KR20000042409A - Method for forming a gate electrode of a semiconductor device - Google Patents
Method for forming a gate electrode of a semiconductor device Download PDFInfo
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- KR20000042409A KR20000042409A KR1019980058574A KR19980058574A KR20000042409A KR 20000042409 A KR20000042409 A KR 20000042409A KR 1019980058574 A KR1019980058574 A KR 1019980058574A KR 19980058574 A KR19980058574 A KR 19980058574A KR 20000042409 A KR20000042409 A KR 20000042409A
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- forming
- gate electrode
- semiconductor device
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- oxidation process
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- 238000000034 method Methods 0.000 title claims abstract description 58
- 239000004065 semiconductor Substances 0.000 title claims abstract description 21
- 230000003647 oxidation Effects 0.000 claims abstract description 36
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 36
- 229910052751 metal Inorganic materials 0.000 claims abstract description 12
- 239000002184 metal Substances 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 17
- 229920005591 polysilicon Polymers 0.000 claims description 17
- 238000000059 patterning Methods 0.000 claims description 5
- 229910021332 silicide Inorganic materials 0.000 claims description 5
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 5
- 238000004140 cleaning Methods 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 238000005530 etching Methods 0.000 claims description 2
- 230000002159 abnormal effect Effects 0.000 abstract description 7
- 238000009413 insulation Methods 0.000 abstract 2
- 239000010408 film Substances 0.000 description 33
- 238000010438 heat treatment Methods 0.000 description 5
- 229910021341 titanium silicide Inorganic materials 0.000 description 5
- 229910008484 TiSi Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910019001 CoSi Inorganic materials 0.000 description 1
- 229910019974 CrSi Inorganic materials 0.000 description 1
- 229910016006 MoSi Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910006249 ZrSi Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28097—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being a metallic silicide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28247—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon passivation or protection of the electrode, e.g. using re-oxidation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen
- H01L29/4925—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement
- H01L29/4933—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement with a silicide layer contacting the silicon layer, e.g. Polycide gate
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- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
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Abstract
Description
본 발명은 반도체 기술에 관한 것으로, 특히 반도체 소자의 게이트 전극 형성방법에 관한 것이다.The present invention relates to semiconductor technology, and more particularly to a method of forming a gate electrode of a semiconductor device.
일반적으로, 모스 트랜지스터의 게이트 전극은 폴리실리콘막을 사용하여 형성하여 왔다. 그러나, 반도체 소자의 고집적화에 따라 게이트 전극을 비롯한 각종 패턴이 미세화 되고 있으며, 최근에는 0.15㎛ 선폭 이하까지 미세화가 진행되고 있다. 이에 따라, 통상적인 게이트 전극 형성시 사용되어 온 도핑된 폴리실리콘(doped polysilicon)은 그 자체의 높은 비저항 특성으로 인하여 지연 시간이 길어 빠른 동작을 요구하는 소자에 적용하기가 어려운 문제점이 있었다. 이러한 문제점은 반도체 장치의 고집적화에 따라 더욱 심각한 문제로 대두되고 있으며, 이를 개선하기 위하여 텅스텐, 티타늄 등의 고융점 금속을 이용한 폴리사이드(polycide, 실리사이드(silicide)/폴리실리콘) 구조의 게이트 전극 또는 금속/폴리실리콘 구조의 게이트 전극에 대한 관심이 증대되고 있다.In general, the gate electrode of the MOS transistor has been formed using a polysilicon film. However, with the higher integration of semiconductor devices, various patterns including gate electrodes have been miniaturized, and in recent years, miniaturization has been progressed to 0.15 µm or less. Accordingly, doped polysilicon, which has been used in the conventional gate electrode formation, has a problem that it is difficult to apply to devices requiring fast operation because of its high resistivity. This problem is becoming more serious due to the high integration of semiconductor devices, and in order to improve this problem, a gate electrode or metal having a polycide (silicide / polysilicon) structure using a high melting point metal such as tungsten or titanium is improved. There is a growing interest in gate electrodes of polysilicon structures.
이와 같이 폴리사이드 구조 또는 금속/폴리실리콘 구조의 게이트 전극을 형성함에 있어서, 게이트 전극을 패터닝할 때 발생하는 플라즈마 손상 및 후처리 공정에서의 BOE(buffered oxide etchant) 세정시 게이트 산화막 손상을 보상하기 위한 LDD(lightly doped drain) 산화 공정이 거의 필수적으로 요구된다.As described above, in forming a gate electrode having a polycide structure or a metal / polysilicon structure, plasma damage generated when patterning the gate electrode and gate oxide film damage during BOE (buffered oxide etchant) cleaning in a post-treatment process are provided. Lightly doped drain (LDD) oxidation processes are almost necessary.
이러한 종래의 LDD 산화 공정은 퍼니스(furnace) 열처리 방식으로 이루어지기 때문에 LDD 산화 공정시 고온의 산화 분위기에서 실리사이드막 또는 금속막의 이상산화 현상으로 인한 게이트 전극의 변형, 리프팅(lifting) 현상이 유발되는 문제점이 있었다.Since the conventional LDD oxidation process is performed by a furnace heat treatment method, the gate electrode is deformed and lifted due to abnormal oxidation of the silicide film or the metal film in the high temperature oxidizing atmosphere during the LDD oxidation process. There was this.
본 발명은 게이트 패터닝 이후의 후속 공정인 LDD 산화 공정시 실리사이드막 또는 금속막의 이상산화 현상을 억제할 수 있는 반도체 소자의 게이트 전극 형성방법을 제공하는데 그 목적이 있다.It is an object of the present invention to provide a method for forming a gate electrode of a semiconductor device capable of suppressing abnormal oxidation of a silicide film or a metal film in an LDD oxidation process after a gate patterning process.
도 1a 내지 도 1c는 본 발명의 일 실시예에 따른 텅스텐 실리사이드/폴리실리콘 구조의 게이트 전극 형성 공정도.1A to 1C illustrate a process of forming a gate electrode of a tungsten silicide / polysilicon structure according to an embodiment of the present invention.
* 도면의 주요 부분에 대한 부호의 설명* Explanation of symbols for the main parts of the drawings
10 : 실리콘 기판 11 : 게이트 산화막10 silicon substrate 11 gate oxide film
12 : 폴리실리콘막 13 : 티타늄 실리사이드막12 polysilicon film 13: titanium silicide film
14 : 마스크 산화질화막 15 : 열산화막14 mask oxynitride film 15 thermal oxide film
본 발명은 게이트 전극 패터닝 후, 급속열산화(rapid thermal oxidation, RTO)법을 사용하여 산화막을 형성하는 것으로 기존의 퍼니스 열산화 방식의 LDD 산화 공정을 대체하는 기술이다. 따라서, 본 발명은 장시간의 고온 산화 공정에서 발생하는 게이트 이상산화 없이 얇고 균일한 산화막을 형성할 수 있다. RTO 공정시 산화 단계를 초기 급성장 영역(fast initial linear regime), 전이 영역(transition regime), 느린 성장 영역(second slower linear regime)의 3단계로 구분할 수 있는데, 초기 자연산화막이 매우 얇고 실리콘 내에 산소의 확산영역이 존재하기 때문에 초기 성장 단계에서 정상 상태의 RTO 시간이 산화막의 두께를 결정하게 된다. 그러므로, 초기의 성장 단계를 급속 열공정을 이용하여 짧은 시간 내에 게이트 산화막의 필수 조건인 얇고 균일한 산화막을 형성할 수 있다.The present invention is to replace the conventional furnace thermal oxidation LDD oxidation process by forming an oxide film using a rapid thermal oxidation (RTO) method after the gate electrode patterning. Accordingly, the present invention can form a thin and uniform oxide film without gate abnormal oxidation occurring in a long time high temperature oxidation process. During the RTO process, the oxidation stage can be divided into three stages: fast initial linear regime, transition regime, and second slower linear regime. Since the diffusion region exists, the steady state RTO time at the initial growth stage determines the thickness of the oxide film. Therefore, a thin and uniform oxide film, which is an essential condition of the gate oxide film, can be formed in a short time using the rapid thermal process in the initial growth step.
상기의 기술적 과제를 달성하기 위하여 본 발명으로부터 제공되는 반도체 소자의 게이트 전극 형성방법은, 반도체 기판 상에 게이트 절연막을 형성하는 제1 단계; 상기 게이트 절연막 상에 폴리실리콘막을 형성하는 제2 단계; 상기 제2 단계 수행 후, 전체구조 상부에 금속 원소를 포함하는 전도막을 형성하는 제3 단계; 상기 전도막 및 상기 폴리실리콘막을 선택 식각하여 게이트 전극을 패터닝하는 제4 단계; 및 상기 제4 단계 수행 후, 급속열산화 공정을 실시하여 전체구조 표면을 따라 산화막을 형성하는 제5 단계를 포함하여 이루어진다.In order to achieve the above technical problem, a method of forming a gate electrode of a semiconductor device, the method comprising: forming a gate insulating film on a semiconductor substrate; Forming a polysilicon film on the gate insulating film; A third step of forming a conductive film including a metal element on the entire structure after performing the second step; A fourth step of patterning a gate electrode by selectively etching the conductive layer and the polysilicon layer; And a fifth step of forming an oxide film along the entire structure surface by performing a rapid thermal oxidation process after performing the fourth step.
이하, 본 발명이 속한 기술분야에서 통상의 지식을 가진 자가 본 발명을 보다 용이하게 실시할 수 있도록 하기 위하여 본 발명의 바람직한 실시예를 소개하기로 한다.Hereinafter, preferred embodiments of the present invention will be introduced in order to enable those skilled in the art to more easily carry out the present invention.
첨부된 도면 도 1a 내지 도 1c는 본 발명의 일 실시예에 따른 텅스텐/폴리실리콘 구조의 게이트 전극 형성 공정을 도시한 것으로, 이하 이를 참조하여 설명한다.1A to 1C illustrate a process of forming a gate electrode having a tungsten / polysilicon structure according to an embodiment of the present invention, which will be described below with reference to the drawings.
본 실시예에 따른 공정은 우선, 도 1a에 도시된 바와 같이 실리콘 기판(10) 상에 게이트 산화막(11)을 성장시킨 후, 그 상부에 도핑된 폴리실리콘막(12)을 100∼1000Å 두께로 증착한 다음, 그 상부에 티타늄 실리사이드(TiSi2)막(13) 및 마스크 산화질화막(14)을 증착한다. 이때, 티타늄 실리사이드막(13)은 TiSix(x=2.0∼3.0) 타겟을 사용한 스퍼터링법을 사용하여 500∼5000Å의 두께로 증착하며, 증착 직후 700∼900℃의 온도에서 급속열처리 공정을 실시하여 결정화시킨다.In the process according to the present embodiment, first, as shown in FIG. 1A, a gate oxide film 11 is grown on a silicon substrate 10, and then the polysilicon film 12 doped thereon is formed to a thickness of 100 to 1000 Å. After the deposition, a titanium silicide (TiSi 2 ) film 13 and a mask oxynitride film 14 are deposited thereon. At this time, the titanium silicide film 13 was deposited to a thickness of 500 to 5000 kW using a sputtering method using a TiSi x (x = 2.0 to 3.0) target, followed by a rapid heat treatment process at a temperature of 700 to 900 ° C. immediately after deposition. Crystallize.
다음으로, 도 1b에 도시된 바와 같이 마스크 산화질화막(14), 티타늄 실리사이드막(13) 및 폴리실리콘막(12)을 차례로 건식 식각하여 게이트 전극을 패터닝한다.Next, as shown in FIG. 1B, the gate etch is patterned by dry etching the mask oxynitride film 14, the titanium silicide film 13, and the polysilicon film 12 in order.
계속하여, 도 1c에 도시된 바와 같이 기존의 퍼니스 열처리 방식의 LDD 산화 공정을 대신하여, 급속열산화 챔버 내에서 전체구조 표면을 따라 10∼100Å 두께의 열산화막(15)을 성장시킨다. 이때, 박막의 두께는 주로 초기 성장에 의존하므로 초기 자연산화막이 완전히 제거되도록 세정 공정을 실시한 다음 급속열산화 공정을 진행하는 것이 바람직하다.Subsequently, in place of the existing furnace heat treatment LDD oxidation process as shown in FIG. 1C, a thermal oxide film 15 having a thickness of 10 to 100 占 퐉 is grown along the entire structure surface in the rapid thermal oxidation chamber. In this case, since the thickness of the thin film mainly depends on the initial growth, it is preferable to perform the rapid thermal oxidation process after performing the cleaning process to completely remove the initial natural oxide film.
급속열산화 공정의 상세 공정 조건(recipe)은 다음과 같다.Detailed process conditions of the rapid thermal oxidation process are as follows.
가) 분위기 가스 : O2가스 또는 N2O 가스A) Atmosphere gas: O 2 gas or N 2 O gas
나) 분위기 가스 유량비 : 1∼10SLPM(square liter per minute)B) Atmospheric gas flow rate: 1 ~ 10SLPM (square liter per minute)
다) 램핑 속도(ramping rate) : 50∼200℃/초C) Ramping rate: 50∼200 ℃ / sec
라) 급속열처리 온도 : 500∼1000℃D) Rapid heat treatment temperature: 500∼1000 ℃
마) 급속열처리 시간 : 10∼100초E) Rapid heat treatment time: 10 to 100 seconds
이상의 공정을 통해 고온의 퍼니스에서 장시간 동안 이루어지는 기존의 LDD 산화 공정을 대체함으로써 게이트 이상산화 현상을 억제할 수 있게 된다.Through the above process, the gate abnormal oxidation phenomenon can be suppressed by replacing the existing LDD oxidation process performed for a long time in a high temperature furnace.
이상에서 설명한 본 발명은 전술한 실시예 및 첨부된 도면에 의해 한정되는 것이 아니고, 본 발명의 기술적 사상을 벗어나지 않는 범위 내에서 여러 가지 치환, 변형 및 변경이 가능하다는 것이 본 발명이 속하는 기술분야에서 통상의 지식을 가진 자에게 있어 명백할 것이다.The present invention described above is not limited to the above-described embodiments and the accompanying drawings, and various substitutions, modifications, and changes can be made in the art without departing from the technical spirit of the present invention. It will be apparent to those of ordinary knowledge.
예를 들어, 전술한 실시예에서는 티타늄 실리사이드/폴리실리콘 구조의 폴리사이드 게이트 전극을 형성하는 경우를 일례로 들어 설명하였으나, 본 발명은 MO, Ti, Cr, Zr, Nb, Hf, Ta 등의 금속을 사용하여 금속/폴리실리콘 구조의 게이트 전극을 형성하는 경우, TiSi2, CoSi2, VSi2, CrSi2, ZrSi2, NbSi2, MoSi2, HfSi2등의 다른 실리사이드막을 사용하여 폴리사이드 구조의 게이트 전극을 형성하는 경우에도 적용할 수 있다.For example, in the above-described embodiment, a case of forming a polysilicon gate electrode having a titanium silicide / polysilicon structure has been described as an example, but the present invention provides a metal such as MO, Ti, Cr, Zr, Nb, Hf, Ta, and the like. In the case of forming a gate electrode of a metal / polysilicon structure, other silicide films such as TiSi 2 , CoSi 2 , VSi 2 , CrSi 2 , ZrSi 2 , NbSi 2 , MoSi 2 , HfSi 2, etc. It is also applicable to the case of forming a gate electrode.
전술한 본 발명은 급속열산화 공정에 의한 산화막 성장으로 기존의 퍼니스 열산화 방식의 LDD 산화 공정을 대체함으로써 게이트 이상산화 현상을 억제하는 효과가 있으며, 이로 인하여 반도체 소자의 특성 및 신뢰도를 향상시키는 효과가 있다.The present invention described above has the effect of suppressing the gate abnormal oxidation phenomenon by replacing the existing furnace thermal oxidation LDD oxidation process by the oxide film growth by the rapid thermal oxidation process, thereby improving the characteristics and reliability of the semiconductor device There is.
Claims (9)
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| KR1019980058574A KR20000042409A (en) | 1998-12-24 | 1998-12-24 | Method for forming a gate electrode of a semiconductor device |
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| Application Number | Priority Date | Filing Date | Title |
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| KR1019980058574A KR20000042409A (en) | 1998-12-24 | 1998-12-24 | Method for forming a gate electrode of a semiconductor device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| KR100881410B1 (en) * | 2002-06-03 | 2009-02-05 | 매그나칩 반도체 유한회사 | Method for fabricating semiconductor device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| KR100881410B1 (en) * | 2002-06-03 | 2009-02-05 | 매그나칩 반도체 유한회사 | Method for fabricating semiconductor device |
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