KR19980058581A - Plasma Cleaner for Semiconductor Devices - Google Patents

Abstract

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma cleaner for semiconductor devices, comprising: a magazine on which semiconductor devices are stacked, a first electrode plate on which the magazine is seated, and a plurality of openings are formed, an image of the first electrode plate, A second electrode plate to which the potential difference is applied at a distance opposite to the polarity of the first electrode plate and a magazine, the first electrode plate, and the second electrode plate on which the semiconductor device is stacked, and the inside thereof is vacuum By including a housing for holding in a state, it is possible to improve the shape of the first electrode plate of the plasma cleaning apparatus, which is provided so that various semiconductor devices are cleaned under a plasma state, and also provided so that a plurality of semiconductor devices can be inserted and handled integrally. By improving the structure of the old magazine, various contaminants and foreign substances on the surface of the semiconductor device can be more efficiently The plasma cleaner for a semiconductor device to be cleaned in time.

Description

Plasma Cleaner for Semiconductor Devices

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma cleaner for semiconductor devices, and in more detail, changes the shape of the first electrode plate of the plasma cleaning device provided so that various semiconductor devices are cleaned under a plasma state, and a plurality of semiconductor devices are inserted and integrally formed. The present invention relates to a plasma cleaner for semiconductor devices in which various contaminants and foreign substances on the surface of the semiconductor device can be cleaned more efficiently and in a short time by changing the structure of the magazine provided to be handled.

As shown in FIG. 1, a conventional plasma cleaner for a semiconductor device includes a magazine 120 and a plurality of magazines 120 that allow a plurality of semiconductor devices 100 to be inserted, stacked, and handled simultaneously. A first electrode plate 130 seated on the second electrode plate, a second electrode plate 140 positioned above and below the first electrode plate 130, and having a polarity opposite to that of the first electrode plate 130; The semiconductor device 110, the magazine 120, the first electrode plate 130, the second electrode plate 140 is located in a predetermined space portion and the housing 150 for maintaining the space portion in a vacuum state and And a power supply unit 170 which maintains a predetermined potential difference in the first electrode plate 130 and the second electrode plate 140 from the outside.

In this case, various types of gases may be injected into the housing 150 in the vacuum state, and a negative or ground point is connected to the first electrode plate 130, and the phases of the first electrode plate 130 are separated from each other. In the second electrode plate 140 positioned below, the potential difference is always maintained at a polarity opposite to that of the first electrode plate 130.

In addition, the first electrode plate 130 and the upper and lower second electrode plates 140 are formed of a general metal material, and the shape thereof is in the form of a square plate.

Meanwhile, a magazine seated on the first electrode plate 130 and on which a plurality of semiconductor devices 110 are stacked is formed in a rectangular parallelepiped, one side of which is opened, as shown in FIG. 1B. The plurality of rails 127 are formed to be long, and each of the rails 27 can be inserted and stacked in the rails 27, so that the plurality of semiconductor devices 110 can be easily handled. have. In addition, the magazine 120 may have a shape in which the upper and lower portions thereof are partially open.

The plasma cleaner for the semiconductor device 110 having the above structure has a potential difference between the first electrode plate 130 and the second electrode plate above and below the power supply unit 170 while keeping the inside of the cleaner in a vacuum state. When applied to 140, the accelerated electrons and gas molecules collide with each other, and the gas is separated into electrons and cations and becomes a so-called plasma state.

In the plasma state as described above, various foreign substances deposited on the semiconductor device 110 in the magazine 120 seated on the first electrode plate 130, that is, sebum, resin additive, release agent, wax, and pump oil secreted by the human body Almost all organic materials such as solvents and the like are decomposed and removed from the surface of the semiconductor device 110 to be cleaned. Here, reference numeral 160 schematically shows a state of the plasma formed around the magazine 120 and the first electrode plate 130, and indicates that plasma is concentrated around the first electrode plate 130.

However, in the plasma cleaner for the semiconductor device having the above structure, the first electrode plate 130 on which the magazine 120 is mounted is in the form of a square plate, and only one place of the hexagonal magazine 120 is opened. By taking the form, it is difficult to infiltrate the plasma evenly onto the surfaces of the plurality of semiconductor devices 110. That is, the magazine 120 seated on the first electrode plate 130 is a factor that hinders the plasma diffusion into the semiconductor device 110 that is stacked in a large number thereof, and also the lower portion of the first electrode plate 130. The plasma formed in the plasma is not involved in the cleaning operation, so that the semiconductor devices 110 stacked on the magazine 120 are not uniformly cleaned and the cleaning time is consumed for a long time.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned conventional problems, and improves the shape of the first electric plate of the plasma cleaning apparatus, which is provided such that various semiconductor devices are cleaned under a plasma state, and a plurality of semiconductor devices are inserted to integrate the same. The present invention provides a plasma cleaner for semiconductor devices in which various contaminants and foreign substances on the surface of the semiconductor device can be removed more efficiently and in a short time by improving the structure of the magazine provided to be handled.

1A and 1B are state diagrams illustrating a magazine in which a plasma cleaner for a semiconductor device and a plurality of semiconductor devices are inserted and seated.

2 is a state diagram showing a plasma cleaner for a semiconductor device according to the present invention.

3 is a diagram illustrating a magazine seated on a first electrode plate of a plasma cleaner for semiconductor devices according to the present invention.

4A and 2B are plan views showing the form of the first electrode plate among the components of the plasma cleaner for semiconductor devices according to the present invention.

* Explanation of symbols for the main parts of the drawings

110: semiconductor device, 120: magazine, 123: open hole, 127: rail, 130: first electrode plate, 140: second electrode plate, 143: opening, 150: housing ( Housing), 160: plasma state, 170: power supply unit

In order to achieve the above object, a plasma cleaner for a semiconductor device according to the present invention includes: a magazine in which a plurality of semiconductor devices are inserted and stacked; A first electrode plate having a plurality of openings formed therein so that the plurality of magazines can be seated thereon; A second electrode plate having a potential difference applied to a polarity opposite to the polarity of the first electrode plate at a predetermined distance from the top and the bottom of the first electrode plate; And a housing for wrapping the magazine, the first electrode plate, and the second electrode plate on which the semiconductor device is stacked to maintain the inside thereof in a vacuum state.

Here, the magazine is formed into a hexahedral shape and each side further forms a predetermined open hole, and the inside of the housing may be injected helium, argon and oxygen gas to achieve the object of the present invention.

Hereinafter, a plasma cleaner for a semiconductor device according to the present invention will be described in detail with reference to the accompanying drawings, in which a person skilled in the art can easily carry out the present invention. As follows.

2 is a state diagram showing a plasma cleaner for a semiconductor device according to the present invention.

As shown, the plasma cleaner for a semiconductor device according to the present invention includes a plurality of semiconductor devices 110 inserted therein and a stacked magazine 120 positioned at a central portion thereof, and a plurality of magazines 120 mounted thereon. The first electrode plate 130 having the opening 143 of the top is supported by the bottom surface of the magazine 120.

Here, the magazine 120 is molded in the form of a rectangular parallelepiped as shown in FIG. 3, and both surfaces thereof are completely open, and a plurality of rails 127 are formed in the open side of the plurality of semiconductor devices 110. ) Can be stacked by insertion. In addition, a plurality of open holes 123 are formed on the remaining four surfaces, such that plasmas formed in and around the magazine 120 may uniformly act on the surfaces of the plurality of semiconductor devices 110. In addition, the semiconductor device 110 inserted into the magazine 120 may be various. For example, all of the semiconductor devices 110 which need cleaning such as lead frame strips and printed circuit board strips during a pure semiconductor chip or semiconductor package process are all available. Is possible.

Meanwhile, the first electrode plate 130 having the opening 143 is illustrated in a plan view showing the shape of the first electrode plate 130 among the components of the plasma cleaner for the semiconductor device 110 of FIGS. 4A and 4B. As described above, a metal square plate was used to form an overall outline, and a plurality of openings 143 were used. Here, the shape of the opening 143 may be designed in various ways such as square, triangle, and circle. In addition, the first electrode plate 130 is made of a wire mesh-like mesh to allow maximum freedom of movement in the plasma state 160 to maximize the cleaning effect of the semiconductor device 110. It was.

In addition, the second electrode plate 140 is installed so that a potential difference can be applied to the polarity opposite to the polarity of the first electrode plate 130 with a predetermined distance therebetween up and down of the first electrode plate 130. have. That is, when the second electrode plate 140 is negative, the second electrode plate 140 is positive or ground, and when the first electrode plate 130 is positive or ground, The second electrode plate 140 positioned under the negative polarity is formed.

In addition, a housing 150 for wrapping the magazine 120, the first electrode plate 130, and the second electrode plate 140 on which the semiconductor device 110 is stacked and maintaining the inside thereof in a vacuum state is installed. In the housing 150, a large amount of electrons is generated to inject helium, argon, or oxygen gas to easily form the plasma state 160.

Finally, a power supply unit 17 for applying a high voltage to the first electrode plate 130 and the second electrode plate 140 in the housing 150 is installed. The molecular combination of helium, argon and oxygen gas is a gas. The plasma cleaner for the semiconductor device 110 according to the present invention is constructed by using an AC power source having a frequency of about 13.56 MHz or more so as to be separated in the form of discharge.

The operation of the plasma cleaner for the semiconductor device 110 according to the present invention configured as described above includes a plurality of semiconductor devices 110 inserted into and stacked on the first electrode plate 130 inside the housing 150. ), And after creating a vacuum atmosphere and injecting helium, argon or oxygen gas and applying predetermined power to the first electrode plate 130 and the second electrode plate 140 from the power supply unit 170. One side is positive and the other side is polarized. The polarity is changed in proportion to the frequency of about 13.56 MHz or more, and the electrons emitted from the electrode are accelerated to collide with the gas. To be. Here, the generated electrons are used to continuously maintain the plasma state and disappear.

In this case, the hexahedral magazine 120 seated on the first electrode plate 130 has two surfaces completely open, and the remaining four surfaces have a predetermined open hole 123, and the first electrode plate 130 is further formed. In addition, since the plurality of openings 143 are formed, the atmosphere of the plasma is substantially unaffected by the blocked portions of the magazine 120 and the first electrode plate 130, and evenly interacts with the surfaces of the plurality of semiconductor devices 110. By acting, it decomposes and removes various pollutants and foreign substances on the surface. In addition, as described above, since all the surfaces of the semiconductor device 110 act simultaneously, the cleaning time can be considerably saved.

Although the present invention has been described only in the embodiments as described above, it is not limited thereto and various modifications and changes may be made without departing from the scope and spirit of the present invention.

Accordingly, the plasma cleaner for semiconductor devices according to the present invention includes a magazine in which a plurality of semiconductor devices are inserted and stacked, a first electrode plate having a plurality of openings formed therein so that the magazines can be seated, and the first electrode plate. A second electrode plate to which a potential difference is applied at a polarity opposite to the polarity of the first electrode plate at a predetermined distance from the top and bottom of the first electrode plate, a magazine on which the semiconductor device is stacked, the first electrode plate, and the second electrode plate It comprises a housing for wrapping the inside of the vacuum to keep the inside of the vacuum state, thereby improving the shape of the first electrode plate of the plasma cleaning apparatus equipped with various semiconductor devices to be cleaned under the plasma state and a plurality of semiconductor devices are inserted Various contaminants and foreign substances on the surface of the semiconductor device by improving the structure of the magazine provided to be integrally handled To such more efficiently provide for the semiconductor device to be cleaned in a short time plasma cleaner.

Claims (2)

A magazine in which a plurality of semiconductor devices are inserted and stacked; A first electrode plate having a plurality of openings formed therein so that the plurality of magazines can be seated thereon; A second electrode plate to which a potential difference is applied at a polarity opposite to that of the first electrode plate at a predetermined distance from above and below the first electrode plate; And a housing for wrapping the magazine, the first electrode plate, and the second electrode plate on which the semiconductor device is stacked to maintain the inside thereof in a vacuum state. The plasma cleaner of claim 1, wherein helium, argon and oxygen gas are injected into the housing.