KR19990026639A - Transverse electric field liquid crystal display device and manufacturing method thereof - Google Patents
Transverse electric field liquid crystal display device and manufacturing method thereof Download PDFInfo
- Publication number
- KR19990026639A KR19990026639A KR1019970048847A KR19970048847A KR19990026639A KR 19990026639 A KR19990026639 A KR 19990026639A KR 1019970048847 A KR1019970048847 A KR 1019970048847A KR 19970048847 A KR19970048847 A KR 19970048847A KR 19990026639 A KR19990026639 A KR 19990026639A
- Authority
- KR
- South Korea
- Prior art keywords
- substrate
- electrode
- liquid crystal
- electric field
- transverse electric
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
- G02F1/134363—Electrodes characterised by their geometrical arrangement for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
- G02F1/133711—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers by organic films, e.g. polymeric films
- G02F1/133723—Polyimide, polyamide-imide
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
Abstract
본 발명에 따른 횡전계방식 액정표시소자는 기판과, 상기 기판의 장축방향에 평행하게 배열된 게이트배선과, 상기 게이트배선에 수직하게 배열되어 화소영역을 정의하는 데이터배선과, 이웃하는 상기 데이터배선 사이에 형성된 공통배선과, 상기 공통배선에 수직하게 형성되어 횡전계를 인가하는 데이터전극 및 공통전극과, 상기 기판과 대응하는 기판 사이에 형성된 액정조성물층으로 이루어진다.A transverse electric field liquid crystal display device according to the present invention includes a substrate, a gate wiring arranged in parallel with a long axis direction of the substrate, a data wiring arranged perpendicular to the gate wiring to define a pixel region, and the adjacent data wiring. A common wiring formed therebetween, a data electrode and a common electrode formed perpendicular to the common wiring to apply a transverse electric field, and a liquid crystal composition layer formed between the substrate and the corresponding substrate.
Description
본 발명은 횡전계방식 액정표시소자에 관한 것으로, 특히, 배선구조 및 횡전계를 인가하는 전극구조를 변환시켜 개구율을 향상시키는 동시에, 제조공정을 단순화한 횡전계방식 액정표시소자 및 그 제조방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a transverse electric field type liquid crystal display device, and more particularly, to a transverse electric field type liquid crystal display device and a method of manufacturing the same in which the wiring structure and the electrode structure to which the transverse electric field is applied are improved, and the manufacturing process is simplified. It is about.
도 1 내지 도 2는 종래 횡전계방식 액정표시소자의 단위화소의 평면도 및 A-A'선 단면도로서, 도면에 나타낸 바와 같이, 제1기판 위에 배열되어 화소영역을 정의하는 데이터배선(1) 및 게이트배선(2)과, 상기한 게이트배선(2)과 평행하게 화소내에 배열된 공통배선(5)과, 상기한 게이트배선(2)과 데이터배선(1)의 교차점에 배치된 박막트랜지스터와, 상기한 화소내에 데이터배선(1)과 대략 평행하게 배열된 데이터전극(19) 및 공통전극(11)으로 구성된다.1 to 2 are plan views and a cross-sectional view taken along line A-A 'of a unit pixel of a conventional transverse electric field type liquid crystal display device. As shown in the drawing, data wiring 1 arranged on a first substrate to define a pixel region, and A thin film transistor arranged at the intersection of the gate wiring 2, the common wiring 5 arranged in the pixel in parallel with the gate wiring 2, and the gate wiring 2 and the data wiring 1; The data electrode 19 and the common electrode 11 are arranged in the pixel substantially parallel to the data wiring 1.
박막트랜지스터는 제1기판(3) 위에 형성되어 상기 게이트배선(2)과 접속되는 게이트전극(10)과, 상기 게이트전극(10) 위에 적층된 SiNx 또는 SiOx와 같은 물질로 이루어진 게이트절연막(13)과, 상기 게이트절연막(13) 위에 형성된 반도체층(15)과, 상기 반도체층(15) 위에 형성된 오믹컨택트층(16)과, 상기한 오믹컨택트층(16) 위에 형성되어 데이터배선(1)과 데이터전극(19)에 각각 접속되는 소스전극(17) 및 드레인전극(18)으로 구성된다. 화소내의 공통전극(11)은 제1기판 위에 형성되어 공통배선에 접속되며 데이터전극(19)은 게이트절연막(13) 위에 형성되어 박막트랜지스터의 드레인전극(18)에 접속된다. 박막트랜지스터, 데이터전극(19) 및 게이트절연막(13) 위에는 SiNx 또는 SiOx와 같은 물질로 이루어진 보호막(20)이 기판 전체에 걸쳐 적층되어 있으며, 그 위에 제1배향막(미도시)이 도포되고 배향방향이 결정된다.The thin film transistor is formed on the first substrate 3 to form a gate electrode 10 connected to the gate wiring 2, and a gate insulating layer 13 made of a material such as SiNx or SiOx stacked on the gate electrode 10. And a semiconductor layer 15 formed on the gate insulating film 13, an ohmic contact layer 16 formed on the semiconductor layer 15, and an ohmic contact layer 16 formed on the data wiring 1. It consists of a source electrode 17 and a drain electrode 18 respectively connected to the data electrode 19. The common electrode 11 in the pixel is formed on the first substrate and connected to the common wiring, and the data electrode 19 is formed on the gate insulating film 13 and connected to the drain electrode 18 of the thin film transistor. On the thin film transistor, the data electrode 19 and the gate insulating film 13, a protective film 20 made of a material such as SiNx or SiOx is stacked over the entire substrate, and a first alignment film (not shown) is applied thereon and an orientation direction is applied thereon. This is determined.
또한, 상기한 제1기판(3)과 대응하는 제2기판(4) 위에는 빛의 누설을 방지하는 차광층(6), R, G 및 B의 칼라필터소자로 이루어진 칼라필터층(7) 및 오버코트층(8)이 차례로 적층되어 있다.Further, on the first substrate 3 and the second substrate 4 corresponding to the above, the light shielding layer 6 which prevents light leakage, the color filter layer 7 made of color filter elements of R, G and B and the overcoat Layers 8 are stacked in sequence.
상기한 구조를 갖는 종래 액정표시소자는 편중된 복수의 전극에 의해 낮은 개구율을 갖고, 횡전계를 인가하는 공통전극과 데이터전극이 중첩되는 부분을 스토리지(storage)로 이용하므로써 해당부분의 액정분자가 비정상적으로 구동하게 되고, 상기 게이트배선과 평행하게 형성된 공통전극은 장축방향으로 길게 형성되므로 저항이 커져, 공통전극 신호왜곡의 원인이 된다.The conventional liquid crystal display device having the above-described structure has a low aperture ratio by a plurality of biased electrodes, and the liquid crystal molecules of the corresponding portion are formed by using a portion where the common electrode and the data electrode overlap with the transverse electric field are used as storage. The common electrode which is driven abnormally and formed in parallel with the gate wiring is formed long in the long axis direction, resulting in a large resistance, which causes the common electrode signal distortion.
본 발명은 상기한 종래 기술의 문제점을 해결하기 위한 것으로, 횡전계를 인가하는 복수의 전극쌍을 기판의 단축방향에 평행하게 형성하고, 상기 전극쌍에 하나의 공통배선을 적용하며, 상기 공통배선이 이웃하는 두 개의 데이터배선과 짝을 이루도록 한 횡전계방식 액정표시소자를 제공하는 것을 목적으로 한다.The present invention is to solve the above problems of the prior art, a plurality of electrode pairs for applying a transverse electric field is formed parallel to the short axis direction of the substrate, one common wiring is applied to the electrode pair, the common wiring An object of the present invention is to provide a transverse electric field type liquid crystal display device which is paired with two neighboring data lines.
본 발명의 다른 목적은, 상기 공통배선 및 공통전극의 형성을 소오스공정과 같이 수행하여 제조공정을 단축하는 것이다.Another object of the present invention is to shorten the manufacturing process by performing the formation of the common wiring and the common electrode in the same manner as the source process.
상기한 목적을 달성하기 위하여, 본 발명에 따른 횡전계방식 액정표시소자는 제1기판 위에 형성되어 상기 게이트배선과 접속되는 게이트전극과, 상기 게이트전극 위에 적층된 게이트절연막과, 상기 게이트절연막 위에 형성된 반도체층과, 상기 반도체층 위에 형성된 오믹컨택트층과, 상기한 오믹컨택트층 위에 형성되어 데이터배선과 데이터전극에 각각 접속되는 소스 및 드레인전극으로 구성된다. 또한, 화소내의 공통전극은 게이트절연막 위에 상기 데이터배선과 평행하게 형성되어 공통배선에 접속된다. 이때, 상기한 공통전극, 데이터전극은 상기 데이터배선 및 공통배선과 함께 단일 평면상에서 형성되고, 상기 공통배선은 이웃하는 화소에 공통으로 적용된다. 상기한 박막트랜지스터 위에는 SiNx 또는 SiOx와 같은 물질로 이루어진 보호막이 적층되어 있으며, 기판 전체에 걸쳐 제1배향막이 도포되고 배향방향이 결정된다.In order to achieve the above object, the transverse electric field type liquid crystal display device according to the present invention comprises a gate electrode formed on a first substrate and connected to the gate wiring, a gate insulating film stacked on the gate electrode, and formed on the gate insulating film. And a semiconductor layer, an ohmic contact layer formed on the semiconductor layer, and a source and drain electrode formed on the ohmic contact layer and connected to the data wiring and the data electrode, respectively. Further, the common electrode in the pixel is formed in parallel with the data wiring on the gate insulating film and connected to the common wiring. In this case, the common electrode and the data electrode are formed on a single plane together with the data wiring and the common wiring, and the common wiring is commonly applied to neighboring pixels. A protective film made of a material such as SiNx or SiOx is stacked on the thin film transistor, and a first alignment layer is coated on the entire substrate, and an orientation direction is determined.
상기한 제1기판과 대응하는 제2기판 위에는 상기 박막트랜지스터, 게이트배선, 데이터배선 및 공통배선 근처로 빛이 새는 것을 방지하는 차광층을 형성하고, 그 위에 순서대로 칼라필터층, 오버코트층을 형성한다. 계속해서, 기판 전체에 걸쳐 제2배향막을 형성한 후, 상기한 두 기판 사이에 액정층을 형성한다.On the second substrate corresponding to the first substrate, a light shielding layer is formed to prevent light leakage near the thin film transistor, the gate wiring, the data wiring, and the common wiring, and a color filter layer and an overcoat layer are sequentially formed thereon. . Subsequently, after forming the second alignment film over the entire substrate, a liquid crystal layer is formed between the above two substrates.
도 1은, 일반적인 횡전계방식 액정표시소자의 평면도.1 is a plan view of a general transverse electric field type liquid crystal display device.
도 2는, 도 1의 A-A'선 단면도.FIG. 2 is a cross-sectional view taken along the line AA ′ of FIG. 1. FIG.
도 3은, 본 발명에 따른 횡전계방식 액정표시소자의 평면도.3 is a plan view of a transverse electric field type liquid crystal display device according to the present invention.
도 4는, 도 3의 B-B'선 단면도.4 is a cross-sectional view taken along the line BB ′ of FIG. 3.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
103 : 제1기판 110 : 게이트전극103: first substrate 110: gate electrode
111 : 공통전극 113 : 게이트절연막111: common electrode 113: gate insulating film
115 : 반도체층 116 : 오믹컨택트층115: semiconductor layer 116: ohmic contact layer
117 : 소스전극 118 : 드레인전극117 source electrode 118 drain electrode
119 : 데이터전극 120 : 보호막119: data electrode 120: protective film
이하, 본 발명의 바람직한 실시예를 도면을 참조하여 상세하게 설명한다.Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings.
도 3 내지 도 4는 본 발명에 따른 횡전계방식 액정표시소자의 평면도 및 B-B'선 단면도로서, 도면에 나타낸 바와 같이, 제1기판 위에 배열되어 화소영역을 정의하는 데이터배선(101a, 101b, 101c, 101d) 및 게이트배선(102)과, 상기한 게이트배선(102)과 수직하게 화소내에 배열된 공통배선(112)과, 상기한 게이트배선(102)과 데이터배선(101a, 101b, 101c, 101d)의 교차점에 배치된 복수의 박막트랜지스터와, 상기한 화소내에 데이터배선(101a, 101b, 101c, 101d)과 대략 수직하게 배열된 복수의 데이터전극(119) 및 공통전극(111)으로 구성된다.3 to 4 are plan views and cross-sectional views taken along line B-B 'of the transverse electric field type liquid crystal display device according to the present invention. As shown in the drawing, data wirings 101a and 101b arranged on a first substrate to define a pixel region. , 101c and 101d and the gate wiring 102, the common wiring 112 arranged in the pixel perpendicular to the gate wiring 102, the gate wiring 102 and the data wiring 101a, 101b and 101c. And a plurality of thin film transistors arranged at the intersections of 101d, a plurality of data electrodes 119 and a common electrode 111 arranged substantially perpendicular to the data lines 101a, 101b, 101c, and 101d in the pixel. do.
박막트랜지스터는 제1기판(103) 위에 형성되어 상기 게이트배선(102)과 접속되는 게이트전극(110)과, 상기 게이트전극(110) 위에 적층된 SiNx 또는 SiOx와 같은 물질로 이루어진 게이트절연막(113)과, 상기 게이트절연막(113) 위에 형성된 반도체층(115)과, 상기 반도체층(115) 위에 형성된 오믹컨택트층(116)과, 상기한 오믹컨택트층(116) 위에 형성되어 데이터배선(101a, 101b, 101c, 101d)과 데이터전극(119)에 각각 접속되는 소스전극(117) 및 드레인전극(118)으로 구성된다. 화소내의 공통전극(111)은 공통배선(112)에 접속되며 게이트절연막(113) 위에 형성되는데, 이들과 함께 형성되는 데이터전극(119)은 박막트랜지스터의 드레인전극(118)에 접속된다. 박막트랜지스터, 공통전극(111), 공통배선(112), 데이터전극(119) 및 게이트절연막(113) 위에는 SiNx 또는 SiOx와 같은 물질로 이루어진 보호막(120)이 기판 전체에 걸쳐 적층되어 있으며, 그 위에 배향막(미도시)이 도포되고 배향방향이 결정된다.The thin film transistor is formed on the first substrate 103, the gate electrode 110 connected to the gate wiring 102, and the gate insulating layer 113 made of a material such as SiNx or SiOx stacked on the gate electrode 110. And a semiconductor layer 115 formed on the gate insulating layer 113, an ohmic contact layer 116 formed on the semiconductor layer 115, and an ohmic contact layer 116 formed above the data wirings 101a and 101b. And a source electrode 117 and a drain electrode 118 connected to the 101c and 101d and the data electrode 119, respectively. The common electrode 111 in the pixel is connected to the common wiring 112 and is formed on the gate insulating film 113, and the data electrode 119 formed therewith is connected to the drain electrode 118 of the thin film transistor. On the thin film transistor, the common electrode 111, the common wiring 112, the data electrode 119, and the gate insulating film 113, a protective film 120 made of a material such as SiNx or SiOx is stacked over the entire substrate. An alignment film (not shown) is applied and the orientation direction is determined.
도 4에서 부호 130은 특정한 구성요소를 지칭하는 것이 아니고, 도 3의 B-B'선 단면도 상에서 나타나는 공통전극, 공통배선 및 데이터전극의 형태를 도시한 것이다. 또한, 부호 131은 박막트랜지스터부의 게이트전극(110)과 함께 형성되는 게이트패드를 나타낸다.In FIG. 4, reference numeral 130 does not refer to a specific component, but illustrates the shape of the common electrode, the common wiring, and the data electrode shown in the sectional view taken along the line BB ′ of FIG. 3. Reference numeral 131 denotes a gate pad formed together with the gate electrode 110 of the thin film transistor portion.
도면에서 상기 제1기판과 대응하는 제2기판의 구성요소들은 종래 기술에서의 구조와 동일하므로 생략하였다.In the drawings, the components of the second substrate corresponding to the first substrate are the same as those of the structure of the related art, and thus are omitted.
이하, 상기한 구조를 갖는 액정표시소자의 제조방법을 설명한다.Hereinafter, the manufacturing method of the liquid crystal display element which has the above-mentioned structure is demonstrated.
먼저, 기판(103) 위에 Cr, Mo 또는 Ta와 같은 물질을 패터닝하여 게이트배선, 게이트전극(110) 및 게이트패드(131)를 형성한 후, 상기 게이트전극(110) 위에 SiNx 또는 SiOx와 같은 물질로 게이트절연막(113)을 형성한다. 계속해서, 상기 게이트전극(110)이 형성된 부분에 비정질실리콘 및 불순물비정질실리콘을 패터닝하여 반도체층(115) 및 오믹컨택트층(116)을 형성한 후, Al 또는 Ti와 같은 물질을 패터닝하여 소스전극(117), 드레인전극(118), 공통배선(112), 공통전극(111) 및 데이터전극(119)을 상기 기판(103)의 단축방향을 따라 형성한다. 이때, 상기 공통배선(112)은 이웃하는 화소의 중간 부분에 형성되어 두 개의 화소에 공통으로 적용된다. 마지막으로, 상기 게이트절연막(113)과 동일한 물질로 기판 전체에 걸쳐 보호막(120)을 형성한 후, 패터닝하여 게이트패드영역을 오픈하고, 상기 기판(103)의 전영역에 걸쳐 배향막(미도시)을 형성한다. 이때, 배향막의 배향방향은 폴리이미드(polyimide) 계열의 배향막을 도포하고 러빙을 실시하여 결정할 수도 있고, PSCN(polysiloxane cinnamate) 또는 PVCN(polyvinyl cinnamate)계 물질로 이루어진 광배향막에 광을 조사하여 결정할 수도 있다. 이때, 광의 조사는 편광되거나 또는 편광되지 않은 빛을 사용하여 1회 또는 그 이상을 실시하는 것이 가능하다.First, a material such as Cr, Mo, or Ta is patterned on the substrate 103 to form a gate wiring, a gate electrode 110, and a gate pad 131, and then a material such as SiNx or SiOx on the gate electrode 110. The gate insulating film 113 is formed. Subsequently, the semiconductor layer 115 and the ohmic contact layer 116 are formed by patterning amorphous silicon and impurity amorphous silicon on the portion where the gate electrode 110 is formed, and then patterning a material such as Al or Ti to form a source electrode. 117, the drain electrode 118, the common wiring 112, the common electrode 111, and the data electrode 119 are formed along the short axis direction of the substrate 103. In this case, the common line 112 is formed in the middle portion of the neighboring pixel and is commonly applied to two pixels. Finally, after the passivation layer 120 is formed over the entire substrate using the same material as the gate insulating layer 113, the gate pad region is opened by patterning the alignment layer (not shown) over the entire region of the substrate 103. To form. In this case, the alignment direction of the alignment layer may be determined by applying a polyimide-based alignment layer and rubbing, or may be determined by irradiating light to an optical alignment layer made of PSCN (polysiloxane cinnamate) or PVCN (polyvinyl cinnamate) material. have. At this time, the irradiation of light can be performed once or more times using light that is polarized or unpolarized.
상기한 제조방법을 패터닝(patterning) 단계로 보면, 기판상에 게이트전극을 패턴하는 단계와, 상기 게이트전극상에 반도체층 및 오믹컨택트층을 패턴하는 단계와, 상기 오믹컨택트층상의 소스전극, 드레인전극 및 화소영역내의 공통전극 및 데이터전극을 동시에 패턴하는 단계와, 상기 기판 전체에 걸쳐 보호막을 패턴하는 단계로 나눌 수 있다.According to the manufacturing method described above as a patterning step, patterning a gate electrode on a substrate, patterning a semiconductor layer and an ohmic contact layer on the gate electrode, a source electrode and a drain on the ohmic contact layer Patterning the common electrode and the data electrode in the electrode and the pixel region at the same time, and patterning the protective film over the entire substrate.
본 발명에 따른 횡전계방식 액정표시소자는, 공통배선을 기판의 단축방향에 따라 형성하므로써 선저항을 감소시켜 구동전압을 감소시킬 수 있을 뿐만 아니라, 두개의 화소가 하나의 공통배선을 공유하므로써 개구율을 증가시킬 수 있다.In the transverse electric field type liquid crystal display device according to the present invention, the common wiring is formed along the short axis direction of the substrate to reduce the line resistance and reduce the driving voltage, and the aperture ratio is achieved by the two pixels sharing one common wiring. Can be increased.
Claims (16)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019970048847A KR100275213B1 (en) | 1997-09-25 | 1997-09-25 | in-plane switching mode liquid crystal display device and method of making the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019970048847A KR100275213B1 (en) | 1997-09-25 | 1997-09-25 | in-plane switching mode liquid crystal display device and method of making the same |
Publications (2)
Publication Number | Publication Date |
---|---|
KR19990026639A true KR19990026639A (en) | 1999-04-15 |
KR100275213B1 KR100275213B1 (en) | 2000-12-15 |
Family
ID=19521696
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019970048847A KR100275213B1 (en) | 1997-09-25 | 1997-09-25 | in-plane switching mode liquid crystal display device and method of making the same |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR100275213B1 (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100516053B1 (en) * | 1998-01-26 | 2005-12-06 | 삼성전자주식회사 | Flat panel liquid crystal display and manufacturing method thereof |
KR101255314B1 (en) * | 2006-06-30 | 2013-04-23 | 엘지디스플레이 주식회사 | In-Plane Switching mode Liquid Crystal Display Device and Method for Manufacturing the Same |
KR101409647B1 (en) * | 2007-08-08 | 2014-07-02 | 엘지디스플레이 주식회사 | Liquid crystal display device |
KR20150001430A (en) * | 2013-06-27 | 2015-01-06 | 엘지디스플레이 주식회사 | Display device having narrow bezel and fabricating method thereof |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100689312B1 (en) * | 2003-11-11 | 2007-03-08 | 엘지.필립스 엘시디 주식회사 | In plane switching mode liquid crystal display device and method for fabricating thereof |
KR101733150B1 (en) | 2010-03-05 | 2017-05-25 | 삼성디스플레이 주식회사 | Liquid crsytal display |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3465835B2 (en) * | 1995-08-21 | 2003-11-10 | 松下電器産業株式会社 | Active matrix type liquid crystal display |
-
1997
- 1997-09-25 KR KR1019970048847A patent/KR100275213B1/en not_active IP Right Cessation
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100516053B1 (en) * | 1998-01-26 | 2005-12-06 | 삼성전자주식회사 | Flat panel liquid crystal display and manufacturing method thereof |
KR101255314B1 (en) * | 2006-06-30 | 2013-04-23 | 엘지디스플레이 주식회사 | In-Plane Switching mode Liquid Crystal Display Device and Method for Manufacturing the Same |
KR101409647B1 (en) * | 2007-08-08 | 2014-07-02 | 엘지디스플레이 주식회사 | Liquid crystal display device |
KR20150001430A (en) * | 2013-06-27 | 2015-01-06 | 엘지디스플레이 주식회사 | Display device having narrow bezel and fabricating method thereof |
Also Published As
Publication number | Publication date |
---|---|
KR100275213B1 (en) | 2000-12-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100313949B1 (en) | Multi-domain Liquid Crystal Display Device | |
KR100313952B1 (en) | Multi-domain liquid crystal display device | |
US6529256B1 (en) | In-plane switching mode liquid crystal display device | |
KR100357216B1 (en) | Multi-domain liquid crystal display device | |
KR100212284B1 (en) | Channel protection type thin film transistor substrate | |
US6509939B1 (en) | Hybrid switching mode liquid crystal display device and method of manufacturing thereof | |
JP2006106658A (en) | Mask and method for manufacturing display plate for liquid crystal display apparatus using the same | |
KR100301855B1 (en) | Multi-domain liquid crystal display device | |
JP3617719B2 (en) | Liquid crystal display | |
KR20020019185A (en) | Multi domain liquid crystal display device and method for fabricating the same | |
KR20060001165A (en) | Thin film transistor substrate of horizontal electronic field applying type and fabricating method thereof | |
KR100275213B1 (en) | in-plane switching mode liquid crystal display device and method of making the same | |
KR100357217B1 (en) | Multi-domain liquid crystal display device | |
KR100293431B1 (en) | In-plane switching mode liquid crystal display device | |
KR100538293B1 (en) | Method of manufacturing flat drive liquid crystal display | |
KR100304917B1 (en) | LCD and its manufacturing method | |
KR100313951B1 (en) | Multi-domain liquid crystal display device | |
KR100313950B1 (en) | Multi-domain liquid crystal display device | |
KR19990012990A (en) | Transverse electric field liquid crystal display device and manufacturing method thereof | |
KR100951840B1 (en) | Liquid Crystal Display Device | |
KR101086121B1 (en) | In plane switching mode liquid crystal display device and method for fabricating thereof | |
KR19990024620A (en) | Complex field type liquid crystal display device | |
KR100282331B1 (en) | In-plane switching mode liquid crystal device | |
KR100487424B1 (en) | Hybrid switching mode liquid crystal display device and method of making the same | |
KR100956342B1 (en) | Thin film transistor array panel |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
N231 | Notification of change of applicant | ||
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20130619 Year of fee payment: 14 |
|
FPAY | Annual fee payment |
Payment date: 20140630 Year of fee payment: 15 |
|
FPAY | Annual fee payment |
Payment date: 20150818 Year of fee payment: 16 |
|
FPAY | Annual fee payment |
Payment date: 20160816 Year of fee payment: 17 |
|
LAPS | Lapse due to unpaid annual fee |