KR102793452B1 - 경화성 수지 조성물, 경화물, 적층체, 경화물의 제조 방법, 및, 반도체 디바이스, 및, 광염기 발생제 - Google Patents

경화성 수지 조성물, 경화물, 적층체, 경화물의 제조 방법, 및, 반도체 디바이스, 및, 광염기 발생제 Download PDF

Info

Publication number
KR102793452B1
KR102793452B1 KR1020237006941A KR20237006941A KR102793452B1 KR 102793452 B1 KR102793452 B1 KR 102793452B1 KR 1020237006941 A KR1020237006941 A KR 1020237006941A KR 20237006941 A KR20237006941 A KR 20237006941A KR 102793452 B1 KR102793452 B1 KR 102793452B1
Authority
KR
South Korea
Prior art keywords
group
formula
carbon atoms
compound
preferable
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020237006941A
Other languages
English (en)
Korean (ko)
Other versions
KR20230045608A (ko
Inventor
아츠야스 노자키
Original Assignee
후지필름 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 후지필름 가부시키가이샤 filed Critical 후지필름 가부시키가이샤
Publication of KR20230045608A publication Critical patent/KR20230045608A/ko
Application granted granted Critical
Publication of KR102793452B1 publication Critical patent/KR102793452B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/02—Silicon compounds
    • C07F7/08—Compounds having one or more C—Si linkages
    • C07F7/18—Compounds having one or more C—Si linkages as well as one or more C—O—Si linkages
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/14—Polyamide-imides
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/18—Polybenzimidazoles
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/22—Polybenzoxazoles
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G03F7/031—Organic compounds not covered by group G03F7/029
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • G03F7/037—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polyamides or polyimides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0755—Non-macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
  • Materials For Photolithography (AREA)
KR1020237006941A 2020-09-01 2021-08-31 경화성 수지 조성물, 경화물, 적층체, 경화물의 제조 방법, 및, 반도체 디바이스, 및, 광염기 발생제 Active KR102793452B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2020-147110 2020-09-01
JP2020147110 2020-09-01
PCT/JP2021/031965 WO2022050278A1 (ja) 2020-09-01 2021-08-31 硬化性樹脂組成物、硬化物、積層体、硬化物の製造方法、及び、半導体デバイス、並びに、光塩基発生剤

Publications (2)

Publication Number Publication Date
KR20230045608A KR20230045608A (ko) 2023-04-04
KR102793452B1 true KR102793452B1 (ko) 2025-04-09

Family

ID=80492257

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020237006941A Active KR102793452B1 (ko) 2020-09-01 2021-08-31 경화성 수지 조성물, 경화물, 적층체, 경화물의 제조 방법, 및, 반도체 디바이스, 및, 광염기 발생제

Country Status (3)

Country Link
JP (1) JP7612698B2 (https=)
KR (1) KR102793452B1 (https=)
WO (1) WO2022050278A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023189126A1 (ja) * 2022-03-29 2023-10-05 富士フイルム株式会社 樹脂組成物、硬化物、積層体、硬化物の製造方法、積層体の製造方法、半導体デバイスの製造方法、及び、半導体デバイス
JPWO2024181276A1 (https=) 2023-03-01 2024-09-06
CN118894880A (zh) * 2024-07-11 2024-11-05 上海彤程电子材料有限公司 一种含有发色团的硅氧烷的制备方法
WO2026069942A1 (ja) * 2024-09-27 2026-04-02 三菱瓦斯化学株式会社 ポリイミド樹脂前駆体組成物及びポリイミドフィルム

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012092328A (ja) * 2010-09-30 2012-05-17 Dainippon Printing Co Ltd 塩基発生剤、感光性樹脂組成物、当該感光性樹脂組成物からなるパターン形成用材料、当該感光性樹脂組成物を用いたレリーフパターンの製造方法並びに物品
WO2020170997A1 (ja) * 2019-02-22 2020-08-27 富士フイルム株式会社 硬化性樹脂組成物、硬化膜、積層体、硬化膜の製造方法、半導体デバイス、及び、熱塩基発生剤

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2858940B2 (ja) * 1990-11-26 1999-02-17 シプロ化成株式会社 新規ベンゾトリアゾール化合物の製造方法
JP2011046918A (ja) 2009-07-31 2011-03-10 Hitachi Chemical Dupont Microsystems Ltd 電子部品の絶縁膜又は表面保護膜用樹脂組成物、パターン硬化膜の製造方法及び電子部品
JP2012093744A (ja) * 2010-09-30 2012-05-17 Dainippon Printing Co Ltd 感光性樹脂組成物、当該感光性樹脂組成物からなるパターン形成用材料、当該感光性樹脂組成物を用いたレリーフパターンの製造方法並びに物品
JP5803635B2 (ja) * 2011-12-07 2015-11-04 Jsr株式会社 ポジ型感放射線性組成物、硬化膜、硬化膜の形成方法
JP6349335B2 (ja) * 2015-04-28 2018-06-27 富士フイルム株式会社 感光性樹脂組成物、硬化膜の製造方法、硬化膜、液晶表示装置、有機エレクトロルミネッセンス表示装置およびタッチパネル
KR101915541B1 (ko) * 2015-04-28 2018-11-06 후지필름 가부시키가이샤 감광성 수지 조성물, 경화막의 제조 방법, 경화막, 액정 표시 장치, 유기 일렉트로루미네선스 표시 장치 및 터치패널
KR101985215B1 (ko) * 2015-05-29 2019-06-03 후지필름 가부시키가이샤 폴리이미드 전구체 조성물, 감광성 수지 조성물, 경화막, 경화막의 제조 방법, 반도체 디바이스 및 폴리이미드 전구체 조성물의 제조 방법
TWI830588B (zh) * 2016-08-01 2024-01-21 日商富士軟片股份有限公司 感光性樹脂組成物、硬化膜、積層體、硬化膜的製造方法、積層體的製造方法及半導體元件
JP6903971B2 (ja) * 2017-03-21 2021-07-14 東洋インキＳｃホールディングス株式会社 潜像形成用組成物、およびその利用
JP7121505B2 (ja) * 2017-10-11 2022-08-18 株式会社ニコン 化合物、パターン形成用基板、光分解性カップリング剤、パターン形成方法及びトランジスタの製造方法
JP7313180B2 (ja) 2018-04-23 2023-07-24 旭化成株式会社 感光性樹脂組成物、硬化レリーフパターンの製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012092328A (ja) * 2010-09-30 2012-05-17 Dainippon Printing Co Ltd 塩基発生剤、感光性樹脂組成物、当該感光性樹脂組成物からなるパターン形成用材料、当該感光性樹脂組成物を用いたレリーフパターンの製造方法並びに物品
WO2020170997A1 (ja) * 2019-02-22 2020-08-27 富士フイルム株式会社 硬化性樹脂組成物、硬化膜、積層体、硬化膜の製造方法、半導体デバイス、及び、熱塩基発生剤

Also Published As

Publication number Publication date
TW202219092A (zh) 2022-05-16
JPWO2022050278A1 (https=) 2022-03-10
WO2022050278A1 (ja) 2022-03-10
JP7612698B2 (ja) 2025-01-14
KR20230045608A (ko) 2023-04-04

Similar Documents

Publication Publication Date Title
KR102800736B1 (ko) 경화물의 제조 방법, 적층체의 제조 방법, 및, 반도체 디바이스의 제조 방법
TWI894339B (zh) 硬化性樹脂組成物、硬化物、積層體、硬化物之製造方法及半導體元件
KR102648552B1 (ko) 경화막의 제조 방법, 광경화성 수지 조성물, 적층체의 제조 방법, 및, 반도체 디바이스의 제조 방법
KR102793452B1 (ko) 경화성 수지 조성물, 경화물, 적층체, 경화물의 제조 방법, 및, 반도체 디바이스, 및, 광염기 발생제
KR102944116B1 (ko) 수지 조성물, 경화물, 적층체, 경화물의 제조 방법, 및, 반도체 디바이스
KR102848086B1 (ko) 경화물의 제조 방법, 적층체의 제조 방법, 및, 반도체 디바이스의 제조 방법
TW202219080A (zh) 硬化性樹脂組成物、硬化物、積層體、硬化物之製造方法、半導體器件、聚醯亞胺前驅物及其製造方法
KR102862032B1 (ko) 수지 조성물, 경화물, 적층체, 경화물의 제조 방법, 및, 반도체 디바이스
KR102857827B1 (ko) 수지 조성물, 경화물, 적층체, 경화물의 제조 방법, 및, 반도체 디바이스
KR102796438B1 (ko) 감광성 수지 조성물, 경화물, 적층체, 경화물의 제조 방법, 및, 반도체 디바이스
KR102827423B1 (ko) 경화물의 제조 방법, 적층체의 제조 방법, 및, 반도체 디바이스의 제조 방법
KR102836294B1 (ko) 수지 조성물, 경화물, 적층체, 경화물의 제조 방법, 및, 반도체 디바이스
KR102875352B1 (ko) 영구막의 제조 방법, 적층체의 제조 방법, 및, 반도체 디바이스의 제조 방법
KR102877409B1 (ko) 경화물의 제조 방법, 적층체의 제조 방법, 및, 반도체 디바이스의 제조 방법, 및, 처리액, 및, 수지 조성물
KR102740154B1 (ko) 경화성 수지 조성물, 경화물, 적층체, 경화물의 제조 방법, 및, 반도체 디바이스
KR102832995B1 (ko) 복합 패턴의 제조 방법, 수지 조성물, 적층체의 제조 방법, 및, 반도체 디바이스의 제조 방법
KR102812620B1 (ko) 수지 조성물, 경화물, 적층체, 경화물의 제조 방법, 및, 반도체 디바이스
KR20230044259A (ko) 경화성 수지 조성물, 경화물, 적층체, 경화물의 제조 방법, 및, 반도체 디바이스, 및, 화합물
KR20230052928A (ko) 수지 조성물, 경화물, 적층체, 경화물의 제조 방법, 및, 반도체 디바이스
WO2022065338A1 (ja) 樹脂組成物、硬化物、積層体、硬化物の製造方法、及び、半導体デバイス
KR102953362B1 (ko) 수지 조성물, 경화물, 적층체, 경화물의 제조 방법, 및, 반도체 디바이스
KR20230056034A (ko) 수지 조성물, 경화물, 적층체, 경화물의 제조 방법, 및, 반도체 디바이스
KR20230146065A (ko) 수지 조성물, 경화물, 적층체, 경화물의 제조 방법, 및, 반도체 디바이스

Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20230227

Patent event code: PA01051R01D

Comment text: International Patent Application

PA0201 Request for examination
PG1501 Laying open of application
E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20240725

Patent event code: PE09021S01D

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 20250320

PG1601 Publication of registration