KR19990024620A - Complex field type liquid crystal display device - Google Patents
Complex field type liquid crystal display device Download PDFInfo
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- KR19990024620A KR19990024620A KR1019970045837A KR19970045837A KR19990024620A KR 19990024620 A KR19990024620 A KR 19990024620A KR 1019970045837 A KR1019970045837 A KR 1019970045837A KR 19970045837 A KR19970045837 A KR 19970045837A KR 19990024620 A KR19990024620 A KR 19990024620A
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
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- G02F1/134363—Electrodes characterised by their geometrical arrangement for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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- G02F1/133707—Structures for producing distorted electric fields, e.g. bumps, protrusions, recesses, slits in pixel electrodes
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
- G02F1/133711—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers by organic films, e.g. polymeric films
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- G—PHYSICS
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
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- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
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Abstract
본 발명에 따른 복합전계방식 액정표시소자는 제1기판에 종횡으로 배열된 게이트배선 및 데이터배선과, 상기 데이터배선 및 게이트배선의 교차점에 형성된 박막트랜지스터와, 상기 게이트배선에 평행하게 형성된 공통배선과, 상기 데이터배선과 교대로 평행하게 형성되어 횡전계를 인가하는 적어도 한쌍의 제1전극 및 제2전극과, 상기 박막트랜지스터 및 제1 및 제2전극 위에 형성된 보호막과, 제2기판 위에 형성되어 상기 제1 및 제2전극과 경사전계를 형성하는 복수의 대향전극과, 그리고 상기 제1기판과 제2기판 사이에 형성된 액정층으로 이루어진다.According to an exemplary embodiment of the present invention, a multi-field liquid crystal display device includes a gate wiring and a data wiring arranged vertically and horizontally on a first substrate, a thin film transistor formed at an intersection point of the data wiring and the gate wiring, and a common wiring formed parallel to the gate wiring. At least one pair of first and second electrodes formed alternately in parallel with the data line to apply a transverse electric field, a protective film formed on the thin film transistor and the first and second electrodes, and formed on the second substrate. And a plurality of counter electrodes forming a first and second electrodes and an inclined electric field, and a liquid crystal layer formed between the first substrate and the second substrate.
Description
본 발명은 복합전계방식 액정표시소자에 관한 것으로, 특히 횡전계를 형성하는 두 전극이 형성된 기판과 대응하는 기판 상에 형성된 적어도 하나의 대향전극에 의해 경사전계를 형성한 복합전계방식 액정표시소자에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a composite field type liquid crystal display device, and more particularly, to a composite field type liquid crystal display device having a gradient electric field formed by a substrate having two electrodes forming a transverse electric field and at least one counter electrode formed on a corresponding substrate. It is about.
박막트랜지스터 액정표시소자(thin film transistor-liquid crystal display device)에서는 대면적화가 강력하게 요구되고 있지만, 시야각에 따라 콘트라스트비가 변하는 문제가 있었다. 이러한 문제를 해결하기 위해, 광보상판이 장착된 트위스트네마틱(twisted nematic) 액정표시소자, 멀티도메인(multi-domain) 액정표시소자 등과 같은 여러가지 액정표시소자가 제안되고 있지만, 이러한 여러가지 액정표시소자로는 시야각에 따라 콘트라스트비의 저하와 색상이 변하는 문제를 해결하기 힘든 실정이다.In a thin film transistor-liquid crystal display device, a large area is strongly required, but there is a problem in that the contrast ratio changes depending on the viewing angle. In order to solve this problem, various liquid crystal display devices such as a twisted nematic liquid crystal display device equipped with an optical compensation plate, a multi-domain liquid crystal display device, and the like have been proposed. It is difficult to solve the problem of lowering the contrast ratio and changing color depending on the viewing angle.
상기한 문제를 해결하고자, 최근에는 광시야각을 실현하기 위해 제안되는 다른 방식의 액정표시장치인 횡전계방식(in-plane switching mode)의 액정표시장치가 JAPAN DISPLAY 92 P547, 일본특허 특개평 7-36058, 일본특허 특개평 7-225538, ASIA DISPALY 95 P107 등에 개시되어 있다.In order to solve the above-mentioned problem, the liquid crystal display device of the in-plane switching mode, which is another liquid crystal display device recently proposed to realize the wide viewing angle, is JAPAN DISPLAY 92 P547, Japanese Patent Laid-Open No. 7- 36058, Japanese Patent Laid-Open No. 7-225538, ASIA DISPALY 95 P107, and the like.
도 1은 종래 횡전계방식 액정표시소자의 단위화소의 평면도로서, 제1기판 위에 배열되어 화소영역을 정의하는 데이터배선(1) 및 게이트배선(2)과, 상기한 게이트배선(2)과 평행하게 화소내에 배열된 공통배선(5)과, 상기한 게이트배선(2)과 데이터배선(1)의 교차점에 배치된 박막트랜지스터와, 상기한 화소내에 데이터배선(1)과 대략 평행하게 배열된 데이터전극(19) 및 공통전극(11)으로 구성된다.1 is a plan view of a unit pixel of a conventional transverse electric field type liquid crystal display device, which is arranged on a first substrate to define a pixel area and a gate line 2 and parallel to the gate line 2 described above. The common wiring 5 arranged in the pixel, the thin film transistor arranged at the intersection of the gate wiring 2 and the data wiring 1, and the data arranged substantially parallel to the data wiring 1 in the pixel. It consists of the electrode 19 and the common electrode 11.
도 2는 도 1의 A-A'선 단면도로서 도면에 나타낸 바와 같이, 박막트랜지스터는 제1기판(3) 위에 형성되어 상기 게이트배선(2)과 접속되는 게이트전극(10)과, 상기 게이트전극(10) 위에 적층된 SiNx 또는 SiOx와 같은 물질로 이루어진 게이트절연막(13)과, 상기 게이트절연막(13) 위에 형성된 비정질 실리콘층(15)과, 상기 비정질 실리콘층(15) 위에 형성된 불순물 비정질 실리콘층(16)과, 상기한 불순물 비정질 실리콘층(16) 위에 형성되어 데이터배선(1)과 데이터전극(19)에 각각 접속되는 소스전극(17) 및 드레인전극(18)으로 구성된다. 화소내의 공통전극(11)은 제1기판 위에 형성되어 공통배선에 접속되며 데이터전극(19)은 게이트절연막(13) 위에 형성되어 박막트랜지스터의 드레인전극(18)에 접속된다. 박막트랜지스터, 데이터전극(19) 및 게이트절연막(13) 위에는 SiNx 또는 SiOx와 같은 물질로 이루어진 보호막(20)이 기판 전체에 걸쳐 적층되어 있으며, 그 위에 제1배향막(미도시)이 도포되고 배향방향이 결정된다.2 is a cross-sectional view taken along line AA ′ of FIG. 1, wherein the thin film transistor is formed on the first substrate 3 and is connected to the gate wiring 2 and the gate electrode 10. (10) a gate insulating film 13 made of a material such as SiNx or SiOx laminated on the layer, an amorphous silicon layer 15 formed on the gate insulating film 13, and an impurity amorphous silicon layer formed on the amorphous silicon layer 15 And a source electrode 17 and a drain electrode 18 formed on the impurity amorphous silicon layer 16 and connected to the data wiring 1 and the data electrode 19, respectively. The common electrode 11 in the pixel is formed on the first substrate and connected to the common wiring, and the data electrode 19 is formed on the gate insulating film 13 and connected to the drain electrode 18 of the thin film transistor. On the thin film transistor, the data electrode 19 and the gate insulating film 13, a protective film 20 made of a material such as SiNx or SiOx is stacked over the entire substrate, and a first alignment film (not shown) is applied thereon and an orientation direction is applied thereon. This is determined.
또한, 상기한 제1기판(3)과 대응하는 제2기판(4) 위에는 빛의 누설을 방지하는 차광층(6), R, G 및 B의 칼라필터소자로 이루어진 칼라필터층(7) 및 오버코트층(8)이 차례로 적층되어 있다.Further, on the first substrate 3 and the second substrate 4 corresponding to the above, the light shielding layer 6 which prevents light leakage, the color filter layer 7 made of color filter elements of R, G and B and the overcoat Layers 8 are stacked in sequence.
그러나, 상기한 종래 횡전계방식 액정표시소자는 데이터전극과 공통전극 사이에 보호막에 의한 부가용량과 게이트절연막에 의한 부가용량이 존재하므로 액정분자의 원활한 구동을 위해서는 이러한 부가용량을 감안한 높은 전압이 액정층에 인가되어야 한다. 또한, 하판에 편중된 전극 구조로 인하여 크로스토크(cross talk) 및 잔상 등이 생길 수 있고, 공통전극이 게이트전극과 동일한 물질, 예를 들면 Cr, Ta 등의 불투명 금속으로 형성되기 때문에 투과율이 저하된다는 문제점이 있었다.However, in the above-described conventional transverse electric field type liquid crystal display device, since an additional capacitance by a protective film and an additional capacitance by a gate insulating film exist between the data electrode and the common electrode, a high voltage considering the additional capacitance is required for the smooth driving of liquid crystal molecules. Should be applied to the layer. In addition, cross talk and afterimage may occur due to the electrode structure biased on the lower plate, and the transmittance decreases because the common electrode is made of the same material as the gate electrode, for example, an opaque metal such as Cr and Ta. There was a problem.
본 발명은 상기한 종래 기술의 문제점을 해결하기 위한 것으로, 횡전계를 인가하는 적어도 한쌍의 전극이 형성된 기판과 대응하는 기판 상에 상기 전극과 대응하는 전극군(電極群)을 형성하여 상/하기판 사이에 경사전계를 인가하는 액정층의 구동전압을 감소시킨 복합전계방식 액정표시소자를 제공하는 것을 목적으로 한다.The present invention is to solve the above problems of the prior art, by forming an electrode group corresponding to the electrode on the substrate corresponding to the substrate on which at least one pair of electrodes for applying the transverse electric field is formed An object of the present invention is to provide a composite field type liquid crystal display device having a reduced driving voltage of a liquid crystal layer applying a gradient electric field between plates.
본 발명의 다른 목적은, 상기한 전극군을 투명전극군으로 하여 광투과율을 향상시키는 것이다.Another object of the present invention is to improve light transmittance by using the above electrode group as a transparent electrode group.
상기한 목적을 달성하기 위하여, 본 발명에 따른 횡전계방식 액정표시소자는 제1기판 위에 형성되어 상기 게이트배선과 접속되는 게이트전극과, 상기 게이트전극 위에 적층된 게이트절연막과, 상기 게이트절연막 위에 형성된 비정질 실리콘층과, 상기 비정질 실리콘층위에 형성된 불순물 비정질 실리콘층과, 상기한 불순물 비정질 실리콘층 위에 형성되어 데이터배선과 데이터전극에 각각 접속되는 소스전극 및 드레인전극으로 구성된다. 또한, 화소내의 공통전극은 제1기판 위에 형성되어 공통배선에 접속되며 데이터전극은 게이트절연막 위에 형성되어 박막트랜지스터의 드레인전극에 접속된다. 상기한 박막트랜지스터 위에는 SiNx 또는 SiOx와 같은 물질로 이루어진 보호막이 적층되어 있으며, 기판 전체에 걸쳐 제1배향막이 도포되고 배향방향이 결정된다.In order to achieve the above object, the transverse electric field type liquid crystal display device according to the present invention comprises a gate electrode formed on a first substrate and connected to the gate wiring, a gate insulating film stacked on the gate electrode, and formed on the gate insulating film. And an amorphous silicon layer, an impurity amorphous silicon layer formed on the amorphous silicon layer, and a source electrode and a drain electrode formed on the impurity amorphous silicon layer and connected to the data wiring and the data electrode, respectively. Further, the common electrode in the pixel is formed on the first substrate and connected to the common wiring, and the data electrode is formed on the gate insulating film and connected to the drain electrode of the thin film transistor. A protective film made of a material such as SiNx or SiOx is stacked on the thin film transistor, and a first alignment layer is coated on the entire substrate, and an orientation direction is determined.
상기한 제1기판과 대응하는 제2기판 위에는 상기 박막트랜지스터, 게이트배선, 데이터배선 및 공통배선 근처로 빛이 새는 것을 방지하는 차광층을 형성하고, 그 위에 순서대로 칼라필터층, 오버코트층을 형성한다. 계속해서, 상기 차광층이 형성된 기판의 영역에는 제1대향전극을 형성하고, 상기 데이터전극과 대응하는 제2대향전극을 화소영역내에 형성하고, 기판 전체에 걸쳐 제2배향막을 형성한 후, 상기한 두 기판 사이에 액정층을 형성한다.On the second substrate corresponding to the first substrate, a light shielding layer is formed to prevent light leakage near the thin film transistor, the gate wiring, the data wiring, and the common wiring, and a color filter layer and an overcoat layer are sequentially formed thereon. . Subsequently, a first counter electrode is formed in a region of the substrate on which the light shielding layer is formed, a second counter electrode corresponding to the data electrode is formed in the pixel region, and a second alignment film is formed over the entire substrate. A liquid crystal layer is formed between one or two substrates.
도 1은, 종래 횡전계방식 액정표시소자의 평면도.1 is a plan view of a conventional transverse electric field type liquid crystal display device.
도 2는, 도 1의 A-A'선 단면도.FIG. 2 is a cross-sectional view taken along the line AA ′ of FIG. 1. FIG.
도 3은, 본 발명에 따른 액정표시소자의 평면도.3 is a plan view of a liquid crystal display device according to the present invention;
도 4는, 도 3의 B-B'선 단면도.4 is a cross-sectional view taken along the line BB ′ of FIG. 3.
도 5는, 종래 단일전계방식과 본 발명에 따른 복합전계방식의 전기광학적 특성을 나타내는 도면.5 is a view showing the electro-optical characteristics of the conventional single field method and the composite field method according to the present invention.
도면의 주요 부분에 대한 부호의 설명Explanation of symbols for the main parts of the drawings
103 : 제1기판 104 : 제2기판103: first substrate 104: second substrate
106 : 차광층 107 : 칼라필터층106: light shielding layer 107: color filter layer
108 : 오버코트층 110 : 게이트전극108: overcoat layer 110: gate electrode
111 : 공통전극 113 : 게이트절연막111: common electrode 113: gate insulating film
115 : 비정질 실리콘층 116 : 불순물 비정질 실리콘층115: amorphous silicon layer 116: impurity amorphous silicon layer
117 : 소스전극 118 : 드레인전극117 source electrode 118 drain electrode
119 : 데이터전극 120 : 보호막119: data electrode 120: protective film
122 : 제1대향전극 123 : 제2대향전극122: first counter electrode 123: second counter electrode
이하, 본 발명의 바람직한 실시예를 도면을 참조하여 상세하게 설명한다.Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings.
도 3 내지 도 4는 본 발명에 따른 횡전계방식 액정표시소자의 평면도 및 B-B'선 단면도로서, 본 발명의 액정표시소자는 기판(103) 위에 형성되어 게이트배선과 접속되는 Ta과 같은 불투명금속으로 이루어진 게이트전극(110)과, 상기 게이트전극(110) 위에 적층된 SiNx 또는 SiOx와 같은 물질로 이루어진 게이트절연막(113)과, 상기 게이트절연막(113) 위에 형성된 비정질 실리콘층(115)과, 상기 비정질 실리콘층(115) 위에 형성된 불순물 비정질 실리콘층(116)과, 상기한 불순물 비정질 실리콘층(116) 위에 형성되어 데이터배선과 데이터전극(119)에 각각 접속되는 소스전극(117) 및 드레인전극(118)으로 구성된다.3 to 4 are plan views and cross-sectional views taken along line B-B 'of the transverse electric field type liquid crystal display device according to the present invention, wherein the liquid crystal display device of the present invention is formed on a substrate 103 and is opaque such as Ta connected to a gate wiring. A gate electrode 110 made of metal, a gate insulating film 113 made of a material such as SiNx or SiOx stacked on the gate electrode 110, an amorphous silicon layer 115 formed on the gate insulating film 113, The source electrode 117 and the drain electrode formed on the impurity amorphous silicon layer 116 formed on the amorphous silicon layer 115 and on the impurity amorphous silicon layer 116 and connected to the data wiring and the data electrode 119, respectively. It consists of 118.
또한, 화소내의 공통전극(111)은 제1기판 위에 형성되어 공통배선에 접속되며 데이터전극(119)은 게이트절연막(113) 위에 형성되어 박막트랜지스터의 드레인전극(118)에 접속된다. 상기 박막트랜지스터 위에는 SiNx 또는 SiOx와 같은 물질로 이루어진 보호막(120)이 적층되어 있으며, 기판(103) 전체에 걸쳐 제1배향막(미도시)이 도포되고 배향방향이 결정된다.In addition, the common electrode 111 in the pixel is formed on the first substrate and connected to the common wiring, and the data electrode 119 is formed on the gate insulating film 113 and connected to the drain electrode 118 of the thin film transistor. A passivation layer 120 made of a material such as SiNx or SiOx is stacked on the thin film transistor, and a first alignment layer (not shown) is coated on the entire substrate 103 and an orientation direction is determined.
또한, 제2기판(104)에는 상기 박막트랜지스터, 게이트배선, 데이터배선 및 공통배선 근처로 빛이 새는 것을 방지하는 차광층(106)을 형성하고, 그 위에 컬러필터층(107), 오버코트층(108)을 형성한다. 계속해서, 상기 차광층(106)이 형성된 기판의 영역에는 ITO(indium tin oxide)와 같은 물질로 이루어진 제1대향전극(122)을 형성하고, 상기 데이터전극(119)과 대응하는 ITO(indium tin oxide)와 같은 물질로 이루어진 제2대향전극(123)을 화소영역내에 형성한다. 이때, 상기한 제2대향전극(123)은 도 3에 나타내듯이 제1기판(103)상에 형성된 이웃하는 데이터전극(119) 사이의 영역과 대응하는 기판의 영역에 형성하는데, 이것에 의해 상기 제1기판(103) 상에 형성된 데이터전극과의 복합전계가 형성된다. 그 후, 제2배향막(미도시)을 형성하고 상기한 두 기판 사이에 액정을 주입하면 본 발명에 따른 복합전계방식 액정표시소자가 완성된다.In addition, a light blocking layer 106 is formed on the second substrate 104 to prevent light leakage near the thin film transistor, the gate wiring, the data wiring, and the common wiring, and the color filter layer 107 and the overcoat layer 108 thereon. ). Subsequently, a first counter electrode 122 made of a material such as indium tin oxide (ITO) is formed in an area of the substrate on which the light blocking layer 106 is formed, and an indium tin corresponding to the data electrode 119 is formed. A second counter electrode 123 made of a material such as oxide) is formed in the pixel area. In this case, the second counter electrode 123 is formed in the region of the substrate corresponding to the region between the neighboring data electrodes 119 formed on the first substrate 103 as shown in FIG. A complex electric field with the data electrode formed on the first substrate 103 is formed. After that, a second alignment layer (not shown) is formed and a liquid crystal is injected between the two substrates to complete the composite field type liquid crystal display device according to the present invention.
상기한 제1배향막 및 제2배향막의 배향방향은 폴리이미드(polyimide) 계열의 배향막을 도포하고 러빙을 실시하여 결정할 수도 있고, 폴리실록산 또는 PVCN(polyvinyl cinnamate)계 물질로 이루어진 광배향막에 광을 조사하여 결정할 수도 있다. 이때, 광의 조사는 편광되거나 또는 편광되지 않은 빛을 사용하여 1회 또는 그 이상을 실시하는 것이 가능하다.The orientation direction of the first alignment layer and the second alignment layer may be determined by applying a polyimide-based alignment layer and rubbing, or irradiating light to an optical alignment layer made of polysiloxane or polyvinyl cinnamate (PVCN) -based material. You can also decide. At this time, the irradiation of light can be performed once or more times using light that is polarized or unpolarized.
도 5는 종래의 단일전계방식 액정표시소자와 본 발명에 따른 복합전계방식 액정표시소자의 광투과율과 전압과의 관계를 나타낸 것으로, 본 발명의 복합전계방식은 종래 단일전계방식과 비교하여 구동전압의 감소(약 0.5∼1 Volt) 뿐만 아니라 투과율의 향상(약 10∼20%)을 보이고 있다.5 shows the relationship between the light transmittance and the voltage of the conventional single field type liquid crystal display device and the composite field type liquid crystal display device according to the present invention. In addition to the decrease of about 0.5 to 1 Volt, the transmittance is improved (about 10 to 20%).
본 발명에 따른 복합전계방식 액정표시소자는 횡전계 및 경사전계를 인가하는 전극군에 의해 복합전계를 형성하므로써 액정층의 구동전압을 낮출 수 있을 뿐만 아니라, 한쪽 기판에 편중된 전극을 대응하는 기판에 분리 형성하므로써 크로스토크 및 잔상을 감소시킬 수 있고, 상기 분리 형성된 전극을 투명전극으로 하여 광투과율을 증가시키는 것이 가능하다.In the composite field type liquid crystal display device according to the present invention, not only can the driving voltage of the liquid crystal layer be lowered by forming the composite field by the electrode group applying the transverse electric field and the gradient electric field, but also the substrate corresponding to the electrode biased to one substrate The crosstalk and the afterimage can be reduced by forming them separately, and the light transmittance can be increased by using the separated electrodes as transparent electrodes.
Claims (16)
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KR1019970045837A KR100293433B1 (en) | 1997-09-04 | 1997-09-04 | Complex switching mode liquid crystal display device |
US09/143,624 US6549258B1 (en) | 1997-09-04 | 1998-08-28 | Hybrid switching mode liquid crystal display device |
JP24699498A JP4287514B2 (en) | 1997-09-04 | 1998-09-01 | Compound electric field type liquid crystal display element |
DE19839789A DE19839789B9 (en) | 1997-09-04 | 1998-09-01 | Liquid crystal display device |
GB9819255A GB2329062B (en) | 1997-09-04 | 1998-09-03 | A hybrid switching mode liquid crystal display device |
FR9811089A FR2767952B1 (en) | 1997-09-04 | 1998-09-04 | HYBRID SWITCHING LIQUID CRYSTAL DISPLAY |
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KR100378858B1 (en) * | 1999-06-16 | 2003-04-07 | 닛뽕덴끼 가부시끼가이샤 | Liquid crystal display and method of performing display operation |
KR100404292B1 (en) * | 2001-03-29 | 2003-11-03 | 가부시키가이샤 히타치세이사쿠쇼 | Liquid crystal display apparatus |
KR100500684B1 (en) * | 1999-12-29 | 2005-07-12 | 비오이 하이디스 테크놀로지 주식회사 | Method for fabricating liquid crystal display using 4-mask process |
KR100510565B1 (en) * | 2002-03-28 | 2005-08-26 | 엔이씨 엘씨디 테크놀로지스, 엘티디. | Liquid crystal display device |
KR100816333B1 (en) * | 2001-08-30 | 2008-03-24 | 삼성전자주식회사 | Color filter plate and thin film transistor plate for liquid crystal display, and methods for fabricating the plates |
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JPH0862586A (en) * | 1994-08-19 | 1996-03-08 | Matsushita Electric Ind Co Ltd | Liquid crystal display element |
JP3289099B2 (en) * | 1995-07-17 | 2002-06-04 | 株式会社日立製作所 | Active matrix type liquid crystal display device and manufacturing method thereof |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
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KR100378858B1 (en) * | 1999-06-16 | 2003-04-07 | 닛뽕덴끼 가부시끼가이샤 | Liquid crystal display and method of performing display operation |
KR100500684B1 (en) * | 1999-12-29 | 2005-07-12 | 비오이 하이디스 테크놀로지 주식회사 | Method for fabricating liquid crystal display using 4-mask process |
KR100404292B1 (en) * | 2001-03-29 | 2003-11-03 | 가부시키가이샤 히타치세이사쿠쇼 | Liquid crystal display apparatus |
KR100816333B1 (en) * | 2001-08-30 | 2008-03-24 | 삼성전자주식회사 | Color filter plate and thin film transistor plate for liquid crystal display, and methods for fabricating the plates |
KR100510565B1 (en) * | 2002-03-28 | 2005-08-26 | 엔이씨 엘씨디 테크놀로지스, 엘티디. | Liquid crystal display device |
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