KR102647518B1 - 강도의 변화에 기초하여 물체를 선택가능하게 보유 및 해제하는 전사 요소 - Google Patents
강도의 변화에 기초하여 물체를 선택가능하게 보유 및 해제하는 전사 요소 Download PDFInfo
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- KR102647518B1 KR102647518B1 KR1020200143236A KR20200143236A KR102647518B1 KR 102647518 B1 KR102647518 B1 KR 102647518B1 KR 1020200143236 A KR1020200143236 A KR 1020200143236A KR 20200143236 A KR20200143236 A KR 20200143236A KR 102647518 B1 KR102647518 B1 KR 102647518B1
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- H01L21/67144—
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- H—ELECTRICITY
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- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
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- H—ELECTRICITY
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- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
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- H01L21/67103—
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- H01L21/6835—
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- H01L33/20—
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- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/0019—Circuit arrangements
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
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- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
- H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
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- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
- H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
- H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
- H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
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- H—ELECTRICITY
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- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0431—Apparatus for thermal treatment
- H10P72/0432—Apparatus for thermal treatment mainly by conduction
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- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0446—Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
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- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
- H10P72/32—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations between different workstations
- H10P72/3202—Mechanical details, e.g. rollers or belts
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
- H10P72/32—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations between different workstations
- H10P72/3212—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations between different workstations the substrates to be conveyed not being semiconductor wafers or large planar substrates, e.g. chips or lead frames
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
- H10P72/32—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations between different workstations
- H10P72/3218—Conveying cassettes, containers or carriers
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- H—ELECTRICITY
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- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
- H10P72/34—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
- H10P72/3402—Mechanical parts of transfer devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
- H10P72/34—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
- H10P72/3411—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving loading and unloading of wafers
- H10P72/3412—Batch transfer of wafers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
- H10P72/7412—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support the auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/78—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using vacuum or suction, e.g. Bernoulli chucks
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
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- H01L2221/68318—
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- H01L2221/68381—
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/036—Manufacture or treatment of packages
- H10H20/0364—Manufacture or treatment of packages of interconnections
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
- H10P72/7412—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support the auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
- H10P72/7414—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support the auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support the auxiliary support including means facilitating the selective separation of some of a plurality of devices from the auxiliary support
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
- H10P72/7428—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used to support diced chips prior to mounting
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
- H10P72/7432—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
- H10P72/7434—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
- H10P72/744—Details of chemical or physical process used for separating the auxiliary support from a device or a wafer
Landscapes
- Micromachines (AREA)
- Die Bonding (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US16/681,215 US11302561B2 (en) | 2019-11-12 | 2019-11-12 | Transfer elements that selectably hold and release objects based on changes in stiffness |
| US16/681,215 | 2019-11-12 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20210057667A KR20210057667A (ko) | 2021-05-21 |
| KR102647518B1 true KR102647518B1 (ko) | 2024-03-15 |
Family
ID=73039945
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020200143236A Active KR102647518B1 (ko) | 2019-11-12 | 2020-10-30 | 강도의 변화에 기초하여 물체를 선택가능하게 보유 및 해제하는 전사 요소 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US11302561B2 (https=) |
| EP (1) | EP3823011B1 (https=) |
| JP (1) | JP7519267B2 (https=) |
| KR (1) | KR102647518B1 (https=) |
| CN (1) | CN112864046B (https=) |
| TW (1) | TWI845786B (https=) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114141716A (zh) * | 2021-11-24 | 2022-03-04 | Tcl华星光电技术有限公司 | 显示面板的制备方法、显示面板及电子设备 |
| US20240170442A1 (en) * | 2022-11-18 | 2024-05-23 | Asmpt Singapore Pte. Ltd. | Hybrid bonding of a thin semiconductor die |
| CN117096085A (zh) * | 2023-01-17 | 2023-11-21 | 天马新型显示技术研究院(厦门)有限公司 | 转运基板及转运方法、显示面板 |
| KR20240123681A (ko) | 2023-02-07 | 2024-08-14 | 포항공과대학교 산학협력단 | 형상기억폴리머를 포함하는 마이크로 스탬프를 이용한 마이크로 잉크를 전사하는 방법 |
| KR20240139185A (ko) * | 2023-03-13 | 2024-09-23 | 한국기계연구원 | 고속 전사공정용 전사필름 및 이를 이용한 전사방법 |
| KR102788937B1 (ko) | 2023-11-07 | 2025-03-31 | 포항공과대학교 산학협력단 | 형상기억고분자 나노 팁 기반의 마이크로 잉크의 전사 방법 |
| KR102919872B1 (ko) | 2024-01-11 | 2026-01-28 | 포항공과대학교 산학협력단 | 빛을 이용한 전사 장치 및 이를 이용한 전사 방법 |
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| US20160219702A1 (en) | 2015-01-23 | 2016-07-28 | Gholamreza Chaji | Selective micro device transfer to receiver substrate |
| US20180294387A1 (en) | 2017-04-10 | 2018-10-11 | PlayNitride Inc. | Method of transferring micro devices |
| US20190139794A1 (en) | 2017-11-08 | 2019-05-09 | Facebook Technologies, Llc | Vacuum pick-up head for semiconductor chips |
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| JP2001088454A (ja) | 1999-09-27 | 2001-04-03 | Kuramoto Sangyo:Kk | 熱転写表示体および転写像形成方法 |
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- 2020-10-27 CN CN202011167810.8A patent/CN112864046B/zh active Active
- 2020-10-28 TW TW109137391A patent/TWI845786B/zh active
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- 2020-10-30 KR KR1020200143236A patent/KR102647518B1/ko active Active
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| Publication number | Publication date |
|---|---|
| US11302561B2 (en) | 2022-04-12 |
| EP3823011A1 (en) | 2021-05-19 |
| JP7519267B2 (ja) | 2024-07-19 |
| CN112864046B (zh) | 2024-01-12 |
| KR20210057667A (ko) | 2021-05-21 |
| JP2021077877A (ja) | 2021-05-20 |
| TW202119574A (zh) | 2021-05-16 |
| TWI845786B (zh) | 2024-06-21 |
| EP3823011B1 (en) | 2023-07-05 |
| CN112864046A (zh) | 2021-05-28 |
| US20210143045A1 (en) | 2021-05-13 |
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