KR100955392B1 - In plane switching mode liquid crystal display device having improved aperture ratio - Google Patents

Abstract

The transverse electric field mode liquid crystal display device of the present invention is to improve the aperture ratio by maximizing the edge region of the electrode which produces the edge effect of the electric field, and includes a plurality of gate lines and data lines defining a plurality of pixels, and arranged in each pixel. And a common electrode and a pixel electrode which are disposed substantially parallel in the pixel to generate a transverse electric field, and whose edge region is curved.

Transverse electric field mode, common electrode, pixel electrode, edge effect, protective layer, protrusion, step, aperture ratio

Description

Transverse electric field mode liquid crystal display device with improved aperture ratio {IN PLANE SWITCHING MODE LIQUID CRYSTAL DISPLAY DEVICE HAVING IMPROVED APERTURE RATIO}

1A and 1B are views showing the structure of a conventional transverse electric field mode liquid crystal display device.

2A is a diagram showing the edge effect of an electrode when the electrode is formed on the same layer.

Figure 2b is a view showing the edge effect of the electrode when the curvature is formed in the edge region of the electrode formed on the same layer.

3 is a plan view of a transverse electric field mode liquid crystal display device according to an embodiment of the present invention.

4A is a cross-sectional view taken along the line II-II 'of FIG. 3.

4B is a cross-sectional view taken along the line III-III ′ of FIG. 3.

5 is a plan view of a transverse electric field mode liquid crystal display device according to another embodiment of the present invention.

6 is a plan view of a transverse electric field mode liquid crystal display device according to still another embodiment of the present invention.

Explanation of symbols on the main parts of the drawings

105,205,305 Common electrodes 107,207,307 Pixel electrodes

111, 211, 311: gate electrode 112, 212, 312: semiconductor layer

113,213,313 Source electrodes 114,214,314 Drain electrodes                 

120,130,220,230,320,330: Substrate 122,222,322: Gate insulating layer

124,224,324 Protective layer 126 Semiconductor pattern

227: metal pattern

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a transverse electric field mode liquid crystal display device, and more particularly to a transverse electric field mode liquid crystal display device capable of improving the aperture ratio by increasing the edge effect of a transverse electric field generated by an electrode.

Recently, with the development of various portable electronic devices such as mobile phones, PDAs, and notebook computers, there is a growing demand for flat panel display devices for light and thin applications. Such flat panel displays are being actively researched, such as LCD (Liquid Crystal Display), PDP (Plasma Display Panel), FED (Field Emission Display), VFD (Vacuum Fluorescent Display), but mass production technology, ease of driving means, Liquid crystal display devices (LCDs) are in the spotlight for reasons of implementation.

Such liquid crystal display devices have various display modes according to the arrangement of liquid crystal molecules. However, TN mode liquid crystal display devices are mainly used because of the advantages of easy monochrome display, fast response speed, and low driving voltage. In such a TN-mode liquid crystal display device, liquid crystal molecules oriented horizontally with respect to the substrate are almost perpendicular to the substrate when a voltage is applied. Therefore, there is a problem that the viewing angle is narrowed upon application of voltage due to the refractive anisotropy of the liquid crystal molecules.

In order to solve this viewing angle problem, liquid crystal display devices of various modes having wide viewing angle characteristics have recently been proposed, but among them, the liquid crystal display device of the lateral field mode (In Plane Switching Mode) is applied to actual production. It is produced. The IPS mode liquid crystal display device aligns liquid crystal molecules in a plane by forming at least one pair of electrodes arranged in parallel in a pixel to form a transverse electric field substantially parallel to the substrate.

1 is a view showing the structure of a conventional IPS mode liquid crystal display device. FIG. 1A is a plan view and FIG. 1B is a sectional view taken along the line II ′ of FIG. 1A. As shown in FIG. 1A, pixels of the liquid crystal panel 1 are defined by gate lines 3 and data lines 4 arranged vertically and horizontally. Although only the (n, m) th pixels are shown in the drawing, the actual liquid crystal panel 1 has N (> n) and M (> m) gate lines 3 and data lines 4, respectively. Are arranged so as to form N × M pixels over the entire liquid crystal panel 1. The thin film transistor 10 is formed at the intersection of the gate line 3 and the data line 4 in the pixel. The thin film transistor 10 includes a gate electrode 11 to which a scan signal is applied from the gate line 3, and a semiconductor layer formed on the gate electrode 11 and activated as a scan signal is applied to form a channel layer. 12 and a source electrode 13 and a drain electrode 14 formed on the semiconductor layer 12 and to which an image signal is applied through the data line 4. The image signal input from the outside is applied to the liquid crystal layer. do.                         

In the pixel, a plurality of common electrodes 5 and a pixel electrode 7 are arranged substantially parallel to the data line 4. In addition, a common line 16 connected to the common electrode 5 is disposed in the middle of the pixel, and a pixel electrode line 18 connected to the pixel electrode 7 is disposed on the common line 16. It overlaps with the common line 16. Storage capacitance is formed in the transverse electric field mode liquid crystal display by overlapping the common line 16 and the pixel electrode line 18.

In the IPS mode liquid crystal display device configured as described above, the liquid crystal molecules are aligned substantially in parallel with the common electrode 5 and the pixel electrode 7. When the thin film transistor 10 is operated to apply a signal to the pixel electrode 7, a transverse electric field substantially parallel to the liquid crystal panel 1 is generated between the common electrode 5 and the pixel electrode 7. Since the liquid crystal molecules rotate on the same plane along the transverse electric field, gray level inversion due to the refractive anisotropy of the liquid crystal molecules can be prevented.

The conventional IPS mode liquid crystal display device having the above structure will be described in more detail with reference to the cross-sectional view of FIG. 1B.

As shown in FIG. 1B, a gate electrode 11 is formed on the first substrate 20, and a gate insulating layer 22 is stacked over the entire first substrate 20. The semiconductor layer 12 is formed on the gate insulating layer 22, and the source electrode 13 and the drain electrode 14 are formed thereon. In addition, a passivation layer 24 is formed on the entire first substrate 20.

In addition, a plurality of common electrodes 5 are formed on the first substrate 20, and a pixel electrode 7 and a data line 4 are formed on the gate insulating layer 22 to form the common electrode 5. A transverse electric field is generated between the pixel electrodes 7.

The black matrix 32 and the color filter layer 34 are formed on the second substrate 30. The black matrix 32 is to prevent light leakage into an area where the liquid crystal molecules do not operate. As shown in the drawing, the black matrix 32 is formed between the region of the thin film transistor 10 and between the pixel and the pixel (ie, the gate line and the data line). Area). The color filter layer 34 is composed of R (Red), B (Blue), and G (Green) to realize actual colors.

The liquid crystal layer 40 is formed between the first substrate 20 and the second substrate 30 to complete the liquid crystal panel 1.

In the IPS mode liquid crystal display device having the above structure, a transverse electric field is formed between the common electrode 5 and the pixel electrode 7, and the liquid crystal molecules are driven along the transverse electric field. That is, in the IPS mode liquid crystal display device, an area where an actual image is implemented is an area between the common electrode 5 and the pixel electrode 7, and no image is implemented in the area where the common electrode 5 and the pixel electrode 7 are formed. Do not. Accordingly, there is a problem that the aperture ratio is lowered as compared with the conventional TN mode liquid crystal display device.

In the conventional IPS mode liquid crystal display device, the common electrode 5 and the pixel electrode 7 are formed on different layers, respectively. However, in the case where the common electrode 5 and the pixel electrode 7 are formed in different layers in this way, since the afterimage of the DC is generated on the screen by the transverse electric field generated between the layers, the image quality of the liquid crystal display device is deteriorated. There was.

 SUMMARY OF THE INVENTION The present invention has been made to solve the above-described problem, and the transverse electric field mode liquid crystal display having the aperture ratio improved by maximizing a region generating the edge effect of the electric field by forming a curvature in the edge regions of the common electrode and the pixel electrode generating the transverse electric field. It is an object to provide an element.

In order to achieve the above object, the transverse electric field mode liquid crystal display device according to the present invention comprises a plurality of gate lines and data lines defining a plurality of pixels, a driving element disposed in each pixel, and substantially parallel in the pixels. And a first electrode and a second electrode arranged to generate a transverse electric field, the curvature of which is formed in an edge region thereof.

The driving device is a thin film transistor, comprising: a gate electrode formed on a substrate, an insulating layer stacked over the entire substrate on which the gate electrode is formed, a semiconductor layer formed on the insulating layer, a source electrode and a drain electrode formed on the semiconductor layer; And a protective layer stacked over the entire substrate on which the source and drain electrodes are formed.

The first electrode and the second electrode are formed on the passivation layer or the gate insulation layer, and the curvature (or curve) is formed in the edge region by the protrusion (or the step). The projection of the protective layer is formed by a semiconductor pattern, a metal pattern formed on the gate insulating layer, or a metal pattern formed on the substrate. In addition, the protrusion of the protective layer may be formed by etching the protective layer to a different thickness using a diffraction mask.

The present invention provides an IPS mode liquid crystal display device having improved image quality. To this end, in the IPS mode LCD of the present invention, the common electrode and the pixel electrode are formed on the same layer. Therefore, since no charge is trapped in the insulating layer, it is possible to prevent the occurrence of DC afterimage on the screen. In particular, in the IPS mode liquid crystal display device of the present invention, by forming the common electrode and the pixel electrode on the protective layer, the strength of the transverse electric field can be prevented from being lowered by the insulating layer.

In addition, the present invention provides an IPS mode liquid crystal display device having an improved aperture ratio. To this end, curvature is formed in the edge region of the electrode generating the transverse electric field to improve the edge effect of the transverse electric field.

In general, when a transverse electric field occurs between two electrodes, as shown in FIG. 2A, a transverse electric field horizontal to the surface of the substrate (or the insulating layer 124) is formed in the region a between the two electrodes 105 and 107. Is formed and an electric field almost perpendicular to the substrate is formed in the upper regions c of the electrodes 105 and 107. The IPS mode liquid crystal display device displays an image by driving liquid crystal molecules in a direction horizontal to the substrate by a transverse electric field parallel to the substrate, so that the region c is driven vertically (along the vertical electric field) with the substrate. The positioned liquid crystal molecules cannot play any role in the image display. That is, only the region a between the electrodes 105 and 107 serves as the image display region, and this region a becomes the opening region.

On the other hand, since the electrodes 105 and 107 are arranged in parallel, the electric field is bent in the edge region b so that the direction of the electric field is formed at a constant angle with the surface of the substrate (edge effect of the electric field). Therefore, the liquid crystal molecules of the edge region b are oriented at an angle with the surface of the substrate by this electric field, which means that a certain amount of light is transmitted to the region. That is, due to the edge effect of the electric field, the electrodes 105 and 107 act as opening regions with a predetermined width so that the opening ratio between the common electrode 105 and the pixel electrode 107 becomes a + 2b instead of a. In general, when the common electrode 105 and the pixel electrode 107 are formed on the same layer, the width b of the edge region is about 1 μm, and thus an edge ratio improvement effect of about 2 μm can be obtained by the edge effect. Will be.

In the present invention, the edge effect is maximized to further improve the aperture ratio. In order to maximize the edge effect, it is necessary to maximize the edge region in which the edge effect of the electric field affecting the switching of the liquid crystal molecules is generated. In the present invention, as shown in FIG. The edge regions are maximized by forming electrodes 105, 107) where the edge regions are curved or curved in the edge regions. As the curvature is formed in the edge region, the formation region of the electric field forming an angle with the substrate surface increases, and as a result, the aperture ratio is improved. As shown in FIG. 2B, by forming curvature in the electrodes 105 and 107, the edge area b is increased to a size of about 2 μm, and the aperture ratio is much improved as compared with the case where the edge area b is 1 μm. Able to know.

Hereinafter, an IPS mode liquid crystal display device according to the present invention will be described in detail with reference to the accompanying drawings.

3 is a plan view illustrating a structure of an IPS mode liquid crystal display device according to an exemplary embodiment of the present invention. As shown in the figure, a thin film transistor 110 is formed in the pixel defined by the gate line 103 and the data line 104. The thin film transistor 110 includes a semiconductor layer 112 formed on the gate line 103, a source electrode 113 and a drain electrode 114 formed on the semiconductor layer 112, and the gate line 103. Acts as a gate electrode.

The common electrode 105 and the pixel electrode 107 are disposed substantially parallel in the pixel, and the common line 116 connected to the common electrode 105 is disposed above the pixel, and the pixel electrode 107 is disposed below the pixel. Are connected to the first and second pixel electrode lines 118a and 118b. The first pixel electrode line 118a and the second pixel electrode line 118b are connected through the contact hole 117, and the storage capacitor electrode 119 is interposed between the first pixel electrode 118a. And the accumulation capacity is formed.

FIG. 4A is a cross-sectional view taken along the line II-II 'of FIG. 3 and illustrates the structure of the thin film transistor 110 and the pixel. As shown in the figure, a thin film transistor is disposed on the first substrate 120 made of a transparent material such as glass. The thin film transistor includes a gate electrode 111 formed on the first substrate 120, a gate insulating layer 122 formed on the gate electrode, a semiconductor layer 112 formed on the gate insulating layer 122, and the semiconductor layer. The source electrode 113 and the drain electrode 114 formed on the 112 are formed, and the passivation layer 124 is formed on the thin film transistor.

In addition, a semiconductor layer (ie, a semiconductor pattern) 126 is formed on the gate insulating layer 122. The semiconductor layer 126 is formed when the semiconductor layer 112 of the thin film transistor is formed and is formed by a chemical vapor deposition (CVD) method. The formation of the semiconductor layer 112 as described above forms a protrusion (or step) on a portion of the protective layer 124, and the common electrode 105 and the pixel electrode 107 are formed on the protrusion.

The common electrode 105 and the pixel electrode 107 are formed by sputtering or evaporation, and may be formed of a transparent electrode such as indium tin oxide (ITO) or indium zinc oxide (IZO). It may be made of a metal such as Cu, Mo, Ta, Cr, Ti, Al or Al alloy.

The common electrode 105 and the pixel electrode 107 are disposed on the protrusions formed in the protective layer 124, thereby forming curvatures (or curves) in the edge regions of the common electrode 105 and the pixel electrode 107. Compared to the IPS mode liquid crystal display device in which the curvature is not formed in the common electrode 105 and the pixel electrode 107, an edge region in which an edge effect (electric field is bent) is increased.

4B is a cross-sectional view taken along the line III-III 'of FIG. 3. As shown in the figure, the storage capacitor electrode 119 is formed on the side of the gate line 103. The storage capacitor electrode 119 is formed of the same metal as the gate line 103, that is, the same metal as the gate electrode.

The first pixel electrode line 118a is formed on the storage capacitor electrode 119 with the gate insulating layer 122 interposed therebetween to form a storage capacitor. The first pixel electrode line 118a is formed of the same metal as the source electrode of the thin film transistor by the same process. In addition, a second pixel electrode line 118b is formed on the first pixel electrode line 118a with a protective layer 124 interposed therebetween. The second pixel electrode line 118b is connected to a pixel electrode 107 arranged in a pixel, and made of the same material as the pixel electrode 107 and through a contact hole 117 formed in the protective layer 124. It is connected to the first pixel electrode line 118a.

In practice, the first pixel electrode line 118a may be omitted. In this case, since the second pixel electrode line 118b overlaps the storage capacitor electrode 119 with the protective layer 124 and the gate insulating layer 122 interposed therebetween, the storage capacitor can be formed. However, in this case, since two insulating layers are located, it is not possible to form a storage capacitor of a desired size. Therefore, as shown in the figure, it may be preferable to include the first pixel electrode line 118a. In addition, the first pixel electrode line 118a may be omitted, and the storage capacitor electrode 119 may be formed on the gate insulating layer 122.

The second substrate 130 is formed with a black matrix 132 for preventing light from being transmitted to an image non-display area such as a thin film transistor region or pixels and a color filter layer 134 for implementing color. The liquid crystal layer 140 is formed between the first substrate 120 and the second substrate 130.

As described above, in the IPS mode liquid crystal display device of the present embodiment, protrusions are formed on the protective layer 124 thereon by the semiconductor layer 126 formed on the gate insulating layer 122, and the common electrode 105 and the pixel electrode are formed. 107 is formed on the protrusion. Therefore, a curvature is formed in the edge regions of the common electrode 105 and the pixel electrode 107, and this curvature serves to increase the width of the edge region where the electric field is bent. Thus, the common electrode 105 and the pixel electrode 107 The opening ratio is improved by the curvature of the edge region.

In the above embodiment, the semiconductor layer is formed on the gate insulating layer to form protrusions in the protective layer, thereby forming curvature in the edge regions of the common electrode and the pixel electrode. However, the greatest feature of the present invention is that curvature is formed in the edge regions of the common electrode and the pixel electrode. In order to form such curvature, the thicknesses of the center and edge regions of the common electrode and the pixel electrode may be different, or protrusions (or steps) may be formed on the layer where the common electrode and the pixel electrode are formed.

In the IPS mode liquid crystal display device having the structure shown in Fig. 4A, a semiconductor layer is formed on the gate insulating layer so as to form protrusions on the layer (i.e., the protective layer) on which the common electrode and the pixel electrode are formed. It is not limited. That is, the IPS mode liquid crystal display device of the present invention may have any structure as long as it can form curvature in the edge regions of the common electrode and the pixel electrode.

5 is a cross-sectional view illustrating a structure of an IPS mode liquid crystal display device according to another exemplary embodiment of the present invention. In the IPS mode liquid crystal display device shown in the drawing, a metal layer (ie, a metal pattern) 227 is formed on the gate insulating layer 222 to form curvature in the edge regions of the common electrode 205 and the pixel electrode 207. As a result, protrusions were formed on the protective layer 224. That is, the metal layer 227 is used instead of the semiconductor layer of the IPS mode liquid crystal display shown in FIG. 4A. The metal layer 227 is formed by the same process when forming the source electrode 213 and the drain electrode 214 of the thin film transistor, and is the same metal as the source electrode 213 and the drain electrode 214, for example, Cr. , Metal such as Mo, Ta, Cu, Ti, Al, or Al alloy.

Although not shown in the figure, a metal layer is formed on the first substrate 220 instead of the gate insulating layer 222 to form protrusions on the protective layer 224, and the common electrode 205 and the pixel electrode are formed by the protrusions. By forming a curvature in the edge region 207, the aperture ratio can be improved. In this case, the metal layer formed on the first substrate 220 is formed by the same process as the gate electrode 211 of the thin film transistor, the same metal as the gate electrode 211, for example, Cu, Mo, Ta, Cr, It is made of Ti, Al or Al alloy.                     

Of course, when the metal layer is formed on the first substrate 220, since the gate insulating layer and the protective layer are formed on the metal layer, the thickness of the protrusion of the protective layer may be smaller than in the case where the protective layer is formed on the metal layer. In addition, it is possible to provide a curvature having a desired size to the common electrode and the pixel electrode, and thus an increase of a desired edge region may be expected.

In the above-described embodiment of the present invention, the semiconductor layer or the metal layer is formed under the protective layer to form protrusions in the protective layer, thereby giving curvature to the edge regions of the common electrode and the pixel electrode. As such, the reason for forming the protrusions on the protective layer by forming a separate layer is to simplify the process. That is, the semiconductor layer or the metal layer may be formed during the thin film transistor process. Therefore, an additional process for forming the protrusions of the protective layer is not required, thereby simplifying the manufacturing process. In addition, since the semiconductor layer or the metal layer uses a material used in the thin film transistor as it is, there is an advantage that it is possible to prevent an increase in manufacturing cost.

However, the method of forming the curvature in the edge region of the common electrode and the pixel electrode by forming a separate layer as described above has the following disadvantages. The semiconductor layer or the metal layer is formed by the same process as the thin film transistor. Therefore, the thickness of the semiconductor layer and the metal layer must be limited to a certain size, which means that the thickness of the protrusions formed on the protective layer is limited. Therefore, the curvatures of the common electrode and the pixel electrode disposed on the protrusions of the protective layer may be limited to a certain size.

On the other hand, the curvature of the edge region of the common electrode and the pixel electrode must vary depending on various conditions such as the size of the IPS liquid crystal display, the width of the electrode, the intensity of the applied voltage, and the characteristics of the liquid crystal. This is because the edge effect of the electric field may affect the image quality of the liquid crystal display device. Therefore, the curvature of the edge region must be formed so as to not only provide the maximum aperture ratio improvement effect but also prevent deterioration of image quality.

By the way, when forming a curvature in the edge region of an electrode by forming a semiconductor layer or a metal layer, it was impossible to form curvature optimally because only the processus | protrusion of a protective layer is formed in fixed thickness.

6 is a view showing the structure of an IPS mode liquid crystal display device according to another embodiment of the present invention, and is proposed to solve the above problems. The structure of the IPS mode liquid crystal display device shown in the drawing has a structure substantially similar to that of the IPS mode liquid crystal display device shown in FIGS. 4A and 5. Therefore, the description of the same configuration is omitted, and only the other configuration will be described.

As shown in the figure, in the IPS mode liquid crystal display of this embodiment, protrusions are formed by varying the thickness of the protective layer 324 without a separate layer, and the common electrode 305 and the pixel electrode 307 are formed on the protrusions. Was formed to form curvature in the edge region. Different stacking thicknesses mean that the protective layers stacked at different thicknesses are etched at different thicknesses when the protective layers are stacked. Both of these methods may be applied to form protrusions in the protective layer, but a relatively simple method of etching the protective layer to different thicknesses is applied to the present invention. That is, after the protective layer 324 is formed, protrusions are formed on the protective layer 324 by varying the degree of etching of a region different from that of the common electrode 305 and the pixel electrode 307 using a diffraction mask. will be.

As described above, in this embodiment, the protrusion may be formed to a desired thickness by etching the protective layer 324. Therefore, since the curvature of the edge regions of the common electrode 305 and the pixel electrode 307 can be formed to a desired size according to a condition, not only can the aperture ratio be improved to the maximum but also the image quality can be prevented from being improved. Will be.

The above-described embodiments have a structure in which a common electrode and a pixel electrode are formed on a protective layer, and a curvature is formed in an edge region of the common electrode and a pixel electrode by protrusions formed in the protective layer, but is limited only to the structure of the present invention. It is not. The common electrode and the pixel electrode may be formed on the gate insulating layer. In this case, the protrusions may be formed in the gate insulating layer by the metal layer formed on the substrate.

As described above, in the IPS mode liquid crystal display device of the present invention, a curvature may be formed in the edging regions of the common electrode and the pixel electrode to increase an area where the electric field is bent on the electrode. Therefore, the area in which the liquid crystal molecules are driven increases according to the electric field, and as a result, the aperture ratio of the liquid crystal display device can be improved.

Claims (31)

A plurality of gate lines and data lines defining a plurality of pixels; A gate electrode formed in each pixel, a gate insulating layer stacked over the substrate on which the gate electrode is formed, a semiconductor layer formed on the gate insulating layer, a source electrode and a drain electrode formed on the semiconductor layer; A thin film transistor; A protective layer formed over the entire substrate on which the thin film transistor is formed; A pattern formed of a metal layer formed on the gate insulating layer or on the substrate or a semiconductor layer formed on the gate insulating layer to form protrusions on the protective layer; And A transverse electric field formed of the protective layer projections in the pixel and disposed substantially parallel to each other to generate a transverse electric field, the curvature of which is formed at an edge region thereof to form a transverse electric field in the edge region. Mode liquid crystal display device. The transverse electric field mode liquid crystal display device of claim 1, wherein the first electrode and the second electrode are made of indium tin oxide (ITO) or indium zinc oxide (IZO). The transverse electric field mode liquid crystal display of claim 1, wherein the first electrode and the second electrode are made of a material selected from the group consisting of Cu, Mo, Ta, Cr, Ti, Al, and Al alloys. delete delete delete delete delete delete The transverse electric field mode liquid crystal display device according to claim 1, wherein the semiconductor layer is formed by the same process as that of the semiconductor layer of the thin film transistor. delete The transverse electric field mode liquid crystal display device of claim 1, wherein the metal layer formed on the gate insulating layer is formed by the same process as the source electrode and the drain electrode of the thin film transistor. delete The transverse electric field mode liquid crystal display device of claim 1, wherein the metal layer formed on the substrate is formed by the same process as the gate electrode of the thin film transistor. delete The method of claim 1, A first electrode line to which the first electrode is connected; A second electrode line to which the second electrode is connected; And And a storage capacitor electrode overlapping the second electrode line with a gate insulating layer interposed therebetween to generate a storage capacitor. The transverse electric field mode liquid crystal display device of claim 16, wherein the second electrode line is formed on a protective layer. 18. The transverse electric field mode liquid crystal display device of claim 17, wherein the storage capacitor electrode is formed on a substrate or a gate insulating layer. The method of claim 16, wherein the second electrode line, A first line formed over the gate insulating layer; And And a second line formed on the passivation layer and connected to the first line through a contact hole formed in the passivation layer. 20. The lateral field mode liquid crystal display device of claim 19, wherein the storage capacitor electrode is formed on a substrate. delete delete delete delete delete delete delete delete delete delete delete

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