KR19980087300A - 반도체 소자의 전기적 접점과 그의 저항률 및 전압 강하 감소방법 - Google Patents

반도체 소자의 전기적 접점과 그의 저항률 및 전압 강하 감소방법 Download PDF

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Publication number
KR19980087300A
KR19980087300A KR1019980018521A KR19980018521A KR19980087300A KR 19980087300 A KR19980087300 A KR 19980087300A KR 1019980018521 A KR1019980018521 A KR 1019980018521A KR 19980018521 A KR19980018521 A KR 19980018521A KR 19980087300 A KR19980087300 A KR 19980087300A
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KR
South Korea
Prior art keywords
layer
gallium nitride
intermediate layer
nitride material
band
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1019980018521A
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English (en)
Korean (ko)
Inventor
용 첸
롱 양
시-유안 왕
리차드 피 슈나이더
Original Assignee
하드캐스틀 아이안
휴렛트-팩카드 캄파니
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
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Application filed by 하드캐스틀 아이안, 휴렛트-팩카드 캄파니 filed Critical 하드캐스틀 아이안
Publication of KR19980087300A publication Critical patent/KR19980087300A/ko
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
    • H10H20/8142—Bodies having reflecting means, e.g. semiconductor Bragg reflectors forming resonant cavity structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP

Landscapes

  • Semiconductor Lasers (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Led Devices (AREA)
KR1019980018521A 1997-05-23 1998-05-22 반도체 소자의 전기적 접점과 그의 저항률 및 전압 강하 감소방법 Withdrawn KR19980087300A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US8/862,461 1997-05-23
US08/862,461 US6100586A (en) 1997-05-23 1997-05-23 Low voltage-drop electrical contact for gallium (aluminum, indium) nitride

Publications (1)

Publication Number Publication Date
KR19980087300A true KR19980087300A (ko) 1998-12-05

Family

ID=25338547

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019980018521A Withdrawn KR19980087300A (ko) 1997-05-23 1998-05-22 반도체 소자의 전기적 접점과 그의 저항률 및 전압 강하 감소방법

Country Status (5)

Country Link
US (1) US6100586A (cg-RX-API-DMAC7.html)
EP (1) EP0880181B1 (cg-RX-API-DMAC7.html)
JP (1) JPH1140887A (cg-RX-API-DMAC7.html)
KR (1) KR19980087300A (cg-RX-API-DMAC7.html)
DE (1) DE69833514T2 (cg-RX-API-DMAC7.html)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69835216T2 (de) 1997-07-25 2007-05-31 Nichia Corp., Anan Halbleitervorrichtung aus einer nitridverbindung
US6657300B2 (en) * 1998-06-05 2003-12-02 Lumileds Lighting U.S., Llc Formation of ohmic contacts in III-nitride light emitting devices
JP3770014B2 (ja) 1999-02-09 2006-04-26 日亜化学工業株式会社 窒化物半導体素子
US6711191B1 (en) 1999-03-04 2004-03-23 Nichia Corporation Nitride semiconductor laser device
JP3963068B2 (ja) * 2000-07-19 2007-08-22 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体素子の製造方法
KR20010000545A (ko) * 2000-10-05 2001-01-05 유태경 펌핑 층이 집적된 다 파장 ＡｌＧａＩｎＮ계 반도체ＬＥＤ 소자 및 그 제조 방법
US6649942B2 (en) * 2001-05-23 2003-11-18 Sanyo Electric Co., Ltd. Nitride-based semiconductor light-emitting device
US6605832B2 (en) * 2001-07-31 2003-08-12 Xerox Corporation Semiconductor structures having reduced contact resistance
EP1298461A1 (en) * 2001-09-27 2003-04-02 Interuniversitair Microelektronica Centrum Vzw Distributed Bragg reflector comprising GaP and a semiconductor resonant cavity device comprising such DBR
EP1302791A1 (en) * 2001-09-27 2003-04-16 Interuniversitair Microelektronica Centrum Vzw Distributed Bragg Reflector comprising a GaP layer, and a semiconductor resonant cavity device comprising such a DBR
US6878975B2 (en) * 2002-02-08 2005-04-12 Agilent Technologies, Inc. Polarization field enhanced tunnel structures
TWI238549B (en) * 2003-08-21 2005-08-21 Toyoda Gosei Kk Light-emitting semiconductor device and a method of manufacturing it
US7009215B2 (en) * 2003-10-24 2006-03-07 General Electric Company Group III-nitride based resonant cavity light emitting devices fabricated on single crystal gallium nitride substrates
US7119372B2 (en) * 2003-10-24 2006-10-10 Gelcore, Llc Flip-chip light emitting diode
JP2006114886A (ja) * 2004-09-14 2006-04-27 Showa Denko Kk ｎ型ＩＩＩ族窒化物半導体積層構造体
US7501295B2 (en) * 2006-05-25 2009-03-10 Philips Lumileds Lighting Company, Llc Method of fabricating a reflective electrode for a semiconductor light emitting device
TWI362769B (en) 2008-05-09 2012-04-21 Univ Nat Chiao Tung Light emitting device and fabrication method therefor
DE102009034359A1 (de) * 2009-07-17 2011-02-17 Forschungsverbund Berlin E.V. P-Kontakt und Leuchtdiode für den ultravioletten Spektralbereich
DE102018120490A1 (de) * 2018-08-22 2020-02-27 Osram Opto Semiconductors Gmbh Optoelektronisches halbleiterbauelement mit einer halbleiterkontaktschicht und verfahren zur herstellung des optoelektronischen halbleiterbauelements
US20230288540A1 (en) * 2022-03-08 2023-09-14 Allegro Microsystems, Llc Detector having quantum dot pn junction photodiode

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4024569A (en) * 1975-01-08 1977-05-17 Rca Corporation Semiconductor ohmic contact
JPS5932902B2 (ja) * 1980-06-12 1984-08-11 インターナシヨナルビジネス マシーンズ コーポレーシヨン 半導体オ−ミツク接点
JPH0637355A (ja) * 1992-07-20 1994-02-10 Nippon Telegr & Teleph Corp <Ntt> Ｉｉｉ−ｖ族合金半導体およびその製造方法
FR2696278B1 (fr) * 1992-09-25 1994-11-18 Thomson Csf Dispositif comprenant des moyens d'injection de porteurs électroniques dans des matériaux à grand gap.
EP0952617B1 (en) * 1993-04-28 2004-07-28 Nichia Corporation Gallium nitride-based III-V group compound semiconductor device
JPH07283167A (ja) * 1994-04-12 1995-10-27 Sumitomo Chem Co Ltd ３−５族化合物半導体用電極材料
JP3605907B2 (ja) * 1994-10-28 2004-12-22 三菱化学株式会社 コンタクト抵抗低減層を有する半導体装置
US5679965A (en) * 1995-03-29 1997-10-21 North Carolina State University Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact, non-nitride buffer layer and methods of fabricating same

Also Published As

Publication number Publication date
EP0880181B1 (en) 2006-02-22
EP0880181A3 (en) 1999-01-20
EP0880181A2 (en) 1998-11-25
DE69833514T2 (de) 2006-10-05
DE69833514D1 (de) 2006-04-27
US6100586A (en) 2000-08-08
JPH1140887A (ja) 1999-02-12

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Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 19980522

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PN2301 Change of applicant

Patent event date: 20001102

Comment text: Notification of Change of Applicant

Patent event code: PN23011R01D

N231 Notification of change of applicant
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Patent event date: 20010108

Comment text: Notification of Change of Applicant

Patent event code: PN23011R01D

PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid