of double
Layer supporting structure, both can guarantee that the overall production capacity of raising equipment, while the accuracy of guarantee positioning,
Reliability, as far as possible reduce and the contact area of wafer, the friction between substrate and supporting structure and
Collision.
The content of the invention
The present invention is for the purpose of solving the above problems, there is provided a kind of two chambers collection positioning and centering
In the double-layer bracket structure of one, the double-layer bracket structure not only improves equipment capacity to cardiac function,
Have simultaneously and be automatically positioned to center function, can fully ensure that wafer support in transmittance process
Desired position precision is reached, and the contact area between wafer and supporting structure can be reduced, subtracted
Few friction and collision between substrate and supporting structure, and then subtract less granular generation, positioned
Journey accurately and reliably, is favorably improved the production efficiency and product yield of quasiconductor.
For achieving the above object, the present invention adopts following technical proposals：
A kind of two chamber integrates positioning and the double-layer bracket structure to center function, the support
Structure includes high-position double-layer wafer support with low level bilayer wafer support；The high-position double-layer wafer
Support is provided with wafer support high position ground floor, the wafer support high position second layer, and the low level is double-deck
Wafer support is provided with wafer support low level ground floor, the wafer support low level second layer；The crystalline substance
Circle support high position ground floor, the wafer support high position second layer, wafer support low level ground floor and crystalline substance
Sapphire ball, the spacing cylindrical piece for supporting wafer, institute are respectively equipped with the circle support low level second layer
State and be respectively equipped with installation screw thread on wafer support high position ground floor and wafer support low level ground floor
Hole, further respectively has to center on the high-position double-layer wafer support and low level bilayer wafer support
Hole；
It is described to support the sapphire ball of wafer to be directly installed on high-position double-layer crystalline substance with spacing cylindrical piece
In the installing hole of circle support, then high-position double-layer wafer support is fixed on by installation screwed hole negative
Carrying makes wafer support high position ground floor, the wafer support high position second layer load chamber A on cavity
It is interior；Meanwhile, the sapphire ball for supporting wafer is directly installed on into low level with spacing cylindrical piece double-deck
In the installing hole of wafer support, then low level bilayer wafer support is fixed on by installing screwed hole
Wafer support low level ground floor, the wafer support low level second layer is set to load chamber B on load cavity
It is interior；Four wafers are respectively placed in wafer support high position ground floor, wafer support by mechanical hand
On the high-order second layer, wafer support low level ground floor and the wafer support low level second layer.
The high-position double-layer wafer support, low level bilayer wafer support are respectively between load cavity
Wafer support position location be precision-machined surface, be capable of achieving high-position double-layer wafer support and low level
Double-layer scaffold being accurately positioned in load cavity body.
Wafer support high position ground floor on the high-position double-layer wafer support, wafer support are high-order
The second layer respectively with the low level bilayer wafer support on wafer support low level ground floor, wafer
The support low level second layer is not contour, and when wafer trace is not at the position to center, mechanical hand can
With adjust automatically and to center, the operation to four wafers so can be simultaneously realized.
Beneficial effects of the present invention and feature are：
1st, with automatic positioning function：Wafer is placed on support, it will in being automatically adjusted to
Heart position, accurate positioning reliability is good with mechanical hand conformability；
2nd, easy for installation, rack body is positioned in cavity by polished surface, thus need not
Exact position adjustment is carried out to rack body using special frock；
3rd, the particulate matter for producing in the contact process of wafer and this structure is less, can effectively reduce
Help is played in the particulate matter of pollution wafer, the lifting to product yield；
4th, this structure has the not contour function to center, simple and reliable for structure, manufacturing cost
It is relatively low.
Description of the drawings
Fig. 1 is the structural representation of the high-order wafer double-layer scaffold of the present invention；
Fig. 2 is front view of the double-layer scaffold of the present invention in cavity；
Specific embodiment
With reference to embodiment, further the present invention is described in detail, but invents protection content
It is not limited to the embodiment：
As shown in Figure 1-2, a kind of two chamber integrates positioning with the bilayer to center function
Frame structure, the supporting structure includes high-position double-layer wafer support 1 with low level bilayer wafer support 2；
It is high-order that the high-position double-layer wafer support 1 is provided with wafer support high position ground floor 8, wafer support
The second layer 9, low level bilayer wafer support 2 be provided with wafer support low level ground floor 12,
The wafer support low level second layer 13；The wafer support high position ground floor 8, wafer support is high-order
Distinguish on the second layer 9, wafer support low level ground floor 12 and the wafer support low level second layer 13
It is provided with sapphire ball 4, the spacing cylindrical piece 5 for supporting wafer, the wafer support high position first
Installation screwed hole 6, the high position are respectively equipped with layer 8 and wafer support low level ground floor 12
Further respectively have to centre bore 3 on double-deck wafer support 1 and low level bilayer wafer support 2；Institute
The sapphire ball 4 and spacing cylindrical piece 5 for stating support wafer is directly installed on high-position double-layer wafer
In the installing hole 15 of frame 1, then high-position double-layer wafer support 1 is consolidated by installing screwed hole 6
Being scheduled on load cavity 7 makes wafer support high position ground floor 8, the wafer support high position second layer 9
Load in chamber A10；Meanwhile, by supporting, the sapphire ball 4 of wafer is straight with spacing cylindrical piece 5
Connect in the installing hole 15 of low level bilayer wafer support 1, then by installing screwed hole 6
Low level bilayer wafer support 2 is fixed on load cavity 7 makes wafer support low level ground floor
12nd, the wafer support low level second layer 13 loads in chamber B11；Four wafers 14 are by machinery
Handss are respectively placed in wafer support high position ground floor 8, the wafer support high position second layer 9, wafer
On support low level ground floor 12 and the wafer support low level second layer 13.
Above-mentioned high-position double-layer wafer support 1, low level bilayer wafer support 2 respectively with load cavity
Wafer support position location between 7 is precision-machined surface, is capable of achieving high-position double-layer wafer support
1 is loading being accurately positioned in cavity 7 with low level double-layer scaffold.
Wafer support high position ground floor 8, wafer support on above-mentioned high-position double-layer wafer support 1
The high-order second layer 9 respectively with the low level bilayer wafer support 2 on wafer support low level first
Layer 12, the wafer support low level second layer 13 is not contour, if wafer trace is not to center
Position, mechanical hand so can be realized simultaneously to four platelets with adjust automatically and to center
The operation of circle 14, accurate positioning reliability, and it is good with mechanical hand conformability.
Claims (3)
1. liang chamber integrates positioning and the double-layer bracket structure to center function, its feature
It is that the supporting structure includes high-position double-layer wafer support with low level bilayer wafer support；It is described
High-position double-layer wafer support is provided with wafer support high position ground floor, the wafer support high position second layer,
Low level bilayer wafer support is provided with wafer support low level ground floor, wafer support low level the
Two layers；The wafer support high position ground floor, the wafer support high position second layer, wafer support are low
Sapphire ball, the limit for supporting wafer is respectively equipped with position ground floor and the wafer support low level second layer
Position cylindrical piece, sets respectively on the wafer support high position ground floor and wafer support low level ground floor
There is installation screwed hole, also distinguish on the high-position double-layer wafer support and low level bilayer wafer support
It is provided with to centre bore；
It is described to support the sapphire ball of wafer to be directly installed on high-position double-layer crystalline substance with spacing cylindrical piece
In the installing hole of circle support, then high-position double-layer wafer support is fixed on by installation screwed hole negative
Carrying makes wafer support high position ground floor, the wafer support high position second layer load chamber A on cavity
It is interior；Meanwhile, the sapphire ball for supporting wafer is directly installed on into low level with spacing cylindrical piece double-deck
In the installing hole of wafer support, then low level bilayer wafer support is fixed on by installing screwed hole
Wafer support low level ground floor, the wafer support low level second layer is set to load chamber B on load cavity
It is interior；Four wafers are respectively placed in wafer support high position ground floor, wafer support by mechanical hand
On the high-order second layer, wafer support low level ground floor and the wafer support low level second layer.
2. two chamber as claimed in claim 1 integrate position with to the double of center function
Layer supporting structure, it is characterised in that the high-position double-layer wafer support, low level bilayer wafer
Frame is respectively precision-machined surface with the wafer support position location between load cavity, is capable of achieving height
The double-deck wafer support in position being accurately positioned in load cavity body with low level double-layer scaffold.
3. two chamber as claimed in claim 1 integrate position with to the double of center function
Layer supporting structure, it is characterised in that the wafer support on the high-position double-layer wafer support is high-order
Ground floor, wafer support a high position second layer respectively with the low level bilayer wafer support on wafer
Support low level ground floor, the wafer support low level second layer be not contour, when wafer trace be not at it is right
The position at center, mechanical hand so can be realized simultaneously to four with adjust automatically and to center
The operation of wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510694538.1A CN106611722A (en) | 2015-10-21 | 2015-10-21 | A two-chamber double-layer support structure integrating positioning and centring functions |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510694538.1A CN106611722A (en) | 2015-10-21 | 2015-10-21 | A two-chamber double-layer support structure integrating positioning and centring functions |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106611722A true CN106611722A (en) | 2017-05-03 |
Family
ID=58612742
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510694538.1A Pending CN106611722A (en) | 2015-10-21 | 2015-10-21 | A two-chamber double-layer support structure integrating positioning and centring functions |
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| Country | Link |
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| CN (1) | CN106611722A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111211082A (en) * | 2018-11-22 | 2020-05-29 | 沈阳拓荆科技有限公司 | Wafer transmission device |
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|---|---|---|---|---|
| KR20010018699A (en) * | 1999-08-21 | 2001-03-15 | 김광교 | Wafer high and low regulator of wafer manufaturing bake |
| CN101414571A (en) * | 2007-10-19 | 2009-04-22 | 东京毅力科创株式会社 | Workpiece transfer mechanism, workpiece transfer method and workpiece processing system |
| CN101667531A (en) * | 2008-09-05 | 2010-03-10 | 东京毅力科创株式会社 | Vertical thermal processing apparatus and substrate supporter |
| CN103280421A (en) * | 2013-05-30 | 2013-09-04 | 沈阳拓荆科技有限公司 | Non-isometric position wafer bracket and use method |
| CN203346475U (en) * | 2013-05-29 | 2013-12-18 | 沈阳拓荆科技有限公司 | Auxiliary front-end module of plasma gas phase film deposition equipment |
| CN203638501U (en) * | 2014-01-02 | 2014-06-11 | 北京七星华创电子股份有限公司 | Multi-layer storage table device |
| CN103928378A (en) * | 2014-04-15 | 2014-07-16 | 沈阳拓荆科技有限公司 | Double-layer wafer transfer cavity |
| CN203993273U (en) * | 2014-07-21 | 2014-12-10 | 苏州金螳螂幕墙有限公司 | A kind of centralized positioning processing unit (plant) |
| CN104846347A (en) * | 2015-04-15 | 2015-08-19 | 沈阳拓荆科技有限公司 | Backfill and gas pumping structure of bilayer type loading chamber |
| CN104878364A (en) * | 2015-04-15 | 2015-09-02 | 沈阳拓荆科技有限公司 | Independent backfill and extraction structure with double-layer load chamber |
-
2015
- 2015-10-21 CN CN201510694538.1A patent/CN106611722A/en active Pending
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20010018699A (en) * | 1999-08-21 | 2001-03-15 | 김광교 | Wafer high and low regulator of wafer manufaturing bake |
| CN101414571A (en) * | 2007-10-19 | 2009-04-22 | 东京毅力科创株式会社 | Workpiece transfer mechanism, workpiece transfer method and workpiece processing system |
| CN101667531A (en) * | 2008-09-05 | 2010-03-10 | 东京毅力科创株式会社 | Vertical thermal processing apparatus and substrate supporter |
| CN203346475U (en) * | 2013-05-29 | 2013-12-18 | 沈阳拓荆科技有限公司 | Auxiliary front-end module of plasma gas phase film deposition equipment |
| CN103280421A (en) * | 2013-05-30 | 2013-09-04 | 沈阳拓荆科技有限公司 | Non-isometric position wafer bracket and use method |
| CN203638501U (en) * | 2014-01-02 | 2014-06-11 | 北京七星华创电子股份有限公司 | Multi-layer storage table device |
| CN103928378A (en) * | 2014-04-15 | 2014-07-16 | 沈阳拓荆科技有限公司 | Double-layer wafer transfer cavity |
| CN203993273U (en) * | 2014-07-21 | 2014-12-10 | 苏州金螳螂幕墙有限公司 | A kind of centralized positioning processing unit (plant) |
| CN104846347A (en) * | 2015-04-15 | 2015-08-19 | 沈阳拓荆科技有限公司 | Backfill and gas pumping structure of bilayer type loading chamber |
| CN104878364A (en) * | 2015-04-15 | 2015-09-02 | 沈阳拓荆科技有限公司 | Independent backfill and extraction structure with double-layer load chamber |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111211082A (en) * | 2018-11-22 | 2020-05-29 | 沈阳拓荆科技有限公司 | Wafer transmission device |
| CN111211082B (en) * | 2018-11-22 | 2022-10-25 | 拓荆科技股份有限公司 | Wafer transmission device |
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| RJ01 | Rejection of invention patent application after publication | ||
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Application publication date: 20170503 |