KR19980086762A - Deposition chamber and method for depositing a film having low dielectric constant - Google Patents

Abstract

The improved deposition chamber 2 comprises a housing 4 defining a chamber 18 housing the substrate support 14. The mixture of oxygen and SiF ₄ is conveyed through the first nozzle set 34 and the silane is conveyed through the second nozzle set 34a into the chamber around the perimeter 40 of the substrate support. Silane (or a mixture of silane and SiF ₄ ) and oxygen are injected into the chamber, generally centrally, across the substrate from the holes 64, 76. Uniform distribution of the gas combined with the use of the optimum flow rate for each gas results in a uniformly low dielectric constant (below 3.4) across the membrane.

Description

Deposition chamber and method for depositing a film having low dielectric constant

The present invention relates to a deposition chamber and method for depositing a film having a low dielectric constant.

One of the important steps in the fabrication of modern semiconductor devices is the formation of thin films on semiconductor substrates by chemical reaction of gases. This deposition process is referred to as chemical vapor deposition (CVD). Typical thermal CVD processes supply reactant gas to the substrate surface, which can occur to form films in which thermally induced chemical reactions are required. The plasma CVD process promotes excitation and / or dissociation of the reactant gas by the application of radio frequency (RF) energy to a reaction zone proximate the substrate surface to form a plasma of highly reactive species. The high reactivity of the released species reduces the energy needed for the chemical reactions to occur and therefore lowers the temperature required for the CVD process.

In one of the designs of the plasma CVD chamber, the vacuum chamber generally functions as a cathode and has a flat substrate support along the bottom, a planar anode along the top, a relatively short sidewall extending upward from the bottom, and a dielectric connecting the top and sidewalls. Defined by the dome. An induction coil is mounted around the dome and connected to a source radio frequency (SRF) generator. The anode and cathode are typically coupled to a bias radio frequency (BRF) generator. The energy applied from the SRF generator to the induction coil forms an inductively coupled plasma in the chamber. This chamber is referred to as a high density plasma CVD (HDP-CVD) chamber.

In some HDP-CVD chambers, it is typical to mount two or more distributor sets on the sidewalls spaced evenly, such as nozzles, and extending into an area above the edge of the substrate support surface. A gas nozzle for each distributor set is coupled to a common manifold for the set; The manifold provides process gas to the gas nozzle. The composition of the gas introduced into the chamber depends primarily on the type of material to be formed on the substrate. For example, when a fluorosilicate glass (FSG) film is deposited in the chamber, the process gas may include silane (SiH ₄ ), silicon tetrafluoride (SiF ₄ ), oxygen (O ₂ ), and argon (Ar). have. Gas nozzle sets are generally used because it is desirable to introduce some gas into the chamber separately from other gases while other gases can be carried through the common manifold to the common nozzle set. For example, O ₂ than individually, it is preferred to introduce the SiH _4, while in the FSG process is O ₂ and SiF ₄ can be easily carried together. The nozzle tip has an outlet, typically a hole, disposed at regular intervals on the perimeter of the substrate support and through which the processing gas flows.

As device sizes become smaller and integration densities increase, the development of processing technologies is required to meet the processing needs of semiconductor manufacturers. One parameter important in this process is the film deposition uniformity. Above all, to achieve high film uniformity, it is necessary to precisely control the gas transport across the wafer surface into the deposition chamber. Ideally, the ratio of gas introduced at several points (eg, the ratio of O ₂ to (SiH ₄ + SiF ₄ )) should be the same depending on the wafer surface.

1 shows a typical undoped silicate glass (USG) deposition thickness variation plot 46 for a conventional deposition chamber, such as the chamber already disclosed. The average thickness is shown by the baseline 48. As can be seen by the plot 46, it is increasing relatively steeply at the endpoints 50 and 52 of the plot 46 corresponding to the perimeter 42 of the substrate 20. In addition, the center 54 of the plot 46 substantially descends.

US patent application Ser. No. 08 / 571,618, filed December 13, 95, discloses a central nozzle 56 coupled to a third gas source 58 via a third gas controller 60 and a third gas supply line 62. Discloses how the plot 46 is improved. The central nozzle 56 has a hole 64 centered on the substrate support surface 16. The use of the central nozzle 56 allows a variation from the USG deposition thickness change plot 46 of FIG. 1 to the preferred plot 68 of FIG. 2. The preferred deposition thickness change plot 68 is flat enough that the standard deviation of the deposition thickness can be 1 to 2% of one sigma. This is mainly achieved by reducing the steep slope of the plot at the endpoints 50, 52 and raising it at a lower position at the center 54 of the plot 46.

With the advent of multi-level metal technology in which three, four, or more metal layers are formed on a semiconductor, another goal of semiconductor fabrication is to lower the dielectric constant of dielectric layers, such as intermetallic dielectric layers. Low dielectric constant films are particularly desirable as intermetal dielectric (IMD) layers to reduce the RC time delay of interconnect metallization processes, prevent crosstalk between different levels of metallization processes, and reduce device power consumption.

Many attempts have been made to achieve low dielectric constants. One of the most promising solutions is to mix fluorine or other halogen elements (eg chlorine or bromine) in the silicon oxide layer. Since fluorine is a negative atom that reduces the polarization of the entire SiOF network, it is believed that fluorine, which is a preferred halogen dopant for silicon oxide, lowers the dielectric constant of the silicon oxide film. The fluorine doped silicon oxide film is referred to as a fluorosilicate glass (FSG) film.

As mentioned above, it can be seen that it is desirable to produce an oxide film having a reduced dielectric constant, such as an FSG film. At the same time, it is also desirable to provide a method for precisely controlling the delivery of processing gas to all locations along the wafer surface in order to improve properties such as film uniformity. As already disclosed, one method used to improve film deposition uniformity is disclosed in US patent application Ser. No. 08 / 571,618. In spite of these improvements, new techniques for achieving these related objectives are constantly being researched to keep pace with recent scientific techniques.

It is an object of the present invention to provide an improved deposition chamber incorporating an improved gas delivery system and a method for depositing films having low dielectric constants and improved uniformity.

1 is an exaggerated diagram showing a characteristic M-type deposition thickness variation plot of the prior art. FIG. 2 shows an improvement of the deposition thickness change of FIG. 1 using the apparatus of US patent application 08 / 571,618.

3 is a schematic cross-sectional view illustrating a deposition chamber made in accordance with one embodiment of the present invention.

4 is a graph of dielectric constant versus oxygen flow for different flow rate ratios of SiF ₄ to silane.

5 is a schematic representation of another embodiment of the central nozzle of FIG. 3 with three holes;

6 is an area view of a central nozzle showing additional oxygen passages.

* Explanation of symbols for main parts of the drawings

34, 34a: nozzle 38: hole

56 center nozzle 70 gas passage

76: annular hole 78: fluid seal

The present invention relates to the provision of an improved deposition chamber incorporating an improved gas delivery system. The gas delivery system ensures that an appropriate proportion of process gas is uniformly transported across the wafer surface. The invention also relates to a method for depositing an FSG film having a low dielectric constant and improved uniformity. This includes (1) application of a gas to the substrate (preferably silane, a gas for flow supply such as SiF ₄ or CF ₄ , and an oxygen supply gas such as O ₂ or N ₂ 0), (2) preferably a special chamber By means of a combination of the optimum flow rate selection of the gas, which is determined as a test result. In some embodiments, the doped FSG film has a dielectric constant as low as 3.4 or 3.3. Preferably, the dielectric constant of the FSG film is at least 3.5 or less.

The improved deposition chamber includes a housing defining a deposition chamber. The substrate support is housed in the deposition chamber. The first gas distributor has holes or other outlets that are spaced from the substrate support surface and open into the deposition chamber that are generally in a peripheral pattern that overlaps around the periphery of the substrate support surface. A second gas distributor, preferably a central nozzle, is used which is spaced above it from the substrate support surface, and wherein the third gas distributor is used for supplying oxygen (e. G. , O ₂ ). This is preferably accomplished by passing oxygen through an annular hole formed between a central nozzle carrying silane (and other gases) and a hole in the top of the housing. In one embodiment the first gas distributor comprises a first and a second nozzle set.

In one embodiment of the present invention, the FSG film is deposited from a processing gas comprising silane, oxygen and SiF ₄ . Oxygen and SiF ₄ are carried together through the first nozzle set to the chamber, and silane (or silane and SiF ₄ ) is carried through the second nozzle set. Mixing oxygen and SiF ₄ and introducing this mixture through the first nozzle set can reduce equipment complexity and reduce costs. Silane (or silane and SiF ₄ ) is also injected from the second gas distributor into the vacuum chamber to improve uniform application of gas to the substrate top, which is achieved without the use of a second gas distributor, and oxygen is injected into the third gas distributor. Is carried through. In this way, oxygen is preferably supplied together with SiF ₄ from the side through the first set of nozzles of the first gas distributor and into the same region as the silane on the substrate. In addition, the passage of oxygen through the annular aperture prevents damage of the seal in which the reactive gas in the chamber is used between the top of the housing and the body from which the central nozzle extends. This advantage persists if silane passes through the annular nozzle and oxygen passes through the central nozzle.

Film thickness and dielectric constant uniformity are also enhanced by using a source RF generator designed to ensure that the temperature of the substrate remains uniform across the substrate and to achieve sputtering uniformity.

One of the main features of the present invention is the recognition that it is very important to ensure a uniform distribution of oxygen entering the chamber. This is accomplished by flowing oxygen from the top of the chamber and from the side of the chamber. In addition, by proper configuration of the oxygen flow path through the top of the chamber, oxygen can be used to protect the sealing element from harmful phenomena that occur in contact with the reactant gas, such as fluorine.

In addition to the need to supply gas evenly to the substrate, it is necessary to use the correct proportions of gases such as O ₂ , SiH ₄ and SiF ₄ to deposit stable films and achieve minimum dielectric constants for the films. The appropriate flow rate for each will depend on the specific chamber used. Thus, it is another feature of the present invention to test various flow rate ratios that provide high density dielectric films with a minimum dielectric constant.

Other features and advantages of the invention will be derived from the following detailed description in which preferred embodiments are described in detail in conjunction with the accompanying drawings.

FIG. 3 illustrates a deposition chamber 2 comprising a housing 4 having a generally cylinderized dielectric enclosure 6 surrounded by two sets of RF induction coils 8, 9. The seal 6 can be made of an RF transparent material in addition to the dielectric material. The coils 8, 9 are powered by a pair of source RF generators 10, 11. The chamber 2 also includes a water cooled substrate support 14 having a substrate support surface 16 in the vacuum chamber 18 defined in the housing 4. Surface 16 is used to support substrate 20 in chamber 18. The substrate support 14 functions as a cathode and is connected to the bias RF generator 22 through a matching circuit 24. The generally cylindrical sidewall 30 of the housing 4 connects the lower portion 32 of the housing 4 to the dielectric enclosure 6. Side wall 30 functions as an anode.

The processing gas enters the vacuum chamber 18 in a region surrounding the substrate 20 through two sets of twelve nozzles 34, 34a evenly spaced apart. The nozzles 34, 34a are arranged in a ring pattern and are fluidly coupled to the gas manifolds 36, 36a, respectively. Manifolds 36 and 36a are processed from first and second gas sources 35 and 35a through first and second gas controllers 33 and 37a and first and second gas supply lines 39 and 39a. Supply gas. Each nozzle 34, 34a has a hole 38 at its distal end. The holes 38 of the nozzles 34, 34a are arranged on the periphery of the substrate support 14 and are therefore arranged on the perimeter 42 of the substrate 20. The vacuum chamber 18 is exhausted through the exhaust port 44.

Various components of the chamber 2 are controlled by a processor (not shown). The processor operates under the control of a computer readable medium (also not shown). The computer program commands various operating parameters, such as time, mixing of gases, chamber pressure, substrate support temperature and RF power level.

The present invention is improved in the structure already disclosed by providing an improved gas delivery component 65 disposed on a substrate. In a preferred embodiment, the gas delivery component 65 comprises a gas passage 70 formed in a body 72 mounted on top of the closure 6. The central nozzle 56 passes through the opening 74 formed in the upper portion 75. The nozzle 56 and the opening 74 provide an annular hole 76 in fluid communication with the vacuum chamber 18 and the gas passage 70. A fluid seal 78 is provided between the body 72 and the top 75. The gas is therefore constrained by the fluid seal 78 through the passage 70 and finally progresses along the annular hole 76 into the area defined between the body 72 and the top 75.

In a preferred embodiment, the apparatus of the present invention is used to deposit FSG films from silane, oxygen and SiF ₄ precursor gases. In this embodiment, the present invention preferably introduces a mixture of SiF ₄ and oxygen from the first gas source 35 into the chamber 18 through the aperture 38 of the nozzle 34. This leads to cost savings by simplifying gas delivery. Silane SiH ₄ is preferably conveyed from the second gas source 35a into the chamber 18 through the second gas controller 37a and the nozzle 34a. In addition, a third gas source 58 is preferably used to introduce silane (or a mixture of silane and SiF ₄ ) from the substrate 20 into the chamber 18. In this regard, oxygen is also directed from the position above the substrate 20 through the passage 70 and the annular aperture 76 into the chamber 18 along a flow path separate from the flow path of the silane.

Oxygen can be mixed with a relatively stable gas, such as SiF ₄ . However, due to the reaction properties of silane and oxygen, these components must be maintained individually until their entry into the chamber 18. To achieve this, individual nozzles 34 and 34a are used in the area around the substrate support 14. Oxygen is also introduced through the gas passage 70 formed in the body 72. By injecting oxygen in this way, gases such as fluorine components, which may likewise have a deleterious effect on the fluid seal 78, are prevented from reaching the fluid seal by a cleaning phenomenon or a cleaning phenomenon of the oxygen flow. In other embodiments, gases other than oxygen may also be used to prevent the seal 78 from deteriorating.

Another advantage of transporting oxygen through the gas passage 70 is that the oxygen has a relatively long residence time when compared to silane or some other gas. Because of the short residence time of the silane, the silane can decompose relatively quickly as it enters through the hole 76, forming particulates in the hole and causing upstream of the hole in the passage 70. Molecular oxygen has a longer residence time than silane and therefore no problem occurs when oxygen is transported through the hole 76 instead.

Deposition of FSG films in this manner results in stable films (without HF or H ₂ O gas release at temperatures up to 450 ° C.) with dielectric constants below 3.5, and even below 3.4 or 3.3. This low dielectric constant value is achieved in a generally uniform manner across the substrate 20. Uniform reduction in dielectric constant is important because device size is reduced and capacitance between closely spaced conductors will naturally increase. In order to reduce capacitance and increase the device's operating speed, the dielectric constant of the deposited dielectric film must be reduced.

Regarding the uniformity of gas distribution using the above described structure, the uniform dielectric constant also depends on the temperature uniformity and the sputtering uniformity across the substrate 20. For example, filed on April 25, 1996 for the description of a structure that can be used to achieve a more uniform temperature distribution along the substrate and named as a substrate support having a pressure zone with reduced contact area and temperature feedback. See US patent application Ser. No. 08 / 641,147, assigned to Applied Materials, Inc. US Patent No. 08 / 389,888, filed Feb. 15, 1995 and named Automatic Frequency Tuning for RF Power Sources of Inductively Coupled Plasma Reactors, and Plasma Sources with Electrically Variable Density Profiles, filed on July 26, 1995 US Patent Application No. 08 / 507,726, also assigned to Applied Materials, Inc., discloses a structure for enhanced sputtering uniformity.

Changes in the overall flow of SiF ₄ and silane affect the deposition rate and throughput. High throughput requires high bias power from bias power source 22 to form high sputtering and high etch rate. Since the etch rate is strongly influenced by the temperature of the substrate, high bias power and high throughput are only possible if temperature uniformity across the substrate 20 is achieved.

The determination of the amount of SiF ₄ , silane (SiH ₄ ) and oxygen to be used forms the complexity of the whole new layer. Assuming that the flow rates of silicon (eg SiH ₄ and SiF ₄ ) remain constant, it is believed that several basic reports can be formed considering the use of these different configurations. If too little oxygen is used, the deposition rate is extremely low, forming too inefficient treatment. Too little oxygen can leave a silicon rich film with excess fluorine incorporated into the film. If too much oxygen is used, the resulting film becomes more USG and the dielectric constant becomes higher. If too much SiF ₄ is used, it can lead to aging problems, which are caused over time because fluorine is released without being tightly bound in the complex chemical state of the resulting film and leads to degradation of the device. Too much silane will cause the membrane to behave more like USG and therefore lead to undesirable levels of dielectric constant.

The optical amounts of oxygen, SiF ₄ and silane at the substrate surface are in stoichiometric proportions. However, the stoichiometric ratio of the flowing gas in the deposition chamber, including chamber 2 and other deposition chambers, will result in a gas ratio at the substrate surface that is not the stoichiometric ratio. The actual proportion of gas flowing into the deposition chamber required to achieve the stoichiometric ratio at the substrate surface will vary from the stoichiometric ratio at least in part depending on the structure of the particular chamber. Less gas is wasted so that a gas flow rate that is more effective for the chamber and closer to stoichiometric amounts can be used.

In order to determine the appropriate relative flow rates of SiF ₄ , silane and oxygen for a particular chamber to achieve a desired dielectric constant of 3.5 or less, preferably 3.4 or less and more preferably 3.3 or less, the ratio of the three components is determined by the substrate 20. It can be altered in any desired manner to form multiple dielectric films on it. The dielectric constants at different locations along each dielectric film can then be measured. However, some are limited to the relevant amounts that are listed. Ratio of SiF ₄ should be approximately 40% to 60% of total silicon fed gas so as to reduce or eliminate the problems that result in too much or too little SiF ₄ and silane. Oxygen will be between about 60% and 100% of the total silicon feed gas.

4 shows the results of a test set performed by varying the ratio of SiF ₄ : silane: oxygen. Select the whole reaction gas flow rates (which results in a certain amount of the silane), that is, SiF ₄ and the flow rate for the combination of the silane, that is, SiF ₄ and (resulting in the amount of silicon constant) flow rate for the compounds of the silane and , by dividing the sum between SiF ₄ and silane in order to obtain a number of the ratio of SiF ₄ and the silane and varying the oxygen flow using this rate in the following, the dielectric constant for the oxygen flow is formed in the graph shown in Figure 4 . This type of graph provides very useful data.

Plot A resulting from 44 sccm SiF ₄ vs. 36.4 sccm silane results in a dielectric constant that varies from 3.4 to about 3.8 at an oxygen flow rate of about 110 sccm at an oxygen flow of about 62 sccm. It is not clear from the graph that the minimum dielectric constant is for this ratio of SiF ₄ to silane. However, the minimum value indicates that it occurs at an inappropriately low oxygen flow rate. Plot B with a sccm flow rate ratio of 36 to 44.4 SiF ₄ to silane gives the lowest dielectric constant, about 3.2, at an oxygen flow of 60 sccm. Plots C and D have minimum dielectric constants of about 3.5 and 3.6, respectively. From this graph it can be seen that for a particular ratio of SiF ₄ to silane, the ratio for plot B gives the lowest dielectric constant with oxygen flow at an acceptable level. A review of plots A and B suggests that the properties of SiF ₄ versus silane between the properties for these two plots can yield lower dielectric constants than can be achieved with properties for plot B.

Accordingly, the present invention provides a useful and effective method of determining how to achieve films with low dielectric constants using SiF ₄ (or other fluorine supply gas) and silane chemistry to achieve reduced dielectric constants. While the methods previously described are currently employed to select a single sum reaction gas flow rate for each test, other methods for orderly collection of dielectric constant information can also be pursued. For example, all three variables may be required to be changed within the overall parameter.

In use, a film having a low dielectric constant can be deposited on the substrate 20 by first determining the proper flow rate of the SiF ₄ , silane and oxygen in the already disclosed method, typically by plotting different test results. When the required rate for a particular chamber is determined, silane enters the chamber 18 from the second gas source 35a, a mixture of silane and SiF ₄ flows into the chamber from the third gas source 58, and oxygen From the oxygen source 71 is introduced into the chamber, a mixture of oxygen and SiF ₄ is introduced from the first gas source 35 into the chamber 18. Argon also flows in from the first and third sources 35, 58. Deposition uniformity is also assisted by ensuring that the temperature of the substrate 20 is uniformly controlled on the substrate surface, and by the use of variable frequency source RF generators 10 and 11 to assist in achieving uniform sputtering.

The embodiment already described is designed for a substrate 20 having a diameter of 8 inches (20 cm). Larger diameter substrates, such as substrates having a diameter of 12 inches (30 cm), may require the use of multiple central nozzles 56a as shown in FIG. 5 by the nozzle arrangement 56 '. In this embodiment the deposition thickness change plot will probably have three bumps (as shown in FIG. 3), four bumps or five bump shapes. The particular shape for the deposition thickness plot will be affected by the shape, number, direction and spacing of the central nozzle 54A and the aperture 64.

In addition to the aperture 76, oxygen may also enter the chamber 18 through a number of downward and outwardly extending passageways 80 as shown in FIG. 6. Each passage 80 has a hole 82 through which oxygen enters the chamber 18. If desired, other gases, such as argon, may be mixed with one or both of silane passing through the holes 64 or annular holes 76 or oxygen passing through the holes 82.

Modifications and variations may be made to the disclosed embodiments without departing from the spirit of the invention as defined in the following claims. For example, the central nozzle 56 may be replaced by the shower head form of a gas distributor having multiple outlets or circular arrays of gas outlets. Similarly, nozzles 34, 34a or 56a may be replaced by a ring or ring shaped structure having a gas outlet or hole through which process gas is delivered into chamber 18. Although separate nozzles 34 and 34a are preferred, a single set of nozzles 34 can be used to supply silane and SiF ₄ rather than oxygen. The hole 76 may include a number of small openings arranged in a circular shape near the central nozzle 56 rather than as an annular ring. In addition, the oxygen source 71 and the third gas source 58 may be switched such that the source 71 is connected to the nozzle 56 and the source 58 is connected to the passage 70.

In addition, gases other than silane, oxygen and SiF ₄ may be used. Other silicon sources such as tetraethyloxysilane (TEOS), other oxygen sources such as N ₂ O, and fluorine sources such as C ₂ F ₆ , CF ₄ and the like can be used. In addition, the chambers of the present invention can be used to deposit other halogen doped films, USG films, low k carbon films, and the like. In some of these embodiments, for example embodiments in which a low k carbon film is deposited, oxygen may not be included as the process gas. Therefore, other gases, such as nitrogen, will enter through the holes 76 in this embodiment. It is contemplated that such equivalents and alternatives may be included within the scope of the present invention. Although the present invention has been described above in accordance with one preferred embodiment of the present invention, various modifications may be made without departing from the spirit of the present invention as defined by the appended claims. It is obvious to those skilled in the art.

The present invention provides a dielectric film with a low dielectric constant whereby a uniform distribution of gases combined with the use of an optimum flow rate for each gas results in a uniformly low dielectric constant across the film.

Claims (21)

A first gas distributor having a housing defining a chamber, a substrate support having a substrate support surface within the chamber, a first outlet opening into the chamber around the substrate support surface, constant from a central region of the substrate support surface A second gas distributor having a second outlet spaced therebetween and a third gas distributor having a third outlet opening into the vacuum chamber at a central location on the substrate support surface, the third outlet being the And a second outlet. The apparatus of claim 1, wherein the housing includes a top, and the second gas distributor includes an extension passing through the top and terminating in the chamber from the second outlet. 3. The apparatus of claim 2, wherein the upper portion defines an access opening through the housing, the second gas distributor further comprising a body mounted on the upper portion overlapping the access opening, between the body and the upper portion. A captured fluid seal surrounds the access opening, a passage defined in part by the fluid seal and fluidly coupled to the third outlet, such that a passage of gas along the passage results in the gas from the chamber being sealed. Substrate processing apparatus characterized in that it is assisted not to contact. The substrate processing apparatus of claim 1, wherein the third outlet includes a plurality of openings. The apparatus of claim 1, wherein the third outlet comprises an annular hole. A first gas distributor having a housing defining a chamber, a substrate support having a substrate support surface in the chamber, a first outlet opening into the chamber around the substrate support surface, and spaced apart from and overlapping the substrate support surface And a gas distributor for supplying oxygen having a second gas distributor having a second outlet and a third outlet opening into the vacuum chamber at a central location on the substrate support surface. 7. The apparatus of claim 6, wherein the housing includes an upper portion defining an access opening, wherein the selected one of the oxygen supply distributor and the second gas distributor includes a body mounted on the upper portion overlapping the access opening, The selected second gas distributor includes an extension that passes through the access opening and terminates in the vacuum chamber from the second outlet, wherein a fluid seal captured between the body and the top surrounds the access opening, A passage of gas partially defined by the fluid seal and fluidly coupled to the outlet of the other gas distributor, the passage along the oxygen supply passage assisting the gas from within the chamber from contacting the seal. Deposition chamber. 8. The deposition chamber of claim 7, wherein said other gas distributor is said oxygen distributor gas distributor. 8. The deposition chamber of claim 7, wherein said housing comprises a dielectric enclosure, said dielectric enclosure comprising said top. 8. The deposition chamber of claim 7, wherein said passageway comprises a passageway surrounding said extension through said access opening. 8. The deposition chamber of claim 7, wherein said passageway comprises a plurality of outwardly and downwardly extending passageways spaced from said extension and defining an additional outlet of said outlet of said other gas distributor. 7. The deposition chamber of claim 6, wherein said oxygen supply gas distributor comprises a plurality of said third outlets. 7. The deposition chamber of claim 6, further comprising an induction coil mounted to the housing and coupled to a radio frequency generator. 7. The deposition chamber of claim 6, wherein said first gas distributor comprises a plurality of nozzles spaced evenly with respect to the center of said substrate support surface. 7. The deposition chamber of claim 6, wherein said first gas distributor comprises a first and a second set of nozzles, said first set of nozzles being fluidly insulated from said second set of nozzles. 7. The deposition chamber of claim 6, wherein said second gas distributor comprises a nozzle and said second outlet comprises a single hole. 7. The deposition chamber of claim 6, wherein said second gas distributor comprises a plurality of nozzles and said second outlet comprises a plurality of holes. A deposition chamber in the form of a deposition chamber comprising a substrate support and a vacuum chamber housing a processing gas distributor having a first processing gas outlet disposed around the substrate support, wherein the second processing gas is positioned at regular intervals on the substrate support. And a gas distributor for supplying oxygen having a second process gas distributor having an outlet and a third outlet centrally spaced on the substrate support. 19. The deposition chamber of claim 18, wherein said second process gas outlet is defined by a nozzle and said third outlet surrounds said nozzle. A method for depositing a film on a substrate in a deposition chamber, the method comprising: injecting a first process gas into the chamber at a plurality of locations surrounding the substrate in the chamber; Injecting a second process gas into the chamber in one region and injecting an oxygen supply gas into the chamber in a second region centered at regular intervals on the substrate; Deposition method. A method for depositing a film on a substrate in a deposition chamber, the method comprising: injecting a first processing gas into the chamber at a plurality of locations surrounding the substrate in the chamber, the first spaced first facing the substrate Injecting a second process gas into the chamber in a region and injecting a third process gas into the chamber in a second region disposed at regular intervals facing the substrate. Deposition method.