KR102878174B1 - 플라즈마 프로세싱 시스템을 위한 rf 신호 필터 배열 - Google Patents

플라즈마 프로세싱 시스템을 위한 rf 신호 필터 배열

Info

Publication number
KR102878174B1
KR102878174B1 KR1020227030614A KR20227030614A KR102878174B1 KR 102878174 B1 KR102878174 B1 KR 102878174B1 KR 1020227030614 A KR1020227030614 A KR 1020227030614A KR 20227030614 A KR20227030614 A KR 20227030614A KR 102878174 B1 KR102878174 B1 KR 102878174B1
Authority
KR
South Korea
Prior art keywords
signal
ring
signal supply
plasma processing
tes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020227030614A
Other languages
English (en)
Korean (ko)
Other versions
KR20220134688A (ko
Inventor
알렉세이 마라크타노브
펠릭스 코자케비치
빙 지
라나딥 보우믹
존 홀랜드
Original Assignee
램 리써치 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 램 리써치 코포레이션 filed Critical 램 리써치 코포레이션
Priority to KR1020257035673A priority Critical patent/KR102994284B1/ko
Publication of KR20220134688A publication Critical patent/KR20220134688A/ko
Application granted granted Critical
Publication of KR102878174B1 publication Critical patent/KR102878174B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32541—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32577—Electrical connecting means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3341—Reactive etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
KR1020227030614A 2020-02-04 2021-01-30 플라즈마 프로세싱 시스템을 위한 rf 신호 필터 배열 Active KR102878174B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020257035673A KR102994284B1 (ko) 2020-02-04 2021-01-30 플라즈마 프로세싱 시스템을 위한 rf 신호 필터 배열

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202062970168P 2020-02-04 2020-02-04
US62/970,168 2020-02-04
PCT/US2021/015956 WO2021158451A1 (en) 2020-02-04 2021-01-30 Radiofrequency signal filter arrangement for plasma processing system

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020257035673A Division KR102994284B1 (ko) 2020-02-04 2021-01-30 플라즈마 프로세싱 시스템을 위한 rf 신호 필터 배열

Publications (2)

Publication Number Publication Date
KR20220134688A KR20220134688A (ko) 2022-10-05
KR102878174B1 true KR102878174B1 (ko) 2025-10-28

Family

ID=77200545

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020227030614A Active KR102878174B1 (ko) 2020-02-04 2021-01-30 플라즈마 프로세싱 시스템을 위한 rf 신호 필터 배열
KR1020257035673A Active KR102994284B1 (ko) 2020-02-04 2021-01-30 플라즈마 프로세싱 시스템을 위한 rf 신호 필터 배열

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020257035673A Active KR102994284B1 (ko) 2020-02-04 2021-01-30 플라즈마 프로세싱 시스템을 위한 rf 신호 필터 배열

Country Status (5)

Country Link
US (2) US12476082B2 (enExample)
JP (2) JP7641972B2 (enExample)
KR (2) KR102878174B1 (enExample)
CN (1) CN115136278A (enExample)
WO (1) WO2021158451A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102878174B1 (ko) * 2020-02-04 2025-10-28 램 리써치 코포레이션 플라즈마 프로세싱 시스템을 위한 rf 신호 필터 배열
KR102824580B1 (ko) * 2020-12-01 2025-06-23 삼성전자주식회사 플라즈마 공정 장치 및 이를 이용한 반도체 장치의 제조 방법
KR102770730B1 (ko) * 2021-12-30 2025-02-24 세메스 주식회사 기판 처리 장치 및 기판 처리 방법

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011135052A (ja) 2009-11-24 2011-07-07 Tokyo Electron Ltd プラズマ処理装置
JP2014082449A (ja) 2012-09-26 2014-05-08 Toshiba Corp プラズマ処理装置およびプラズマ処理方法
JP2017228526A (ja) * 2016-06-22 2017-12-28 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ 結合リング内に電極を使用することによってエッジ領域におけるイオンの方向性を制御するためのシステム及び方法

Family Cites Families (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7196283B2 (en) * 2000-03-17 2007-03-27 Applied Materials, Inc. Plasma reactor overhead source power electrode with low arcing tendency, cylindrical gas outlets and shaped surface
US20040027781A1 (en) 2002-08-12 2004-02-12 Hiroji Hanawa Low loss RF bias electrode for a plasma reactor with enhanced wafer edge RF coupling and highly efficient wafer cooling
US7059268B2 (en) * 2002-12-20 2006-06-13 Tokyo Electron Limited Method, apparatus and magnet assembly for enhancing and localizing a capacitively coupled plasma
US20050221020A1 (en) * 2004-03-30 2005-10-06 Tokyo Electron Limited Method of improving the wafer to wafer uniformity and defectivity of a deposited dielectric film
KR20060098292A (ko) * 2005-03-11 2006-09-18 주식회사 에이디피엔지니어링 Ｒｆ 전력 공급장치
US8083890B2 (en) * 2005-09-27 2011-12-27 Lam Research Corporation Gas modulation to control edge exclusion in a bevel edge etching plasma chamber
JP5031252B2 (ja) 2006-03-30 2012-09-19 東京エレクトロン株式会社 プラズマ処理装置
US7611603B2 (en) 2006-03-31 2009-11-03 Tokyo Electron Limited Plasma processing apparatus having impedance varying electrodes
US7732728B2 (en) * 2007-01-17 2010-06-08 Lam Research Corporation Apparatuses for adjusting electrode gap in capacitively-coupled RF plasma reactor
US7758764B2 (en) * 2007-06-28 2010-07-20 Lam Research Corporation Methods and apparatus for substrate processing
US8563619B2 (en) * 2007-06-28 2013-10-22 Lam Research Corporation Methods and arrangements for plasma processing system with tunable capacitance
US9017533B2 (en) 2008-07-15 2015-04-28 Applied Materials, Inc. Apparatus for controlling radial distribution of plasma ion density and ion energy at a workpiece surface by multi-frequency RF impedance tuning
US8070925B2 (en) * 2008-10-17 2011-12-06 Applied Materials, Inc. Physical vapor deposition reactor with circularly symmetric RF feed and DC feed to the sputter target
US20110005679A1 (en) 2009-07-13 2011-01-13 Applied Materials, Inc. Plasma uniformity control through vhf cathode ground return with feedback stabilization of vhf cathode impedance
KR101151414B1 (ko) 2010-02-23 2012-06-04 주식회사 플라즈마트 임피던스 정합 장치
US9966236B2 (en) * 2011-06-15 2018-05-08 Lam Research Corporation Powered grid for plasma chamber
US9177762B2 (en) * 2011-11-16 2015-11-03 Lam Research Corporation System, method and apparatus of a wedge-shaped parallel plate plasma reactor for substrate processing
US9508530B2 (en) 2011-11-21 2016-11-29 Lam Research Corporation Plasma processing chamber with flexible symmetric RF return strap
US9842725B2 (en) * 2013-01-31 2017-12-12 Lam Research Corporation Using modeling to determine ion energy associated with a plasma system
JP2015536043A (ja) * 2012-09-26 2015-12-17 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 基板処理システムにおける温度制御
JP6276919B2 (ja) 2013-02-01 2018-02-07 株式会社日立ハイテクノロジーズ プラズマ処理装置および試料台
CN105190843A (zh) * 2013-03-15 2015-12-23 应用材料公司 在处理室中使用调节环来调节等离子体分布的装置和方法
US10125422B2 (en) * 2013-03-27 2018-11-13 Applied Materials, Inc. High impedance RF filter for heater with impedance tuning device
US20150001180A1 (en) * 2013-06-28 2015-01-01 Applied Materials, Inc. Process kit for edge critical dimension uniformity control
US10937634B2 (en) * 2013-10-04 2021-03-02 Lam Research Corporation Tunable upper plasma-exclusion-zone ring for a bevel etcher
US9851389B2 (en) * 2014-10-21 2017-12-26 Lam Research Corporation Identifying components associated with a fault in a plasma system
US10049862B2 (en) * 2015-04-17 2018-08-14 Lam Research Corporation Chamber with vertical support stem for symmetric conductance and RF delivery
US10017857B2 (en) * 2015-05-02 2018-07-10 Applied Materials, Inc. Method and apparatus for controlling plasma near the edge of a substrate
US10153139B2 (en) * 2015-06-17 2018-12-11 Applied Materials, Inc. Multiple electrode substrate support assembly and phase control system
US10153136B2 (en) * 2015-08-04 2018-12-11 Lam Research Corporation Hollow RF feed with coaxial DC power feed
FR3058602B1 (fr) 2016-11-08 2021-02-12 Centre Nat Rech Scient Circuit d'adaptation d'impedance entre un generateur et une charge a des frequences multiples, ensemble comportant un tel circuit et utlisation liee.
TWI765936B (zh) * 2016-11-29 2022-06-01 美商東京威力科創Ｆｓｉ股份有限公司 用以對處理腔室中之微電子基板進行處理的平移與旋轉夾頭
US9947517B1 (en) * 2016-12-16 2018-04-17 Applied Materials, Inc. Adjustable extended electrode for edge uniformity control
US10553404B2 (en) * 2017-02-01 2020-02-04 Applied Materials, Inc. Adjustable extended electrode for edge uniformity control
US11244808B2 (en) * 2017-05-26 2022-02-08 Applied Materials, Inc. Monopole antenna array source for semiconductor process equipment
US10763081B2 (en) * 2017-07-10 2020-09-01 Applied Materials, Inc. Apparatus and methods for manipulating radio frequency power at an edge ring in plasma process device
WO2019014002A1 (en) 2017-07-13 2019-01-17 Applied Materials, Inc. METHOD AND APPARATUS FOR TREATING SUBSTRATE
JP6865128B2 (ja) * 2017-07-19 2021-04-28 東京エレクトロン株式会社 プラズマ処理装置
JP7026498B2 (ja) 2017-12-12 2022-02-28 東京エレクトロン株式会社 アンテナ及びプラズマ成膜装置
CN109994355B (zh) * 2017-12-29 2021-11-02 中微半导体设备(上海)股份有限公司 一种具有低频射频功率分布调节功能的等离子反应器
US10938430B2 (en) * 2018-04-05 2021-03-02 The Charles Stark Draper Laboratory, Inc. Distributed antenna with closed-loop impedance matching for high speed vehicles
US20190341275A1 (en) * 2018-05-07 2019-11-07 Lam Research Corporation Edge ring focused deposition during a cleaning process of a processing chamber
US10600623B2 (en) * 2018-05-28 2020-03-24 Applied Materials, Inc. Process kit with adjustable tuning ring for edge uniformity control
US11094511B2 (en) * 2018-11-13 2021-08-17 Applied Materials, Inc. Processing chamber with substrate edge enhancement processing
US11289310B2 (en) * 2018-11-21 2022-03-29 Applied Materials, Inc. Circuits for edge ring control in shaped DC pulsed plasma process device
US11512393B2 (en) * 2018-11-29 2022-11-29 Lam Research Corporation Dynamic sheath control with edge ring lift
US11456159B2 (en) * 2019-10-25 2022-09-27 Xia Tai Xin Semiconductor (Qing Dao) Ltd. Plasma processing system
KR102878174B1 (ko) * 2020-02-04 2025-10-28 램 리써치 코포레이션 플라즈마 프로세싱 시스템을 위한 rf 신호 필터 배열

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011135052A (ja) 2009-11-24 2011-07-07 Tokyo Electron Ltd プラズマ処理装置
JP2014082449A (ja) 2012-09-26 2014-05-08 Toshiba Corp プラズマ処理装置およびプラズマ処理方法
JP2017228526A (ja) * 2016-06-22 2017-12-28 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ 結合リング内に電極を使用することによってエッジ領域におけるイオンの方向性を制御するためのシステム及び方法

Also Published As

Publication number Publication date
US20260045452A1 (en) 2026-02-12
JP7641972B2 (ja) 2025-03-07
CN115136278A (zh) 2022-09-30
US20230054699A1 (en) 2023-02-23
KR20250161032A (ko) 2025-11-14
US12476082B2 (en) 2025-11-18
WO2021158451A1 (en) 2021-08-12
KR102994284B1 (ko) 2026-07-27
JP2025084822A (ja) 2025-06-03
JP2023514548A (ja) 2023-04-06
KR20220134688A (ko) 2022-10-05

Similar Documents

Publication Publication Date Title
US12183544B2 (en) Tuning voltage setpoint in a pulsed RF signal for a tunable edge sheath system
KR102890568B1 (ko) 복수의 생성기들 및 위상 제어를 사용하는 이온 에너지 전달을 위한 프로세스 제어
KR102959395B1 (ko) 플라즈마 프로세싱 시스템에서 rf 신호 접지 리턴의 최적화
US20260045452A1 (en) Radiofrequency Signal Filter Arrangement for Plasma Processing System
US20260135065A1 (en) Minimizing reflected power in a tunable edge sheath system
KR102553248B1 (ko) 대칭적인 컨덕턴스 및 rf 전달을 위해 수직 지지 스템을 가진 챔버
US20230298866A1 (en) Plasma uniformity control using a static magnetic field
WO2025165553A1 (en) Multi-coil system for etching uniformity control

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

D22 Grant of ip right intended

Free format text: ST27 STATUS EVENT CODE: A-1-2-D10-D22-EXM-PE0701 (AS PROVIDED BY THE NATIONAL OFFICE)

PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

A16 Divisional, continuation or continuation in part application filed

Free format text: ST27 STATUS EVENT CODE: A-0-1-A10-A16-DIV-PA0104 (AS PROVIDED BY THE NATIONAL OFFICE)

F11 Ip right granted following substantive examination

Free format text: ST27 STATUS EVENT CODE: A-2-4-F10-F11-EXM-PR0701 (AS PROVIDED BY THE NATIONAL OFFICE)

PA0104 Divisional application for international application

St.27 status event code: A-0-1-A10-A16-div-PA0104

PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

U12 Designation fee paid

Free format text: ST27 STATUS EVENT CODE: A-2-2-U10-U12-OTH-PR1002 (AS PROVIDED BY THE NATIONAL OFFICE)

Year of fee payment: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

Q13 Ip right document published

Free format text: ST27 STATUS EVENT CODE: A-4-4-Q10-Q13-NAP-PG1601 (AS PROVIDED BY THE NATIONAL OFFICE)