KR102640346B1 - Deposition mask for OLED - Google Patents

Abstract

The deposition mask for OLED of the embodiment includes a first surface and a second surface facing each other, and a deposition pattern region including a plurality of through holes formed by connecting small holes on the first surface and large holes on the second surface, and Includes a non-deposition area, the deposition pattern area includes three or more effective areas, the two outermost effective areas are an outer area, an effective area excluding the outer area is a central area, and the central area The located through hole may include a portion that has a different shape from the through hole located in the outer area.

Description

Deposition mask for OLED {Deposition mask for OLED}

The embodiment relates to a deposition mask for OLED. In other words, an OLED panel can be manufactured using the deposition mask according to the embodiment.

As display devices with high resolution and low power are required, various display devices such as liquid crystal displays and electroluminescent displays are being developed.

Electroluminescent display devices are attracting attention as next-generation display devices due to their excellent characteristics such as low light emission, low power consumption, and high resolution compared to liquid crystal display devices.

Electric field displays include organic light emitting display devices and inorganic light emitting display devices. That is, depending on the material of the light emitting layer, it can be distinguished into an organic light emitting display device and an inorganic light emitting display device.

Among these, organic light emitting display devices are attracting attention because they have a wide viewing angle, fast response speed, and low power consumption.

The organic material constituting this light-emitting layer can be patterned to form pixels on a substrate using a fine metal mask method.

At this time, the fine metal mask, that is, the deposition mask, may have through holes corresponding to the pattern to be formed on the substrate, and after aligning the fine metal mask on the substrate, the organic material is deposited, forming a red color pixel. (Red), Green, and Blue patterns can be formed.

Recently, ultra-high definition (UHD) display devices are required in various electronic devices such as virtual reality (VR) devices. Accordingly, a fine metal mask having fine-sized through holes capable of forming ultra-high resolution (UHD level) patterns is required.

A metal plate that can be used as a deposition mask may have a plurality of through holes formed through an etching process.

At this time, if all through holes in the deposition mask have the same shape, uniformity of deposition may be reduced. Accordingly, there was a problem in that process efficiency decreased as the deposition efficiency of the formed pattern decreased.

On the other hand, there is a problem in that it is difficult to uniformly form an OLED deposition pattern that can form a high-resolution or ultra-high-resolution (UHD level) pattern.

Therefore, a deposition mask for OLED with a new structure is required.

The embodiment relates to a deposition mask for forming a uniform OLED deposition pattern.

To this end, the embodiment may provide a deposition mask for OLED including a plurality of through holes having different shapes depending on the location.

The deposition mask for OLED of the embodiment includes a first surface and a second surface facing each other, and a deposition pattern region including a plurality of through holes formed by connecting small holes on the first surface and large holes on the second surface, and Includes a non-deposition area, the deposition pattern area includes three or more effective areas, the two outermost effective areas are an outer area, an effective area excluding the outer area is a central area, and the central area The located through hole may include a portion that has a different shape from the through hole located in the outer area.
In an embodiment, the large pore diameter of the outer area may have a first slope and a second slope on both sides in the longitudinal direction based on the center of the small pore diameter of the outer area.
The pore diameter angle of the rib located in the central region may include a region in which the pore diameter angle of the lip located in the outer region is different from each other.

The deposition mask for OLED according to the embodiment can improve the uniformity of the OLED deposition pattern by forming the shape of the through-holes located in the outer area to be different from the through-holes located in the central area.

The deposition mask for OLED according to the embodiment can solve the problem that deposition efficiency is reduced as the outermost through-holes are far away from the organic material source and the angle with the organic material source is away from the vertical.

The uniformity of the OLED pattern formed through the deposition mask for OLED according to the embodiment can be improved.

In addition, the deposition mask for OLED according to the embodiment can improve the process efficiency of forming a high-resolution or ultra-high-resolution deposition pattern.

1 to 3 are conceptual diagrams for explaining a process for depositing an organic material on a substrate.
4 to 6 are plan views of a deposition mask for OLED according to an embodiment.
FIG. 7A is a cross-sectional view of a deposition mask according to a comparative example.
FIG. 7B is a diagram showing the relative positions of the inner hole, small hole, and large hole of the deposition mask according to the comparative example as observed on a plane.
FIG. 8A is a cross-sectional view of a deposition mask according to the first embodiment.
FIG. 8B is a diagram showing the relative positions of the inner hole, small hole, and large hole of the deposition mask according to the first embodiment as observed from a plane.
FIG. 9A is a cross-sectional view of a deposition mask according to the second embodiment.
FIG. 9B is a diagram showing the relative positions of the inner hole, small hole, and large hole of the deposition mask according to the second embodiment as observed from a plane.
FIG. 10A is a cross-sectional view of a deposition mask according to the third embodiment.
FIG. 10B is a diagram showing the relative positions of the inner hole, small hole, and large hole of the deposition mask according to the third embodiment as observed from a plane.
FIG. 11A is a diagram showing the relative positions of small holes and large holes of a deposition mask according to the first or third embodiment as viewed from a plane.
Figure 11b is a graph showing misalignment according to distance based on the central area of the deposition mask.
FIG. 11C is a diagram showing the misalignment of small holes and large holes of a deposition mask according to the first or third embodiment as observed in cross section.
FIG. 12A is a plan view of the deposition mask according to the first embodiment and a diagram showing the shapes of small holes and large holes in the central area and the outer area.
Figure 12B is a cross-sectional view of a deposition mask according to the first embodiment.
FIG. 13A is a plan view of the deposition mask according to the second embodiment and a diagram showing the shapes of small holes and large holes in the central area and the outer area.
Figure 13B is a cross-sectional view of a deposition mask according to the second embodiment.
FIG. 13C is a photograph of an island in the central area of a deposition mask according to the second embodiment.
FIG. 13D is a photograph of an island in the first outer region of the deposition mask according to the second embodiment.
Figure 13e is a photograph of the island of the second outer region of the deposition mask according to the second embodiment.
FIG. 14A is a plan view of a deposition mask according to the third embodiment and a diagram showing the shapes of small holes and large holes in the central area and the outer area.
Figure 14b is a cross-sectional view of a deposition mask according to the third embodiment.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the attached drawings. However, the technical idea of the present invention is not limited to some of the described embodiments, but may be implemented in various different forms, and as long as it is within the scope of the technical idea of the present invention, one or more of the components between the embodiments Can be used by selectively combining or replacing. In addition, terms (including technical and scientific terms) used in the embodiments of the present invention, unless explicitly specifically defined and described, are generally understood by those skilled in the art to which the present invention pertains. It can be interpreted as meaning, and the meaning of commonly used terms, such as terms defined in a dictionary, can be interpreted by considering the contextual meaning of the related technology. Additionally, the terms used in the embodiments of the present invention are for describing the embodiments and are not intended to limit the present invention. In this specification, the singular may also include the plural unless specifically stated in the phrase, and when described as “at least one (or more than one) of A, B, and C,” it can be combined with A, B, and C. It can contain one or more of all possible combinations. Additionally, when describing the components of an embodiment of the present invention, terms such as first, second, A, B, (a), and (b) may be used. These terms are only used to distinguish the component from other components, and are not limited to the essence, sequence, or order of the component. And, when a component is described as being 'connected', 'coupled' or 'connected' to another component, the component is not only directly connected, combined or connected to that other component, but also is connected to that component. It may also include cases where other components are 'connected', 'coupled', or 'connected' by another component between them. In addition, when described as being formed or disposed "on top or bottom" of each component, top or bottom refers not only to cases where two components are in direct contact with each other, but also to one or more components. This also includes cases where another component described above is formed or placed between two components. Additionally, when expressed as “top (above) or bottom (bottom),” it can include the meaning of not only the upward direction but also the downward direction based on one component.

A process for depositing an organic material on a substrate will be described with reference to FIGS. 1 to 3 .

FIG. 1 is a diagram showing an organic material deposition apparatus including a deposition mask 100 according to an embodiment.

The organic material deposition apparatus may include a deposition mask 100, a mask frame 200, a substrate 300, an organic material deposition container 400, and a vacuum chamber 500.

The deposition mask 100 may include a plurality of through holes (TH). The deposition mask 100 may be a deposition mask substrate including a plurality of through holes (TH). At this time, the through hole may be formed to correspond to the pattern to be formed on the substrate.

The mask frame 200 may include an opening. A plurality of through holes of the deposition mask 100 may be disposed in an area corresponding to the opening. Accordingly, the organic material supplied to the organic material deposition container 400 may be deposited on the substrate 300. The deposition mask may be placed and fixed on the mask frame 200. For example, the deposition mask may be stretched and fixed on the mask frame 200 by welding.

Referring to FIGS. 1 and 2 , the deposition mask 100 may be pulled in opposite directions from the outermost edge of the deposition mask 100 . One end of the deposition mask 100 and the other end opposite to the one end may be pulled in opposite directions in the longitudinal direction of the deposition mask 100. One end and the other end of the deposition mask 100 may face each other and be arranged in parallel. One end of the deposition mask 100 may be one of the ends forming four sides disposed on the outermost side of the deposition mask 100 . For example, the deposition mask 100 may be stretched with a force of 0.4 to 1.5 kgf. Accordingly, the tensioned deposition mask 100 can be mounted on the mask frame 200.

Next, the deposition mask 100 can be fixed to the mask frame 200 by welding the side area, that is, the edge, of the deposition mask 100. Next, a portion of the deposition mask 100 disposed outside the mask frame 200 may be removed by a method such as cutting. For example, as the deposition mask 100 is deformed during the welding process, if the deposition mask 100 is disposed in an area other than the fixed area of the deposition mask 100 and the mask frame 200, , a portion of the deposition mask can be removed.

Referring to FIGS. 1 and 3 , the substrate 300 may be a substrate used to manufacture a display device. Patterns of red, green, and blue may be formed on the substrate 300 to form pixels of the three primary colors of light.

The organic material deposition vessel 400 may be a crucible. An organic material may be placed inside the crucible.

As a heat source and/or current is supplied to the crucible within the vacuum chamber 500, the organic material may be deposited on the substrate 100.

FIG. 3 is an enlarged view of one through hole of the deposition mask 100.

The deposition mask 100 may include a first surface 101 and a second surface 102 opposing the first surface.

The first surface 101 of the deposition mask 100 may include a first surface hole (V1), and the second surface 102 of the deposition mask 100 may include a second surface hole (V2). there is.

The through hole may be formed by a connection portion CP through which the first surface hole V1 and the second surface hole V2 communicate. That is, a through hole may be formed by communicating with a small hole on the first side of the deposition mask 100 and a large hole on the second side. The diameter of the connection part (CP) can be expressed as an inner hole.

The diameter of the second surface hole (V2) may be larger than the diameter of the first surface hole (V1). At this time, the diameter of the first surface hole (V1) may be measured from the first surface (101), and the diameter of the second surface hole (V2) may be measured from the second surface (102).

The first surface hole V1 may be disposed toward the substrate 300 . Accordingly, the first surface hole V1 may have a shape corresponding to the deposit D, that is, the pattern.

The second surface hole V2 may be disposed toward the organic material deposition container 400 . Accordingly, the second surface hole (V2) can accommodate the organic material supplied from the organic material deposition container 400 in a wide width, and the first surface hole (V1) has a width smaller than the second surface hole (V2). Through this, a fine pattern can be quickly formed on the substrate 300.

4 to 6 are plan views of a deposition mask for OLED according to an embodiment.

Referring to FIGS. 4 to 6 , the deposition mask according to the embodiment may include a deposition pattern area (DA) and a non-deposition area (NDA).

The deposition pattern area DA may be an area for depositing an organic material through the deposition pattern portion.

The deposition pattern area DA may include a plurality of effective areas EA and CA included in one deposition mask. The deposition pattern area DA may include three or more effective areas.

Referring to FIGS. 4 and 5 , the deposition pattern area DA may include three effective areas. At this time, the two outermost effective areas can be defined as the outer area (EA). The effective area excluding the outer area (EA) can be defined as the central area (CA). At this time, the central area (CA) may mean one effective area.

The outer area (EA) includes a first outer area (EA1) located at one end close to the central area (CA) and a second outer area (EA2) located at the other end opposite to the one end of the central area (CA). can do.

Accordingly, in the longitudinal direction of the deposition mask, the effective areas may be arranged in the order of the first outer area (EA1), the central area (CA), and the second outer area (EA2).

Referring to FIG. 6, the deposition pattern area DA may include four effective areas. At this time, the two outermost effective areas can be defined as the outer area (EA). The effective area excluding the outer area (EA) can be defined as the central area (CA). At this time, the central area (CA) may mean two effective areas.

The outer area (EA) includes a first outer area (EA1) located at one end close to the central area (CA) and a second outer area (EA2) located at the other end opposite to the one end of the central area (CA). can do.

Accordingly, in the longitudinal direction of the deposition mask, the effective areas may be arranged in the order of the first outer area (EA1), the first central area (CA1), the second central area (CA2), and the second outer area (EA2). .

The plurality of deposition pattern portions may include a first outer area (EA1), a central area (CA), and a second outer area (EA2). One deposition pattern portion may be one of the first outer area (EA1), the central area (CA), and the second outer area (EA2).

In the case of a small display device such as a smart phone, one deposition pattern portion included in one deposition mask may be used to form one display device. Accordingly, one deposition mask can include a plurality of deposition pattern portions, allowing multiple display devices to be formed simultaneously. Therefore, the deposition mask according to the embodiment can improve process efficiency.

Alternatively, in the case of a large display device such as a television, several deposition pattern portions included in one deposition mask may be part of forming one display device. At this time, the plurality of deposition pattern portions may be used to prevent deformation due to the load of the mask.

The deposition pattern area DA may include a plurality of separation areas IA1 and IA2 included in one deposition mask.

Isolation areas IA1 and IA2 may be disposed between adjacent deposition pattern portions. The separation area may be a spaced area between a plurality of deposition pattern parts. For example, a first separation area (IA1) may be disposed between the first outer area (EA1) and the central area (CA). For example, a second separation area (IA2) may be disposed between the central area (CA) and the second outer area (EA2). The separation area can distinguish adjacent deposition pattern portions and enable one deposition mask to support a plurality of deposition pattern portions.

The deposition mask may include non-deposition areas (NDA) on both sides of the deposition pattern area (DA) in the longitudinal direction. The deposition mask according to the embodiment may include the non-deposition area (NDA) on both sides of the deposition pattern area (DA) in the horizontal direction.

The non-deposition area (NDA) of the deposition mask may be an area that is not involved in deposition.

The non-deposition area NDA may include frame fixing areas FA1 and FA2 for fixing the mask frame to the mask frame. For example, the non-deposition area NDA of the deposition mask may include a first frame fixing area FA1 on one side of the deposition pattern area DA, and the first frame fixing area FA1 may be located on one side of the deposition pattern area DA. It may include a second frame fixation area (FA2) on the other side opposite to the . The first frame fixing area FA1 and the second frame fixing area FA2 may be areas fixed to the mask frame by welding.

The non-deposition area NDA may include half-etched portions HF1 and HF2. For example, the non-deposition area NDA of the deposition mask may include a first half-etched portion HF1 on one side of the deposition pattern area DA, and the first half-etched portion HF1 may be located on one side of the deposition pattern area DA. It may include a second half-etched portion (HF2) on the other side opposite to the other side. The first half-etched portion HF1 and the second half-etched portion HF2 may be areas where grooves are formed in the depth direction of the deposition mask. The first half-etched portion HF1 and the second half-etched portion HF2 may have grooves about half the thickness of the deposition mask, thereby dispersing stress when the deposition mask is stretched.

Additionally, the half-etched portion may be formed simultaneously with forming the first surface hole or the second surface hole. This can improve process efficiency.

Meanwhile, the half-etched portion may be formed in the non-effective area, which is an area other than the effective area of the deposition pattern area DA. A plurality of half-etched portions may be disposed distributed over all or part of the non-effective area in order to distribute stress when the deposition mask is stretched.

Additionally, the half-etched portion may be formed in the frame fixing area and/or the surrounding area of the frame fixing area. Accordingly, the stress of the deposition mask that occurs when fixing the deposition mask to the frame and/or depositing the deposition material after fixing the deposition mask to the frame can be uniformly distributed.

The frame fixing areas FA1 and FA2 for fixing to the mask frame of the non-deposited area NDA include the half-etched parts HF1 and HF2 of the non-deposited area NDA and the half-etched parts HF1 and HF2, respectively. It may be disposed between effective areas of adjacent deposition pattern areas DA. For example, the first frame fixing area FA1 includes a first half-etched part HF1 of the non-deposition area NDA and a first outer area EA1 adjacent to the first half-etched part HF1. It can be placed between . For example, the second frame fixing area FA2 is located in the second half-etched area HF2 of the non-deposited area NDA and the deposition pattern area DA adjacent to the second half-etched area HF2. It may be placed between the second outer area EA2. Accordingly, a plurality of deposition pattern parts can be fixed simultaneously.

The deposition mask may include semicircular open portions at both ends in the horizontal direction (X). The non-deposition area NDA of the deposition mask may include a semicircular open portion at both ends in the horizontal direction. For example, the non-deposition area NDA of the deposition mask may include an open portion whose center in the vertical direction (Y) is open on one side in the horizontal direction. For example, the non-deposition area NDA of the deposition mask may include an open portion with an open center in the vertical direction on the other side opposite to the one side in the horizontal direction. That is, both ends of the deposition mask may include open portions at 1/2 of the vertical length. For example, both ends of the deposition mask may be shaped like horseshoes.

The half-etched portion may be formed in various shapes.

Referring to FIG. 4, the half-etched portion may include a semicircular groove portion. The groove may be formed on at least one of the first side 101 or the second side 102 of the deposition mask. Preferably, the half-etched portion may be formed on a surface corresponding to the first surface hole (side of the surface to be deposited). Accordingly, the half-etched portion can disperse stress that may occur due to a size difference between the first surface hole and the second surface hole.

Alternatively, the half-etched portion may be formed on both the first and second surfaces in order to distribute stress on the first and second surfaces. At this time, the half-etching area of the half-etching portion may be wider on the side corresponding to the first surface hole (side of the surface to be deposited). That is, the deposition mask according to the embodiment may include the half-etched portion as grooves are formed on the first and second surfaces of the deposition mask, respectively. In detail, the depth of the groove of the half-etched portion formed on the first surface may be greater than the depth of the groove of the half-etched portion formed on the second surface. Accordingly, the half-etched portion can disperse stress that may occur due to a size difference between the first surface hole and the second surface hole. The formation of the first surface hole, the second surface hole, and the half-etched portion can make the surface area on the first side and the second side of the deposition mask similar, thereby preventing distortion of the through hole.

Additionally, the grooves formed on the first and second surfaces may be formed to be offset from each other. Through this, it is possible to prevent the half-etched portion from forming a through hole.

The half-etched portion may include a curved surface and a flat surface.

A plane of the first half-etched portion HF1 may be disposed adjacent to the first outer area EA1, and the plane may be disposed horizontal to an end of the deposition mask in the longitudinal direction. The curved surface of the first half-etched portion HF1 may be convex toward one end in the longitudinal direction of the deposition mask. For example, the curved surface of the first half-etched portion HF1 may be formed such that a point at half the vertical length of the deposition mask corresponds to a semicircular radius.

A plane of the second half-etched portion HF2 may be disposed adjacent to the second outer area EA2, and the plane may be disposed horizontal to an end of the deposition mask in the longitudinal direction. The curved surface of the second half-etched portion HF2 may be convex toward the other end in the longitudinal direction of the deposition mask. For example, the curved surface of the second half-etched portion HF2 may be formed such that a point at half the vertical length of the deposition mask corresponds to a semicircular radius.

Meanwhile, the curved surfaces of the open portions located at both ends of the deposition mask may face the half-etched portion. Accordingly, the open portion located at both ends of the deposition mask may have the shortest separation distance at a point that is half the vertical length of the first or second half-etched portion and the deposition mask.

Referring to Figures 5 and 6, the half-etched portion may have a rectangular shape. The first half-etched portion HF1 and the second half-etched portion HF2 may have a rectangular or square shape.

A deposition mask according to an embodiment may include a plurality of half-etched portions. The deposition mask according to the embodiment may include a plurality of half-etched portions in at least one of the deposition pattern area DA and the non-deposition area NDA. The deposition mask according to the embodiment may include a half-etched portion in the non-effective area and/or the non-deposition area.

Referring to FIGS. 4 to 6 , the deposition mask according to the embodiment may include two half-etched portions. For example, the half-etched portion may include an even number of half-etched portions. The deposition mask according to the embodiment may be disposed only in the non-deposition area (NDA).

The half-etched portion is preferably formed to be symmetrical in the X-axis direction or Y-axis direction based on the center of the mask. Through this, the tensile force in both directions can be equalized.

Alternatively, the deposition mask according to the embodiment may include four half-etched portions. For example, the half-etched portion may include an even number of half-etched portions. The deposition mask according to the embodiment may include a plurality of half-etched portions only in the non-deposition area (NDA).

A third half-etched portion HF3 may be further included between the first half-etched portion HF1 and the first outer area EA1. For example, the third half-etched portion HF3 may be disposed between the first frame fixing area FA1 and the first outer area EA1.

A fourth half-etched portion HF4 may be further included between the second half-etched portion HF2 and the second outer area EA2. For example, the fourth half-etched portion HF4 may be disposed between the second frame fixing area FA2 and the second outer area EA2.

The first half-etched portion HF1 disposed at a corresponding horizontal position may have a shape corresponding to the second half-etched portion HF2. The third half-etched portion HF3 disposed at a corresponding horizontal position may have a shape corresponding to the fourth half-etched portion HF4.

The first half-etched portion HF1 disposed at a different position may have a different shape from either the third half-etched portion HF3 or the fourth half-etched portion HF4. However, the embodiment is not limited to this, and the first half-etched portion (HF1), the second half-etched portion (HF2), the third half-etched portion (HF3), and the fourth half-etched portion (HF4) Of course, they can all have the same shape. Although four half-etched portions are described in the embodiment, it goes without saying that the half-etched portions may be formed in various shapes and numbers within the range of being formed in the non-effective area. That is, the shape of the half-etched portion can be any shape as long as it is formed to be symmetrical with respect to the center of the horizontal direction (X) of the deposition mask. Additionally, of course, there may be six or more half-etched portions.

The third half-etched portion HF3 and the fourth half-etched portion HF4 may have a rectangular shape. The third half-etched portion HF3 and the fourth half-etched portion HF4 may have a rectangular shape extending in a vertical direction of the deposition mask. In detail, the length of the third half-etched part HF3 and the fourth half-etched part HF4 in the vertical direction (Y) may be longer than the length in the horizontal direction (X). Accordingly, the half-etching portion can effectively control stress generated when fixing the deposition mask to the frame.

The vertical length (Y) of the open portion located at both ends of the deposition mask may correspond to or be different from the vertical length of the half-etched portion.

For example, referring to FIGS. 4 to 6, the vertical length (d1) of the planar portion of the first half-etched portion (HF1) or the second half-etched portion (HF2) is equal to the vertical length of the open portion (HF2). It can be larger than the length (d2). Alternatively, the vertical length d1 of the first half-etched portion HF1 or the second half-etched portion HF2 may correspond to the vertical length d2 of the open portion.

For example, the vertical length d1 of the first half-etched portion HF1 or the second half-etched portion HF2 may be 80 to 200% of the vertical length d2 of the open portion. (d1:d2 = 0.8~2:1). The vertical length d1 of the first half-etched portion HF1 or the second half-etched portion HF2 may be 90 to 150% of the vertical length d2 of the open portion (d1:d2 = 0.9~1.5:1). The vertical length d1 of the first half-etched portion HF1 or the second half-etched portion HF2 may be 95 to 110% of the vertical length d2 of the open portion (d1:d2) = 0.95~1.1:1). Preferably, the vertical length d1 of the first half-etched portion HF1 or the second half-etched portion HF2 may be 80 to 120% of the vertical length of the effective area. Accordingly, when tensing the deposition mask, stress can be distributed evenly, thereby reducing wave deformation of the deposition mask. Accordingly, the deposition mask according to the embodiment may have uniform through holes, and the deposition efficiency of the pattern may be improved.

With reference to FIGS. 7 to 10 , a plurality of through holes formed in the deposition pattern area will be described.

The deposition mask may include active areas and unactive areas. The deposition mask 100 may include an effective area including a plurality of through holes TH and ribs LB, and an ineffective area disposed outside the effective area.

The effective area may be an inner area when the outer edges of the outermost through holes for depositing organic materials among the plurality of through holes are connected. The non-effective area may be an outer area when the outermost through-holes for depositing organic materials among the plurality of through-holes are connected.

The non-effective area is an area excluding the effective area of the deposition pattern area (DA) and the non-deposition area (NDA).

The central area CA, the first outer area EA1, and the second outer area EA2 may each include a plurality of through holes. The central area CA, the first outer area EA1, and the second outer area EA2 may each include the same number of through holes.

First, a deposition mask according to a comparative example will be described with reference to FIG. 7 .

Referring to FIG. 7A, in the deposition mask according to the comparative example, the through hole located in the central area (CA) and the through hole located in the outer area (EA) may have the same shape.

In the deposition mask according to the comparative example, the sizes of the inner pore diameter, small pore diameter, and large pore diameter of the through hole located in the central area (CA) and the through hole located in the outer area (EA) may correspond to each other.

The inner diameter I1 of the through hole located in the central area CA may have a size corresponding to the inner diameter I2 of the through hole located in the first outer area EA1. The inner diameter I1 of the through hole located in the central area CA may have a size corresponding to the inner diameter I3 of the through hole located in the second outer area EA2. Additionally, the inner diameter I2 of the through hole located in the first outer area EA1 may have a size corresponding to the inner diameter I3 of the through hole located in the second outer area EA2.

The small pore diameter S1 of the through hole located in the central area CA may have a size corresponding to the small pore diameter S2 of the through hole located in the first outer area EA1. The small pore diameter S1 of the through hole located in the central area CA may have a size corresponding to the small pore diameter S3 of the through hole located in the second outer area EA2. Additionally, the small pore diameter S2 of the through hole located in the first outer area EA1 may have a size corresponding to the small pore diameter S3 of the through hole located in the second outer area EA2.

The large bore diameter L1 of the through hole located in the central area CA may have a size corresponding to the large bore diameter L2 of the through hole located in the first outer area EA1. The large bore diameter L1 of the through hole located in the central area CA may have a size corresponding to the large bore diameter L3 of the through hole located in the second outer area EA2. Additionally, the large bore diameter L2 of the through hole located in the first outer area EA1 may have a size corresponding to the large bore diameter L3 of the through hole located in the second outer area EA2.

Referring to Figure 7b, the center of the small pore diameter (S1) located in the central area (CA) and the center of the large pore diameter (L1) are aligned, and the center of the small pore diameter (S1) located in the outer area (EA) The center of the large foramen diameter (L1) can be aligned.

That is, the center of the small pore diameter (S1) and the center of the large pore diameter (L1) of the through hole located in the central area (CA) may coincide. The center of the small hole diameter (S2) and the center of the large hole diameter (L2) of the through hole located in the first outer area (EA1) may coincide. Additionally, the center of the small hole diameter (S3) and the center of the large hole diameter (L3) of the through hole located in the second outer area (EA2) may coincide.

Additionally, the separation distance between two adjacent ribs LB located in the central area CA may correspond to the separation distance between two adjacent ribs LB located in the outer area EA. Here, the separation distance may mean the distance between the ends where the large pore diameters of the adjacent first ribs (LB) are formed and the ends where the large pore diameters of the second ribs (LB) are formed, measured in one direction.

The area of the island portion located in the central area (CA) may correspond to the area of the island portion located in the outer area (EA). Here, the island portion may refer to one side of the deposition mask located between adjacent through holes. For example, the island portion may refer to any surface of an unetched deposition mask located between any adjacent first and second through holes.

Meanwhile, the diameter of the island portion located in the central area (CA) may correspond to the diameter of the island portion located in the outer area (EA). Here, the diameter of the island portion may mean the maximum diameter of the non-etched surface of any one island portion surrounded by different through holes.

In the deposition mask according to the comparative example, the height of the lip LB located in the central area CA may correspond to the height of the lip LB located in the outer area EA.

The carding hole height SH1 of the lip LB located in the central area CA may correspond to the carding hole height SH2 of the lip LB located in the first outer area EA1. The carding hole height SH1 of the lip LB located in the central area CA may correspond to the carding hole height SH3 of the lip LB located in the second outer area EA2. Additionally, the carding hole height SH2 of the lip LB located in the first outer area EA1 may correspond to the carding hole height SH3 of the lip LB located in the second outer area EA2. At this time, the small hole height refers to the distance from the connection part where the inner hole is located to the first surface, and the distance can be measured in a direction perpendicular to the first surface.

The height LH1 of the facing hole of the lip LB located in the central area CA may correspond to the height LH2 of the facing hole of the lip LB located in the first outer area EA1. The height LH1 of the facing hole of the lip LB located in the central area CA may correspond to the height LH3 of the facing hole of the lip LB located in the second outer area EA2. Additionally, the height LH2 of the facing hole of the lip LB located in the first outer area EA1 may correspond to the height LH3 of the facing hole of the lip LB located in the second outer area EA2. At this time, the height of the facing hole refers to the distance from the connection part where the inner hole is located to the second surface, and the distance can be measured in a direction perpendicular to the second surface.

In the deposition mask according to the comparative example, the pore diameter angle of the lip LB located in the central area CA may correspond to the pore diameter angle of the lip LB located in the outer area EA.

In other words, it can be seen that the height of the pores and the size of the grains of the deposition mask according to the comparative example are constant regardless of the position.

Accordingly, through-holes located on the outskirts, far away from the organic material source, have the problem of low deposition efficiency (see dotted arrow in FIG. 7A). As the deposition area increases from 4.5G to 6G, there is a problem that deposition efficiency in the outer area of the deposition mask decreases compared to the central area of the deposition mask.

Since the pores formed in the central region are positioned at an angle close to a right angle to the organic material source, they can be deposited at precise locations on the substrate. On the other hand, since the pores formed in the outer area are placed at an acute or obtuse angle that moves away from the right angle to the organic material source as it goes toward the outermost area, it may be difficult to deposit at the exact location on the substrate due to interference from the lip and island.

In order to increase deposition efficiency, a method of lowering the thickness of the mask can be considered, but since reducing the thickness has limitations, new attempts are required.

Next, various deposition masks according to embodiments will be described with reference to FIGS. 8 to 10.

The deposition mask according to the embodiment may include a portion where a through hole located in the central area (CA) has a different shape from a through hole located in the outer area (EA). This is to increase the deposition efficiency of through-holes located on the outskirts and far away from the organic material source.

Referring to FIG. 8, a deposition mask according to the first embodiment will be described.

Referring to FIG. 8A , the deposition mask according to the first embodiment may include a portion where the through hole located in the central area (CA) and the through hole located in the outer area (EA) have different shapes.

In the deposition mask according to the first embodiment, the inner pore diameter, small pore diameter, and large pore diameter of the through hole located in the central area (CA) and the through hole located in the outer area (EA) may correspond to each other.

The inner diameter I1 of the through hole located in the central area CA may have a size corresponding to the inner diameter I2 of the through hole located in the first outer area EA1. The inner diameter I1 of the through hole located in the central area CA may have a size corresponding to the inner diameter I3 of the through hole located in the second outer area EA2. Additionally, the inner diameter I2 of the through hole located in the first outer area EA1 may have a size corresponding to the inner diameter I3 of the through hole located in the second outer area EA2.

The small pore diameter S1 of the through hole located in the central area CA may have a size corresponding to the small pore diameter S2 of the through hole located in the first outer area EA1. The small pore diameter S1 of the through hole located in the central area CA may have a size corresponding to the small pore diameter S3 of the through hole located in the second outer area EA2. Additionally, the small pore diameter S2 of the through hole located in the first outer area EA1 may have a size corresponding to the small pore diameter S3 of the through hole located in the second outer area EA2.

The large bore diameter L1 of the through hole located in the central area CA may have a size corresponding to the large bore diameter L2 of the through hole located in the first outer area EA1. The large bore diameter L1 of the through hole located in the central area CA may have a size corresponding to the large bore diameter L3 of the through hole located in the second outer area EA2. Additionally, the large bore diameter L2 of the through hole located in the first outer area EA1 may have a size corresponding to the large bore diameter L3 of the through hole located in the second outer area EA2.

Referring to FIG. 8B, the center of the small pore diameter (S1) and the center of the large pore diameter (L1) located in the central area (CA) may be aligned. Meanwhile, the center of the small pore diameter (S1) and the center of the large pore diameter (L1) located in the outer area (EA) may include a misaligned area. Here, the misalignment of the center of the small pore diameter (S1) and the center of the large pore diameter (L1) located in the outer area (EA) means that the center of the small pore diameter (S1) located in a part of the outer area (EA) This may mean that the center of the large hole diameter (L1) includes an area where the center is misaligned.

That is, the center of the small pore diameter (S1) and the center of the large pore diameter (L1) of the through hole located in the central area (CA) may coincide. In detail, the center of the small pore diameter (S1) and the center of the large pore diameter (L1) of the through hole located in the central area (CA) are located above and below, and the center of the small pore diameter (S1) and the center of the large pore diameter (L1) are located above and below. The passing imaginary line may be perpendicular to one side of the deposition mask.

Meanwhile, the center of the small pore diameter (S2) and the center of the large pore diameter (L2) of the through hole located in the first outer area EA1 may be different from each other. In detail, an imaginary line passing through the center of the small pore diameter S2 and the center of the large pore diameter L2 of the through hole located in the first outer area EA1 may be inclined with one side of the deposition mask. For example, an imaginary line passing through the center of the small pore diameter (S2) and the center of the large pore diameter (L2) of the through hole located in the first outer area (EA1) allows the organic deposition material to flow into the first outer area (EA1). It may be the same or similar to the radiating direction or radiating angle.

Additionally, the center of the small pore diameter (S3) and the center of the large pore diameter (L3) of the through hole located in the second outer area EA2 may be different from each other. In detail, an imaginary line passing through the center of the small pore diameter S3 and the center of the large pore diameter L3 of the through hole located in the second outer area EA2 may be inclined with one side of the deposition mask. For example, an imaginary line passing through the center of the small pore diameter (S3) and the center of the large pore diameter (L3) of the through hole located in the second outer area (EA2) allows the organic deposition material to flow to the second outer area (EA2). It may be the same or similar to the radiating direction or radiating angle.

Each of the plurality of through holes located in the outer area (EA) may include a separation distance between the center of the large pore diameter and the center of the small pore diameter that increases as the distance from the central area (CA) increases. Here, the separation distance between the center of the large pore diameter and the center of the small pore diameter may mean the separation distance when observed on a plane.

Additionally, the separation distance between two adjacent ribs LB located in the central area CA may include a different part from the separation distance between two adjacent ribs LB located in the outer area EA. Here, the separation distance may mean the distance between the ends where the large pore diameters of the adjacent first ribs (LB) are formed and the ends where the large pore diameters of the second ribs (LB) are formed, measured in one direction.

The area of the island portion located in the central area (CA) may correspond to the area of the island portion located in the outer area (EA). Here, the island portion may refer to one side of the deposition mask located between adjacent through holes. For example, the island portion may refer to any surface of an unetched deposition mask located between any adjacent first and second through holes.

Meanwhile, the diameter of the island portion located in the central area (CA) may correspond to the diameter of the island portion located in the outer area (EA).

The deposition mask according to the first embodiment may include an area where the height of the lip LB located in the central area CA corresponds to the height of the lip LB located in the outer area EA.

The carding hole height SH1 of the lip LB located in the central area CA may include an area corresponding to the carding hole height SH2 of the lip LB located in the first outer area EA1. The carding hole height SH1 of the lip LB located in the central area CA may correspond to the carding hole height SH3 of the lip LB located in the second outer area EA2. In addition, the carding hole height SH2 of the lip LB located in the first outer area EA1 may include an area corresponding to the carding hole height SH3 of the lip LB located in the second outer area EA2. You can. At this time, the small hole height refers to the distance from the connection part where the inner hole is located to the first surface, and the distance can be measured in a direction perpendicular to the first surface.

The face hole height LH1 of the lip LB located in the central area CA may include an area corresponding to the face hole height LH2 of the lip LB located in the first outer area EA1. The face hole height LH1 of the lip LB located in the central area CA may include an area corresponding to the face hole height LH3 of the lip LB located in the second outer area EA2. Additionally, the height LH2 of the facing hole of the lip LB located in the first outer area EA1 may correspond to the height LH3 of the facing hole of the lip LB located in the second outer area EA2. At this time, the height of the facing hole refers to the distance from the connection part where the inner hole is located to the second surface, and the distance can be measured in a direction perpendicular to the second surface.

Meanwhile, the deposition mask according to the first embodiment may include an area where the pore diameter angle of the lip LB located in the central area CA is different from the pore diameter angle of the lip LB located in the outer area EA. there is.

That is, the deposition mask according to the first embodiment can adjust the angle of the pore diameter to facilitate deposition of the organic material based on the organic material source through misalignment of the small pore diameter and the large pore diameter.

The central area (CA) can be deposited through alignment of the center of the large pore diameter and the center of the small pore diameter. Meanwhile, the plurality of through holes located in the outer area (EA) move toward both ends of the outer area (EA) based on the central area (CA), and the larger the distance from the central area (CA) becomes, the larger the hole diameter becomes. The position of can be gradually moved. At this time, the direction of the large pore diameter moving (shifted) based on the small pore diameter of each through hole as it moves from the central area CA toward the end of the first outer area EA1 is from the central area CA. As the second outer area EA2 moves toward the end, the direction of the large pore diameter may be opposite to that of the large pore diameter that moves (shifts) based on the small pore diameter of each through hole. Here, being opposite may mean directions that are 180 degrees from each other, to the right and to the left. That is, the embodiment may form a pore by adjusting the angle of the pore to facilitate deposition of the organic material. Accordingly, even through holes located at the outermost (end) of the outer area (EA) may have excellent deposition efficiency.

Referring to FIG. 9, a deposition mask according to the second embodiment will be described.

Referring to FIG. 9A , the deposition mask according to the second embodiment may include a portion where the through hole located in the central area (CA) and the through hole located in the outer area (EA) have different shapes.

In the deposition mask according to the second embodiment, the sizes of the inner pores and small pores of the through holes located in the central area (CA) and the through holes located in the outer area (EA) may correspond to each other.

The inner diameter I1 of the through hole located in the central area CA may have a size corresponding to the inner diameter I2 of the through hole located in the first outer area EA1. The inner diameter I1 of the through hole located in the central area CA may have a size corresponding to the inner diameter I3 of the through hole located in the second outer area EA2. Additionally, the inner diameter I2 of the through hole located in the first outer area EA1 may have a size corresponding to the inner diameter I3 of the through hole located in the second outer area EA2.

The small pore diameter S1 of the through hole located in the central area CA may have a size corresponding to the small pore diameter S2 of the through hole located in the first outer area EA1. The small pore diameter S1 of the through hole located in the central area CA may have a size corresponding to the small pore diameter S3 of the through hole located in the second outer area EA2. Additionally, the small pore diameter S2 of the through hole located in the first outer area EA1 may have a size corresponding to the small pore diameter S3 of the through hole located in the second outer area EA2.

Meanwhile, the deposition mask according to the second embodiment may include an area where the large pore diameter of the central area (CA) and the large pore diameter of the outer area (EA) are different from each other.

The large bore diameter L1 of the through hole located in the central area CA may have a smaller size than the large bore diameter L2 of the through hole located in the first outer area EA1. The large bore diameter L1 of the through hole located in the central area CA may have a smaller size than the large bore diameter L3 of the through hole located in the second outer area EA2.

The plurality of through holes located in the outer area (EA) move toward both ends of the outer area (EA) based on the central area (CA), and as the distance from the central area (CA) increases, the larger hole diameter increases. may include a gradually growing area. In detail, the large hole diameter of each through hole may gradually increase as it moves from the central area CA toward the end of the first outer area EA1. The large pore diameter of each through hole may gradually increase as it moves from the central area CA toward the end of the second outer area EA2.

Meanwhile, the large bore diameter L2 of the through hole located in the first outer area EA1 has a size that corresponds to the large hole diameter L3 of the through hole located in the second outer area EA2, or has a different size. Branches can contain areas. Since the size of the large pores of the plurality of through holes located in the first outer area (EA1) and/or the second outer area (EA2) is determined depending on the distance from the central area (CA), the organic material The foramen diameter of the outer area, which can be located close to the supply source, may have the same size as the foramen diameter of the central area. Meanwhile, the large pore diameter located at the outermost (end) of the outer region, which is located far from the organic material source, may include an area larger in size than the large pore diameter of the central region. Accordingly, it is possible to prevent a decrease in deposition efficiency due to the lip LB covering the supplied organic material.

Referring to Figure 9b, the center of the small pore diameter (S1) located in the central area (CA) and the center of the large pore diameter (L1) are aligned, and the center of the small pore diameter (S1) located in the outer area (EA) The center of the large foramen diameter (L1) can be aligned.

That is, the center of the small pore diameter (S1) and the center of the large pore diameter (L1) of the through hole located in the central area (CA) may coincide. The center of the small hole diameter (S2) and the center of the large hole diameter (L2) of the through hole located in the first outer area (EA1) may coincide. Additionally, the center of the small hole diameter (S3) and the center of the large hole diameter (L3) of the through hole located in the second outer area (EA2) may coincide.

Additionally, the separation distance between two adjacent ribs LB located in the central area CA may correspond to the separation distance between two adjacent ribs LB located in the outer area EA. Here, the separation distance may mean the distance between the ends where the large pore diameters of the adjacent first ribs (LB) are formed and the ends where the large pore diameters of the second ribs (LB) are formed, measured in one direction.

The area of the island portion located in the central area (CA) may be different from the area of the island portion located in the outer area (EA). The area of the island portion located in the central area (CA) may be larger than the area of the island portion located in the outer area (EA). That is, the larger hole diameter of each through hole located in the outer area (EA) is overetched than the larger hole diameter located in the central area as the distance from the central area (CA) increases, so the area of the island portion located in the outer area (EA) may be smaller than the area of the island portion located in the central area (CA). For example, an island may refer to a second surface of an unetched deposition mask located between any adjacent first and second through holes.

Meanwhile, the diameter of the island located in the central area (CA) may include an area different from the diameter of the island located in the outer area (EA). The island diameter of the outer area (EA) may include an area smaller than the island diameter of the central area (CA). Here, the diameter of the island may mean the maximum diameter of the non-etched surface of any one island portion surrounded by different through holes.

The deposition mask according to the second embodiment may include an area where the height of the lip LB located in the central area CA is different from that of the lip LB located in the outer area EA.

The carding hole height SH1 of the lip LB located in the central area CA may include an area corresponding to the carding hole height SH2 of the lip LB located in the first outer area EA1. The carding hole height SH1 of the lip LB located in the central area CA may correspond to the carding hole height SH3 of the lip LB located in the second outer area EA2. In addition, the carding hole height SH2 of the lip LB located in the first outer area EA1 may include an area corresponding to the carding hole height SH3 of the lip LB located in the second outer area EA2. You can. At this time, the small hole height refers to the distance from the connection part where the inner hole is located to the first surface, and the distance can be measured in a direction perpendicular to the first surface.

The face hole height LH1 of the lip LB located in the central area CA may include a different area from the face hole height LH2 of the lip LB located in the first outer area EA1. The facing hole height LH1 of the lip LB located in the central area CA may include a larger area than the facing hole height LH2 of the lip LB located in the first outer area EA1.

The facing hole height LH1 of the lip LB located in the central area CA may include a different area from the facing hole height LH3 of the lip LB located in the second outer area EA2. The facing hole height LH1 of the lip LB located in the central area CA may include a larger area than the facing hole height LH3 of the lip LB located in the second outer area EA2.

In addition, the face hole height LH2 of the lip LB located in the first outer area EA1 corresponds to or is different from the face hole height LH3 of the lip LB located in the second outside area EA2. may include. Since the height of the large pore diameter of the plurality of through holes located in the first outer area (EA1) and/or the second outer area (EA2) is determined depending on the distance from the central area (CA), the organic material The foramen diameter of the outer area, which may be located close to the supply source, may have the same height as the foramen diameter of the central area. On the other hand, the large pore diameter located at the outermost (end) of the outer area, which is located far from the organic material source, may be lower in height than the large pore diameter in the central area. Accordingly, it is possible to prevent a decrease in deposition efficiency due to the lip LB covering the supplied organic material.

That is, the deposition mask of the second embodiment may include an area where the thickness of the lip LB located in the outer area CA gradually becomes smaller as the thickness moves away from the central area. The deposition mask according to the second embodiment can increase deposition efficiency by lowering the height of the lip LB away from the central area CA.

Referring to FIG. 10, a deposition mask according to the third embodiment will be described.

Referring to FIG. 10A , the deposition mask according to the third embodiment may include a portion where the through hole located in the central area (CA) and the through hole located in the outer area (EA) have different shapes.

In the deposition mask according to the third embodiment, the sizes of the inner pores and small pores of the through holes located in the central area (CA) and the through holes located in the outer area (EA) may correspond to each other.

The inner diameter I1 of the through hole located in the central area CA may have a size corresponding to the inner diameter I2 of the through hole located in the first outer area EA1. The inner diameter I1 of the through hole located in the central area CA may have a size corresponding to the inner diameter I3 of the through hole located in the second outer area EA2. Additionally, the inner diameter I2 of the through hole located in the first outer area EA1 may have a size corresponding to the inner diameter I3 of the through hole located in the second outer area EA2.

The small pore diameter S1 of the through hole located in the central area CA may have a size corresponding to the small pore diameter S2 of the through hole located in the first outer area EA1. The small pore diameter S1 of the through hole located in the central area CA may have a size corresponding to the small pore diameter S3 of the through hole located in the second outer area EA2. Additionally, the small pore diameter S2 of the through hole located in the first outer area EA1 may have a size corresponding to the small pore diameter S3 of the through hole located in the second outer area EA2.

Meanwhile, the deposition mask according to the third embodiment may include an area where the large pore diameter of the central area (CA) and the large pore diameter of the outer area (EA) are different from each other.

The large bore diameter L1 of the through hole located in the central area CA may have a smaller size than the large bore diameter L2 of the through hole located in the first outer area EA1. The large bore diameter L1 of the through hole located in the central area CA may have a smaller size than the large bore diameter L3 of the through hole located in the second outer area EA2.

The plurality of through holes located in the outer area (EA) move toward both ends of the outer area (EA) based on the central area (CA), and as the distance from the central area (CA) increases, the larger hole diameter increases. may include a gradually growing area. In detail, the large hole diameter of each through hole may gradually increase as it moves from the central area CA toward the end of the first outer area EA1. The large pore diameter of each through hole may gradually increase as it moves from the central area CA toward the end of the second outer area EA2.

Meanwhile, the large bore diameter L2 of the through hole located in the first outer area EA1 has a size that corresponds to the large hole diameter L3 of the through hole located in the second outer area EA2, or has a different size. Branches can contain areas. Since the size of the large pores of the plurality of through holes located in the first outer area (EA1) and/or the second outer area (EA2) is determined depending on the distance from the central area (CA), the organic material The foramen diameter of the outer area, which can be located close to the supply source, may have the same size as the foramen diameter of the central area. Meanwhile, the large pore diameter located at the outermost (end) of the outer region, which is located far from the organic material source, may include an area larger in size than the large pore diameter of the central region. Accordingly, it is possible to prevent a decrease in deposition efficiency due to the lip LB covering the supplied organic material.

Referring to FIG. 10B, the center of the small pore diameter (S1) and the center of the large pore diameter (L1) located in the central area (CA) may be aligned. Meanwhile, the center of the small pore diameter (S1) and the center of the large pore diameter (L1) located in the outer area (EA) may include a misaligned area. Here, the misalignment of the center of the small pore diameter (S1) and the center of the large pore diameter (L1) located in the outer area (EA) means that the center of the small pore diameter (S1) located in a part of the outer area (EA) This may mean that the center of the large hole diameter (L1) includes an area where the center is misaligned.

That is, the center of the small pore diameter (S1) and the center of the large pore diameter (L1) of the through hole located in the central area (CA) may coincide. In detail, the center of the small pore diameter (S1) and the center of the large pore diameter (L1) of the through hole located in the central area (CA) are located above and below, and the center of the small pore diameter (S1) and the center of the large pore diameter (L1) are located above and below. The passing imaginary line may be perpendicular to one side of the deposition mask.

Meanwhile, the center of the small pore diameter (S2) and the center of the large pore diameter (L2) of the through hole located in the first outer area EA1 may be different from each other. In detail, an imaginary line passing through the center of the small pore diameter S2 and the center of the large pore diameter L2 of the through hole located in the first outer area EA1 may be inclined with one side of the deposition mask. For example, an imaginary line passing through the center of the small pore diameter (S2) and the center of the large pore diameter (L2) of the through hole located in the first outer area (EA1) allows the organic deposition material to flow into the first outer area (EA1). It may be the same or similar to the radiating direction or radiating angle.

Additionally, the center of the small pore diameter (S3) and the center of the large pore diameter (L3) of the through hole located in the second outer area EA2 may be different from each other. In detail, an imaginary line passing through the center of the small pore diameter S3 and the center of the large pore diameter L3 of the through hole located in the second outer area EA2 may be inclined with one side of the deposition mask. For example, an imaginary line passing through the center of the small pore diameter (S3) and the center of the large pore diameter (L3) of the through hole located in the second outer area (EA2) allows the organic deposition material to flow to the second outer area (EA2). It may be the same or similar to the radiating direction or radiating angle.

Each of the plurality of through holes located in the outer area (EA) may include a separation distance between the center of the large pore diameter and the center of the small pore diameter that increases as the distance from the central area (CA) increases. Here, the separation distance between the center of the large pore diameter and the center of the small pore diameter may mean the separation distance when observed on a plane.

Additionally, the separation distance between two adjacent ribs LB located in the central area CA may include a different part from the separation distance between two adjacent ribs LB located in the outer area EA. Here, the separation distance may mean the distance between the ends where the large pore diameters of the adjacent first ribs (LB) are formed and the ends where the large pore diameters of the second ribs (LB) are formed, measured in one direction.

The area of the island portion located in the central area (CA) may be different from the area of the island portion located in the outer area (EA). The area of the island portion located in the central area (CA) may be larger than the area of the island portion located in the outer area (EA). That is, the larger hole diameter of each through hole located in the outer area (EA) is overetched than the larger hole diameter located in the central area as the distance from the central area (CA) increases, so the area of the island portion located in the outer area (EA) may be smaller than the area of the island portion located in the central area (CA). For example, an island may refer to a second surface of an unetched deposition mask located between any adjacent first and second through holes.

Meanwhile, the diameter of the island located in the central area (CA) may include an area different from the diameter of the island located in the outer area (EA). The island diameter of the outer area (EA) may include an area smaller than the island diameter of the central area (CA). Here, the diameter of the island may mean the maximum diameter of the non-etched surface of any one island portion surrounded by different through holes.

The deposition mask according to the third embodiment may include an area where the height of the lip LB located in the central area CA is different from that of the lip LB located in the outer area EA.

The carding hole height SH1 of the lip LB located in the central area CA may include an area corresponding to the carding hole height SH2 of the lip LB located in the first outer area EA1. The carding hole height SH1 of the lip LB located in the central area CA may include an area corresponding to the carding hole height SH3 of the lip LB located in the second outer area EA2. In addition, the carding hole height SH2 of the lip LB located in the first outer area EA1 may include an area corresponding to the carding hole height SH3 of the lip LB located in the second outer area EA2. You can. At this time, the small hole height refers to the distance from the connection part where the inner hole is located to the first surface, and the distance can be measured in a direction perpendicular to the first surface.

The face hole height LH1 of the lip LB located in the central area CA may include a different area from the face hole height LH2 of the lip LB located in the first outer area EA1. The facing hole height LH1 of the lip LB located in the central area CA may include a larger area than the facing hole height LH2 of the lip LB located in the first outer area EA1.

The facing hole height LH1 of the lip LB located in the central area CA may include a different area from the facing hole height LH3 of the lip LB located in the second outer area EA2. The facing hole height LH1 of the lip LB located in the central area CA may include a larger area than the facing hole height LH3 of the lip LB located in the second outer area EA2.

In addition, the face hole height LH2 of the lip LB located in the first outer area EA1 corresponds to or is different from the face hole height LH3 of the lip LB located in the second outside area EA2. may include. Since the height of the large pore diameter of the plurality of through holes located in the first outer area (EA1) and/or the second outer area (EA2) is determined depending on the distance from the central area (CA), the organic material The foramen diameter of the outer area, which may be located close to the supply source, may have the same height as the foramen diameter of the central area. On the other hand, the large pore diameter located at the outermost (end) of the outer area, which is located far from the organic material source, may be lower in height than the large pore diameter in the central area. Accordingly, it is possible to prevent a decrease in deposition efficiency due to the lip LB covering the supplied organic material.

That is, the deposition mask of the third embodiment may include an area where the thickness of the lip LB located in the outer area CA gradually becomes smaller as the thickness moves away from the central area. The deposition mask according to the second embodiment can increase deposition efficiency by lowering the height of the lip LB away from the central area CA.

Additionally, the deposition mask according to the third embodiment may include an area where the pore diameter angle of the lip LB located in the central area CA is different from the pore diameter angle of the lip LB located in the outer area EA. there is.

That is, the deposition mask according to the third embodiment can adjust the angle of the pore diameter to facilitate deposition of the organic material based on the organic material source through misalignment of the small pore diameter and the large pore diameter.

The central area (CA) can be deposited through alignment of the center of the large pore diameter and the center of the small pore diameter. Meanwhile, the plurality of through holes located in the outer area (EA) can gradually move the position of the large hole diameter toward both ends based on the central area (CA) as the distance from the central area (CA) increases. there is. At this time, the direction of the large pore diameter moving (shifted) based on the small pore diameter of each through hole as it moves from the central area CA toward the end of the first outer area EA1 is from the central area CA. As the second outer area EA2 moves toward the end, the direction of the large pore diameter may be opposite to that of the large pore diameter that moves (shifts) based on the small pore diameter of each through hole. Here, being opposite may mean directions that are 180 degrees from each other, to the right and to the left. That is, the embodiment may form a pore by adjusting the angle of the pore to facilitate deposition of the organic material. Accordingly, even through holes located at the outermost (end) of the outer area (EA) may have excellent deposition efficiency.

That is, the third embodiment can increase deposition efficiency by adjusting the pore diameter angle and lip height.

With reference to FIG. 11, the relative positions of small holes and large holes of the deposition mask according to the first or third embodiment will be described.

Referring to FIG. 11A, the point where the x-axis and y-axis intersect is the central area (CA). It can be seen that the centers of the small hole (S1) and the large hole (L1) located in the central area (CA) are aligned. Meanwhile, moving from the central area CA in the -x-axis direction, the large hole L2 may include an area that is misaligned with the small hole S2. As it moves from the central area CA in the +x-axis direction, the large hole L3 may include an area that is misaligned with the small hole S2. The misalignment direction of the large hole L2 located in the -x-axis direction may be opposite to the misalignment direction of the large hole L3 located in the +x-axis direction. At this time, the small surface hole S2 and the large surface hole L2 located in the -x-axis direction may be surface holes located in the first outer area EA1. The small hole (S3) and the large hole (L3) located in the +x-axis direction may be surface holes located in the second outer area (EA2).

Meanwhile, moving from the central area CA in the +y-axis direction, the large hole L4 may include an area that is misaligned with the small hole S4. As it moves from the central area CA in the -y-axis direction, the large hole L5 may include an area that is misaligned with the small hole S5. The misalignment direction of the large hole L4 located in the +y-axis direction may be opposite to the misalignment direction of the large hole L5 located in the -y-axis direction.

Referring to FIG. 11B, misalignment according to distance based on the central area of the deposition mask will be described.

In this specification, the gradual change in size or height depending on the distance from the central area refers to the change in size between the through hole that is relatively close to the central area and the through hole that is relatively far from the central area in different through holes. It may be.

For example, in the outer area, there is a first through hole having a first separation distance from the central area, a second through hole having a second separation distance from the central area, and a third through hole having a third separation distance from the central area. , assuming that the order is 1st separation distance < 2nd separation distance < 3rd separation distance, the gradual change is that the misalignment of the second through hole is larger than that of the first through hole, and the misalignment of the third through hole is larger than that of the second through hole. Misalignment can mean big things. Alternatively, the gradual change may be such that the height of the lip LB adjacent to the second through hole is smaller than the height of the lip LB adjacent to the first through hole, and the height of the lip LB adjacent to the second through hole is smaller than the height of the lip LB adjacent to the second through hole. This may mean that the height of the lip LB adjacent to the hole is small. The embodiment is not limited to this, and of course it may mean that there is a difference between the side close to the central area and the side far away from the central area in one through hole.

Referring to FIG. 11C, the misalignment evaluation method will be described.

Miss Align is cannot exceed If the misalignment exceeds this, a pinhole is formed due to overshifting of the large bore diameter. At this time, DΨ is the size of the large hole, and dΨ is the size of the small hole.

Referring to FIG. 12, the deposition mask according to the first embodiment will be described in more detail.

In the deposition mask according to the first embodiment, the center of the small pore diameter and the center of the large pore diameter may be aligned in a portion of the outer region. In a portion of the outer area, the center of the small pore diameter and the center of the large pore diameter may include an area where the center is misaligned.

Referring to FIG. 12A, the center of the small pore diameter (S1) and the center of the large pore diameter (L1) located in the central area (CA) may be aligned. The center of the small pore diameter S2a and the center of the large pore diameter L2a may be aligned in the first through hole in the portion adjacent to the central area CA in the first outer area EA1. The center of the small pore diameter S3a and the center of the large pore diameter L3a may be aligned in the first through hole in the portion adjacent to the central area CA in the second outer area EA2. That is, at least a portion of the outer area may include the center of the large pore diameter and the center of the small pore diameter matching up and down. As the distance from the organic material source in the outer area is closer, the centers of the small pore diameter and the large pore diameter of the through hole at a location with high deposition efficiency can be aligned.

As the first outer area EA1 moves away from the central area CA, the misalignment of the center of the large pore diameter may increase with respect to the center of the small pore diameter. In the first outer area (EA1), the second through hole located further away from the central area (CA) than the first through hole has the center of the large pore diameter (L2b) misaligned with respect to the center of the small pore diameter (S2b). Can include areas. The third through hole in the first outer area (EA1), which is farther from the central area (CA) than the second through hole, is misaligned with the center of the large hole diameter (L2c) based on the center of the small hole diameter (S2c). Could be bigger.

As the second outer area EA2 moves away from the central area CA, the misalignment of the center of the large pore diameter may increase with respect to the center of the small pore diameter. In the second outer area (EA2), the second through hole located further away from the central area (CA) than the first through hole has the center of the large hole diameter (L3b) misaligned with respect to the center of the small hole diameter (S3b). Can include areas. In the second outer area (EA2), the third through hole located farther from the central area (CA) than the second through hole is misaligned with the center of the large hole diameter (L3c) based on the center of the small hole diameter (S3c). Could be bigger.

In the first embodiment, as the plurality of through holes located in the first outer region become farther away from the central region, the center of the large pore diameter is located closer to the central region than the center of the small pore diameter, and the plurality of through holes located in the second outer region are located closer to the central region. As the hole moves away from the central area, the center of the large pore diameter may be located closer to the central area than the center of the small pore diameter.

For example, based on the effective area of 500mm of 4.5G, the outer area (EA) including the misalignment area is 1/2 of the first outer area (EA1) located in the -x-axis direction, and the +x-axis It may be 1/2 of the second outer area EA2 located in the direction. However, the embodiment is not limited to this, and the range of the outer area may vary depending on the size and resolution of the deposition mask.

Referring to FIG. 12B, it can be seen that the deposition pattern is formed uniformly throughout the entire through hole of the deposition mask as the area located at the end of the outer area includes a misaligned area.

Referring to FIG. 13, the deposition mask according to the second embodiment will be described in more detail.

In the deposition mask according to the second embodiment, the size of the large hole diameter and the height of the lip may change in a portion of the outer region.

Referring to FIG. 13A, the size of the small pore diameter (S1) and the large pore diameter (L1) located in the central area (CA) is the size of the first through hole adjacent to the central area (CA) in the first outer area (EA1). These branches may correspond to the sizes of the small pore diameter (S2a) and the large pore diameter (L2a), respectively. The size of the small pore diameter (S1) and the large pore diameter (L1) located in the central area (CA) is the small pore diameter (S3a) of the first through hole adjacent to the central area (CA) in the second outer area (EA2). ) and the size of the large hole diameter (L3a), respectively. That is, at least a portion of the outer area may include an area where the size of the large hole diameter corresponds to the size of the central area. As the distance from the organic material source in the outer area is closer, the large pore diameter at a location with high deposition efficiency can be arranged to be the same size as the central area.

As the first outer area EA1 moves away from the central area CA, the size of the large hole may increase. The large hole diameter L2b of the second through hole located further away from the central area CA may be larger than the large hole diameter L2a of the first through hole in the first outer area EA1. The large hole diameter L2c of the third through hole located further away from the central area CA may be larger than the large hole diameter L2b of the second through hole in the first outer area EA1.

As the second outer area EA2 moves away from the central area CA, the size of the large hole may increase. The size of the large bore diameter L3b of the second through hole located further away from the central area CA may be larger than the large hole diameter L3a of the first through hole in the second outer area EA2. The large hole diameter L3c of the third through hole located further away from the central area CA may be larger than the large hole diameter L3b of the second through hole in the first outer area EA1.

For example, based on the 500mm effective area of 4.5G, the outer area (EA) where changes in the size of the large hole diameter and the size of the lip appear is 1/2 of the first outer area (EA1) located at the end of the -x-axis direction. It is an area, and may be half of the second outer area (EA2) located at the end of the +x-axis direction. However, the embodiment is not limited to this, and the range of the outer area may vary depending on the size and resolution of the deposition mask.

Referring to FIG. 13B, in the deposition mask according to the second embodiment, the plurality of through holes located at the ends of the first and second outer regions have large pore diameters that increase as the distance from the central region increases, and a lip ( It can be seen that as the height of LB) decreases, deposition efficiency improves.

The difference (TG) between the thickness of the lip (LB) located in the central area (CA) and the thickness of the lip (LB) located in the outer area (EA) is the thickness of the base substrate of the deposition mask - (thickness of the base substrate * 2/3 ) can be. Here, the thickness of the lip LB located in the outer area EA can be measured in an area located at the outermost edge of the outer area EA and having the lowest thickness.

For example, when using a base substrate made of Invar material with a thickness of 30㎛, the difference (TG) between the thickness of the lip (LB) located in the central area (CA) and the thickness of the lip (LB) located in the outer area (EA) may include a range of around 10㎛. For example, the difference (TG) between the thickness of the lip LB located in the central area CA and the thickness of the lip LB located in the outer area EA may be 8 μm to 12 μm. For example, the difference (TG) between the thickness of the lip LB located in the central area CA and the thickness of the lip LB located in the outer area EA may be 9 μm to 11 μm.

The difference (TG) between the thickness of the lip (LB) located in the central area (CA) and the thickness of the lip (LB) located in the outer area (EA) can be set so that the size of the island is maintained at a diameter of 5 μm or more. If the island diameter is less than 5㎛, a problem may arise where the size of the pore becomes larger than the design due to the disappearance of the island.

FIG. 13C is a photograph of an island in the central area of a deposition mask according to the second embodiment. Referring to FIG. 13C, it was confirmed that the diameter of the island ID1 in the central area of the deposition mask according to the second embodiment was about 10 μm.

FIG. 13D is a photograph of an island in the first outer region of the deposition mask according to the second embodiment. Referring to FIG. 13D, it was confirmed that the diameter of the island ID2 in the first outer region of the deposition mask according to the second embodiment was about 5㎛.

Figure 13e is a photograph of the island of the second outer region of the deposition mask according to the second embodiment. Referring to FIG. 13E, it was confirmed that the diameter of the island ID3 in the second outer region of the deposition mask according to the second embodiment was about 5㎛.

Referring to FIG. 14, the deposition mask according to the third embodiment will be described in more detail.

In the deposition mask according to the third embodiment, the center of the small pore diameter and the center of the large pore diameter may be aligned in a portion of the outer region. In a portion of the outer area, the center of the small pore diameter and the center of the large pore diameter may include an area where the center is misaligned.

Referring to FIG. 14A, the center of the small pore diameter (S1) and the center of the large pore diameter (L1) located in the central area (CA) may be aligned. The center of the small pore diameter S2a and the center of the large pore diameter L2a may be aligned in the first through hole in the portion adjacent to the central area CA in the first outer area EA1. The center of the small pore diameter S3a and the center of the large pore diameter L3a may be aligned in the first through hole in the portion adjacent to the central area CA in the second outer area EA2. That is, at least a portion of the outer area may include the center of the large pore diameter and the center of the small pore diameter matching up and down. As the distance from the organic material source in the outer area is closer, the centers of the small pore diameter and the large pore diameter of the through hole at a location with high deposition efficiency can be aligned.

As the first outer area EA1 moves away from the central area CA, the misalignment of the center of the large pore diameter may increase with respect to the center of the small pore diameter. In the first outer area (EA1), the second through hole located further away from the central area (CA) than the first through hole has the center of the large pore diameter (L2b) misaligned with respect to the center of the small pore diameter (S2b). Can include areas. The third through hole in the first outer area (EA1), which is farther from the central area (CA) than the second through hole, is misaligned with the center of the large hole diameter (L2c) based on the center of the small hole diameter (S2c). Could be bigger.

As the second outer area EA2 moves away from the central area CA, the misalignment of the center of the large pore diameter may increase with respect to the center of the small pore diameter. In the second outer area (EA2), the second through hole located further away from the central area (CA) than the first through hole has the center of the large hole diameter (L3b) misaligned with respect to the center of the small hole diameter (S3b). Can include areas. In the second outer area (EA2), the third through hole located farther from the central area (CA) than the second through hole is misaligned with the center of the large hole diameter (L3c) based on the center of the small hole diameter (S3c). Could be bigger.

In the third embodiment, as the plurality of through holes located in the first outer region become farther away from the central region, the center of the large pore diameter is located closer to the central region than the center of the small pore diameter, and the plurality of through holes located in the second outer region are located closer to the central region. As the hole moves away from the central area, the center of the large pore diameter may be located closer to the central area than the center of the small pore diameter.

For example, based on the 500mm effective area of 4.5G, the outer area (EA) including the misaligned area is 1/2 of the first outer area (EA1) located at the end of the -x-axis direction, It may be 1/2 of the second outer area (EA2) located at the end of the +x-axis direction. However, the embodiment is not limited to this, and the range of the outer area may vary depending on the size and resolution of the deposition mask.

In the deposition mask according to the third embodiment, the size of the large hole diameter and the height of the lip may change in a portion of the outer region.

The size of the small pore diameter (S1) and the large pore diameter (L1) located in the central area (CA) is the small pore diameter (S2a) of the first through hole in the portion adjacent to the central area (CA) in the first outer area (EA1). ) and the size of the large hole diameter (L2a), respectively. The size of the small pore diameter (S1) and the large pore diameter (L1) located in the central area (CA) is the small pore diameter (S3a) of the first through hole adjacent to the central area (CA) in the second outer area (EA2). ) and the size of the large hole diameter (L3a), respectively. That is, at least a portion of the outer area may include an area where the size of the large hole diameter corresponds to the size of the central area. As the distance from the organic material source in the outer area is closer, the large pore diameter at a location with high deposition efficiency can be arranged to be the same size as the central area.

As the first outer area EA1 moves away from the central area CA, the size of the large hole may increase. The large hole diameter L2b of the second through hole located further away from the central area CA may be larger than the large hole diameter L2a of the first through hole in the first outer area EA1. The large hole diameter L2c of the third through hole located further away from the central area CA may be larger than the large hole diameter L2b of the second through hole in the first outer area EA1.

As the second outer area EA2 moves away from the central area CA, the size of the large hole may increase. The size of the large bore diameter L3b of the second through hole located further away from the central area CA may be larger than the large hole diameter L3a of the first through hole in the second outer area EA2. The large hole diameter L3c of the third through hole located further away from the central area CA may be larger than the large hole diameter L3b of the second through hole in the first outer area EA1.

For example, based on the 500mm effective area of 4.5G, the outer area (EA) where changes in the size of the large hole diameter and the size of the lip appear is 1/2 of the first outer area (EA1) located at the end of the -x-axis direction. It is an area, and may be half of the second outer area (EA2) located at the end of the +x-axis direction. However, the embodiment is not limited to this, and the range of the outer area may vary depending on the size and resolution of the deposition mask.

Referring to FIG. 14B, it can be seen that the deposition pattern is formed uniformly throughout the entire through hole of the deposition mask as the area located at the end of the outer area includes a misaligned area. In addition, in the deposition mask according to the third embodiment, as the plurality of through holes located at the ends of the first and second outer regions move away from the central region, the size of the large hole increases, and the height of the lip LB increases. It can be seen that as the decreases, the deposition efficiency improves.

12 to 14 are for explaining the arrangement of through holes, and of course, the deposition mask according to the embodiment is not limited to the number of through holes in the drawing.

When measuring the horizontal diameter (Cx) and the vertical diameter (Cy) of a reference hole, which is any one through hole, the horizontal diameter between the holes (a total of 6 in the drawing) adjacent to the reference hole is measured. The deviation between the diameters (Cx) in the direction and the deviation between the diameters (Cy) in the vertical direction may be implemented as 2% to 10%. That is, if the size difference between adjacent holes of one reference hole is 2% to 10%, uniformity of deposition can be secured.

For example, the size difference between the reference hole and the adjacent holes may be 4% to 9%. For example, the size difference between the reference hole and the adjacent holes may be 5% to 7%. For example, the size difference between the reference hole and the adjacent holes may be 2% to 5%.

If the size difference between the reference hole and the adjacent holes is less than 2%, the moire occurrence rate may increase in the OLED panel after deposition. If the size difference between the reference hole and the adjacent holes exceeds 10%, the occurrence rate of color unevenness in the OLED panel after deposition may increase.

The average deviation of the through hole diameter may be ±5㎛. For example, the average deviation of the through hole diameter may be ±3㎛. In the embodiment, deposition efficiency can be improved by implementing a size difference between the reference hole and the adjacent holes within ±3㎛.

The through holes may be arranged in a row or staggered depending on the direction.

For example, the through holes may be arranged in a row along the vertical axis and in a row along the horizontal axis. For example, the through holes may be arranged in a row on the vertical axis, and may be arranged to stagger each other on the horizontal axis.

Alternatively, of course, the through holes may be arranged to stagger each other on the longitudinal axis, and may be arranged in a row on the horizontal axis.

The first diameter (Cx) measured in the horizontal direction and the second diameter (Cy) measured in the vertical direction of the through hole may correspond to or differ from each other. The through hole may have a third diameter measured in a first diagonal direction between the horizontal and vertical directions and a fourth diameter measured in a second diagonal direction intersecting the first diagonal direction, which may correspond to or be different from each other. The through hole may be round.

The deposition mask can be formed by etching a base metal plate. The base metal plate may include a metal material. The base metal plate may include a nickel alloy. For example, the base metal plate may be an alloy of nickel and iron. At this time, nickel may be about 35% by weight to about 37% by weight, and iron may be about 63% by weight to about 65% by weight. For example, the base metal plate 100a contains about 35% to about 37% by weight of nickel, about 63% to about 65% by weight of iron, and trace amounts of C, Si, S, P, Cr, Mo, Mn, It may include Invar containing at least one of Ti, Co, Cu, Fe, Ag, Nb, V, In, and Sb. Here, a trace amount may mean 1% by weight or less. In detail, here, a trace amount may mean 0.5% by weight or less. However, the base substrate is not limited to this, and may include various metal materials.

Nickel alloys such as Invar have a small thermal expansion coefficient, so they have the advantage of increasing the lifespan of the deposition mask. However, nickel alloys such as Invar have the problem of difficulty in uniform etching.

That is, in nickel alloys such as Invar, as the etching rate is fast in the early stages of etching, through holes may grow laterally, and thus, defilming of the photoresist layer may occur. Additionally, when etching Invar, as the size of the through hole increases, it may be difficult to form a fine-sized through hole. Additionally, because through holes are formed non-uniformly, the manufacturing yield of the deposition mask may decrease.

Accordingly, the embodiment may further dispose a surface layer for surface modification with different composition, content, crystal structure, and corrosion rate on the surface of the base metal plate. Here, surface modification may mean a layer made of various materials disposed on the surface to improve the etch factor.

The thickness of the deposition mask may be 5 μm to 50 μm. For example, the thickness of the deposition mask 100 may be 5㎛ to 30㎛. For example, the thickness of the deposition mask 100 may be 5um to 25um. If the thickness of the metal plate 100 is less than 5㎛, manufacturing efficiency may be low.

If the thickness of the metal plate 100 exceeds 50㎛, the process efficiency for forming the through hole may be reduced.

The features, structures, effects, etc. described in the above-described embodiments are included in at least one embodiment of the present invention and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects, etc. illustrated in each embodiment can be combined or modified and implemented in other embodiments by a person with ordinary knowledge in the field to which the embodiments belong. Therefore, contents related to such combinations and modifications should be construed as being included in the scope of the present invention.

In addition, although the description has been made focusing on the embodiments above, this is only an example and does not limit the present invention, and those skilled in the art will understand the above examples without departing from the essential characteristics of the present embodiments. You will be able to see that various modifications and applications are possible. For example, each component specifically shown in the embodiments can be modified and implemented. And these variations and differences in application should be construed as being included in the scope of the present invention as defined in the attached claims.

Claims (12)

In the deposition mask for OLED,
The deposition mask includes a deposition area and a non-deposition area other than the deposition area,
The deposition area is spaced apart in the longitudinal direction and includes an effective area in which a plurality of through holes are formed and a separation area other than the effective area,
The effective area is,
A carding hole formed on one side;
a facing hole formed on the other side opposite to the one side; and
It includes a plurality of through holes including a communication portion where the boundary between the small hole and the large hole is connected,
The effective area is,
a central region disposed in the center of the deposition region;
At least two outer regions are spaced apart from the central region with the separation region in between, and are disposed on the outer side of the deposition region,
In the through hole formed in the central area, the center of the large pore diameter coincides with the center of the small pore diameter,
The center of the large hole diameter and the center of the small hole diameter of the through hole formed in the outer area do not coincide,
The large pore diameter of the outer area has different first and second slopes on both sides of the longitudinal direction based on the center of the small pore diameter of the outer area,
deposition mask According to claim 1,
a deposition mask, wherein the central region includes at least two active regions spaced apart by an isolation region. According to clause 1,
A deposition mask in which the center of a large pore diameter and the center of a small pore diameter of at least some of the through holes formed in the outer area coincide with each other. According to clause 1,
A deposition mask in which the separation distance between the center of the large pore diameter and the center of the small pore diameter increases as the distance from the central region of the through hole formed in the outer region increases. According to any one of claims 1 to 4,
The through hole formed in the outer area is,
A deposition mask in which the center of a large pore diameter is located closer to the central region than the center of a small pore diameter as the distance from the central region increases. According to any one of claims 1 to 4,
The size of the small pore diameter of the through hole formed in the central region is the same as the size of the small pore diameter formed in the outer region,
A deposition mask wherein the size of the large hole formed in the central area is different from the size of the large hole formed in the outer area. According to any one of claims 1 to 4,
The effective area includes a rib connecting a plurality of facing holes,
Comprising a region where the pore diameter angle of the rib located in the central region and the pore diameter angle of the lip located in the outer region are different from each other,
A deposition mask wherein the thickness of the rib measured in the central area is greater than the thickness of the lip measured in the outer area. According to claim 7,
A deposition mask in which the lip formed in the outer area becomes smaller as it moves away from the central area. According to any one of claims 1 to 4,
The effective area includes an island portion between the plurality of through holes,
A deposition mask wherein the diameter of the island in the outer area is smaller than the diameter of the island in the central area. delete delete delete

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