KR102825584B1 - 플라즈마 처리 장치 및 플라즈마 처리 방법 - Google Patents

플라즈마 처리 장치 및 플라즈마 처리 방법 Download PDF

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KR102825584B1
KR102825584B1 KR1020200128721A KR20200128721A KR102825584B1 KR 102825584 B1 KR102825584 B1 KR 102825584B1 KR 1020200128721 A KR1020200128721 A KR 1020200128721A KR 20200128721 A KR20200128721 A KR 20200128721A KR 102825584 B1 KR102825584 B1 KR 102825584B1
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electrode
potential
period
plasma processing
plasma
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Korean (ko)
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KR20210045927A (ko
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준이치 사사키
야스하루 사사키
히데토시 하나오카
도모히코 아키야마
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도쿄엘렉트론가부시키가이샤
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32541—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31144—Etching the insulating layers by chemical or physical means using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3341—Reactive etching

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
KR1020200128721A 2019-10-17 2020-10-06 플라즈마 처리 장치 및 플라즈마 처리 방법 Active KR102825584B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2019-190052 2019-10-17
JP2019190052A JP7325294B2 (ja) 2019-10-17 2019-10-17 プラズマ処理装置及びプラズマ処理方法

Publications (2)

Publication Number Publication Date
KR20210045927A KR20210045927A (ko) 2021-04-27
KR102825584B1 true KR102825584B1 (ko) 2025-06-26

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KR1020200128721A Active KR102825584B1 (ko) 2019-10-17 2020-10-06 플라즈마 처리 장치 및 플라즈마 처리 방법

Country Status (4)

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US (2) US11417500B2 (enExample)
JP (1) JP7325294B2 (enExample)
KR (1) KR102825584B1 (enExample)
CN (1) CN112687511B (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7378276B2 (ja) * 2019-11-12 2023-11-13 東京エレクトロン株式会社 プラズマ処理装置
JP7638930B2 (ja) * 2021-05-31 2025-03-04 東京エレクトロン株式会社 プラズマ処理装置
TW202329192A (zh) * 2021-08-27 2023-07-16 日商東京威力科創股份有限公司 基板支持器及電漿處理裝置
US20230060192A1 (en) * 2021-09-02 2023-03-02 Entegris, Inc. Methods and apparatus for processing an electrostatic chuck

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022086724A1 (en) * 2020-10-21 2022-04-28 Applied Materials, Inc. High temperature bipolar electrostatic chuck

Family Cites Families (16)

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Publication number Priority date Publication date Assignee Title
JP3426972B2 (ja) * 1998-07-07 2003-07-14 三菱重工業株式会社 Ｓｉ系生成物製造装置内部の洗浄方法及び装置
CN100501939C (zh) * 2004-10-05 2009-06-17 东京毅力科创株式会社 等离子体成膜方法和等离子体成膜装置
JP5116983B2 (ja) * 2006-03-30 2013-01-09 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
JP5315942B2 (ja) * 2008-05-21 2013-10-16 東京エレクトロン株式会社 載置台機構、これを用いたプラズマ処理装置及び静電チャックへの電圧印加方法
US9018109B2 (en) * 2009-03-10 2015-04-28 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor including silicon nitride layer and manufacturing method thereof
JP5960384B2 (ja) * 2009-10-26 2016-08-02 新光電気工業株式会社 静電チャック用基板及び静電チャック
JP5938716B2 (ja) * 2013-11-01 2016-06-22 パナソニックＩｐマネジメント株式会社 プラズマ処理装置及びプラズマ処理方法
JP6462283B2 (ja) * 2014-09-11 2019-01-30 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP6346855B2 (ja) * 2014-12-25 2018-06-20 東京エレクトロン株式会社 静電吸着方法及び基板処理装置
US10163610B2 (en) * 2015-07-13 2018-12-25 Lam Research Corporation Extreme edge sheath and wafer profile tuning through edge-localized ion trajectory control and plasma operation
JP6807558B2 (ja) * 2016-11-08 2021-01-06 パナソニックＩｐマネジメント株式会社 プラズマ処理方法およびプラズマ処理装置
JP6924618B2 (ja) * 2017-05-30 2021-08-25 東京エレクトロン株式会社 静電チャック及びプラズマ処理装置
JP6861579B2 (ja) * 2017-06-02 2021-04-21 東京エレクトロン株式会社 プラズマ処理装置、静電吸着方法および静電吸着プログラム
JP6826955B2 (ja) * 2017-06-14 2021-02-10 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
CN116581082A (zh) * 2017-09-29 2023-08-11 住友大阪水泥股份有限公司 静电卡盘装置
JP7204350B2 (ja) * 2018-06-12 2023-01-16 東京エレクトロン株式会社 載置台、基板処理装置及びエッジリング

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022086724A1 (en) * 2020-10-21 2022-04-28 Applied Materials, Inc. High temperature bipolar electrostatic chuck

Also Published As

Publication number Publication date
KR20210045927A (ko) 2021-04-27
US11923171B2 (en) 2024-03-05
JP2021064750A (ja) 2021-04-22
US20220336193A1 (en) 2022-10-20
CN112687511A (zh) 2021-04-20
US11417500B2 (en) 2022-08-16
JP7325294B2 (ja) 2023-08-14
CN112687511B (zh) 2025-09-12
US20210118647A1 (en) 2021-04-22

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