KR102794269B1 - 발광 소자 - Google Patents

발광 소자 Download PDF

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Publication number
KR102794269B1
KR102794269B1 KR1020217011687A KR20217011687A KR102794269B1 KR 102794269 B1 KR102794269 B1 KR 102794269B1 KR 1020217011687 A KR1020217011687 A KR 1020217011687A KR 20217011687 A KR20217011687 A KR 20217011687A KR 102794269 B1 KR102794269 B1 KR 102794269B1
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South Korea
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light
pad
emitting
semiconductor layer
pattern
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Korean (ko)
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KR20210076013A (ko
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이정훈
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서울바이오시스 주식회사
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H01L22/24—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8514—Wavelength conversion means characterised by their shape, e.g. plate or foil
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/235—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising optical enhancement of defects or not-directly-visible states
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/032—Manufacture or treatment of electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/034—Manufacture or treatment of coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8314—Electrodes characterised by their shape extending at least partially onto an outer side surface of the bodies

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  • Led Device Packages (AREA)
  • Led Devices (AREA)
KR1020217011687A 2018-11-13 2019-11-12 발광 소자 Active KR102794269B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201862760381P 2018-11-13 2018-11-13
US62/760,381 2018-11-13
US16/676,711 US11967605B2 (en) 2018-11-13 2019-11-07 Light emitting device
US16/676,711 2019-11-07
PCT/KR2019/015342 WO2020101323A1 (ko) 2018-11-13 2019-11-12 발광 소자

Publications (2)

Publication Number Publication Date
KR20210076013A KR20210076013A (ko) 2021-06-23
KR102794269B1 true KR102794269B1 (ko) 2025-05-15

Family

ID=70552001

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020217011687A Active KR102794269B1 (ko) 2018-11-13 2019-11-12 발광 소자

Country Status (7)

Country Link
US (2) US11967605B2 (https=)
EP (1) EP3882990A4 (https=)
JP (1) JP7574182B2 (https=)
KR (1) KR102794269B1 (https=)
CN (2) CN210743981U (https=)
BR (1) BR112021009132A2 (https=)
WO (1) WO2020101323A1 (https=)

Cited By (1)

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KR101541754B1 (ko) 2014-12-23 2015-08-05 극동크리트 주식회사 겹침형 방수시트 및 그 제조 방법 및 이를 이용한 방수 공법

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US11967605B2 (en) * 2018-11-13 2024-04-23 Seoul Viosys Co., Ltd. Light emitting device
EP3671812B1 (en) * 2018-12-19 2022-02-09 IMEC vzw A method for bonding and interconnecting semiconductor chips
US11211528B2 (en) 2019-03-13 2021-12-28 Seoul Viosys Co., Ltd. Light emitting device for display and display apparatus having the same
CN111433921B (zh) * 2019-12-16 2023-08-15 厦门三安光电有限公司 一种发光二极管
US11880052B2 (en) 2020-11-20 2024-01-23 Applied Materials, Inc. Structure and method of mirror grounding in LCoS devices
US12055821B2 (en) 2020-11-20 2024-08-06 Applied Materials, Inc. Structure and method of bi-layer pixel isolation in advanced LCOS back-plane
US11881539B2 (en) * 2020-11-20 2024-01-23 Applied Materials, Inc. Structure and method of advanced LCoS back-plane having highly reflective pixel via metallization
US11908678B2 (en) 2021-01-14 2024-02-20 Applied Materials, Inc. Method of CMP integration for improved optical uniformity in advanced LCOS back-plane
JP7432844B2 (ja) * 2021-12-17 2024-02-19 日亜化学工業株式会社 窒化物半導体発光素子
KR102599275B1 (ko) * 2022-01-25 2023-11-07 주식회사 썬다이오드코리아 수직 적층 구조를 가지는 마이크로 디스플레이의 화소
WO2024129810A1 (en) * 2022-12-16 2024-06-20 Lumileds Llc Die metallization for dense packed arrays
WO2026053780A1 (ja) * 2024-09-04 2026-03-12 学校法人名城大学 半導体発光素子と半導体発光装置、及びその製造方法

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US20090278142A1 (en) * 2008-05-12 2009-11-12 Sony Corporation Light-emitting diode display and method for manufacturing the same

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JP2005072323A (ja) 2003-08-26 2005-03-17 Oki Data Corp 半導体装置
US20060027820A1 (en) 2004-07-07 2006-02-09 Densen Cao Monolitholic LED chip to emit multiple colors
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101541754B1 (ko) 2014-12-23 2015-08-05 극동크리트 주식회사 겹침형 방수시트 및 그 제조 방법 및 이를 이용한 방수 공법

Also Published As

Publication number Publication date
EP3882990A1 (en) 2021-09-22
JP2022505543A (ja) 2022-01-14
JP7574182B2 (ja) 2024-10-28
CN210743981U (zh) 2020-06-12
KR20210076013A (ko) 2021-06-23
BR112021009132A2 (pt) 2021-08-10
WO2020101323A1 (ko) 2020-05-22
CN112970126A (zh) 2021-06-15
US11967605B2 (en) 2024-04-23
EP3882990A4 (en) 2022-08-10
US20200152691A1 (en) 2020-05-14
CN112970126B (zh) 2024-08-23
US20240274643A1 (en) 2024-08-15

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