KR19990002969A - Leadframe and Leadframe Electropolishing - Google Patents
Leadframe and Leadframe Electropolishing Download PDFInfo
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- KR19990002969A KR19990002969A KR1019970026733A KR19970026733A KR19990002969A KR 19990002969 A KR19990002969 A KR 19990002969A KR 1019970026733 A KR1019970026733 A KR 1019970026733A KR 19970026733 A KR19970026733 A KR 19970026733A KR 19990002969 A KR19990002969 A KR 19990002969A
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- South Korea
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- lead frame
- coining
- electropolishing
- electrolytic polishing
- mask
- Prior art date
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- 238000005498 polishing Methods 0.000 claims abstract description 27
- 238000000034 method Methods 0.000 claims abstract description 25
- 238000005507 spraying Methods 0.000 claims abstract description 6
- 239000007788 liquid Substances 0.000 claims abstract description 5
- 239000008151 electrolyte solution Substances 0.000 description 7
- 230000003746 surface roughness Effects 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 6
- 239000003792 electrolyte Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
리드프레임 및 리드프레임 전해연마방법이 개시된다. 이 리드프레임 전해연마방법은, 마스크를 이용하여 전해연마될 코이닝부를 노출시키는 제1단계와, 상기 코이닝부와 가공전극사이에 소정의 전위를 인가하는 제2단계와, 상기 노출된 코이닝부에 전해연마액을 분사하여 전해연마시키는 제3단계와, 상기 코이닝부에 전해연마가 실시된 후, 상기 리드프레임에서 마스크를 분리하는 제4단계를 포함하여 된다.A leadframe and a leadframe electropolishing method are disclosed. The leadframe electropolishing method includes a first step of exposing a coining part to be electropolished using a mask, a second step of applying a predetermined potential between the coining part and the processing electrode, and the exposed coining And a fourth step of electrolytic polishing by spraying the electrolytic polishing liquid on the part, and a fourth step of separating the mask from the lead frame after the electropolishing is performed on the coining part.
Description
본 발명은 리드프레임 및 리드프레임 전해연마방법에 관한 것으로서, 상세하게는 와이어본딩의 신뢰성을 향상시키기 위해 리드프레임의 표면상태를 조절하는 리드프레임 전해연마방법에 관한 것이다.The present invention relates to a lead frame and a lead frame electropolishing method, and more particularly, to a lead frame electropolishing method for adjusting the surface state of the lead frame in order to improve the reliability of wire bonding.
전해연마가공은 전해액을 사용하여 연마하고자하는 대상물을 전기화학적으로 가공하는 것으로서, 통상적으로 기계적 가공에서와 같이 가공에 따른 힘과 열 때문에 가공면의 변형이 발생될 수 있는 대상물, 연질의 금속(동, 알루미늄..) 및 복잡한 형상의 대상물에 대하여 표면거칠기 등의 표면상태를 조절하기 위해서 실시된다.Electrolytic polishing is an electrochemical processing of an object to be polished using an electrolytic solution. As a result, as in mechanical processing, an object, a soft metal (copper), may be deformed due to the force and heat caused by the processing. , Aluminium ..) and complex shaped objects to control surface conditions such as surface roughness.
상술한 전해연마공정은 리드프레임의 제작공정중에도 리드프레임의 표면상태를 조절하기 위해 실시된다. 즉, 통상적인 리드프레임은 도 1에 도시된 바와 같이, 반도체칩이 설치되는 패드(11)와, 패드(12)를 지지하는 타이바(13)와, 패드(12)의 둘레에 형성된 인너리드(14)와, 이 인너리드(14)로부터 연장된 아우터리드(15)를 포함하여 된다. 상술한 리드프레임에서 도 2에 도시된 바와 같이, 패드(11)에 반도체칩(12)이 설치되고, 인너리드(14)의 일단에 단차져서 형성된 코이닝부(14a)와 반도체칩(12) 사이에 와이어본딩이 실시된다. 이때, 상기 코이닝부(14a)의 표면거칠기와 표면조도 등은 와이어본딩공정의 중요한 관리요소가 된다. 따라서, 와이어본딩의 신뢰성을 향상시키기 위해서 상기 코이닝부(14a)에 대하여 전해연마를 실시하여 그 표면상태를 조절하고자 한다.The electropolishing process described above is performed to adjust the surface state of the lead frame even during the manufacturing process of the lead frame. That is, the conventional lead frame, as shown in Figure 1, the pad 11, the semiconductor chip is installed, the tie bar 13 supporting the pad 12, the inner lead formed around the pad 12 14 and an outer lead 15 extending from the inner lead 14. In the above-described lead frame, as shown in FIG. 2, the coin chip 14a and the semiconductor chip 12 are provided on the pad 11 and are stepped on one end of the inner lead 14. Wire bonding is performed in between. At this time, the surface roughness and surface roughness of the coining portion 14a are important management elements of the wire bonding process. Therefore, in order to improve the reliability of wire bonding, the coining portion 14a is subjected to electropolishing to adjust the surface state thereof.
하지만 리드프레임과 같이 형상이 복잡한 제품에 대하여 통상적인 전해연마를 실시할 경우, 전해연마시에 인가되는 전류가 각 부위별로 불균일하게 분포됨에 따라 일부분에 집중적으로 전해연마가 실시되어 에칭이 되는 부위가 발생한다. 이를 상세히 설명하면 다음과 같다.However, when electrolytic polishing is performed on products with complex shapes such as lead frames, the current applied during electrolytic polishing is distributed unevenly for each part, so that electrolytic polishing is concentrated on a part and the parts to be etched are removed. Occurs. This will be described in detail as follows.
종래의 리드프레임 전해연마방법에서는, 인너리드(14), 아우터리드(15), 패드(11)를 포함하는 리드프레임에 대하여 전해액을 적용시키고, 전류를 인가함으로써 전해연마를 실시하였다. 따라서, 리드프레임에 인가되는 전류는 인너리드, 아우터리드, 패드를 포함하는 리드프레임의 각 부분에 걸쳐서 작용하면서 리드프레임의 각의 부위에 전해연마를 실시한다. 하지만, 통상적으로 리드프레임의 형상이 복잡하게 형성되므로, 전해액이 적용된 리드프레임의 각 부위를 흐르는 전류의 양이 일정하지 않게 된다. 이로 인해, 전해연마가 실시될 리드프레임의 각 부위는 흐르는 전류의 양에 따라 전해연마가 실시된 정도가 다르게 될 수 있다. 따라서, 리드프레임의 소정부분은 전해연마가 실시되지 않거나, 소정부분은 전해연마가 집중적으로 실시되어 그 표면이 패이는 현상이 발생하게 된다.In the conventional lead frame electropolishing method, electrolytic polishing was performed by applying an electrolyte solution to a lead frame including the inner lead 14, the outer lead 15, and the pad 11, and applying a current. Therefore, the current applied to the lead frame acts over each part of the lead frame including the inner lead, the outer lead, and the pad, and performs electropolishing on each part of the lead frame. However, in general, since the shape of the lead frame is complicated, the amount of current flowing through each portion of the lead frame to which the electrolyte is applied is not constant. For this reason, each part of the lead frame to be subjected to electropolishing may have a different degree of electropolishing depending on the amount of current flowing. Therefore, electropolishing is not performed on a predetermined portion of the lead frame, or electropolishing is intensively performed on a predetermined portion, so that the surface of the lead frame is pierced.
또한, 리드프레임에서 전해연마를 실시하는 목적은 와이어본딩이 실시되는 인너리드(14)의 코이닝부(14a)에 대하여 그 표면의 표면거칠기 및 표면조도 등을 조절하는 것이다. 하지만, 종래의 리드프레임 전해연마 방법은 리드프레임에서 코이닝부(14a)를 포함한 인너리드(14)와, 아우터리드(15) 등의 부분에 대해서도 전해연마가 실시되므로, 코이닝부(14a)에 대한 전해연마효율이 나빠지게 된다. 상술한 바와 같은 문제점으로 코이닝부(14a)에 대한 전해연마가 절절하게 실시되지 않을 경우, 본래의 목적인 코이닝부(14a)의 표면거칠기 및 표면조도의 개선이 이루어지지 않아 후속하는 와이어본딩공정의 신뢰성이 나빠지게 된다.In addition, the purpose of electrolytic polishing in the lead frame is to control the surface roughness and surface roughness of the surface of the coining portion 14a of the inner lead 14 to which the wire bonding is performed. However, in the conventional leadframe electropolishing method, since electropolishing is performed on the inner lead 14 including the coining portion 14a and the outer lead 15 in the lead frame, the coining portion 14a is performed. The electrolytic polishing efficiency becomes poor. If the electropolishing on the coining portion 14a is not performed properly due to the problems described above, the surface roughness and surface roughness of the coining portion 14a, which is the original purpose, are not improved, and the subsequent wire bonding process is performed. The reliability of becomes worse.
본 발명은 상기와 같은 문제점을 감안하여 창출된 것으로서, 리드프레임에 대하여 전해연마를 실시할 때 전해연마가 리드프레임의 소정부위에 불균일하게 실시되는 것을 방지하며, 코인닝부에 대한 전해연마효율을 향상시키는 리드프레임 전해연마방법 및 리드프레임을 제공하는데 그 목적이 있다.The present invention has been made in view of the above problems, and when electrolytic polishing is performed on a lead frame, electrolytic polishing is prevented from being performed unevenly on a predetermined portion of the lead frame, and the electrolytic polishing efficiency for the coining part is improved. It is an object of the present invention to provide a lead frame electropolishing method and a lead frame.
도 1은 통상적인 리드프레임의 일 예를 도시한 평면도,1 is a plan view showing an example of a conventional lead frame,
도 2는 리드프레임의 코이닝부와 반도체칩 사이에 와이어본딩이 실시된 상태를 도시한 도면,2 is a view illustrating a state in which wire bonding is performed between a coining part of a lead frame and a semiconductor chip;
도 3은 본 발명에 따른 리드프레임 전해연마방법의 공정흐름을 도시한 도면이다.3 is a view showing a process flow of the leadframe electropolishing method according to the present invention.
도면의 주요부분에 대한 부호의 설명Explanation of symbols for main parts of the drawings
11.패드12.반도체칩11.Pad 12.Semiconductor Chip
13.타이바14.인너리드13.Tibar 14.Inner Lead
15.아우터리드15.Outdoor
상기와 같은 목적을 달성하기 위해 본 발명은 코이닝부를 갖는 인너리드부와 아우터리드부를 포함하는 리드프레임에서 코인닝부의 표면상태를 조절하기 위해서 실시하는 리드프레임 전해연마방법에 있어서, 마스크를 이용하여 전해연마될 코이닝부를 노출시키는 제1단계와, 상기 코이닝부와 가공전극사이에 소정의 전위를 인가하는 제2단계와, 상기 노출된 코이닝부에 전해연마액을 분사하여 전해연마시키는 제3단계 및 상기 코이닝부에 전해연마가 실시된 후, 상기 리드프레임에서 마스크를 분리하는 제4단계를 포함한다.In order to achieve the above object, the present invention provides a lead frame electropolishing method for adjusting the surface state of a coining portion in a lead frame including an inner lead portion and an outer lead portion having a coining portion, using a mask. A first step of exposing the coining part to be electropolished, a second step of applying a predetermined potential between the coining part and the processing electrode, and an electropolishing solution by spraying an electrolytic polishing liquid on the exposed coining part Step 3 and the fourth step of removing the mask from the lead frame after the electropolishing is performed on the coining unit.
또한, 본 발명인 리드프레임은 소정 패턴의 마스크를 이용하여 전해연마될 인너리드의 코이닝부를 노출시키는 단계와, 상기 코이닝부와 가공전극사이에 소정의 전위를 인가하는 단계와, 상기 노출된 코이닝부에 전해연마액을 분사하여 전해연마시키는 단계 및 상기 코이닝부에 전해연마가 실시된 후, 상기 리드프레임에서 마스크를 분리하는 단계를 포함하는 리드프레임 전해연마방법에 의해 제조된 것이다.In addition, the lead frame of the present invention is a step of exposing the coining portion of the inner lead to be electropolished using a mask of a predetermined pattern, applying a predetermined potential between the coining portion and the processing electrode, and the exposed nose After electrolytic polishing by spraying the electrolytic polishing liquid to the inning portion and after the electrolytic polishing is performed in the coining portion, it is prepared by the lead frame electrolytic polishing method comprising the step of separating the mask from the lead frame.
이하 도면을 참조하여 본 발명에 따른 바람직한 실시예를 상세히 설명하기로 한다.Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.
본 발명에 따른 리드프레임은 소정 패턴의 마스크를 이용하여 전해연마될 인너리드의 코이닝부를 노출시킨 후, 전해연마를 실시하는 리드프레임 전해연마방법에 의해 제조된 것으로서, 후술하는 본 발명에 따른 리드프레임 전해연마방법을 통하여 상세히 설명하기로 한다.The lead frame according to the present invention is manufactured by a lead frame electropolishing method of performing electrolytic polishing after exposing the coining part of the inner lead to be electropolished using a mask having a predetermined pattern, and the lead according to the present invention described below. The frame electropolishing method will be described in detail.
도 3은 본 발명에 따른 리드프레임 전해연마방법의 일 실시예를 도시한 공정도로서, 그 내용은 다음과 같다.Figure 3 is a process diagram showing an embodiment of a lead frame electropolishing method according to the present invention, the contents are as follows.
이 리드프레임 전해연마방법은, 전해연마될 코이닝부를 노출시키는 제1단계(S100)와, 상기 코이닝부와 가공전극 사이에 전위를 인가하는 제2단계(S200)와, 상기 노출된 코이닝부에 전해액을 분사하여 전해연마시키는 제3단계(S300)를 포함하여 된다.The lead frame electropolishing method includes a first step S100 of exposing a coining part to be electropolished, a second step S200 of applying a potential between the coining part and a processing electrode, and the exposed coining And a third step (S300) of spraying electrolytic solution onto the unit.
상기 제1단계(S100)에서는 리드프레임에서 전해연마가 실시될 부분에 대해서만 마스크를 사용하여 선별적으로 외부에 노출시키게된다. 예컨대, 리드프레임의 패드에 반도체칩이 배치되고, 이 반도체칩과 코이닝부의 와이어본딩시 그 신뢰성을 향상시키기 위해서 코이닝부에 전해연마를 실시하게 된다. 따라서, 상기 마스크는 리드프레임에서 상기 코이닝부만 외부로 노출될 수 있도록 코이닝부의 형상에 대응하여 형성된다.In the first step (S100) it is selectively exposed to the outside using a mask only for the portion to be subjected to electropolishing in the lead frame. For example, a semiconductor chip is disposed on a pad of a lead frame, and electropolishing is performed on the coining part in order to improve the reliability during wire bonding of the semiconductor chip and the coining part. Accordingly, the mask is formed to correspond to the shape of the coining portion so that only the coining portion is exposed to the outside in the lead frame.
그리고 상기 제2단계(S200)에서는, 상기 리드프레임의 코이닝부와 가공전극 사이에 소정의 전위를 인가시키게 된다. 이때는 통상적인 전해연마공정에서과 같이 리드프레임의 코이닝부를 양극측으로 하고, 가공전극측을 음극으로 함이 바람직하다.In the second step S200, a predetermined potential is applied between the coining part of the lead frame and the processing electrode. At this time, it is preferable that the coining portion of the lead frame is the anode side and the processing electrode side is the cathode as in the conventional electrolytic polishing process.
그리고 상기 제3단계(S300)에서는, 상기 리드프레임에 마스크를 적용한 후 외부로 노출된 코이닝부에 대해서 전해액을 적용하면서 전해연마를 실시하게 된다. 이때, 리드프레임에서 마스크에 의해 코이닝부만 외부로 노출되므로 전해액이 코이닝부에만 적용되어 코이닝부에 대해서만 전해연마가 이루어진다.In the third step S300, after applying a mask to the lead frame, electrolytic polishing is performed while applying an electrolyte solution to a coining part exposed to the outside. At this time, since only the coining part is exposed to the outside by the mask in the lead frame, the electrolytic solution is applied only to the coining part to perform electropolishing only for the coining part.
그리고, 상기 코이닝부에 전해연마가 실시된 후, 상기 리드프레임에서 마스크를 분리하는 제4단계(S400)가 실시되며 통상적인 후처리 공정 등이 실시된다.After electrolytic polishing is performed on the coining unit, a fourth step S400 of separating the mask from the lead frame is performed, and a conventional post-treatment process is performed.
상술한 바와 같은 본 발명에 따른 리드프레임 전해연마가공은 마스크를 사용하여 전해연마가 실시되어야 하는 부위에 대하여만 전해연마를 실시하는 것이 가능해진다. 즉, 리드프레임에서 와이어본딩을 실시하기 위해서 코이닝부의 전해연마를 실시하고자 할 경우, 이 코이닝부의 형상에 대응하는 마스크를 리드프레임에 적용시켜서 전해연마가 실시될 코이닝부를 외부에 노출시킨다. 그리고, 상기 외부에 노출된 코이닝부에 전해액을 분사시키거나 코이닝부를 전해액이 수용된 용기에 침적시켜서 전해연마가 실시될 부위에 전해액을 적용시키게 된다. 그리고, 통상적인 전해연마 방법으로 리드프레임에서 전해액이 적용되는 코이닝부에 대해서만 전해연마를 실시할 수 있게 된다.In the lead frame electropolishing processing according to the present invention as described above, it is possible to perform electropolishing only on the portion to be subjected to electropolishing using a mask. That is, when electrolytic polishing of the coining portion is to be performed for wire bonding in the lead frame, a mask corresponding to the shape of the coining portion is applied to the lead frame to expose the coining portion to be subjected to electropolishing. Then, the electrolyte is injected to the coining part exposed to the outside or the coining part is deposited in a container containing the electrolyte solution to apply the electrolyte solution to the electrolytic polishing site. In addition, the electropolishing can be performed only for the coining part to which the electrolyte is applied in the lead frame by the conventional electropolishing method.
본 발명에 따른 리드프레임 및 리드프레임 전해연마방법은 다음과 같은 효과를 가진다.The leadframe and the leadframe electropolishing method according to the present invention have the following effects.
첫째, 복잡한 형상의 리드프레임에서 전해연마를 실시할 부위에 대해서만 전해연마를 실시함으로써, 그 효율이 향상된다.First, the electrolytic polishing is performed only on a portion to be subjected to electropolishing in a complex lead frame, thereby improving the efficiency.
둘째, 마스크를 사용함으로써, 필요한 부분에 대해서만 전해연마를 실시할 수 있다.Second, by using a mask, electropolishing can be performed only on necessary parts.
셋째, 전해액의 노화도를 줄일 수 있고 공정관리가 용이하다.Third, the degree of aging of the electrolyte can be reduced and the process management is easy.
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| KR1019970026733A KR100246584B1 (en) | 1997-06-24 | 1997-06-24 | Lead frame and method of electrolytic polishing of leadframe |
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| KR1019970026733A KR100246584B1 (en) | 1997-06-24 | 1997-06-24 | Lead frame and method of electrolytic polishing of leadframe |
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