KR20200007264A - Deposition mask for OLED - Google Patents

Abstract

A deposition mask for an OLED of an embodiment comprises a first surface and a second surface which are opposite to each other, and includes a deposition pattern region and a non-deposition region having a plurality of through-holes formed in communication with a small-surface hole on the first surface and a large-surface hole on the second surface, wherein the deposition pattern region comprises three or more effective regions, two outermost effective regions are an outer region, effective regions except for the outer region are a central region, and a through-hole located in the central region can comprise a part having a different shape from a through-hole located in the outer region. Therefore, the uniformity of an OLED deposition pattern can be improved.

Description

Deposition mask for OLED

Embodiments relate to deposition masks for OLEDs. That is, an OLED panel can be manufactured using the deposition mask according to the embodiment.

As a display device having a high resolution and low power is required, various display devices such as a liquid crystal display and an electroluminescent display are being developed.

The electroluminescent display has been in the spotlight as a next generation display device in accordance with excellent characteristics such as low light emission, low power consumption, and high resolution as compared to a liquid crystal display device.

The EL display device includes an organic light emitting display device and an inorganic light emitting display device. That is, the organic light emitting display device and the inorganic light emitting display device may be classified according to the material of the light emitting layer.

Among them, the organic light emitting diode display is attracting attention because of its wide viewing angle, fast response speed, and low power.

The organic material constituting the light emitting layer may have a pattern for forming pixels on the substrate by a fine metal mask method.

In this case, the fine metal mask, that is, the deposition mask may have a through hole corresponding to the pattern to be formed on the substrate. After aligning the fine metal mask on the substrate and depositing the organic material, the red to form the pixel is formed. Red, Green, and Blue patterns can be formed.

Recently, display devices of ultra high definition (UHD) have been required in various electronic devices such as virtual reality (VR) devices. Accordingly, there is a need for a fine metal mask having a through hole of a minute size capable of forming an ultra high resolution (UHD class) pattern.

In the metal plate that may be used as the deposition mask, a plurality of through holes may be formed by an etching process.

In this case, when all the through holes in the deposition mask have the same shape, the uniformity of the deposition may decrease. Therefore, there is a problem that the process efficiency is lowered as the deposition efficiency of the formed pattern is lowered.

On the other hand, it is difficult to uniformly form an OLED deposition pattern capable of forming a pattern of high resolution or ultra high resolution (UHD).

Therefore, there is a need for a deposition mask for an OLED of a new structure.

Embodiments relate to deposition masks for forming a uniform OLED deposition pattern.

To this end, the embodiment may provide a deposition mask for an OLED including a plurality of through holes having different shapes depending on positions.

The deposition mask for an OLED of the embodiment includes a first pattern and a second surface facing each other, the deposition pattern region including a plurality of through-holes formed in communication with the small hole on the first surface and the surface hole on the second surface and And a non-deposition region, wherein the deposition pattern region includes three or more effective regions, and the two outermost effective regions are outer regions, and the effective regions except the outer region are central regions, The located through hole may include a portion having a shape different from that of the through hole located in the outer region.

The deposition mask for an OLED according to the embodiment is formed so that the shape of the through-holes in the outer region is different from the through-holes in the central region, thereby improving the uniformity of the OLED deposition pattern.

The deposition mask for an OLED according to the embodiment can solve the problem that the deposition efficiency is reduced as the outermost through holes are far from the organic material source and the angle with the organic material source is far from the vertical.

Uniformity of the OLED pattern formed through the deposition mask for the OLED according to the embodiment may be improved.

In addition, the deposition mask for an OLED according to the embodiment can improve the process efficiency of forming a deposition pattern of high resolution to ultra-high resolution.

1 to 3 are conceptual diagrams for describing a process of depositing an organic material on a substrate.
4 to 6 are plan views illustrating a deposition mask for an OLED according to an embodiment.
7A is a sectional view of a deposition mask according to a comparative example.
7B is a view showing the relative positions of the inner surface, the small surface and the large surface of the deposition mask according to a comparative example observed in the plane.
8A is a sectional view showing a deposition mask according to the first embodiment.
FIG. 8B is a view showing the relative positions of the inner holes, the small holes and the facing holes of the deposition mask according to the first embodiment when viewed from a plane.
9A is a sectional view showing a deposition mask according to the second embodiment.
9B is a view showing the relative positions of the inner surface, the small surface and the large surface of the deposition mask according to the second embodiment of the planar view.
10A is a sectional view of a deposition mask according to a third embodiment.
FIG. 10B is a view showing the relative positions of the inner holes, the small holes and the facing holes of the deposition mask according to the third embodiment viewed from the plane.
11A is a view showing the relative positions of the small holes and the facing holes of the deposition mask according to the first embodiment or the third embodiment when viewed in a plane.
FIG. 11B is a graph showing misalignment with distance with respect to the center area of the deposition mask. FIG.
FIG. 11C is a view showing misalignment of the small hole and the facing hole of the deposition mask according to the first or third embodiment observed in cross section.
12A is a plan view of a deposition mask and a shape of a small hole and a facing hole in a central area and an outer area according to the first embodiment.
12B is a sectional view of the deposition mask according to the first embodiment.
FIG. 13A is a plan view of a deposition mask and a shape of a small hole and a facing hole in a central area and an outer area according to a second embodiment.
13B is a sectional view of the deposition mask according to the second embodiment.
13C is a photograph of an island of a central region of a deposition mask according to a second embodiment.
13D is a photograph of an island of a first outer region of the deposition mask according to the second embodiment.
13E is a photograph of an island of a second outer region of the deposition mask according to the second embodiment.
FIG. 14A is a plan view of a deposition mask and a shape of a small hole and a facing hole in a central area and an outer area according to a third embodiment.
14B is a sectional view of a deposition mask according to a third embodiment.

 Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the technical idea of the present invention is not limited to some embodiments described, but may be embodied in various different forms, and within the technical idea of the present invention, one or more of the components between the embodiments May be optionally combined and substituted. In addition, the terms (including technical and scientific terms) used in the embodiments of the present invention may be generally understood by those skilled in the art to which the present invention pertains, unless specifically defined and described. The terms commonly used, such as terms defined in advance, may be interpreted as meanings in consideration of the contextual meaning of the related art. In addition, the terms used in the embodiments of the present invention are intended to describe the embodiments and are not intended to limit the present invention. In this specification, the singular may also include the plural unless specifically stated otherwise, and when combined with “A, and B, C, at least one (or more than one)”, combine as A, B, C. It can include one or more of all possible combinations. In addition, in describing the components of the embodiments of the present disclosure, terms such as first, second, A, B, (a), and (b) may be used. These terms are only to distinguish the components from other components, and the terms are not limited to the nature, order, order, or the like of the components. And when a component is described as being 'connected', 'coupled' or 'connected' to another component, the component is not only connected, coupled or connected directly to the other component, It may also include the case where 'connected', 'coupled' or 'connected' due to another component between the other components. In addition, when described as being formed or disposed on the "top" or "bottom" of each component, the top (bottom) or the bottom (bottom) is not only when the two components are in direct contact with each other, but also one. It also includes a case where the above-described further components are formed or disposed between two components. In addition, when expressed as "up (up) or down (down)" may include the meaning of the down direction as well as the up direction based on one component.

A process of depositing an organic material on a substrate will be described with reference to FIGS. 1 to 3.

1 is a view illustrating an organic material deposition apparatus including a deposition mask 100 according to an embodiment.

The organic material deposition apparatus may include a deposition mask 100, a mask frame 200, a substrate 300, an organic material deposition container 400, and a vacuum chamber 500.

The deposition mask 100 may include a plurality of through holes TH. The deposition mask 100 may be a substrate for a deposition mask including a plurality of through holes TH. In this case, the through hole may be formed to correspond to the pattern to be formed on the substrate.

The mask frame 200 may include an opening. A plurality of through holes of the deposition mask 100 may be disposed on an area corresponding to the opening. Accordingly, an organic material supplied to the organic material deposition container 400 may be deposited on the substrate 300. The deposition mask may be disposed on and fixed to the mask frame 200. For example, the deposition mask may be stretched and fixed by welding on the mask frame 200.

1 and 2, the deposition mask 100 may be pulled in directions opposite to each other at an outermost edge of the deposition mask 100. The deposition mask 100 may be pulled in a direction in which one end of the deposition mask 100 and the other end opposite to the one end are opposite to each other in the length direction of the deposition mask 100. One end and the other end of the deposition mask 100 may be disposed to face each other in parallel. One end of the deposition mask 100 may be any one of end portions forming four sides of the deposition mask 100. For example, the deposition mask 100 may be tensioned with a force of 0.4 to 1.5 kgf. Accordingly, the tensioned deposition mask 100 may be mounted on the mask frame 200.

Next, the deposition mask 100 may fix the deposition mask 100 to the mask frame 200 by welding the side region, that is, the edge of the deposition mask 100. Next, a portion of the deposition mask 100 disposed outside the mask frame 200 may be removed by cutting or the like. For example, when the deposition mask 100 is deformed during the welding process, the deposition mask 100 is disposed in an area except for the fixed areas of the deposition mask 100 and the mask frame 200. A portion of the deposition mask may be removed.

1 and 3, the substrate 300 may be a substrate used for manufacturing a display device. Red, green, and blue patterns may be formed on the substrate 300 to form pixels having three primary colors of light.

The organic material deposition container 400 may be a crucible. An organic material may be disposed in the crucible.

As a heat source and / or a current is supplied to the crucible in the vacuum chamber 500, the organic material may be deposited on the substrate 100.

3 is an enlarged view of one through hole of the deposition mask 100.

The deposition mask 100 may include a first surface 101 and a second surface 102 facing the first surface.

The first surface 101 of the deposition mask 100 may include a first surface hole V1, and the second surface 102 of the deposition mask 100 may include a second surface hole V2. have.

The through hole may be formed by a connection portion CP in which the first surface hole V1 and the second surface hole V2 communicate. That is, a through hole may be formed by communicating a small hole on the first surface of the deposition mask 100 with a facing hole on the second surface of the deposition mask 100. The diameter of the connection part CP may be represented by an inner hole.

The diameter of the second surface hole V2 may be larger than the diameter of the first surface hole V1. In this case, the diameter of the first surface hole V1 may be measured at the first surface 101, and the diameter of the second surface hole V2 may be measured at the second surface 102.

The first surface hole V1 may be disposed toward the substrate 300. Accordingly, the first surface hole V1 may have a shape corresponding to the deposit D, that is, the pattern.

The second surface hole V2 may be disposed toward the organic material deposition container 400. Accordingly, the second surface hole V2 may accommodate the organic material supplied from the organic material deposition container 400 in a wide width, and the first surface hole V1 having a smaller width than the second surface hole V2. Through this, it is possible to quickly form a fine pattern on the substrate 300.

4 to 6 are plan views illustrating a deposition mask for an OLED according to an embodiment.

4 to 6, the deposition mask according to the embodiment may include a deposition pattern region DA and a non-deposition region NDA.

The deposition pattern region DA may be a region for depositing an organic material through the deposition pattern portion.

The deposition pattern area DA may include a plurality of effective areas EA and CA included in one deposition mask. The deposition pattern area DA may include three or more effective areas.

4 and 5, the deposition pattern area DA may include three effective areas. In this case, the two effective areas in the outermost area may be defined as the outer area EA. An effective area except the outer area EA may be defined as a central area CA. In this case, the central area CA may mean one effective area.

The outer area EA includes a first outer area EA1 positioned at one end close to the central area CA and a second outer area EA2 positioned at the other end opposite to the one end of the central area CA. can do.

Accordingly, in the longitudinal direction of the deposition mask, the effective area may be disposed in order of the first outer area EA1, the central area CA, and the second outer area EA2.

Referring to FIG. 6, the deposition pattern area DA may include four effective areas. In this case, the two effective areas in the outermost area may be defined as the outer area EA. An effective area except the outer area EA may be defined as a central area CA. In this case, the central area CA may mean two effective areas.

The outer area EA includes a first outer area EA1 positioned at one end close to the central area CA and a second outer area EA2 positioned at the other end opposite to the one end of the central area CA. can do.

Accordingly, in the longitudinal direction of the deposition mask, the effective area may be arranged in order of the first outer area EA1, the first center area CA1, the second center area CA2, and the second outer area EA2. .

The plurality of deposition pattern parts may include a first outer area EA1, a central area CA, and a second outer area EA2. The one deposition pattern part may be any one of the first outer area EA1, the central area CA, and the second outer area EA2.

In the case of a small display device such as a smart phone, one deposition pattern part included in one deposition mask may be used to form one display device. Accordingly, one deposition mask may include a plurality of deposition pattern portions, and thus may form a plurality of display devices at the same time. Therefore, the deposition mask according to the embodiment can improve the process efficiency.

Alternatively, in the case of a large display device such as a television, several deposition pattern units included in one deposition mask may be a part for forming one display device. In this case, the plurality of deposition pattern portions may be for preventing deformation due to the load of the mask.

The deposition pattern area DA may include a plurality of separation areas IA1 and IA2 included in one deposition mask.

Separation regions IA1 and IA2 may be disposed between adjacent deposition pattern portions. The separation region may be a spaced region between the plurality of deposition pattern portions. For example, a first separation area IA1 may be disposed between the first outer area EA1 and the central area CA. For example, a second separation area IA2 may be disposed between the central area CA and the second outer area EA2. The separation region may distinguish adjacent deposition pattern portions, and enable a deposition mask to support a plurality of deposition pattern portions.

The deposition mask may include non-deposition regions NDA on both sides of the deposition pattern region DA in the longitudinal direction. The deposition mask according to the embodiment may include the non-deposition region NDA on both sides of the deposition pattern region DA in the horizontal direction.

The non-deposition region NDA of the deposition mask may be a region not involved in deposition.

The non-deposition region NDA may include frame fixing regions FA1 and FA2 for fixing to the mask frame. For example, the non-deposition region NDA of the deposition mask may include a first frame fixing region FA1 on one side of the deposition pattern region DA, and the one side of the deposition pattern region DA. The second frame fixing area FA2 may be included on the other side opposite to the second frame fixing area FA2. The first frame fixing area FA1 and the second frame fixing area FA2 may be areas fixed to the mask frame by welding.

The non-deposition region NDA may include half etching portions HF1 and HF2. For example, the non-deposition region NDA of the deposition mask may include a first half etching portion HF1 on one side of the deposition pattern region DA, and the one side of the deposition pattern region DA. The second half etching portion HF2 may be included on the other side opposite to the second half etching portion HF2. The first half etching portion HF1 and the second half etching portion HF2 may be regions where grooves are formed in the depth direction of the deposition mask. The first half-etching portion HF1 and the second half-etching portion HF2 may have grooves having a thickness of about 1/2 of the deposition mask, thereby dispersing stress during stretching of the deposition mask.

In addition, the half etching portion may be formed at the same time when forming the first surface hole or the second surface hole. This can improve process efficiency.

Meanwhile, the half etching portion may be formed in an ineffective region which is a region other than the effective region of the deposition pattern region DA. The half etched portions may be disposed in plural or partly distributed over all or a part of the ineffective region in order to disperse the stress during the stretching of the deposition mask.

In addition, the half etching portion may be formed in the frame fixing region and / or the peripheral region of the frame fixing region. As a result, it is possible to uniformly distribute the stress of the deposition mask generated when the deposition mask is fixed to the frame and / or when the deposition mask is deposited after the deposition mask is fixed to the frame.

Frame fixing areas FA1 and FA2 for fixing to the mask frame of the non-deposited area NDA are formed with the half-etching parts HF1 and HF2 and the half-etching parts HF1 and HF2 of the non-deposited area NDA. It may be disposed between the effective area of the adjacent deposition pattern area DA. For example, the first frame fixing area FA1 is adjacent to the first half etching part HF1 and the first half etching part HF1 of the non-deposition area NDA. It can be arranged between. For example, the second frame fixing area FA2 may include the second half etching part HF2 of the non-deposition area NDA and the deposition pattern area DA adjacent to the second half etching part HF2. It may be disposed between the second outer area EA2. Accordingly, the plurality of deposition pattern portions can be fixed at the same time.

The deposition mask may include semicircular openings at both ends of the horizontal direction X. The non-deposition region NDA of the deposition mask may include one semicircular open portion at each end in the horizontal direction. For example, the non-deposition region NDA of the deposition mask may include an open portion in which a center of the vertical direction Y is open at one side of the horizontal direction. For example, the non-deposition region NDA of the deposition mask may include an open portion whose center in the vertical direction is opened on the other side opposite to the one side in the horizontal direction. That is, both ends of the deposition mask may include an open portion at a half point of the vertical length. For example, both ends of the deposition mask may be shaped like a horseshoe.

The half etching portion may be formed in various shapes.

Referring to FIG. 4, the half etching portion may include a semi-circular groove portion. The groove may be formed on at least one surface of the first surface 101 or the second surface 102 of the deposition mask. Preferably, the half etching portion may be formed on a surface corresponding to the first surface hole (the surface side to be deposited). Accordingly, the half etching portion may disperse the stress that may be caused by the size difference between the first surface hole and the second surface hole.

Alternatively, the half etching portion may be formed on both surfaces of the first and second surfaces to disperse the stresses of the first and second surfaces. In this case, the half etching region of the half etching portion may be wider in a plane corresponding to the first surface hole (the surface side to be deposited). That is, the deposition mask according to the embodiment may include the half-etching portion as the grooves are formed in the first and second surfaces of the deposition mask, respectively. In detail, the depth of the groove of the half etching portion formed in the first surface may be greater than the depth of the groove of the half etching portion formed in the second surface. Accordingly, the half etching portion may disperse the stress that may be caused by the size difference between the first surface hole and the second surface hole. Formation of the first surface hole, the second surface hole, and the half etching portion can make the surface areas at the first and second surfaces of the deposition mask similar, and can prevent the through hole from twisting.

In addition, the groove | channel formed in the 1st surface and the 2nd surface can be formed shifting mutually. This may prevent the half etching portion from forming the through holes.

The half etching portion may include a curved surface and a plane.

The plane of the first half-etching portion HF1 may be disposed to be adjacent to the first outer region EA1, and the plane may be disposed to be parallel to the end of the deposition mask in the longitudinal direction. The curved surface of the first half etching portion HF1 may be convex toward one end in the longitudinal direction of the deposition mask. For example, the curved surface of the first half etching portion HF1 may be formed such that half of the vertical length of the deposition mask corresponds to a semi-circular radius.

The plane of the second half-etching portion HF2 may be disposed adjacent to the second outer region EA2, and the plane may be disposed horizontally with the end of the deposition mask in the longitudinal direction. The curved surface of the second half etching portion HF2 may be convex toward the other end in the longitudinal direction of the deposition mask. For example, the curved surface of the second half etching portion HF2 may be formed such that half of the vertical length of the deposition mask corresponds to a semi-circular radius.

On the other hand, the curved surface of the open portion located at both ends of the deposition mask may face the half etching portion. Accordingly, the open portions at both ends of the deposition mask may have the shortest separation distance at one half of the vertical length of the first or second half etching portion and the deposition mask.

5 and 6, the half etching portion may have a rectangular shape. The first half etching portion HF1 and the second half etching portion HF2 may have a rectangular or square shape.

The deposition mask according to the embodiment may include a plurality of half etching portions. The deposition mask according to the embodiment may include a plurality of half-etching portions in at least one of the deposition pattern region DA and the non-deposition region NDA. The deposition mask according to the embodiment may include a half etching portion in the non-effective area and / or non-deposited area.

4 to 6, the deposition mask according to the embodiment may include two half etching portions. For example, the half etching portion may include an even number of half etching portions. The deposition mask according to the embodiment may be disposed only in the non-deposition region NDA.

The half etching portion may be formed to be symmetrical in the X-axis direction or symmetrical in the Y-axis direction with respect to the center of the mask. This allows the same tensile force in both directions.

Alternatively, the deposition mask according to the embodiment may include four half etching portions. For example, the half etching portion may include an even number of half etching portions. The deposition mask according to the embodiment may include a plurality of half etching portions only in the non-deposition region NDA.

A third half etching portion HF3 may be further included between the first half etching portion HF1 and the first outer region EA1. For example, the third half etching portion HF3 may be disposed between the first frame fixing region FA1 and the first outer region EA1.

A fourth half etching portion HF4 may be further included between the second half etching portion HF2 and the second outer region EA2. For example, the fourth half etching portion HF4 may be disposed between the second frame fixing area FA2 and the second outer area EA2.

The first half etching portion HF1 disposed at a position in a horizontal direction corresponding to each other may have a shape corresponding to the second half etching portion HF2. The third half etching portion HF3 disposed at a position in the horizontal direction corresponding to each other may have a shape corresponding to the fourth half etching portion HF4.

The first half etching portion HF1 disposed at different positions may have a shape different from any one of the third half etching portion HF3 and the fourth half etching portion HF4. However, the embodiment is not limited thereto, and the first half etching portion HF1, the second half etching portion HF2, the third half etching portion HF3, and the fourth half etching portion HF4 may be formed. Of course, they can all be the same shape. In the exemplary embodiment, four half-etching parts have been described, but the half-etching parts may be formed in various shapes and various numbers within the range formed in the ineffective area. That is, the shape of the half etching portion may be any shape as long as it is formed to be symmetric with respect to the center of the horizontal direction X of the deposition mask. In addition, the half etching portion may be six or more.

The third half etching portion HF3 and the fourth half etching portion HF4 may have a rectangular shape. The third half etching portion HF3 and the fourth half etching portion HF4 may have a rectangular shape extending in the vertical direction of the deposition mask. In detail, the third half etching portion HF3 and the fourth half etching portion HF4 may have a length in the vertical direction Y longer than a length in the horizontal direction X. Accordingly, the half etching portion can effectively control the stress generated when the deposition mask is fixed to the frame.

The length of the vertical direction Y of the open portions positioned at both ends of the deposition mask may correspond to or be different from the length of the vertical direction of the half etching portion.

For example, referring to FIGS. 4 to 6, the length d1 of the planar portion of the first half-etching portion HF1 or the second half-etching portion HF2 is in the vertical direction of the open portion. It may be larger than the length d2. Alternatively, the vertical length d1 of the first half etching part HF1 or the second half etching part HF2 may correspond to the vertical length d2 of the open part.

For example, the vertical length d1 of the first half etching portion HF1 or the second half etching portion HF2 may be 80 to 200% of the vertical length d2 of the open portion. (d1: d2 = 0.8-2: 1). The vertical length d1 of the first half etching portion HF1 or the second half etching portion HF2 may be 90 to 150% of the vertical length d2 of the open portion (d1: d2). = 0.9 to 1.5: 1). The vertical length d1 of the first half etching portion HF1 or the second half etching portion HF2 may be 95 to 110% of the vertical length d2 of the open portion (d1: d2). = 0.95-1.1: 1). Preferably, the length d1 in the vertical direction of the first half etching part HF1 or the second half etching part HF2 may be 80 to 120% of the length in the vertical direction of the effective area. Thus, when tensioning the deposition mask, the stress can be evenly distributed, thereby reducing the wave deformation of the deposition mask. Therefore, the deposition mask according to the embodiment may have a uniform through hole, so that the deposition efficiency of the pattern may be improved.

7 through 10, a plurality of through holes formed in the deposition pattern region will be described.

The deposition mask may include an effective area and an invalid area. The deposition mask 100 may include an effective area including a plurality of through holes TH and ribs LB and an invalid area disposed outside the effective area.

The effective area may be an inner area when the outside of the through holes located at the outermost part of the plurality of through holes for depositing an organic material is connected. The ineffective region may be an outer region when the outer periphery of the plurality of through holes is connected to the outermost through holes for depositing an organic material.

The non-effective region is a region excluding the effective region of the deposition pattern region DA and the non-deposition region NDA.

The central area CA, the first outer area EA1 and the second outer area EA2 may each include a plurality of through holes. The central area CA, the first outer area EA1 and the second outer area EA2 may each include the same number of through holes.

First, a deposition mask according to a comparative example will be described with reference to FIG. 7.

Referring to FIG. 7A, the deposition mask according to the comparative example may have the same shape of the through hole disposed in the central area CA and the through hole disposed in the outer area EA.

In the deposition mask according to the comparative example, the size of the inner hole diameter, the small hole diameter, and the large hole diameter of the through hole located in the center area CA and the through hole located in the outer area EA may correspond.

The inner pore diameter I1 of the through hole located in the central area CA may have a size corresponding to the inner pore diameter I2 of the through hole located in the first outer area EA1. The inner pore diameter I1 of the through hole located in the central area CA may have a size corresponding to the inner pore diameter I3 of the through hole located in the second outer area EA2. In addition, the inner pore diameter I2 of the through hole disposed in the first outer region EA1 may have a size corresponding to the inner pore diameter I3 of the through hole disposed in the second outer region EA2.

The small pore diameter S1 of the through hole located in the central area CA may have a size corresponding to the small pore diameter S2 of the through hole located in the first outer area EA1. The small pore diameter S1 of the through hole located in the central area CA may have a size corresponding to the small pore diameter S3 of the through hole located in the second outer area EA2. In addition, the small hole diameter S2 of the through hole located in the first outer area EA1 may have a size corresponding to the small hole diameter S3 of the through hole located in the second outer area EA2.

The large diameter L1 of the through hole located in the central area CA may have a size corresponding to the large diameter L2 of the through hole located in the first outer area EA1. The large diameter L1 of the through hole disposed in the central area CA may have a size corresponding to the large diameter L3 of the through hole located in the second outer area EA2. In addition, the large diameter L2 of the through hole located in the first outer area EA1 may have a size corresponding to the large diameter L3 of the through hole located in the second outer area EA2.

Referring to FIG. 7B, the center of the small pore diameter S1 and the center of the large pore diameter L1 are aligned, and the center of the small pore diameter S1 located in the outer region EA is aligned with the center of the small pore diameter S1. The center of the large diameter L1 may be aligned.

That is, the center of the small hole diameter S1 and the center of the large hole diameter L1 of the through hole located in the central area CA may coincide with each other. The center of the small hole diameter S2 of the through hole located in the first outer area EA1 and the center of the large hole diameter L2 may coincide with each other. In addition, the center of the small hole diameter S3 and the center of the large hole diameter L3 of the through hole located in the second outer area EA2 may coincide with each other.

In addition, the separation distance between two adjacent ribs LB positioned in the central area CA may correspond to the separation distance between two adjacent ribs LB positioned in the outer area EA. Here, the separation distance may mean a distance measured from one direction between the end of the large diameter of the first lip (LB) adjacent to each other and the end of the large diameter of the second lip (LB) is formed.

An area of the island part located in the central area CA may correspond to an area of the island part located in the outer area EA. Here, the island portion may mean one surface of the deposition mask positioned between adjacent through holes. For example, the island portion may refer to any one surface of an unetched deposition mask located between any adjacent first and second through holes.

On the other hand, the diameter of the island portion located in the central area CA may correspond to the diameter of the island portion located in the outer area EA. Here, the diameter of the island portion may mean the maximum diameter of the non-etching surface of any one island portion surrounded by different through holes.

In the deposition mask according to the comparative example, the height of the lip LB located in the center area CA may correspond to the height of the lip LB located in the outer area EA.

The face hole height SH1 of the lip LB located in the central area CA may correspond to the face hole height SH2 of the lip LB located in the first outer area EA1. The face hole height SH1 of the lip LB located in the central area CA may correspond to the face hole height SH3 of the lip LB located in the second outer area EA2. In addition, the face hole height SH2 of the lip LB located in the first outer region EA1 may correspond to the face hole height SH3 of the lip LB located in the second outer region EA2. In this case, the small hole height means the distance from the connection portion in which the inner hole is located to the first surface, the distance can be measured in a direction perpendicular to the first surface.

The facing hole height LH1 of the lip LB located in the central area CA may correspond to the facing hole height LH2 of the lip LB located in the first outer area EA1. The facing hole height LH1 of the lip LB located in the central area CA may correspond to the facing hole height LH3 of the lip LB located in the second outer area EA2. In addition, the facing hole height LH2 of the lip LB positioned in the first outer region EA1 may correspond to the facing hole height LH3 of the lip LB located in the second outer region EA2. At this time, the facing hole height means the distance from the connecting portion where the inner hole is located to the second surface, the distance can be measured in a direction perpendicular to the second surface.

In the deposition mask according to the comparative example, the pore angle of the lip LB located in the center area CA may correspond to the pore angle of the lip LB located in the outer area EA.

That is, the deposition mask according to the comparative example can be seen that the height of the pore diameter and the size of the lip is constant.

Accordingly, the through-holes located at the outer side away from the organic material source have a problem of lowering the deposition efficiency (see dotted arrow in FIG. 7A). As the deposition area is increased from 4.5G to 6G, the deposition efficiency of the outer region is lower than that of the central region of the deposition mask.

The pore formed in the central region can be deposited at the correct location on the substrate because it lies at an angle close to the organic material source. On the other hand, since the pore formed in the outer region is placed at an acute angle or an obtuse angle away from the right angle with the organic material source toward the outermost, it may be difficult to be deposited in the correct position on the substrate under the interference of the lip and the island.

Although a method of lowering the thickness of the mask may be considered in order to increase the deposition efficiency, reducing the thickness is limited, so a new attempt is required.

Next, various deposition masks according to the embodiment will be described with reference to FIGS. 8 to 10.

The deposition mask according to the embodiment may include a portion having a shape different from that of the through hole disposed in the central area CA. This is to increase the deposition efficiency of the through-hole located in the outer distant from the organic material source (source).

Referring to Fig. 8, a deposition mask according to the first embodiment will be described.

Referring to FIG. 8A, the deposition mask according to the first embodiment may include a portion having a shape different from that of the through hole disposed in the central area CA and the through hole disposed in the outer area EA.

In the deposition mask according to the first embodiment, the through-holes in the center area CA and the sizes of the inner diameters, small pore diameters, and large pore diameters of the through holes in the outer area EA may correspond to each other.

The inner pore diameter I1 of the through hole located in the central area CA may have a size corresponding to the inner pore diameter I2 of the through hole located in the first outer area EA1. The inner pore diameter I1 of the through hole located in the central area CA may have a size corresponding to the inner pore diameter I3 of the through hole located in the second outer area EA2. In addition, the inner pore diameter I2 of the through hole disposed in the first outer region EA1 may have a size corresponding to the inner pore diameter I3 of the through hole disposed in the second outer region EA2.

The small pore diameter S1 of the through hole located in the central area CA may have a size corresponding to the small pore diameter S2 of the through hole located in the first outer area EA1. The small pore diameter S1 of the through hole located in the central area CA may have a size corresponding to the small pore diameter S3 of the through hole located in the second outer area EA2. In addition, the small hole diameter S2 of the through hole located in the first outer area EA1 may have a size corresponding to the small hole diameter S3 of the through hole located in the second outer area EA2.

The large diameter L1 of the through hole located in the central area CA may have a size corresponding to the large diameter L2 of the through hole located in the first outer area EA1. The large diameter L1 of the through hole disposed in the central area CA may have a size corresponding to the large diameter L3 of the through hole located in the second outer area EA2. In addition, the large diameter L2 of the through hole located in the first outer area EA1 may have a size corresponding to the large diameter L3 of the through hole located in the second outer area EA2.

Referring to FIG. 8B, the center of the small pore diameter S1 and the center of the large pore diameter L1 positioned in the central area CA may be aligned. Meanwhile, the center of the small pore diameter S1 and the center of the large pore diameter L1 located in the outer area EA may include a misaligned region. Here, the center of the small diameter (S1) and the center of the large diameter (L1) is misaligned in the outer region (EA), the center of the small diameter (S1) located in a portion of the outer region (EA) It may mean that the center of the large diameter L1 includes a misaligned region.

That is, the center of the small hole diameter S1 and the center of the large hole diameter L1 of the through hole located in the central area CA may coincide with each other. In detail, the center of the small hole diameter (S1) and the center of the large hole diameter (L1) of the through hole located in the central area (CA) is located above and below, the center of the small hole diameter (S1) and the center of the large hole diameter (L1) The passing virtual line may be perpendicular to one surface of the deposition mask.

Meanwhile, the center of the small hole diameter S2 and the center of the large hole diameter L2 of the through hole located in the first outer area EA1 may be different from each other. In detail, the virtual line passing through the center of the small hole diameter S2 and the center of the large hole diameter L2 of the through hole disposed in the first outer area EA1 may be inclined with one surface of the deposition mask. For example, the imaginary line passing through the center of the small hole diameter S2 and the center of the large hole diameter L2 of the through hole located in the first outer area EA1 is an organic deposition material as the first outer area EA1. It may be the same as or similar to the direction from which the radiation is made to the radiation angle.

In addition, the center of the small hole diameter S3 and the center of the large hole diameter L3 of the through hole located in the second outer area EA2 may be different from each other. In detail, an imaginary line passing through the center of the small hole diameter S3 and the center of the large hole diameter L3 of the through hole disposed in the second outer area EA2 may be inclined with one surface of the deposition mask. For example, an imaginary line passing through the center of the small hole diameter S3 and the center of the large hole diameter L3 of the through hole located in the second outer area EA2 is an organic deposition material as the second outer area EA2. It may be the same as or similar to the direction from which the radiation is made to the radiation angle.

The plurality of through holes located in the outer area EA may include an increase in the separation distance between the center of the large diameter and the center of the small diameter as the distance from the central region CA increases. Here, the separation distance between the center of the large diameter and the center of the small diameter may refer to the separation distance when observed in the plane.

In addition, the separation distance between two adjacent ribs LB disposed in the central area CA may include a portion different from the separation distance between two adjacent ribs LB positioned in the outer area EA. Here, the separation distance may mean a distance measured from one direction between the end of the large diameter of the first lip (LB) adjacent to each other and the end of the large diameter of the second lip (LB) is formed.

An area of the island part located in the central area CA may correspond to an area of the island part located in the outer area EA. Here, the island portion may mean one surface of the deposition mask positioned between adjacent through holes. For example, the island portion may refer to any one surface of an unetched deposition mask located between any adjacent first and second through holes.

On the other hand, the diameter of the island portion located in the central area CA may correspond to the diameter of the island portion located in the outer area EA.

The deposition mask according to the first embodiment may include a region where a height of the lip LB located in the center area CA and a height of the lip LB located in the outer area EA correspond to each other.

The face hole height SH1 of the lip LB located in the central area CA may include an area corresponding to the face hole height SH2 of the lip LB located in the first outer area EA1. The face hole height SH1 of the lip LB located in the central area CA may correspond to the face hole height SH3 of the lip LB located in the second outer area EA2. In addition, the face hole height SH2 of the lip LB positioned in the first outer region EA1 may include an area corresponding to the face hole height SH3 of the lip LB located in the second outer region EA2. Can be. In this case, the small hole height means the distance from the connection portion in which the inner hole is located to the first surface, the distance can be measured in a direction perpendicular to the first surface.

The facing hole height LH1 of the lip LB located in the central area CA may include a region corresponding to the facing hole height LH2 of the lip LB located in the first outer area EA1. The facing hole height LH1 of the lip LB located in the central area CA may include an area corresponding to the facing hole height LH3 of the lip LB located in the second outer area EA2. In addition, the facing hole height LH2 of the lip LB positioned in the first outer region EA1 may correspond to the facing hole height LH3 of the lip LB located in the second outer region EA2. At this time, the facing hole height means the distance from the connecting portion where the inner hole is located to the second surface, the distance can be measured in a direction perpendicular to the second surface.

Meanwhile, the deposition mask according to the first embodiment may include a region in which the pore angle of the lip LB located in the center area CA and the lip LB located in the outer area EA are different from each other. have.

That is, the deposition mask according to the first embodiment may adjust the angle of the pore diameter to facilitate the deposition of the organic material based on the source of the organic material through the misalignment of the small pore diameter and the large pore diameter.

The central area CA may be deposited through the alignment of the center of the large pore diameter and the center of the small pore diameter. On the other hand, the plurality of through-holes in the outer area (EA) toward the both ends of the outer area (EA) relative to the central area (CA) as the distance from the central area (CA) is far larger You can gradually move the position of. At this time, the direction of the large pore diameter shifted (shifted) based on the small pore size of one through hole from the central area CA toward the end of the first outer area EA1 is from the central area CA. As the second outer area EA2 is directed toward the end, the second outer area EA2 may be opposite to the direction of the large pore diameter shifted (shifted) based on the small pore diameter of each one of the through holes. Here, the opposite may mean a direction in which 180 degrees of right and left directions are placed on each other. That is, in the embodiment, the pore size may be formed by adjusting the angle of the pore so as to easily deposit the organic material. Accordingly, the through hole located in the outermost part (end) of the outer area EA may have excellent deposition efficiency.

9, a deposition mask according to the second embodiment will be described.

Referring to FIG. 9A, the deposition mask according to the second embodiment may include portions having different shapes of the through-holes located in the central area CA and the through-holes located in the outer area EA.

In the deposition mask according to the second embodiment, the through-holes in the central area CA and the sizes of the inner and small pore diameters of the through-holes in the outer area EA may correspond to each other.

The inner pore diameter I1 of the through hole located in the central area CA may have a size corresponding to the inner pore diameter I2 of the through hole located in the first outer area EA1. The inner pore diameter I1 of the through hole located in the central area CA may have a size corresponding to the inner pore diameter I3 of the through hole located in the second outer area EA2. In addition, the inner pore diameter I2 of the through hole disposed in the first outer region EA1 may have a size corresponding to the inner pore diameter I3 of the through hole disposed in the second outer region EA2.

The small pore diameter S1 of the through hole located in the central area CA may have a size corresponding to the small pore diameter S2 of the through hole located in the first outer area EA1. The small pore diameter S1 of the through hole located in the central area CA may have a size corresponding to the small pore diameter S3 of the through hole located in the second outer area EA2. In addition, the small hole diameter S2 of the through hole located in the first outer area EA1 may have a size corresponding to the small hole diameter S3 of the through hole located in the second outer area EA2.

Meanwhile, the deposition mask according to the second embodiment may include a region in which the large diameter of the central area CA and the large diameter of the large diameter located in the outer area EA are different from each other.

The large diameter L1 of the through hole located in the central area CA may have a smaller size than the large diameter L2 of the through hole located in the first outer area EA1. The large diameter L1 of the through hole disposed in the central area CA may have a smaller size than the large diameter L3 of the through hole located in the second outer area EA2.

The plurality of through-holes in the outer area EA have a larger diameter as the distance from the central area CA toward both ends of the outer area EA toward the ends of the outer area EA. May include an area that gradually increases. In detail, the large diameter of each of the through holes may gradually increase from the central area CA toward the end of the first outer area EA1. Each of the through-holes may have an area that gradually increases from the central area CA toward the end of the second outer area EA2.

On the other hand, the large diameter L2 of the through hole located in the first outer area EA1 has a size corresponding to each other or has a different size from the large diameter L3 of the through hole located in the second outer area EA2. The branch may include an area. The plurality of through holes located in the first outer region EA1 and / or the second outer region EA2 have a large pore size depending on a distance from the central region CA, and thus, an organic material. The large diameter of the outer region that can be placed close to the source may be the same size as the large diameter of the central region. On the other hand, the large diameter located in the outermost (end) of the outer region far from the organic material source may include a region larger in size than the large diameter of the central region. Accordingly, it is possible to prevent a decrease in deposition efficiency due to covering the organic material supplied with the lip (LB).

9B, the center of the small pore diameter S1 and the center of the large pore diameter L1 are aligned with each other, and the center of the small pore diameter S1 located in the outer region EA is aligned with the center of the small pore diameter S1. The center of the large diameter L1 may be aligned.

That is, the center of the small hole diameter S1 and the center of the large hole diameter L1 of the through hole located in the central area CA may coincide with each other. The center of the small hole diameter S2 of the through hole located in the first outer area EA1 and the center of the large hole diameter L2 may coincide with each other. In addition, the center of the small hole diameter S3 and the center of the large hole diameter L3 of the through hole located in the second outer area EA2 may coincide with each other.

In addition, the separation distance between two adjacent ribs LB positioned in the central area CA may correspond to the separation distance between two adjacent ribs LB positioned in the outer area EA. Here, the separation distance may mean a distance measured from one direction between the end of the large diameter of the first lip (LB) adjacent to each other and the end of the large diameter of the second lip (LB) is formed.

An area of the island part located in the central area CA may be different from an area of the island part located in the outer area EA. An area of the island part located in the central area CA may be larger than an area of the island part located in the outer area EA. That is, since each of the through-holes located in the outer region EA is larger than the large diameter located in the central region as the larger the larger the distance from the central region CA, the area of the island portion located in the outer region EA. May be smaller than the area of the island portion located in the central area CA. For example, an island may mean a second side of an unetched deposition mask located between any adjacent first through hole and second through hole.

On the other hand, the diameter of the island located in the central area CA may include a region different from the diameter of the island located in the outer area EA. The island diameter of the outer area EA may include an area smaller than the island diameter of the central area CA. Here, the diameter of the island may refer to the maximum diameter of the non-etching surface of any one island portion surrounded by different through holes.

The deposition mask according to the second embodiment may include a region where the height of the lip LB located in the center area CA and the height of the lip LB located in the outer area EA are different from each other.

The face hole height SH1 of the lip LB located in the central area CA may include an area corresponding to the face hole height SH2 of the lip LB located in the first outer area EA1. The face hole height SH1 of the lip LB located in the central area CA may correspond to the face hole height SH3 of the lip LB located in the second outer area EA2. In addition, the face hole height SH2 of the lip LB positioned in the first outer region EA1 may include an area corresponding to the face hole height SH3 of the lip LB located in the second outer region EA2. Can be. In this case, the small hole height means the distance from the connection portion in which the inner hole is located to the first surface, the distance can be measured in a direction perpendicular to the first surface.

The facing hole height LH1 of the lip LB located in the central area CA may include a region different from the facing hole height LH2 of the lip LB located in the first outer area EA1. The facing hole height LH1 of the lip LB located in the central area CA may include an area larger than the facing hole height LH2 of the lip LB located in the first outer area EA1.

The facing hole height LH1 of the lip LB located in the central area CA may include a region different from the facing hole height LH3 of the lip LB located in the second outer area EA2. The facing hole height LH1 of the lip LB located in the central area CA may include an area larger than the facing hole height LH3 of the lip LB located in the second outer area EA2.

In addition, the facing hole height LH2 of the lip LB positioned in the first outer region EA1 corresponds to or is different from the facing hole height LH3 of the lip LB located in the second outer region EA1. It may include. The plurality of through holes located in the first outer region EA1 and / or the second outer region EA2 have a large pore diameter depending on a distance from the central region CA, and thus, an organic material. The large diameter of the outer region, which can be placed close to the source, can be flush with the large diameter of the central region. On the other hand, the large diameter located at the outermost (end) of the outer region far from the organic material source may be lower than the large diameter of the central region. Accordingly, it is possible to prevent a decrease in deposition efficiency due to covering the organic material supplied with the lip (LB).

That is, the deposition mask of the second embodiment may include an area that gradually decreases as the thickness of the lip LB located in the outer area CA increases away from the center area. The deposition mask according to the second embodiment may increase the deposition efficiency by lowering the height of the rib LB away from the central area CA.

Referring to FIG. 10, a deposition mask according to a third embodiment will be described.

Referring to FIG. 10A, the deposition mask according to the third embodiment may include a portion having a shape different from that of the through hole disposed in the central area CA and the through hole disposed in the outer area EA.

In the deposition mask according to the third embodiment, the size of the inner and small pore diameters of the through hole in the center area CA and the through hole in the outer area EA may correspond.

The inner pore diameter I1 of the through hole located in the central area CA may have a size corresponding to the inner pore diameter I2 of the through hole located in the first outer area EA1. The inner pore diameter I1 of the through hole located in the central area CA may have a size corresponding to the inner pore diameter I3 of the through hole located in the second outer area EA2. In addition, the inner pore diameter I2 of the through hole disposed in the first outer region EA1 may have a size corresponding to the inner pore diameter I3 of the through hole disposed in the second outer region EA2.

The small pore diameter S1 of the through hole located in the central area CA may have a size corresponding to the small pore diameter S2 of the through hole located in the first outer area EA1. The small pore diameter S1 of the through hole located in the central area CA may have a size corresponding to the small pore diameter S3 of the through hole located in the second outer area EA2. In addition, the small hole diameter S2 of the through hole located in the first outer area EA1 may have a size corresponding to the small hole diameter S3 of the through hole located in the second outer area EA2.

Meanwhile, the deposition mask according to the third embodiment may include regions in which the large diameter of the central area CA and the large diameter of the large area located in the outer area EA are different from each other.

The large diameter L1 of the through hole located in the central area CA may have a smaller size than the large diameter L2 of the through hole located in the first outer area EA1. The large diameter L1 of the through hole disposed in the central area CA may have a smaller size than the large diameter L3 of the through hole located in the second outer area EA2.

The plurality of through-holes in the outer area EA have a larger diameter as the distance from the central area CA toward both ends of the outer area EA toward the ends of the outer area EA. May include an area that gradually increases. In detail, the large diameter of each of the through holes may gradually increase from the central area CA toward the end of the first outer area EA1. Each of the through-holes may have an area that gradually increases from the central area CA toward the end of the second outer area EA2.

On the other hand, the large diameter L2 of the through hole located in the first outer area EA1 has a size corresponding to each other or has a different size from the large diameter L3 of the through hole located in the second outer area EA2. The branch may include an area. The plurality of through holes located in the first outer region EA1 and / or the second outer region EA2 have a large pore size depending on a distance from the central region CA, and thus, an organic material. The large diameter of the outer region that can be placed close to the source may be the same size as the large diameter of the central region. On the other hand, the large diameter located in the outermost (end) of the outer region far from the organic material source may include a region larger in size than the large diameter of the central region. Accordingly, it is possible to prevent a decrease in deposition efficiency due to covering the organic material supplied with the lip (LB).

Referring to FIG. 10B, the center of the small pore diameter S1 and the center of the large pore diameter L1 located in the central area CA may be aligned. Meanwhile, the center of the small pore diameter S1 and the center of the large pore diameter L1 located in the outer area EA may include a misaligned region. Here, the center of the small diameter (S1) and the center of the large diameter (L1) is misaligned in the outer region (EA), the center of the small diameter (S1) located in a portion of the outer region (EA) It may mean that the center of the large diameter L1 includes a misaligned region.

That is, the center of the small hole diameter S1 and the center of the large hole diameter L1 of the through hole located in the central area CA may coincide with each other. In detail, the center of the small hole diameter (S1) and the center of the large hole diameter (L1) of the through hole located in the central area (CA) is located above and below, the center of the small hole diameter (S1) and the center of the large hole diameter (L1) The passing virtual line may be perpendicular to one surface of the deposition mask.

Meanwhile, the center of the small hole diameter S2 and the center of the large hole diameter L2 of the through hole located in the first outer area EA1 may be different from each other. In detail, the virtual line passing through the center of the small hole diameter S2 and the center of the large hole diameter L2 of the through hole disposed in the first outer area EA1 may be inclined with one surface of the deposition mask. For example, the imaginary line passing through the center of the small hole diameter S2 and the center of the large hole diameter L2 of the through hole located in the first outer area EA1 is an organic deposition material as the first outer area EA1. It may be the same as or similar to the direction from which the radiation is made to the radiation angle.

In addition, the center of the small hole diameter S3 and the center of the large hole diameter L3 of the through hole located in the second outer area EA2 may be different from each other. In detail, an imaginary line passing through the center of the small hole diameter S3 and the center of the large hole diameter L3 of the through hole disposed in the second outer area EA2 may be inclined with one surface of the deposition mask. For example, an imaginary line passing through the center of the small hole diameter S3 and the center of the large hole diameter L3 of the through hole located in the second outer area EA2 is an organic deposition material as the second outer area EA2. It may be the same as or similar to the direction from which the radiation is made to the radiation angle.

The plurality of through holes located in the outer area EA may include an increase in the separation distance between the center of the large diameter and the center of the small diameter as the distance from the central region CA increases. Here, the separation distance between the center of the large diameter and the center of the small diameter may refer to the separation distance when observed in the plane.

In addition, the separation distance between two adjacent ribs LB disposed in the central area CA may include a portion different from the separation distance between two adjacent ribs LB positioned in the outer area EA. Here, the separation distance may mean a distance measured from one direction between the end of the large diameter of the first lip (LB) adjacent to each other and the end of the large diameter of the second lip (LB) is formed.

An area of the island part located in the central area CA may be different from an area of the island part located in the outer area EA. An area of the island part located in the central area CA may be larger than an area of the island part located in the outer area EA. That is, since each of the through-holes located in the outer region EA is larger than the large diameter located in the central region as the larger the larger the distance from the central region CA, the area of the island portion located in the outer region EA. May be smaller than the area of the island portion located in the central area CA. For example, an island may mean a second side of an unetched deposition mask located between any adjacent first through hole and second through hole.

On the other hand, the diameter of the island located in the central area CA may include a region different from the diameter of the island located in the outer area EA. The island diameter of the outer area EA may include an area smaller than the island diameter of the central area CA. Here, the diameter of the island may refer to the maximum diameter of the non-etching surface of any one island portion surrounded by different through holes.

The deposition mask according to the third embodiment may include a region where the height of the lip LB located in the center area CA and the height of the lip LB located in the outer area EA are different from each other.

The face hole height SH1 of the lip LB located in the central area CA may include an area corresponding to the face hole height SH2 of the lip LB located in the first outer area EA1. The face hole height SH1 of the lip LB located in the central area CA may include a region corresponding to the face hole height SH3 of the lip LB located in the second outer area EA2. In addition, the face hole height SH2 of the lip LB positioned in the first outer region EA1 may include an area corresponding to the face hole height SH3 of the lip LB located in the second outer region EA2. Can be. In this case, the small hole height means the distance from the connection portion in which the inner hole is located to the first surface, the distance can be measured in a direction perpendicular to the first surface.

The facing hole height LH1 of the lip LB located in the central area CA may include a region different from the facing hole height LH2 of the lip LB located in the first outer area EA1. The facing hole height LH1 of the lip LB located in the central area CA may include an area larger than the facing hole height LH2 of the lip LB located in the first outer area EA1.

The facing hole height LH1 of the lip LB located in the central area CA may include a region different from the facing hole height LH3 of the lip LB located in the second outer area EA2. The facing hole height LH1 of the lip LB located in the central area CA may include an area larger than the facing hole height LH3 of the lip LB located in the second outer area EA2.

In addition, the facing hole height LH2 of the lip LB positioned in the first outer region EA1 corresponds to or is different from the facing hole height LH3 of the lip LB located in the second outer region EA1. It may include. The plurality of through holes located in the first outer region EA1 and / or the second outer region EA2 have a large pore diameter depending on a distance from the central region CA, and thus, an organic material. The large diameter of the outer region, which can be placed close to the source, can be flush with the large diameter of the central region. On the other hand, the large diameter located at the outermost (end) of the outer region far from the organic material source may be lower than the large diameter of the central region. Accordingly, it is possible to prevent a decrease in deposition efficiency due to covering the organic material supplied with the lip (LB).

That is, the deposition mask of the third embodiment may include a region that gradually decreases as the thickness of the lip LB located in the outer region CA moves away from the central region. The deposition mask according to the second embodiment may increase the deposition efficiency by lowering the height of the rib LB away from the central area CA.

In addition, the deposition mask according to the third embodiment may include a region in which the pore angle of the lip LB positioned in the center area CA and the lip angle LB of the outer area EA are different from each other. have.

That is, the deposition mask according to the third embodiment may adjust the angle of the pore diameter to facilitate the deposition of the organic material based on the organic material source through the misalignment of the small pore diameter and the large pore diameter.

The central area CA may be deposited through the alignment of the center of the large pore diameter and the center of the small pore diameter. On the other hand, the plurality of through holes located in the outer area EA may gradually move the position of the large diameter as the distance from the central area CA toward the both ends with respect to the center area CA. have. At this time, the direction of the large pore diameter shifted (shifted) based on the small pore size of one through hole from the central area CA toward the end of the first outer area EA1 is from the central area CA. As the second outer area EA2 is directed toward the end, the second outer area EA2 may be opposite to the direction of the large pore diameter shifted (shifted) based on the small pore diameter of each one of the through holes. Here, the opposite may mean a direction in which 180 degrees of right and left directions are placed on each other. That is, in the embodiment, the pore size may be formed by adjusting the angle of the pore so as to easily deposit the organic material. Accordingly, the through hole located in the outermost part (end) of the outer area EA may have excellent deposition efficiency.

That is, the third embodiment may increase the deposition efficiency through adjusting the pore angle and adjusting the height of the lip.

With reference to FIG. 11, the relative position of the small hole and the facing hole of the deposition mask which concerns on a 1st Example or 3rd Example is demonstrated.

Referring to FIG. 11A, the point where the x-axis and the y-axis intersect is the central area CA. It can be seen that the small holes S1 and the large holes L1 located in the central area CA are aligned with their centers. Meanwhile, the facing hole L2 may include an area that is misaligned with the face hole S2 toward the -x axis direction from the central area CA. The facing hole L3 may include an area misaligned with the face hole S2 toward the + x axis direction from the central area CA. The misalignment direction of the facing hole L2 located in the -x axis direction may be opposite to the misalignment direction of the facing hole L3 located in the + x axis direction. At this time, the small hole (S2) and the facing hole (L2) located in the -x axis direction may be a surface hole located in the first outer area (EA1). The small hole S3 and the facing hole L3 located in the + x axis direction may be the surface hole located in the second outer area EA2.

Meanwhile, the facing hole L4 may include an area that is misaligned with the face hole S4 toward the + y axis direction from the central area CA. The facing hole L5 may include an area that is misaligned with the face hole S5 toward the -y axis direction from the central area CA. The misalignment direction of the facing hole L4 located in the + y axis direction may be opposite to the misalignment direction of the facing hole L5 located in the −y axis direction.

Referring to FIG. 11B, the misalignment according to the distance with respect to the center area of the deposition mask will be described.

In the present specification, the change in size or height gradually depends on the distance from the center region, means a change in size between through holes relatively close to the center region and through holes relatively far from the center region in different through holes. It may be.

For example, the outer region includes a first through hole having a first separation distance from the central area, a second through hole having a second separation distance from the central area, and a third through hole having a third separation distance from the central area. When the first separation distance <the second separation distance <the third separation distance in the order, the gradual change is larger than the first through hole, the misalignment of the second through hole is larger than the second through hole, It can mean that the misalignment is large. Alternatively, the gradual change is that the height of the lip LB adjacent to the second through hole is smaller than the height of the lip LB adjacent to the first through hole and the third penetration is greater than the height of the lip LB adjacent to the second through hole. The height of the lip LB adjacent to the hole may be small. The embodiment is not limited thereto and may mean that a difference occurs near and far from the central region in one through hole.

With reference to FIG. 11C, the misalignment evaluation method is demonstrated.

을 넘지 못한다. 미스얼라인이 이를 넘을 경우, 대공경의 오버 쉬프트에 의해서 핀홀이 형성되기 때문이다. 이때, DΨ는 대면공의 크기이고, dΨ는 소면공의 크기이다. Miss alignment

Do not exceed If the misalignment exceeds this, the pinhole is formed by the overshift of the large diameter. Where DΨ is the size of the facing hole and dΨ is the size of the facing hole.

Referring to Fig. 12, the deposition mask according to the first embodiment will be described in more detail.

In the deposition mask according to the first embodiment, the center of the small pore diameter and the center of the large pore diameter may be aligned at a portion of the outer region. In one portion of the outer region, the center of the small pore diameter and the center of the large pore diameter may include a misaligned region.

Referring to FIG. 12A, the center of the small pore diameter S1 and the center of the large pore diameter L1 positioned in the central area CA may be aligned. In the first outer area EA1, the center of the small hole diameter S2a and the center of the large hole diameter L2a may be aligned with each other in the first through hole of the portion adjacent to the central area CA. In the second outer area EA2, the first through hole of the portion adjacent to the center area CA may be aligned with the center of the small hole diameter S3a and the center of the large hole diameter L3a. That is, at least a part of the outer region may include a center of the large pore diameter and a center of the small pore diameter coincide up and down. As the distance from the organic material source in the outer region is located close, the through hole of the position where the deposition efficiency is high may be aligned with the center of the small diameter and the large diameter.

As the distance from the central area CA is increased in the first outer area EA1, the center of the large diameter may be misaligned based on the center of the small diameter. In the first outer area EA1, the second through-hole farther from the center area CA than the first through-hole is misaligned with the center of the large pore L2b based on the center of the small pore S2b. It can include an area. In the first outer area EA1, the third through hole farther from the center area CA than the second through hole has a misalignment at the center of the large hole L2c based on the center of the small hole S2c. Can be bigger

As the distance from the central area CA is increased in the second outer area EA2, the center of the large diameter may be misaligned based on the center of the small diameter. In the second outer region EA2, the second through-hole farther from the central region CA than the first through-hole is misaligned with respect to the center of the large pore diameter L3b based on the center of the small pore diameter S3b. It can include an area. The third through hole farther from the center area CA than the second through hole in the second outer area EA2 has a misalignment at the center of the large hole L3c with respect to the center of the small hole S3c. Can be bigger

According to the first embodiment, the plurality of through holes located in the first outer region is located closer to the center region than the center of the small diameter as the distance from the central region is greater, and the plurality of through holes located in the second outer region. The hole may include a center of the large diameter closer to the center region than a center of the small diameter as the distance from the central region.

For example, based on 500 mm of effective area 500 mm, the outer area EA including the misaligned area is 1/2 of the first outer area EA1 located in the -x axis direction, and the + x axis It may be a half area of the second outer area EA2 located in the direction. However, the embodiment is not limited thereto, and the range of the outer region may vary according to the size and resolution of the deposition mask.

Referring to FIG. 12B, as the region located at the end of the outer region includes a misaligned region, it can be seen that the deposition pattern is uniformly formed in all through holes of the deposition mask.

Referring to FIG. 13, the deposition mask according to the second embodiment will be described in more detail.

In the deposition mask according to the second embodiment, the size of the large pore diameter and the height of the lip may be changed in a portion of the outer region.

Referring to FIG. 13A, the size of the small pore diameter S1 and the large pore diameter L1 located in the central region CA may include a first through hole in a portion adjacent to the central region CA in the first outer region EA1. These branches may correspond to the sizes of the small pore diameter S2a and the large pore diameter L2a, respectively. The small pore diameter S1 and the large pore diameter L1 located in the central region CA have a small pore diameter S3a of the first through hole of the portion adjacent to the central region CA in the second outer region EA2. ) And a large pore diameter (L3a) may correspond respectively. That is, at least a portion of the outer region may include a region in which the size of the large diameter corresponds to the size of the central region. As the distance from the organic material source is located near the outer region, the large pore size at the position where the deposition efficiency is high may be arranged to be the same size as the central region.

As the distance from the central area CA to the first outer area EA1 increases, the size of the large diameter may increase. The large diameter L2b of the second through hole distant from the central area CA may be larger than the large diameter L2a of the first through hole in the first outer area EA1. In the first outer area EA1, the size of the large through hole L2c of the third through hole far from the central area CA may be larger than the large through hole L2b of the second through hole.

As the distance from the center area CA to the second outer area EA2 increases, the size of the large diameter may increase. In the second outer region EA2, the larger diameter L3b of the second through hole farther from the central area CA than the large diameter L3a of the first through hole may be larger. The large diameter L3c of the third through hole distant from the central area CA may be larger than the large diameter L3b of the second through hole in the first outer area EA1.

For example, with respect to the effective area 500mm of 4.5G, the outer area EA in which the large-diameter size and the lip size change appear is 1/2 of the first outer area EA1 located at the end in the -x axis direction. The area may be 1/2 of the second outer area EA2 positioned at the end of the + x-axis direction. However, the embodiment is not limited thereto, and the range of the outer region may vary according to the size and resolution of the deposition mask.

Referring to FIG. 13B, in the deposition mask according to the second embodiment, a large pore size increases as the plurality of through-holes of the regions located at the ends of the first and second outer regions move away from the central region, and the lip ( It can be seen that as the height of LB) is lowered, the deposition efficiency is improved.

The difference TG between the thickness of the rib LB located in the center area CA and the thickness LB located in the outer area EA is determined by the thickness of the base substrate of the deposition mask- (thickness of the base substrate * 2/3). May be). Here, the thickness of the lip LB located in the outer area EA may be measured at one area having the lowest thickness at the outermost part of the outer area EA.

For example, in the case of using a base substrate made of an Invar material having a thickness of 30 μm, the difference between the thickness of the rib LB located in the center area CA and the thickness of the rib LB located in the outer area EA is TG. May include a range of about 10 μm. For example, the difference TG of the thickness of the lip LB located in the central area CA and the thickness of the lip LB located in the outer area EA may be 8 μm to 12 μm. For example, the difference TG of the thickness of the lip LB located in the central area CA and the thickness of the lip LB located in the outer area EA may be 9 μm to 11 μm.

The difference TG between the thickness of the lip LB located in the central area CA and the thickness of the lip LB located in the outer area EA may be set such that the size of the island is 5 µm or more in diameter. If the diameter of the island is less than 5㎛ may cause a problem that the size of the pore size increases compared to the design due to the loss of the island.

FIG. 13C is a photograph of an island of a central region of a deposition mask according to a second embodiment. FIG. Referring to FIG. 13C, it was confirmed that the diameter of the island ID1 of the central region in the deposition mask according to the second embodiment is about 10 μm.

13D is a photograph of an island of a first outer region of the deposition mask according to the second embodiment. Referring to FIG. 13D, the diameter of the island ID2 of the first outer region of the deposition mask according to the second embodiment is about 5 μm.

13E is a photograph of an island of a second outer region of the deposition mask according to the second embodiment. Referring to FIG. 13E, the diameter of the island ID3 of the second outer region of the deposition mask according to the second embodiment is about 5 μm.

Referring to Fig. 14, a deposition mask according to the third embodiment will be described in more detail.

In the deposition mask according to the third embodiment, the center of the small pore diameter and the center of the large pore diameter may be aligned at a portion of the outer region. In one portion of the outer region, the center of the small pore diameter and the center of the large pore diameter may include a misaligned region.

Referring to FIG. 14A, the center of the small pore diameter S1 and the center of the large pore diameter L1 positioned in the central area CA may be aligned. In the first outer area EA1, the center of the small hole diameter S2a and the center of the large hole diameter L2a may be aligned with each other in the first through hole of the portion adjacent to the central area CA. In the second outer area EA2, the first through hole of the portion adjacent to the center area CA may be aligned with the center of the small hole diameter S3a and the center of the large hole diameter L3a. That is, at least a part of the outer region may include a center of the large pore diameter and a center of the small pore diameter coincide up and down. As the distance from the organic material source in the outer region is located close, the through hole of the position where the deposition efficiency is high may be aligned with the center of the small diameter and the large diameter.

As the distance from the central area CA is increased in the first outer area EA1, the center of the large diameter may be misaligned based on the center of the small diameter. In the first outer area EA1, the second through-hole farther from the center area CA than the first through-hole is misaligned with the center of the large pore L2b based on the center of the small pore S2b. It can include an area. In the first outer area EA1, the third through hole farther from the center area CA than the second through hole has a misalignment at the center of the large hole L2c based on the center of the small hole S2c. Can be bigger

As the distance from the central area CA is increased in the second outer area EA2, the center of the large diameter may be misaligned based on the center of the small diameter. In the second outer region EA2, the second through-hole farther from the central region CA than the first through-hole is misaligned with respect to the center of the large pore diameter L3b based on the center of the small pore diameter S3b. It can include an area. The third through hole farther from the center area CA than the second through hole in the second outer area EA2 has a misalignment at the center of the large hole L3c with respect to the center of the small hole S3c. Can be bigger

According to the third embodiment, the plurality of through holes located in the first outer region is located closer to the center region than the center of the small diameter as the distance from the center region is increased, and the plurality of through holes located in the second outer region. The hole may include a center of the large diameter closer to the center region than a center of the small diameter as the distance from the central region.

For example, based on 500 mm of effective area 500 mm, the outer area EA including the misaligned area is 1/2 of the first outer area EA1 located at the end in the -x axis direction. It may be a half area of the second outer area EA2 positioned at the end in the + x axis direction. However, the embodiment is not limited thereto, and the range of the outer region may vary according to the size and resolution of the deposition mask.

In the deposition mask according to the third embodiment, the size of the large diameter and the height of the lip may be changed in a portion of the outer region.

The small pore diameter S1 and the large pore diameter L1 located in the central region CA have a small pore diameter S2a of the first through-hole of a portion adjacent to the central region CA in the first outer region EA1. ) And a large pore diameter (L2a) may correspond respectively. The small pore diameter S1 and the large pore diameter L1 located in the central region CA have a small pore diameter S3a of the first through hole of the portion adjacent to the central region CA in the second outer region EA2. ) And a large pore diameter (L3a) may correspond respectively. That is, at least a portion of the outer region may include a region in which the size of the large diameter corresponds to the size of the central region. As the distance from the organic material source is located near the outer region, the large pore size at the position where the deposition efficiency is high may be arranged to be the same size as the central region.

As the distance from the central area CA to the first outer area EA1 increases, the size of the large diameter may increase. The large diameter L2b of the second through hole distant from the central area CA may be larger than the large diameter L2a of the first through hole in the first outer area EA1. In the first outer area EA1, the size of the large through hole L2c of the third through hole far from the central area CA may be larger than the large through hole L2b of the second through hole.

As the distance from the center area CA to the second outer area EA2 increases, the size of the large diameter may increase. In the second outer region EA2, the larger diameter L3b of the second through hole farther from the central area CA than the large diameter L3a of the first through hole may be larger. The large diameter L3c of the third through hole distant from the central area CA may be larger than the large diameter L3b of the second through hole in the first outer area EA1.

For example, with respect to the effective area 500mm of 4.5G, the outer area EA in which the large-diameter size and the lip size change appear is 1/2 of the first outer area EA1 located at the end in the -x axis direction. The area may be 1/2 of the second outer area EA2 positioned at the end of the + x-axis direction. However, the embodiment is not limited thereto, and the range of the outer region may vary according to the size and resolution of the deposition mask.

Referring to FIG. 14B, as the region located at the end of the outer region includes a misaligned region, it can be seen that the deposition pattern is uniformly formed in all through holes of the deposition mask. In addition, in the deposition mask according to the third embodiment, as the plurality of through holes in the regions located at the ends of the first and second outer regions move away from the central region, the size of the large diameter increases, and the height of the ribs LB is increased. As it becomes lower, it can be seen that the deposition efficiency is improved.

12 to 14 are for explaining the arrangement of the through-holes, the deposition mask according to the embodiment is not limited to the number of through-holes in the figure, of course.

When measuring the horizontal diameter (Cx) and the vertical diameter (Cy) of the reference hole that is any one through-hole, each horizontal between the holes adjacent to the reference hole (6 in the figure shown in total) A deviation between the diameters Cx in the direction and a deviation between the diameters Cy in the vertical direction may be implemented as 2% to 10%. That is, when the size deviation between adjacent holes of one reference hole is 2% to 10%, uniformity of deposition may be secured.

For example, the size deviation between the reference hole and the adjacent holes may be 4% to 9%. For example, the size deviation between the reference hole and the adjacent holes may be 5% to 7%. For example, the size deviation between the reference hole and the adjacent holes may be 2% to 5%.

When the size deviation between the reference hole and the adjacent holes is less than 2%, the moire generation rate may increase in the OLED panel after deposition. When the size deviation between the reference hole and the adjacent holes is more than 10%, the occurrence rate of color spots in the OLED panel after deposition may increase.

The average deviation of the through hole diameter may be ± 5㎛. For example, the average deviation of the through hole diameter may be ± 3㎛. According to the embodiment, as the size deviation between the reference hole and the adjacent holes is implemented within ± 3 μm, deposition efficiency may be improved.

The through holes may be arranged in a line or staggered with each other according to a direction.

For example, the through holes may be arranged in a row on the vertical axis and in a row on the horizontal axis. For example, the through holes may be arranged in a row on the longitudinal axis, and may be alternately arranged on the horizontal axis.

Alternatively, the through holes may be alternately arranged on the vertical axis, and may be arranged in a row on the horizontal axis.

The through hole may have a first diameter Cx measured in the horizontal direction and a second diameter Cy measured in the vertical direction. The through hole may correspond to or different from a third diameter measured in a first diagonal direction between a horizontal direction and a vertical direction, and a fourth diameter measured in a second diagonal direction crossing the first diagonal direction. The through hole may be rounded.

The deposition mask may be formed by etching the base metal plate. The base metal plate may include a metal material. The base metal plate may include a nickel alloy. For example, the base metal plate may be an alloy of nickel and iron. In this case, nickel may be about 35% to about 37% by weight, and the iron may be about 63% to about 65% by weight. For example, the base metal plate 100a may include about 35 wt% to about 37 wt% nickel, about 63 wt% to about 65 wt% iron, and trace amounts of C, Si, S, P, Cr, Mo, Mn, It may include Invar including at least one of Ti, Co, Cu, Fe, Ag, Nb, V, In, and Sb. Here, the trace amount may mean 1 wt% or less. Specifically, the trace amount may mean 0.5 wt% or less. However, the base substrate is not limited thereto, and may include various metal materials.

Nickel alloys such as Invar have the advantage that the lifetime of the deposition mask can be increased because of the small coefficient of thermal expansion. However, nickel alloys such as Invar have a problem that uniform etching is difficult.

That is, in the case of nickel alloys such as Invar, as the etching speed is increased at the initial stage of etching, the through hole may increase in the side surface, and thus, the film may be removed from the photoresist layer. In addition, when the invar is etched, as the size of the through hole increases, it may be difficult to form the through hole of a minute size. In addition, the through-holes are formed nonuniformly, which may lower the yield of the deposition mask.

Accordingly, the embodiment may further arrange a surface layer for surface modification that varies the component, content, crystal structure and corrosion rate on the base metal plate surface. Here, the surface modification may mean a layer made of various materials disposed on the surface to improve the etching factor.

The thickness of the deposition mask may be 5 μm to 50 μm. For example, the thickness of the deposition mask 100 may be 5㎛ to 30㎛. For example, the thickness of the deposition mask 100 may be 5um to 25um. When the thickness of the metal plate 100 is less than 5㎛ manufacturing efficiency may be low.

When the thickness of the metal plate 100 is greater than 50 μm, process efficiency for forming the through hole may be reduced.

Features, structures, effects, and the like described in the above embodiments are included in at least one embodiment of the present invention, and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects, and the like illustrated in the embodiments may be combined or modified with respect to other embodiments by those skilled in the art to which the embodiments belong. Therefore, it should be interpreted that the contents related to such a combination and modification are included in the scope of the present invention.

In addition, the above description has been made with reference to the embodiments, which are merely examples and are not intended to limit the present invention, and those skilled in the art to which the present invention pertains may be illustrated as above without departing from the essential characteristics of the present embodiment. It will be appreciated that various modifications and applications are possible. For example, each component specifically shown in the embodiments may be modified. And differences relating to such modifications and applications will have to be construed as being included in the scope of the invention defined in the appended claims.

Claims (12)

In the deposition mask for an OLED comprising a first side and a second side facing each other,
A deposition pattern region and a non-deposition region including a plurality of through holes formed in communication with the small hole on the first surface and the large hole on the second surface,
The deposition pattern region includes three or more effective regions,
The two outermost valid areas are the outer areas,
The effective area except the outer area is a central area,
The through-hole located in the central region includes a portion different in shape from the through-hole located in the outer region. The method of claim 1,
The central region is aligned with the center of the large pore diameter and the center of the small pore diameter,
The outer region includes a region in which the center of the large pore diameter and the center of the small pore diameter are misaligned. The method of claim 2,
At least a portion of the outer region includes the center of the large pore diameter and the center of the small pore diameter, the deposition mask for OLED. The method of claim 2,
And a plurality of through holes in the outer region, wherein the separation distance between the center of the large diameter and the center of the small diameter increases as the distance from the central region increases. The method of claim 2,
The outer region includes a first outer region located at one end close to the central region and a second outer region located at the other end opposite to the one end of the central region,
And a plurality of through holes located in the second outer region, wherein a center of the large diameter is closer to the center region than the center of the small diameter as the distance from the center region is increased. The method of claim 1,
The size of the small pore diameter of the central region and the outer region comprises corresponding to each other, the deposition mask for OLED. The method of claim 1,
And the outer region includes a region having a different size from the central region and a large pore size. The method of claim 7, wherein
The central region is aligned with the center of the large pore diameter and the center of the small pore diameter,
The outer region includes a region in which the center of the large pore diameter and the center of the small pore diameter are aligned. The method of claim 1,
The thickness of the lip measured in the central region comprises a region larger than the thickness of the lip measured in the outer region, the deposition mask for OLED. The method of claim 1,
The outer region includes a region in which the thickness of the lip decreases away from the central region. The method of claim 1,
And the diameter of the island in the outer region comprises a region smaller than the diameter of the island in the central region. The method of claim 7, wherein
The central region is aligned with the center of the large pore diameter and the center of the small pore diameter,
The outer region includes a region in which the center of the large pore diameter and the center of the small pore diameter are misaligned.

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