CN116724225B - 用于计量的光瞳平面光束扫描 - Google Patents

用于计量的光瞳平面光束扫描 Download PDF

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Publication number
CN116724225B
CN116724225B CN202180086043.4A CN202180086043A CN116724225B CN 116724225 B CN116724225 B CN 116724225B CN 202180086043 A CN202180086043 A CN 202180086043A CN 116724225 B CN116724225 B CN 116724225B
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China
Prior art keywords
illumination
sample
measurement
deflectors
path
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CN202180086043.4A
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English (en)
Chinese (zh)
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CN116724225A (zh
Inventor
A·V·希尔
A·玛纳森
A·阿布拉莫夫
A·格拉诺特
A·V·舒杰葛洛夫
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KLA Corp
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KLA Tencor Corp
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/26—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes
    • G01B11/27—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes
    • G01B11/272—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes using photoelectric detection means
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8806—Specially adapted optical and illumination features
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706843—Metrology apparatus
    • G03F7/706849—Irradiation branch, e.g. optical system details, illumination mode or polarisation control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706843—Metrology apparatus
    • G03F7/706851—Detection branch, e.g. detector arrangements, polarisation control, wavelength control or dark/bright field detection
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8806—Specially adapted optical and illumination features
    • G01N2021/8809—Adjustment for highlighting flaws

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Biochemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Microscoopes, Condenser (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
CN202180086043.4A 2021-01-06 2021-12-28 用于计量的光瞳平面光束扫描 Active CN116724225B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US17/142,783 2021-01-06
US17/142,783 US11300524B1 (en) 2021-01-06 2021-01-06 Pupil-plane beam scanning for metrology
PCT/US2021/065259 WO2022150208A1 (en) 2021-01-06 2021-12-28 Pupil-plane beam scanning for metrology

Publications (2)

Publication Number Publication Date
CN116724225A CN116724225A (zh) 2023-09-08
CN116724225B true CN116724225B (zh) 2024-10-18

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Country Status (7)

Country Link
US (1) US11300524B1 (https=)
EP (1) EP4251979A4 (https=)
JP (1) JP7675828B2 (https=)
KR (1) KR102802345B1 (https=)
CN (1) CN116724225B (https=)
TW (1) TWI880059B (https=)
WO (1) WO2022150208A1 (https=)

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US11899375B2 (en) 2020-11-20 2024-02-13 Kla Corporation Massive overlay metrology sampling with multiple measurement columns
US11841621B2 (en) * 2021-10-29 2023-12-12 KLA Corporation CA Moiré scatterometry overlay
US12032300B2 (en) 2022-02-14 2024-07-09 Kla Corporation Imaging overlay with mutually coherent oblique illumination
US12422363B2 (en) 2022-03-30 2025-09-23 Kla Corporation Scanning scatterometry overlay metrology
US12487190B2 (en) 2022-03-30 2025-12-02 Kla Corporation System and method for isolation of specific fourier pupil frequency in overlay metrology
WO2023248459A1 (ja) * 2022-06-24 2023-12-28 株式会社ニコン 顕微鏡装置およびデータ生成方法
CN119404140A (zh) * 2022-08-22 2025-02-07 Asml荷兰有限公司 量测系统和方法
KR20240076443A (ko) 2022-11-18 2024-05-30 삼성전자주식회사 퓨필 이미지 계측 장치 및 방법
US12235588B2 (en) 2023-02-16 2025-02-25 Kla Corporation Scanning overlay metrology with high signal to noise ratio

Citations (1)

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CN106461926A (zh) * 2014-04-17 2017-02-22 卡尔蔡司股份公司 具有简化的光学器件、尤其是具有可变的光瞳位置的光扫描显微镜

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JP4786027B2 (ja) 2000-12-08 2011-10-05 オリンパス株式会社 光学系及び光学装置
US6882417B2 (en) * 2002-03-21 2005-04-19 Applied Materials, Inc. Method and system for detecting defects
US7053999B2 (en) 2002-03-21 2006-05-30 Applied Materials, Inc. Method and system for detecting defects
JP4535260B2 (ja) * 2004-10-19 2010-09-01 株式会社ニコン 照明光学装置、露光装置、および露光方法
DE102012009836A1 (de) * 2012-05-16 2013-11-21 Carl Zeiss Microscopy Gmbh Lichtmikroskop und Verfahren zur Bildaufnahme mit einem Lichtmikroskop
US9091650B2 (en) * 2012-11-27 2015-07-28 Kla-Tencor Corporation Apodization for pupil imaging scatterometry
DE102013015933A1 (de) 2013-09-19 2015-03-19 Carl Zeiss Microscopy Gmbh Hochauflösende Scanning-Mikroskopie
US9546962B2 (en) * 2014-02-12 2017-01-17 Kla-Tencor Corporation Multi-spot scanning collection optics
US10976249B1 (en) * 2014-05-12 2021-04-13 Kla-Tencor Corporation Reflective pupil relay system
JP2016038302A (ja) * 2014-08-08 2016-03-22 株式会社日立ハイテクノロジーズ 欠陥検査装置及び欠陥検査方法
US10072921B2 (en) * 2014-12-05 2018-09-11 Kla-Tencor Corporation Methods and systems for spectroscopic beam profile metrology having a first two dimensional detector to detect collected light transmitted by a first wavelength dispersive element
US10101676B2 (en) * 2015-09-23 2018-10-16 KLA—Tencor Corporation Spectroscopic beam profile overlay metrology
US10527830B2 (en) * 2016-08-12 2020-01-07 Kla-Tencor Corporation Off-axis reflective afocal optical relay
WO2018046278A1 (en) * 2016-09-06 2018-03-15 Asml Holding N.V. Method and device for focusing in an inspection system
US10401738B2 (en) * 2017-08-02 2019-09-03 Kla-Tencor Corporation Overlay metrology using multiple parameter configurations
US11067389B2 (en) * 2018-03-13 2021-07-20 Kla Corporation Overlay metrology system and method
CN112740109B (zh) 2018-09-19 2024-04-30 Asml荷兰有限公司 用于位置量测的量测传感器
US11118903B2 (en) * 2018-10-17 2021-09-14 Kla Corporation Efficient illumination shaping for scatterometry overlay
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Also Published As

Publication number Publication date
JP7675828B2 (ja) 2025-05-13
EP4251979A4 (en) 2025-06-25
KR20230127226A (ko) 2023-08-31
US11300524B1 (en) 2022-04-12
TW202235818A (zh) 2022-09-16
EP4251979A1 (en) 2023-10-04
CN116724225A (zh) 2023-09-08
WO2022150208A1 (en) 2022-07-14
TWI880059B (zh) 2025-04-11
KR102802345B1 (ko) 2025-04-29
JP2024502439A (ja) 2024-01-19

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