JP2018535560A - 分光ビームプロファイルオーバーレイ計測 - Google Patents
分光ビームプロファイルオーバーレイ計測 Download PDFInfo
- Publication number
- JP2018535560A JP2018535560A JP2018534503A JP2018534503A JP2018535560A JP 2018535560 A JP2018535560 A JP 2018535560A JP 2018534503 A JP2018534503 A JP 2018534503A JP 2018534503 A JP2018534503 A JP 2018534503A JP 2018535560 A JP2018535560 A JP 2018535560A
- Authority
- JP
- Japan
- Prior art keywords
- light
- measurement
- illumination
- wavelength
- overlay
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005259 measurement Methods 0.000 title claims abstract description 297
- 230000003595 spectral effect Effects 0.000 title claims description 30
- 238000005286 illumination Methods 0.000 claims abstract description 262
- 238000007493 shaping process Methods 0.000 claims description 74
- 238000000034 method Methods 0.000 claims description 58
- 239000006185 dispersion Substances 0.000 claims description 50
- 230000004044 response Effects 0.000 claims description 10
- 238000001514 detection method Methods 0.000 claims description 8
- 230000035945 sensitivity Effects 0.000 claims description 4
- 238000001914 filtration Methods 0.000 claims 2
- 230000003287 optical effect Effects 0.000 description 83
- 210000001747 pupil Anatomy 0.000 description 55
- 230000003993 interaction Effects 0.000 description 32
- 239000000523 sample Substances 0.000 description 30
- 239000011295 pitch Substances 0.000 description 24
- 230000008569 process Effects 0.000 description 23
- 235000012431 wafers Nutrition 0.000 description 22
- 239000004065 semiconductor Substances 0.000 description 21
- 238000012360 testing method Methods 0.000 description 21
- 238000003909 pattern recognition Methods 0.000 description 18
- 230000010287 polarization Effects 0.000 description 16
- 230000008859 change Effects 0.000 description 13
- 239000010408 film Substances 0.000 description 13
- 230000033001 locomotion Effects 0.000 description 13
- 238000004519 manufacturing process Methods 0.000 description 11
- 238000004458 analytical method Methods 0.000 description 10
- 239000000463 material Substances 0.000 description 10
- 230000007246 mechanism Effects 0.000 description 9
- 230000000694 effects Effects 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 230000005540 biological transmission Effects 0.000 description 7
- 238000013461 design Methods 0.000 description 7
- 230000006870 function Effects 0.000 description 7
- 238000007689 inspection Methods 0.000 description 7
- 238000001459 lithography Methods 0.000 description 7
- 208000013715 atelosteogenesis type I Diseases 0.000 description 6
- 238000009826 distribution Methods 0.000 description 6
- 238000000391 spectroscopic ellipsometry Methods 0.000 description 6
- 238000003860 storage Methods 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- ORQBXQOJMQIAOY-UHFFFAOYSA-N nobelium Chemical compound [No] ORQBXQOJMQIAOY-UHFFFAOYSA-N 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 238000000926 separation method Methods 0.000 description 5
- 230000004075 alteration Effects 0.000 description 4
- 238000000149 argon plasma sintering Methods 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 4
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000007667 floating Methods 0.000 description 4
- 238000002310 reflectometry Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 238000004422 calculation algorithm Methods 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 230000000737 periodic effect Effects 0.000 description 3
- 238000000611 regression analysis Methods 0.000 description 3
- 238000012935 Averaging Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000012512 characterization method Methods 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 238000013507 mapping Methods 0.000 description 2
- 238000000691 measurement method Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910021486 amorphous silicon dioxide Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000004590 computer program Methods 0.000 description 1
- 238000002405 diagnostic procedure Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000002329 infrared spectrum Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000010206 sensitivity analysis Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000002211 ultraviolet spectrum Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7065—Production of alignment light, e.g. light source, control of coherence, polarization, pulse length, wavelength
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
- G03F9/7046—Strategy, e.g. mark, sensor or wavelength selection
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7049—Technique, e.g. interferometric
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7049—Technique, e.g. interferometric
- G03F9/7053—Non-optical, e.g. mechanical, capacitive, using an electron beam, acoustic or thermal waves
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Spectrometry And Color Measurement (AREA)
Abstract
Description
本特許出願は、米国特許法第119条の下で、2015年9月23日出願の米国仮特許出願第62/222,314号、表題「Spectroscopic BPR Method and Apparatus for Overlay Measurement」の優先権を主張するものであり、その主題は、全体の参照により本明細書に組み込まれる。
NA>mλ/d (1)
Claims (20)
- 計測システムであって、
多波長と、二次元ビーム強度断面を有する照明光のビームを供給するように構成された多波長照明源と、
前記照明光のビームを再成形して、その結果、照明光の再成形されたビームが概ね一次元であり長さ寸法によって特徴付けられるビーム強度断面を有するように構成されたビーム成形素子と、
照明光の再成形ビームを受け取って、オーバーレイ計測ターゲットを、照明光の再成形ビームで入射角の範囲にわたり照明し、その結果、照明光の再成形ビームの長さ寸法がオーバーレイ計測ターゲットに、オーバーレイ計測ターゲットの格子構造の範囲の方向に対して平行な第1の方向に投影されるように構成され、さらに、照明に応答して、オーバーレイ計測ターゲットからの光を収集するように構成された高開口数(NA)対物レンズと、
第1の二次元検出器の第1の次元に沿った入射角に従って、また、第1の二次元検出器の第2の次元に沿った波長に従って収集光を検出するように構成された第1の二次元検出器と、
を備えた計測システム。 - 前記第1の二次元検出器はさらに、前記第1の二次元検出器の各ピクセルで検出された光を示す測定信号を生成するように構成され、測定信号は、一意的な波長と入射角でのオーバーレイ計測ターゲットの測定に関連する、請求項1に記載の計測システム。
- さらに、各ピクセルで検出された光を示す測定信号を受信し、
オーバーレイ計測ターゲットに関連する少なくとも1つのオーバーレイパラメータの値を、測定信号に基づいて決定し、
少なくとも1つのオーバーレイパラメータの値をメモリに記憶する、
ように構成されたコンピューティングシステムを備えた、請求項2に記載の計測システム。 - さらに、収集光を受け取り、入射角に従って収集光を伝送し、受け取った収集光を、前記第1の二次元検出器を横断する波長に従って分散するように構成された第1の波長分散素子を備えた、請求項1に記載の計測システム。
- 前記収集光は、第1次数回折光、ゼロ次数回折光、またはそれらの組み合わせを含む、請求項1に記載の計測システム。
- 前記収集光は、前記第1の二次元検出器の第1の領域に投影された第1次数回折光と、第1の領域とは別個の前記第1の二次元検出器の第2の領域に投影されたゼロ次数回折光を含む、請求項1に記載の計測システム。
- オーバーレイ計測ターゲットに関連する少なくとも1つのオーバーレイパラメータの値を決定することは、オーバーレイ測定モデルでの測定信号の反復的回帰に基づく、請求項3に記載の計測システム。
- オーバーレイ計測ターゲットに関連する少なくとも1つのオーバーレイパラメータの値を決定することは、測定信号と訓練された信号応答計測に基づく、請求項3に記載の計測システム。
- 収集光の一部を、第2の二次元検出器の第1の次元に沿った入射角に沿って検出し、収集光の他の一部を、第2の二次元検出器の第2の次元に沿った波長に従って検出するように構成された第2の二次元検出器をさらに備え、前記第1の二次元検出器の波長感度は、前記第2の二次元検出器の波長感度とは異なっている、
請求項1に記載の計測システム。 - 前記照明光のビームの経路内に配置された偏光子素子をさらに備えた、請求項1に記載の計測システム。
- 収集光の経路内に配置された分析器素子と、
前記照明光のビームの経路、収集光の経路、またはそれら両方に配置された少なくとも1つの補償器素子をさらに備えた、請求項10に記載の計測システム。 - 前記ビーム成形素子は回転式であって、その結果、照明光の再成形ビームが、第2のオーバーレイ計測ターゲット上に、第1の方向に対して垂直な第2の方向に投影され、前記第2の方向は、前記第2のオーバーレイ計測ターゲットの格子構造の範囲の方向に対して平行である、請求項1に記載の計測システム。
- 測定スポットサイズを縮小するために、多波長照明源とオーバーレイ計測ターゲットの間の照明経路内に配置されたアポダイザ素子をさらに備える、請求項1に記載の計測システム。
- 前記多波長照明源とオーバーレイ計測ターゲットの間の照明経路内に選択可能に配置された1以上の波長フィルタリング素子、オーバーレイ計測ターゲットと前記第1の二次元検出器の間の収集経路内に選択可能に配置された1以上の波長フィルタリング素子、またはそれらの組み合わせをさらに備えた、請求項1に記載の計測システム。
- 分光ビームプロファイル計測システムであって、
多波長を有する照明光のビームを供給するように構成された広帯域照明源と、
前記照明光のビームを再成形して、その結果、照明光の再成形されたビームが概ね一次元であり長さ寸法によって特徴付けられるビーム強度断面を有するように構成されたビーム成形素子と、
照明光の再成形ビームを受け取って、オーバーレイ計測ターゲットを、照明光の再成形ビームで入射角の範囲にわたり照明し、その結果、照明光の再成形ビームの長さ寸法が、オーバーレイ計測ターゲットに、オーバーレイ計測ターゲットの格子構造の範囲の方向に対して平行な第1の方向に投影されるように構成され、さらに、照明に応答して、オーバーレイ計測ターゲットからの光を収集するように構成された高開口数(NA)対物レンズと、
二次元検出器の第1の次元に沿った入射角に従って、また、二次元検出器の第2の次元に沿った波長に従って収集光を検出するように構成された二次元検出器とを備え、前記収集光は、前記二次元検出器の第1の領域にわたり検出される第1次数回折光と、前記第1の領域とは別個の前記二次元検出器の第2の領域にわたり検出されるゼロ次数回折光を含む、
分光ビームプロファイル計測システム。 - さらに、ゼロ次回折光を受け取り、入射角に従ってゼロ次回折光を伝送し、受け取ったゼロ回折光を、前記二次元検出の第2の次元に沿った波長に従って分散するように構成された波長分散素子を備えた、請求項15に記載の分光ビームプロファイル計測システム。
- 多波長を有し二次元であるビーム強度断面を有する照明光のビームを供給し、
前記照明光のビームを再成形して、その結果、照明光の再成形ビームが、概ね一次元であり長さ寸法によって特徴付けられるビーム強度断面を有するようにさせ、
照明光の再成形ビームの長さ寸法が、オーバーレイ計測ターゲットの格子構造の範囲の方向に対して平行な第1の方向にオーバーレイ計測ターゲット上に投影されるように、試験片の表面上のオーバーレイ計測ターゲットを照明光の再成形ビームで入射角の範囲にわたり照明し、
オーバーレイ計測ターゲットの照明に応答して、測定サイトからの光を収集し、
収集光を、二次元検出器の第1の次元に沿った入射角に従って検出し、また、収集光を、前記二次元検出器の第2の次元に沿った波長に従って検出することを含む方法。 - さらに、前記二次元検出器の各ピクセルで検出された光を示す測定信号を生成することを含み、前記測定信号は、一意的な波長および入射角でのオーバーレイ計測ターゲットの測定に関連する、請求項17に記載の方法。
- さらに、各ピクセルで検出された光を示す測定信号を受信し、
オーバーレイ計測ターゲットに関連する少なくとも1つのオーバーレイパラメータの値を、前記測定信号に基づいて算定し、
前記少なくとも1つのオーバーレイパラメータの値をメモリに記憶することを含む、請求項18に記載の方法。 - 前記収集光は、前記二次元検出器の第1の領域に投影された第1次数回折光と、第1の領域とは別個の前記二次元検出器の第2の領域に投影されたゼロ次数回折光を含む、請求項16に記載の方法。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201562222314P | 2015-09-23 | 2015-09-23 | |
US62/222,314 | 2015-09-23 | ||
US15/271,179 US10101676B2 (en) | 2015-09-23 | 2016-09-20 | Spectroscopic beam profile overlay metrology |
US15/271,179 | 2016-09-20 | ||
PCT/US2016/053136 WO2017053581A1 (en) | 2015-09-23 | 2016-09-22 | Spectroscopic beam profile overlay metrology |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018535560A true JP2018535560A (ja) | 2018-11-29 |
JP6830492B2 JP6830492B2 (ja) | 2021-02-17 |
Family
ID=58282375
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018534503A Active JP6830492B2 (ja) | 2015-09-23 | 2016-09-22 | 分光ビームプロファイルオーバーレイ計測 |
Country Status (7)
Country | Link |
---|---|
US (1) | US10101676B2 (ja) |
JP (1) | JP6830492B2 (ja) |
KR (1) | KR102373283B1 (ja) |
CN (1) | CN108027568B (ja) |
IL (1) | IL257866B (ja) |
TW (1) | TWI703415B (ja) |
WO (1) | WO2017053581A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2022526282A (ja) * | 2019-04-08 | 2022-05-24 | エーエスエムエル ホールディング エヌ.ブイ. | リソグラフィ測定のためのセンサ装置及び方法 |
Families Citing this family (39)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10072921B2 (en) * | 2014-12-05 | 2018-09-11 | Kla-Tencor Corporation | Methods and systems for spectroscopic beam profile metrology having a first two dimensional detector to detect collected light transmitted by a first wavelength dispersive element |
KR20160110594A (ko) | 2015-03-09 | 2016-09-22 | 제주대학교 산학협력단 | 붉바리 종 판별용 pcr 프라이머 세트 및 이를 이용한 붉바리 종 판별 방법 |
US10101676B2 (en) | 2015-09-23 | 2018-10-16 | KLA—Tencor Corporation | Spectroscopic beam profile overlay metrology |
US11313809B1 (en) * | 2016-05-04 | 2022-04-26 | Kla-Tencor Corporation | Process control metrology |
US10690602B2 (en) * | 2017-02-17 | 2020-06-23 | Kla-Tencor Corporation | Methods and systems for measurement of thick films and high aspect ratio structures |
US10598617B2 (en) * | 2017-05-05 | 2020-03-24 | Kla-Tencor Corporation | Metrology guided inspection sample shaping of optical inspection results |
US11378451B2 (en) | 2017-08-07 | 2022-07-05 | Kla Corporation | Bandgap measurements of patterned film stacks using spectroscopic metrology |
KR102388682B1 (ko) * | 2017-09-28 | 2022-04-19 | 에이에스엠엘 홀딩 엔.브이. | 계측 방법 및 디바이스 |
WO2019129465A1 (en) * | 2017-12-28 | 2019-07-04 | Asml Netherlands B.V. | A metrology apparatus for and a method of determining a characteristic of interest of a structure on a substrate |
EP3528048A1 (en) * | 2018-02-15 | 2019-08-21 | ASML Netherlands B.V. | A metrology apparatus for and a method of determining a characteristic of interest of a structure on a substrate |
EP3528049A1 (en) | 2018-02-20 | 2019-08-21 | ASML Netherlands B.V. | Metrology method and apparatus with increased bandwidth |
US11054250B2 (en) * | 2018-04-11 | 2021-07-06 | International Business Machines Corporation | Multi-channel overlay metrology |
CN108897196A (zh) * | 2018-07-11 | 2018-11-27 | 中国科学院微电子研究所 | 基于衍射的套刻误差测量中测量波长的选择方法 |
WO2020046408A1 (en) * | 2018-08-28 | 2020-03-05 | Kla-Tencor Corporation | Off-axis illumination overlay measurement using two-diffracted orders imaging |
KR102120551B1 (ko) * | 2018-09-14 | 2020-06-09 | (주)오로스 테크놀로지 | 오버레이 측정장치 |
KR20210055764A (ko) * | 2018-10-11 | 2021-05-17 | 에이에스엠엘 네델란즈 비.브이. | 멀티 소스 조명 유닛 및 그 작동 방법 |
US11118903B2 (en) * | 2018-10-17 | 2021-09-14 | Kla Corporation | Efficient illumination shaping for scatterometry overlay |
US11181831B2 (en) | 2018-12-12 | 2021-11-23 | Samsung Electronics Co., Ltd. | Methods of manufacturing semiconductor device |
DE102019201468A1 (de) * | 2019-02-05 | 2020-08-06 | Carl Zeiss Smt Gmbh | Vorrichtung und Verfahren zum Reparieren einer fotolithographischen Maske |
CN113795792A (zh) * | 2019-05-06 | 2021-12-14 | Asml荷兰有限公司 | 暗场显微镜 |
KR20210011278A (ko) | 2019-07-22 | 2021-02-01 | 삼성전자주식회사 | Ie 기반 검사 방법, 및 그 검사 방법을 이용한 반도체 소자 제조방법 |
EP3783439A1 (en) * | 2019-08-22 | 2021-02-24 | ASML Netherlands B.V. | Metrology device and detection apparatus therefor |
US11899380B2 (en) * | 2019-10-21 | 2024-02-13 | Asml Holding N.V. | Apparatus for and method of sensing alignment marks |
KR20220122730A (ko) * | 2020-01-29 | 2022-09-02 | 에이에스엠엘 홀딩 엔.브이. | 소형 오버레이 측정 시스템의 광학 설계 |
US11481922B2 (en) * | 2020-04-07 | 2022-10-25 | Kla Corporation | Online navigational drift correction for metrology measurements |
US11346657B2 (en) * | 2020-05-22 | 2022-05-31 | Kla Corporation | Measurement modes for overlay |
KR102461662B1 (ko) * | 2020-07-02 | 2022-11-02 | (주)오로스 테크놀로지 | 오버레이 측정장치 |
US11300405B2 (en) * | 2020-08-03 | 2022-04-12 | Kla Corporation | Grey-mode scanning scatterometry overlay metrology |
US11300524B1 (en) * | 2021-01-06 | 2022-04-12 | Kla Corporation | Pupil-plane beam scanning for metrology |
EP4113210A1 (en) * | 2021-07-01 | 2023-01-04 | ASML Netherlands B.V. | A method of monitoring a measurement recipe and associated metrology methods and apparatuses |
US20230016619A1 (en) * | 2021-07-15 | 2023-01-19 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for ion implantation uniformity control |
US20230236113A1 (en) * | 2022-01-25 | 2023-07-27 | Kla Corporation | Annular apodizer for small target overlay measurement |
JP2023116048A (ja) * | 2022-02-09 | 2023-08-22 | キオクシア株式会社 | 計測装置および計測方法 |
EP4279994A1 (en) * | 2022-05-20 | 2023-11-22 | ASML Netherlands B.V. | Illumination module and associated methods and metrology apparatus |
WO2023222328A1 (en) * | 2022-05-20 | 2023-11-23 | Asml Netherlands B.V. | Illumination module and associated methods and metrology apparatus |
US12078604B2 (en) | 2022-09-05 | 2024-09-03 | Bruker Technologies Ltd. | Monitoring properties of X-ray beam during X-ray analysis |
EP4354224A1 (en) * | 2022-10-11 | 2024-04-17 | ASML Netherlands B.V. | Method for operating a detection system of a metrology device and associated metrology device |
KR102550408B1 (ko) | 2023-02-14 | 2023-07-03 | (주)오로스 테크놀로지 | 오버레이 측정장치 및 방법 |
US11971248B1 (en) | 2023-03-29 | 2024-04-30 | Auros Technology, Inc. | Wavelength-tunable fiber optic light source and overlay measurement device with same |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09504861A (ja) * | 1993-07-16 | 1997-05-13 | サーマ‐ウェイブ・インク | 多数角度分光分析器 |
JP2012104586A (ja) * | 2010-11-09 | 2012-05-31 | Elpida Memory Inc | 半導体計測装置 |
JP2013061185A (ja) * | 2011-09-12 | 2013-04-04 | Toshiba Corp | パターン検査装置およびパターン検査方法 |
WO2015113724A1 (en) * | 2014-02-03 | 2015-08-06 | Asml Netherlands B.V. | Metrology method and apparatus, substrate, lithographic system and device manufacturing method |
Family Cites Families (61)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6734967B1 (en) | 1995-01-19 | 2004-05-11 | Kla-Tencor Technologies Corporation | Focused beam spectroscopic ellipsometry method and system |
US5608526A (en) | 1995-01-19 | 1997-03-04 | Tencor Instruments | Focused beam spectroscopic ellipsometry method and system |
US5877859A (en) | 1996-07-24 | 1999-03-02 | Therma-Wave, Inc. | Broadband spectroscopic rotating compensator ellipsometer |
US5859424A (en) | 1997-04-08 | 1999-01-12 | Kla-Tencor Corporation | Apodizing filter system useful for reducing spot size in optical measurements and other applications |
US6429943B1 (en) | 2000-03-29 | 2002-08-06 | Therma-Wave, Inc. | Critical dimension analysis with simultaneous multiple angle of incidence measurements |
EP1309875A2 (en) | 2000-08-11 | 2003-05-14 | Therma-Wave, Inc. | Device and method for optical inspection of semiconductor wafer |
US7068833B1 (en) | 2000-08-30 | 2006-06-27 | Kla-Tencor Corporation | Overlay marks, methods of overlay mark design and methods of overlay measurements |
US20020190207A1 (en) | 2000-09-20 | 2002-12-19 | Ady Levy | Methods and systems for determining a characteristic of micro defects on a specimen |
US7515279B2 (en) * | 2001-03-02 | 2009-04-07 | Nanometrics Incorporated | Line profile asymmetry measurement |
US6895075B2 (en) | 2003-02-12 | 2005-05-17 | Jordan Valley Applied Radiation Ltd. | X-ray reflectometry with small-angle scattering measurement |
US7280230B2 (en) | 2001-12-19 | 2007-10-09 | Kla-Tencor Technologies Corporation | Parametric profiling using optical spectroscopic systems |
US6816570B2 (en) | 2002-03-07 | 2004-11-09 | Kla-Tencor Corporation | Multi-technique thin film analysis tool |
US7352453B2 (en) | 2003-01-17 | 2008-04-01 | Kla-Tencor Technologies Corporation | Method for process optimization and control by comparison between 2 or more measured scatterometry signals |
US7791727B2 (en) * | 2004-08-16 | 2010-09-07 | Asml Netherlands B.V. | Method and apparatus for angular-resolved spectroscopic lithography characterization |
US20060164649A1 (en) | 2005-01-24 | 2006-07-27 | Eliezer Rosengaus | Multi-spectral techniques for defocus detection |
US7478019B2 (en) | 2005-01-26 | 2009-01-13 | Kla-Tencor Corporation | Multiple tool and structure analysis |
US20060273263A1 (en) | 2005-02-25 | 2006-12-07 | Accent Optical Technologies, Inc. | Apparatus and method for enhanced critical dimension scatterometry |
US7567351B2 (en) | 2006-02-02 | 2009-07-28 | Kla-Tencor Corporation | High resolution monitoring of CD variations |
US7463369B2 (en) | 2006-03-29 | 2008-12-09 | Kla-Tencor Technologies Corp. | Systems and methods for measuring one or more characteristics of patterned features on a specimen |
US8126302B2 (en) | 2006-03-31 | 2012-02-28 | Novartis Ag | Method and system for correcting an optical beam |
US7532331B2 (en) | 2006-09-14 | 2009-05-12 | Asml Netherlands B.V. | Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method |
US8699027B2 (en) | 2007-07-27 | 2014-04-15 | Rudolph Technologies, Inc. | Multiple measurement techniques including focused beam scatterometry for characterization of samples |
US7734437B2 (en) | 2008-03-27 | 2010-06-08 | Tokyo Electron Limited | Apparatus for designing an optical metrology system optimized with signal criteria |
US8248617B2 (en) | 2008-04-22 | 2012-08-21 | Zygo Corporation | Interferometer for overlay measurements |
US7912658B2 (en) | 2008-05-28 | 2011-03-22 | Kla-Tencor Corp. | Systems and methods for determining two or more characteristics of a wafer |
NL2003404A (en) | 2008-09-16 | 2010-03-17 | Asml Netherlands Bv | Inspection method and apparatus, substrate, lithographic apparatus, lithographic processing cell and device manufacturing method. |
US7929667B1 (en) | 2008-10-02 | 2011-04-19 | Kla-Tencor Corporation | High brightness X-ray metrology |
US8030631B2 (en) | 2009-03-30 | 2011-10-04 | Tokyo Electron Limited | Apparatus for controlling angle of incidence of multiple illumination beams |
JP5215357B2 (ja) * | 2009-07-16 | 2013-06-19 | エーエスエムエル ネザーランズ ビー.ブイ. | 多重ヘッドアライメントシステムにおけるアライメントヘッドの位置キャリブレーション |
US8848186B2 (en) | 2009-07-22 | 2014-09-30 | Kla-Tencor Corporation | Angle-resolved antisymmetric scatterometry |
JP2013502592A (ja) | 2009-08-24 | 2013-01-24 | エーエスエムエル ネザーランズ ビー.ブイ. | メトロロジ方法および装置、リソグラフィ装置、リソグラフィプロセシングセル、およびメトロロジターゲットを備える基板 |
US8441639B2 (en) * | 2009-09-03 | 2013-05-14 | Kla-Tencor Corp. | Metrology systems and methods |
US20110246400A1 (en) * | 2010-03-31 | 2011-10-06 | Tokyo Electron Limited | System for optical metrology optimization using ray tracing |
US8896832B2 (en) | 2010-06-17 | 2014-11-25 | Kla-Tencor Corp. | Discrete polarization scatterometry |
NL2008936A (en) | 2011-07-28 | 2013-01-29 | Asml Netherlands Bv | Illumination source for use in inspection methods and/or lithography inspection and lithographic apparatus and inspection method. |
US20130042089A1 (en) | 2011-08-11 | 2013-02-14 | Advanced Micro Devices, Inc. | Word line late kill in scheduler |
US9228943B2 (en) | 2011-10-27 | 2016-01-05 | Kla-Tencor Corporation | Dynamically adjustable semiconductor metrology system |
US8570531B2 (en) | 2011-12-11 | 2013-10-29 | Tokyo Electron Limited | Method of regenerating diffraction signals for optical metrology systems |
CN105549341A (zh) | 2012-02-21 | 2016-05-04 | Asml荷兰有限公司 | 检查设备和方法 |
WO2013181156A1 (en) | 2012-05-29 | 2013-12-05 | Kla-Tencor Corporation | Small spot size spectroscopic ellipsometer |
US10132763B2 (en) | 2012-07-23 | 2018-11-20 | Asml Netherlands B.V. | Inspection method and apparatus, lithographic system and device manufacturing method |
WO2014062972A1 (en) | 2012-10-18 | 2014-04-24 | Kla-Tencor Corporation | Symmetric target design in scatterometry overlay metrology |
US9581430B2 (en) | 2012-10-19 | 2017-02-28 | Kla-Tencor Corporation | Phase characterization of targets |
NL2011726A (en) * | 2012-11-05 | 2014-05-08 | Asml Netherlands Bv | Method and apparatus for measuring asymmetry of a microstructure, position measuring method, position measuring apparatus, lithographic apparatus and device manufacturing method. |
TWI598972B (zh) | 2012-11-09 | 2017-09-11 | 克萊譚克公司 | 減少散射量測疊對量測技術中演算法之不準確 |
US9255891B2 (en) | 2012-11-20 | 2016-02-09 | Kla-Tencor Corporation | Inspection beam shaping for improved detection sensitivity |
NL2011816A (en) | 2012-11-30 | 2014-06-04 | Asml Netherlands Bv | Method of determining dose and focus, inspection apparatus, patterning device, substrate and device manufacturing method. |
US9217717B2 (en) | 2012-12-17 | 2015-12-22 | Kla-Tencor Corporation | Two dimensional optical detector with multiple shift registers |
US10769320B2 (en) | 2012-12-18 | 2020-09-08 | Kla-Tencor Corporation | Integrated use of model-based metrology and a process model |
US9116103B2 (en) | 2013-01-14 | 2015-08-25 | Kla-Tencor Corporation | Multiple angles of incidence semiconductor metrology systems and methods |
US9291554B2 (en) | 2013-02-05 | 2016-03-22 | Kla-Tencor Corporation | Method of electromagnetic modeling of finite structures and finite illumination for metrology and inspection |
WO2014138522A1 (en) | 2013-03-08 | 2014-09-12 | Kla-Tencor Corporation | Pupil plane calibration for scatterometry overlay measurement |
US10101670B2 (en) | 2013-03-27 | 2018-10-16 | Kla-Tencor Corporation | Statistical model-based metrology |
US9875946B2 (en) | 2013-04-19 | 2018-01-23 | Kla-Tencor Corporation | On-device metrology |
US9383661B2 (en) | 2013-08-10 | 2016-07-05 | Kla-Tencor Corporation | Methods and apparatus for determining focus |
US10935893B2 (en) | 2013-08-11 | 2021-03-02 | Kla-Tencor Corporation | Differential methods and apparatus for metrology of semiconductor targets |
US9778213B2 (en) | 2013-08-19 | 2017-10-03 | Kla-Tencor Corporation | Metrology tool with combined XRF and SAXS capabilities |
US10139352B2 (en) | 2014-10-18 | 2018-11-27 | Kla-Tenor Corporation | Measurement of small box size targets |
US10072921B2 (en) | 2014-12-05 | 2018-09-11 | Kla-Tencor Corporation | Methods and systems for spectroscopic beam profile metrology having a first two dimensional detector to detect collected light transmitted by a first wavelength dispersive element |
US10175396B2 (en) * | 2014-12-11 | 2019-01-08 | Rambus Inc. | Ultra-miniature wide-angle lensless CMOS visual edge localizer |
US10101676B2 (en) | 2015-09-23 | 2018-10-16 | KLA—Tencor Corporation | Spectroscopic beam profile overlay metrology |
-
2016
- 2016-09-20 US US15/271,179 patent/US10101676B2/en active Active
- 2016-09-22 CN CN201680052189.6A patent/CN108027568B/zh active Active
- 2016-09-22 WO PCT/US2016/053136 patent/WO2017053581A1/en active Application Filing
- 2016-09-22 JP JP2018534503A patent/JP6830492B2/ja active Active
- 2016-09-22 KR KR1020187010091A patent/KR102373283B1/ko active IP Right Grant
- 2016-09-23 TW TW105130737A patent/TWI703415B/zh active
-
2018
- 2018-03-05 IL IL257866A patent/IL257866B/en unknown
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09504861A (ja) * | 1993-07-16 | 1997-05-13 | サーマ‐ウェイブ・インク | 多数角度分光分析器 |
JP2012104586A (ja) * | 2010-11-09 | 2012-05-31 | Elpida Memory Inc | 半導体計測装置 |
JP2013061185A (ja) * | 2011-09-12 | 2013-04-04 | Toshiba Corp | パターン検査装置およびパターン検査方法 |
WO2015113724A1 (en) * | 2014-02-03 | 2015-08-06 | Asml Netherlands B.V. | Metrology method and apparatus, substrate, lithographic system and device manufacturing method |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2022526282A (ja) * | 2019-04-08 | 2022-05-24 | エーエスエムエル ホールディング エヌ.ブイ. | リソグラフィ測定のためのセンサ装置及び方法 |
US11526091B2 (en) | 2019-04-08 | 2022-12-13 | Asml Holding N.V. | Sensor apparatus and method for lithographic measurements |
JP7361787B2 (ja) | 2019-04-08 | 2023-10-16 | エーエスエムエル ホールディング エヌ.ブイ. | リソグラフィ測定のためのセンサ装置及び方法 |
Also Published As
Publication number | Publication date |
---|---|
US10101676B2 (en) | 2018-10-16 |
TWI703415B (zh) | 2020-09-01 |
IL257866B (en) | 2021-08-31 |
CN108027568B (zh) | 2020-08-14 |
JP6830492B2 (ja) | 2021-02-17 |
CN108027568A (zh) | 2018-05-11 |
TW201721308A (zh) | 2017-06-16 |
KR102373283B1 (ko) | 2022-03-10 |
IL257866A (en) | 2018-05-31 |
WO2017053581A1 (en) | 2017-03-30 |
US20170082932A1 (en) | 2017-03-23 |
KR20180045026A (ko) | 2018-05-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6830492B2 (ja) | 分光ビームプロファイルオーバーレイ計測 | |
US10234271B2 (en) | Method and system for spectroscopic beam profile metrology including a detection of collected light according to wavelength along a third dimension of a hyperspectral detector | |
US9952140B2 (en) | Small spot size spectroscopic ellipsometer | |
US11852590B1 (en) | Systems and methods for metrology with layer-specific illumination spectra | |
CN110062952B (zh) | 同时多重角度光谱 | |
CN113348361B (zh) | 用于共址计量的方法及系统 | |
US20060285111A1 (en) | Apparatuses and methods for enhanced critical dimension scatterometry | |
US10429296B2 (en) | Multilayer film metrology using an effective media approximation | |
JP2020500289A (ja) | 高アスペクト比構造測定のための赤外分光反射計 | |
TW201643414A (zh) | 具有小照明光斑尺寸之光學計量 | |
KR20140127339A (ko) | 필드 향상 요소를 갖는 타겟을 사용하는 광학 계측 | |
JP2023168422A (ja) | 高アスペクト比構造の測定のための中赤外分光法及びシステム | |
JP2023512258A (ja) | 接合されたウェハのオーバレイ計測 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20190910 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20200826 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20200908 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20201207 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20210105 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20210126 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6830492 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |