KR102810325B1 - 플라즈마 처리 장치 및 플라즈마 처리 방법 - Google Patents

플라즈마 처리 장치 및 플라즈마 처리 방법 Download PDF

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Publication number
KR102810325B1
KR102810325B1 KR1020200004218A KR20200004218A KR102810325B1 KR 102810325 B1 KR102810325 B1 KR 102810325B1 KR 1020200004218 A KR1020200004218 A KR 1020200004218A KR 20200004218 A KR20200004218 A KR 20200004218A KR 102810325 B1 KR102810325 B1 KR 102810325B1
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KR
South Korea
Prior art keywords
power supply
plasma processing
chamber
voltage
upper electrode
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KR1020200004218A
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English (en)
Korean (ko)
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KR20200091811A (ko
Inventor
유스케 아오키
신야 모리키타
도시카츠 도바나
후미야 다카타
Original Assignee
도쿄엘렉트론가부시키가이샤
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020200004218A 2019-01-23 2020-01-13 플라즈마 처리 장치 및 플라즈마 처리 방법 Active KR102810325B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019009476A JP6960421B2 (ja) 2019-01-23 2019-01-23 プラズマ処理装置及びプラズマ処理方法
JPJP-P-2019-009476 2019-01-23

Publications (2)

Publication Number Publication Date
KR20200091811A KR20200091811A (ko) 2020-07-31
KR102810325B1 true KR102810325B1 (ko) 2025-05-20

Family

ID=71608401

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020200004218A Active KR102810325B1 (ko) 2019-01-23 2020-01-13 플라즈마 처리 장치 및 플라즈마 처리 방법

Country Status (5)

Country Link
US (1) US11062882B2 (enExample)
JP (1) JP6960421B2 (enExample)
KR (1) KR102810325B1 (enExample)
CN (1) CN111477531A (enExample)
TW (1) TWI849037B (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20230036847A (ko) * 2021-09-08 2023-03-15 삼성전자주식회사 고전압 전원 장치 및 이를 포함하는 플라즈마 식각 장비

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010219491A (ja) 2009-02-20 2010-09-30 Tokyo Electron Ltd プラズマエッチング方法、プラズマエッチング装置および記憶媒体

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005124844A1 (ja) * 2004-06-21 2005-12-29 Tokyo Electron Limited プラズマ処理装置及び方法
JP4672456B2 (ja) 2004-06-21 2011-04-20 東京エレクトロン株式会社 プラズマ処理装置
JP2010238881A (ja) * 2009-03-31 2010-10-21 Tokyo Electron Ltd プラズマ処理装置及びプラズマ処理方法
US9287086B2 (en) * 2010-04-26 2016-03-15 Advanced Energy Industries, Inc. System, method and apparatus for controlling ion energy distribution
KR20120022251A (ko) * 2010-09-01 2012-03-12 삼성전자주식회사 플라즈마 식각방법 및 그의 장치
JP5977509B2 (ja) * 2011-12-09 2016-08-24 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
US9922802B2 (en) * 2012-02-20 2018-03-20 Tokyo Electron Limited Power supply system, plasma etching apparatus, and plasma etching method
JP6512962B2 (ja) * 2014-09-17 2019-05-15 東京エレクトロン株式会社 プラズマ処理装置
JP6424120B2 (ja) * 2015-03-23 2018-11-14 東京エレクトロン株式会社 電源システム、プラズマ処理装置及び電源制御方法
JP6392266B2 (ja) * 2016-03-22 2018-09-19 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
US10566177B2 (en) * 2016-08-15 2020-02-18 Applied Materials, Inc. Pulse shape controller for sputter sources
CN110088350B (zh) * 2016-12-08 2022-04-29 东京毅力科创株式会社 等离子体喷涂装置和电池用电极的制造方法
CN111434039B (zh) * 2017-12-07 2024-07-30 朗姆研究公司 用于半导体rf等离子体处理的脉冲内的rf脉冲
US10555412B2 (en) * 2018-05-10 2020-02-04 Applied Materials, Inc. Method of controlling ion energy distribution using a pulse generator with a current-return output stage

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010219491A (ja) 2009-02-20 2010-09-30 Tokyo Electron Ltd プラズマエッチング方法、プラズマエッチング装置および記憶媒体

Also Published As

Publication number Publication date
US11062882B2 (en) 2021-07-13
JP6960421B2 (ja) 2021-11-05
US20200234925A1 (en) 2020-07-23
JP2020119982A (ja) 2020-08-06
TWI849037B (zh) 2024-07-21
CN111477531A (zh) 2020-07-31
KR20200091811A (ko) 2020-07-31
TW202033059A (zh) 2020-09-01

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