KR19980042711A - 노광 장치 - Google Patents

노광 장치 Download PDF

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Publication number
KR19980042711A
KR19980042711A KR1019970062553A KR19970062553A KR19980042711A KR 19980042711 A KR19980042711 A KR 19980042711A KR 1019970062553 A KR1019970062553 A KR 1019970062553A KR 19970062553 A KR19970062553 A KR 19970062553A KR 19980042711 A KR19980042711 A KR 19980042711A
Authority
KR
South Korea
Prior art keywords
exposure apparatus
chamber
vacuum
thermal insulation
filler
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1019970062553A
Other languages
English (en)
Korean (ko)
Inventor
사부로 가미야
Original Assignee
요시다쇼이치로
가부시끼가이샤니콘
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 요시다쇼이치로, 가부시끼가이샤니콘 filed Critical 요시다쇼이치로
Publication of KR19980042711A publication Critical patent/KR19980042711A/ko
Ceased legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858Environment aspects, e.g. pressure of beam-path gas, temperature
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/2002Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G03F7/70875Temperature, e.g. temperature control of masks or workpieces via control of stage temperature
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70883Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
    • G03F7/70891Temperature

Landscapes

  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1019970062553A 1996-11-25 1997-11-25 노광 장치 Ceased KR19980042711A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP31327596 1996-11-25
JP1996-313275 1996-11-25
JP9280574A JPH10209040A (ja) 1996-11-25 1997-10-14 露光装置
JP1997-280574 1997-10-14

Publications (1)

Publication Number Publication Date
KR19980042711A true KR19980042711A (ko) 1998-08-17

Family

ID=26553831

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019970062553A Ceased KR19980042711A (ko) 1996-11-25 1997-11-25 노광 장치

Country Status (4)

Country Link
EP (1) EP0844532B1 (https=)
JP (1) JPH10209040A (https=)
KR (1) KR19980042711A (https=)
DE (1) DE69711157T2 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100689705B1 (ko) * 2001-05-04 2007-03-08 삼성전자주식회사 투영 렌즈 온도 조절 수단을 구비하는 노광장치

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000016381A1 (en) * 1998-09-14 2000-03-23 Nikon Corporation Exposure apparatus and its manufacturing method, and device producing method
EP1124161A3 (en) * 2000-02-10 2004-01-07 ASML Netherlands B.V. Lithographic projection apparatus having a temperature controlled heat shield
TW588222B (en) * 2000-02-10 2004-05-21 Asml Netherlands Bv Cooling of voice coil motors in lithographic projection apparatus
EP1178357A1 (en) * 2000-08-03 2002-02-06 Asm Lithography B.V. Lithographic apparatus
US6630984B2 (en) 2000-08-03 2003-10-07 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method, and device manufactured thereby
US6598283B2 (en) 2001-12-21 2003-07-29 Cabot Corporation Method of preparing aerogel-containing insulation article
EP1477850A1 (en) * 2003-05-13 2004-11-17 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1491955A1 (en) * 2003-06-27 2004-12-29 ASML Netherlands B.V. Lithographic projection apparatus and device manufacturing method
EP1510867A1 (en) 2003-08-29 2005-03-02 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
US7061579B2 (en) 2003-11-13 2006-06-13 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US6977713B2 (en) * 2003-12-08 2005-12-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4614386B2 (ja) * 2005-02-04 2011-01-19 キヤノン株式会社 位置決め装置、露光装置およびそれを用いたデバイス製造方法
JP2006261273A (ja) * 2005-03-16 2006-09-28 Canon Inc チャンバおよびこれを用いた露光装置
NL1036433A1 (nl) 2008-01-31 2009-08-03 Asml Netherlands Bv Lithographic apparatus, method and device manufacturing method.
NL1036596A1 (nl) * 2008-02-21 2009-08-24 Asml Holding Nv Re-flow and buffer system for immersion lithography.
CN101276150B (zh) * 2008-03-21 2010-06-02 上海微电子装备有限公司 一种步进重复曝光装置
NL2004453A (en) 2009-04-24 2010-10-26 Asml Netherlands Bv Lithographic apparatus having a substrate support with open cell plastic foam parts.
NL2005244A (en) * 2009-09-22 2011-03-23 Asml Netherlands Bv Support or table for lithographic apparatus, method of manufacturing such support or table and lithographic apparatus comprising such support or table.
JP6335480B2 (ja) * 2013-11-11 2018-05-30 キヤノン株式会社 露光装置、およびデバイスの製造方法
WO2015165639A1 (en) * 2014-04-30 2015-11-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2016008641A1 (en) * 2014-07-16 2016-01-21 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2016150631A1 (en) * 2015-03-23 2016-09-29 Asml Netherlands B.V. Lithographic apparatus, and device manufacturing method
JP7360308B2 (ja) * 2019-11-25 2023-10-12 キヤノン株式会社 露光装置、露光方法、および物品製造方法
CN112925175A (zh) * 2021-01-29 2021-06-08 深圳市大族数控科技股份有限公司 一种曝光机

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58119638A (ja) * 1982-01-08 1983-07-16 Seiko Epson Corp 露光装置
JPH02199814A (ja) * 1989-01-30 1990-08-08 Nikon Corp 投影露光装置
US4989031A (en) * 1990-01-29 1991-01-29 Nikon Corporation Projection exposure apparatus
US5395604A (en) * 1993-07-09 1995-03-07 Martin Marietta Energy Systems, Inc. Silica powders for powder evacuated thermal insulating panel and method
US5601897A (en) * 1994-10-17 1997-02-11 Owens-Corning Fiberglass Technology Inc. Vacuum insulation panel having carbonized asphalt coated glass fiber filler
KR100399451B1 (ko) * 1995-04-14 2003-12-11 가부시키가이샤 니콘 노광장치

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4564284A (en) * 1983-09-12 1986-01-14 Canon Kabushiki Kaisha Semiconductor exposure apparatus
JPS62296135A (ja) * 1986-06-17 1987-12-23 Nec Kyushu Ltd 縮小投影型露光装置
JP2753930B2 (ja) * 1992-11-27 1998-05-20 キヤノン株式会社 液浸式投影露光装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58119638A (ja) * 1982-01-08 1983-07-16 Seiko Epson Corp 露光装置
JPH02199814A (ja) * 1989-01-30 1990-08-08 Nikon Corp 投影露光装置
US4989031A (en) * 1990-01-29 1991-01-29 Nikon Corporation Projection exposure apparatus
US5395604A (en) * 1993-07-09 1995-03-07 Martin Marietta Energy Systems, Inc. Silica powders for powder evacuated thermal insulating panel and method
US5601897A (en) * 1994-10-17 1997-02-11 Owens-Corning Fiberglass Technology Inc. Vacuum insulation panel having carbonized asphalt coated glass fiber filler
KR100399451B1 (ko) * 1995-04-14 2003-12-11 가부시키가이샤 니콘 노광장치

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100689705B1 (ko) * 2001-05-04 2007-03-08 삼성전자주식회사 투영 렌즈 온도 조절 수단을 구비하는 노광장치

Also Published As

Publication number Publication date
EP0844532B1 (en) 2002-03-20
DE69711157T2 (de) 2002-08-14
DE69711157D1 (de) 2002-04-25
EP0844532A3 (en) 1999-08-18
JPH10209040A (ja) 1998-08-07
EP0844532A2 (en) 1998-05-27

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