KR102671517B1 - 성막 시뮬레이션 방법, 프로그램 및 반도체 가공 시스템 - Google Patents

성막 시뮬레이션 방법, 프로그램 및 반도체 가공 시스템 Download PDF

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KR102671517B1
KR102671517B1 KR1020187017536A KR20187017536A KR102671517B1 KR 102671517 B1 KR102671517 B1 KR 102671517B1 KR 1020187017536 A KR1020187017536 A KR 1020187017536A KR 20187017536 A KR20187017536 A KR 20187017536A KR 102671517 B1 KR102671517 B1 KR 102671517B1
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film
raw material
film formation
material particles
calculation unit
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KR20180102551A (ko
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노부유키 쿠보이
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소니그룹주식회사
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    • H01L21/31—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
    • G06F30/20—Design optimisation, verification or simulation
    • H01L21/67242—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Evolutionary Computation (AREA)
  • Geometry (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)
KR1020187017536A 2016-01-13 2016-10-19 성막 시뮬레이션 방법, 프로그램 및 반도체 가공 시스템 Active KR102671517B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2016004259A JP6693133B2 (ja) 2016-01-13 2016-01-13 成膜シミュレーション方法、プログラム、および半導体加工システム
JPJP-P-2016-004259 2016-01-13
PCT/JP2016/080993 WO2017122404A1 (ja) 2016-01-13 2016-10-19 成膜シミュレーション方法、プログラム、および半導体加工システム

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KR20180102551A KR20180102551A (ko) 2018-09-17
KR102671517B1 true KR102671517B1 (ko) 2024-06-04

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US (1) US10929579B2 (enExample)
JP (1) JP6693133B2 (enExample)
KR (1) KR102671517B1 (enExample)
WO (1) WO2017122404A1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12557601B2 (en) 2019-05-07 2026-02-17 Sony Semiconductor Solutions Corporation Defect density calculation method, defect-density calculation program, defect-density calculation apparatus, heat treatment control system and machining control system
JP2023180839A (ja) * 2022-06-10 2023-12-21 ソニーセミコンダクタソリューションズ株式会社 成膜シミュレーション方法、成膜シミュレーションプログラム、成膜シミュレータおよび成膜装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000195766A (ja) * 1998-12-25 2000-07-14 Toshiba Corp シミュレ―ション装置、シミュレ―ション方法、シミュレ―ションプログラムを格納した記録媒体および固体電子装置の製造方法
US20100243431A1 (en) 2009-03-30 2010-09-30 Sony Corporation Ion radiation damage prediction method, ion radiation damage simulator, ion radiation apparatus and ion radiation method

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2658840B2 (ja) * 1993-12-01 1997-09-30 日本電気株式会社 プロセスシミュレータおよびこれを用いたｃｖｄ装置およびプロセスシミュレーション方法
JP4928694B2 (ja) * 2001-09-18 2012-05-09 三菱重工業株式会社 薄膜多結晶の膜構造同定方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000195766A (ja) * 1998-12-25 2000-07-14 Toshiba Corp シミュレ―ション装置、シミュレ―ション方法、シミュレ―ションプログラムを格納した記録媒体および固体電子装置の製造方法
US20100243431A1 (en) 2009-03-30 2010-09-30 Sony Corporation Ion radiation damage prediction method, ion radiation damage simulator, ion radiation apparatus and ion radiation method

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
Island migration caused by the motion of the atoms at the border... Alexander Bogicevic 등, The American Physical Society, PHYSICAL REVIEW B, Vol. 57, No. 16, 15 APRIL 1998. 페이지 R9459-R9462*
Multilayer growth of BaTiO3 thin films via pulsed laser deposition: An energy-dependent kinetic Monte Carlo simulation, Z. Zhu 등, Applied Surface Science 256 (2010), 페이지 5876-5881*

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KR20180102551A (ko) 2018-09-17
JP6693133B2 (ja) 2020-05-13
US20190005170A1 (en) 2019-01-03
JP2017126632A (ja) 2017-07-20
US10929579B2 (en) 2021-02-23
WO2017122404A1 (ja) 2017-07-20

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