KR102780234B1 - 화상 처리 방법, 형상 검사 방법, 화상 처리 시스템 및 형상 검사 시스템 - Google Patents

화상 처리 방법, 형상 검사 방법, 화상 처리 시스템 및 형상 검사 시스템 Download PDF

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KR102780234B1
KR102780234B1 KR1020227041722A KR20227041722A KR102780234B1 KR 102780234 B1 KR102780234 B1 KR 102780234B1 KR 1020227041722 A KR1020227041722 A KR 1020227041722A KR 20227041722 A KR20227041722 A KR 20227041722A KR 102780234 B1 KR102780234 B1 KR 102780234B1
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마사노리 오우치
마사요시 이시카와
야스타카 도요다
히로유키 신도
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주식회사 히타치하이테크
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    • G06V10/00—Arrangements for image or video recognition or understanding
    • G06V10/70—Arrangements for image or video recognition or understanding using pattern recognition or machine learning
    • G06V10/74—Image or video pattern matching; Proximity measures in feature spaces
    • G06V10/75—Organisation of the matching processes, e.g. simultaneous or sequential comparisons of image or video features; Coarse-fine approaches, e.g. multi-scale approaches; using context analysis; Selection of dictionaries
    • G06V10/751—Comparing pixel values or logical combinations thereof, or feature values having positional relevance, e.g. template matching
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
    • G01N23/2251—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident electron beams, e.g. scanning electron microscopy [SEM]
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    • G06V10/443—Local feature extraction by analysis of parts of the pattern, e.g. by detecting edges, contours, loops, corners, strokes or intersections; Connectivity analysis, e.g. of connected components by matching or filtering
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    • G06V10/761—Proximity, similarity or dissimilarity measures
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    • G06V10/70—Arrangements for image or video recognition or understanding using pattern recognition or machine learning
    • G06V10/77—Processing image or video features in feature spaces; using data integration or data reduction, e.g. principal component analysis [PCA] or independent component analysis [ICA] or self-organising maps [SOM]; Blind source separation
    • G06V10/772—Determining representative reference patterns, e.g. averaging or distorting patterns; Generating dictionaries
    • G—PHYSICS
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    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
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    • G01N2223/40—Imaging
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    • G01N2223/40—Imaging
    • G01N2223/418—Imaging electron microscope
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/60—Specific applications or type of materials
    • G01N2223/611—Specific applications or type of materials patterned objects; electronic devices
    • G01N2223/6116—Specific applications or type of materials patterned objects; electronic devices semiconductor wafer
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    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/60—Specific applications or type of materials
    • G01N2223/646—Specific applications or type of materials flaws, defects
    • G01N2223/6462—Specific applications or type of materials flaws, defects microdefects
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    • G06T2207/10—Image acquisition modality
    • G06T2207/10056—Microscopic image
    • G06T2207/10061—Microscopic image from scanning electron microscope
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/20—Special algorithmic details
    • G06T2207/20084—Artificial neural networks [ANN]
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/30—Subject of image; Context of image processing
    • G06T2207/30108—Industrial image inspection
    • G06T2207/30148—Semiconductor; IC; Wafer
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
    • G06V10/00—Arrangements for image or video recognition or understanding
    • G06V10/40—Extraction of image or video features
    • G06V10/44—Local feature extraction by analysis of parts of the pattern, e.g. by detecting edges, contours, loops, corners, strokes or intersections; Connectivity analysis, e.g. of connected components
    • G06V10/443—Local feature extraction by analysis of parts of the pattern, e.g. by detecting edges, contours, loops, corners, strokes or intersections; Connectivity analysis, e.g. of connected components by matching or filtering
    • G06V10/449—Biologically inspired filters, e.g. difference of Gaussians [DoG] or Gabor filters
    • G06V10/451—Biologically inspired filters, e.g. difference of Gaussians [DoG] or Gabor filters with interaction between the filter responses, e.g. cortical complex cells
    • G06V10/454—Integrating the filters into a hierarchical structure, e.g. convolutional neural networks [CNN]

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  • Analysing Materials By The Use Of Radiation (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
KR1020227041722A 2020-06-16 2020-06-16 화상 처리 방법, 형상 검사 방법, 화상 처리 시스템 및 형상 검사 시스템 Active KR102780234B1 (ko)

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US (1) US20230222764A1 (https=)
JP (1) JP7390486B2 (https=)
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CN (1) CN115698690A (https=)
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WO2023127081A1 (ja) * 2021-12-28 2023-07-06 株式会社日立ハイテク 画像検査装置、画像処理方法
CN115242982B (zh) * 2022-07-28 2023-09-22 业成科技（成都）有限公司 镜头调焦方法及其系统
JP2024108492A (ja) * 2023-01-31 2024-08-13 東京エレクトロン株式会社 堆積判定方法及び基板処理装置
KR20250143803A (ko) 2023-06-21 2025-10-02 주식회사 히타치하이테크 화상 검사 장치 및 화상 처리 방법
WO2026047363A1 (en) * 2024-08-30 2026-03-05 Applied Materials Inc Self-operating substrate measurement

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JP7390486B2 (ja) 2023-12-01
KR20230004819A (ko) 2023-01-06
WO2021255819A1 (ja) 2021-12-23
CN115698690A (zh) 2023-02-03
JPWO2021255819A1 (https=) 2021-12-23
TWI777612B (zh) 2022-09-11
US20230222764A1 (en) 2023-07-13
TW202201347A (zh) 2022-01-01

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