KR20000008107A - Diffusion process equipment for fabricating semiconductor device - Google Patents
Diffusion process equipment for fabricating semiconductor device Download PDFInfo
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- KR20000008107A KR20000008107A KR1019980027789A KR19980027789A KR20000008107A KR 20000008107 A KR20000008107 A KR 20000008107A KR 1019980027789 A KR1019980027789 A KR 1019980027789A KR 19980027789 A KR19980027789 A KR 19980027789A KR 20000008107 A KR20000008107 A KR 20000008107A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4408—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber by purging residual gases from the reaction chamber or gas lines
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45578—Elongated nozzles, tubes with holes
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
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- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
Abstract
Description
본 발명은 반도체장치 제조용 확산공정설비에 관한 것으로서, 보다 상세하게는 웨이퍼 상에 공정가스를 분사하여 균일한 확산막을 형성하도록 다수개의 분사노즐이 구비된 웨이퍼보트를 포함하여 이루어지는 반도체장치 제조용 확산공정설비에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a diffusion process facility for manufacturing a semiconductor device, and more particularly, to a diffusion process facility for manufacturing a semiconductor device including a wafer boat having a plurality of injection nozzles to form a uniform diffusion film by injecting process gas onto a wafer. It is about.
일반적으로 반도체장치 제조공정 내에서 웨이퍼는 사진, 확산, 식각, 화학기상증착 및 금속증착 등의 공정을 반복하여 수행한 후 반도체장치로 제작된다.In general, a wafer is manufactured into a semiconductor device after repeatedly performing a process such as photographing, diffusion, etching, chemical vapor deposition, and metal deposition in a semiconductor device manufacturing process.
상기 반도체장치 제조공정 중 확산공정은 웨이퍼 상에 불순물입자를 확산시켜 상기 웨이퍼가 요구되는 전기적 특성을 지니게 하는 공정으로, 농도가 높은 곳에서 낮은 곳으로 농도평형상태를 이룰 때까지 물질이 이동하는 확산현상을 이용하는 공정이다.In the semiconductor device manufacturing process, a diffusion process is a process in which impurity particles are diffused on a wafer so that the wafer has required electrical characteristics. The diffusion of materials moves from a high concentration to a low concentration equilibrium. It is a process using development.
이러한 상기 확산공정은 확산로의 내부에 웨이퍼를 위치시키고, 상기 불순물입자가 포함된 공정가스를 상기 확산로의 내부에 분사하여 상기 웨이퍼 상에 상기 불순물입자를 확산시켜 이루어지며, 이를 위하여 구성된 반도체장치 제조용 확산공정설비에서 실시된다.The diffusion process is performed by placing a wafer inside a diffusion path and injecting a process gas containing the impurity particles into the diffusion path to diffuse the impurity particles on the wafer. It is carried out in manufacturing diffusion process equipment.
도1을 참조하여 설명하면, 종래의 반도체장치 제조용 확산공정설비(1)는 확산로(2)를 구비하고 있다.Referring to FIG. 1, the conventional diffusion process equipment 1 for manufacturing a semiconductor device is provided with a diffusion path 2.
상기 확산로(2)의 내부에는 일련의 이송장치(도시하지 않음)에 의해 다수개의 웨이퍼(3)가 층을 이루며 다단으로 적재된 웨이퍼보트(4)가 위치하고 있다.Inside the diffusion path 2, a wafer boat 4 in which a plurality of wafers 3 are stacked in layers by a series of transfer devices (not shown) is located.
또한, 상기 확산로(2)의 내부에는 상기 웨이퍼보트(4)의 상부에 근접하여 공정가스를 분사하는 분사노즐(5) 및 상기 분사노즐(5)로 상기 공정가스를 공급하는 가스공급부가 구비되어 있다.In addition, the diffusion path 2 is provided with an injection nozzle 5 for injecting a process gas close to the upper portion of the wafer boat 4 and a gas supply unit for supplying the process gas to the injection nozzle 5. It is.
상기 가스공급부는 상기 공정가스를 공급하는 가스공급원(6)과, 상기 가스공급원(6) 및 상기 분사노즐(5)을 연결하는 가스공급튜브(7)를 구비하여 이루어진다.The gas supply part includes a gas supply source 6 for supplying the process gas, and a gas supply tube 7 for connecting the gas supply source 6 and the injection nozzle 5.
그리고, 상기 확산로(2)의 하부에는 상기 불순물입자가 확산된 후, 잔류하는 상기 공정가스를 배출하는 배기구(8)가 형성되어 있다.In addition, an exhaust port 8 for discharging the process gas remaining after the impurity particles have been diffused is formed in the lower portion of the diffusion path 2.
따라서, 상기 가스공급원(6)에서 상기 가스공급튜브(7)를 통해 상기 공정가스를 상기 분사노즐(5)로 공급하면, 상기 분사노즐(5)은 상기 확산로(2)의 상부에서 상기 공정가스를 분사한다.Therefore, when the process gas is supplied from the gas supply source 6 through the gas supply tube 7 to the injection nozzle 5, the injection nozzle 5 is disposed at the top of the diffusion path 2. Inject gas.
상기 공정가스는 상기 확산로(2)의 상부에서 분사되어 하부를 향하여 이동하며, 상기 확산로(2)의 내부에 위치하고 있는 상기 웨이퍼보트(4)에 적재된 상기 웨이퍼(3) 상에 분포되고, 상기 공정가스에 포함된 상기 불순물입자가 상기 웨이퍼(3) 상에 확산되며, 상기 불순물입자에 의해 상기 웨이퍼(3)는 요구되는 전기적 특성을 지니게 된다.The process gas is injected from the upper part of the diffusion path 2 and moves downward, and is distributed on the wafer 3 loaded on the wafer boat 4 located inside the diffusion path 2. The impurity particles contained in the process gas are diffused onto the wafer 3, and the impurity particles have the required electrical characteristics.
그리고, 상기 불순물입자가 상기 웨이퍼(3) 상에 확산된 후, 잔류하는 상기 공정가스는 상기 확산로(2)의 하부에 형성된 상기 배기구(8)를 통해 배출된다.After the impurity particles are diffused onto the wafer 3, the remaining process gas is discharged through the exhaust port 8 formed under the diffusion path 2.
그러나, 상기 공정가스는 상기 웨이퍼보트(4)의 상부에서 하부를 향하여 이동하므로 상기 웨이퍼보트(4)에 층을 이루며 다단으로 적재된 상기 웨이퍼(3)의 중심부까지 고르게 분포되지 못하므로, 상기 불순물입자가 상기 웨이퍼(3) 상에 고르게 확산되지 못하여 상기 웨이퍼(3) 상에 형성된 확산막이 균일하지 못하고, 따라서 웨이퍼의 수율이 저하되는 문제점이 있었다.However, since the process gas moves from the top of the wafer boat 4 to the bottom, the process gas is not evenly distributed to the center of the wafer 3 stacked in layers and stacked in the wafer boat 4. There was a problem that the particles were not evenly spread on the wafer 3 and the diffusion film formed on the wafer 3 was not uniform, and thus the yield of the wafer was lowered.
본 발명은 상기와 같은 종래의 문제점을 해결하기 위한 것으로, 그 목적은 웨이퍼에 근접하여 공정가스를 분사하는 다수개의 분사노즐이 구비된 웨이퍼보트를 구비하여 상기 웨이퍼 상에 상기 공정가스에 포함된 불순물입자를 고르게 확산시킴으로써 균일한 확산막을 형성하고, 웨이퍼의 수율을 향상시키게 하는 반도체장치 제조용 확산공정설비를 제공하는데 있다.The present invention is to solve the above conventional problems, the object is to include a wafer boat having a plurality of injection nozzles for injecting the process gas in close proximity to the wafer impurity contained in the process gas on the wafer The present invention provides a diffusion process facility for manufacturing a semiconductor device in which a uniform diffusion film is formed by uniformly diffusing particles to improve the yield of a wafer.
도1은 종래의 반도체장치 제조용 확산공정설비를 나타낸 부분단면도이다.1 is a partial cross-sectional view showing a conventional diffusion process equipment for manufacturing a semiconductor device.
도2는 본 발명의 바람직한 일 실시예에 의한 반도체장치 제조용 확산공정설비를 나타낸 부분단면도이다.2 is a partial cross-sectional view showing a diffusion process apparatus for manufacturing a semiconductor device according to an embodiment of the present invention.
도3은 도2의 웨이퍼 상에 분사되는 공정가스의 흐름을 나타낸 도면이다.3 is a view illustrating a flow of process gas injected on the wafer of FIG. 2.
※ 도면의 주요 부분에 대한 부호의 설명※ Explanation of codes for main parts of drawing
1, 9 : 반도체장치 제조용 확산공정설비1, 9: diffusion process equipment for semiconductor device manufacturing
2, 10 : 확산로 3 : 웨이퍼2, 10: diffusion furnace 3: wafer
4, 11 : 웨이퍼보트 5, 16 : 분사노즐4, 11: wafer boat 5, 16: injection nozzle
6, 18, 23 : 가스공급원 7, 19, 22 : 가스공급튜브6, 18, 23: gas supply source 7, 19, 22: gas supply tube
8, 20 : 배기구 12 : 슬롯(Slot)8, 20: exhaust port 12: slot
13 : 웨이퍼지지대 14 : 하부지지부재13 wafer support 14 lower support member
15 : 상부지지부재 17 : 가스공급통로15: upper support member 17: gas supply passage
21 : 퍼지노즐(Purge-nozzle)21: Purge-nozzle
상기의 목적을 달성하기 위하여 본 발명의 반도체장치 제조용 확산공정설비는, 확산로와, 다수개의 웨이퍼를 적재하여 상기 확산로의 내부에 위치하고 다수개의 분사노즐을 구비하는 웨이퍼보트와, 상기 웨이퍼보트에 구비된 상기 분사노즐로 공정가스를 공급하는 가스공급수단 및 상기 확산로의 내부에 잔류하는 가스를 배기하는 가스배기수단을 포함하여 이루어지는 것을 특징으로 한다.In order to achieve the above object, a diffusion process apparatus for manufacturing a semiconductor device of the present invention includes a diffusion path, a wafer boat loaded with a plurality of wafers and positioned in the diffusion path, and having a plurality of injection nozzles; It characterized in that it comprises a gas supply means for supplying a process gas to the injection nozzle provided and a gas exhaust means for exhausting the gas remaining in the diffusion passage.
이하, 본 발명의 구체적인 실시예를 첨부한 도면을 참조하여 상세히 설명한다.Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.
도2를 참조하여 설명하면, 본 발명의 바람직한 일 실시예에 의한 반도체장치 제조용 확산공정설비(9)는 공정가스를 분사하여 상기 공정가스에 포함된 불순물입자가 웨이퍼(3) 상에 확산되도록 확산로(10)를 구비하고 있으며, 상기 확산로(10)의 내부에 웨이퍼(3)가 위치한다.Referring to FIG. 2, the diffusion process apparatus 9 for manufacturing a semiconductor device according to an exemplary embodiment of the present invention diffuses a process gas to diffuse impurity particles contained in the process gas onto the wafer 3. The furnace 10 is provided, and the wafer 3 is positioned inside the diffusion path 10.
이때, 상기 웨이퍼(3)는 웨이퍼보트(11)에 층을 이루며 다단으로 적재되고, 상기 웨이퍼보트(11)는 일련의 이송장치(도시하지 않음)에 의해 상기 확산로(10)의 내부에 위치하게 된다.In this case, the wafer 3 is stacked on the wafer boat 11 in layers and the wafer boat 11 is positioned inside the diffusion path 10 by a series of transfer devices (not shown). Done.
그리고, 상기 웨이퍼보트(11)는 상기 웨이퍼(3)가 위치하여 적재되는 다수개의 슬롯(12)이 형성된 웨이퍼지지대(13)를 구비하고 있으며, 상기 웨이퍼지지대(13)의 하부에는 하부지지부재(14)가 구비되어 상기 웨이퍼지지대(13)를 지지한다.In addition, the wafer boat 11 includes a wafer support 13 having a plurality of slots 12 on which the wafer 3 is placed and loaded, and a lower support member under the wafer support 13. 14 is provided to support the wafer support 13.
또한, 상기 웨이퍼지지대(13)의 수평유동에 의한 상기 웨이퍼(3)의 흔들림 및 추락을 방지하도록 웨이퍼지지대(13)의 상부에는 상부지지부재(15)가 구비되어 있다.In addition, the upper support member 15 is provided on the upper part of the wafer support 13 to prevent the wafer 3 from shaking and falling due to the horizontal flow of the wafer support 13.
한편, 상기 웨이퍼지지대(13)에 형성된 다수개의 상기 슬롯(12)에는 상기 공정가스를 분사하는 분사노즐(16)이 각각 형성되어 있으며, 상기 분사노즐(16)은 상기 슬롯(12)의 내측면벽에 형성되어 있다.On the other hand, the plurality of slots 12 formed in the wafer support 13 are each formed with injection nozzles 16 for injecting the process gas, the injection nozzle 16 is the inner side wall of the slot 12 It is formed in.
도3을 참조하여 설명하면, 본 발명에서는 상기 웨이퍼(3)를 지지하기 위하여 4개의 웨이퍼지지대(13)가 구비되어 있으며, 각각의 상기 웨이퍼(3)에 대해 각각 4개의 상기 분사노즐(16)이 구비되어 있다.Referring to FIG. 3, in the present invention, four wafer supports 13 are provided to support the wafer 3, and each of the four injection nozzles 16 for each wafer 3 is provided. It is provided.
이때, 상기 분사노즐(16)의 직경은 2mm 내지 6mm로 형성되는 것이 바람직하고, 상기 웨이퍼보트(11)에 모두 200개 내지 300개가 형성되는 것이 바람직하다.In this case, the diameter of the injection nozzle 16 is preferably formed of 2mm to 6mm, it is preferable that all 200 to 300 are formed on the wafer boat (11).
그리고, 상기 분사노즐(16)에서 분사되는 상기 공정가스의 분사방향은 중앙에 위치한 2개의 상기 분사노즐(16)은 전방을 향하여 서로 평행하게 분사하고, 좌, 우측에 위치한 2개의 상기 분사노즐(16)은 가운데에 위치한 상기 분사노즐(16)의 분사방향과 수직한 방향에서 10° 내지 30° 의 범위에서 전방을 향하여 비껴서 분사하는 것이 바람직하다.And, the injection direction of the process gas injected from the injection nozzle 16, the two injection nozzles 16 located in the center are sprayed in parallel to each other toward the front, the two injection nozzles (left and right) ( 16 is preferably sprayed in a forward direction in the range of 10 ° to 30 ° in the direction perpendicular to the injection direction of the injection nozzle 16 located in the center.
여기서, 상기 분사노즐(16)의 직경과, 개수 및 상기 공정가스를 분사하는 분사각도는 소정의 범위내에서 다양한 변형이 가능하며, 이는 당업자에게 있어서 수월히 수행될 수 있는 것이다.Here, the diameter of the injection nozzle 16, the number and the injection angle for injecting the process gas can be variously modified within a predetermined range, which can be easily performed by those skilled in the art.
다시 도2를 참조하여 설명하면, 상기 웨이퍼지지대(13)에는 각각의 상기 분사노즐(16)과 연결된 가스공급통로(17)가 형성되어 있다.Referring to FIG. 2 again, the wafer support 13 has a gas supply passage 17 connected to each of the injection nozzles 16.
상기 가스공급통로(17)는 상기 공정가스를 공급하는 가스공급수단과 연결되어 있으며, 상기 가스공급수단은 가스공급원(18)과, 상기 가스공급원(18)과 상기 가스공급통로(17)를 연결하는 가스공급튜브(19)를 구비하고 있다.The gas supply passage 17 is connected with a gas supply means for supplying the process gas, and the gas supply means connects a gas supply source 18, the gas supply source 18, and the gas supply passage 17. The gas supply tube 19 is provided.
여기서, 상기 가스공급튜브(19)는 상기 하부플레이트(14)를 관통하여 각각의 상기 웨이퍼지지대(13)에 형성되어 있는 상기 가스공급통로(17)와 연결되도록, 상기 웨이퍼보트(11)에 근접해서는 상기 가스공급통로(17)의 개수와 동일한 개수의 분기관이 형성되어 있다.Here, the gas supply tube 19 is close to the wafer boat 11 so as to be connected to the gas supply passage 17 formed in each wafer support 13 through the lower plate 14. In the case of the same number of branch pipes as the number of the gas supply passage 17 is formed.
한편, 상기 확산로(10)에는 상기 웨이퍼(3) 상에 상기 불순물입자가 확산된 후, 잔류하는 상기 공정가스를 배출하도록 가스배기수단이 구비된다.On the other hand, the diffusion path 10 is provided with a gas exhaust means to discharge the process gas remaining after the impurity particles are diffused on the wafer (3).
상기 가스배기수단은 상기 확산로(10)에 형성된 배기구(20)를 구비하고 있으며, 상기 배기구(20)의 반대측에는 퍼지노즐(21)을 구비하고 있다.The gas exhaust means includes an exhaust port 20 formed in the diffusion path 10, and a purge nozzle 21 on the opposite side of the exhaust port 20.
상기 퍼지노즐(21)은 상기 확산로(10)의 내부에 잔류하는 상기 공정가스를 일방향의 유동을 형성하여 배출하도록 퍼지가스를 분사하며, 상기 퍼지가스는 상기 웨이퍼(3) 상에 분사된 상기 공정가스와 동일한 것이 바람직하다.The purge nozzle 21 injects a purge gas to discharge the process gas remaining in the diffusion path 10 by forming a flow in one direction, and the purge gas is injected onto the wafer 3. It is preferable that the same as the process gas.
이는 상기 확산로(10)의 내부에 위치하는 상기 웨이퍼(3)가 다른 종류의 가스에 의해 그 특성이 변하는 것을 방지하기 위함이다.This is to prevent the wafer 3 located inside the diffusion path 10 from changing its characteristics by different kinds of gases.
그리고, 상기 퍼지노즐(21)은 가스공급튜브(22)에 의해 상기 공정가스를 공급하는 가스공급원(23)과 연결되어 있다.The purge nozzle 21 is connected to a gas supply source 23 which supplies the process gas by a gas supply tube 22.
여기서, 본 발명의 상기 반도체장치 제조용 확산공정설비(9)의 동작에 대해 설명하면, 상기 웨이퍼보트(11)에는 다수개의 상기 웨이퍼(3)가 층을 이루며 다단으로 적재되어 있으며, 상기 웨이퍼보트(11)는 일련의 이송장치(도시하지 않음)에 의해 상기 확산로(10)의 내부에 위치하게 된다.Herein, an operation of the diffusion process equipment 9 for manufacturing a semiconductor device of the present invention will be described. A plurality of the wafers 3 are stacked on the wafer boat 11 in layers, and the wafer boat ( 11 is located inside the diffusion path 10 by a series of transfer devices (not shown).
그리고, 상기 가스공급원(18)은 상기 공정가스를 상기 가스공급튜브(19) 및 상기 웨이퍼지지대(13)에 형성되어 있는 상기 가스공급통로(17)를 통해 상기 분사노즐(16)로 공급하며, 상기 분사노즐(16)은 상기 공정가스를 상기 웨이퍼(3) 상으로 분사한다.The gas supply source 18 supplies the process gas to the injection nozzle 16 through the gas supply passage 17 formed in the gas supply tube 19 and the wafer support 13. The injection nozzle 16 injects the process gas onto the wafer 3.
이때, 상기 분사노즐(16)은 각각의 상기 웨이퍼(3)가 위치하도록 상기 웨이퍼지지대(13)에 형성된 상기 슬롯(12)의 내측면벽에 각각 형성되어 있으며, 상기 분사노즐(16)에서 분사되는 상기 공정가스의 분사방향은 중앙에 위치한 2개의 상기 분사노즐(16)은 전방을 향하여 서로 평행하게 분사하고, 좌, 우측에 위치한 2개의 상기 분사노즐(16)은 가운데에 위치한 상기 분사노즐(16)의 분사방향과 수직한 방향에서 10° 내지 30° 의 범위에서 전방을 향하여 비껴서 분사하는 것이 바람직하다.In this case, the injection nozzles 16 are formed on the inner side walls of the slots 12 formed on the wafer support 13 so that each of the wafers 3 are positioned, and are ejected from the injection nozzles 16. The injection direction of the process gas is the two injection nozzles 16 located in the center are sprayed in parallel to each other toward the front, the two injection nozzles 16 located on the left, right are the injection nozzles 16 located in the center It is preferable to inject toward the front in the range of 10 ° to 30 ° in the direction perpendicular to the spraying direction of h).
따라서, 상기 공정가스는 상기 웨이퍼(3) 상에 고르게 분포되고, 상기 공정가스에 포함된 상기 불순물입자는 상기 웨이퍼(3) 상에 확산되어 균일한 확산막을 형성하며, 상기 웨이퍼(3)는 요구되는 전기적 성질을 지니게 된다.Therefore, the process gas is evenly distributed on the wafer 3, the impurity particles contained in the process gas are diffused on the wafer 3 to form a uniform diffusion film, and the wafer 3 is required. Electrical properties.
그리고, 상기 불순물입자가 상기 웨이퍼(3) 상에 확산된 후, 잔류하는 상기 공정가스는 상기 퍼지노즐(21)에서 분사된 상기 퍼지가스에 의해 일방향으로 유동하게 되고, 상기 확산로(10)에 형성된 상기 배기구(20)를 통해 배출된다.In addition, after the impurity particles are diffused onto the wafer 3, the remaining process gas flows in one direction by the purge gas injected from the purge nozzle 21 and flows into the diffusion path 10. It is discharged through the exhaust port 20 formed.
따라서, 상기 웨이퍼보트에 구비된 다수개의 상기 분사노즐을 통해 상기 공정가스가 상기 웨이퍼 상에 고르게 분사되므로 균일한 확산막을 형성할 수 있다.Accordingly, the process gas is uniformly sprayed on the wafer through the plurality of injection nozzles provided in the wafer boat, thereby forming a uniform diffusion film.
이상에서와 같이 본 발명에 따른 반도체장치 제조용 확산공정설비에 의하면 웨이퍼 상에 균일한 확산막을 형성하고, 웨이퍼의 수율을 향상시키게 하는 효과를 갖는다.As described above, according to the diffusion process equipment for manufacturing a semiconductor device according to the present invention, it is possible to form a uniform diffusion film on the wafer and to improve the yield of the wafer.
이상에서 본 발명은 기재된 구체예에 대해서만 상세히 설명되었지만 본 발명의 기술사상범위내에서 다양한 변형 및 수정이 가능함은 당업자에게 있어서 명백한 것이며, 이러한 변형 및 수정이 첨부된 특허청구범위에 속함은 당연한 것이다.Although the present invention has been described in detail only with respect to the described embodiments, it will be apparent to those skilled in the art that various modifications and changes are possible within the technical scope of the present invention, and such modifications and modifications belong to the appended claims.
Claims (9)
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