KR102826740B1 - GaN 기판 웨이퍼 및 그 제조 방법 - Google Patents

GaN 기판 웨이퍼 및 그 제조 방법 Download PDF

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KR102826740B1
KR102826740B1 KR1020217039706A KR20217039706A KR102826740B1 KR 102826740 B1 KR102826740 B1 KR 102826740B1 KR 1020217039706 A KR1020217039706 A KR 1020217039706A KR 20217039706 A KR20217039706 A KR 20217039706A KR 102826740 B1 KR102826740 B1 KR 102826740B1
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KR20220012864A (ko
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겐지 이소
유우키 에나츠
겐지 시모야마
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미쯔비시 케미컬 주식회사
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    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
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    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
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    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
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    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
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    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C30B7/10—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by application of pressure, e.g. hydrothermal processes
    • C30B7/105—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by application of pressure, e.g. hydrothermal processes using ammonia as solvent, i.e. ammonothermal processes
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    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
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    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
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  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Engineering & Computer Science (AREA)
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  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
KR1020217039706A 2019-05-30 2020-05-28 GaN 기판 웨이퍼 및 그 제조 방법 Active KR102826740B1 (ko)

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JP2019101183 2019-05-30
JPJP-P-2019-101183 2019-05-30
JP2019113569 2019-06-19
JPJP-P-2019-113569 2019-06-19
PCT/JP2020/021132 WO2020241760A1 (ja) 2019-05-30 2020-05-28 ＧａＮ基板ウエハおよびその製造方法

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US (1) US12288686B2 (https=)
EP (1) EP3978656A4 (https=)
JP (1) JP7632281B2 (https=)
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JP7719002B2 (ja) * 2022-01-28 2025-08-05 住友化学株式会社 半導体積層物、および半導体積層物の製造方法
JP2025019751A (ja) * 2023-07-28 2025-02-07 国立大学法人東海国立大学機構 窒化ガリウムの製造方法、窒化ガリウムの気相成長装置および窒化ガリウム基板

Citations (3)

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JP2009269816A (ja) * 2006-03-13 2009-11-19 Tohoku Univ 窒化ガリウム系材料及びその製造方法
JP2016533028A (ja) * 2013-07-11 2016-10-20 シックスポイント マテリアルズ， インコーポレイテッド Ｉｉｉ族窒化物半導体を用いた電子デバイスおよびその製造方法、および該電子デバイスを製作するためのエピタキシャル多層ウエハ
JP2017019709A (ja) * 2014-12-16 2017-01-26 三菱化学株式会社 ＧａＮ基板

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JP4720441B2 (ja) * 2005-11-02 2011-07-13 日立電線株式会社 青色発光ダイオード用ＧａＮ基板
JP4187175B2 (ja) 2006-03-13 2008-11-26 国立大学法人東北大学 窒化ガリウム系材料の製造方法
US9466481B2 (en) * 2006-04-07 2016-10-11 Sixpoint Materials, Inc. Electronic device and epitaxial multilayer wafer of group III nitride semiconductor having specified dislocation density, oxygen/electron concentration, and active layer thickness
JP2014062023A (ja) * 2011-10-28 2014-04-10 Mitsubishi Chemicals Corp 窒化物結晶の製造方法
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DE112015006059T5 (de) * 2015-01-27 2017-10-12 Mitsubishi Electric Corporation Halbleitervorrichtung
JP6578570B2 (ja) 2015-03-03 2019-09-25 国立大学法人大阪大学 Ｉｉｉ族窒化物半導体結晶基板の製造方法
WO2018030312A1 (ja) 2016-08-08 2018-02-15 三菱ケミカル株式会社 ＧａＮ結晶成長方法およびＣ面ＧａＮ基板
JP6776711B2 (ja) * 2016-08-08 2020-10-28 三菱ケミカル株式会社 ＧａＮ単結晶およびＧａＮ単結晶製造方法
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JP6428900B1 (ja) * 2017-11-29 2018-11-28 富士電機株式会社 ダイオード素子およびダイオード素子の製造方法
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JP2016533028A (ja) * 2013-07-11 2016-10-20 シックスポイント マテリアルズ， インコーポレイテッド Ｉｉｉ族窒化物半導体を用いた電子デバイスおよびその製造方法、および該電子デバイスを製作するためのエピタキシャル多層ウエハ
JP2017019709A (ja) * 2014-12-16 2017-01-26 三菱化学株式会社 ＧａＮ基板

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CN113906169A (zh) 2022-01-07
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EP3978656A1 (en) 2022-04-06
US12288686B2 (en) 2025-04-29
JP7632281B2 (ja) 2025-02-19
EP3978656A4 (en) 2022-08-10
KR20220012864A (ko) 2022-02-04
US20220084819A1 (en) 2022-03-17
WO2020241760A1 (ja) 2020-12-03

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