KR20010003752A - Method of manufacturing field emission display device - Google Patents

Abstract

PURPOSE: A method for fabricating a field emission display device is provided to simplify a process and to improve uniformity of a film by forming a gate electrode layer and an insulating film with a sputtering process. CONSTITUTION: A method for fabricating a field emission display device comprises the steps of: forming a protrusion by etching a silicone substrate(10) using a tip shaping mask; forming a first oxidation film(11) by performing a thermal oxidation of the silicone substrate and forming an emitter tip(10B) using the protrusion simultaneously; forming a second oxidation film(12) and a gate metal film on a top face of the first oxidation film; forming a gate electrode layer(13A,13B) by etching the gate metal film to expose the second oxidation film; exposing the emitter tip by etching the first and second oxidation films. The etching of the silicone substrate is achieved in isotropic manner. The second oxidation film is formed by a chemical vapor deposition. The gate metal film is formed using a sputtering process.

Description

Method of manufacturing field emission display device

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a field emission display device, and more particularly, to a method for manufacturing a field emission display device that can be applied to simplify the process and to increase the area.

In general, a field emission display (FED) is a display using a principle of matrix-accessing a field emission array (FEA) and generating cathode ray emission by stimulating a phosphor with an electron beam like a CRT. In addition, unlike a liquid crystal display (LCD) and a CRT, the FED not only realizes a flat plate and a resolution at the same time, but also has a vertex having excellent resolution and reagent angle.

This FED has a cathode plate and an anode plate, and a spacer is interposed therebetween. In addition, the cathode plate is provided with a gate electrode and several emitter tips for emitting electrons to form FEA. The anode plate is provided with an indium tin oxide (ITO) electrode and a phosphor to colorize the field emission display device. To realize.

On the other hand, the emitter tip for determining the brightness of the field emission display device is formed by forming a predetermined hole in the gate electrode layer, and then depositing a metal or silicon in the hole in the shape of a cone.

However, in order to form a conical emitter tip as described above, not only a large number of mask processes are required but also a large area display device is deposited by using an electron beam evaporation (E-beam evaporation) equipment. Difficult to apply to

Accordingly, an object of the present invention is to provide a method of manufacturing a field emission display device which can solve the above-mentioned problems and can be applied to simplify the process and increase the area.

1A to 1F are cross-sectional views illustrating a method of manufacturing a field emission display device according to an exemplary embodiment of the present invention.

(Explanation of symbols for the main parts of the drawing)

10: silicon substrate 10B: emitter tip

11: first oxide film 12: first oxide film

13 gate metal film 13A, 13B: gate electrode layer

100: first photoresist film pattern

In order to achieve the above object, according to the present invention, the doped silicon substrate is etched using a mask for forming a tip to form protrusions, and the silicon substrate having the protrusions is thermally oxidized to form a first oxide film and at the same time, the protrusions. Form an emitter tip. Next, a second oxide film and a gate metal film are formed on the first oxide film, and the gate metal film is etched using the gate mask to expose the second oxide film on the emitter tip to form a gate electrode layer. Then, the second and first oxide films are etched using the gate electrode layer as an etching mask to expose the emitter tip.

In this embodiment, the etching of the silicon substrate proceeds by isotropic etching, the second oxide film is formed by chemical vapor deposition, and the gate metal film is formed by sputtering.

Hereinafter, with reference to the accompanying drawings will be described an embodiment of the present invention.

1A to 1F are cross-sectional views illustrating a method of manufacturing a field emission display device according to an exemplary embodiment of the present invention.

Referring to FIG. 1A, after doping POCl ₃ to a silicon substrate 10 and performing a well drive-in to dope the silicon substrate 10, a tip forming first mask is formed on the silicon substrate 10. The first photoresist film pattern 100 is formed. Then, the silicon substrate 10 isotropically etched using the first photoresist film pattern 100 as an etch mask to form the protrusions 10A, and as shown in FIG. 1B, the first photoresist in a known manner. The film pattern 100 is removed to expose the protrusion 10A.

Referring to FIG. 1C, the surface of the silicon substrate 10 having the protrusion 10A is thermally oxidized to form the first oxide film 11 as the first insulating film and the emitter tip 10B. do. That is, about 45% of the first oxide film 11 is formed under the surface of the silicon substrate 10 and about 55% is formed above the surface. As a result, the surface of the protrusion 10A becomes sharp.

As shown in FIG. 1D, the second oxide film 12 is formed as the second insulating film on the first oxide film 11, and the gate metal film 13 is formed thereon. Preferably, the second oxide film 12 is formed by Chemical Vapor Deposition (CVD), and the gate metal film 13 is formed by depositing an Mo film by sputtering. Here, the first and second oxide films 11 and 12 insulate the cathode line (not shown) from the gate electrode layer to be formed later.

Referring to FIG. 1E, a second photoresist film pattern (not shown) is formed on the gate metal film 13 using a gate mask, and the gate metal is formed by using the second photoresist film pattern as an etching mask. The film 13 is etched to form gate electrode layers 13A and 13B exposing the second oxide film 12 on the emitter tip 10B. Then, the second photoresist film pattern is removed by a known method, and the second and first oxide films 12 and 11 are etched using the gate electrode layers 13A and 13B as an etching mask, as shown in FIG. 1F. To expose the emitter tip 10B.

According to the present invention described above, the gate electrode layer is formed by using a sputter without using two masks of an emitter tip and a gate mask and using an electron beam deposition apparatus, and an insulating film such as an oxide film using thermal oxidation and sputtering. In addition, not only the process is simple but also the surface of the film becomes uniform, and it is possible to apply to large-area display.

In addition, this invention is not limited to the said Example, It can variously deform and implement within the range which does not deviate from the technical summary of this invention.

Claims (4)

Etching the doped silicon substrate using a tip forming mask to form protrusions; Thermally oxidizing the silicon substrate having the protrusion to form a first oxide film and simultaneously forming the protrusion as an emitter tip; Forming a second oxide film and a gate metal film on the first oxide film; Etching the gate metal layer to expose the second oxide layer on the emitter tip by using a gate mask to form a gate electrode layer; And And etching the second and first oxide layers using the gate electrode layer as an etch mask to expose the emitter tips. The method of claim 1, wherein the etching of the silicon substrate is performed by isotropic etching. 2. The method of claim 1, wherein the second oxide film is formed by chemical vapor deposition. The method of manufacturing a field emission display device according to claim 1, wherein the gate metal film is formed by sputtering.