KR19980085876A - Particle removal apparatus of semiconductor device manufacturing equipment and semiconductor device manufacturing equipment and particle removal method using the same - Google Patents

Abstract

Particle removal device of a semiconductor device manufacturing facility and a semiconductor device manufacturing facility and particle removal applying the same to remove particles distributed in a chamber in which a wafer is located so as to prevent contamination and process defects by particles on the wafer until the semiconductor device is manufactured. It is about a method.

The present invention provides a lid housing for detachably installing the open portion of the body in which the wafer is accommodated, a support made of an insulating material and installed inside the lid housing, and supported by the support in the form of a metal plate. And a plurality of electrode plates which are arranged to face each other at regular intervals and the power lines for applying power of different electrodes to each of the positive electrode plates so that the opposite electrode plates have different electrical polarities. do.

Therefore, according to the present invention, the static electricity is formed to easily remove particles remaining in the space where the wafer is located, thereby forming a high level of cleanliness in the space, thereby preventing contamination of the wafer and process defects caused by the particles. It is effective.

Description

Particle removal apparatus of semiconductor device manufacturing equipment and semiconductor device manufacturing equipment and particle removal method using the same

The present invention relates to a particle removing device of a semiconductor device manufacturing facility, a process chamber using the same, and a method of forming cleanliness according to the present invention, and more particularly, to prevent contamination and process defects caused by particles on a wafer until the semiconductor device is manufactured. The present invention relates to a particle removing device of a semiconductor device manufacturing facility for removing particles distributed in a space where a wafer is located, a semiconductor device manufacturing facility and a particle removing method using the same.

In general, a wafer is manufactured as a semiconductor device as a process of photographing, diffusion, etching, chemical vapor deposition, and metal deposition is repeatedly performed.

The interior of the space where the wafer is located, including the respective process chambers that perform these processes, requires a high level of cleanliness to prevent contamination of the wafer.

Such cleanliness refers to the degree of contamination of particles and the like from the space where the wafer is located and the surface of each component in contact with the wafer.

As a method for forming the above-mentioned cleanliness, there is provided a method of discharging various particles including air by providing a vacuum pressure inside the space, or a method of cleaning and using a surface of a part contacting the wafer. An example of the configuration and method for the same will be described with reference to the process chamber of the semiconductor device manufacturing equipment provided with the vacuum pressure shown in FIG.

As shown in FIG. 1, the process chamber 10 includes a main body 12 in which a wafer is accommodated, and a discharge port connected to a vacuum pump 14 and a connection pipe 16 on one side of the main body 12. It consists of a configuration including (18).

In addition, a load lock unit 20 having a transfer robot (not shown) is connected to one side of the main body 12, and the wafer is loaded into the main body 12 by the transfer robot of the load lock unit 20. Or unloaded.

In this configuration, in order to perform the process, first, various kinds of gases and particles including air in the main body 12 are discharged by a vacuum pressure provided through the outlet 18 to form a predetermined vacuum and cleanliness.

Subsequently, a wafer is introduced into the main body 12 by the transfer robot, and the process is performed after forming appropriate process conditions by driving various auxiliary devices (not shown) provided in the main body 12.

However, the above-mentioned particles are various in kind, such as relatively light, having electrical polarity or strong adhesion, and these particles are not all discharged by the vacuum pressure provided, but are floating in the main body. It remains distributed or attached to each component part inside the main body.

Therefore, the various particles described above during the process are dropped on the wafer on which the process is performed has a problem of causing contamination of the wafer and process failure.

In addition, when particles are deposited on the wafer even in a space in which no vacuum pressure is formed, there is a problem that the wafer is contaminated or acts as a factor of process defect during the process.

SUMMARY OF THE INVENTION An object of the present invention is to manufacture a semiconductor device capable of easily removing various particles remaining in a space where a wafer is located to increase cleanliness inside a process chamber, thereby preventing wafer contamination and process defects and performing a stable process. The present invention provides a particle removal device of a facility, a semiconductor device manufacturing facility, and a particle removal method using the same.

1 is a cross-sectional view schematically showing the configuration of a conventional semiconductor device manufacturing facility.

2 is a cross-sectional view schematically showing the configuration of a particle removing device according to an embodiment of the present invention.

3 is a cross-sectional view showing the configuration of a semiconductor device manufacturing facility equipped with a particle removing device according to the present invention.

Figure 4 is a perspective view showing another embodiment according to the configuration of the support for supporting the electrode plate of the particle removing device according to the present invention.

* Explanation of symbols for the main parts of the drawings *

10, 56: semiconductor device filer 12, 32: main body

14: vacuum pump 16: connector

18: outlet 20: load lock portion

30: particle removal device 34: lid housing

36: support base 38a, 38b, 62a, 62b: electrode plate

40: power supply line 42: cleaning gas supply nozzle

44: nozzle 46: blocking plate

48: cut-off housing 50: lead wire

52: switch 54: connection

58: rim 60: support bar

The present invention for achieving the above object is formed by cutting one side portion of the main body in which the wafer is accommodated, the lid portion housing is installed to enable the airtight maintenance and separation of the open portion of the main body, and made of an insulating material and the lid The support plate installed inside the secondary housing, the plurality of electrode plates which are supported by the support in the form of a metal plate at a predetermined interval from each other and installed opposite to each other and the opposing electrode plates have different electrical polarities, respectively It characterized in that it comprises a power line for applying the power of different electrodes for each.

In addition, the support is installed in the inner center portion of the lid housing in the shape of supporting the center portion of the electrode plate, or the edge for supporting the edge portion of each electrode plate, and the support bar for supporting the edge It is preferable to install in the lid housing in such a configuration.

In addition, it is preferable that at least one cleaning gas supply nozzle is provided at a predetermined position of the housing or the support to inject and supply the cleaning gas at a predetermined pressure to the respective component parts inside the main body.

In addition, the cleaning gas supply nozzle is preferably installed through the rod-shaped end portion having a predetermined length in the central portion of the lid housing, the nozzle of the cleaning gas supply nozzle to the cleaning gas to each part inside the body The rotatable installation is effective, and the cleaning gas is preferably nitrogen gas having low reactivity.

On the other hand, it is effective to produce the electrode plate in a plate shape or a net shape having a plurality of holes.

In addition, it is preferable to connect and install a connecting portion for selectively discharging the charged electrode to each component part inside the main body by the power applied to the electrode plate.

Preferably, the connection part includes a conductive wire connected to each component part and the electrode plate inside the main body, and a switch connected to the other end of each conductive wire and selectively grounded.

Meanwhile, in blocking the power applied to the electrode plate, a blocking plate is provided to enable airtightness between the lid housing and the open portion of the body to selectively block particles from the electrode plate from flowing into the main body. It is preferable to install the provided shield housing.

In addition, the blocking plate is preferably installed to enable the airtight maintenance inside the main body by blocking in a sliding manner on an extended side of the blocking unit housing.

Another invention for achieving the above object is a main body accommodating the wafer and the one side is open, a shield housing for covering the airtight holding on the open one side of the main body, the airtight holding and separation outside of the shield housing Is coupled to the lid housing, the support is installed on the inner portion of the lid housing with an insulating material, the electrode plate is supported by the support and is installed at a predetermined interval from the metal material and the adjacent electrode plates are different from each other It characterized in that it comprises a power line for applying power to different electrodes to have an electrical polarity.

In addition, it is preferable to include a cleaning gas supply nozzle for supplying the cleaning gas at a predetermined pressure to the inner portion of the main body, the cleaning gas supply nozzle is installed in the lid housing or at least one support object desirable.

On the other hand, the method for forming the cleanliness to achieve the above object is to form one side of the main body in which the wafer is accommodated, a plurality of electrode plates and cleaning gas supply nozzles provided opposite to each other by a shield housing provided with a shield plate, the support Installing the provided lid housing on the open side of the main body, providing a vacuum pressure inside the main body while the blocking plate is opened, and generating static electricity by applying power to the electrode plate. And blocking the inside of the main body with the blocking plate, cutting off the power applied to the electrode plate, and supplying the cleaning gas through the cleaning gas supply nozzle to form a normal pressure state between the blocking plate and the lid housing. And separating the lid housing and the electrode plate. After washing each part of a housing lid comprises a step of recombination.

In addition, the vacuum pressure is provided in the inside of the main body and the blocking plate is open, the cleaning gas supply nozzle through the cleaning gas supply nozzle to the respective constituent parts of the inside of the main body is preferably further provided with a predetermined pressure, In the cleaning gas, it is preferable to use nitrogen gas having weak reactivity.

Meanwhile, a connection part including a conductive wire connected to each of the electrode plate and each part of the main body and a switch connected to the other end of the conductive wire and selectively grounded is formed, and the blocking plate is blocked and the lid housing It is preferable to further include the step of releasing the electrical polarity charged to each of the constituent parts of the electrode plate and the main body through the connecting portion in a state that does not separate.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

The particle removal device 30 according to the present invention is configured to open one side of the main body 32 in which the wafer is accommodated, and can be kept airtight in a shape in which the lid housing 34 covers the open one side. To be installed.

A rod-shaped support 36 made of an insulating material is installed at an inner center portion of the lid housing 34, and the support 36 is a plurality of plate-shaped electrodes having a predetermined thickness. It is fixed to face each other at regular intervals in a shape penetrating the plate (38a, 38b).

In addition, one side of each of the electrode plates 38a and 38b described above is connected to a power line 40 for applying power of different electrodes, and the other end of the power line 40 is a lid housing 34. It protrudes outwardly and is selectively connected to a power supply (not shown).

In addition, when power of different electrodes is applied to the above-described electrode plates 38a and 38b, the opposite electrode plates 38a and 38b are electrically polarized with each other to generate static electricity.

The static electricity generated in this way guides the particles distributed inside the main body 32 to the electrical attraction force and is thus attached to the electrode plates 38a and 38b.

Here, the shape of the above-described support base is formed in the shape of an electrode plate 62a, 62b having an edge 58 formed to a predetermined thickness and a support bar 60 supporting the edge 58 at a predetermined interval, as shown in FIG. It can be manufactured and installed to support the edge portion of the), the electrode plate (62a, 62b) is a plate-shaped having a net or a plurality of holes so that the particles inside the body 32 to easily flow between the electrode plate (62a, 62b) Can also be produced.

On the other hand, the cleaning gas is injected at a predetermined pressure in a predetermined position of the lid housing 34 or the end of the support 36 in a state where a vacuum pressure is provided to remove particles attached to each part of the body 32. A cleaning gas supply nozzle 42 is provided to allow the air to flow out.

The cleaning gas supply nozzles 42 thus installed are preferably rotatably installed or a plurality of nozzle 44 end portions, and the cleaning gas supplied in this way is generally a nitrogen gas having weak reactivity.

On the other hand, when the above-described configuration is installed in the process chamber, the static electricity generated by the electrode plates 38a and 38b may affect various process conditions and wafers and cause process defects.

In this case, it is necessary to generate static electricity in the initial state before the wafer is introduced to form the required cleanness, and then cut off power applied to the electrode plates 38a and 38b to perform the process.

However, when the power applied to the electrode plates 38a and 38b is cut off as described above, the particles attached to the electrode plates 38a and 38b are separated from the electrode plates 38a and 38b. It may be introduced into the main body and the wafer may be contaminated or process defect may be caused.

Therefore, in order to prevent this, before the power is cut off to the electrode plates 38a and 38b, the blocking plate 46 is provided with a blocking plate 46 which selectively closes the open portion of the main body 32 from the electrode plates 38a and 38b. The sub housing 48 is successively installed so that airtightness can be maintained between the open portion of the main body 32 and the lid housing 34.

In addition, the above-described blocking plate 46 is installed to enable sliding reciprocating movement through one extended side of the blocking unit housing 48 to open and close both sides, and the blocking plate 46 during the closing movement of the blocking plate 46. The side portion is in close contact with a predetermined portion of the inner wall of the blocking housing 48 to maintain the airtight inside the main body 32.

On the other hand, as described above, when the power applied to the electrode plates 38a and 38b is cut off, each component part inside the main body 32 remains in a charged state by static electricity.

The charged state thus forms irregular process conditions during the process, which causes process defects, and thus includes a switch 52 for selectively grounding the conductive wires 50 connected to the respective portions inside the body 32 before the wafer is introduced. The connection part 54 of a structure is additionally provided.

3 is a cross-sectional view schematically showing the configuration of a process chamber in which a particle removing device according to another embodiment of the present invention is installed, and the same reference numerals are given to the same parts according to the configuration description of the above-mentioned particle removing device. The detailed description thereof will be omitted.

As shown in FIG. 3, the one side portion of the main body 32 provided with the vacuum pressure is opened, and the blocking portion housing provided with the blocking plate 46 has a shape to cover the open portion so as to be kept airtight. The particle removal device 30 including the 48 and the lid housing 34 is installed.

Looking at the process of forming the cleanliness of the interior of the main body 32 according to this configuration, while the wafer is not inserted into the main body 32 while opening the blocking plate 46 of the blocking unit housing 48 at the same time the main body 32 The predetermined vacuum pressure is provided inside).

Subsequently, the cleaning gas is sprayed to the respective components in the body 32 at a predetermined pressure through the cleaning gas supply nozzle 42 provided in the lid housing 34 to remove particles attached to the surface of each of the components.

As described above, the particles and the like separated from the surface of the temporary component portion by the cleaning gas injected are discharged through the vacuum pressure which is continuously provided.

Thereafter, power is applied to the electrode plates 38a and 38b installed in the lid housing 34 to generate static electricity so that the particles are induced in an injured state and attached to the electrode plates 38a and 38b.

After a predetermined time has elapsed in this state, the blocking plate 46 of the blocking part housing 48 is closed from the electrode plates 38a and 38b of the lid part housing 34 so that the inside of the main body 32 can be kept airtight. The power applied to the electrode plates 38a and 38b is cut off.

At this time, each component part of the main body 32 including the above-described electrode plates 38a and 38b maintains the state of being charged by static electricity, so that the switch of the connection part 54 connected to each component part by the conductive wire 50 ( 52) to discharge the charged state by grounding.

In this state, the inside of the main body 32 is formed in such a state that the transfer robot (not shown) of the load lock unit 20 may insert the wafer into a predetermined position in the main body 32 to perform a process.

On the other hand, following the above state, the cleaning gas is supplied between the blocking plate 46 and the lid housing 34 to be formed at an atmospheric pressure, and the lid housing 34 is separated from the blocking housing 48.

The lid housing 34 separated as described above is used by cleaning each component including the electrode plates 38a and 38b and reinstalling the blocking housing 48.

In the above-described process, as the process time is delayed to continuously perform the process of generating static electricity to form cleanliness, the process may be performed at the time of restoring the facility due to component replacement and cleaning or by a particle in the process of performing the process. If a failure occurs, it is preferable to perform the above-described process.

Therefore, according to the present invention, the particles 12 inside the main body 12 through the above-described process, the particles are distributed in the floating state by the particle removal device 30 or particles having an electrical polarity, and sticky particles attached to each component part, etc. This more effectively eliminates process defects caused by particles.

Therefore, according to the present invention, only the particles which are installed in the main body constituting the process chamber and the particles attached to the respective parts of the main body and the particles having the electrical polarity are discharged to the discharge port provided with the vacuum pressure by the injection of the cleaning gas. In addition, by generating static electricity to induce and discharge the remaining particles to form a process state with a higher degree of cleanliness, there is an effect that the process defects caused by various particles is reduced.

Although the present invention has been described in detail only with respect to the described embodiments, it will be apparent to those skilled in the art that various modifications and variations are possible within the technical scope of the present invention, and such modifications and modifications are within the scope of the appended claims.

Claims (20)

A lid part housing in which a portion of the main body in which the wafer is accommodated is cut in such a manner that the open part of the main body can be kept airtight and separated; A support made of an insulating material and installed inside the lid housing; A plurality of electrode plates which are supported by the support in a plate shape made of metal and are formed to face each other at a predetermined interval from each other; And A power supply line for applying power of different electrodes to each of the positive electrode plates such that the opposite electrode plates have different electrical polarities; Particle removal device of a semiconductor device manufacturing equipment, characterized in that comprising a. The method of claim 1, The support is a particle removing device of the semiconductor device manufacturing equipment, characterized in that installed in the inner center portion of the lid housing in a shape to support the center portion of the electrode plate. The method of claim 1, The support is a particle removal device of the semiconductor device manufacturing equipment, characterized in that it comprises an edge for supporting the edge portion of each electrode plate, and a support bar for supporting the edge spaced apart from each other. The method of claim 1, And at least one cleaning gas supply nozzle penetrating and supplying cleaning gas to a predetermined portion of the main body at a predetermined pressure, and is installed through at least one predetermined position of the housing. The method of claim 1, Particles of the semiconductor device manufacturing equipment, characterized in that the cleaning gas supply nozzle for spraying and supplying the cleaning gas to a predetermined portion of the main body through the predetermined portion of the support and the side wall of the lid housing Removal device. The method according to claim 4 or 5, And a nozzle end of the cleaning gas supply nozzle is rotatably installed with respect to each component of the inside of the main body. The method according to claim 4 or 5, The cleaning gas is a particle removal device of the semiconductor device manufacturing equipment, characterized in that the weak reactivity nitrogen gas. The method of claim 1, And said electrode plate is manufactured in a plate shape having a plurality of holes. The method of claim 1, Particle defrosting device of the semiconductor device manufacturing equipment, characterized in that the connecting portion for selectively discharging the charged electrode is installed in each component portion of the main body including the electrode plate in accordance with the cutoff of the power applied to the electrode plate. . The method of claim 9, Wherein the connection part comprises a conductive wire connected to each component part in the main body and the electrode plate, and a switch connected to the other end of each conductive wire and selectively grounded. Particle removal device. The method according to claim 1 or 9, Blocking block provided with a selectively openable blocking plate between the lid housing and the open portion of the body to selectively block the flow of particles from the electrode plate to the inside of the main body in blocking the power applied to the electrode plate Particle removal device of the semiconductor device manufacturing equipment, characterized in that the secondary housing is additionally installed to enable the airtight. The method of claim 11, The blocking plate is a particle removal device of the semiconductor device manufacturing equipment, characterized in that the configuration is opened and closed in a sliding manner on one side of the extended housing. In the semiconductor manufacturing equipment to perform the process by providing a vacuum pressure, A main body accommodating the wafer and having one side open, a blocking part housing covering the wafer so as to be kept airtight, and a lid housing being coupled to the outside of the blocking part housing for holding and separating the wafer; The power supply of the different electrodes so that the support is installed in the inner portion of the lid housing with an insulating material, the electrode plate is supported by the support and is installed at a predetermined interval to the metal and the neighboring electrode plate has a different electrical polarity Semiconductor manufacturing equipment is installed, the particle removal device characterized in that it comprises a power supply line for applying. The method of claim 13, And a cleaning gas supply nozzle for spraying and supplying cleaning gas at a predetermined pressure to the respective components within the main body at a predetermined position of the support. The method of claim 13, And a cleaning gas supply nozzle for spraying and supplying cleaning gas at a predetermined pressure to each component of the inside of the main body at a predetermined position inside the main body. The method of claim 13, A conductive wire connected to each component part of the main body and the electrode plate to selectively discharge an electrode charged to each component part inside the main body including the electrode plate according to the cutoff of the power applied to the electrode plate; And a connection part including a switch connected to the other end of each conductor and selectively grounded, wherein the particle removing device is installed. One side of the main body, which is open at one side of the main body accommodating the wafer, is provided with a shield housing including a blocking plate, and a lid housing including a plurality of electrode plates and cleaning gas supply nozzles installed opposite to each other by a support. Providing a vacuum pressure inside the main body in a state in which the blocking plate is opened in a semiconductor manufacturing facility having a configuration in succession; Generating static electricity by applying power to the electrode plate; Blocking the inside of the main body with the blocking plate; Cutting off the power applied to the electrode plate and supplying a cleaning gas through a cleaning gas supply nozzle to form a normal pressure state between the blocking plate and the lid housing and separating the lid housing; And Recombining each part of the lid housing including the electrode plate after cleaning; Particle removal method of a semiconductor manufacturing equipment, characterized in that consisting of. The method of claim 17, Injecting and supplying cleaning gas at a predetermined pressure to the respective components within the main body through the cleaning gas supply nozzle while a vacuum pressure is provided inside the main body and the blocking plate is opened; Particle removal method of the semiconductor manufacturing equipment, characterized in that further comprising. The method of claim 18, And the cleaning gas is nitrogen gas having low reactivity. The method of claim 17, A connection part including a lead wire connected to each of the electrode plate and each part of the main body, and a switch connected to an end of the lead wire and selectively grounded, and a state in which the blocking plate is blocked and the lid housing Grounding and discharging the charged electrical polarity of each of the component parts of the electrode plate and the main body through the connection unit without being separated; Particle removal method of the semiconductor manufacturing equipment, characterized in that further comprising.