KR100293431B1 - In-plane switching mode liquid crystal display device - Google Patents

In-plane switching mode liquid crystal display device Download PDF

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KR100293431B1
KR100293431B1 KR1019970040215A KR19970040215A KR100293431B1 KR 100293431 B1 KR100293431 B1 KR 100293431B1 KR 1019970040215 A KR1019970040215 A KR 1019970040215A KR 19970040215 A KR19970040215 A KR 19970040215A KR 100293431 B1 KR100293431 B1 KR 100293431B1
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electrode
liquid crystal
substrate
crystal display
layer
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KR19990017316A (en
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배성준
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구본준, 론 위라하디락사
엘지.필립스 엘시디 주식회사
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    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1343Electrodes
    • G02F1/134309Electrodes characterised by their geometrical arrangement
    • G02F1/134363Electrodes characterised by their geometrical arrangement for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1335Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509Filters, e.g. light shielding masks
    • G02F1/133512Light shielding layers, e.g. black matrix
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1337Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
    • G02F1/133707Structures for producing distorted electric fields, e.g. bumps, protrusions, recesses, slits in pixel electrodes
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1337Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
    • G02F1/133711Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers by organic films, e.g. polymeric films
    • G02F1/133723Polyimide, polyamide-imide
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/136286Wiring, e.g. gate line, drain line
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/1368Active matrix addressed cells in which the switching element is a three-electrode device

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Liquid Crystal (AREA)
  • Geometry (AREA)

Abstract

PURPOSE: A liquid crystal display device of in plane switching mode is provided to maintain strong and equal switching to be formed between a data electrode and a common electrode, and to lower driving voltage by extending the data electrode and the common electrode. CONSTITUTION: On a first substrate(118) common electrode(113) gate, to be formed simultaneously with an electrode of thin film transistor, is formed and on the common electrode gate insulator film(120) is formed. Mountain shaped-walls(125) made of nonmetallic material is formed on the gate insulator film and along the shape of a wall data electrode(114) is extended to the second alignment film(124) formed on a second substrate(119). A second alignment film(123) is formed to all over the first substrate. The data electrode is equally extended to the second alignment film and the strength of the electric field is raised and therefore driving voltage can be lowered. Opening ratio is improved by making the width of the data electrode narrow.

Description

횡전계방식 액정표시소자{IN-PLANE SWITCHING MODE LIQUID CRYSTAL DISPLAY DEVICE}Transverse electric field liquid crystal display device {IN-PLANE SWITCHING MODE LIQUID CRYSTAL DISPLAY DEVICE}

본 발명은 횡전계방식 액정표시소자에 관한 것으로, 특히 데이터전극 및/또는 공통전극이, 이러한 두 전극이 형성된 기판과 대응하는 기판까지 연장된 횡전계방식 액정표시소자에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a transverse electric field liquid crystal display device, and more particularly, to a transverse electric field liquid crystal display device in which a data electrode and / or a common electrode extend to a substrate and a substrate on which these two electrodes are formed.

최근에는 종래의 TN방식(twisted nematic mode) 액정표시소자의 단점인 협소한 시야각 문제를 해결하기 위하여 여러 가지 새로운 방식, 예를 들면, 횡전계방식(IPS:in plane switching mode) 또는 OCB방식(optically compensated birefrigence mode) 등을 채용한 액정표시소자에 대한 연구가 활발하게 진행되고 있다. 이 가운데 상기 횡전계방식 액정표시소자는 종래의 TN방식 액정표시소자에 비해 시야각특성이 월등하게 우수하다.Recently, in order to solve the narrow viewing angle problem which is a disadvantage of the conventional TN (twisted nematic mode) liquid crystal display, various new methods, for example, an in-plane switching mode (IPS) or an OCB method (optically Research into liquid crystal display devices employing a compensated birefrigence mode) has been actively conducted. Among these, the transverse electric field type liquid crystal display device has superior viewing angle characteristics as compared to the conventional TN type liquid crystal display device.

시야각특성의 향상을 목적으로 하는 횡전계방식의 액정표시소자는 도 1에 나타내는 것과 같은 통상의 구조를 갖는다.The transverse electric field type liquid crystal display element for the purpose of improving the viewing angle characteristic has a conventional structure as shown in FIG.

도 1은 일반적인 횡전계방식 액정표시소자의 단위화소영역의 평면도로서, 제1기판 위에 배열되어 화소영역을 정의하는 데이터배선(10) 및 게이트배선(11)과, 상기한 게이트배선(11)과 평행하게 화소내에 배열된 공통배선(12)과 상기한 게이트배선(1)과 데이터배선(10)의 교차점에 배치된 박막트랜지스터와, 상기한 화소내에 데이터배선(10)과 대략 평행하게 배열된 데이터전극(14) 및 공통전극(13)으로 구성된다.1 is a plan view of a unit pixel area of a general transverse electric field type liquid crystal display device, and includes a data line 10 and a gate line 11 arranged on a first substrate to define a pixel area, and the gate line 11 and the gate line 11. A thin film transistor arranged at the intersection of the common wiring 12 arranged in parallel with the pixel and the gate wiring 1 and the data wiring 10, and data arranged substantially parallel to the data wiring 10 in the pixel. It consists of the electrode 14 and the common electrode 13.

도 2는 도 1의 A-A'선 단면도로서, 화소내의 공통전극(13)은 제1기판(18) 위에 형성되어 공통배선에 접속되며 데이터전극(14)은 게이트절연막(20) 위에 형성되어 박막트랜지스터의 드레인전극(17)에 접속된다. 박막트랜지스터(미도시), 데이터전극(14) 및 게이트절연막(20) 위에는 제1배향막(23)이 기판 전체에 걸쳐 형성되어 있다.FIG. 2 is a cross-sectional view taken along the line AA ′ of FIG. 1, in which the common electrode 13 in the pixel is formed on the first substrate 18 and connected to the common wiring, and the data electrode 14 is formed on the gate insulating film 20. It is connected to the drain electrode 17 of the thin film transistor. A first alignment layer 23 is formed over the entire substrate on the thin film transistor (not shown), the data electrode 14 and the gate insulating layer 20.

또한, 상기한 제1기판(18)과 대응하는 제2기판(19) 위에는 빛의 누설을 방지하는 차광층(미도시), R, G 및 B의 칼라필터소자로 이루어진 칼라필터층(미도시) 및 오버코트층(미도시)이 차례로 적층되어 있으며, 그 위에 상기 제1배향막(23)과 대응하는 제2배향막(24)이 기판 전쳉 걸쳐 형성되어 있다.In addition, a color filter layer (not shown) including a light blocking layer (not shown) and a color filter element of R, G, and B on the first substrate 18 and the corresponding second substrate 19 to prevent light leakage. And an overcoat layer (not shown) are sequentially stacked, and a second alignment film 24 corresponding to the first alignment film 23 is formed over the substrate.

전압이 인가되면, 도면에 나타내듯이, 상기 데이터전극(14)과 공통전극(13)사이에는 두 전극에 의한 횡전계가 형성되고, 이러한 횡전계에 의해 액정분자(22)는 등전위선을 따라 배열된다. 그러나, 상기 두 전극에 의한 전계는 상기 제2기판(19)쪽으로 갈수록 약해져 기판쪽에 근접한 액정은 매우 약한 전계의 영향을 받게 되고, 그 결과 액정분자의 균일한 배열이 어렵게 된다.When a voltage is applied, as shown in the figure, a transverse electric field is formed between the data electrode 14 and the common electrode 13 by two electrodes, and the liquid crystal molecules 22 are arranged along the equipotential line by the transverse electric field. do. However, the electric field by the two electrodes becomes weaker toward the second substrate 19, so that the liquid crystal near the substrate is affected by a very weak electric field, and as a result, the uniform arrangement of the liquid crystal molecules becomes difficult.

상기한 이유로 인하여, 균일한 액정분자의 배열을 위해서는 상기 두 전극간의 간격을 좁게 하거나, 액정층의 구동전압을 높여야 한다. 그러나, 두 전극간의 간격을 좁히는 것은 기술적으로 어려울 뿐만 아니라, 개구율을 고려할 때 바람직하지 못하다.For the above reason, in order to uniformly arrange the liquid crystal molecules, the distance between the two electrodes should be narrowed or the driving voltage of the liquid crystal layer should be increased. However, narrowing the gap between two electrodes is not only technically difficult, but also undesirable in view of the aperture ratio.

본 발명은 상기한 종래 기술의 문제점을 해결하기 위한 것으로, 데이터전극 및/또는 공통전극을 두 전극이 형성된 기판과 대응하는 기판까지 연장하므로써, 균일한 전계 형성이 가능한 횡전계방식 액정표시소자를 제공하는 것을 목적으로 한다.SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems of the prior art, and provides a transverse electric field type liquid crystal display device capable of forming a uniform electric field by extending a data electrode and / or a common electrode to a substrate and a substrate on which two electrodes are formed. It aims to do it.

본 발명의 다른 목적은, 상기한 구조에 의해 액정층의 구동전압을 감소시키는 것이다.Another object of the present invention is to reduce the drive voltage of the liquid crystal layer by the above structure.

본 발명의 또 다른 목적은, 상기한 액정표시소자의 제조시에 동일한 높이를 갖는 상기한 두 전극에 의해 균일한 액정층의 두께를 유지하는 것이다.It is still another object of the present invention to maintain a uniform thickness of the liquid crystal layer by the two electrodes having the same height at the time of manufacturing the liquid crystal display device.

상기한 목적을 달성하기 위하여, 본 발명에 따른 횡전계방식 액정표시소자는 제1 및 제2기판과, 제1기판 위에 형성되어 상기 게이트배선과 접속되는 게이트전극과, 상기 게이트전극 위에 적층된 SiNX또는 SiOX와 같은 물질로 이루어진 게이트절연막과, 상기 게이트절연막 위에 형성된 비정질 실리콘층과, 상기 비정질 실리콘 층 위에 형성된 불순물 비정질 실리콘층과, 상기한 불순물 비정질 실리콘층 위에 형성되어 데이터배선과 데이터전극에 각각 접속되는 소스전극 및 드레인전극으로 구성된다. 화소내의 공통전극은 제1기판 위에 형성되어 공통배선에 접속되며 데이터전극은 게이트절연막 위에 형성되어 박막트랜지스터의 드레인전극에 접속된다. 상기 데이터전극 및/또는 공통전극은 상기 제2기판까지 연장되어 있으며, 두 전극이 함께 연장되는 경우 두 전극의 높이는 동일하다. 이대, 상기 데이터전극 및/또는 공통전극의 형성전에 제1기판쪽에 상기 두 전극을 형성하기 위한 벽(wall)을 쌓고, 상기한 벽의 형태를 따라 두 전극이 형성된다. 박막트랜지스터 위에는 SiNX또는 SiOX와 같은 물질로 이루어진 보호막이 적층되어 있으며, 기판 전체에 걸쳐 제1배향막이 도포되고 배향방향이 결정된다. 계속해서 상기한 제1기판과 대응하는 제2기판 위에 상기 박막트랜지스터, 게이트배선, 데이터배선 및 공통배선 근처로 빛이 새는 것을 방지하는 차광층을 형성하고, 그 위에 순서대로 칼라필터층, 오버코트층, 대향전극 및 제2배향막을 형성한 후, 상기한 두 기판 사이에 광투과도 및 색변환을 고려하여 적절한 두께의 액정층을 형성한다.In order to achieve the above object, the transverse electric field type liquid crystal display device according to the present invention includes a first electrode and a second substrate, a gate electrode formed on the first substrate and connected to the gate wiring, and a SiN stacked on the gate electrode. A gate insulating film made of a material such as X or SiO X , an amorphous silicon layer formed on the gate insulating film, an impurity amorphous silicon layer formed on the amorphous silicon layer, and an impurity amorphous silicon layer formed on the data wiring and the data electrode It consists of a source electrode and a drain electrode respectively connected. The common electrode in the pixel is formed on the first substrate and connected to the common wiring, and the data electrode is formed on the gate insulating film and connected to the drain electrode of the thin film transistor. The data electrode and / or the common electrode extend to the second substrate. When the two electrodes extend together, the heights of the two electrodes are the same. Before the formation of the data electrode and / or the common electrode, a wall for forming the two electrodes is stacked on the first substrate side, and two electrodes are formed along the shape of the wall. A protective film made of a material such as SiN X or SiO X is stacked on the thin film transistor, and the first alignment layer is coated on the entire substrate and the orientation direction is determined. Subsequently, a light shielding layer is formed on the second substrate corresponding to the first substrate so as to prevent light leakage near the thin film transistor, the gate wiring, the data wiring, and the common wiring, and the color filter layer, the overcoat layer, After forming the counter electrode and the second alignment layer, a liquid crystal layer having an appropriate thickness is formed between the two substrates in consideration of light transmittance and color conversion.

상기한 제1 및 제2배향막은 폴리이미드(polyimide) 배향막을 도포하고 러빙을 실시하여 액정의 배향방향을 결정할 수도 있고, 폴리실록산(polysiloxane) 또는 예를 들면, PVCN-F(polyviny1 fluoro cinnamate)와 같은 PVCN(polyviny1 cinnamate)계 물질로 이루어진 광배향막에 광을 조사하여 결정할 수도 있다. 이때, 광의 조사는 편광되거나 또는 편광되지 않는 빛을 사용하여 1회 또는 그 이상을 실시하는 것이 가능하다.The first and second alignment layers may be coated with a polyimide alignment layer and subjected to rubbing to determine the alignment direction of the liquid crystal, and may be polysiloxane or polyviny1 fluoro cinnamate, for example, PVCN-F. The photoalignment film made of a polyviny1 cinnamate (PVCN) -based material may also be determined by irradiation with light. At this time, the irradiation of light can be performed once or more times using light that is polarized or not polarized.

도 1은, 일반적인 횡전계방식 액정표시소자의 평면도.1 is a plan view of a general transverse electric field type liquid crystal display device.

도 2는, 전계형성에 의한 액정의 배열을 나타내는 도 1의 A-A′선 단면도.FIG. 2 is a cross-sectional view along the line A-A 'in FIG. 1 showing the arrangement of liquid crystals by electric field formation; FIG.

도 3은, 본 발명의 제1실시예를 따르는 도면.3 is a view according to a first embodiment of the present invention;

도 4는, 본 발명의 제2실시예를 따르는 도면.4 is a view according to a second embodiment of the present invention;

도 5는, 본 발명의 제3실시예를 따르는 도면.5 is a diagram according to a third embodiment of the present invention;

- 도면의 주요 부분에 대한 부호의 설명 --Explanation of symbols for the main parts of the drawing-

113 : 공통전극 114 : 데이터전극113: common electrode 114: data electrode

118 : 제1기판 119 : 제2기판118: first substrate 119: second substrate

120 : 게이트절연막 122 : 액정분자120: gate insulating film 122: liquid crystal molecules

123 : 제1배향막 124 : 제2배향막123: first alignment layer 124: second alignment layer

이하, 본 발명의 바람직한 실시예를 도면을 참조하여 상세하게 설명한다.Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings.

도 3은 본 발명의 제1실시예를 나타내는 도면으로서, 제1기판(118) 위에는 박막트랜지스터(미도시)의 게이트전극과 동시에 형성되는 공통전극(113)이, 상기 공통전극(113) 위에는 SiNX또는 SiOX와 같은 물질로 이루어진 게이트절연막(120)이 형성되어 있고, 상기 게이트절연막(120) 위에는 비금속물질로 이루어진 벽(125)이 산형상으로 형성되어 있으며, 이러한 벽(125)의 형태를 따라 데이터전극(114)이 제2기판(119) 위에 형성된 제2배향막(124)까지 연장되어 있고, 그리고 상기 제1기판(118)의 전체 영역에 걸쳐 제1배향막(123)이 형성되어 있다.3 is a diagram illustrating a first embodiment of the present invention, in which a common electrode 113 formed simultaneously with a gate electrode of a thin film transistor (not shown) is formed on a first substrate 118, and a SiN is formed on the common electrode 113. A gate insulating film 120 made of a material such as X or SiO X is formed, and a wall 125 made of a non-metallic material is formed in an acid shape on the gate insulating film 120, and the shape of the wall 125 is formed. Accordingly, the data electrode 114 extends to the second alignment layer 124 formed on the second substrate 119, and the first alignment layer 123 is formed over the entire area of the first substrate 118.

상기한 구조에 의하면, 상기 데이터전극(114)을 제2배향막(124)까지 동일한 크기로 연장하여 상기 공통전극(113)과의 사이에서 형성되는 전계의 세기를 증가시킬 수 있어 액정층의 구동전압을 낮추는 것이 가능하고, 상기 데이터전극(114)의폭을 좁게 형성하므로써 개구율을 향상시킬 수 있다.According to the above structure, the data electrode 114 may extend to the second alignment layer 124 in the same size to increase the intensity of the electric field formed between the common electrode 113 and the driving voltage of the liquid crystal layer. Can be reduced, and the aperture ratio can be improved by narrowing the width of the data electrode 114.

또한, 각 화소영역에서 균일한 높이를 갖는 상기 복수의 데이터전극(114)에 의해 상기 제1기판(118)과 제2기판(119) 사이의 간경이, 즉 액정층이 두께가 균일하게 유지될 수 있으므로, 액정층의 두께를 균일하게 유지하기 위한, 예를 들면 스페이서와 같은, 별도의 수단을 필요로 하지 않는다.In addition, the thickness between the first substrate 118 and the second substrate 119, that is, the liquid crystal layer, may be maintained uniformly by the plurality of data electrodes 114 having a uniform height in each pixel region. As a result, no separate means, such as a spacer, for maintaining the thickness of the liquid crystal layer uniformly is necessary.

상기한 제1배향막(123) 및 제2배향막(124)의 배향방향은 폴리이미드(polyimide) 계열의 배향막을 도포하고 러빙을 실시하여 결정할 수도 있고, 폴리실록산 또는 PVCN계 물질로 이루어진 광배향막에 광을 조사하여 결정할 수도 있다. 이때, 광의 조사는 편광되거나 또는 편광되지 않는 빛을 사용하여 1회 또는 그 이상을 실시하는 것이 가능하다.The alignment direction of the first alignment layer 123 and the second alignment layer 124 may be determined by applying a polyimide-based alignment layer and rubbing, and applying light to an optical alignment layer made of polysiloxane or PVCN-based material. You can also investigate and decide. At this time, the irradiation of light can be performed once or more times using light that is polarized or not polarized.

도 4는 본 발명의 제2실시예를 나타내는 도면으로서, 제1기판(118) 위에는 비금속물질로 이루진 벽(125)이 좁은 폭으로 형성되어 있으며, 이러한 벽(125)의 형태를 따라 공통전극(113)이 제2기판(119) 위에 형성된 제2배향막(124)까지 동일한 크기로 연장되어 있고, 상기 공통전극(113) 위에는 SiNX또는 SiOX와 같은 물질로 이루어진 게이트절연막(120)이 형성되어 있고, 상기 게이트절연막(120) 위에는 데이터전극(114)이 형성되어 있으며, 그리고 상기 제1기판(118)의 전체 영역에 걸쳐 제1배향막(123)이 형성되어 있다.FIG. 4 is a view showing a second embodiment of the present invention, wherein a wall 125 made of a nonmetallic material is formed on the first substrate 118 in a narrow width, and a common electrode is formed along the shape of the wall 125. The 113 extends in the same size to the second alignment layer 124 formed on the second substrate 119, and a gate insulating layer 120 made of a material such as SiN X or SiO X is formed on the common electrode 113. The data electrode 114 is formed on the gate insulating layer 120, and the first alignment layer 123 is formed over the entire area of the first substrate 118.

상기한 구조에 의하면, 상기 공통전극(113)을 제2배향막(124)까지 연장하여 상기 데이터전극(114)과의 사이에서 형성되는 전계의 세기를 증가시킬 수 있어 액정층의 구동전압을 낮추는 것이 가능하고, 상기 공통전극(113)이 좁은 폭으로 형성되므로 개구율을 높일 수 있다.According to the above structure, it is possible to extend the common electrode 113 to the second alignment layer 124 to increase the strength of the electric field formed between the data electrode 114 to lower the driving voltage of the liquid crystal layer. In addition, since the common electrode 113 is formed to have a narrow width, the aperture ratio may be increased.

또한, 각 화소영역에서 균일한 높이를 갖는 상기 복수의 공통전극(113)에 의해 상기 제1기판(118)과 제2기판(119) 사이의 간격이, 즉 액정층의 두께가 균일하게 유지될 수 있으므로, 액정층의 두께를 균일하게 유지하기 위한, 예를 들면 스페이서와 같은, 별도의 수단을 필요로 하지 않는다.In addition, the gap between the first substrate 118 and the second substrate 119 may be maintained uniformly by the plurality of common electrodes 113 having a uniform height in each pixel area. As a result, no separate means, such as a spacer, for maintaining the thickness of the liquid crystal layer uniformly is necessary.

상기한 제1배향막(123) 및 제2배향막(124)의 배향방향은 상기 본 발명의 제1실시예와 같은 방법으로 결정할 수 있다.The alignment directions of the first alignment layer 123 and the second alignment layer 124 may be determined in the same manner as in the first embodiment of the present invention.

도 5는 본 발명의 제3실시예를 나타내는 도면으로서, 제1기판(118) 위에는 비금속물질로 이루어진 벽(125)이 산형상으로 형성되어 있으며, 이러한 벽(125)의 형태를 다라 공통전극(113)이 제2기판(119) 위에 형성된 제2배향막(124)까지 동일한 크기로 연장되어 있으며, 상기 공통전극(113) 위에는 SiNX또는 SiOX와 같은 물질로 이루어진 게이트절연막(120)이 형성되어 있고, 상기 게이트절연막(120) 위에는 데이트전극(114)이 상기 공통전극(113)과 같은 높이로 제2기판(119)위에 형성된 제2배향막(124)까지 연장되어 있으며, 그리고 상기 제1기판(118)의 전체 영역에 걸쳐 제1배향막(123)이 형성되어 있다.FIG. 5 is a view showing a third embodiment of the present invention. A wall 125 made of a non-metallic material is formed in an acid shape on a first substrate 118, and the common electrode ( 113 extends in the same size to the second alignment layer 124 formed on the second substrate 119, and a gate insulating layer 120 made of a material such as SiN X or SiO X is formed on the common electrode 113. The date electrode 114 extends on the gate insulating layer 120 to the second alignment layer 124 formed on the second substrate 119 at the same height as the common electrode 113. The first alignment layer 123 is formed over the entire region of 118.

상기한 구조에 의하면, 상기 공통전극(113) 및 데이터전극(114)을 제2배향막(124)까지 연장하여 상기 두 전극 사이에서 형성된는 전계의 세기를 균일하게 유지하면서, 전체 전계의 세기를 증가시킬 수 있으므로, 액정층의 구동전압을낮추는 것이 가능하고, 산형상의 벽(125)을 따라 형성된 제1배향막(123)에 의해 측면에서 액정배향의 왜곡을 감소시키는 것이 가능하다.According to the above structure, the common electrode 113 and the data electrode 114 extend to the second alignment layer 124 to increase the intensity of the entire electric field while maintaining the uniformity of the electric field formed between the two electrodes. Therefore, it is possible to lower the driving voltage of the liquid crystal layer and to reduce the distortion of the liquid crystal alignment on the side surface by the first alignment film 123 formed along the acidic wall 125.

또한, 각 화소영역에서 균일한 높이를 갖는 상기 복수의 공통전극(113) 및 데이터전극(114)에 의해 상기 제1기판(118)과 제2기파(119) 사이의 간격이, 즉 액정층의 두께가 균일하게 유지될 수 있으므로, 액정층의 두께를 균일하게 유지하기 위한 별도의 수단을 필요로 하지 않는다.In addition, the gap between the first substrate 118 and the second wave 119 is defined by the plurality of common electrodes 113 and the data electrodes 114 having a uniform height in each pixel area. Since the thickness can be kept uniform, no separate means for maintaining the thickness of the liquid crystal layer uniformly is required.

상기한 제1배향막(123) 및 제2배향막(124)의 배향방향은 상기 본 발명의 제1실시예 및 제2실시예와 같은 방법으로 결정할 수 있다.The alignment directions of the first alignment layer 123 and the second alignment layer 124 may be determined in the same manner as in the first and second embodiments of the present invention.

본 발명의 제1, 2 및 제3실시예를 따르는 횡전계방식 액정표시소자는, 데이터전극 및/또는 공통전극을 두 전극이 형성된 기판과 대응하는 기판까지 연장하므로써, 두 전극 사이에 형성되는 전계의 세기를 강하고 균일하게 유지할 수 있으며, 이것에 의해 액정층의 구동전압을 감소시키는 것이 가능하다.In the transverse electric field type liquid crystal display device according to the first, second and third embodiments of the present invention, an electric field formed between two electrodes by extending the data electrode and / or the common electrode to the substrate on which the two electrodes are formed and the corresponding substrate. It is possible to keep the intensity of the electrode strong and uniform, whereby it is possible to reduce the driving voltage of the liquid crystal layer.

또한, 상기한 액정표시소자의 제조시에 상기한 구조를 취하므로써 스페이서를 필요로 하지 않고 균일한 액정층의 두께를 유지하는 것이 가능하다.In addition, by taking the above-described structure at the time of manufacturing the liquid crystal display device, it is possible to maintain a uniform thickness of the liquid crystal layer without the need for a spacer.

Claims (11)

제 1 및 제 2 기판과,The first and second substrates, 상기 제 1 기판 위에 종횡으로 배열되어 화소영역을 정의하는 데이터 배선 및 게이트 배선과,Data lines and gate lines arranged vertically and horizontally on the first substrate to define pixel regions; 상기 게이트 배선과 평행하며 상기 화소영역 내에 형성된 공통배선과,A common wiring parallel to the gate wiring and formed in the pixel region; 상기 게이트 배선과 공통배선의 교차점에 형성되며, 게이트전극, 게이트 절연층, 반도체층 및 소스/드레인 전극으로 구성된 박막트랜지스터와,A thin film transistor formed at an intersection point of the gate line and the common line, the thin film transistor comprising a gate electrode, a gate insulating layer, a semiconductor layer, and a source / drain electrode; 상기 게이트 절연층 위에 형성되는 제 1 전극과,A first electrode formed on the gate insulating layer; 상기 게이트 전극과 동일 평면상에 형성된 제 2 전극과,A second electrode formed on the same plane as the gate electrode, 상기 제 1 기판과 제 2 기판 사이에 형성된 액정층으로 이루어지며,A liquid crystal layer formed between the first substrate and the second substrate, 상기 제 1 전극 또는 제 2 전극 중 적어도 하나가 상기 제 1 기판과 대향하는 제 2 기판까지 연장되는 것을 특징으로 하는 횡전계방식 액정표시소자.At least one of the first electrode or the second electrode extends to the second substrate facing the first substrate. 제 1 항에 있어서, 상기 제 1 전극이 데이터 전극이고, 제 2 전극이 공통전극인 것을 특징으로 하는 횡전계방식 액정표시소자.The transverse electric field liquid crystal display device according to claim 1, wherein the first electrode is a data electrode and the second electrode is a common electrode. 제 1 항에 있어서, 상기 제 1 전극 또는 제 2 전극의 높이가 이웃하는 각각의 제 1 전극 또는 제 2 전극의 높이와 같은 것을 특징으로 하는 횡전계방식 액정표시소자.The transverse electric field liquid crystal display device according to claim 1, wherein the height of the first electrode or the second electrode is equal to the height of each neighboring first electrode or the second electrode. 제 1 항에 있어서, 상기 화소영역내 배열된 공통배선과,The method of claim 1, further comprising: common wiring arranged in the pixel region; 상기 제 1 전극 및 제 2 전극 위에 형성된 제 1 배향막과, 그리고A first alignment layer formed on the first electrode and the second electrode, and 게이트 전극, 게이트 절연층, 반도체층 및 소스/드레인 전극으로 구성되어 상기 게이트 배선과 데이터 배선의 교차부분에 형성된 박막트랜지스터를 추가로 포함하는 것을 특징으로 하는 횡전계방식 액정표시소자.And a thin film transistor comprising a gate electrode, a gate insulating layer, a semiconductor layer, and a source / drain electrode formed at an intersection of the gate line and the data line. 제 4 항에 이어서, 상기 제 1 배향막이 광반응성물질인 것을 특징으로 하는 횡전계방식 액정표시소자.The transverse electric field liquid crystal display device according to claim 4, wherein the first alignment layer is a photoreactive material. 제 5 항에 있어서, 상기 광반응성물질이 폴리실록산계 물질 또는 PVCN(polyvinly cinnamate)계 물질인 것을 특징으로 하는 횡전계방식 액정표시소자.The transverse electric field liquid crystal display device of claim 5, wherein the photoreactive material is a polysiloxane material or a polyvinly cinnamate (PVCN) material. 제 4 항에 있어서, 상기 제 1 배향막이 폴리이미드(polyimide)인 것을 특징으로 하는 횡전계방식 액정표시소자.The transverse electric field liquid crystal display device according to claim 4, wherein the first alignment layer is polyimide. 제 1 항에 있어서, 상기 제 2 기판위에 형성되어 빛의 누설을 방지하는 차광층과,The light blocking layer of claim 1, further comprising: a light blocking layer formed on the second substrate to prevent leakage of light; 상기 차광층 위에 형성된 칼라필터층과,A color filter layer formed on the light shielding layer, 상기 칼라필터층 위에 형성된 오버코트층과, 그리고An overcoat layer formed on the color filter layer, and 상기 칼라필터층 위헤 형성된 제 2 배향막을 추가로 포함하는 것을 특징으로 하는 횡전계방식 액정표시소자.And a second alignment layer formed on the color filter layer. 제 8 항에 있어서, 상기 제 2 배향막이 광반응성물질인 것을 특징으로 하는 횡전계방식 액정표시소자.The transverse electric field liquid crystal display device according to claim 8, wherein the second alignment layer is a photoreactive material. 제 9 항에 있어서, 상기 광반응성물질이 폴리실록산계 물질 또는 PVCN(polyvinyl cinnamate)계 물질인 것을 특징으로 하는 횡전계방식 액정표시소자.10. The transverse electric field liquid crystal display device according to claim 9, wherein the photoreactive material is a polysiloxane material or a polyvinyl cinnamate (PVCN) material. 제 8 항에 있어서, 상기 제 2 배향막이 폴리이미드(polyimide)인 것을 특징으로 하는 횡전계방식 액정표시소자.10. The transverse electric field liquid crystal display device according to claim 8, wherein the second alignment layer is polyimide.
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