KR102639100B1 - Semiconductor device package and display device including the same - Google Patents

Abstract

An embodiment includes a plurality of light emitting units; a wavelength conversion layer disposed on the plurality of light emitting units; a color filter layer disposed on the wavelength conversion layer; and a first intermediate layer disposed between the wavelength conversion layer and the color filter layer, wherein the wavelength conversion layer includes a plurality of wavelength conversion layers respectively disposed on the plurality of light emitting units, and the color filter layer includes the plurality of wavelength conversion layers. A semiconductor device includes a plurality of color filters each disposed on a conversion layer, and the first intermediate layer includes oxide or nitride.

Description

Semiconductor device and display device including the same {SEMICONDUCTOR DEVICE PACKAGE AND DISPLAY DEVICE INCLUDING THE SAME}

The embodiment relates to a semiconductor device and a display device including the same.

Light Emitting Diode (LED) is one of the light emitting devices that emits light when current is applied. Light-emitting diodes can emit high-efficiency light at low voltage, providing excellent energy savings. Recently, the luminance problem of light emitting diodes has been greatly improved, and they are being applied to various devices such as backlight units of liquid crystal displays, electronic signs, indicators, and home appliances.

A typical liquid crystal display device controls the light emitted from a light emitting diode and the transmittance of the liquid crystal to display an image or video using light that passes through a color filter. Recently, there has been a demand for high-definition and large-screen displays of HD or higher, but it is difficult to implement high-definition large-screen displays due to yield and cost for the commonly used liquid crystal displays and organic electric field displays with complex configurations. there is.

An embodiment provides a semiconductor device with improved color purity.

Embodiments provide a semiconductor device with improved luminance.

In an embodiment, chip-level light emitting devices including first to third light emitting units that are individually driven may be provided as pixels of a display device. At this time, the first to third light emitting units function as each subpixel of the pixel, so that a high-resolution, large-sized display device can be implemented.

The problem to be solved in the embodiment is not limited to this, and also includes purposes and effects that can be understood from the means of solving the problem or the embodiment described below.

A semiconductor device according to an embodiment of the present invention includes a plurality of light emitting units; a wavelength conversion layer disposed on the plurality of light emitting units; a color filter layer disposed on the wavelength conversion layer; and a first intermediate layer disposed between the wavelength conversion layer and the color filter layer, wherein the first intermediate layer includes oxide or nitride.

The first intermediate layer may serve to bond the wavelength conversion layer containing a silicone-based resin and the color filter layer containing an acrylic-based resin.

The first intermediate layer may have a light transmittance of 70% or more.

The thickness of the first intermediate layer may be 5 nm to 1,000 nm.

The first intermediate layer is made of indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (IGZO), and indium gallium tin oxide (IGTO). , AZO (aluminum zinc oxide), ATO (antimony tin oxide), GZO (gallium zinc oxide), IZON (IZO Nitride), AGZO (Al-Ga ZnO), IGZO (In-Ga ZnO), ZnO, IrOx, RuOx, It may include at least one of NiO, RuOx/ITO, ZnO, SiO ₂ , SixOy, Si ₃ N ₄ , SixNy, SiOxNy, Al ₂ O ₃ , TiO ₂ , and AlN.

The wavelength conversion layer may include a plurality of wavelength conversion layers respectively disposed on the plurality of light emitting units, and the color filter layer may include a plurality of color filters respectively disposed on the plurality of wavelength conversion layers.

It may include a second intermediate layer disposed between the first intermediate layer and the wavelength conversion layer.

The second intermediate layer may include the same type of resin as the wavelength conversion layer.

The thickness of the second intermediate layer may be 3,000 nm to 20,000 nm.

Each of the light emitting units may include a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer.

a first bump electrode commonly connected to the first conductive semiconductor layer of the plurality of light emitting units; and a plurality of second bump electrodes each electrically connected to the second conductive semiconductor layer of the plurality of light emitting units.

It includes a first electrode electrically connecting the first conductivity type semiconductor layer of the plurality of light emitting units, and the first bump electrode may be electrically connected to the first electrode.

a plurality of first bump electrodes each connected to a first conductive semiconductor layer of the plurality of light emitting units; and a second bump electrode commonly connected to the second conductive semiconductor layer of the plurality of light emitting units.

It includes a second electrode electrically connecting the second conductivity type semiconductor layer of the plurality of light emitting units, and the second bump electrode may be electrically connected to the second electrode.

The semiconductor device of the embodiment may have improved color purity.

The relative brightness of the semiconductor device of the embodiment may be improved.

In the semiconductor device of the embodiment, a chip-level light emitting device including first to third light emitting units that are individually driven may be provided as a pixel of a display device. At this time, the first to third light emitting units function as each subpixel of the pixel, so that a high-resolution, large-sized display device can be implemented.

The various and beneficial advantages and effects of the present invention are not limited to the above-described content, and may be more easily understood through description of specific embodiments of the present invention.

1 is a plan view of a semiconductor device according to a first embodiment of the present invention;
Figure 2 is a cross-sectional view taken along the AA direction of Figure 1;
3 is a cross-sectional view of a semiconductor device according to a second embodiment of the present invention;
4A and 4B are graphs measuring changes in luminous flux and color purity according to the width of the barrier rib of a semiconductor device according to an embodiment;
5 is a cross-sectional view of a semiconductor device according to a third embodiment of the present invention;
Figure 6 is a modified example of Figure 5,
7A to 7F are diagrams showing a method of manufacturing a semiconductor device according to a third embodiment;
8 is a cross-sectional view of a semiconductor device according to a fourth embodiment of the present invention;
9A to 9D are diagrams showing a method of manufacturing a semiconductor device according to a fourth embodiment;
Figure 10 is a cross-sectional view of a modified example of the semiconductor device according to the fourth embodiment shown in Figure 8;
11 is a cross-sectional view of a semiconductor device according to a fifth embodiment of the present invention;
Figure 12 is a cross-sectional view of a semiconductor device according to a sixth embodiment of the present invention;
13 is a cross-sectional view of a semiconductor device according to a seventh embodiment of the present invention;
14 is a top view of a display device according to an embodiment of the present invention;
Figure 15 is a diagram showing a state in which a semiconductor device and a circuit board are electrically connected.

The present embodiments may be modified in other forms or various embodiments may be combined with each other, and the scope of the present invention is not limited to each embodiment described below.

Even if matters described in a specific embodiment are not explained in other embodiments, they may be understood as descriptions related to other embodiments, as long as there is no explanation contrary to or contradictory to the matter in the other embodiments.

For example, if a feature for configuration A is described in a specific embodiment and a feature for configuration B is described in another embodiment, the description is contrary or contradictory even if an embodiment in which configuration A and configuration B are combined is not explicitly described. Unless otherwise stated, it should be understood as falling within the scope of the rights of the present invention.

In the description of the embodiment, when an element is described as being formed “on or under” another element, or under) includes both elements that are in direct contact with each other or one or more other elements that are formed (indirectly) between the two elements. Additionally, when expressed as "on or under," it can include not only the upward direction but also the downward direction based on one element.

Hereinafter, with reference to the attached drawings, embodiments of the present invention will be described in detail so that those skilled in the art can easily implement the present invention.

The semiconductor device may include various electronic devices such as light-emitting devices and light-receiving devices, and both the light-emitting devices and light-receiving devices include first conductive semiconductor layers (110a, 110b, 110c), active layers (120a, 120b, 120c), and second It may include conductive semiconductor layers 130a, 130b, and 130c.

The semiconductor device according to this embodiment may be a light emitting device.

Light-emitting devices emit light when electrons and holes recombine, and the wavelength of this light is determined by the material's inherent energy band gap. Accordingly, the light emitted may vary depending on the composition of the material.

Hereinafter, the semiconductor device of the embodiment will be described in detail with reference to the attached drawings.

Figure 1 is a plan view of a semiconductor device according to a first embodiment of the present invention, and Figure 2 is a cross-sectional view taken along the line A-A of Figure 1.

Referring to FIG. 1, a semiconductor device may include a plurality of light emitting units (P1, P2, and P3). Each of the plurality of light emitting units (P1, P2, and P3) may emit light of the same or different wavelengths. The plurality of light emitting units (P1, P2, and P3) can be defined as areas that can be controlled independently from each other. For example, by selectively applying current among the plurality of light emitting units (P1, P2, and P3), only one of the first to third light emitting units (P1, P2, and P3) can be turned on independently.

The plurality of light emitting units (P1, P2, P3) include a first light emitting unit (P1) that emits light in a first wavelength band, a second light emitting unit (P2) that emits light in a second wavelength band, and a third light emitting unit (P2) that emits light in a second wavelength band. It may include a third light emitting unit (P3) that emits light.

The first light emitting unit (P1) may emit green light, and the second light emitting unit (P2) and the third light emitting unit (P3) may emit blue light, but are not limited thereto. For example, the first light emitting unit (P1) may emit blue light, and the second light emitting unit (P2) and the third light emitting unit (P3) may emit green light. Additionally, the first to third light emitting units P1, P2, and P3 may all emit blue light. The first to third light emitting units (P1, P2, and P3) may emit light of different wavelengths depending on the injected current.

Referring to FIG. 2, the semiconductor device 1A includes a first electrode electrically connecting the first to third light emitting units P1, P2, and P3 and the separated first conductive semiconductor layers 110a, 110b, and 110c. 151, the first bump electrode 150 connected to the first electrode 151, and a plurality of second bump electrodes 160a each electrically connected to the separated second conductive semiconductors 130a, 130b, and 130c. 160b, 160c) may be included.

The first bump electrode 150 and the second bump electrodes 160a, 160b, and 160c of the semiconductor device may be disposed below the plurality of light emitting units P1, P2, and P3. In the drawing, the first bump electrode 150 and the second bump electrodes 160a, 160b, and 160c are shown as disposed below the second conductive semiconductor layers 130a, 130b, and 130c, but they are not necessarily limited to this. For example, the first bump electrode 150 and the second bump electrodes 160a, 160b, and 160c may be disposed on the first conductive semiconductor layer 110a, 110b, and 110c.

The first to third light emitting units (P1, P2, P3) include first conductivity type semiconductor layers (110a, 110b, 110c), active layers (120a, 120b, 120c), and second conductivity type semiconductor layers (130a, 130b, 130c) may be included.

Exemplarily, the first light emitting unit (P1) includes a first conductive semiconductor layer (110a), an active layer (120a), and a second conductive semiconductor layer (130a), and the second light emitting unit (P2) includes a first conductive semiconductor layer (110a). It includes a semiconductor layer 110b, an active layer 120b, and a second conductive semiconductor layer 130b, and the third light emitting part P3 includes a first conductive semiconductor layer 110c, an active layer 120c, and a second conductive semiconductor layer 130b. It may include a conductive semiconductor layer 130c.

The first conductive semiconductor layers 110a, 110b, and 110c of the first to third light emitting units P1, P2, and P3 may be arranged to become narrower toward the top, and the first to third light emitting units P1 to third light emitting units P1 , P2, P3) of the second conductive semiconductor layers 130a, 130b, and 130c may be arranged so that their width becomes narrower toward the bottom. That is, the first conductive semiconductor layers 110a, 110b, and 110c and the second conductive semiconductor layers 130a, 130b, and 130c may be manufactured to have narrower widths in opposite directions.

The first conductive semiconductor layers 110a, 110b, and 110c may be implemented with a compound semiconductor such as group III-V or group II-VI, and may be doped with an n-type dopant. The first conductive semiconductor layers (110a, 110b, 110c) have a composition formula of In _x Al _y Ga _{1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x+y≤1) It may be formed of a semiconductor material or a semiconductor material with the composition formula In _x Al _y Ga _{1 -x- y} P (0≤x≤1, 0≤y≤1, 0≤x+y≤1). For example, it may be formed of a material selected from AlInN, AlGaAs, GaP, GaAs, GaAsP, and AlGaInP, but is not limited thereto. The n-type dopant may be selected from Si, Ge, Sn, Se, Te, etc., but is not limited thereto.

The active layers 120a, 120b, and 120c may have any one of a single well structure, a multi-well structure, a single quantum well structure, a multi quantum well (MQW) structure, a quantum dot structure, or a quantum wire structure, The structure of the active layers 120a, 120b, and 120c is not limited to this. When the active layers 120a, 120b, and 120c are formed in a well structure, for example, In _x Al _y Ga _{1 -x- y} N (0≤x≤1, 0 ≤y≤1, 0≤x+y≤1) Single or both having a well layer with a composition formula and a barrier layer with a composition formula In _a Al _b Ga _{1 -a- b} N (0≤a≤1, 0 ≤b≤1, 0≤a+b≤1) It can have a well structure.

In addition, the active layers 120a, 120b, and 120c may have a well layer composition of (Al _p Ga _{1 -p} ) _q In _{1 - q} P layer (however, 0≤p≤1, 0≤q≤1), The composition of the barrier layer may be (Al _p1 Ga _{1 -p1} ) _q1 In _{1 - q1} P layer (however, 0≤p1≤1, 0≤q1≤1), but is not limited thereto. For example, the active layers 120a, 120b, and 120c may be formed in a pair structure of one or more of InGaN/GaN, InGaN/InGaN, GaN/AlGaN, InAlGaN/GaN, GaAs(InGaAs)/AlGaAs, and GaP(InGaP)/AlGaP. However, it is not limited to this. The well layer may be formed of a material having a band gap smaller than that of the barrier layer.

The active layers 120a, 120b, and 120c are composed of electrons (or holes) injected through the first conductive semiconductor layers 110a, 110b, and 110c and holes injected through the second conductive semiconductor layers 130a, 130b, and 130c. This is the layer where (or electrons) meet. The active layers 120a, 120b, and 120c transition to a low energy level as electrons and holes recombine, and can generate light with a corresponding wavelength. For example, the active layers 120a, 120b, and 120c of the first, second, and third light emitting units P1, P2, and P3 may generate light in the blue wavelength range.

The second conductive semiconductor layers 130a, 130b, and 130c may be implemented with a compound semiconductor such as group III-V or group II-VI, and may be doped with a p-type dopant. The second conductive semiconductor layers 130a, 130b, and 130c have a composition formula of In _x Al _y Ga _{1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x+y≤1) It may be formed of a semiconductor material or a semiconductor material having the composition formula In _x Al _y Ga _{1 -x- y} P (0≤x≤1, 0≤y≤1, 0≤x+y≤1). For example, the second conductive semiconductor layers 130a, 130b, and 130c may be formed of a material selected from AlInN, AlGaAs, GaP, GaAs, GaAsP, and AlGaInP, but are not limited thereto. The P-type dopant may be selected from Mg, Zn, Ca, Sr, Ba, etc., but is not limited thereto.

The first to third light emitting units P1, P2, and P3 may emit light in a blue wavelength range through the first conductive semiconductor layers 110a, 110b, and 110c.

The first insulating layer 140 may be disposed below the first to third light emitting units (P1, P2, and P3). The first insulating layer 140 may be formed by selecting at least one selected from the group consisting of SiO ₂ , Si _x O _y , Si ₃ N ₄ , SixNy, SiOxNy, Al ₂ O ₃ , TiO ₂ , AlN, etc. It is not limited. The first insulating layer 140 may electrically insulate the first electrode 151 from the second conductive semiconductor layers 130a, 130b, and 130c and the active layers 120a, 120b, and 120c.

The first insulating layer 140 may be a distributed Bragg reflector (DBR) with a multilayer structure containing Si oxide or Ti compound. However, the first insulating layer 140 is not necessarily limited to this and may include various reflective structures.

The first electrode 151 may be disposed between the separated first conductive semiconductor layers 110a, 110b, and 110c. And the first electrode 151 can electrically connect the separated first conductive semiconductor layers 110a, 110b, and 110c. For example, the first electrode 151 may penetrate the first insulating layer 140 and be electrically connected to the first conductive semiconductor layers 110a, 110b, and 110c.

The first electrode 151 may be spaced apart from the second bump electrodes 160a, 160b, and 160c. And the first electrode 151 can electrically connect the first conductive semiconductor layers 110a, 110b, and 110c of each light emitting structure. The first electrode 151 may be disposed to partially overlap the first conductive semiconductor layers 110a, 110b, and 110c and be electrically connected to them. The first electrode 151 may be an ohmic electrode, but is not limited thereto.

The first bump electrode 150 may be electrically connected to the first electrode 151. Therefore, the first conductive semiconductor layers 110a, 110b, and 110c arranged to be spaced apart from each other are the first It may be electrically connected to the bump electrode 150. The first bump electrode 150 and the first electrode 151 may function as a common electrode, but are not limited to this.

The plurality of second bump electrodes 160a, 160b, and 160c may be electrically connected to the second conductive semiconductor layers 130a, 130b, and 130c. For example, the 2-1 bump electrode 160a is electrically connected to the 2-1 conductivity type semiconductor layer 130a, and the 2-2 bump electrode 160b is electrically connected to the 2-2 conductivity type semiconductor layer 130b. ), and the 2-3rd bump electrode 160c may be electrically connected to the 2-3rd conductivity type semiconductor layer 130c.

The first bump electrode 150 and the second bump electrodes 160a, 160b, and 160c are formed of metal such as Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, Hf, Cu, etc. It can be. Additionally, the first bump electrode 150 and the second bump electrodes 160a, 160b, and 160c may be formed of one or more layers of a mixture of a conductive oxide film and a metal, but are not limited thereto.

A reflective layer may be further disposed below the second conductive semiconductor layers 130a, 130b, and 130c, but is not limited to this.

Second electrodes 161a, 161b, and 161c may be disposed between the plurality of second bump electrodes 160a, 160b, and 160c and the second conductive semiconductor layers 130a, 130b, and 130c. However, it is not necessarily limited to this, and the second bump electrodes 160a, 160b, and 160c may include a material in ohmic contact with the second conductive semiconductor layers 130a, 130b, and 130c.

The support layer 170 includes an insulating layer 140, a first electrode 151, a first conductive semiconductor layer (110a, 110b, 110c), an active layer (120a, 120b, 120c), and a second conductive semiconductor layer (130a, It may be disposed below the semiconductor device to support 130b, 130c). Additionally, the support layer 170 has low light transmittance and may function as a light reflection layer and/or a light absorption layer.

The support layer 170 may have a structure in which reflective particles are dispersed in a substrate. The substrate may be any one or more of epoxy resin, silicone resin, polyimide resin, urea resin, and acrylic resin. As an example, the polymer resin may be a silicone resin. Reflective particles may include inorganic particles such as TiO ₂ or SiO ₂ . However, it is not necessarily limited to this, and the support layer may be EMC (Epoxy Molding Compound) or SMC (Silicone Molding Compound) resin.

The support layer 170 may include 10 to 50 wt%, or 15 to 30 wt% of inorganic particles. If the particle content is less than 10 wt%, it is difficult to control the permeability below 20%, and if the content is greater than 50 wt%, cracks may occur due to the high content of inorganic particles.

The support layer 170 may have a coefficient of thermal expansion (CTE) of 50 ppm/°C or less. When the thickness of the support layer 170 is 70㎛ or more, the transmittance of the support layer 170 may be 20% or less. As a result, the support layer 170 can reflect light generated from the first to third light emitting units P1, P2, and P3 toward the top of the first conductive semiconductor layers 110a, 110b, and 110c. As a result, the semiconductor device according to the embodiment can provide improved luminous efficiency.

Figure 3 is a cross-sectional view of a semiconductor device according to a second embodiment of the present invention, and Figures 4A and 4B are graphs measuring changes in luminous flux and color purity according to the width of the partition of the semiconductor device according to the embodiment.

Referring to FIG. 3, the semiconductor device 1B according to the second embodiment includes wavelength conversion layers 181, 182, and 183 disposed on the first to third light emitting units P1, P2, and P3, and a partition wall ( 190) may further be included.

The wavelength conversion layers 181, 182, and 183 may convert the wavelength of light emitted from the first to third light emitting units P1, P2, and P3.

For example, the first wavelength conversion layer 181 may convert the light emitted from the first light emitting unit (P1) into green light, and the second wavelength conversion layer 182 may convert the light emitted from the second light emitting unit (P2) into green light. The light can be converted into red light, and the third wavelength conversion layer 183 can convert the light emitted from the third light emitting unit P3 into blue light. If the third light emitting unit P3 emits blue light, the third wavelength conversion layer 183 may not change the wavelength or may not be disposed.

However, it is not necessarily limited to this, and the first to third wavelength conversion layers 181, 182, and 183 convert the blue (B) wavelength light emitted from the first to third light emitting units P1, P2, and P3. It can be absorbed and converted into light in the white (W) wavelength range.

The wavelength conversion layers 181, 182, and 183 may have a structure in which wavelength conversion particles are dispersed in a polymer resin selected from epoxy resin, silicone resin, polyimide resin, urea resin, and acrylic resin, but are not limited to this.

The wavelength conversion particles may include one or more of phosphors and QDs (Quantum Dots). Hereinafter, wavelength conversion particles are described as phosphors.

The phosphor may include any one of YAG-based, TAG-based, silicate-based, sulfide-based, or nitride-based fluorescent materials, but the embodiment is not limited to the type of phosphor.

Exemplarily, YAG and TAG-based fluorescent materials may be selected from (Y, Tb, Lu, Sc, La, Gd, Sm) ₃ (Al, Ga, In, Si, Fe) ₅ (O, S) ₁₂ :Ce. Silicate-based fluorescent materials can be selected from (Sr, Ba, Ca, Mg) ₂ SiO ₄ : (Eu, F, Cl). In addition, sulfide-based fluorescent materials can be selected from (Ca,Sr)S:Eu, (Sr,Ca,Ba)(Al,Ga) ₂ S ₄ :Eu, and nitride-based phosphors can be selected from (Sr, Ca, Si, Al) , O)N:Eu (e.g., CaAlSiN ₄ :Eu β-SiAlON:Eu) or Ca-α SiAlON:Eu (Cax,My)(Si,Al) ₁₂ (O,N) ₁₆ . At this time, M is at least one of Eu, Tb, Yb, or Er and may be selected from phosphor components satisfying 0.05<(x+y)<0.3, 0.02<x<0.27 and 0.03<y<0.3.

The wavelength conversion layers 181, 182, and 183 as described above may be separated by the partition 190 into areas that overlap in the vertical direction with the first to third light emitting units P1, P2, and P3. The partition wall 190 may be disposed between the wavelength conversion layers 181, 182, and 183 and between the light emitting units P1, P2, and P3. The partition 190 may include a light absorbing material such as carbon black or graphite, or may also include a reflective material that reflects light.

The partition wall 190 may have a structure in which reflective particles are dispersed in a substrate. The substrate may be any one or more of epoxy resin, silicone resin, polyimide resin, urea resin, and acrylic resin. As an example, the polymer resin may be a silicone resin. Reflective particles may include inorganic particles such as TiO ₂ or SiO ₂ , but are not limited thereto.

The partition wall 190 may contain 20 wt% or more of inorganic particles. For example, the inorganic particles of the partition wall may be 20 wt% to 70 wt%. When inorganic particles are included in an amount of less than 20 wt%, there is a problem in that the reflectivity of the partition wall 190 is lowered and the color purity is lowered. For example, when green light is output by turning on only the first light emitting unit (P1), part of the light emitted from the first light emitting unit (P1) passes through the partition wall 190 and is converted into red light by the second wavelength conversion layer 182. can be converted to This may lower color purity. If the inorganic particles in the partition 190 exceed 70 wt%, the content of the polymer resin decreases, so cracks may occur.

The partition 190 may include a first region disposed between the wavelength conversion layers 181, 182, and 183, and a second region disposed between the first to third light emitting units P1, P2, and P3. .

For example, the width d1 of the first area may be greater than the width d2 of the second area. However, it is not necessarily limited to this, and the width d1 of the first area and the width d2 of the second area may be the same.

The widths d1 and d2 of the first and second regions may be a distance in a direction perpendicular to the thickness direction of the plurality of light emitting parts P1, P2, and P3 (X-axis direction).

The width d1 of the first region of the partition wall 190 may be 10 μm or more. The width d1 of the first region may be 10 ㎛ to 50 ㎛. When the width d1 of the first area is 10 μm or more, the partition wall 190 can improve color purity by blocking light emitted from the first to third light emitting units P1, P2, and P3.

For example, when the content of inorganic particles is more than 20wt% and the thickness is more than 30㎛, the partition wall 190 blocks the light emitted from the first to third light emitting units (P1, P2, and P3) to prevent overlapping and color mixing of light. It can be prevented.

When the width d1 of the first region is greater than 50 μm, the width between the first to third light emitting units P1, P2, and P3 is widened, thereby increasing the size of the semiconductor device. The method of forming the partition wall 190 is not particularly limited. For example, the partition wall 190 can be formed using photolithography, imprinting, roll-to-roll printing, and inkjet printing.

The width d1 of the first area may be greater than the maximum width d2 of the second area. Accordingly, the width of each of the first to third wavelength conversion layers 181, 182, and 183 in the X-axis direction may be smaller than the width of the first to third light emitting units P1, P2, and P3. According to this configuration, the width d1 of the barrier rib can be increased while manufacturing the semiconductor device the same size. Exemplarily, the width of each of the first to third wavelength conversion layers 181, 182, and 183 in the there is.

Referring to FIGS. 4A and 4B, it can be seen that as the width of the first region increases, the luminous flux of the plurality of light emitting units decreases somewhat, but color purity is greatly improved. That is, when the width of the first region was 20㎛, color purity improved by 102%, when the width of the first region was 30㎛, it improved by 105%, and when the width of the first region was 50㎛, it improved by 106%.

Figure 5 is a cross-sectional view of a semiconductor device according to a third embodiment of the present invention, and Figure 6 is a modified example of Figure 5.

Referring to FIG. 5 , the semiconductor device 1C according to the third embodiment may include wavelength conversion layers 181, 182, and 183 and a color filter layer 220 disposed on the partition wall 190.

The color filter layer 220 may include a plurality of color filters 221, 222, and 223 and a black matrix 224. First to third color filters 221, 222, and 223 may be disposed in the color filter layer 220. For example, the first color filter 221 may be a green filter, the second color filter 222 may be a red filter, and the third color filter 223 may be a blue filter.

A plurality of color filters 221, 222, and 223 can be produced by mixing green/red/blue pigments with an acrylic resin such as Methylmethacrylate-Butadiene-Styrene (MBS). For example, the color filter layer 220 may be formed by coating, exposing, developing, and curing (firing) a pigment composition dispersed in photoresist.

The color filter layer 220 can improve the color purity of light converted by the wavelength conversion layers 181, 182, and 183. For example, the first color filter 221 may improve the color purity of green light by blocking light other than the green light converted by the first wavelength conversion layer 181.

Additionally, when the wavelength conversion layers 181, 182, and 183 convert the light of the first to third light emitting units P1, P2, and P3 into white light, the color filter layer 220 converts the light in the white (W) wavelength range into white light. It can be separated into blue (B), green (G), and red (R) wavelength bands.

The color filter layer 220 may include a black matrix 224 disposed between the first to third color filters 221, 222, and 223. However, it is not necessarily limited to this, and is not particularly limited as long as it has a structure that can be disposed and partitioned between the first to third color filters 221, 222, and 223.

The thickness of the black matrix 224 may be 5 μm to 55 μm. If the thickness is less than 5㎛, it may be too thin to partition the first to third color filters 221, 222, and 223, and if the thickness is greater than 55㎛, the overall thickness of the filter becomes thick. However, the thickness of the black matrix 224 is not necessarily limited to this.

The first intermediate layer 210 may be disposed between the color filter layer 220 and the wavelength conversion layers 181, 182, and 183 to bond them. As described above, the color filters 221, 222, and 223 may use acrylic resin as their main raw material, and the partition walls and wavelength conversion layers 181, 182, and 183 may use silicone resin as their main raw material. However, since acrylic resin and silicone resin have poor adhesion due to differences in physical properties, it may not be easy to manufacture the color filters 221, 222, and 223 directly on the wavelength conversion layers 181, 182, and 183.

The first intermediate layer 210 is an inorganic material and may include oxide or nitride. For example, the first intermediate layer 210 is made of indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (IGZO), and IGTO. (indium gallium tin oxide), AZO (aluminum zinc oxide), ATO (antimony tin oxide), GZO (gallium zinc oxide), IZON (IZO Nitride), AGZO (Al-Ga ZnO), IGZO (In-Ga ZnO), _{In a} single layer _{or multilayer} , including _at least one _of ZnO, IrOx, _RuOx , NiO, RuOx/ITO, ZnO, SiO ₂ , Si can be formed. However, it is not necessarily limited to this, and the first intermediate layer 210 may be selected without limitation as long as it is a material that has excellent adhesion to both acrylic resin and silicone resin.

The thickness of the first intermediate layer 210 may be 5 nm to 1,000 nm, or 40 nm to 200 nm. If the thickness is less than 5nm, it is difficult to prevent the acrylic resin from diffusing into the phosphor, and if the thickness is greater than 1000nm, the transmittance becomes less than 70%, which causes a decrease in the luminous flux.

The total thickness (L ₁ ) of the partition wall 190, the first intermediate layer 210, the color filter layer 220, and the encapsulation layer 230 may be 30 μm to 100 μm. At this time, when the total thickness (L ₁ ) of the partition 190, the first intermediate layer 210, the color filter layer 220, and the encapsulation layer 230 is less than 30㎛, the wavelength conversion layers 181, 182, and 183 As the number of particles is small, color conversion may be reduced, and the process may be difficult. In addition, when the total thickness (L ₁ ) of the partition wall 190, the first intermediate layer 210, the color filter layer 220, and the encapsulation layer 230 is greater than 100 μm, light transmittance may decrease depending on the thickness. Here, thickness means distance in the Y-axis direction.

Referring to FIG. 6, in the semiconductor device 1C' of the modified example, the second intermediate layer 240 may be disposed between the first intermediate layer 210 and the wavelength conversion layers 181, 182, and 183. The surfaces of the wavelength conversion layers 181, 182, and 183 may not be flat due to the process or because the phosphor particles are dispersed in the resin. Therefore, when forming a color filter layer on the surface of the wavelength conversion layers 181, 182, and 183, there is a problem of reduced reliability. The first intermediate layer 210 may be disposed on the second intermediate layer 240 to provide a flat surface.

However, it is not necessarily limited to this, and the configuration of the second intermediate layer 240 may be omitted. For example, if the surface roughness of the wavelength conversion layers 181, 182, 183 and the partition wall 190 is 10 μm or less or 5 μm or less, the second intermediate layer 240 may be omitted. At this time, the surface roughness of the first intermediate layer 210 may be determined by the surface roughness of the wavelength conversion layers 181, 182, and 183 and the partition wall 190. A leveling or polishing process may be performed to control the surface roughness of the wavelength conversion layers 181, 182, and 183 and the partition wall 190.

The second intermediate layer 240 may include the same material for adhesion to the wavelength conversion layers 181, 182, and 183. Exemplarily, the second intermediate layer 240 and the wavelength conversion layers 181, 182, and 183 may both include silicone resin.

The thickness of the second intermediate layer 240 may be 3,000 nm to 20,000 nm. If the thickness of the second intermediate layer 240 is less than 3,000 nm, surface planarization may be poor, and if the thickness is greater than 20,000 nm, there is a problem of reduced light transmittance. Accordingly, the thickness ratio of the first intermediate layer 210 and the second intermediate layer 240 may be 1:4000 to 1:3.

The encapsulation layer 230 may be disposed on the color filter layer 220 . The encapsulation layer 230 is disposed on the color filter layer 220 to cover the pixel and the semiconductor device, and forms a plurality of light emitting units (P1, P2, P3), wavelength conversion layers 181, 182, 183, and a partition wall 190. can protect.

The encapsulation layer 230 is made of a heat and/or light curable resin and is coated on the color filter layer 220 in a liquid state, and may be cured through a curing process using heat and/or light. At this time, the encapsulation layer 230 may also serve to buffer external pressure.

7A to 7F are diagrams showing a method of manufacturing a semiconductor device according to a third embodiment.

Referring to FIG. 7A, a first conductivity type semiconductor layer 110, an active layer 120, and a second conductivity type semiconductor layer 130 may be sequentially formed on the substrate 1. The substrate 1 may be formed of a material selected from sapphire (Al ₂ O ₃ ), SiC, GaAs, GaN, ZnO, Si, GaP, InP, and Ge, but is not limited thereto.

Although not shown, a buffer layer (not shown) may be further provided between the first conductive semiconductor layer 110 and the substrate 1. The buffer layer can alleviate lattice mismatch between the first conductive semiconductor layer 110, the active layer 120, 120, and the second conductive semiconductor layer 130 and the substrate 1. The buffer layer may be a combination of group III and group V elements or may include any one of GaN, InN, AlN, InGaN, AlGaN, InAlGaN, and AlInN. The buffer layer may be doped with a dopant, but is not limited to this.

The first conductive semiconductor layer 110, the active layer 120, and the second conductive semiconductor layer 130 are formed using Metal Organic Chemical Vapor Deposition (MOCVD), Chemical Vapor Deposition (CVD), or plasma. It can be formed using methods such as plasma-enhanced chemical vapor deposition (PECVD), molecular beam epitaxy (MBE), hydride vapor phase epitaxy (HVPE), and sputtering. It can be done, but is not limited to this.

Referring to FIG. 7B, the first insulating layer 140, the first electrode 151, and the second electrodes 161a, 161b, and 161c may be formed on the second conductive semiconductor layer 130. Thereafter, after forming the support layer 170, the first bump electrode 150 and the second bump electrodes 160a, 160b, and 160c can be formed through. However, the present invention is not limited to this, and the first bump electrode 150 and the second bump electrodes 160a, 160b, and 160c may be formed, and then the support layer 170 may be formed.

At this time, the second conductive semiconductor layers 130a, 160b, and 160c and the active layers 120a, 120b, and 120c may be mesa-etched to be separated from each other. Accordingly, the second conductive semiconductor layers 130a, 160b, and 160c and the active layers 120a, 120b, and 120c may be formed to have a narrow width in the direction away from the substrate 1.

Referring to FIG. 7C, the substrate 1 can be removed. The substrate 1 may use a laser lift-off (LLO) method, but is not necessarily limited to this. Thereafter, the first conductive semiconductor layer 110 can be separated into each light emitting unit (P1, P2, and P3). Accordingly, the first conductive semiconductor layer 110 may be formed to have a narrow width in the opposite direction to the second conductive semiconductor layer 130 during the mesa etching process.

Referring to FIG. 7D, wavelength conversion layers 181, 182, and 183 and a partition wall 190 may be formed on the first conductive semiconductor layer 110. At this time, the wavelength conversion layers 181, 182, and 183 may be formed first and then the barrier rib 190 may be formed, but this is not necessarily limited. The barrier rib 190 is first formed and then a through hole is formed to allow the wavelength to pass through the barrier wall 190. Conversion layers 181, 182, and 183 may be formed.

Referring to FIG. 7E, a first intermediate layer 210 may be formed on the wavelength conversion layers 181, 182, and 183, and first to third color filters 221, 222, and 223 may be formed thereon. At this time, the black matrix may be first formed and aligned with the wavelength conversion layers 181, 182, and 183, and then the first to third color filters 221, 222, and 223 may be formed, but the method is not limited thereto.

Specifically, green pigment is applied to the entire surface using a method such as spin coating or bar coating, and a mask process is performed to apply the green pigment to the area corresponding to the first wavelength conversion layer 181. 1 A color filter 221 can be formed.

Thereafter, red pigment is applied to the entire surface using a method such as spin coating or bar coating, and a mask process is performed to form a second layer in the area corresponding to the second wavelength conversion layer 182. A color filter 222 may be formed.

In addition, blue pigment is applied to the entire surface using a method such as spin coating or bar coating, and a mask process is performed to form a third layer in the area corresponding to the third wavelength conversion layer 183. A color filter 223 may be formed. Afterwards, the encapsulation layer 230 may be formed on the color filter layer 220 as shown in FIG. 7F.

Figure 8 is a cross-sectional view of a semiconductor device according to a fourth embodiment of the present invention.

Referring to FIG. 8, the semiconductor device 1D has a blocking layer 200 disposed between the wavelength conversion layers 181, 182, and 183 and between the first to third light emitting units P1, P2, and P3. It may further include. The blocking layer 200 may also be disposed on the first insulating layer 140.

The blocking layer 200 may block light emitted from the first to third light emitting units P1, P2, and P3 from being emitted to the adjacent wavelength conversion layers 181, 182, and 183. For example, the blocking layer 200 may prevent light emitted from the first light emitting unit P1 from entering the second wavelength conversion layer 182. With this configuration, the blocking layer 200 can prevent overlapping and color mixing of light.

The blocking layer 200 may include metal. The blocking layer 200 includes a metal that reflects light and can reflect light moving to the adjacent wavelength conversion layers 181, 182, and 183. For example, the metal may include Ag, Ni, Ti, and Al, but is not limited thereto.

The width d3 of the blocking layer 200 may be 20 nm or more. Preferably, the width d3 of the blocking layer 200 may be 100 nm to 1000 nm. If the width d3 of the blocking layer 200 is less than 100 nm, it may be difficult to fix the blocking layer 200 and the surface roughness may increase. Additionally, if the width d3 of the blocking layer 200 is greater than 1000 nm, peeling may occur due to stress due to weight, etc.

The blocking layer 200 may be formed by depositing metal, but is not limited thereto.

The color filter layer 220 may include a plurality of color filters 221, 222, and 223 and a black matrix 224. First to third color filters 221, 222, and 223 may be disposed in the color filter layer 220. For example, the first color filter 221 may be a green filter, the second color filter 222 may be a red filter, and the third color filter 223 may be a blue filter.

The first intermediate layer 210 may be disposed between the color filter layer 220 and the wavelength conversion layers 181, 182, and 183 to bond them. The characteristics described in FIG. 5 may be applied to the color filter layer 220 and the first intermediate layer 210 as is. Additionally, a second intermediate layer in FIG. 6 may be further disposed.

9A to 9D are diagrams showing a method of manufacturing a semiconductor device according to a fourth embodiment.

The manufacturing process described in FIGS. 7A to 7C can be applied to the light emitting device according to FIG. 9A as is. That is, after removing the substrate, the first conductive semiconductor layer 110 can be separated into each light emitting unit (P1, P2, and P3). Accordingly, the first conductive semiconductor layer 110 may be formed to have a narrow width in the opposite direction to the second conductive semiconductor layer 130 during the mesa etching process.

Referring to FIG. 9B, wavelength conversion layers 181, 182, and 183 and a photosensitive layer (S) may be formed on the first conductive semiconductor layer 110. At this time, the wavelength conversion layers 181, 182, and 183 may be formed first, and then the photosensitive layer (S) may be formed, but this is not necessarily limited, and the photosensitive layer (S) may be formed first, and then the through hole may be formed. Wavelength conversion layers 181, 182, and 183 may be formed therein.

Referring to FIG. 9C, a blocking layer 200 is formed between the wavelength conversion layers 181, 182, and 183, the first to third light emitting units (P1, P2, and P3), and the first electrode 151 and the partition wall 190. This can be formed. As an example, the blocking layer 200 may be deposited after removing the photosensitive layer (S).

The blocking layer 200 can be formed using methods such as Metal Organic Chemical Vapor Deposition (MOCVD), Chemical Vapor Deposition (CVD), and sputtering, but is not limited thereto.

A blocking layer 200 may be formed and a partition wall 190 may be formed on the blocking layer 200 .

Referring to FIG. 9D, the wavelength conversion layers 181, 182, 183, the barrier rib 190, and the barrier layer 200 are formed so that each of the wavelength conversion layers 181, 182, and 183 is exposed to the upper surface. And a portion of the blocking layer 200 may be removed. The removal method may apply a leveling or polishing process, but is not necessarily limited thereto.

FIG. 10 is a cross-sectional view of a modified example of the semiconductor device according to the fourth embodiment shown in FIG. 8.

Referring to FIG. 10, the blocking layer 200 of the semiconductor device 1D' is between the wavelength conversion layers 181, 182, 183, the first to third light emitting units P1, P2, and P3, and the partition wall 190. can be placed in At this time, the first insulating layer 140 may be exposed between the blocking layers 200.

The blocking layer 200 may block light emitted from the first to third light emitting units P1, P2, and P3 from being emitted to the adjacent wavelength conversion layers 181, 182, and 183. With this configuration, the blocking layer 200 can prevent light from overlapping and mixing colors. The above description may be equally applied to the blocking layer 200.

Figure 11 is a cross-sectional view of a semiconductor device according to a fifth embodiment of the present invention.

Referring to FIG. 11, the semiconductor element 1E is electrically connected to the first to third light emitting units P1, P2, and P3 and spaced apart first conductive semiconductor layers 110a, 110b, and 110c, respectively. 1 Bump electrodes 150a, 150b, 150c, a second electrode 162 electrically connecting the separated second conductive semiconductor layers 130a, 130b, 130c, and a second electrode electrically connected to the second electrode 162. It may include 2 bump electrodes 160.

In the semiconductor device 1E according to the embodiment, the first bump electrodes 150a, 150b, and 150c are electrically connected to the first conductive semiconductor layers 110a, 110b, and 110c, respectively, and the second bump electrode 160 is It may be electrically connected to the second conductive semiconductor layers 130a, 130b, and 130c through the second electrode 162.

The second electrode 162 may be disposed between the second conductive semiconductor layers 130a, 130b, and 130c spaced apart from the first to third light emitting units P1, P2, and P3. And the second electrode 162 can electrically connect the spaced apart second conductive semiconductor layers 130a, 130b, and 130c.

Additionally, a first insulating layer 140 may be disposed below the first to third light emitting units (P1, P2, and P3). Additionally, a reflective electrode 161 may be disposed below the second conductive semiconductor layers 130a, 130b, and 130c.

For example, between the first conductive semiconductor layers 110a, 110b, and 110c of the first to third light emitting units P1, P2, and P3 and the first bump electrodes 150a, 150b, and 150c, respectively, a first Electrodes 151a, 151b, and 151c may be disposed. The reflective electrode 161 is formed of a highly reflective material such as Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, and Hf, or is made of the high reflective material and IZO, IZTO, IAZO. , IGZO, IGTO, AZO, ATO, etc. may be mixed to form a single layer or multilayer, but is not limited thereto.

And the second electrode 162 is disposed between the reflective electrodes 161 to electrically connect the second conductive semiconductor layers 130a, 130b, and 130c and the second bump electrode 160. The second electrode 162 may serve as a common electrode that applies power to the first to third light emitting units (P1, P2, and P3).

Referring again to FIG. 11, the first insulating layer 140 may be arranged to cover the lower portions of the first to third light emitting units (P1, P2, and P3). The second insulating layer 141 may cover part of the first electrodes 151a, 151b, and 151c, part of the reflective electrode 161, and the entire second electrode 162.

The first insulating layer 140 and the second insulating layer 141 are at least one from the group consisting of SiO ₂ , Si _x O _y , Si ₃ N ₄ , SixNy, SiOxNy, Al ₂ O ₃ , TiO ₂ , AlN, etc. It may be selected and formed, but is not limited thereto.

The first insulating layer 140 may be a distributed Bragg reflector (DBR) with a multilayer structure containing Si oxide or Ti compound. However, the first insulating layer 140 is not necessarily limited to this and may include various reflective structures.

The support layer 170 may be disposed below the plurality of light emitting units P1, P2, and P3 to support the plurality of light emitting units P1, P2, and P3 and the second electrode 162. Additionally, the support layer 170 has low light transmittance and may function as a light reflection layer and/or a light absorption layer.

The support layer 170 may have a structure in which reflective particles are dispersed in a substrate. The substrate may be any one or more of light-transmissive epoxy resin, silicone resin, polyimide resin, urea resin, and acrylic resin. As an example, the polymer resin may be a silicone resin. Reflective particles may include inorganic particles such as TiO ₂ or SiO ₂ . However, it is not necessarily limited to this, and the support layer may be EMC (Epoxy Molding Compound) or SMC (Silicone Molding Compound) resin.

The support layer 170 may include 10 to 50 wt%, or 15 to 30 wt% of inorganic particles. If the particle content is less than 10 wt%, it is difficult to control the permeability below 20%, and if the content is greater than 50 wt%, cracks may occur due to the high content of inorganic particles.

The support layer 170 may have a coefficient of thermal expansion (CTE) of 50 ppm/°C or less. Accordingly, when the thickness of the support layer 170 is 70 μm or more, the transmittance of the support layer 170 may be 20% or less. As a result, the support layer 170 can reflect light generated from the first to third light emitting units P1, P2, and P3 toward the top of the first conductive semiconductor layers 110a, 110b, and 110c. As a result, the semiconductor device according to one embodiment can provide improved luminous efficiency.

The first bump electrodes 150a, 150b, and 150c may penetrate the support layer 170 and be electrically connected to the first electrodes 151a, 151b, and 151c.

The second bump electrode 160 may penetrate the support layer 170 and be electrically connected to the reflective electrode 161. The reflective electrodes 161 may be electrically connected to each other by the second electrode 162. However, it is not limited to this.

And the second bump electrode 160 is connected to the second conductive semiconductor layers 130a, 130b, and 130c of the first to third light emitting units (P1, P2, and P3) through the reflective electrode 161 and the second electrode 162. ) can be electrically connected to.

FIG. 12 is a cross-sectional view of a semiconductor device according to a sixth embodiment of the present invention, and FIG. 13 is a cross-sectional view of a semiconductor device according to a seventh embodiment of the present invention.

Referring to FIG. 12, the semiconductor device 1F according to the embodiment includes wavelength conversion layers 181, 182, and 183 disposed on the first to third light emitting units P1, P2, and P3, and a partition wall 190. It may further include.

The wavelength conversion layers 181, 182, and 183 may convert the wavelength of light emitted from the first to third light emitting units P1, P2, and P3.

For example, the first wavelength conversion layer 181 may convert the light emitted from the first light emitting unit (P1) into green light, and the second wavelength conversion layer 182 may convert the light emitted from the second light emitting unit (P2) into green light. The light can be converted into red light, and the third wavelength conversion layer 183 can convert the light emitted from the third light emitting unit P3 into blue light. If the third light emitting unit P3 emits blue light, the third wavelength conversion layer 183 may not change the wavelength.

However, it is not necessarily limited to this, and the first to third wavelength conversion layers 181, 182, and 183 convert the blue (B) wavelength light emitted from the first to third light emitting units P1, P2, and P3. It can be absorbed and converted into light in the white (W) wavelength range.

The wavelength conversion layers 181, 182, and 183 may have a structure in which wavelength conversion particles are dispersed in a polymer resin selected from transparent epoxy resin, silicone resin, polyimide resin, urea resin, and acrylic resin, but are not limited to this.

The wavelength conversion particles may include one or more of phosphors and QDs (Quantum Dots). Hereinafter, wavelength conversion particles are described as phosphors.

The phosphor may include any one of YAG-based, TAG-based, silicate-based, sulfide-based, or nitride-based fluorescent materials, but the embodiment is not limited to the type of phosphor.

Exemplarily, YAG and TAG-based fluorescent materials may be selected from (Y, Tb, Lu, Sc, La, Gd, Sm) ₃ (Al, Ga, In, Si, Fe) ₅ (O, S) ₁₂ :Ce. Silicate-based fluorescent materials can be selected from (Sr, Ba, Ca, Mg) ₂ SiO ₄ : (Eu, F, Cl). In addition, sulfide-based fluorescent materials can be selected from (Ca,Sr)S:Eu, (Sr,Ca,Ba)(Al,Ga) ₂ S ₄ :Eu, and nitride-based phosphors can be selected from (Sr, Ca, Si, Al) , O)N:Eu (e.g., CaAlSiN ₄ :Eu β-SiAlON:Eu) or Ca-α SiAlON:Eu (Cax,My)(Si,Al) ₁₂ (O,N) ₁₆ . At this time, M is at least one of Eu, Tb, Yb, or Er and may be selected from phosphor components satisfying 0.05<(x+y)<0.3, 0.02<x<0.27 and 0.03<y<0.3.

The wavelength conversion layers 181, 182, and 183 as described above may be separated by the partition 190 into areas that overlap in the vertical direction with the first to third light emitting units P1, P2, and P3. The partition wall 190 may be disposed between the wavelength conversion layers 181, 182, and 183 and between the light emitting units P1, P2, and P3. The partition 190 may include a light absorbing material such as carbon black or graphite, or may also include a reflective material that reflects light.

The partition wall 190 may have a structure in which reflective particles are dispersed in a substrate. The substrate may be any one or more of epoxy resin, silicone resin, polyimide resin, urea resin, and acrylic resin. As an example, the polymer resin may be a silicone resin. Reflective particles may include inorganic particles such as TiO ₂ or SiO ₂ , but are not limited thereto.

The partition wall 190 may contain 20 wt% or more of inorganic particles. For example, the inorganic particles of the partition wall may be 20 wt% to 70 wt%. When inorganic particles are included in an amount of less than 20 wt%, there is a problem in that the reflectivity of the partition wall 190 is lowered and the color purity is lowered. For example, when green light is output by turning on only the first light emitting unit (P1), part of the light emitted from the first light emitting unit (P1) passes through the partition wall 190 and is converted into red light by the second wavelength conversion layer 182. It can be converted to . This may lower color purity. Cracks may occur in the partition wall 190 if the inorganic particles exceed 70wt%.

The partition 190 may include a first region disposed between the wavelength conversion layers 181, 182, and 183, and a second region disposed between the first to third light emitting units P1, P2, and P3. . The description of the partition wall 190 can be applied in the same way as above.

Referring to FIG. 13 , the semiconductor device 1G according to the embodiment may include wavelength conversion layers 181, 182, and 183 and a color filter layer 220 disposed on the partition wall 190.

The color filter layer 220 may include first to third color filters 221, 222, and 223. For example, the first color filter 221 may be a green filter, the second color filter 222 may be a red filter, and the third color filter 223 may be a blue filter.

The color filter layer 220 can be produced by mixing green/red/blue pigment with an acrylic resin such as Methylmethacrylate-Butadiene-Styrene (MBS). For example, the color filter layer 220 may be formed by coating, exposing, developing, and curing (firing) a pigment composition dispersed in photoresist.

The color filter layer 220 can improve the color purity of light converted by the wavelength conversion layers 181, 182, and 183. For example, the first color filter 221 may improve the color purity of green light by blocking light other than the green light converted by the first wavelength conversion layer 181.

Additionally, when the wavelength conversion layers 181, 182, and 183 convert the light of the first to third light emitting units P1, P2, and P3 into white light, the color filter layer 220 converts the light in the white (W) wavelength range into white light. It can be separated into blue (B), green (G), and red (R) wavelength bands.

The color filter layer 220 may include a black matrix 224 disposed between the first to third color filters 221, 222, and 223.

The first intermediate layer 210 may be disposed between the color filter layer 220 and the wavelength conversion layers 181, 182, and 183. As described above, the color filter layer 220 may use acrylic resin as its main raw material, and the partition walls and wavelength conversion layers 181, 182, and 183 may use silicone resin as its main raw material. However, since the adhesion between acrylic resin and silicone resin is poor, it may not be easy to manufacture the color filter layer 220 directly on the wavelength conversion layers 181, 182, and 183.

The first intermediate layer 210 is an inorganic material and may include oxide or nitride. By way of example, the first intermediate layer 210 may include ITO, ZnO, AZO, and SiO ₂ . However, it is not necessarily limited to this, and the first intermediate layer 210 may be selected from a material that has excellent adhesion to both acrylic resin and silicone resin.

The thickness of the first intermediate layer 210 may be 5 nm to 1000 nm, or 40 nm to 200 nm. If the thickness is less than 5nm, it is difficult to prevent the acrylic resin from diffusing into the phosphor, and if the thickness is greater than 1000nm, the transmittance becomes less than 70%, which causes a decrease in the luminous flux. Although not shown, a second intermediate layer may be disposed between the first intermediate layer 210 and the wavelength conversion layers 181, 182, and 183.

The encapsulation layer 230 may be disposed on the color filter layer 220 . The encapsulation layer 230 is disposed on the color filter layer 220 to cover the pixel and the semiconductor device, and forms a plurality of light emitting units (P1, P2, P3), wavelength conversion layers 181, 182, 183, and a partition wall 190. can protect.

The encapsulation layer 230 is made of a heat and/or light curable resin and is coated on the color filter layer 220 in a liquid state, and may be cured through a curing process using heat and/or light. At this time, the encapsulation layer 230 also serves to buffer external pressure.

Figure 14 is a plan view of a display device according to an embodiment of the present invention, and Figure 15 is a diagram showing a state in which a semiconductor element and a circuit board are electrically connected.

Referring to FIGS. 14 and 15 , the display device includes a panel 40 including a plurality of pixel regions defined as areas where common wiring 41 and driving wiring 42 intersect, and semiconductor elements disposed in each pixel region. , a first driver 30 applying a driving signal to the common wiring 41, a second driver 20 applying a driving signal to the driving wiring 42, and the first driver 30 and the second driver 20 ) may include a controller 50 that controls.

The second partition 46 disposed on the panel 40 is disposed between the semiconductor devices disposed in each pixel area and can support the semiconductor devices, the common wiring 41, the driving wiring 42, etc. Accordingly, even if the panel 44 has a large area, disconnection of the common wiring 41 and the driving wiring 42 can be prevented. The second partition 46 is made of a material such as carbon black, graphite, etc., and can prevent light leakage between adjacent pixel areas, but is not limited to this.

The common wiring 41 may be electrically connected to the first electrode 150 of the semiconductor device. And, the first, second, and third driving wires 43, 44, and 45 are connected to the second electrodes 160a, 160b, and 160c of the first, second, and third light emitting units P1, P2, and P3, respectively. Can be electrically connected.

The direction in which the first electrode 150 and the second electrodes 160a, 160b, and 160c are disposed with respect to the active layers 120a, 120b, and 120c are the second conductive semiconductor layers 130a, 130b, and 130c of the semiconductor device. Since the common wiring 41 and the driving wiring 42 are exposed, the common wiring 41 and the driving wiring 42 may have a structure separated by at least one insulating film, but are not limited to this. In the embodiment, the first and second insulating films 1a and 1b are shown.

Semiconductor devices may be arranged in each pixel area of the panel 40. One semiconductor device can function as a pixel of a display device. Additionally, the first to third light emitting units (P1, P2, and P3) of the semiconductor device may function as first, second, and third subpixels. For example, the first light emitter P1 may function as a blue subpixel, the second light emitter P2 may function as a green subpixel, and the third light emitter P3 may function as a red subpixel. It can function. Accordingly, white light can be generated by mixing light in the blue, green, and red wavelength ranges emitted from one semiconductor device as described above.

Additionally, semiconductor devices may be placed on a substrate in a chip scale package (CSP).

The controller 50 may output a control signal to the first and second drivers 30 and 20 so that power is selectively applied to the common wiring 41 and the driving wiring 42. Accordingly, the first to third light emitting units (P1, P2, and P3) of the semiconductor device can be individually controlled.

A typical display device individually arranges a light-emitting device for each subpixel of a pixel, or uses a semiconductor device containing two or more light-emitting devices packaged through additional packaging processes such as die-bonding and wire bonding to form a pixel. It can be placed. Therefore, since a typical display device must consider the packaging area, the area of the area that actually emits light out of the total area of the panel is narrow, resulting in low luminous efficiency.

On the other hand, in the display device of the embodiment, a chip-level semiconductor device is disposed in the pixel area, and the first, second, and third light emitting units (P1, P2, and P3) of the semiconductor device emit the first to third lights of R, G, and B. It may function as a third subpixel. Accordingly, there is no need to package the first to third light emitting units P1, P2, and P3 serving as the first to third subpixels through additional processes such as die-bonding and wire bonding. Accordingly, the area for performing wire bonding, etc. is removed, and the width between the first to third light emitting units P1, P2, and P3 of the semiconductor device may be reduced. That is, the pitch width of the subpixel and pixel area can be reduced, thereby improving the pixel density and resolution of the display device.

In particular, since the first electrode 150 and the second electrodes 160a, 160b, and 160c overlap the plurality of light emitting portions P1, P2, and P3 in the vertical direction, the semiconductor device of the embodiment can secure the above-described pad area. no need. Therefore, luminous efficiency is high, and as described above, the width between the first to third light emitting units (P1, P2, and P3) is reduced, thereby reducing the size of the semiconductor device.

Accordingly, the display device of the embodiment including the semiconductor device of the embodiment has SD (Standard Definition) resolution (760×480), HD (High definition) resolution (1180×720), and FHD (Full HD) resolution (1920× 1080), UH (Ultra HD) resolution (3480×2160), or UHD or higher resolution (e.g. 4K (K=1000), 8K, etc.).

Moreover, the display device of the embodiment can be applied to an electronic signboard or TV with a diagonal size of 100 inches or more. This is because, as described above, the semiconductor device according to the embodiment functions as each pixel, has low power consumption, and can have a long lifespan with low maintenance costs.

Although the above description focuses on examples, this is only an example and does not limit the present invention, and those skilled in the art will understand that the examples are as follows without departing from the essential characteristics of the present example. You will see that various variations and applications are possible. For example, each component specifically shown in the examples can be modified and implemented. And these variations and differences in application should be construed as being included in the scope of the present invention as defined in the appended claims.

1A, 1B, 1C, 1D, 1E, 1F, 1G: Semiconductor devices
110a, 110b, 110c: first conductive semiconductor layer
120: active layer
130a, 130b, 130c: second conductive semiconductor layer
140: first insulating layer
141: second insulating layer
150: first bump electrode
160: second bump electrode

Claims (15)

a plurality of light emitting units;
a wavelength conversion layer disposed on the plurality of light emitting units;
a color filter layer disposed on the wavelength conversion layer; and
It includes a first intermediate layer disposed between the wavelength conversion layer and the color filter layer,
At least one light emitting unit among the plurality of light emitting units is arranged in different sizes,
Each of the plurality of light emitting units,
It includes a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer,
The width of the first conductive semiconductor layer toward the wavelength conversion layer continuously decreases,
The wavelength conversion layer includes a plurality of wavelength conversion layers respectively disposed on the plurality of light emitting units,
The width of the plurality of wavelength conversion layers is smaller than the width of the first conductive semiconductor layer on which each wavelength conversion layer is disposed,
The color filter layer includes a plurality of color filters respectively disposed on the plurality of wavelength conversion layers,
A semiconductor device wherein the first intermediate layer includes oxide or nitride.
According to paragraph 1,
A semiconductor device wherein the wavelength conversion layer includes a silicone resin, and the color filter includes an acrylic resin.
According to paragraph 1,
The first intermediate layer is a semiconductor device having a light transmittance of 70% or more.
According to paragraph 1,
A semiconductor device wherein the first intermediate layer has a thickness of 5 nm to 1,000 nm.
According to paragraph 1,
The first intermediate layer is made of indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (IGZO), and indium gallium tin oxide (IGTO). , AZO (aluminum zinc oxide), ATO (antimony tin oxide), GZO (gallium zinc oxide), IZON (IZO Nitride), AGZO (Al-Ga ZnO), IGZO (In-Ga ZnO), ZnO, IrOx, RuOx, A semiconductor device containing at least one of NiO, RuOx/ITO, ZnO, SiO ₂ , SixOy, Si ₃ N ₄ , SixNy, SiOxNy, Al ₂ O ₃ , TiO ₂ , and AlN.
According to paragraph 1,
The color filter layer is a semiconductor device including a black matrix disposed between the plurality of color filters.
According to paragraph 1,
A semiconductor device comprising a second intermediate layer disposed between the first intermediate layer and the wavelength conversion layer.
In clause 7,
The second intermediate layer is a semiconductor device including a resin of the same series as the wavelength conversion layer.
In clause 7,
A semiconductor device wherein the second intermediate layer has a thickness of 3,000 nm to 20,000 nm.
delete According to paragraph 1,
a first bump electrode commonly connected to the first conductive semiconductor layer of the plurality of light emitting units; and
A semiconductor device comprising a plurality of second bump electrodes each electrically connected to the second conductive semiconductor layer of the plurality of light emitting units.
According to clause 11,
It includes a first electrode electrically connecting the first conductivity type semiconductor layer of the plurality of light emitting units,
The first bump electrode is a semiconductor device electrically connected to the first electrode.
According to paragraph 1,
a plurality of first bump electrodes each connected to the first conductive semiconductor layer of the plurality of light emitting units; and
A semiconductor device comprising a second bump electrode commonly connected to the second conductive semiconductor layer of the plurality of light emitting units.
According to clause 13,
It includes a second electrode electrically connecting the second conductivity type semiconductor layer of the plurality of light emitting units,
The second bump electrode is a semiconductor device electrically connected to the second electrode.
A panel including a plurality of pixel areas defined by intersections of a plurality of common wires and a plurality of driving wires; and
Including a semiconductor element disposed in the pixel area,
The semiconductor device is,
a plurality of light emitting units;
a wavelength conversion layer disposed on the plurality of light emitting units;
a color filter layer disposed on the wavelength conversion layer; and
At least one light emitting unit among the plurality of light emitting units is arranged in different sizes,
Each of the plurality of light emitting units,
It includes a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer,
The width of the first conductive semiconductor layer toward the wavelength conversion layer continuously decreases,
It includes a first intermediate layer disposed between the wavelength conversion layer and the color filter layer,
The wavelength conversion layer includes a plurality of wavelength conversion layers respectively disposed on the plurality of light emitting units,
The width of the plurality of wavelength conversion layers is smaller than the width of the first conductive semiconductor layer on which each wavelength conversion layer is disposed,
The color filter layer includes a plurality of color filters respectively disposed on the plurality of wavelength conversion layers,
A display device wherein the first intermediate layer includes oxide or nitride.

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