KR102937068B1 - 감활성광선성 또는 감방사선성 수지 조성물, 레지스트막, 패턴 형성 방법 및 전자 디바이스의 제조 방법 - Google Patents
감활성광선성 또는 감방사선성 수지 조성물, 레지스트막, 패턴 형성 방법 및 전자 디바이스의 제조 방법Info
- Publication number
- KR102937068B1 KR102937068B1 KR1020247019037A KR20247019037A KR102937068B1 KR 102937068 B1 KR102937068 B1 KR 102937068B1 KR 1020247019037 A KR1020247019037 A KR 1020247019037A KR 20247019037 A KR20247019037 A KR 20247019037A KR 102937068 B1 KR102937068 B1 KR 102937068B1
- Authority
- KR
- South Korea
- Prior art keywords
- group
- sensitive
- represented
- preferable
- acid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Materials For Photolithography (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JPJP-P-2021-201239 | 2021-12-10 | ||
| JP2021201239 | 2021-12-10 | ||
| PCT/JP2022/044081 WO2023106171A1 (ja) | 2021-12-10 | 2022-11-30 | 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法及び電子デバイスの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20240096807A KR20240096807A (ko) | 2024-06-26 |
| KR102937068B1 true KR102937068B1 (ko) | 2026-03-11 |
Family
ID=86730227
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020247019037A Active KR102937068B1 (ko) | 2021-12-10 | 2022-11-30 | 감활성광선성 또는 감방사선성 수지 조성물, 레지스트막, 패턴 형성 방법 및 전자 디바이스의 제조 방법 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20240329524A1 (https=) |
| EP (1) | EP4446811A4 (https=) |
| JP (1) | JPWO2023106171A1 (https=) |
| KR (1) | KR102937068B1 (https=) |
| CN (1) | CN118451368A (https=) |
| TW (1) | TW202328064A (https=) |
| WO (1) | WO2023106171A1 (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW202513539A (zh) * | 2023-09-26 | 2025-04-01 | 日商Ｊｓｒ股份有限公司 | 感放射線性組成物及圖案形成方法 |
| WO2025115477A1 (ja) * | 2023-11-28 | 2025-06-05 | サンアプロ株式会社 | スルホニウム塩及び酸発生剤 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2021095356A1 (ja) * | 2019-11-12 | 2021-05-20 | 東洋合成工業株式会社 | スルホニウム塩、酸発生剤、レジスト組成物、及びデバイスの製造方法 |
Family Cites Families (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007293250A (ja) * | 2006-03-27 | 2007-11-08 | Fujifilm Corp | ポジ型レジスト組成物およびそれを用いたパターン形成方法 |
| JP2013061648A (ja) | 2011-09-09 | 2013-04-04 | Rohm & Haas Electronic Materials Llc | フォトレジスト上塗り組成物および電子デバイスを形成する方法 |
| JP6075369B2 (ja) | 2012-03-14 | 2017-02-08 | Jsr株式会社 | フォトレジスト組成物、レジストパターン形成方法及び酸拡散制御剤 |
| JP5850873B2 (ja) | 2012-07-27 | 2016-02-03 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、それを用いたレジスト膜、パターン形成方法、及び電子デバイスの製造方法 |
| JP5836299B2 (ja) | 2012-08-20 | 2015-12-24 | 富士フイルム株式会社 | パターン形成方法、感電子線性又は感極紫外線性樹脂組成物、及びレジスト膜、並びに、これらを用いた電子デバイスの製造方法 |
| JP6002705B2 (ja) | 2013-03-01 | 2016-10-05 | 富士フイルム株式会社 | パターン形成方法、感活性光線性又は感放射線性樹脂組成物、レジスト膜、及び、電子デバイスの製造方法 |
| JP5676021B2 (ja) | 2014-01-06 | 2015-02-25 | 富士フイルム株式会社 | 感活性光線性または感放射線性樹脂組成物及びそれを用いたパターン形成方法 |
| US9644056B2 (en) | 2015-02-18 | 2017-05-09 | Sumitomo Chemical Company, Limited | Compound, resin and photoresist composition |
| JP6518475B2 (ja) | 2015-03-20 | 2019-05-22 | 東京応化工業株式会社 | レジスト組成物、レジストパターン形成方法、酸発生剤及び化合物 |
| JP6442370B2 (ja) * | 2015-06-26 | 2018-12-19 | サンアプロ株式会社 | スルホニウム塩および光酸発生剤 |
| IL270030B2 (en) | 2017-04-21 | 2023-12-01 | Fujifilm Corp | A photosensitive composition for EUV light, a method for patterning and a method for producing an electronic device |
| US11820735B2 (en) | 2018-04-12 | 2023-11-21 | Sumitomo Chemical Company, Limited | Salt, acid generator, resist composition and method for producing resist pattern |
| US11378883B2 (en) | 2018-04-12 | 2022-07-05 | Sumitomo Chemical Company, Limited | Salt, acid generator, resist composition and method for producing resist pattern |
| KR102537251B1 (ko) | 2018-06-28 | 2023-05-26 | 후지필름 가부시키가이샤 | 감활성광선성 또는 감방사선성 수지 조성물, 패턴 형성 방법, 전자 디바이스의 제조 방법, 수지 |
| JP7076570B2 (ja) | 2018-09-25 | 2022-05-27 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、電子デバイスの製造方法 |
| EP3865473A4 (en) * | 2018-10-09 | 2022-11-23 | Changzhou Tronly Advanced Electronic Materials Co., Ltd. | TRIPHENYLPHOSPHONIUM SALT COMPOUND AND ITS USES |
| JP7186592B2 (ja) | 2018-12-04 | 2022-12-09 | 東京応化工業株式会社 | レジスト組成物、レジストパターン形成方法、及び化合物 |
| JP7218162B2 (ja) | 2018-12-04 | 2023-02-06 | 東京応化工業株式会社 | レジスト組成物、レジストパターン形成方法、及び化合物 |
| WO2020158337A1 (ja) | 2019-01-28 | 2020-08-06 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、電子デバイスの製造方法 |
| JP7507000B2 (ja) | 2019-04-25 | 2024-06-27 | 住友化学株式会社 | カルボン酸塩、カルボン酸発生剤、レジスト組成物及びレジストパターンの製造方法 |
| JP7579066B2 (ja) | 2019-04-25 | 2024-11-07 | 住友化学株式会社 | 塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法 |
| JP7560956B2 (ja) | 2019-04-25 | 2024-10-03 | 住友化学株式会社 | レジスト組成物及びレジストパターンの製造方法 |
| JP7489818B2 (ja) | 2019-04-25 | 2024-05-24 | 住友化学株式会社 | カルボン酸塩、カルボン酸発生剤、レジスト組成物及びレジストパターンの製造方法 |
| JP2021071720A (ja) | 2019-10-28 | 2021-05-06 | Jsr株式会社 | 感放射線性樹脂組成物及びレジストパターン形成方法 |
| JP7800800B2 (ja) * | 2020-09-28 | 2026-01-16 | Jsr株式会社 | 感放射線性樹脂組成物及びパターン形成方法 |
| KR102863079B1 (ko) * | 2020-11-27 | 2025-09-19 | 삼성전자주식회사 | 광산발생제, 이를 포함하는 포토레지스트 조성물, 및 상기 광산발생제의 제조방법 |
-
2022
- 2022-11-30 CN CN202280081178.6A patent/CN118451368A/zh active Pending
- 2022-11-30 WO PCT/JP2022/044081 patent/WO2023106171A1/ja not_active Ceased
- 2022-11-30 JP JP2023566258A patent/JPWO2023106171A1/ja active Pending
- 2022-11-30 KR KR1020247019037A patent/KR102937068B1/ko active Active
- 2022-11-30 EP EP22904102.5A patent/EP4446811A4/en active Pending
- 2022-12-07 TW TW111146849A patent/TW202328064A/zh unknown
-
2024
- 2024-06-07 US US18/737,794 patent/US20240329524A1/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2021095356A1 (ja) * | 2019-11-12 | 2021-05-20 | 東洋合成工業株式会社 | スルホニウム塩、酸発生剤、レジスト組成物、及びデバイスの製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| EP4446811A4 (en) | 2025-04-30 |
| WO2023106171A1 (ja) | 2023-06-15 |
| TW202328064A (zh) | 2023-07-16 |
| US20240329524A1 (en) | 2024-10-03 |
| EP4446811A1 (en) | 2024-10-16 |
| KR20240096807A (ko) | 2024-06-26 |
| CN118451368A (zh) | 2024-08-06 |
| JPWO2023106171A1 (https=) | 2023-06-15 |
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