KR19990006196A - Manufacturing method of semiconductor device - Google Patents

Abstract

The present invention relates to a method for manufacturing a semiconductor device capable of preventing a bridge phenomenon and a sccum phenomenon between conductive wirings.

The configuration of the present invention, providing a semiconductor substrate having a conductive film formed on the top; Forming a photoresist pattern having a predetermined shape on the conductive film; Patterning a conductive film in the form of the photoresist pattern; Oxidizing an etching residue between the patterned conductive film; And removing the photoresist pattern.

Description

Manufacturing method of semiconductor device

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor device, and more particularly, to a method for manufacturing a semiconductor device capable of preventing bridge phenomenon and scum phenomenon between conductive wirings.

In general, the wiring process of a semiconductor device is a process for electrically connecting the layers constituting the semiconductor device with the layers, and the electrically connecting medium includes polysilicon doped with impurities, polysilicon implanted with ion, aluminum and tungsten. Etc. are used.

Here, the conductive wiring process according to the conventional method will be described with reference to FIGS. 1A to 1C.

First, as shown in FIG. 1A, a conductive film 2 is formed on the semiconductor substrate 1 on which a MOS transistor or a DRAM device is formed to have a predetermined thickness. As described above, polysilicon doped with impurities, polysilicon implanted with ion, aluminum, a tungsten film, or the like may be used as the conductive film 2. Thereafter, a photoresist pattern 3 is formed on the conductive film 2 by a known photolithography process in order to form conductive wirings with a small gap therebetween. At this time, the photoresist pattern 3 is formed at the minimum distance d that can be formed by exposure equipment in order to achieve high integration of the semiconductor device.

Then, as shown in FIG. 1B, using this photoresist pattern 3, the conductive film 2 is etched to form the conductive wiring 2A. Here, the etching residues 4A and 4B are formed between the conductive wirings 2A during the etching process. This phenomenon is due to the fact that the conductive film is not completely etched during the etching process due to the small spacing of the conductive wirings 2A.

Thereafter, as shown in FIG. 1C, the photoresist pattern 3 is removed to complete the conductive wiring 2A.

However, the above etching residues 4A and 4B of FIG. 1C are formed in the form of lines, such as conductive wires, so as to short the adjacent conductive wires 2A or generate a leakage current between the conductive wires 2A. By doing so, the conductive wiring reliability is lowered.

Here, as described above, the phenomenon in which the etching residues 4A remain in a line shape between the conductive lines 2A, causing a decrease in reliability of the conductive lines, is called a bridge phenomenon.

Meanwhile, the etching by-product 4B remaining between the conductive lines 2A is called a scum phenomenon.

Accordingly, an object of the present invention is to solve the above-mentioned conventional problems, and to provide complete insulation between the conductive wirings 2A, thereby preventing a bridge phenomenon and a scum phenomenon between the conductive wirings 2A. To provide.

1A to 1C are diagrams for explaining a conductive wiring forming method of a semiconductor device according to a conventional method.

2A to 2C are views for explaining a method of forming conductive wirings in a semiconductor device according to a first embodiment of the present invention.

Explanation of symbols for the main parts of the drawings

1: Semiconductor Substrate 2: Conductive Wiring

2A: conductive wiring 3: photoresist pattern

4A, 4B: Etch Remnants

In order to achieve the above object of the present invention, the present invention provides a semiconductor substrate having a conductive film formed on top, forming a photoresist pattern having a predetermined shape on the conductive film; Patterning a conductive film in the form of the photoresist pattern; Oxidizing an etching residue between the patterned conductive film; And removing the photoresist pattern.

According to the present invention, a bridging phenomenon occurs between conductive wirings by selectively conducting a process of injecting oxygen ions or an ozone shower process between a conductive film etching process and a photoresist pattern removing process using a photoresist pattern. And scum phenomenon is prevented.

EXAMPLE

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

2A to 2C are views for explaining a method of manufacturing a semiconductor device for explaining the first embodiment of the present invention. For reference, in describing the configuration of the present embodiment, the same reference numerals are given to the same parts as those of the conventional technology described at the beginning of the specification.

[First Embodiment]

Referring to FIG. 2A, a conductive film 2 is formed on the semiconductor substrate 1 formed with a MOS transistor or a cell plate electrode of a DRAM device and an interlayer insulating film. As described above, polysilicon doped with impurities, polysilicon implanted with ion, aluminum, a tungsten film, or the like may be used as the conductive film 2. Thereafter, a photoresist pattern 3 is formed on the conductive film 2 by a known photolithography process in order to form conductive wirings with a small gap therebetween. At this time, the photoresist pattern 3 is formed at the minimum distance d that can be formed by exposure equipment in order to achieve high integration of the semiconductor device.

Then, as shown in Fig. 2B, using this photoresist pattern 3, the conductive film 2 is etched to form the conductive wiring 2A. At this time, when the conductive wires 2A are formed, the etching residues 4A and 4B may be formed between the conductive wires 2A due to the difference in the etching speed according to the interval between the conductive wires 2A. These etching residues 4A and 4B cause a phenomenon such as a short between the wirings between the conductive wirings 2A.

Thereafter, oxygen ions are implanted to minimize the effect of the etching residues 4A and 4B on the conductors. At this time, the oxygen ions react with the etching residues between the conductive wirings 2A to be metal oxides.

2C is a perspective view of a semiconductor device in which conductive wiring 2A is formed on the semiconductor substrate 1, wherein the photoresist pattern 3 is removed by a known method, and the resultant is subjected to a heat treatment process for a predetermined time. Then, the etching residues 4A and 4B causing the phenomenon such as bridging or scum are oxidized between the wirings 2A, and the electrical influence of the etching residues 4A and 4B between the conductive wirings 2A is minimized. . On the other hand, the oxidized residues 4A-1 and 4B-1 are present between the metal wires, so that an insulating film can be easily formed on the trailing portion during the formation process of the interlayer insulating film.

According to this embodiment, oxygen ions are implanted into the entire surface of the resultant between the etching process of the conductive wiring and the process of removing the photoresist pattern. As a result, the etch residue generated between the conductive wirings is oxidized by the implanted oxygen ions and the heat treatment process, and the action of the conductive material is suppressed. Therefore, the reliability fall by the bridging phenomenon and the scum phenomenon is improved.

Second Embodiment

The present embodiment uses the ozone shower method as a method of oxidizing the etching residue. This embodiment differs from the first embodiment only in the process of injecting oxygen ions, and the processes before and after are the same.

In this embodiment, the conductive wiring 2A is formed by the photoresist pattern 3, and then an ozone shower (O ₃ ) shower process is performed. Here, the ozone shower step means that the heat treatment step is performed in an ozone atmosphere while gradually increasing the temperature at a predetermined temperature, preferably at a temperature of 450 ° C. or higher.

In this manner, in the ozone shower process, the etching residues 4A and 4B causing the phenomenon such as bridging or scum are oxidized between the wirings 2A, and the etching residues 4A and 4B are applied between the conductive wirings 2A. Minimize the impact.

As described in detail above, according to the present invention, the conductive wiring process is performed by selectively injecting oxygen ions or an ozone shower process between the conductive film etching process and the photoresist pattern removing process by the photoresist pattern, thereby conducting wiring. Oxidation residues such as bridging and scum that occur between them are oxidized.

Therefore, there is an effect that the reliability of the conductive wiring is improved.

In addition, this invention can be implemented in various changes within the range which does not deviate from the summary.

Claims (5)

Providing a semiconductor substrate having a conductive film formed on an uppermost end thereof; Forming a photoresist pattern having a predetermined shape on the conductive film; Patterning a conductive film in the form of the photoresist pattern; Oxidizing an etching residue between the patterned conductive film; And And removing the photoresist pattern. The method of claim 1, wherein oxidizing the etching residues comprises injecting oxygen ions into the entire surface of the semiconductor substrate. The method of claim 1, further comprising, after removing the photoresist pattern, performing a predetermined thermal process. The method of claim 1, wherein oxidizing the etching residues comprises heat treating the semiconductor substrate in an ozone atmosphere. The method of claim 4, wherein in the heat treatment of the semiconductor substrate, the heat treatment temperature is performed at 450 ° C. or higher.