KR102780436B1 - 하전 입자 광 디바이스 - Google Patents

하전 입자 광 디바이스 Download PDF

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Publication number
KR102780436B1
KR102780436B1 KR1020237023119A KR20237023119A KR102780436B1 KR 102780436 B1 KR102780436 B1 KR 102780436B1 KR 1020237023119 A KR1020237023119 A KR 1020237023119A KR 20237023119 A KR20237023119 A KR 20237023119A KR 102780436 B1 KR102780436 B1 KR 102780436B1
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KR
South Korea
Prior art keywords
charged particle
substrate
deflector
coil
beamlet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020237023119A
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English (en)
Korean (ko)
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KR20230110651A (ko
Inventor
소해일 샤투
주스트 비테벤
아론 로젠탈
요한 주스트 코닝
Original Assignee
에이에스엠엘 네델란즈 비.브이.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 에이에스엠엘 네델란즈 비.브이. filed Critical 에이에스엠엘 네델란즈 비.브이.
Publication of KR20230110651A publication Critical patent/KR20230110651A/ko
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Publication of KR102780436B1 publication Critical patent/KR102780436B1/ko
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Classifications

    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—HANDLING OF PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/08—Deviation, concentration or focusing of the beam by electric or magnetic means
    • G21K1/093—Deviation, concentration or focusing of the beam by electric or magnetic means by magnetic means
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—HANDLING OF PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/08—Deviation, concentration or focusing of the beam by electric or magnetic means
    • G21K1/087—Deviation, concentration or focusing of the beam by electric or magnetic means by electrical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
    • H01J37/1472—Deflecting along given lines
    • H01J37/1474—Scanning means
    • H01J37/1475—Scanning means magnetic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F7/00—Magnets
    • H01F7/06—Electromagnets; Actuators including electromagnets
    • H01F2007/068—Electromagnets; Actuators including electromagnets using printed circuit coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/15—Means for deflecting or directing discharge
    • H01J2237/152—Magnetic means
    • H01J2237/1526—For X-Y scanning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31774—Multi-beam

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Electron Beam Exposure (AREA)
KR1020237023119A 2013-09-06 2014-09-05 하전 입자 광 디바이스 Active KR102780436B1 (ko)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US201361874394P 2013-09-06 2013-09-06
NL2011401A NL2011401C2 (en) 2013-09-06 2013-09-06 Charged particle optical device.
NL2011401 2013-09-06
US61/874,394 2013-09-06
PCT/NL2014/050610 WO2015034362A1 (en) 2013-09-06 2014-09-05 Charged particle optical device
KR1020227002693A KR102554802B1 (ko) 2013-09-06 2014-09-05 하전 입자 광 디바이스

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020227002693A Division KR102554802B1 (ko) 2013-09-06 2014-09-05 하전 입자 광 디바이스

Publications (2)

Publication Number Publication Date
KR20230110651A KR20230110651A (ko) 2023-07-24
KR102780436B1 true KR102780436B1 (ko) 2025-03-14

Family

ID=50071680

Family Applications (3)

Application Number Title Priority Date Filing Date
KR1020237023119A Active KR102780436B1 (ko) 2013-09-06 2014-09-05 하전 입자 광 디바이스
KR1020167009093A Active KR102357144B1 (ko) 2013-09-06 2014-09-05 하전 입자 광 디바이스
KR1020227002693A Active KR102554802B1 (ko) 2013-09-06 2014-09-05 하전 입자 광 디바이스

Family Applications After (2)

Application Number Title Priority Date Filing Date
KR1020167009093A Active KR102357144B1 (ko) 2013-09-06 2014-09-05 하전 입자 광 디바이스
KR1020227002693A Active KR102554802B1 (ko) 2013-09-06 2014-09-05 하전 입자 광 디바이스

Country Status (8)

Country Link
US (1) US9111657B2 (https=)
EP (1) EP3042386B1 (https=)
JP (1) JP6469699B2 (https=)
KR (3) KR102780436B1 (https=)
CN (1) CN105765689B (https=)
NL (1) NL2011401C2 (https=)
TW (1) TWI656555B (https=)
WO (1) WO2015034362A1 (https=)

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Publication number Priority date Publication date Assignee Title
US9346127B2 (en) 2014-06-20 2016-05-24 Velo3D, Inc. Apparatuses, systems and methods for three-dimensional printing
US9662840B1 (en) 2015-11-06 2017-05-30 Velo3D, Inc. Adept three-dimensional printing
WO2017015217A2 (en) * 2015-07-20 2017-01-26 Velo3D, Inc. Transfer of particulate material
CN108883575A (zh) 2016-02-18 2018-11-23 维洛3D公司 准确的三维打印
US9981293B2 (en) * 2016-04-21 2018-05-29 Mapper Lithography Ip B.V. Method and system for the removal and/or avoidance of contamination in charged particle beam systems
JP6640040B2 (ja) * 2016-06-23 2020-02-05 株式会社ニューフレアテクノロジー 伝熱板および描画装置
US11691343B2 (en) 2016-06-29 2023-07-04 Velo3D, Inc. Three-dimensional printing and three-dimensional printers
US20180095450A1 (en) 2016-09-30 2018-04-05 Velo3D, Inc. Three-dimensional objects and their formation
US20180126461A1 (en) 2016-11-07 2018-05-10 Velo3D, Inc. Gas flow in three-dimensional printing
US20180186082A1 (en) 2017-01-05 2018-07-05 Velo3D, Inc. Optics in three-dimensional printing
US10357829B2 (en) 2017-03-02 2019-07-23 Velo3D, Inc. Three-dimensional printing of three-dimensional objects
US20180281237A1 (en) 2017-03-28 2018-10-04 Velo3D, Inc. Material manipulation in three-dimensional printing
US10272525B1 (en) 2017-12-27 2019-04-30 Velo3D, Inc. Three-dimensional printing systems and methods of their use
US10144176B1 (en) 2018-01-15 2018-12-04 Velo3D, Inc. Three-dimensional printing systems and methods of their use
US10504687B2 (en) * 2018-02-20 2019-12-10 Technische Universiteit Delft Signal separator for a multi-beam charged particle inspection apparatus
CA3148849A1 (en) 2019-07-26 2021-02-04 Velo3D, Inc. Quality assurance in formation of three-dimensional objects
WO2021190976A1 (en) 2020-03-24 2021-09-30 Asml Netherlands B.V. Stack alignment techniques
US11855463B2 (en) * 2020-12-04 2023-12-26 Spark Connected LLC Wireless power transmission to a mobile device
EP4202970A1 (en) 2021-12-24 2023-06-28 ASML Netherlands B.V. Alignment determination method and computer program

Citations (3)

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JP2003031172A (ja) * 2001-07-16 2003-01-31 Nikon Corp 偏向器とその製造方法、及び荷電粒子露光装置
US20050029473A1 (en) * 2003-08-06 2005-02-10 Canon Kabushiki Kaisha Charged particle beam exposure method and apparatus and device manufacturing method using the apparatus
JP2010113843A (ja) * 2008-11-04 2010-05-20 Shimadzu Corp 荷電粒子ビーム装置及びその対物レンズのコンタミネーション防止装置

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JPH03176955A (ja) * 1989-12-05 1991-07-31 Jeol Ltd 走査形電子ビーム装置
JPH04179116A (ja) * 1990-11-09 1992-06-25 Hitachi Ltd 荷電粒子線装置
JP3774953B2 (ja) * 1995-10-19 2006-05-17 株式会社日立製作所 走査形電子顕微鏡
JP3938966B2 (ja) * 1997-02-13 2007-06-27 富士通株式会社 荷電粒子ビーム露光方法及びその露光装置
US6153885A (en) * 1999-06-03 2000-11-28 Nikon Corporation Toroidal charged particle deflector with high mechanical stability and accuracy
US7235799B2 (en) * 2003-11-28 2007-06-26 Ebara Corporation System and method for evaluation using electron beam and manufacture of devices
US8003952B2 (en) * 2006-09-12 2011-08-23 Agilent Technologies, Inc. Integrated deflectors for beam alignment and blanking in charged particle columns
JP2012504309A (ja) * 2008-09-30 2012-02-16 カール ツァイス エヌティーエス エルエルシー 荷電粒子ビームの位置合わせ
NL1036912C2 (en) * 2009-04-29 2010-11-01 Mapper Lithography Ip Bv Charged particle optical system comprising an electrostatic deflector.
US8138484B2 (en) * 2010-04-28 2012-03-20 Axcelis Technologies Inc. Magnetic scanning system with improved efficiency
JP5253532B2 (ja) * 2011-03-01 2013-07-31 キヤノン株式会社 偏向器アレイ、偏向器アレイの製造方法、描画装置、および物品の製造方法
NL2007392C2 (en) 2011-09-12 2013-03-13 Mapper Lithography Ip Bv Assembly for providing an aligned stack of two or more modules and a lithography system or a microscopy system comprising such an assembly.
NL2006868C2 (en) * 2011-05-30 2012-12-03 Mapper Lithography Ip Bv Charged particle multi-beamlet apparatus.

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003031172A (ja) * 2001-07-16 2003-01-31 Nikon Corp 偏向器とその製造方法、及び荷電粒子露光装置
US20050029473A1 (en) * 2003-08-06 2005-02-10 Canon Kabushiki Kaisha Charged particle beam exposure method and apparatus and device manufacturing method using the apparatus
JP2010113843A (ja) * 2008-11-04 2010-05-20 Shimadzu Corp 荷電粒子ビーム装置及びその対物レンズのコンタミネーション防止装置

Also Published As

Publication number Publication date
US9111657B2 (en) 2015-08-18
CN105765689B (zh) 2018-05-18
KR102357144B1 (ko) 2022-01-28
JP6469699B2 (ja) 2019-02-13
KR20230110651A (ko) 2023-07-24
NL2011401C2 (en) 2015-03-09
KR20220018072A (ko) 2022-02-14
EP3042386B1 (en) 2017-07-19
US20150069259A1 (en) 2015-03-12
CN105765689A (zh) 2016-07-13
EP3042386A1 (en) 2016-07-13
KR20160051894A (ko) 2016-05-11
TWI656555B (zh) 2019-04-11
TW201532103A (zh) 2015-08-16
JP2016529684A (ja) 2016-09-23
WO2015034362A1 (en) 2015-03-12
KR102554802B1 (ko) 2023-07-13

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