KR102679358B1 - 플라즈마 처리 장치 및 플라즈마 처리 방법 - Google Patents

플라즈마 처리 장치 및 플라즈마 처리 방법 Download PDF

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Publication number
KR102679358B1
KR102679358B1 KR1020190039562A KR20190039562A KR102679358B1 KR 102679358 B1 KR102679358 B1 KR 102679358B1 KR 1020190039562 A KR1020190039562 A KR 1020190039562A KR 20190039562 A KR20190039562 A KR 20190039562A KR 102679358 B1 KR102679358 B1 KR 102679358B1
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South Korea
Prior art keywords
electrostatic chuck
plasma processing
heat transfer
voltage
temperature
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KR1020190039562A
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English (en)
Korean (ko)
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KR20190117378A (ko
Inventor
치시오 고시미즈
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도쿄엘렉트론가부시키가이샤
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H01L21/6833—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/002—Cooling arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24571—Measurements of non-electric or non-magnetic variables
    • H01J2237/24585—Other variables, e.g. energy, mass, velocity, time, temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
KR1020190039562A 2018-04-06 2019-04-04 플라즈마 처리 장치 및 플라즈마 처리 방법 Active KR102679358B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2018-073872 2018-04-06
JP2018073872A JP7054642B2 (ja) 2018-04-06 2018-04-06 プラズマ処理装置及びプラズマ処理方法

Publications (2)

Publication Number Publication Date
KR20190117378A KR20190117378A (ko) 2019-10-16
KR102679358B1 true KR102679358B1 (ko) 2024-06-27

Family

ID=68096120

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020190039562A Active KR102679358B1 (ko) 2018-04-06 2019-04-04 플라즈마 처리 장치 및 플라즈마 처리 방법

Country Status (3)

Country Link
US (2) US11875977B2 (https=)
JP (1) JP7054642B2 (https=)
KR (1) KR102679358B1 (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7519768B2 (ja) * 2019-10-28 2024-07-22 東京エレクトロン株式会社 吸着方法、載置台及びプラズマ処理装置
US11270903B2 (en) * 2019-12-17 2022-03-08 Applied Materials, Inc. Multi zone electrostatic chuck
CN113130279B (zh) * 2019-12-30 2023-09-29 中微半导体设备(上海)股份有限公司 下电极组件、等离子体处理装置及其工作方法
JP7516198B2 (ja) * 2020-05-01 2024-07-16 東京エレクトロン株式会社 エッチング装置及びエッチング方法
CN112466732B (zh) * 2020-11-25 2024-06-21 北京北方华创微电子装备有限公司 半导体工艺设备和等离子体启辉方法
JP7588518B2 (ja) * 2021-02-01 2024-11-22 東京エレクトロン株式会社 温度制御方法及び基板処理装置
US12062565B2 (en) * 2021-06-29 2024-08-13 Asm Ip Holding B.V. Electrostatic chuck, assembly including the electrostatic chuck, and method of controlling temperature of the electrostatic chuck
CN115036202B (zh) * 2022-06-29 2025-08-26 北京北方华创微电子装备有限公司 一种下射频电源的电压控制方法及半导体工艺设备

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040188021A1 (en) 2003-03-27 2004-09-30 Tokyo Electron Limited Method and system for monitoring RF impedance to determine conditions of a wafer on an electrostatic chuck
JP2010010236A (ja) 2008-06-25 2010-01-14 Hitachi High-Technologies Corp プラズマ処理装置及びプラズマ処理方法
US20140231389A1 (en) * 2013-02-20 2014-08-21 Tokyo Electron Limited Plasma processing apparatus and plasma processing method

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JPH07263412A (ja) * 1994-03-18 1995-10-13 Hitachi Ltd プラズマ処理装置
JP3733448B2 (ja) * 1994-04-27 2006-01-11 キヤノンアネルバ株式会社 プラズマ処理方法および装置並びに基板脱離方法及び印加電圧の制御装置
JP3208044B2 (ja) * 1995-06-07 2001-09-10 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JPH1014266A (ja) * 1996-06-21 1998-01-16 Sony Corp 静電チャック装置及び静電チャックを用いたウエハの保持方法及び静電チャックからのウエハの脱着方法
JPH1027780A (ja) * 1996-07-10 1998-01-27 Nec Corp プラズマ処理方法
JP3792865B2 (ja) * 1997-10-30 2006-07-05 松下電器産業株式会社 半導体装置の製造装置およびドライエッチング方法
JP2000049216A (ja) * 1998-07-28 2000-02-18 Mitsubishi Electric Corp プラズマ処理装置および当該装置で用いられる静電チャック吸着方法
JP2001308065A (ja) * 2000-04-19 2001-11-02 Nec Corp ドライエッチング装置およびドライエッチング方法
WO2003019618A2 (en) * 2001-08-27 2003-03-06 Matsushita Electric Industrial Co., Ltd. Plasma treating apparatus and plasma treating method
JP4657949B2 (ja) * 2006-03-01 2011-03-23 株式会社日立ハイテクノロジーズ エッチング処理装置および自己バイアス電圧測定方法ならびにエッチング処理装置の監視方法
JP4815298B2 (ja) * 2006-07-31 2011-11-16 株式会社日立ハイテクノロジーズ プラズマ処理方法
US8313664B2 (en) * 2008-11-21 2012-11-20 Applied Materials, Inc. Efficient and accurate method for real-time prediction of the self-bias voltage of a wafer and feedback control of ESC voltage in plasma processing chamber
JP5486970B2 (ja) * 2010-03-17 2014-05-07 東京エレクトロン株式会社 基板脱着方法及び基板処理装置
JP5975755B2 (ja) * 2012-06-28 2016-08-23 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
US20170278730A1 (en) * 2016-03-28 2017-09-28 Hitachi High-Technologies Corporation Plasma processing apparatus and plasma processing method

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040188021A1 (en) 2003-03-27 2004-09-30 Tokyo Electron Limited Method and system for monitoring RF impedance to determine conditions of a wafer on an electrostatic chuck
JP2010010236A (ja) 2008-06-25 2010-01-14 Hitachi High-Technologies Corp プラズマ処理装置及びプラズマ処理方法
US20140231389A1 (en) * 2013-02-20 2014-08-21 Tokyo Electron Limited Plasma processing apparatus and plasma processing method

Also Published As

Publication number Publication date
JP7054642B2 (ja) 2022-04-14
US20190311888A1 (en) 2019-10-10
KR20190117378A (ko) 2019-10-16
US20240112895A1 (en) 2024-04-04
US11875977B2 (en) 2024-01-16
JP2019186334A (ja) 2019-10-24

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