KR102802345B1 - 계측을 위한 퓨필 평면 빔 스캐닝 - Google Patents

계측을 위한 퓨필 평면 빔 스캐닝 Download PDF

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Publication number
KR102802345B1
KR102802345B1 KR1020237021665A KR20237021665A KR102802345B1 KR 102802345 B1 KR102802345 B1 KR 102802345B1 KR 1020237021665 A KR1020237021665 A KR 1020237021665A KR 20237021665 A KR20237021665 A KR 20237021665A KR 102802345 B1 KR102802345 B1 KR 102802345B1
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South Korea
Prior art keywords
illumination
sample
measurement
deflectors
metrology
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KR1020237021665A
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English (en)
Korean (ko)
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KR20230127226A (ko
Inventor
앤드류 브이. 힐
암논 마나쎈
아비 아브라모프
아사프 그라낫
안드레이 브이. 쉬체그로프
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케이엘에이 코포레이션
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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/26—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes
    • G01B11/27—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes
    • G01B11/272—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes using photoelectric detection means
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8806—Specially adapted optical and illumination features
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706843—Metrology apparatus
    • G03F7/706849—Irradiation branch, e.g. optical system details, illumination mode or polarisation control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706843—Metrology apparatus
    • G03F7/706851—Detection branch, e.g. detector arrangements, polarisation control, wavelength control or dark/bright field detection
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8806—Specially adapted optical and illumination features
    • G01N2021/8809—Adjustment for highlighting flaws

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Biochemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Microscoopes, Condenser (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
KR1020237021665A 2021-01-06 2021-12-28 계측을 위한 퓨필 평면 빔 스캐닝 Active KR102802345B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US17/142,783 2021-01-06
US17/142,783 US11300524B1 (en) 2021-01-06 2021-01-06 Pupil-plane beam scanning for metrology
PCT/US2021/065259 WO2022150208A1 (en) 2021-01-06 2021-12-28 Pupil-plane beam scanning for metrology

Publications (2)

Publication Number Publication Date
KR20230127226A KR20230127226A (ko) 2023-08-31
KR102802345B1 true KR102802345B1 (ko) 2025-04-29

Family

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KR1020237021665A Active KR102802345B1 (ko) 2021-01-06 2021-12-28 계측을 위한 퓨필 평면 빔 스캐닝

Country Status (7)

Country Link
US (1) US11300524B1 (https=)
EP (1) EP4251979A4 (https=)
JP (1) JP7675828B2 (https=)
KR (1) KR102802345B1 (https=)
CN (1) CN116724225B (https=)
TW (1) TWI880059B (https=)
WO (1) WO2022150208A1 (https=)

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US11899375B2 (en) 2020-11-20 2024-02-13 Kla Corporation Massive overlay metrology sampling with multiple measurement columns
US11841621B2 (en) * 2021-10-29 2023-12-12 KLA Corporation CA Moiré scatterometry overlay
US12032300B2 (en) 2022-02-14 2024-07-09 Kla Corporation Imaging overlay with mutually coherent oblique illumination
US12422363B2 (en) 2022-03-30 2025-09-23 Kla Corporation Scanning scatterometry overlay metrology
US12487190B2 (en) 2022-03-30 2025-12-02 Kla Corporation System and method for isolation of specific fourier pupil frequency in overlay metrology
WO2023248459A1 (ja) * 2022-06-24 2023-12-28 株式会社ニコン 顕微鏡装置およびデータ生成方法
CN119404140A (zh) * 2022-08-22 2025-02-07 Asml荷兰有限公司 量测系统和方法
KR20240076443A (ko) 2022-11-18 2024-05-30 삼성전자주식회사 퓨필 이미지 계측 장치 및 방법
US12235588B2 (en) 2023-02-16 2025-02-25 Kla Corporation Scanning overlay metrology with high signal to noise ratio

Citations (4)

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JP2002174769A (ja) 2000-12-08 2002-06-21 Olympus Optical Co Ltd 光学系及び光学装置
US20150077842A1 (en) 2013-09-19 2015-03-19 Carl Zeiss Microscopy Gmbh High-resolution scanning microscopy
US20170082932A1 (en) 2015-09-23 2017-03-23 Kla-Tencor Corporation Spectroscopic Beam Profile Overlay Metrology
WO2020057900A1 (en) 2018-09-19 2020-03-26 Asml Netherlands B.V. Metrology sensor for position metrology

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US6882417B2 (en) * 2002-03-21 2005-04-19 Applied Materials, Inc. Method and system for detecting defects
US7053999B2 (en) 2002-03-21 2006-05-30 Applied Materials, Inc. Method and system for detecting defects
JP4535260B2 (ja) * 2004-10-19 2010-09-01 株式会社ニコン 照明光学装置、露光装置、および露光方法
DE102012009836A1 (de) * 2012-05-16 2013-11-21 Carl Zeiss Microscopy Gmbh Lichtmikroskop und Verfahren zur Bildaufnahme mit einem Lichtmikroskop
US9091650B2 (en) * 2012-11-27 2015-07-28 Kla-Tencor Corporation Apodization for pupil imaging scatterometry
US9546962B2 (en) * 2014-02-12 2017-01-17 Kla-Tencor Corporation Multi-spot scanning collection optics
DE102014005880A1 (de) 2014-04-17 2015-11-05 Carl Zeiss Ag Lichtrastermikroskop mit vereinfachter Optik, insbesondere mit veränderlicher Pupillenlage
US10976249B1 (en) * 2014-05-12 2021-04-13 Kla-Tencor Corporation Reflective pupil relay system
JP2016038302A (ja) * 2014-08-08 2016-03-22 株式会社日立ハイテクノロジーズ 欠陥検査装置及び欠陥検査方法
US10072921B2 (en) * 2014-12-05 2018-09-11 Kla-Tencor Corporation Methods and systems for spectroscopic beam profile metrology having a first two dimensional detector to detect collected light transmitted by a first wavelength dispersive element
US10527830B2 (en) * 2016-08-12 2020-01-07 Kla-Tencor Corporation Off-axis reflective afocal optical relay
WO2018046278A1 (en) * 2016-09-06 2018-03-15 Asml Holding N.V. Method and device for focusing in an inspection system
US10401738B2 (en) * 2017-08-02 2019-09-03 Kla-Tencor Corporation Overlay metrology using multiple parameter configurations
US11067389B2 (en) * 2018-03-13 2021-07-20 Kla Corporation Overlay metrology system and method
US11118903B2 (en) * 2018-10-17 2021-09-14 Kla Corporation Efficient illumination shaping for scatterometry overlay
CN109211874A (zh) * 2018-11-13 2019-01-15 北京理工大学 后置分光瞳激光共焦拉曼光谱测试方法及装置

Patent Citations (5)

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Publication number Priority date Publication date Assignee Title
JP2002174769A (ja) 2000-12-08 2002-06-21 Olympus Optical Co Ltd 光学系及び光学装置
US20150077842A1 (en) 2013-09-19 2015-03-19 Carl Zeiss Microscopy Gmbh High-resolution scanning microscopy
US20170082932A1 (en) 2015-09-23 2017-03-23 Kla-Tencor Corporation Spectroscopic Beam Profile Overlay Metrology
JP2018535560A (ja) 2015-09-23 2018-11-29 ケーエルエー−テンカー コーポレイション 分光ビームプロファイルオーバーレイ計測
WO2020057900A1 (en) 2018-09-19 2020-03-26 Asml Netherlands B.V. Metrology sensor for position metrology

Also Published As

Publication number Publication date
JP7675828B2 (ja) 2025-05-13
EP4251979A4 (en) 2025-06-25
KR20230127226A (ko) 2023-08-31
US11300524B1 (en) 2022-04-12
TW202235818A (zh) 2022-09-16
CN116724225B (zh) 2024-10-18
EP4251979A1 (en) 2023-10-04
CN116724225A (zh) 2023-09-08
WO2022150208A1 (en) 2022-07-14
TWI880059B (zh) 2025-04-11
JP2024502439A (ja) 2024-01-19

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