KR20000019978A - Silicide transparent electrode and method for preparing the same - Google Patents
Silicide transparent electrode and method for preparing the same Download PDFInfo
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- KR20000019978A KR20000019978A KR1019980038345A KR19980038345A KR20000019978A KR 20000019978 A KR20000019978 A KR 20000019978A KR 1019980038345 A KR1019980038345 A KR 1019980038345A KR 19980038345 A KR19980038345 A KR 19980038345A KR 20000019978 A KR20000019978 A KR 20000019978A
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- silicide
- transparent electrode
- metal
- thin film
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- 229910021332 silicide Inorganic materials 0.000 title claims abstract description 44
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 title claims abstract description 41
- 238000000034 method Methods 0.000 title claims abstract description 12
- 229910052751 metal Inorganic materials 0.000 claims abstract description 25
- 239000002184 metal Substances 0.000 claims abstract description 25
- 238000000151 deposition Methods 0.000 claims abstract description 13
- 239000010409 thin film Substances 0.000 claims abstract description 11
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 8
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 3
- 229910052763 palladium Inorganic materials 0.000 claims abstract description 3
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 3
- 230000005684 electric field Effects 0.000 claims abstract 2
- 238000010438 heat treatment Methods 0.000 claims description 17
- 238000004519 manufacturing process Methods 0.000 claims description 13
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 13
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 230000008021 deposition Effects 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 4
- 229910052723 transition metal Inorganic materials 0.000 claims description 2
- 150000003624 transition metals Chemical class 0.000 claims description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 3
- 239000011651 chromium Substances 0.000 claims 2
- 239000010936 titanium Substances 0.000 claims 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- 229910017052 cobalt Inorganic materials 0.000 claims 1
- 239000010941 cobalt Substances 0.000 claims 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims 1
- -1 nigel (Ni) Chemical class 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 abstract description 7
- 229910052742 iron Inorganic materials 0.000 abstract description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 8
- 238000005755 formation reaction Methods 0.000 description 5
- 238000002834 transmittance Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- 239000007772 electrode material Substances 0.000 description 3
- 229910021334 nickel silicide Inorganic materials 0.000 description 3
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 3
- 230000035699 permeability Effects 0.000 description 3
- 229910005883 NiSi Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229910005881 NiSi 2 Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
- H01L21/76889—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances by forming silicides of refractory metals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Electroluminescent Light Sources (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
본 발명은 기존의 ITO를 대체할 수 있는 새로운 전극 물질로서 실리사이드투명전극과 그 제조 방법에 관한 것이다.The present invention relates to a silicide transparent electrode and a manufacturing method thereof as a new electrode material that can replace the existing ITO.
본 발명의 목적은 ITO에서 문제가 되는 산소(Oxygen)가 없고 고온에서 안정적인 새로운 전극 물질에 대한 필요성의 증대를 충족시키는 데에 있다.It is an object of the present invention to meet the growing need for new electrode materials that are free of oxygen and are stable at high temperatures in ITO.
LCD, 유기 ELD, FED 등 종래의 평판디스플레이와 태양전지, 영상감지 소자 등 빛의 투과가 필요한 곳에서의 화소 전극으로 ITO가 쓰여져 왔다.ITO has been used as a pixel electrode in a conventional flat panel display such as LCD, organic ELD, FED, solar cell, and image sensing device where light transmission is required.
하지만 이러한 ITO는 고온에서의 불안정성과 산소(Oxygen)의 확산에 의한유기 EL물질의 특성변화 등과 같은 문제점을 가지고 있다.However, such ITO has problems such as instability at high temperatures and changes in characteristics of organic EL materials due to diffusion of oxygen.
그 동안 실리사이드는 고밀도 집적회로에서 게이트나 interconnect의 전극물질로서 많이 연구되었다. 실리사이드는 낮은 비저항, 고온 안정성과 형성 및 에칭이 간단하며 높은 접착성 등의 새로운 접촉 재료로 많은 장점을 가지고 있다. 이러한 실리사이드를 투명전극으로 이용함으로써 ITO를 대체할 수 있는 새로운 화소 전극이 가능하다.In the past, silicide has been studied as electrode material of gate or interconnect in high density integrated circuit. Silicides have many advantages as new contact materials such as low resistivity, high temperature stability, easy formation and etching, and high adhesion. By using such silicide as a transparent electrode, a new pixel electrode that can replace ITO is possible.
기존의 ITO는 90% 이상의 높은 투과도와 수십에서 수백 Ω의 매우 낮은 판저항을 가지고 있다. 그러므로 실리사이드 투명전극은 이러한 ITO의 장점을 수용하여야 한다.Conventional ITO has a high transmittance of more than 90% and a very low sheet resistance of tens to hundreds of kΩ. Therefore, the silicide transparent electrode must accept the advantages of this ITO.
그리고 실리사이드 투명 전극은 그 형성과 에칭이 간단하여 기존의 공정에서 손쉽게 적용될 수 있다. 그리고 이것을 제조하기 위해 필요한 실리콘계 박막은 TFT에서의 활성화층으로 쓰이고 있고 소오스와 드레인 전극을 만들때 사용되는 것도 실리사이드이므로 실리사이드 투명전극 제조 공정은 TFT 제조 공정 중의 한 공정으로 대체될 수 있고 결국 화소 전극만을 위한 별도의 공정이 필요없게 될 수 있다.In addition, the silicide transparent electrode may be easily applied in an existing process because its formation and etching are simple. Since the silicon-based thin film needed to manufacture this is used as an active layer in the TFT and silicide is also used to make the source and drain electrodes, the silicide transparent electrode manufacturing process can be replaced by one of the TFT manufacturing processes. There may be no need for a separate process.
제 1도 : 실리사이드 투명전극을 제조하기 위한 시료의 단면구조1: Cross-sectional structure of the sample for manufacturing silicide transparent electrode
제 2도: 열처리에 의해 완성된 실리사이드 투명전극의 단면 구조FIG. 2: Cross-sectional structure of silicide transparent electrode completed by heat treatment
제 3도: 열처리 온도 250℃, 열처리 시간 1시간, 금속 두께 1Å인 경우에 투과도와 판저항Fig. 3: Permeability and sheet resistance at 250 ° C heat treatment temperature, 1 hour heat treatment time and 1 1 metal thickness
제 4도: 열처리 온도 250℃, 열처리 시간 1시간, 금속 두께 0.3Å인 경우에 투과도와 판저항4: Permeability and sheet resistance at the heat treatment temperature of 250 ° C., heat treatment time of 1 hour, and metal thickness of 0.3Å
제 5도: 열처리 온도 350℃, 열처리 시간 1시간, 금속 두께 0.3Å인 경우에 투과도와 판저항FIG. 5: Permeability and Plate Resistance at Heat Treatment Temperature of 350 ° C., Heat Treatment Time of 1 Hour, Metal Thickness of 0.3Å
* 도면의 주요 부분에 대한 부호의 명칭* Names of symbols for main parts of the drawings
11 : 유리 12 : 실리콘계 박막11 glass 12 silicon-based thin film
13 : 금속 21 : 실리사이드 투명전극13 metal 21 silicide transparent electrode
먼저 유리 기판 위에 40Å 이하의 실리콘계 박막을 형성하고 그 위에 플라즈마를 이용해 금속을 매우 얇게 증착한다.First, a silicon-based thin film of 40 mW or less is formed on a glass substrate, and metal is deposited very thinly using plasma thereon.
질소(N2) 혹은 헬륨(He) 가스를 사용하여 실리콘계 박막을 플라즈마에 노출시킨 후 열처리하거나 플라즈마에 노출시키면서 열처리하여 실리사이드 투명전극을 제조한다.The silicon-based thin film is exposed to plasma using nitrogen (N 2 ) or helium (He) gas and then heat-treated or heat-treated while being exposed to plasma to produce a silicide transparent electrode.
이 때 열처리 온도는 200∼600℃ 이며, 열처리 시간은 1시간 이내이다.At this time, the heat treatment temperature is 200 ~ 600 ℃, heat treatment time is within 1 hour.
그리고 플라즈마의 세기, 노출 시간, 증착압력 등을 조절하여 박막내의 금속양을 3Å이하의 매우 얇게 조절할 수 있다. 이 때 증착되는 금속 물질로는 Ni, Co, Ti, Fe, Cr, Pd 등의 실리사이드를 형성하는 전이금속이 사용된다.In addition, the amount of metal in the thin film can be controlled to be very thin (less than 3 kW) by controlling the intensity, exposure time, deposition pressure, and the like of the plasma. In this case, as the metal material to be deposited, a transition metal for forming silicides such as Ni, Co, Ti, Fe, Cr, and Pd is used.
일반적으로 실리사이드 상은 금속/실리콘의 비와 열처리 온도에 따라 결정된다. 초기에 형성되는 실리사이드는 금속이 풍부한 M2Si (M:금속)의 형태이며, 열처리 온도가 증가함에 따라 MSi → MSi2의 순서로 그 상이 변화하여 Si이 풍부한 실리사이드를 형성하고, 금속의 종류에 따라 다양한 결정상을 이룬다. 실리사이드의 형성 반응은 금속 원자나 실리콘 원자 중 한 성분이 완전히 소모될 때까지 반응을 계속하므로 금속/실리콘의 비율도 실리사이드의 상을 결정하는 중요한 요소가 된다.Generally, the silicide phase is determined by the ratio of metal / silicon and the heat treatment temperature. The silicide formed initially is in the form of metal-rich M 2 Si (M: metal), and as the heat treatment temperature increases, the phase changes in the order of MSi → MSi 2 to form Si-rich silicide, Accordingly, various crystal phases are formed. The formation reaction of the silicide continues the reaction until one component of the metal atom or the silicon atom is completely consumed, so the ratio of metal / silicon is also an important factor in determining the phase of the silicide.
니켈 실리사이드의 경우 주 확산 물질은 니켈이며, Si 확산에 의한 Si의 석출이 없기 때문에 매끈한 표면을 갖는다. 니켈 실리사이드는 열처리 온도의 증가에 따라 Ni2Si → NiSi → NiSi2의 순서로 상이 변화한다.In the case of nickel silicide, the main diffusion material is nickel and has a smooth surface because there is no precipitation of Si by Si diffusion. Nickel silicide changes its phase in the order of Ni 2 Si → NiSi → NiSi 2 with increasing heat treatment temperature.
여러 가지 실리사이드의 형성 온도는 금속의 종류와 금속과 반응하는 실리콘 기판의 종류에 따라 다르며, 일반적으로 금속의 녹는점이 높을수록 실리사이드 형성 온도가 높아진다. 또한 비정질 실리콘의 경우, 결정질 실리콘의 경우에 비하여 낮은 온도에서 실리사이드가 형성된다.The formation temperature of various silicides depends on the type of metal and the type of silicon substrate reacting with the metal. Generally, the higher the melting point of the metal, the higher the silicide formation temperature. In addition, in the case of amorphous silicon, silicide is formed at a lower temperature than in the case of crystalline silicon.
[실시예]EXAMPLE
제 1도는 본 발명에 의해 실리사이드 투명전극을 제조하기 바로 전의 시료의 단면 구조이다. 약 40Å이하의 실리콘계 박막에 플라즈마를 이용해 약 3Å이하의 금속을 증착하였다. 이때 플라즈마의 세기, 노출시간, 증착압력 등을 변화시키면서 금속양을 조절한다. 본 실시예에서는 플라즈마의 세기는 20W, 증착 압력은 150mTorr로 고정하고 노출시간으로 박막 내 금속양을 조절했다. 이 때 플라즈마로 증착된 금속은 니켈을 사용하였다.1 is a cross-sectional structure of a sample immediately before the production of the silicide transparent electrode according to the present invention. A metal of about 3 kW or less was deposited using a plasma on a silicon-based thin film of about 40 kW or less. At this time, the amount of metal is controlled while changing the intensity, exposure time, deposition pressure, and the like of the plasma. In the present embodiment, the plasma intensity was fixed at 20 W, the deposition pressure was 150 mTorr, and the amount of metal in the thin film was controlled by the exposure time. At this time, the metal deposited by plasma used nickel.
제 2도는 본 발명의 실시예에 따라 250℃에서 1시간 열처리함으로써 제작한 실리사이드 투명전극의 단면 구조이다. 니켈 실리사이드의 경우 250℃ ∼350℃에서 가장 낮은 비저항을 가지는 NiSi상을 형성한다.2 is a cross-sectional structure of a silicide transparent electrode prepared by heat treatment at 250 ° C. for 1 hour according to an embodiment of the present invention. In the case of nickel silicide, a NiSi phase having the lowest specific resistance is formed at 250 ° C to 350 ° C.
제 3도는 본 발명의 실시예에 따라 30Å의 비정질 실리콘 위에 플라즈마를이용해 약 1Å의 니켈을 증착한 후 250℃에서 1시간 열처리하여 제작된 실리사이드 투명전극의 가시광선 영역에서의 투과도와 판저항을 나타낸다.3 shows the transmittance and sheet resistance in the visible light region of the silicide transparent electrode fabricated by depositing about 1 니켈 of nickel using plasma on 30 Å of amorphous silicon and heat treatment at 250 ° C. for 1 hour according to an embodiment of the present invention. .
제 4도는 본 발명의 실시예에 따라 30Å의 비정질 실리콘 위에 플라즈마를이용해 약 0.3Å의 니켈을 증착한 후 250℃에서 1시간 열처리하여 제작된 실리사이드 투명전극의 가시광선 영역에서의 투과도와 판저항을 나타낸다.4 shows the transmittance and sheet resistance in the visible light region of the silicide transparent electrode fabricated by depositing about 0.3 [mu] s of nickel using plasma on 30 [mu] s of amorphous silicon and heat treatment at 250 [deg.] C. for 1 hour according to an embodiment of the present invention. Indicates.
제 5도는 본 발명의 실시예에 따라 30Å의 비정질 실리콘 위에 플라즈마를이용해 약 0.3Å의 니켈을 증착한 후 350℃에서 1시간 열처리하여 제작된 실리사이드 투명전극의 가시광선 영역에서의 투과도와 판저항을 나타낸다.FIG. 5 shows the transmittance and sheet resistance in the visible light region of a silicide transparent electrode fabricated by depositing about 0.3 [mu] s of nickel on plasma of 30 [mu] s using amorphous silicon and heat treatment at 350 [deg.] C. for 1 hour according to an embodiment of the present invention. Indicates.
1. TFT-LCD의 화소 전극1. Pixel electrode of TFT-LCD
2. Organic EL의 화소 전극2. Pixel electrodes of Organic EL
3. FED의 화소 전극3. Pixel electrode of FED
4. 기타 정보디스플레이의 화소 전극4. Other Information Pixel Electrode of Display
5. 태양전지의 투명 전극5. Transparent Electrode of Solar Cell
6. 영상감지소자의 투명 전극6. Transparent electrode of image sensing device
Claims (8)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019980038345A KR100311926B1 (en) | 1998-09-17 | 1998-09-17 | Silicide transparent electrode and manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019980038345A KR100311926B1 (en) | 1998-09-17 | 1998-09-17 | Silicide transparent electrode and manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20000019978A true KR20000019978A (en) | 2000-04-15 |
| KR100311926B1 KR100311926B1 (en) | 2001-12-17 |
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| KR1019980038345A KR100311926B1 (en) | 1998-09-17 | 1998-09-17 | Silicide transparent electrode and manufacturing method |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20010078862A (en) * | 2001-05-02 | 2001-08-22 | 조육형 | In-situ heat treatment system and methode for oxide deposition on plastic films |
| KR101370631B1 (en) * | 2012-12-12 | 2014-03-12 | 재단법인 포항산업과학연구원 | Method for manufacturing ferro titan silicide nano composite for anode active material of lithium secondary batteries |
| KR20200093947A (en) * | 2019-01-29 | 2020-08-06 | 포항공과대학교 산학협력단 | Transparent electrode, manufacturing method of the same and use of the same |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20160131339A (en) * | 2015-05-06 | 2016-11-16 | 고려대학교 산학협력단 | Forming method for transparent conduction electrode and semiconductor device having transparent conduction electrode formed by the same |
-
1998
- 1998-09-17 KR KR1019980038345A patent/KR100311926B1/en not_active IP Right Cessation
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20010078862A (en) * | 2001-05-02 | 2001-08-22 | 조육형 | In-situ heat treatment system and methode for oxide deposition on plastic films |
| KR101370631B1 (en) * | 2012-12-12 | 2014-03-12 | 재단법인 포항산업과학연구원 | Method for manufacturing ferro titan silicide nano composite for anode active material of lithium secondary batteries |
| KR20200093947A (en) * | 2019-01-29 | 2020-08-06 | 포항공과대학교 산학협력단 | Transparent electrode, manufacturing method of the same and use of the same |
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| Publication number | Publication date |
|---|---|
| KR100311926B1 (en) | 2001-12-17 |
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