KR102647149B1 - Backgrind tape - Google Patents
Backgrind tape Download PDFInfo
- Publication number
- KR102647149B1 KR102647149B1 KR1020190094143A KR20190094143A KR102647149B1 KR 102647149 B1 KR102647149 B1 KR 102647149B1 KR 1020190094143 A KR1020190094143 A KR 1020190094143A KR 20190094143 A KR20190094143 A KR 20190094143A KR 102647149 B1 KR102647149 B1 KR 102647149B1
- Authority
- KR
- South Korea
- Prior art keywords
- weight
- meth
- parts
- acrylate
- intermediate layer
- Prior art date
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- 239000010410 layer Substances 0.000 claims abstract description 78
- 239000000853 adhesive Substances 0.000 claims abstract description 54
- 230000001070 adhesive effect Effects 0.000 claims abstract description 54
- 239000012790 adhesive layer Substances 0.000 claims abstract description 35
- 239000004925 Acrylic resin Substances 0.000 claims abstract description 25
- 229920000178 Acrylic resin Polymers 0.000 claims abstract description 25
- 239000000463 material Substances 0.000 claims abstract description 22
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims description 47
- -1 polyethylene terephthalate Polymers 0.000 claims description 42
- 239000000178 monomer Substances 0.000 claims description 35
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 14
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 14
- 239000004065 semiconductor Substances 0.000 claims description 14
- 229920005672 polyolefin resin Polymers 0.000 claims description 6
- 238000000227 grinding Methods 0.000 claims description 4
- 235000012431 wafers Nutrition 0.000 claims 2
- 238000000034 method Methods 0.000 abstract description 22
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 64
- 239000003431 cross linking reagent Substances 0.000 description 29
- 239000000203 mixture Substances 0.000 description 28
- 238000002360 preparation method Methods 0.000 description 19
- 239000000654 additive Substances 0.000 description 16
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 15
- 238000011156 evaluation Methods 0.000 description 14
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- OZAIFHULBGXAKX-UHFFFAOYSA-N 2-(2-cyanopropan-2-yldiazenyl)-2-methylpropanenitrile Chemical compound N#CC(C)(C)N=NC(C)(C)C#N OZAIFHULBGXAKX-UHFFFAOYSA-N 0.000 description 10
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 10
- 150000001875 compounds Chemical class 0.000 description 10
- 239000003999 initiator Substances 0.000 description 10
- 239000012948 isocyanate Substances 0.000 description 10
- 238000005259 measurement Methods 0.000 description 10
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- 238000007373 indentation Methods 0.000 description 8
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- 238000006116 polymerization reaction Methods 0.000 description 8
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 7
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- 230000000996 additive effect Effects 0.000 description 6
- 238000002156 mixing Methods 0.000 description 6
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- 238000000576 coating method Methods 0.000 description 5
- 239000012299 nitrogen atmosphere Substances 0.000 description 5
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- 239000004696 Poly ether ether ketone Substances 0.000 description 4
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- XXROGKLTLUQVRX-UHFFFAOYSA-N allyl alcohol Chemical compound OCC=C XXROGKLTLUQVRX-UHFFFAOYSA-N 0.000 description 4
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- 125000002704 decyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 4
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- XLPJNCYCZORXHG-UHFFFAOYSA-N 1-morpholin-4-ylprop-2-en-1-one Chemical compound C=CC(=O)N1CCOCC1 XLPJNCYCZORXHG-UHFFFAOYSA-N 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 3
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 3
- 239000005977 Ethylene Substances 0.000 description 3
- 239000005057 Hexamethylene diisocyanate Substances 0.000 description 3
- 239000004721 Polyphenylene oxide Substances 0.000 description 3
- 239000004820 Pressure-sensitive adhesive Substances 0.000 description 3
- ZJCCRDAZUWHFQH-UHFFFAOYSA-N Trimethylolpropane Chemical compound CCC(CO)(CO)CO ZJCCRDAZUWHFQH-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000004132 cross linking Methods 0.000 description 3
- RRAMGCGOFNQTLD-UHFFFAOYSA-N hexamethylene diisocyanate Chemical compound O=C=NCCCCCCN=C=O RRAMGCGOFNQTLD-UHFFFAOYSA-N 0.000 description 3
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- 238000012360 testing method Methods 0.000 description 3
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- DVKJHBMWWAPEIU-UHFFFAOYSA-N toluene 2,4-diisocyanate Chemical compound CC1=CC=C(N=C=O)C=C1N=C=O DVKJHBMWWAPEIU-UHFFFAOYSA-N 0.000 description 3
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- ZGEGCLOFRBLKSE-UHFFFAOYSA-N 1-Heptene Chemical compound CCCCCC=C ZGEGCLOFRBLKSE-UHFFFAOYSA-N 0.000 description 2
- AFFLGGQVNFXPEV-UHFFFAOYSA-N 1-decene Chemical compound CCCCCCCCC=C AFFLGGQVNFXPEV-UHFFFAOYSA-N 0.000 description 2
- CRSBERNSMYQZNG-UHFFFAOYSA-N 1-dodecene Chemical compound CCCCCCCCCCC=C CRSBERNSMYQZNG-UHFFFAOYSA-N 0.000 description 2
- HXQKJEIGFRLGIH-UHFFFAOYSA-N 1-ethenyl-2h-pyrazine Chemical compound C=CN1CC=NC=C1 HXQKJEIGFRLGIH-UHFFFAOYSA-N 0.000 description 2
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- OSSNTDFYBPYIEC-UHFFFAOYSA-N 1-ethenylimidazole Chemical compound C=CN1C=CN=C1 OSSNTDFYBPYIEC-UHFFFAOYSA-N 0.000 description 2
- PBGPBHYPCGDFEZ-UHFFFAOYSA-N 1-ethenylpiperidin-2-one Chemical compound C=CN1CCCCC1=O PBGPBHYPCGDFEZ-UHFFFAOYSA-N 0.000 description 2
- CTXUTPWZJZHRJC-UHFFFAOYSA-N 1-ethenylpyrrole Chemical compound C=CN1C=CC=C1 CTXUTPWZJZHRJC-UHFFFAOYSA-N 0.000 description 2
- GQEZCXVZFLOKMC-UHFFFAOYSA-N 1-hexadecene Chemical compound CCCCCCCCCCCCCCC=C GQEZCXVZFLOKMC-UHFFFAOYSA-N 0.000 description 2
- LIKMAJRDDDTEIG-UHFFFAOYSA-N 1-hexene Chemical compound CCCCC=C LIKMAJRDDDTEIG-UHFFFAOYSA-N 0.000 description 2
- KWKAKUADMBZCLK-UHFFFAOYSA-N 1-octene Chemical compound CCCCCCC=C KWKAKUADMBZCLK-UHFFFAOYSA-N 0.000 description 2
- BFYSJBXFEVRVII-UHFFFAOYSA-N 1-prop-1-enylpyrrolidin-2-one Chemical compound CC=CN1CCCC1=O BFYSJBXFEVRVII-UHFFFAOYSA-N 0.000 description 2
- HFDVRLIODXPAHB-UHFFFAOYSA-N 1-tetradecene Chemical compound CCCCCCCCCCCCC=C HFDVRLIODXPAHB-UHFFFAOYSA-N 0.000 description 2
- WULAHPYSGCVQHM-UHFFFAOYSA-N 2-(2-ethenoxyethoxy)ethanol Chemical compound OCCOCCOC=C WULAHPYSGCVQHM-UHFFFAOYSA-N 0.000 description 2
- JAHNSTQSQJOJLO-UHFFFAOYSA-N 2-(3-fluorophenyl)-1h-imidazole Chemical compound FC1=CC=CC(C=2NC=CN=2)=C1 JAHNSTQSQJOJLO-UHFFFAOYSA-N 0.000 description 2
- 125000000022 2-aminoethyl group Chemical group [H]C([*])([H])C([H])([H])N([H])[H] 0.000 description 2
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- 125000000954 2-hydroxyethyl group Chemical group [H]C([*])([H])C([H])([H])O[H] 0.000 description 2
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- NIAXWFTYAJQENP-UHFFFAOYSA-N 3-ethenyl-2h-1,3-oxazole Chemical compound C=CN1COC=C1 NIAXWFTYAJQENP-UHFFFAOYSA-N 0.000 description 2
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- HRPVXLWXLXDGHG-UHFFFAOYSA-N Acrylamide Chemical compound NC(=O)C=C HRPVXLWXLXDGHG-UHFFFAOYSA-N 0.000 description 2
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- 241001050985 Disco Species 0.000 description 2
- SNRUBQQJIBEYMU-UHFFFAOYSA-N Dodecane Natural products CCCCCCCCCCCC SNRUBQQJIBEYMU-UHFFFAOYSA-N 0.000 description 2
- IMROMDMJAWUWLK-UHFFFAOYSA-N Ethenol Chemical compound OC=C IMROMDMJAWUWLK-UHFFFAOYSA-N 0.000 description 2
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- VQTUBCCKSQIDNK-UHFFFAOYSA-N Isobutene Chemical compound CC(C)=C VQTUBCCKSQIDNK-UHFFFAOYSA-N 0.000 description 2
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- RMKZLFMHXZAGTM-UHFFFAOYSA-N [dimethoxy(propyl)silyl]oxymethyl prop-2-enoate Chemical compound CCC[Si](OC)(OC)OCOC(=O)C=C RMKZLFMHXZAGTM-UHFFFAOYSA-N 0.000 description 2
- 239000006096 absorbing agent Substances 0.000 description 2
- 150000001252 acrylic acid derivatives Chemical class 0.000 description 2
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- 125000001204 arachidyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 description 2
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- 238000001035 drying Methods 0.000 description 2
- ZEYMDLYHRCTNEE-UHFFFAOYSA-N ethenyl 3-oxobutanoate Chemical compound CC(=O)CC(=O)OC=C ZEYMDLYHRCTNEE-UHFFFAOYSA-N 0.000 description 2
- 150000002170 ethers Chemical class 0.000 description 2
- 239000003063 flame retardant Substances 0.000 description 2
- PBZROIMXDZTJDF-UHFFFAOYSA-N hepta-1,6-dien-4-one Chemical compound C=CCC(=O)CC=C PBZROIMXDZTJDF-UHFFFAOYSA-N 0.000 description 2
- 125000003187 heptyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- VAMFXQBUQXONLZ-UHFFFAOYSA-N icos-1-ene Chemical compound CCCCCCCCCCCCCCCCCCC=C VAMFXQBUQXONLZ-UHFFFAOYSA-N 0.000 description 2
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 2
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- 125000001972 isopentyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])C([H])([H])* 0.000 description 2
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- 125000002960 margaryl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 238000000691 measurement method Methods 0.000 description 2
- RBQRWNWVPQDTJJ-UHFFFAOYSA-N methacryloyloxyethyl isocyanate Chemical compound CC(=C)C(=O)OCCN=C=O RBQRWNWVPQDTJJ-UHFFFAOYSA-N 0.000 description 2
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- 239000000376 reactant Substances 0.000 description 2
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- 125000004079 stearyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
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- 125000002889 tridecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
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- 229920000877 Melamine resin Polymers 0.000 description 1
- BWPYBAJTDILQPY-UHFFFAOYSA-N Methoxyphenone Chemical compound C1=C(C)C(OC)=CC=C1C(=O)C1=CC=CC(C)=C1 BWPYBAJTDILQPY-UHFFFAOYSA-N 0.000 description 1
- AXXJZJDSKPSPGI-UHFFFAOYSA-N O=c1c2ccccc2sc2ccccc12.CCc1cc(CC)c2sc3ccccc3c(=O)c2c1 Chemical compound O=c1c2ccccc2sc2ccccc12.CCc1cc(CC)c2sc3ccccc3c(=O)c2c1 AXXJZJDSKPSPGI-UHFFFAOYSA-N 0.000 description 1
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- 125000003700 epoxy group Chemical group 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
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- 125000003055 glycidyl group Chemical group C(C1CO1)* 0.000 description 1
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- ZFSLODLOARCGLH-UHFFFAOYSA-N isocyanuric acid Chemical group OC1=NC(O)=NC(O)=N1 ZFSLODLOARCGLH-UHFFFAOYSA-N 0.000 description 1
- NIMLQBUJDJZYEJ-UHFFFAOYSA-N isophorone diisocyanate Chemical compound CC1(C)CC(N=C=O)CC(C)(CN=C=O)C1 NIMLQBUJDJZYEJ-UHFFFAOYSA-N 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
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- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 1
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- JDSHMPZPIAZGSV-UHFFFAOYSA-N melamine Chemical compound NC1=NC(N)=NC(N)=N1 JDSHMPZPIAZGSV-UHFFFAOYSA-N 0.000 description 1
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- 230000003287 optical effect Effects 0.000 description 1
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- 150000002978 peroxides Chemical class 0.000 description 1
- 239000005056 polyisocyanate Substances 0.000 description 1
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- 230000000379 polymerizing effect Effects 0.000 description 1
- 229920005862 polyol Polymers 0.000 description 1
- 150000003077 polyols Chemical class 0.000 description 1
- 229920005673 polypropylene based resin Polymers 0.000 description 1
- 229920000909 polytetrahydrofuran Polymers 0.000 description 1
- 229920001289 polyvinyl ether Polymers 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- YOSXAXYCARLZTR-UHFFFAOYSA-N prop-2-enoyl isocyanate Chemical compound C=CC(=O)N=C=O YOSXAXYCARLZTR-UHFFFAOYSA-N 0.000 description 1
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- 238000007763 reverse roll coating Methods 0.000 description 1
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- 238000007650 screen-printing Methods 0.000 description 1
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Classifications
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
- C09J7/22—Plastics; Metallised plastics
- C09J7/25—Plastics; Metallised plastics based on macromolecular compounds obtained otherwise than by reactions involving only carbon-to-carbon unsaturated bonds
- C09J7/255—Polyesters
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
- C09J7/29—Laminated material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D11/00—Constructional features of flexible abrasive materials; Special features in the manufacture of such materials
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/06—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B27/08—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/30—Layered products comprising a layer of synthetic resin comprising vinyl (co)polymers; comprising acrylic (co)polymers
- B32B27/308—Layered products comprising a layer of synthetic resin comprising vinyl (co)polymers; comprising acrylic (co)polymers comprising acrylic (co)polymers
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/36—Layered products comprising a layer of synthetic resin comprising polyesters
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
- C09J7/22—Plastics; Metallised plastics
- C09J7/24—Plastics; Metallised plastics based on macromolecular compounds obtained by reactions involving only carbon-to-carbon unsaturated bonds
- C09J7/241—Polyolefin, e.g.rubber
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
- C09J7/38—Pressure-sensitive adhesives [PSA]
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/50—Adhesives in the form of films or foils characterised by a primer layer between the carrier and the adhesive
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2405/00—Adhesive articles, e.g. adhesive tapes
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/10—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet
- C09J2301/12—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet by the arrangement of layers
- C09J2301/122—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet by the arrangement of layers the adhesive layer being present only on one side of the carrier, e.g. single-sided adhesive tape
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
- C09J2301/312—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2423/00—Presence of polyolefin
- C09J2423/006—Presence of polyolefin in the substrate
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2433/00—Presence of (meth)acrylic polymer
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- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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- C09J2433/00—Presence of (meth)acrylic polymer
- C09J2433/006—Presence of (meth)acrylic polymer in the substrate
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2467/00—Presence of polyester
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Abstract
다이싱 후에 행해지는 백그라인드 공정에 사용되는 백그라인드 테이프이며, 백그라인드 시에 발생할 수 있는 칩 떨어짐을 방지하는 백그라인드 테이프를 제공한다.
본 발명의 백그라인드 테이프는, 점착제층과, 중간층과, 제1 기재를 이 순서로 구비하고, 당해 중간층을 구성하는 재료가, 카르복실기를 갖고, 또한 가교되어 있지 않은 아크릴계 수지이며, 당해 점착제층을 Si 미러 웨이퍼에 접착시켰을 때의 초기 점착력이, 1N/20㎜∼30N/20㎜이다.This is a backgrind tape used in the backgrind process performed after dicing, and provides a backgrind tape that prevents chip dropping that may occur during backgrinding.
The backgrind tape of the present invention includes an adhesive layer, an intermediate layer, and a first base material in this order, and the material constituting the intermediate layer is an acrylic resin that has a carboxyl group and is not crosslinked, and the adhesive layer is The initial adhesive force when adhered to a Si mirror wafer is 1N/20mm to 30N/20mm.
Description
본 발명은, 백그라인드 테이프에 관한 것이다. 더 상세하게는, 다이싱 공정 후에 행해지는 백그라인드 공정에서, 적합하게 사용되는 백그라인드 테이프에 관한 것이다.The present invention relates to backgrind tape. More specifically, it relates to a backgrind tape that is suitably used in the backgrind process performed after the dicing process.
전자 부품의 집합체인 워크(예를 들어, 반도체 웨이퍼)는, 대직경으로 제조되고, 소자 소편으로 절단 분리(다이싱)되어, 다시 마운트 공정으로 이행된다. 이 다이싱 공정에서는 워크를 절단하여, 소편화한다. 다이싱 후의 워크를 고정하기 위해, 통상, 워크에 점착 테이프(다이싱 테이프)를 접합한 후, 다이싱을 행한다(예를 들어, 특허문헌 1). 다이싱의 방법 중 하나로서, 레이저광에 의해 워크를 다이싱하는 방법이 알려져 있다. 이러한 다이싱 방법으로서는, 레이저광을 워크의 표면에 집광시켜, 당해 워크의 표면에 홈을 형성한 후, 워크를 절단하는 방법이 다용되고 있다. 한편, 근년, 레이저광을 워크의 내부에 집광시키고, 당해 개소에서 워크를 개질시킨 후에, 워크를 절단하는 스텔스 다이싱도 제안되어 있다.A work (e.g., semiconductor wafer), which is an assembly of electronic components, is manufactured into a large diameter, cut and separated into element pieces (diced), and then transferred to the mounting process again. In this dicing process, the work is cut into small pieces. In order to fix the work after dicing, dicing is usually performed after attaching an adhesive tape (dicing tape) to the work (for example, patent document 1). As one of the dicing methods, a method of dicing a work using a laser beam is known. As such a dicing method, a method of focusing laser light on the surface of a work, forming grooves on the surface of the work, and then cutting the work is widely used. Meanwhile, in recent years, stealth dicing has also been proposed in which laser light is concentrated inside the workpiece, the workpiece is modified at that location, and then the workpiece is cut.
또한, 통상, 반도체 웨이퍼의 가공에서는, 소정의 두께(예를 들어, 100㎛∼600㎛)까지 이면을 연삭하는 것이 행해진다(백그라인드 공정). 종래, 반도체 웨이퍼의 표면에 패턴을 형성한 후에, 표면을 백그라인드 테이프에 고정하여 이면 연삭(백그라인드)을 행하고, 그 후, 다이싱 공정이 행해지고 있다. 한편, 근년, 상기 스텔스 다이싱의 유용성을 높이기 위해, 스텔스 다이싱을 행한 후에, 표면을 백그라인드 테이프에 고정하여 백그라인드 공정을 행하는 기술이 검토되고 있다.Additionally, usually in the processing of a semiconductor wafer, the back surface is ground to a predetermined thickness (for example, 100 μm to 600 μm) (backgrind process). Conventionally, after forming a pattern on the surface of a semiconductor wafer, the surface is fixed to a backgrind tape to perform backside grinding (backgrinding), and then a dicing process is performed. Meanwhile, in recent years, in order to increase the usefulness of the stealth dicing, a technique of performing a backgrind process by fixing the surface to a backgrind tape after performing stealth dicing has been studied.
상기한 바와 같이 백그라인드 공정 전에 다이싱을 행하면, 백그라인드 시에, 소편화된 칩끼리가 간섭하여 칩 떨어짐이 발생한다고 하는 새로운 과제가 발생한다.As described above, if dicing is performed before the backgrind process, a new problem arises in that, during backgrinding, small pieces of chips interfere with each other and chip dropping occurs.
본 발명의 과제는, 다이싱 후에 행해지는 백그라인드 공정에 사용되는 백그라인드 테이프이며, 백그라인드 시에 발생할 수 있는 칩 떨어짐을 방지하는 백그라인드 테이프를 제공하는 데 있다.The object of the present invention is to provide a backgrind tape that is used in a backgrind process performed after dicing and prevents chip dropping that may occur during backgrinding.
본 발명의 백그라인드 테이프는, 점착제층과, 중간층과, 제1 기재를 이 순서로 구비하고, 당해 중간층을 구성하는 재료가, 카르복실기를 갖고, 또한 가교되어 있지 않은 아크릴계 수지이며, 당해 점착제층을 Si 미러 웨이퍼에 접착시켰을 때의 초기 점착력이, 1N/20㎜∼30N/20㎜이다.The backgrind tape of the present invention includes an adhesive layer, an intermediate layer, and a first base material in this order, and the material constituting the intermediate layer is an acrylic resin that has a carboxyl group and is not crosslinked, and the adhesive layer is The initial adhesive force when adhered to a Si mirror wafer is 1N/20mm to 30N/20mm.
하나의 실시 형태에 있어서는, 상기 백그라인드 테이프는, 제2 기재를 더 구비하고, 당해 제2 기재가, 상기 제1 기재의 중간층과는 반대측에 배치된다.In one embodiment, the backgrind tape further includes a second substrate, and the second substrate is disposed on the opposite side to the intermediate layer of the first substrate.
하나의 실시 형태에 있어서는, 상기 제1 기재가, 폴리에틸렌테레프탈레이트로 구성된다.In one embodiment, the first substrate is made of polyethylene terephthalate.
하나의 실시 형태에 있어서는, 상기 제2 기재가, 폴리올레핀계 수지로 구성된다.In one embodiment, the second base material is made of polyolefin resin.
하나의 실시 형태에 있어서는, 상기 점착제층의 두께가, 1㎛∼50㎛이다.In one embodiment, the thickness of the adhesive layer is 1 μm to 50 μm.
하나의 실시 형태에 있어서는, 상기 중간층의 두께가, 5㎛∼50㎛이다.In one embodiment, the thickness of the intermediate layer is 5 μm to 50 μm.
하나의 실시 형태에 있어서는, 상기 백그라인드 테이프는, 스텔스 다이싱된 반도체 웨이퍼를 이면 연삭할 때에 사용된다.In one embodiment, the backgrind tape is used when grinding the backside of a stealth diced semiconductor wafer.
본 발명에 따르면, 백그라인드 시에 발생할 수 있는 칩 떨어짐을 방지하는 백그라인드 테이프를 제공할 수 있다. 본 발명의 백그라인드 테이프는, 다이싱(바람직하게는, 스텔스 다이싱) 후에 행해지는 백그라인드 공정에 사용되는 백그라인드 테이프로서 특히 유용하다.According to the present invention, it is possible to provide a backgrind tape that prevents chip dropping that may occur during backgrinding. The backgrind tape of the present invention is particularly useful as a backgrind tape used in a backgrind process performed after dicing (preferably stealth dicing).
도 1은 본 발명의 하나의 실시 형태에 의한 백그라인드 테이프의 개략 단면도이다.
도 2는 본 발명의 다른 실시 형태에 의한 백그라인드 테이프의 개략 단면도이다.1 is a schematic cross-sectional view of a backgrind tape according to one embodiment of the present invention.
Figure 2 is a schematic cross-sectional view of a backgrind tape according to another embodiment of the present invention.
A. 백그라인드 테이프의 개요A. Overview of the background tape
도 1은, 본 발명의 하나의 실시 형태에 의한 백그라인드 테이프의 개략 단면도이다. 이 실시 형태에 의한 백그라인드 테이프(100)는, 점착제층(10)과, 중간층(20)과, 제1 기재(31)를 구비한다. 도시하지 않았지만, 본 발명의 백그라인드 테이프는, 사용에 제공할 때까지의 동안, 점착면을 보호할 목적으로, 점착제층의 외측에 박리 라이너가 마련되어 있어도 된다(도시하지 않음). 또한, 백그라인드 테이프는, 본 발명의 효과가 얻어지는 한, 임의의 적절한 그 밖의 층을 더 포함하고 있어도 된다. 바람직하게는, 중간층은, 제1 기재에 직접 배치된다. 또한, 바람직하게 점착제층은 중간층에 직접 배치된다.1 is a schematic cross-sectional view of a backgrind tape according to one embodiment of the present invention. The backgrind tape 100 according to this embodiment includes an adhesive layer 10, an intermediate layer 20, and a first base material 31. Although not shown, the backgrind tape of the present invention may be provided with a release liner on the outside of the adhesive layer (not shown) for the purpose of protecting the adhesive surface during use. In addition, the backgrind tape may further include any suitable other layer as long as the effect of the present invention is obtained. Preferably, the intermediate layer is disposed directly on the first substrate. Additionally, preferably the adhesive layer is disposed directly on the intermediate layer.
본 발명의 백그라인드 테이프는, 다이싱된 반도체 웨이퍼를 이면 연삭(백그라인드)할 때, 당해 반도체 웨이퍼를 고정하기 위해 적합하게 사용될 수 있고, 상기 다이싱으로서 스텔스 다이싱을 채용하는 경우에 특히 적합하게 사용될 수 있다. 스텔스 다이싱이라 함은, 레이저광의 조사에 의해, 반도체 웨이퍼의 내부에 개질층을 형성하는 것을 의미한다. 반도체 웨이퍼는 당해 개질층을 기점으로 하여, 할단될 수 있다.The backgrind tape of the present invention can be suitably used to fix a diced semiconductor wafer when back-grinding the semiconductor wafer, and is particularly suitable when stealth dicing is employed as the dicing. It can be used effectively. Stealth dicing means forming a modified layer inside a semiconductor wafer by irradiation of laser light. The semiconductor wafer can be cut using the modified layer as a starting point.
본 발명에 있어서는, 점착제층과 중간층을 조합하여 형성하고, 중간층을 구성하는 재료로서, 카르복실기를 갖고, 가교되어 있지 않은 아크릴계 수지를 사용함으로써, 다이싱 후에 행해지는 백그라인드 공정에 사용되는 백그라인드 테이프이며, 백그라인드 시에 발생할 수 있는 칩 떨어짐을 방지하는 백그라인드 테이프를 제공할 수 있다. 상기한 바와 같이 구성된 본 발명의 백그라인드 테이프는, 면 방향의 외력에 대해, 변형되기 어렵고, 또한 변형되어도 그 후에 원래의 형상으로 돌아가기 어렵다고 하는 특징을 갖는다. 이러한 백그라인드 테이프를 사용하면, 다이싱 후에 소편화된 칩이 과도하게 서로 간섭하는 것을 방지하고, 당해 칩이 떨어지는 등의 문제를 방지하여 백그라인드를 행할 수 있다. 본 발명의 백그라인드 테이프는, 스텔스 다이싱을 포함하는 반도체 웨이퍼 가공에 특히 유용하다.In the present invention, a backgrind tape used in a backgrind process performed after dicing is formed by combining an adhesive layer and an intermediate layer, and uses an acrylic resin that has a carboxyl group and is not crosslinked as the material constituting the intermediate layer. In addition, backgrind tape can be provided to prevent chip dropping that may occur during backgrinding. The backgrind tape of the present invention configured as described above has the characteristics of being difficult to deform in response to an external force in the plane direction, and even if deformed, it is difficult to return to its original shape afterwards. By using such a backgrind tape, backgrinding can be performed by preventing small pieces of chips from excessively interfering with each other after dicing and preventing problems such as the chips falling off. The backgrind tape of the present invention is particularly useful for semiconductor wafer processing, including stealth dicing.
도 2는, 본 발명의 다른 실시 형태에 의한 백그라인드 테이프의 개략 단면도이다. 이 실시 형태에 의한 백그라인드 테이프(200)는, 기재가 2층 구성이며, 제2 기재(32)를 더 구비한다. 제2 기재(32)는, 제1 기재(31)의 중간층(20)과는 반대측에 배치된다. 즉, 백그라인드 테이프(200)는, 점착제층(10)과, 중간층(20)과, 제1 기재(31)와, 제2 기재(32)를 이 순서로 구비한다. 바람직하게는, 제2 기재로서, 제1 기재보다 유연한(예를 들어, 탄성률이 낮은) 기재가 사용된다. 본 실시 형태에 의한 백그라인드 테이프는, 백그라인드 시에 있어서의 칩 떨어짐 등의 문제를 더 바람직하게 방지할 수 있다. 스텔스 다이싱을 포함하는 반도체 웨이퍼 가공은 레이저광에 의해 형성된 변질층으로부터 웨이퍼 표면으로 연장되는 균열(이른바 BHC)을 발생시켜, 반도체 웨이퍼를 소편화시키는 것이지만, 백그라인드 전에 당해 균열을 발생시키는 실시 형태는 물론, 가공이 더 곤란해지는 실시 형태, 즉, 당해 균열을 백그라인드 시에 발생시키는 실시 형태에 있어서도, 칩 떨어짐 등의 문제를 방지할 수 있다. 또한, 기재는 3층 이상의 구성이어도 된다.Figure 2 is a schematic cross-sectional view of a backgrind tape according to another embodiment of the present invention. The backgrind tape 200 according to this embodiment has a two-layer structure and further includes a second base material 32. The second substrate 32 is disposed on the opposite side to the intermediate layer 20 of the first substrate 31. That is, the backgrind tape 200 includes an adhesive layer 10, an intermediate layer 20, a first substrate 31, and a second substrate 32 in this order. Preferably, as the second substrate, a substrate that is softer (eg, has a lower elastic modulus) than the first substrate is used. The backgrind tape according to this embodiment can more effectively prevent problems such as chip dropping during backgrinding. Semiconductor wafer processing including stealth dicing generates cracks (so-called BHC) extending from the affected layer formed by laser light to the wafer surface, thereby miniaturizing the semiconductor wafer. However, an embodiment in which the cracks are generated before backgrinding is Of course, even in embodiments where processing becomes more difficult, that is, embodiments in which the cracks occur during backgrinding, problems such as chip dropping can be prevented. Additionally, the base material may have a structure of three or more layers.
본 발명의 백그라인드 테이프의 점착제층을 Si 미러 웨이퍼에 접착시켰을 때의 초기 점착력은, 바람직하게는 1N/20㎜∼30N/20㎜이고, 보다 바람직하게는 2N/20㎜∼20N/20㎜이고, 더욱 바람직하게는 3N/20㎜∼15N/20㎜이고, 특히 바람직하게는 4N/20㎜∼10N/20㎜이다. 이러한 범위이면, 백그라인드 시에 반도체 웨이퍼를 양호하게 고정할 수 있는 백그라인드 테이프를 얻을 수 있다. 또한, 본 발명의 백그라인드 테이프는, 활성 에너지선(예를 들어, 자외선)의 조사에 의해 점착력이 저하될 수 있는 테이프로 할 수 있지만, 상기 「초기 점착력」이라 함은, 활성 에너지선을 조사하기 전의 점착력을 의미한다. 본 발명에 있어서, 점착력은, JIS Z 0237: 2000에 준하여 측정된다. 구체적으로는, 점착력은, 인장 시험기(텐실론, 시마즈 세이사쿠쇼사 제조)를 사용하여 23℃, 박리 속도 300㎜/min, 박리 각도: 180°의 조건에서 측정된다.The initial adhesive force when the adhesive layer of the backgrind tape of the present invention is adhered to a Si mirror wafer is preferably 1 N/20 mm to 30 N/20 mm, and more preferably 2 N/20 mm to 20 N/20 mm. , more preferably 3N/20mm to 15N/20mm, and particularly preferably 4N/20mm to 10N/20mm. Within this range, a backgrind tape capable of well fixing the semiconductor wafer during backgrinding can be obtained. In addition, the backgrind tape of the present invention can be made into a tape whose adhesive strength can be reduced by irradiation of active energy rays (for example, ultraviolet rays), but the above-mentioned “initial adhesive strength” refers to the irradiation of active energy rays. This refers to the adhesive strength before application. In the present invention, adhesive force is measured according to JIS Z 0237: 2000. Specifically, the adhesive force is measured using a tensile tester (Tensilon, manufactured by Shimadzu Seisakusho) under the conditions of 23°C, peeling speed of 300 mm/min, and peeling angle: 180°.
백그라인드 테이프의 두께는, 바람직하게는 35㎛∼500㎛이고, 보다 바람직하게는 60㎛∼300㎛이고, 더욱 바람직하게는 80㎛∼200㎛이다.The thickness of the backgrind tape is preferably 35 μm to 500 μm, more preferably 60 μm to 300 μm, and still more preferably 80 μm to 200 μm.
B. 기재B. Description
B-1. 제1 기재B-1. 1st description
상기 제1 기재로서는, 수지 필름이 바람직하게 사용된다. 수지 필름을 구성하는 수지로서는, 예를 들어 폴리에틸렌테레프탈레이트(PET) 등의 폴리에스테르계 수지, 폴리프로필렌(PP) 등의 폴리올레핀계 수지, 폴리이미드(PI), 폴리에테르이미드(PEI), 폴리페닐렌술피드(PPS), 폴리술폰(PSF), 폴리에테르에테르케톤(PEEK), 폴리아릴레이트(PAR) 등을 들 수 있다. 그 중에서도 바람직하게는, 폴리에스테르계 수지이고, 특히 바람직하게는 폴리에틸렌테레프탈레이트이다. 폴리에틸렌테레프탈레이트로 구성되는 제1 기재를 사용하면, 백그라인드 시에 있어서의 칩 떨어짐 등의 문제를 더 바람직하게 방지할 수 있는 백그라인드 테이프를 얻을 수 있다.As the first substrate, a resin film is preferably used. Resins constituting the resin film include, for example, polyester resins such as polyethylene terephthalate (PET), polyolefin resins such as polypropylene (PP), polyimide (PI), polyetherimide (PEI), and polyphenyl. Examples include lene sulfide (PPS), polysulfone (PSF), polyetheretherketone (PEEK), and polyarylate (PAR). Among these, polyester resin is preferred, and polyethylene terephthalate is particularly preferred. By using the first base material comprised of polyethylene terephthalate, it is possible to obtain a backgrind tape that can more preferably prevent problems such as chip dropping during backgrinding.
상기 제1 기재의 23℃에 있어서의 인장 탄성률은, 바람직하게는 50㎫∼10000㎫이고, 더 바람직하게는 100㎫∼5000㎫이다. 제1 기재(및 백그라인드 테이프를 구성하는 각 층(후술))의 인장 탄성률의 측정은, 인장 시험기(SHIMADZU사 제조, 「AG-IS」)를 사용하여, 척간 거리: 50㎜, 인장 속도: 300㎜/min, 샘플 폭: 10㎜의 조건에서 행해진다.The tensile modulus of elasticity at 23°C of the first substrate is preferably 50 MPa to 10,000 MPa, and more preferably 100 MPa to 5,000 MPa. The tensile modulus of elasticity of the first base material (and each layer constituting the backgrind tape (described later)) was measured using a tensile tester (“AG-IS” manufactured by SHIMADZU), distance between chucks: 50 mm, tensile speed: It is carried out under the conditions of 300 mm/min and sample width: 10 mm.
상기 제1 기재의 두께는, 바람직하게는 25㎛∼200㎛이고, 보다 바람직하게는 30㎛∼150㎛이고, 더욱 바람직하게는 40㎛∼100㎛이고, 특히 바람직하게는 40㎛∼80㎛이다.The thickness of the first substrate is preferably 25 μm to 200 μm, more preferably 30 μm to 150 μm, further preferably 40 μm to 100 μm, and particularly preferably 40 μm to 80 μm. .
상기 제1 기재는, 임의의 적절한 첨가제를 더 포함할 수 있다. 첨가제로서는, 예를 들어 활제, 산화 방지제, 자외선 흡수제, 가공 보조제, 충전제, 대전 방지제, 안정제, 항균제, 난연제, 착색제 등을 들 수 있다.The first substrate may further include any suitable additive. Examples of additives include lubricants, antioxidants, ultraviolet absorbers, processing aids, fillers, antistatic agents, stabilizers, antibacterial agents, flame retardants, colorants, etc.
B-2. 제2 기재B-2. 2nd description
상기 제2 기재로서는, 수지 필름이 바람직하게 사용된다. 수지 필름을 구성하는 수지로서는, 예를 들어 폴리에틸렌테레프탈레이트(PET) 등의 폴리에스테르계 수지, 폴리프로필렌(PP) 등의 폴리올레핀계 수지, 폴리이미드(PI), 폴리에테르이미드(PEI), 폴리페닐렌술피드(PPS), 폴리술폰(PSF), 폴리에테르에테르케톤(PEEK), 폴리아릴레이트(PAR) 등을 들 수 있다. 그 중에서도 바람직하게는, 폴리올레핀계 수지이다.As the second substrate, a resin film is preferably used. Resins constituting the resin film include, for example, polyester resins such as polyethylene terephthalate (PET), polyolefin resins such as polypropylene (PP), polyimide (PI), polyetherimide (PEI), and polyphenyl. Examples include lene sulfide (PPS), polysulfone (PSF), polyetheretherketone (PEEK), and polyarylate (PAR). Among these, polyolefin resin is preferred.
하나의 실시 형태에 있어서는, 상기 제2 기재는, 폴리에틸렌계 수지 또는 폴리프로필렌계 수지를 포함한다. 폴리에틸렌계 수지로서는, 예를 들어 저밀도 폴리에틸렌, 직쇄상 폴리에틸렌, 중밀도 폴리에틸렌, 고밀도 폴리에틸렌, 초저밀도 폴리에틸렌 등을 들 수 있다. 폴리에틸렌계 수지 중, 에틸렌 유래의 구성 단위의 함유 비율은, 바람직하게는 80몰% 이상이고, 보다 바람직하게는 90몰% 이상이고, 더욱 바람직하게는 95몰% 이상이다. 에틸렌 유래의 구성 단위 이외의 구성 단위로서는, 에틸렌과 공중합체와 공중합 가능한 단량체 유래의 구성 단위를 들 수 있고, 예를 들어 프로필렌, 1-부텐, 이소부텐, 1-펜텐, 2-메틸-1-부텐, 3-메틸-1-부텐, 1-헥센, 3-메틸-1-펜텐, 4-메틸-1-펜텐, 1-헵텐, 1-옥텐, 1-데센, 1-도데센, 1- 테트라데센, 1- 헥사데센, 1-옥타데센, 1-이코센 등을 들 수 있다.In one embodiment, the second base material contains polyethylene-based resin or polypropylene-based resin. Examples of polyethylene-based resins include low-density polyethylene, linear polyethylene, medium-density polyethylene, high-density polyethylene, and ultra-low-density polyethylene. In the polyethylene resin, the content ratio of the structural unit derived from ethylene is preferably 80 mol% or more, more preferably 90 mol% or more, and even more preferably 95 mol% or more. Structural units other than ethylene-derived structural units include structural units derived from monomers copolymerizable with ethylene and copolymers, for example, propylene, 1-butene, isobutene, 1-pentene, 2-methyl-1- Butene, 3-methyl-1-butene, 1-hexene, 3-methyl-1-pentene, 4-methyl-1-pentene, 1-heptene, 1-octene, 1-decene, 1-dodecene, 1-tetra Decene, 1-hexadecene, 1-octadecene, 1-icosene, etc. can be mentioned.
하나의 실시 형태에 있어서는, 제1 기재로서 폴리에틸렌테레프탈레이트로 구성되는 기재를 사용하고, 또한 제2 기재로서 폴리올레핀계 수지(바람직하게는, 상기 폴리에틸렌계 수지 또는 폴리프로필렌계 수지)로 구성되는 기재를 사용한다. 이들 기재를 사용하면, 백그라인드 시에 있어서의 칩 떨어짐 등의 문제를 더 바람직하게 방지할 수 있다.In one embodiment, a substrate made of polyethylene terephthalate is used as the first substrate, and a substrate made of polyolefin resin (preferably the polyethylene resin or polypropylene resin) is used as the second substrate. use. By using these base materials, problems such as chip dropping during backgrinding can be more preferably prevented.
상기 제2 기재의 23℃에 있어서의 인장 탄성률은, 바람직하게는 50㎫∼2000㎫이고, 더 바람직하게는 100㎫∼1000㎫이다.The tensile modulus of elasticity at 23°C of the second substrate is preferably 50 MPa to 2000 MPa, and more preferably 100 MPa to 1000 MPa.
상기 제2 기재의 23℃에 있어서의 인장 탄성률은, 상기 제1 기재의 23℃에 있어서의 인장 탄성률보다 작은 것이 바람직하다. 제2 기재의 23℃에 있어서의 인장 탄성률은, 상기 제1 기재의 23℃에 있어서의 인장 탄성률에 대해, 바람직하게는 0.5%∼100%이고, 보다 바람직하게는 0.5% 이상 100% 미만이고, 더욱 바람직하게는 1%∼50%이다.The tensile modulus of elasticity at 23°C of the second substrate is preferably smaller than the tensile modulus of elasticity of the first substrate at 23°C. The tensile modulus of elasticity at 23°C of the second base material is preferably 0.5% to 100%, more preferably 0.5% or more and less than 100%, relative to the tensile elasticity modulus of the first base material at 23°C, More preferably, it is 1% to 50%.
상기 제2 기재의 두께는, 바람직하게는 25㎛∼200㎛이고, 보다 바람직하게는 30㎛∼150㎛이고, 더욱 바람직하게는 40㎛∼100㎛이고, 특히 바람직하게는 40㎛∼80㎛이다.The thickness of the second substrate is preferably 25 μm to 200 μm, more preferably 30 μm to 150 μm, further preferably 40 μm to 100 μm, and particularly preferably 40 μm to 80 μm. .
상기 제2 기재는, 임의의 적절한 첨가제를 더 포함할 수 있다. 첨가제로서는, 예를 들어 활제, 산화 방지제, 자외선 흡수제, 가공 보조제, 충전제, 대전 방지제, 안정제, 항균제, 난연제, 착색제 등을 들 수 있다.The second substrate may further include any suitable additive. Examples of additives include lubricants, antioxidants, ultraviolet absorbers, processing aids, fillers, antistatic agents, stabilizers, antibacterial agents, flame retardants, colorants, etc.
제1 기재와 제2 기재는, 임의의 적절한 접착제층을 통해 적층될 수 있다. 이들 기재 사이의 접착제층의 두께는, 예를 들어 2㎛∼10㎛이다.The first and second substrates may be laminated through any suitable adhesive layer. The thickness of the adhesive layer between these base materials is, for example, 2 μm to 10 μm.
C. 중간층C. Middle layer
상기 중간층은, 카르복실기를 갖고, 가교(예를 들어, 에폭시 가교)되어 있지 않은 아크릴계 수지로 구성된다. 이러한 중간층은, 측쇄에 카르복실기를 갖는 아크릴계 수지를 포함하고, 당해 카르복실기와 반응하여 가교 구조를 형성시키는 가교제 등의 가교성 화합물을 포함하지 않는 중간층 형성용 조성물에 의해 형성될 수 있다. 중간층을 구성하는 아크릴계 수지는, (메트)아크릴산알킬에스테르 및 카르복실기 함유 모노머를 포함하는 모노머 성분을 중합하여 얻어지고, (메트)아크릴산알킬에스테르 유래의 구성 단위 및 카르복실기 함유 모노머 유래의 구성 단위(측쇄에 카르복실기를 갖는 구성 단위)를 포함한다. 아크릴계 수지의 가교의 유무는, 열분해 GC/MS 분석에 의해 확인할 수 있다.The intermediate layer is composed of an acrylic resin that has a carboxyl group and is not crosslinked (for example, epoxy crosslinked). This intermediate layer can be formed from a composition for forming an intermediate layer that contains an acrylic resin having a carboxyl group in the side chain and does not contain a crosslinking compound such as a crosslinking agent that reacts with the carboxyl group to form a crosslinked structure. The acrylic resin constituting the intermediate layer is obtained by polymerizing a monomer component containing an alkyl (meth)acrylate ester and a carboxyl group-containing monomer, and contains a structural unit derived from an alkyl (meth)acrylate ester and a structural unit derived from a carboxyl group-containing monomer (in the side chain). structural units having a carboxyl group). The presence or absence of crosslinking of the acrylic resin can be confirmed by thermal decomposition GC/MS analysis.
상기 (메트)아크릴산알킬에스테르로서는, 예를 들어 (메트)아크릴산n-부틸, (메트)아크릴산이소부틸, (메트)아크릴산s-부틸, (메트)아크릴산t-부틸, (메트)아크릴산펜틸, (메트)아크릴산이소펜틸, (메트)아크릴산헥실, (메트)아크릴산헵틸, (메트)아크릴산옥틸, (메트)아크릴산2-에틸헥실, (메트)아크릴산이소옥틸, (메트)아크릴산노닐, (메트)아크릴산이소노닐, (메트)아크릴산데실, (메트)아크릴산이소데실, (메트)아크릴산운데실, (메트)아크릴산도데실, (메트)아크릴산트리데실, (메트)아크릴산테트라데실, (메트)아크릴산펜타데실, (메트)아크릴산헥사데실, (메트)아크릴산헵타데실, (메트)아크릴산옥타데실, (메트)아크릴산노나데실, (메트)아크릴산에이코실 등의 알킬기의 탄소수가 4∼20인 직쇄 또는 분지쇄상의 알킬기를 갖는 (메트)아크릴산알킬에스테르 등을 들 수 있다. 이들 중에서도, 피착체에 대한 접착성이나 접합 작업성의 관점에서, 알킬기의 탄소수가 5∼12인 (메트)아크릴산알킬에스테르가 바람직하고, 더 바람직하게는, 아크릴산n-부틸 또는 아크릴산2-에틸헥실(2EHA)이다. (메트)아크릴산알킬에스테르는, 1종만을 단독으로, 또는 2종 이상을 조합하여 사용할 수 있다.Examples of the (meth)acrylic acid alkyl esters include n-butyl (meth)acrylate, isobutyl (meth)acrylate, s-butyl (meth)acrylate, t-butyl (meth)acrylate, pentyl (meth)acrylate, ( Isopentyl (meth)acrylate, hexyl (meth)acrylate, heptyl (meth)acrylate, octyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, isooctyl (meth)acrylate, nonyl (meth)acrylate, (meth)acrylic acid. Isononyl, decyl (meth)acrylate, isodecyl (meth)acrylate, undecyl (meth)acrylate, dodecyl (meth)acrylate, tridecyl (meth)acrylate, tetradecyl (meth)acrylate, penta (meth)acrylate Alkyl groups such as decyl, hexadecyl (meth)acrylate, heptadecyl (meth)acrylate, octadecyl (meth)acrylate, nonadecyl (meth)acrylate, and eicosyl (meth)acrylate are straight or branched and have 4 to 20 carbon atoms. (meth)acrylic acid alkyl esters having an alkyl group, etc. Among these, from the viewpoint of adhesion to the adherend and bonding workability, (meth)acrylic acid alkyl esters in which the alkyl group has 5 to 12 carbon atoms are preferable, and more preferably, n-butyl acrylate or 2-ethylhexyl acrylate ( 2EHA). (meth)acrylic acid alkyl esters can be used individually or in combination of two or more types.
상기 아크릴계 수지 중, (메트)아크릴산알킬에스테르 유래의 구성 단위의 함유 비율은, 아크릴계 수지 100중량부에 대해, 바람직하게는 70중량부∼98중량부이고, 더 바람직하게는 85중량부∼96중량부이다.In the acrylic resin, the content ratio of the structural unit derived from alkyl (meth)acrylate is preferably 70 parts by weight to 98 parts by weight, more preferably 85 parts by weight to 96 parts by weight, based on 100 parts by weight of the acrylic resin. It is wealth.
상기 카르복시기 함유 모노머로서는, 예를 들어 아크릴산(AA), 메타크릴산(MAA), 크로톤산 등의 에틸렌성 불포화 모노카르복실산; 말레산, 이타콘산, 시트라콘산 등의 에틸렌성 불포화 디카르복실산 등을 들 수 있다. 상기 아크릴계 수지는 측쇄에 카르복실기를 갖고, 이러한 아크릴계 수지로 구성된 중간층을 구비하는 백그라인드 테이프는, 백그라인드 시에 발생할 수 있는 칩 떨어짐을 방지한다. 카르복시기 함유 모노머는, 1종만을 단독으로, 또는 2종 이상을 조합하여 사용할 수 있다.Examples of the carboxyl group-containing monomer include ethylenically unsaturated monocarboxylic acids such as acrylic acid (AA), methacrylic acid (MAA), and crotonic acid; and ethylenically unsaturated dicarboxylic acids such as maleic acid, itaconic acid, and citraconic acid. The acrylic resin has a carboxyl group in the side chain, and a backgrind tape having an intermediate layer made of this acrylic resin prevents chip dropping that may occur during backgrinding. Carboxyl group-containing monomers can be used individually or in combination of two or more types.
상기 아크릴계 수지 중, 카르복실기 함유 모노머 유래의 구성 단위의 함유 비율은, 아크릴계 수지 100중량부에 대해, 바람직하게는 2중량부∼30중량부이고, 보다 바람직하게는 4중량부∼15중량부이고, 특히 바람직하게는 4중량부∼8중량부이다. 또한, 카르복실기 함유 모노머 유래의 구성 단위의 함유 비율은, (메트)아크릴산알킬에스테르 유래의 구성 단위 100중량부에 대해, 바람직하게는 2중량부∼30중량부이고, 보다 바람직하게는 5중량부∼20중량부이고, 더욱 바람직하게는 5중량부∼10중량부이다.In the acrylic resin, the content ratio of the structural unit derived from the carboxyl group-containing monomer is preferably 2 parts by weight to 30 parts by weight, more preferably 4 parts by weight to 15 parts by weight, based on 100 parts by weight of the acrylic resin. Particularly preferably, it is 4 to 8 parts by weight. In addition, the content ratio of the structural unit derived from the carboxyl group-containing monomer is preferably 2 parts by weight to 30 parts by weight, and more preferably 5 parts by weight to 100 parts by weight of the structural unit derived from the alkyl (meth)acrylate. It is 20 parts by weight, more preferably 5 to 10 parts by weight.
상기 아크릴계 수지는, 필요에 따라서, 상기 (메트)아크릴산알킬에스테르와 공중합 가능한 그 밖의 모노머 유래의 구성 단위를 포함하고 있어도 된다. 그 밖의 모노머로서는, 하기의 모노머를 들 수 있다. 이들 모노머는, 1종만을 단독으로, 또는 2종 이상을 조합하여 사용할 수 있다.The acrylic resin may, if necessary, contain structural units derived from other monomers copolymerizable with the (meth)acrylic acid alkyl ester. Other monomers include the following monomers. These monomers can be used individually or in combination of two or more types.
수산기 함유 모노머: 예를 들어 2-히드록시에틸(메트)아크릴레이트, 2-히드록시프로필(메트)아크릴레이트, 3-히드록시프로필(메트)아크릴레이트, 2-히드록시부틸(메트)아크릴레이트 등의 히드록시알킬(메트)아크릴레이트류; 비닐알코올, 알릴알코올 등의 불포화 알코올류; 2-히드록시에틸비닐에테르, 4-히드록시부틸비닐에테르, 디에틸렌글리콜모노비닐에테르 등의 에테르계 화합물;Hydroxyl group-containing monomers: e.g. 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 3-hydroxypropyl (meth)acrylate, 2-hydroxybutyl (meth)acrylate hydroxyalkyl (meth)acrylates such as; unsaturated alcohols such as vinyl alcohol and allyl alcohol; Ether compounds such as 2-hydroxyethyl vinyl ether, 4-hydroxybutyl vinyl ether, and diethylene glycol monovinyl ether;
아미노기 함유 모노머: 예를 들어 아미노에틸(메트)아크릴레이트, N,N-디메틸아미노에틸(메트)아크릴레이트, t-부틸아미노에틸(메트)아크릴레이트;Amino group-containing monomers: for example, aminoethyl (meth)acrylate, N,N-dimethylaminoethyl (meth)acrylate, t-butylaminoethyl (meth)acrylate;
시아노기 함유 모노머: 예를 들어 아크릴로니트릴, 메타크릴로니트릴;Monomers containing cyano groups: for example acrylonitrile, methacrylonitrile;
케토기 함유 모노머: 예를 들어 디아세톤(메트)아크릴아미드, 디아세톤(메트)아크릴레이트, 비닐메틸케톤, 비닐에틸케톤, 알릴아세토아세테이트, 비닐아세토아세테이트;Keto group-containing monomers: for example, diacetone (meth)acrylamide, diacetone (meth)acrylate, vinyl methyl ketone, vinyl ethyl ketone, allyl aceto acetate, vinyl aceto acetate;
질소 원자 함유 환을 갖는 모노머: 예를 들어 N-비닐-2-피롤리돈, N-메틸비닐피롤리돈, N-비닐피리딘, N-비닐피페리돈, N-비닐피리미딘, N-비닐피페라진, N-비닐피라진, N-비닐피롤, N-비닐이미다졸, N-비닐옥사졸, N-비닐모르폴린, N-비닐카프로락탐, N-(메트)아크릴로일모르폴린;Monomers with rings containing nitrogen atoms: for example N-vinyl-2-pyrrolidone, N-methylvinylpyrrolidone, N-vinylpyridine, N-vinylpiperidone, N-vinylpyrimidine, N-vinylpipe Razine, N-vinylpyrazine, N-vinylpyrrole, N-vinylimidazole, N-vinyloxazole, N-vinylmorpholine, N-vinylcaprolactam, N-(meth)acryloylmorpholine;
알콕시실릴기 함유 모노머: 예를 들어 3-(메트)아크릴옥시프로필트리메톡시실란, 3-(메트)아크릴옥시프로필트리에톡시실란, 3-(메트)아크릴옥시프로필메틸디메톡시실란, 3-(메트)아크릴옥시프로필메틸디에톡시실란.Monomers containing alkoxysilyl groups: for example 3-(meth)acryloxypropyltrimethoxysilane, 3-(meth)acryloxypropyltriethoxysilane, 3-(meth)acryloxypropylmethyldimethoxysilane, 3- (Meth)acryloxypropylmethyldiethoxysilane.
상기 아크릴계 수지 중, 그 밖의 모노머 유래의 구성 단위의 함유 비율은, 아크릴계 수지 100중량부에 대해, 바람직하게는 40중량부 이하이고, 더 바람직하게는 20중량부 이하이고, 더욱 바람직하게는 10 중량부 이하이다.In the acrylic resin, the content ratio of structural units derived from other monomers is preferably 40 parts by weight or less, more preferably 20 parts by weight or less, and even more preferably 10 parts by weight, based on 100 parts by weight of the acrylic resin. It is below wealth.
상기 아크릴계 수지의 중량 평균 분자량은, 바람직하게는 20만∼300만이고, 보다 바람직하게는 25만∼150만이다. 중량 평균 분자량은, GPC(용매: THF)에 의해 측정될 수 있다.The weight average molecular weight of the acrylic resin is preferably 200,000 to 3 million, and more preferably 250,000 to 1.5 million. Weight average molecular weight can be measured by GPC (solvent: THF).
상기 중간층 형성용 조성물은, 임의의 적절한 첨가제를 더 포함하고 있어도 된다. 상기 첨가제로서는, 예를 들어 가소제, 점착성 부여제, 노화 방지제, 충전제, 착색제, 대전 방지제, 계면 활성제 등을 들 수 있다. 상기 첨가제는 단독으로 사용해도 되고, 2종 이상 조합하여 사용해도 된다. 2종 이상의 첨가제를 사용하는 경우, 1종씩 첨가해도 되고, 2종 이상의 첨가제를 동시에 첨가해도 된다. 상기 첨가제의 배합량은, 임의의 적절한 양으로 설정될 수 있다.The composition for forming the intermediate layer may further contain any appropriate additives. Examples of the additive include plasticizers, tackifiers, anti-aging agents, fillers, colorants, antistatic agents, and surfactants. The above additives may be used individually or in combination of two or more types. When two or more types of additives are used, they may be added one by one, or two or more types of additives may be added simultaneously. The mixing amount of the additive may be set to any appropriate amount.
상기 중간층의 두께는, 바람직하게는 5㎛∼50㎛이고, 보다 바람직하게는 10㎛∼40㎛이고, 더욱 바람직하게는 15㎛∼30㎛이다. 이러한 범위이면, 백그라인드 시에 있어서의 칩 떨어짐 등의 문제를 더 바람직하게 방지할 수 있다.The thickness of the intermediate layer is preferably 5 μm to 50 μm, more preferably 10 μm to 40 μm, and still more preferably 15 μm to 30 μm. Within this range, problems such as chip dropping during backgrinding can be more preferably prevented.
상기 중간층의 두께는, 상기 점착제층의 두께에 대해, 2배∼20배인 것이 바람직하고, 3배∼10배인 것이 보다 바람직하고, 3배∼7배인 것이 더욱 바람직하다. 이러한 두께의 관계로 중간층과 점착제층을 구성하면, 면 방향의 외력에 대해, 변형되기 어렵고, 또한 변형되어도 그 후에 원래의 형상으로 돌아가기 어려운 백그라인드 테이프를 얻을 수 있다.The thickness of the intermediate layer is preferably 2 to 20 times, more preferably 3 to 10 times, and even more preferably 3 to 7 times the thickness of the adhesive layer. If the intermediate layer and the adhesive layer are configured in this thickness relationship, it is possible to obtain a backgrind tape that is difficult to deform in response to external force in the plane direction and is difficult to return to its original shape after deformation.
상기 중간층의 23℃에 있어서의 저장 탄성률 E'은, 바람직하게는 200㎫ 이하이고, 보다 바람직하게는 30㎫∼180㎫이고, 더욱 바람직하게는 50㎫∼160㎫이다. 이러한 범위이면, 요철면에 대한 추종성이 특히 우수한 백그라인드 테이프를 얻을 수 있다. 저장 탄성률 E'은, 나노 인덴테이션법에 의해 측정될 수 있다. 측정 조건은 이하와 같다.The storage modulus E' of the intermediate layer at 23°C is preferably 200 MPa or less, more preferably 30 MPa to 180 MPa, and still more preferably 50 MPa to 160 MPa. Within this range, a backgrind tape with particularly excellent followability to uneven surfaces can be obtained. The storage modulus E' can be measured by a nano-indentation method. The measurement conditions are as follows.
(측정 장치 및 측정 조건)(Measurement device and measurement conditions)
장치: Hysitron Inc. 제조 Tribo IndenterApparatus: Hysitron Inc. Manufacturing Tribo Indenter
사용 압자: Berkovich(삼각뿔형)Indenter used: Berkovich (triangular pyramid type)
측정 방법: 단일 압입 측정Measurement method: single indentation measurement
측정 온도: 25℃Measurement temperature: 25℃
압입 깊이 설정: 약 300㎚Indentation depth setting: approximately 300㎚
압입 속도: 약 10㎚/secIndentation speed: approximately 10㎚/sec
주파수: 100㎐Frequency: 100Hz
측정 분위기: 공기 중Measurement atmosphere: in air
시료 사이즈: 약 1㎝×약 1㎝Sample size: approximately 1 cm × approximately 1 cm
상기 중간층의 23℃에 있어서의 인장 탄성률은, 바람직하게는 0.05㎫∼10㎫이고, 보다 바람직하게는 0.1㎫∼5㎫이고, 더욱 바람직하게는 0.2㎫∼3㎫이다. 이러한 범위이면, 중간층을 구성하는 재료로서 특정 재료를 채용하는 것과 더불어, 백그라인드 시에 있어서의 칩 떨어짐 등의 문제를 더 바람직하게 방지할 수 있다.The tensile modulus of elasticity of the intermediate layer at 23°C is preferably 0.05 MPa to 10 MPa, more preferably 0.1 MPa to 5 MPa, and still more preferably 0.2 MPa to 3 MPa. Within this range, in addition to employing a specific material as the material constituting the intermediate layer, problems such as chip dropping during backgrinding can be more preferably prevented.
D. 점착제층D. Adhesive layer
상기 점착제층은, 임의의 적절한 점착제에 의해 구성될 수 있다. 점착제로서는, 예를 들어 아크릴계 점착제, 고무계 점착제, 실리콘계 점착제, 폴리비닐에테르계 점착제 등을 들 수 있다. 상기 점착제는, 열경화형 점착제, 활성 에너지선 경화형 점착제 등의 경화형 점착제여도 되고, 감압형 점착제여도 된다. 바람직하게는 경화형 점착제가 사용된다. 경화형 점착제를 사용하면, 백그라인드 시에는 반도체 웨이퍼를 양호하게 고정하고, 그 후, 박리가 필요한 때에는 점착제층을 경화시켜 용이하게 박리될 수 있는 백그라인드 테이프를 얻을 수 있다.The adhesive layer may be made of any suitable adhesive. Examples of the adhesive include acrylic adhesive, rubber adhesive, silicone adhesive, and polyvinyl ether adhesive. The adhesive may be a curing adhesive such as a thermosetting adhesive or an active energy ray curing adhesive, or may be a pressure sensitive adhesive. Preferably a curable adhesive is used. By using a curable adhesive, it is possible to obtain a backgrind tape that secures the semiconductor wafer well during backgrinding and can then be easily peeled off by curing the adhesive layer when peeling is necessary.
하나의 실시 형태에 있어서는, 상기 점착제로서, 아크릴계 점착제가 사용된다. 바람직하게는, 상기 아크릴계 점착제는, 경화형이다.In one embodiment, an acrylic adhesive is used as the adhesive. Preferably, the acrylic adhesive is a curable type.
아크릴계 점착제는 베이스 폴리머로서, 아크릴계 폴리머를 포함한다. 아크릴계 폴리머는, (메트)아크릴산알킬에스테르 유래의 구성 단위를 가질 수 있다. 상기 (메트)아크릴산알킬에스테르로서는, 예를 들어 (메트)아크릴산n-부틸, (메트)아크릴산이소부틸, (메트)아크릴산s-부틸, (메트)아크릴산t-부틸, (메트)아크릴산펜틸, (메트)아크릴산이소펜틸, (메트)아크릴산헥실, (메트)아크릴산헵틸, (메트)아크릴산옥틸, (메트)아크릴산2-에틸헥실, (메트)아크릴산이소옥틸, (메트)아크릴산노닐, (메트)아크릴산이소노닐, (메트)아크릴산데실, (메트)아크릴산이소데실, (메트)아크릴산운데실, (메트)아크릴산도데실, (메트)아크릴산트리데실, (메트)아크릴산테트라데실, (메트)아크릴산펜타데실, (메트)아크릴산헥사데실, (메트)아크릴산헵타데실, (메트)아크릴산옥타데실, (메트)아크릴산노나데실, (메트)아크릴산에이코실 등의 알킬기의 탄소수가 4∼20인 직쇄 또는 분지쇄상의 알킬기를 갖는 (메트)아크릴산알킬에스테르 등을 들 수 있다. 이들 중에서도, 피착체에 대한 접착성이나 접합 작업성의 관점에서, 알킬기의 탄소수가 5∼12인 (메트)아크릴산알킬에스테르가 바람직하고, 더 바람직하게는, 아크릴산n-부틸 또는 아크릴산2-에틸헥실(2EHA)이다. (메트)아크릴산알킬에스테르는, 1종만을 단독으로, 또는 2종 이상을 조합하여 사용할 수 있다.The acrylic adhesive contains an acrylic polymer as a base polymer. The acrylic polymer may have structural units derived from (meth)acrylic acid alkyl ester. Examples of the (meth)acrylic acid alkyl esters include n-butyl (meth)acrylate, isobutyl (meth)acrylate, s-butyl (meth)acrylate, t-butyl (meth)acrylate, pentyl (meth)acrylate, ( Isopentyl (meth)acrylate, hexyl (meth)acrylate, heptyl (meth)acrylate, octyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, isooctyl (meth)acrylate, nonyl (meth)acrylate, (meth)acrylic acid. Isononyl, decyl (meth)acrylate, isodecyl (meth)acrylate, undecyl (meth)acrylate, dodecyl (meth)acrylate, tridecyl (meth)acrylate, tetradecyl (meth)acrylate, penta (meth)acrylate Alkyl groups such as decyl, hexadecyl (meth)acrylate, heptadecyl (meth)acrylate, octadecyl (meth)acrylate, nonadecyl (meth)acrylate, and eicosyl (meth)acrylate are straight or branched and have 4 to 20 carbon atoms. (meth)acrylic acid alkyl esters having an alkyl group, etc. Among these, from the viewpoint of adhesion to the adherend and bonding workability, (meth)acrylic acid alkyl esters in which the alkyl group has 5 to 12 carbon atoms are preferable, and more preferably, n-butyl acrylate or 2-ethylhexyl acrylate ( 2EHA). (meth)acrylic acid alkyl esters can be used individually or in combination of two or more types.
상기 아크릴계 폴리머는, 필요에 따라서, 상기 (메트)아크릴산알킬에스테르와 공중합 가능한 그 밖의 모노머 유래의 구성 단위를 포함하고 있어도 된다. 그 밖의 모노머로서는, 하기의 모노머를 들 수 있다. 이들 모노머는, 1종만을 단독으로, 또는 2종 이상을 조합하여 사용할 수 있다.The acrylic polymer may, if necessary, contain structural units derived from other monomers copolymerizable with the (meth)acrylic acid alkyl ester. Other monomers include the following monomers. These monomers can be used individually or in combination of two or more types.
카르복시기 함유 모노머 및 그의 무수물: 예를 들어 아크릴산(AA), 메타크릴산(MAA), 크로톤산 등의 에틸렌성 불포화 모노카르복실산; 말레산, 이타콘산, 시트라콘산 등의 에틸렌성 불포화 디카르복실산 및 그의 무수물(무수 말레산, 무수 이타콘산 등);Carboxyl group-containing monomers and their anhydrides: for example, ethylenically unsaturated monocarboxylic acids such as acrylic acid (AA), methacrylic acid (MAA), and crotonic acid; Ethylenically unsaturated dicarboxylic acids such as maleic acid, itaconic acid, and citraconic acid, and their anhydrides (maleic anhydride, itaconic anhydride, etc.);
수산기 함유 모노머: 예를 들어 2-히드록시에틸(메트)아크릴레이트, 2-히드록시프로필(메트)아크릴레이트, 3-히드록시프로필(메트)아크릴레이트, 2-히드록시부틸(메트)아크릴레이트 등의 히드록시알킬(메트)아크릴레이트류; 비닐알코올, 알릴알코올 등의 불포화 알코올류; 2-히드록시에틸비닐에테르, 4-히드록시부틸비닐에테르, 디에틸렌글리콜모노비닐에테르 등의 에테르계 화합물;Hydroxyl group-containing monomers: e.g. 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 3-hydroxypropyl (meth)acrylate, 2-hydroxybutyl (meth)acrylate hydroxyalkyl (meth)acrylates such as; unsaturated alcohols such as vinyl alcohol and allyl alcohol; Ether compounds such as 2-hydroxyethyl vinyl ether, 4-hydroxybutyl vinyl ether, and diethylene glycol monovinyl ether;
아미노기 함유 모노머: 예를 들어 아미노에틸(메트)아크릴레이트, N,N-디메틸아미노에틸(메트)아크릴레이트, t-부틸아미노에틸(메트)아크릴레이트;Amino group-containing monomers: for example, aminoethyl (meth)acrylate, N,N-dimethylaminoethyl (meth)acrylate, t-butylaminoethyl (meth)acrylate;
에폭시기 함유 모노머: 예를 들어 글리시딜(메트)아크릴레이트, 메틸글리시딜(메트)아크릴레이트, 알릴글리시딜에테르;Epoxy group-containing monomers: for example, glycidyl (meth)acrylate, methylglycidyl (meth)acrylate, allyl glycidyl ether;
시아노기 함유 모노머: 예를 들어 아크릴로니트릴, 메타크릴로니트릴;Monomers containing cyano groups: for example acrylonitrile, methacrylonitrile;
케토기 함유 모노머: 예를 들어 디아세톤(메트)아크릴아미드, 디아세톤(메트)아크릴레이트, 비닐메틸케톤, 비닐에틸케톤, 알릴아세토아세테이트, 비닐아세토아세테이트;Keto group-containing monomers: for example, diacetone (meth)acrylamide, diacetone (meth)acrylate, vinyl methyl ketone, vinyl ethyl ketone, allyl aceto acetate, vinyl aceto acetate;
질소 원자 함유 환을 갖는 모노머: 예를 들어 N-비닐-2-피롤리돈, N-메틸비닐피롤리돈, N-비닐피리딘, N-비닐피페리돈, N-비닐피리미딘, N-비닐피페라진, N-비닐피라진, N-비닐피롤, N-비닐이미다졸, N-비닐옥사졸, N-비닐모르폴린, N-비닐카프로락탐, N-(메트)아크릴로일모르폴린;Monomers with rings containing nitrogen atoms: for example N-vinyl-2-pyrrolidone, N-methylvinylpyrrolidone, N-vinylpyridine, N-vinylpiperidone, N-vinylpyrimidine, N-vinylpipe Razine, N-vinylpyrazine, N-vinylpyrrole, N-vinylimidazole, N-vinyloxazole, N-vinylmorpholine, N-vinylcaprolactam, N-(meth)acryloylmorpholine;
알콕시실릴기 함유 모노머: 예를 들어 3-(메트)아크릴옥시프로필트리메톡시실란, 3-(메트)아크릴옥시프로필트리에톡시실란, 3-(메트)아크릴옥시프로필메틸디메톡시실란, 3-(메트)아크릴옥시프로필메틸디에톡시실란;Monomers containing alkoxysilyl groups: for example 3-(meth)acryloxypropyltrimethoxysilane, 3-(meth)acryloxypropyltriethoxysilane, 3-(meth)acryloxypropylmethyldimethoxysilane, 3- (meth)acryloxypropylmethyldiethoxysilane;
이소시아네이트기 함유 모노머: (메트)아크릴로일이소시아네이트, 2-(메트)아크릴로일옥시에틸이소시아네이트, m-이소프로페닐-α,α-디메틸벤질이소시아네이트.Isocyanate group-containing monomers: (meth)acryloylisocyanate, 2-(meth)acryloyloxyethylisocyanate, m-isopropenyl-α,α-dimethylbenzylisocyanate.
상기 아크릴계 폴리머중, 상기 그 밖의 모노머 유래의 구성 단위의 함유 비율은, 아크릴계 폴리머 100중량부에 대해, 50중량부 미만이고, 보다 바람직하게는 2중량부∼40중량부이고, 더욱 바람직하게는 5중량부∼30중량부이다.In the acrylic polymer, the content ratio of the structural units derived from the other monomers is less than 50 parts by weight, more preferably 2 parts by weight to 40 parts by weight, and even more preferably 5 parts by weight, based on 100 parts by weight of the acrylic polymer. It ranges from 30 parts by weight to 30 parts by weight.
상기 아크릴계 폴리머의 중량 평균 분자량은, 바람직하게는 20만∼300만이고, 보다 바람직하게는 25만∼150만이다.The weight average molecular weight of the acrylic polymer is preferably 200,000 to 3 million, and more preferably 250,000 to 1.5 million.
상기 점착제는, 임의의 적절한 첨가제를 더 포함하고 있어도 된다. 상기 첨가제로서는, 예를 들어 광 중합 개시제, 가교제, 가소제, 점착성 부여제, 노화 방지제, 충전제, 착색제, 대전 방지제, 계면 활성제 등을 들 수 있다. 상기 첨가제는 단독으로 사용해도 되고, 2종 이상 조합하여 사용해도 된다. 2종 이상의 첨가제를 사용하는 경우, 1종씩 첨가해도 되고, 2종 이상의 첨가제를 동시에 첨가해도 된다. 상기 첨가제의 배합량은, 임의의 적절한 양으로 설정될 수 있다.The adhesive may further contain any appropriate additives. Examples of the additive include a photopolymerization initiator, crosslinking agent, plasticizer, tackifier, anti-aging agent, filler, colorant, antistatic agent, surfactant, etc. The above additives may be used individually or in combination of two or more types. When two or more types of additives are used, they may be added one by one, or two or more types of additives may be added simultaneously. The mixing amount of the additive may be set to any appropriate amount.
하나의 실시 형태에 있어서는, 상기 점착제는, 광 중합 개시제를 더 포함한다. 광 중합 개시제로서는, 임의의 적절한 개시제를 사용할 수 있다. 광 중합 개시제로서는, 예를 들어 에틸2,4,6-트리메틸벤질페닐포스피네이트, (2,4,6-트리메틸벤조일)-페닐포스핀옥시드 등의 아실포스핀옥시드계 광 개시제; 4-(2-히드록시에톡시)페닐(2-히드록시-2-프로필)케톤, α-히드록시-α,α'-디메틸아세토페논, 2-메틸-2-히드록시프로피오페논, 1-히드록시시클로헥실페닐케톤 등의 α-케톨계 화합물; 메톡시아세토페논, 2,2-디메톡시-2-페닐아세토페논, 2,2-디에톡시아세토페논, 2-메틸-1-[4-(메틸티오)-페닐]-2-모르폴리노프로판-1 등의 아세토페논계 화합물; 벤조인에틸에테르, 벤조인이소프로필에테르, 아니소인메틸에테르 등의 벤조인에테르계 화합물; 벤질디메틸케탈 등의 케탈계 화합물; 2-나프탈렌술포닐클로라이드 등의 방향족 술포닐클로라이드계 화합물; 1-페논-1,1-프로판디온-2-(o-에톡시카르보닐)옥심 등의 광 활성 옥심계 화합물; 벤조페논, 벤조일벤조산, 3,3'-디메틸-4-메톡시벤조페논 등의 벤조페논계 화합물; 티오크산톤, 2-클로로티오크산톤, 2-메틸티오크산톤, 2,4-디메틸티오크산톤, 이소프로필티오크산톤, 2,4-디클로로티오크산톤, 2,4-디에틸티오크산톤, 2,4-디이소프로필티오크산톤 등의 티오크산톤계 화합물; 캄포퀴논; 할로겐화 케톤; 아실포스포네이트 등을 들 수 있다. 그 중에서도 바람직하게는, 아실포스핀옥시드계 광 개시제이다. 광 중합 개시제의 사용량은, 아크릴계 폴리머 100중량부에 대해, 바람직하게는 1중량부∼20중량부이고, 보다 바람직하게는 2중량부∼15중량부이고, 더욱 바람직하게는 3중량부∼10중량부이다.In one embodiment, the adhesive further contains a photopolymerization initiator. As the photopolymerization initiator, any suitable initiator can be used. Examples of the photopolymerization initiator include acylphosphine oxide-based photoinitiators such as ethyl 2,4,6-trimethylbenzylphenylphosphinate and (2,4,6-trimethylbenzoyl)-phenylphosphine oxide; 4-(2-hydroxyethoxy)phenyl(2-hydroxy-2-propyl)ketone, α-hydroxy-α,α'-dimethylacetophenone, 2-methyl-2-hydroxypropiophenone, 1 -α-ketol-based compounds such as hydroxycyclohexylphenyl ketone; Methoxyacetophenone, 2,2-dimethoxy-2-phenylacetophenone, 2,2-diethoxyacetophenone, 2-methyl-1-[4-(methylthio)-phenyl]-2-morpholinopropane Acetophenone-based compounds such as -1; Benzoin ether-based compounds such as benzoin ethyl ether, benzoin isopropyl ether, and anisoin methyl ether; Ketal-based compounds such as benzyldimethylketal; aromatic sulfonyl chloride-based compounds such as 2-naphthalenesulfonyl chloride; Photoactive oxime compounds such as 1-phenone-1,1-propanedione-2-(o-ethoxycarbonyl)oxime; Benzophenone-based compounds such as benzophenone, benzoylbenzoic acid, and 3,3'-dimethyl-4-methoxybenzophenone; Thioxanthone, 2-chlorothioxanthone, 2-methylthioxanthone, 2,4-dimethylthioxanthone, isopropylthioxanthone, 2,4-dichlorothioxanthone, 2,4-diethylthioxanthone Thioxanthone-based compounds such as acidthone and 2,4-diisopropylthioxanthone; camphorquinone; halogenated ketones; Acylphosphonate etc. are mentioned. Among these, an acylphosphine oxide-based photoinitiator is preferable. The amount of the photopolymerization initiator used is preferably 1 part by weight to 20 parts by weight, more preferably 2 parts by weight to 15 parts by weight, and still more preferably 3 parts by weight to 10 parts by weight, based on 100 parts by weight of the acrylic polymer. It is wealth.
하나의 실시 형태에 있어서는, 상기 점착제는, 가교제를 더 포함한다. 상기 가교제로서는, 임의의 적절한 가교제를 사용할 수 있다. 예를 들어, 이소시아네이트계 가교제, 에폭시계 가교제, 멜라민계 가교제, 과산화물계 가교제, 요소계 가교제, 금속 알콕시드계 가교제, 금속 킬레이트계 가교제, 금속염계 가교제, 카르보디이미드계 가교제, 옥사졸린계 가교제, 아지리딘계 가교제, 아민계 가교제 등을 들 수 있다. 가교제는 1종만을 사용해도 되고, 2종 이상 조합하여 사용해도 된다. 또한, 가교제의 사용량은, 사용 용도에 따라서 임의의 적절한 값으로 설정될 수 있다. 가교제의 사용량은, 아크릴계 폴리머 100중량부에 대해, 바람직하게는 0.1중량부∼10중량부이고, 보다 바람직하게는 0.5중량부∼5중량부이고, 더욱 바람직하게는 1중량부∼3중량부이다.In one embodiment, the adhesive further contains a crosslinking agent. As the crosslinking agent, any suitable crosslinking agent can be used. For example, isocyanate-based crosslinking agents, epoxy-based crosslinking agents, melamine-based crosslinking agents, peroxide-based crosslinking agents, urea-based crosslinking agents, metal alkoxide-based crosslinking agents, metal chelate-based crosslinking agents, metal salt-based crosslinking agents, carbodiimide-based crosslinking agents, oxazoline-based crosslinking agents, and ajiri. Examples include dine-based crosslinking agents and amine-based crosslinking agents. Only one type of crosslinking agent may be used, or two or more types may be used in combination. Additionally, the amount of crosslinking agent used can be set to any appropriate value depending on the intended use. The amount of the crosslinking agent used is preferably 0.1 parts by weight to 10 parts by weight, more preferably 0.5 parts by weight to 5 parts by weight, and even more preferably 1 part by weight to 3 parts by weight, based on 100 parts by weight of the acrylic polymer. .
하나의 실시 형태에 있어서는, 이소시아네이트계 가교제가 바람직하게 사용된다. 이소시아네이트계 가교제는, 다종의 관능기와 반응할 수 있는 점에서 바람직하다. 상기 이소시아네이트계 가교제의 구체예로서는, 부틸렌디이소시아네이트, 헥사메틸렌디이소시아네이트 등의 저급 지방족 폴리이소시아네이트류; 시클로펜틸렌디이소시아네이트, 시클로헥실렌디이소시아네이트, 이소포론디이소시아네이트 등의 지환족 이소시아네이트류; 2,4-톨릴렌디이소시아네이트, 4,4'-디페닐메탄디이소시아네이트, 크실릴렌디이소시아네이트 등의 방향족 이소시아네이트류; 트리메틸올프로판/톨릴렌디이소시아네이트 3량체 부가물(닛본 폴리우레탄 고교사 제조, 상품명 「코로네이트 L」), 트리메틸올프로판/헥사메틸렌디이소시아네이트 3량체 부가물(닛본 폴리우레탄 고교사 제조, 상품명 「코로네이트 HL」), 헥사메틸렌디이소시아네이트의 이소시아누레이트체(닛본 폴리우레탄 고교사 제조, 상품명 「코로네이트 HX」) 등의 이소시아네이트 부가물; 등을 들 수 있다. 바람직하게는, 이소시아네이트기를 3개 이상 갖는 가교제가 사용된다.In one embodiment, an isocyanate-based crosslinking agent is preferably used. Isocyanate-based crosslinking agents are preferred because they can react with a variety of functional groups. Specific examples of the isocyanate-based crosslinking agent include lower aliphatic polyisocyanates such as butylene diisocyanate and hexamethylene diisocyanate; Alicyclic isocyanates such as cyclopentylene diisocyanate, cyclohexylene diisocyanate, and isophorone diisocyanate; Aromatic isocyanates such as 2,4-tolylene diisocyanate, 4,4'-diphenylmethane diisocyanate, and xylylene diisocyanate; Trimethylolpropane/tolylene diisocyanate trimer adduct (manufactured by Nippon Polyurethane Kogyo, brand name “Coronate L”), trimethylolpropane/hexamethylene diisocyanate trimer adduct (manufactured by Nippon Polyurethane Kogyo, brand name “Coronate”) Isocyanate adducts such as "Nate HL") and the isocyanurate form of hexamethylene diisocyanate (manufactured by Nippon Polyurethane Kogyo Co., Ltd., brand name "Coronate HX"); etc. can be mentioned. Preferably, a crosslinking agent having three or more isocyanate groups is used.
상기 점착제층의 두께는, 바람직하게는 1㎛∼50㎛이고, 보다 바람직하게는 1㎛∼25㎛이고, 더욱 바람직하게는 1㎛∼5㎛이다. 이러한 범위라면, 백그라인드 시에 있어서의 칩 떨어짐 등의 문제를 더 바람직하게 방지할 수 있다.The thickness of the adhesive layer is preferably 1 μm to 50 μm, more preferably 1 μm to 25 μm, and even more preferably 1 μm to 5 μm. Within this range, problems such as chip dropping during backgrinding can be more preferably prevented.
상기 점착제층의 23℃에 있어서의 저장 탄성률 E'은, 바람직하게는 15㎫∼200㎫이고, 보다 바람직하게는 20㎫∼150㎫이고, 더욱 바람직하게는 30㎫∼120㎫이다. 이러한 범위이면, 요철면에 대한 추종성이 특히 우수한 백그라인드 테이프를 얻을 수 있다.The storage modulus E' of the adhesive layer at 23°C is preferably 15 MPa to 200 MPa, more preferably 20 MPa to 150 MPa, and still more preferably 30 MPa to 120 MPa. Within this range, a backgrind tape with particularly excellent followability to uneven surfaces can be obtained.
상기 점착제층의 23℃에 있어서의 인장 탄성률은, 바람직하게는 0.01㎫∼2㎫이고, 보다 바람직하게는 0.05㎫∼1㎫이고, 더욱 바람직하게는 0.1㎫∼0.5㎫이다. 이러한 범위이면, 백그라인드 시에 있어서의 칩 떨어짐 등의 문제를 더 바람직하게 방지할 수 있다. 또한, 점착제층이 경화형인 경우, 경화 전의 점착제층 인장 탄성률이 상기 범위인 것이 바람직하다.The tensile elastic modulus of the adhesive layer at 23°C is preferably 0.01 MPa to 2 MPa, more preferably 0.05 MPa to 1 MPa, and even more preferably 0.1 MPa to 0.5 MPa. Within this range, problems such as chip dropping during backgrinding can be more preferably prevented. Additionally, when the pressure-sensitive adhesive layer is a curable type, it is preferable that the tensile modulus of elasticity of the pressure-sensitive adhesive layer before curing is within the above range.
E. 백그라인드 테이프의 제조 방법E. Manufacturing method of backgrind tape
상기 백그라인드 테이프는, 임의의 적절한 방법에 의해 제조될 수 있다. 백그라인드 테이프는, 예를 들어 기재(제1 기재) 상에, 상기 중간층 형성용 조성물을 도공(도포, 건조)하여 중간층을 형성하고, 이어서 중간층 상에 상기 점착제를 도공(도포, 건조)하여 점착제층을 형성함으로써 얻어질 수 있다. 도공 방법으로서는, 바 코터 도공, 에어 나이프 도공, 그라비아 도공, 그라비아 리버스 도공, 리버스 롤 도공, 립 도공, 다이 도공, 딥 도공, 오프셋 인쇄, 플렉소 인쇄, 스크린 인쇄 등 다양한 방법을 채용할 수 있다. 또한, 점착제층 및 중간층 각각을, 별도로 박리 라이너 상에 형성한 후, 그것을 전사하여 접합하는 방법 등을 채용해도 된다.The backgrind tape can be manufactured by any suitable method. Backgrind tape, for example, forms an intermediate layer by coating (applying, drying) the composition for forming an intermediate layer on a substrate (first substrate), and then applying (applying, drying) the adhesive on the intermediate layer to form an adhesive. It can be obtained by forming a layer. As the coating method, various methods such as bar coater coating, air knife coating, gravure coating, gravure reverse coating, reverse roll coating, lip coating, die coating, dip coating, offset printing, flexo printing, and screen printing can be adopted. Additionally, a method of forming each of the adhesive layer and the intermediate layer separately on a release liner and then transferring and bonding them may be adopted.
[실시예][Example]
이하, 실시예에 의해 본 발명을 구체적으로 설명하지만, 본 발명은 이들 실시예에 의해 한정되는 것은 아니다. 실시예에 있어서의 시험 및 평가 방법은 이하와 같다. 또한, 특별히 명기하지 않는 한, 「부」 및 「%」는 중량 기준이다.Hereinafter, the present invention will be specifically described by way of examples, but the present invention is not limited to these examples. The test and evaluation methods in the examples are as follows. In addition, unless otherwise specified, “part” and “%” are based on weight.
(1) 점착력(1) Adhesion
백그라인드 테이프를 폭 20㎜의 직사각형으로 절단하여, 샘플을 제작하였다.The backgrind tape was cut into a rectangle with a width of 20 mm to produce a sample.
상기 샘플에 대해, JIS Z 0237에 준거하여, 하기의 조건에서 180° 박리 시험을 행하여 백그라인드 테이프의 점착력을 측정하였다.For the above sample, a 180° peel test was performed under the following conditions in accordance with JIS Z 0237 to measure the adhesive force of the backgrind tape.
<180° 박리 시험><180° peel test>
피착체: Si 미러 웨이퍼Adhere: Si mirror wafer
반복 시험 수: 3회Number of repeat tests: 3
온도: 23℃Temperature: 23℃
박리 각도: 180도Peeling angle: 180 degrees
박리 속도: 300㎜/minPeeling speed: 300㎜/min
초기 길이(척 간격): 150㎜Initial length (chuck spacing): 150 mm
(2) 크랙(칩 떨어짐) 평가(2) Crack (chip falling) evaluation
12인치 Si 미러 웨이퍼(두께: 775㎛)의 편면에, 하기의 조건에서 백그라인드 테이프를 접착하고, 이어서 백그라인드 테이프의 접착면과는 반대측의 면으로부터, 하기의 조건에서 스텔스 다이싱을 행하고, 8㎜×12㎜의 소편을 680개 얻을 것을 예정하여, 미러 웨이퍼의 내부에 개질층을 형성시켰다.A backgrind tape is adhered to one side of a 12-inch Si mirror wafer (thickness: 775 μm) under the following conditions, and then stealth dicing is performed from the side opposite to the adhesive side of the backgrind tape under the following conditions, With the intention of obtaining 680 small pieces of 8 mm x 12 mm, a modified layer was formed inside the mirror wafer.
이어서, 하기의 조건에서, 미러 웨이퍼의 두께가 25㎛가 되도록, 백그라인드를 행하였다.Next, backgrinding was performed under the following conditions so that the thickness of the mirror wafer was 25 μm.
이어서, 인라인 반송으로, 백그라인드 후의 미러 웨이퍼를, 다이싱 테이프(닛토덴코사 제조, 상품명 「NLS-516P」) 및 링 프레임에 마운트하였다.Next, by in-line conveyance, the mirror wafer after backgrinding was mounted on a dicing tape (manufactured by Nitto Denko, brand name "NLS-516P") and a ring frame.
그 후, 다이싱 테이프 너머로 미러 웨이퍼 표면을 광학 현미경(×200)으로 관찰하여, 크랙 발생 유무를 확인하고, 전체 소편 수(680개)에 대한 크랙 발생 수(크랙이 발생한 소편의 수)의 비율에 의해, 크랙 평가를 행하였다.Afterwards, the surface of the mirror wafer was observed through an optical microscope (×200) through the dicing tape to confirm the presence or absence of cracks, and the ratio of the number of cracks (number of small pieces with cracks) to the total number of small pieces (680). Accordingly, crack evaluation was performed.
<스텔스 다이싱 조건><Stealth dicing conditions>
장치: 디스코사 제조, DFL7361 SDE06Device: manufactured by Disco, DFL7361 SDE06
처리 조건: BHC, Non BHCProcessing conditions: BHC, Non BHC
<백그라인드 테이프 첩부 조건><Conditions for attaching backgrind tape>
장치: 닛토 세이키 DR-3000IIIDevice: Nitto Seiki DR-3000III
압력: 0.3㎫Pressure: 0.3 MPa
온도: 실온Temperature: Room temperature
속도: 10㎜/minSpeed: 10㎜/min
<백그라인드 조건><Background conditions>
장치: 디스코사 제조, DGP8761 DFM2800 인라인 그라인더Device: DGP8761 DFM2800 inline grinder manufactured by Disco
Z1(#360), Z2(#2000)로 박막 후, GDP(게터링 DP 처리)를 실시After thinning with Z1 (#360) and Z2 (#2000), GDP (gettering DP treatment) was performed.
(3) 저장 탄성률(3) Storage modulus
중간층 및 점착제층의 저장 탄성률 E'을, 나노 인덴테이션법에 의해 하기 조건에서 측정하였다.The storage elastic modulus E' of the middle layer and the adhesive layer was measured under the following conditions by the nano-indentation method.
<저장 탄성률 E' 측정><Measurement of storage modulus E'>
장치: Hysitron Inc. 제조 Tribo IndenterApparatus: Hysitron Inc. Manufacturing Tribo Indenter
사용 압자: Berkovich(삼각뿔형)Indenter used: Berkovich (triangular pyramid type)
측정 방법: 단일 압입 측정Measurement method: single indentation measurement
측정 온도: 23℃Measurement temperature: 23℃
압입 깊이 설정: 약 300㎚Indentation depth setting: approximately 300㎚
압입 속도: 약 10㎚/secIndentation speed: approximately 10㎚/sec
주파수: 100㎐Frequency: 100Hz
측정 분위기: 공기 중Measurement atmosphere: in air
시료 사이즈: 약 1㎝×약 1㎝Sample size: approximately 1 cm × approximately 1 cm
[제조예 1] 중간층 형성용 조성물 M1의 조제[Preparation Example 1] Preparation of composition M1 for forming an intermediate layer
2에틸헥실아크릴레이트 30중량부와, 메틸아크릴레이트 70중량부와, 아크릴산 10중량부와, 아조비스이소부티로니트릴 0.1중량부와, 아세트산에틸 100중량부를 혼합하여 얻어진 혼합물을, 질소 분위기하, 60℃에서 6시간 중합하여, 중량 평균 분자량·50만의 아크릴계 수지 M1을 얻었다.A mixture obtained by mixing 30 parts by weight of 2-ethylhexyl acrylate, 70 parts by weight of methyl acrylate, 10 parts by weight of acrylic acid, 0.1 part by weight of azobisisobutyronitrile, and 100 parts by weight of ethyl acetate was placed under a nitrogen atmosphere. Polymerization was performed at 60°C for 6 hours to obtain acrylic resin M1 with a weight average molecular weight of 500,000.
상기 조작에 의해 얻어진 중합액을 중간층 형성용 조성물 M1로 하였다.The polymerization liquid obtained through the above operation was used as composition M1 for forming an intermediate layer.
[제조예 2] 중간층 형성용 조성물 M2의 조제[Preparation Example 2] Preparation of composition M2 for forming an intermediate layer
부틸아크릴레이트 50중량부와, 에틸아크릴레이트 50중량부와, 아크릴산 5중량부와, 아조비스이소부티로니트릴 0.1중량부와, 아세트산에틸 100중량부를 혼합하여 얻어진 혼합물을, 질소 분위기하, 60℃에서 6시간 중합하여, 중량 평균 분자량 65만의 아크릴계 수지 M2를 얻었다.A mixture obtained by mixing 50 parts by weight of butylacrylate, 50 parts by weight of ethyl acrylate, 5 parts by weight of acrylic acid, 0.1 part by weight of azobisisobutyronitrile, and 100 parts by weight of ethyl acetate was heated at 60°C under a nitrogen atmosphere. After polymerization for 6 hours, acrylic resin M2 with a weight average molecular weight of 650,000 was obtained.
상기 조작에 의해 얻어진 중합액을 중간층 형성용 조성물 M2로 하였다.The polymerization solution obtained through the above operation was used as composition M2 for forming an intermediate layer.
[제조예 3] 중간층 형성용 조성물 M3의 조제[Preparation Example 3] Preparation of composition M3 for forming an intermediate layer
트리메틸올프로판/톨릴렌디이소시아네이트의 어덕트체(닛본 폴리우레탄 고교사 제조, 상품명 「코로네이트 L」) 1중량부와, 폴리에테르 폴리올(ADEKA사 제조, 상품명 「아데카 폴리에테르 EDP-300」) 0.05중량부를 혼합하고, 이들 화합물이 반응하여 생성된 반응물을 포함하는 조성물을 얻었다.1 part by weight of an adduct of trimethylolpropane/tolylene diisocyanate (manufactured by Nippon Polyurethane Industries, brand name “Coronate L”), and polyether polyol (manufactured by ADEKA, brand name “Adeka Polyether EDP-300”) 0.05 parts by weight were mixed, and a composition containing the reactant produced by reacting these compounds was obtained.
얻어진 조성물 1.05중량부를, 제조예 1에서 조제한 중간층 형성용 조성물 M1(아크릴계 수지 M1 함유량 100중량부)에 첨가하여, 중간층 형성용 조성물 M3을 조제하였다.1.05 parts by weight of the obtained composition was added to the composition M1 for forming an intermediate layer (acrylic resin M1 content of 100 parts by weight) prepared in Production Example 1, to prepare a composition M3 for forming an intermediate layer.
또한, 상기 반응물은 아크릴계 수지를 가교하는 것은 아니다.Additionally, the above reactant does not crosslink the acrylic resin.
[제조예 4] 중간층 형성용 조성물 M1'의 조제[Preparation Example 4] Preparation of composition M1' for forming an intermediate layer
상기 중간층 형성용 조성물 M1에, 아크릴계 수지 100중량부에 대해 에폭시계 가교제(미쓰비시 가스사 제조, 상품명 「테트라드 C」) 1중량부를 첨가하여, 중간층 형성용 조성물 M1'을 얻었다.To the composition M1 for forming an intermediate layer, 1 part by weight of an epoxy-based crosslinking agent (manufactured by Mitsubishi Gas Corporation, brand name “Tetrad C”) was added to 100 parts by weight of acrylic resin, thereby obtaining composition M1' for forming an intermediate layer.
[제조예 5] 점착제 A1의 조제[Preparation Example 5] Preparation of adhesive A1
2에틸헥실아크릴레이트 100중량부와, 아크릴로일모르폴린 26중량부와, 히드록시에틸아크릴레이트 18중량부와, 2-메타크릴로일옥시에틸이소시아네이트 12중량부와, 아조비스이소부티로니트릴 0.2중량부와, 아세트산에틸 500중량부를 혼합하여 얻어진 혼합물을, 질소 분위기하, 60℃에서 24시간 중합하여, 중량 평균 분자량 90만의 아크릴계 폴리머 A를 얻었다.100 parts by weight of 2ethylhexyl acrylate, 26 parts by weight of acryloylmorpholine, 18 parts by weight of hydroxyethyl acrylate, 12 parts by weight of 2-methacryloyloxyethyl isocyanate, and azobisisobutyronitrile The mixture obtained by mixing 0.2 parts by weight with 500 parts by weight of ethyl acetate was polymerized at 60°C for 24 hours in a nitrogen atmosphere to obtain acrylic polymer A with a weight average molecular weight of 900,000.
상기 조작에 의해 얻어진 중합액(아크릴계 폴리머 A 함유량: 100중량부)에, 광 중합 개시제(IGM Resines사 제조, 상품명 「OmniradTPO」) 7중량부와, 이소시아네이트계 가교제(닛본 폴리우레탄 고교사 제조, 상품명 「코로네이트 C」) 2중량부를 첨가하여, 점착제 A1을 얻었다.To the polymerization solution obtained through the above operation (acrylic polymer A content: 100 parts by weight), 7 parts by weight of a photopolymerization initiator (manufactured by IGM Resines, brand name "OmniradTPO") and an isocyanate-based crosslinking agent (manufactured by Nippon Polyurethane Kogyo Co., Ltd., brand name) 2 parts by weight of “Coronate C”) was added to obtain adhesive A1.
[제조예 6] 점착제 A2의 조제[Preparation Example 6] Preparation of adhesive A2
광 중합 개시제의 배합량을 3중량부로 한 것 이외에는, 제조예 5와 마찬가지로 하여, 점착제 A2를 얻었다.Adhesive A2 was obtained in the same manner as in Production Example 5, except that the compounding amount of the photopolymerization initiator was 3 parts by weight.
[제조예 7] 점착제 A2'의 조제[Preparation Example 7] Preparation of adhesive A2'
광 중합 개시제의 배합량을 3중량부로 하고, 가교 보조제(ADEKA사 제조, 상품명 「아데카 폴리에테르 EDP-300」)를 더 첨가한 것 이외에는, 제조예 5와 마찬가지로 하여, 점착제 A2'을 얻었다.Adhesive A2' was obtained in the same manner as in Production Example 5, except that the amount of the photopolymerization initiator was set to 3 parts by weight and a crosslinking aid (manufactured by ADEKA, brand name "Adeka Polyether EDP-300") was further added.
[제조예 8] 점착제 B1의 조제[Preparation Example 8] Preparation of adhesive B1
부틸아크릴레이트 100중량부와, 에틸아크릴레이트 78중량부와, 히드록시에틸 아크릴레이트 40중량부와, 2-메타크릴로일옥시에틸이소시아네이트 44중량부와, 아조비스이소부티로니트릴 0.2중량부와, 아세트산에틸 500중량부를 혼합하여 얻어진 혼합물을, 질소 분위기하, 60℃에서 24시간 중합하여, 중량 평균 분자량 50만의 아크릴계 폴리머 B를 얻었다.100 parts by weight of butylacrylate, 78 parts by weight of ethyl acrylate, 40 parts by weight of hydroxyethyl acrylate, 44 parts by weight of 2-methacryloyloxyethyl isocyanate, and 0.2 parts by weight of azobisisobutyronitrile , and 500 parts by weight of ethyl acetate were polymerized at 60°C for 24 hours in a nitrogen atmosphere to obtain acrylic polymer B with a weight average molecular weight of 500,000.
상기 조작에 의해 얻어진 중합액(아크릴계 폴리머 B 함유량: 100중량부)에, 광 중합 개시제(IGM Resines사 제조, 상품명 「OmniradTPO」) 3중량부와, 이소시아네이트계 가교제(닛본 폴리우레탄 고교사 제조, 상품명 「코로네이트 C」) 2.5중량부를 첨가하여, 점착제 B1을 얻었다.To the polymerization solution (acrylic polymer B content: 100 parts by weight) obtained by the above operation, 3 parts by weight of a photopolymerization initiator (manufactured by IGM Resines, brand name "OmniradTPO") and an isocyanate-based crosslinking agent (manufactured by Nippon Polyurethane Kogyo Co., Ltd., brand name) 2.5 parts by weight of “Coronate C”) was added to obtain adhesive B1.
[제조예 9] 점착제 B2의 조제[Preparation Example 9] Preparation of adhesive B2
가교제의 배합량을 0.2중량부로 한 것 이외에는, 제조예 8과 마찬가지로 하여, 점착제 B2를 얻었다.Adhesive B2 was obtained in the same manner as in Production Example 8, except that the crosslinking agent was added to 0.2 parts by weight.
[실시예 1][Example 1]
제1 기재로서의 폴리에틸렌테레프탈레이트 기재(도레이사 제조, 상품명 「S105 #50」, 두께: 50㎛)와, 제2 기재로서의 폴리에틸렌 기재(후타무라 가가쿠사 제조, 상품명 「LL-XMTN #50」, 두께: 50㎛)를, 접착제(두께: 2㎛)를 통해 적층하였다.A polyethylene terephthalate substrate as the first substrate (manufactured by Toray Industries, brand name “S105 #50”, thickness: 50 μm), and a polyethylene substrate as a second substrate (manufactured by Futamura Chemical Company, brand name “LL-XMTN #50”, thickness: : 50㎛) was laminated through an adhesive (thickness: 2㎛).
이어서, 제1 기재 상에, 중간층 형성용 조성물 M1을 도공하여, 두께 28㎛의 중간층을 형성하였다. 그 후, 중간층 상에, 점착제 A1을 도공하여, 두께 5㎛의 점착제층을 형성하였다.Next, the composition M1 for intermediate layer formation was applied on the first substrate to form an intermediate layer with a thickness of 28 μm. After that, adhesive A1 was applied on the middle layer to form an adhesive layer with a thickness of 5 μm.
상기한 바와 같이 하여, 백그라인드 테이프 A를 얻었다. 얻어진 백그라인드 테이프 A를 상기 평가에 제공하였다. 결과를 표 1에 나타낸다.As described above, backgrind tape A was obtained. The obtained backgrind tape A was subjected to the above evaluation. The results are shown in Table 1.
[실시예 2][Example 2]
중간층 형성용 조성물 M1 대신에, 중간층 형성용 조성물 M2를 사용하여 중간층(두께: 28㎛)을 형성한 것 이외에는, 실시예 1과 마찬가지로 하여, 백그라인드 테이프 B를 얻었다. 얻어진 백그라인드 테이프 B를 상기 평가에 제공하였다. 결과를 표 1에 나타낸다.Backgrind tape B was obtained in the same manner as in Example 1, except that the intermediate layer (thickness: 28 μm) was formed using the intermediate layer forming composition M2 instead of the intermediate layer forming composition M1. The obtained backgrind tape B was subjected to the above evaluation. The results are shown in Table 1.
[실시예 3][Example 3]
중간층의 두께를 18㎛로 하고, 또한 점착제 A1 대신에 점착제 A2를 사용하여 점착제층(두께: 5㎛)을 형성한 것 이외에는, 실시예 1과 마찬가지로 하여 백그라인드 테이프 C를 얻었다. 얻어진 백그라인드 테이프 C를 상기 평가에 제공하였다. 결과를 표 1에 나타낸다.Backgrind tape C was obtained in the same manner as in Example 1, except that the thickness of the middle layer was 18 µm and the adhesive layer (thickness: 5 µm) was formed using adhesive A2 instead of adhesive A1. The obtained backgrind tape C was subjected to the above evaluation. The results are shown in Table 1.
[실시예 4][Example 4]
중간층 형성용 조성물 M1 대신에, 중간층 형성용 조성물 M3을 사용한 것, 중간층의 두께를 18㎛로 한 것, 및 점착제 A1 대신에 점착제 A2'을 사용하여 점착제층(두께: 5㎛)을 형성한 것 이외에는, 실시예 1과 마찬가지로 하여 백그라인드 테이프 D를 얻었다. 얻어진 백그라인드 테이프 D를 상기 평가에 제공하였다. 결과를 표 1에 나타낸다.An adhesive layer (thickness: 5 μm) was formed using composition M3 for intermediate layer formation instead of composition M1, the thickness of the intermediate layer was set to 18 ㎛, and adhesive A2' was used instead of adhesive A1. Other than that, backgrind tape D was obtained in the same manner as in Example 1. The obtained backgrind tape D was subjected to the above evaluation. The results are shown in Table 1.
[실시예 5][Example 5]
제1 기재로서의 폴리에틸렌테레프탈레이트 기재(도레이사 제조, 상품명 「S105 #50」, 두께: 50㎛) 상에 중간층 형성용 조성물 M1을 도공하여, 두께 25㎛의 중간층을 형성하였다. 그 후, 중간층 상에, 점착제 A1을 도공하여, 두께 5㎛의 점착제층을 형성하였다.Composition M1 for forming an intermediate layer was coated on a polyethylene terephthalate substrate (manufactured by Toray Industries, Ltd., brand name "S105 #50", thickness: 50 μm) as the first substrate, to form an intermediate layer with a thickness of 25 μm. After that, adhesive A1 was applied on the middle layer to form an adhesive layer with a thickness of 5 μm.
상기한 바와 같이 하여, 백그라인드 테이프 E를 얻었다. 얻어진 백그라인드 테이프 E를 상기 평가에 제공하였다. 결과를 표 1에 나타낸다.As described above, backgrind tape E was obtained. The obtained backgrind tape E was subjected to the above evaluation. The results are shown in Table 1.
[실시예 6][Example 6]
점착제 A1 대신에, 점착제 A2를 사용한 것 이외에는, 실시예 5와 마찬가지로 하여, 백그라인드 테이프 F를 얻었다. 얻어진 백그라인드 테이프 F를 상기 평가에 제공하였다. 결과를 표 1에 나타낸다.Backgrind tape F was obtained in the same manner as in Example 5, except that adhesive A2 was used instead of adhesive A1. The obtained backgrind tape F was subjected to the above evaluation. The results are shown in Table 1.
[비교예 1][Comparative Example 1]
제1 기재로서의 폴리에틸렌테레프탈레이트 기재(도레이사 제조, 상품명 「S105 #50」, 두께: 50㎛) 상에 점착제 A2를 도공하여, 두께 30㎛의 점착제층을 형성하였다.Adhesive A2 was applied on a polyethylene terephthalate substrate (manufactured by Toray Industries, Ltd., brand name "S105 #50", thickness: 50 μm) as the first substrate, to form an adhesive layer with a thickness of 30 μm.
상기한 바와 같이 하여, 백그라인드 테이프 G를 얻었다. 얻어진 백그라인드 테이프 G를 상기 평가에 제공하였다. 결과를 표 1에 나타낸다.As described above, backgrind tape G was obtained. The obtained backgrind tape G was subjected to the above evaluation. The results are shown in Table 1.
[비교예 2][Comparative Example 2]
점착제 A2 대신에, 점착제 B1을 사용한 것 이외에는, 비교예 1과 마찬가지로 하여 백그라인드 테이프 H를 얻었다. 백그라인드 테이프 H를 상기 평가에 제공하였다. 결과를 표 1에 나타낸다.Backgrind tape H was obtained in the same manner as in Comparative Example 1, except that adhesive B1 was used instead of adhesive A2. Backgrind tape H was submitted to the above evaluation. The results are shown in Table 1.
[비교예 3][Comparative Example 3]
점착제 A2 대신에, 점착제 B2를 사용한 것 이외에는, 비교예 1과 마찬가지로 하여, 백그라인드 테이프 J를 얻었다. 백그라인드 테이프 J를 상기 평가에 제공하였다. 결과를 표 1에 나타낸다.Backgrind tape J was obtained in the same manner as in Comparative Example 1, except that adhesive B2 was used instead of adhesive A2. Backgrind Tape J was provided for the above evaluation. The results are shown in Table 1.
[비교예 4][Comparative Example 4]
제1 기재로서의 폴리에틸렌테레프탈레이트 기재(도레이사 제조, 상품명 「S105 #50」, 두께: 50㎛) 상에 중간층 형성용 조성물 M1'을 도공하여, 두께 28㎛의 중간층을 형성하였다. 그 후, 중간층 상에 점착제 A2를 도공하여, 두께 5㎛의 점착제층을 형성하였다.Composition M1' for forming an intermediate layer was coated on a polyethylene terephthalate substrate (manufactured by Toray Industries, Ltd., brand name "S105 #50", thickness: 50 μm) as the first substrate, to form an intermediate layer with a thickness of 28 μm. After that, adhesive A2 was applied on the middle layer to form an adhesive layer with a thickness of 5 μm.
상기한 바와 같이 하여, 백그라인드 테이프 K를 얻었다. 얻어진 백그라인드 테이프 K를 상기 평가에 제공하였다. 결과를 표 1에 나타낸다.As described above, backgrind tape K was obtained. The obtained backgrind tape K was subjected to the above evaluation. The results are shown in Table 1.
[비교예 5][Comparative Example 5]
제1 기재로서의 폴리에틸렌테레프탈레이트 기재(도레이사 제조, 상품명 「루미러 ES10#75」, 두께: 75㎛) 상에 아크릴 우레탄 수지를 포함하는 중간층 형성용 조성물 M4를 도공하여, 두께 75㎛의 중간층을 형성하였다. 그 후, 중간층 상에 점착제 B2를 도공하여, 두께 50㎛의 점착제층을 형성하였다. 또한, 중간층 형성용 조성물 M4의 조제는 하기와 같이 행하였다.Composition M4 for forming an intermediate layer containing an acrylic urethane resin was coated on a polyethylene terephthalate substrate (manufactured by Toray Corporation, product name "Lumiror ES10#75", thickness: 75 ㎛) as the first substrate, to form an intermediate layer with a thickness of 75 ㎛. formed. After that, adhesive B2 was applied on the middle layer to form an adhesive layer with a thickness of 50 μm. In addition, the composition M4 for forming the intermediate layer was prepared as follows.
상기한 바와 같이 하여, 백그라인드 테이프 L을 얻었다. 얻어진 백그라인드 테이프 L을 상기 평가에 제공하였다. 결과를 표 1에 나타낸다.As described above, backgrind tape L was obtained. The obtained backgrind tape L was subjected to the above evaluation. The results are shown in Table 1.
<중간층 형성용 조성물 M4의 조제><Preparation of composition M4 for intermediate layer formation>
폴리테트라메틸렌에테르글리콜 70중량부와, tert-부틸아크릴레이트 50중량부와, 아크릴산 30중량부와, 부틸아크릴레이트 20중량부와, 이소시아네이트계 화합물(미쓰이 가가쿠사 제조, 상품명 「타케네이트 500」) 25중량부와, 아조비스이소부티로니트릴 0.1중량부와, 아세트산에틸 100중량부를 혼합하여 얻어진 혼합물을, 질소 분위기하, 60℃에서 6시간 중합하여 아크릴 우레탄 수지를 포함하는 중합액을 얻었다.70 parts by weight of polytetramethylene ether glycol, 50 parts by weight of tert-butylacrylate, 30 parts by weight of acrylic acid, 20 parts by weight of butylacrylate, and an isocyanate-based compound (manufactured by Mitsui Chemicals, brand name “Takenate 500”) The mixture obtained by mixing 25 parts by weight, 0.1 part by weight of azobisisobutyronitrile, and 100 parts by weight of ethyl acetate was polymerized at 60°C for 6 hours in a nitrogen atmosphere to obtain a polymerization solution containing an acrylic urethane resin.
상기 중합액에, 아크릴 우레탄 수지 100중량부에 대해 가교제(트리메틸올프로판트리아크릴레이트) 5중량부를 첨가하여, 중간층 형성용 조성물 M4를 얻었다.To the polymerization solution, 5 parts by weight of a crosslinking agent (trimethylolpropane triacrylate) was added to 100 parts by weight of acrylic urethane resin, and composition M4 for forming an intermediate layer was obtained.
10 : 점착제층
20 : 중간층
31 : 제1 기재
32 : 제2 기재
100 : 백그라인드 테이프10: Adhesive layer
20: middle layer
31: first base
32: second base material
100: Backgrind tape
Claims (8)
당해 중간층이 당해 제1 기재에 직접 배치되고, 또한 당해 점착제층이 당해 중간층에 직접 배치되고,
당해 중간층을 구성하는 재료가, 카르복실기를 갖고, 또한 가교되어 있지 않은 아크릴계 수지이며,
당해 점착제층을 Si 미러 웨이퍼에 접착시켰을 때의 초기 점착력이, 1N/20㎜∼30N/20㎜인, 백그라인드 테이프.An adhesive layer, an intermediate layer, and a first substrate are provided in this order,
The intermediate layer is disposed directly on the first substrate, and the adhesive layer is directly disposed on the intermediate layer,
The material constituting the intermediate layer is an acrylic resin that has a carboxyl group and is not crosslinked,
A backgrind tape having an initial adhesive force of 1 N/20 mm to 30 N/20 mm when the adhesive layer is adhered to a Si mirror wafer.
제2 기재를 더 구비하고,
당해 제2 기재가, 상기 제1 기재의 중간층과는 반대측에 배치되는, 백그라인드 테이프.According to paragraph 1,
Further comprising a second substrate,
A backgrind tape, wherein the second substrate is disposed on the opposite side to the intermediate layer of the first substrate.
상기 제1 기재가, 폴리에틸렌테레프탈레이트로 구성되는, 백그라인드 테이프.According to claim 1 or 2,
A backgrind tape, wherein the first base material is made of polyethylene terephthalate.
상기 제2 기재가, 폴리올레핀계 수지로 구성되는, 백그라인드 테이프.According to paragraph 2,
A backgrind tape, wherein the second base material is made of polyolefin resin.
상기 점착제층의 두께가, 1㎛∼50㎛인, 백그라인드 테이프.According to claim 1 or 2,
A backgrind tape wherein the adhesive layer has a thickness of 1 μm to 50 μm.
상기 중간층의 두께가, 5㎛∼50㎛인, 백그라인드 테이프.According to claim 1 or 2,
A backgrind tape wherein the thickness of the intermediate layer is 5 μm to 50 μm.
상기 아크릴계 수지가, 카르복실기 함유 모노머 유래의 구성 단위를 갖고,
당해 카르복실기 함유 모노머 유래의 구성 단위의 함유 비율이, 당해 아크릴계 수지 100중량부에 대해, 2중량부∼30중량부인, 백그라인드 테이프.According to claim 1 or 2,
The acrylic resin has a structural unit derived from a carboxyl group-containing monomer,
A backgrind tape in which the content ratio of the structural unit derived from the carboxyl group-containing monomer is 2 parts by weight to 30 parts by weight with respect to 100 parts by weight of the acrylic resin.
스텔스 다이싱된 반도체 웨이퍼를 이면 연삭할 때에 사용되는, 백그라인드 테이프.According to claim 1 or 2,
Backgrind tape used for back grinding of stealth diced semiconductor wafers.
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