TWI849037B - 電漿處理裝置及電漿處理方法 - Google Patents

電漿處理裝置及電漿處理方法 Download PDF

Info

Publication number
TWI849037B
TWI849037B TW109101319A TW109101319A TWI849037B TW I849037 B TWI849037 B TW I849037B TW 109101319 A TW109101319 A TW 109101319A TW 109101319 A TW109101319 A TW 109101319A TW I849037 B TWI849037 B TW I849037B
Authority
TW
Taiwan
Prior art keywords
plasma processing
power supply
chamber
plasma
voltage
Prior art date
Application number
TW109101319A
Other languages
English (en)
Chinese (zh)
Other versions
TW202033059A (zh
Inventor
青木裕介
森北信也
戸花敏勝
高田郁弥
Original Assignee
日商東京威力科創股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商東京威力科創股份有限公司 filed Critical 日商東京威力科創股份有限公司
Publication of TW202033059A publication Critical patent/TW202033059A/zh
Application granted granted Critical
Publication of TWI849037B publication Critical patent/TWI849037B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
TW109101319A 2019-01-23 2020-01-15 電漿處理裝置及電漿處理方法 TWI849037B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019009476A JP6960421B2 (ja) 2019-01-23 2019-01-23 プラズマ処理装置及びプラズマ処理方法
JP2019-009476 2019-01-23

Publications (2)

Publication Number Publication Date
TW202033059A TW202033059A (zh) 2020-09-01
TWI849037B true TWI849037B (zh) 2024-07-21

Family

ID=71608401

Family Applications (1)

Application Number Title Priority Date Filing Date
TW109101319A TWI849037B (zh) 2019-01-23 2020-01-15 電漿處理裝置及電漿處理方法

Country Status (5)

Country Link
US (1) US11062882B2 (enExample)
JP (1) JP6960421B2 (enExample)
KR (1) KR102810325B1 (enExample)
CN (1) CN111477531A (enExample)
TW (1) TWI849037B (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20230036847A (ko) * 2021-09-08 2023-03-15 삼성전자주식회사 고전압 전원 장치 및 이를 포함하는 플라즈마 식각 장비

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140305905A1 (en) * 2011-12-09 2014-10-16 Tokyo Electron Limited Plasma processing method and plasma processing apparatus
TW201831053A (zh) * 2016-12-08 2018-08-16 日商東京威力科創股份有限公司 電漿熔射裝置及電池用電極之製造方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005124844A1 (ja) * 2004-06-21 2005-12-29 Tokyo Electron Limited プラズマ処理装置及び方法
JP4672456B2 (ja) 2004-06-21 2011-04-20 東京エレクトロン株式会社 プラズマ処理装置
JP5466480B2 (ja) * 2009-02-20 2014-04-09 東京エレクトロン株式会社 プラズマエッチング方法、プラズマエッチング装置および記憶媒体
JP2010238881A (ja) * 2009-03-31 2010-10-21 Tokyo Electron Ltd プラズマ処理装置及びプラズマ処理方法
US9287086B2 (en) * 2010-04-26 2016-03-15 Advanced Energy Industries, Inc. System, method and apparatus for controlling ion energy distribution
KR20120022251A (ko) * 2010-09-01 2012-03-12 삼성전자주식회사 플라즈마 식각방법 및 그의 장치
US9922802B2 (en) * 2012-02-20 2018-03-20 Tokyo Electron Limited Power supply system, plasma etching apparatus, and plasma etching method
JP6512962B2 (ja) * 2014-09-17 2019-05-15 東京エレクトロン株式会社 プラズマ処理装置
JP6424120B2 (ja) * 2015-03-23 2018-11-14 東京エレクトロン株式会社 電源システム、プラズマ処理装置及び電源制御方法
JP6392266B2 (ja) * 2016-03-22 2018-09-19 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
US10566177B2 (en) * 2016-08-15 2020-02-18 Applied Materials, Inc. Pulse shape controller for sputter sources
CN111434039B (zh) * 2017-12-07 2024-07-30 朗姆研究公司 用于半导体rf等离子体处理的脉冲内的rf脉冲
US10555412B2 (en) * 2018-05-10 2020-02-04 Applied Materials, Inc. Method of controlling ion energy distribution using a pulse generator with a current-return output stage

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140305905A1 (en) * 2011-12-09 2014-10-16 Tokyo Electron Limited Plasma processing method and plasma processing apparatus
TW201831053A (zh) * 2016-12-08 2018-08-16 日商東京威力科創股份有限公司 電漿熔射裝置及電池用電極之製造方法

Also Published As

Publication number Publication date
US11062882B2 (en) 2021-07-13
JP6960421B2 (ja) 2021-11-05
KR102810325B1 (ko) 2025-05-20
US20200234925A1 (en) 2020-07-23
JP2020119982A (ja) 2020-08-06
CN111477531A (zh) 2020-07-31
KR20200091811A (ko) 2020-07-31
TW202033059A (zh) 2020-09-01

Similar Documents

Publication Publication Date Title
CN113327834B (zh) 等离子体处理装置及等离子体处理方法
US11264208B2 (en) Plasma processing apparatus and method for controlling radio-frequency power supply of plasma processing apparatus
TWI865541B (zh) 電漿處理方法及電漿處理裝置
TWI874493B (zh) 電漿處理方法及電漿處理裝置
TWI878241B (zh) 清潔方法及電漿處理裝置
US20250191877A1 (en) Plasma processing apparatus and plasma processing method
CN112687511B (zh) 等离子体处理装置及等离子体处理方法
JP2019129123A (ja) 直流電圧を印加する方法及びプラズマ処理装置
TWI890729B (zh) 電漿處理裝置及電漿處理方法
JP2021141050A (ja) プラズマ処理装置及びプラズマ処理方法
TWI887249B (zh) 電漿處理裝置
TWI849037B (zh) 電漿處理裝置及電漿處理方法
TWI895458B (zh) 電漿處理裝置及電漿處理方法
CN111564355B (zh) 等离子体处理装置和等离子体处理方法
TWI900477B (zh) 電漿處理裝置及電漿處理方法
TW202539303A (zh) 電漿處理方法及電漿處理裝置