KR102626801B1 - Substrate processing apparatus, substrate processing method, and storage medium - Google Patents

Abstract

The heat treatment unit includes a hot plate that arranges the wafer and applies heat to the wafer, a heater that heats the hot plate, a plurality of temperature sensors provided in response to a plurality of channels of the hot plate to measure the temperature of the hot plate, and a controller. Provided, the controller calculates, for each of the plurality of channels, a temperature shift amount that is the difference between the displayed temperature of the temperature sensor and the ideal temperature according to the heater setting, and determines whether this temperature shift amount is within a predetermined band width; If there is a channel whose temperature shift amount is not within the band width, it is configured to specify this channel as an abnormal area.

Description

Substrate processing apparatus, substrate processing method, and storage medium

The present disclosure relates to a substrate processing apparatus, a substrate processing method, and a storage medium.

In heat processing in which heat is applied to a substrate using a hot plate, it becomes important to maintain the temperature of the hot plate at a specified target temperature. For example, in the technology described in Patent Document 1, a temperature sensor is provided to detect the temperature of a heating member (equivalent to the above-described hot plate), and the occurrence of a problem is detected by detecting an abnormal temperature of the heating member with this temperature sensor. I'm doing it.

Japanese Patent Publication No. 2017-65126

As a configuration for performing heat treatment, for example, a configuration in which a heat plate is heated by a temperature controller for each of a plurality of channels (regions) to provide heat to the substrate is assumed. In this configuration, when a temperature abnormality is detected by a temperature sensor, it is not possible to specify in which channel (region) of the hot plate the temperature abnormality is occurring due to a defect.

The present disclosure has been made in consideration of the above-mentioned circumstances, and when a temperature abnormality occurs during heat treatment, the purpose is to specify with high precision the problem area causing the temperature abnormality.

A substrate processing apparatus according to one aspect of the present disclosure is provided with a hot plate for placing a substrate and applying heat to the substrate, a temperature controller for heating the hot plate, and a plurality of regions of the hot plate to measure the temperature of the hot plate. It is provided with a plurality of temperature sensors and a control unit, and the control unit calculates a temperature shift amount that is the difference between the measured temperature of the temperature sensor and the ideal temperature according to the setting of the thermostat for each of the plurality of areas, and the temperature shift amount is determined. It is configured to determine whether it is within a normal range and to specify an abnormal area based on the judgment result.

In the substrate processing apparatus according to one aspect of the present disclosure, temperature sensors are provided corresponding to a plurality of regions of the hot plate. Then, for each of the plurality of areas, it is determined whether the temperature shift amount, which is the difference between the measured temperature and the abnormal temperature, is within the normal range, and the abnormal area is specified based on the determination result. In this way, a temperature sensor is provided for each of the plurality of areas, it is determined whether the temperature shift amount is within the normal range for each of the plurality of areas, and the determination result is used to specify the abnormal area, thereby determining the temperature situation in each of the plurality of areas ( The abnormal area can be specified by taking into account (whether or not a temperature abnormality occurs, etc.). By considering the temperature situation of each area, for example, compared to the case where only one temperature sensor is used in total, the abnormal area causing the temperature abnormality (problem occurrence area) can be specified with high precision. That is, according to the substrate processing apparatus of the present disclosure, when a temperature abnormality occurs during heat treatment, the problem area causing the temperature abnormality can be specified with high precision.

The control unit may specify the abnormal area by considering both the temperature shift amount in the area where the temperature shift amount is not within the normal range and the temperature shift amount in the area where the temperature shift amount is within the normal range. For example, assume that the measured temperature of one of two areas is higher than the measured temperature of the other area, and it is determined that the temperature shift amount for only one area is not within the normal range. In this case, for example, it is estimated that the actual temperature in one of the two areas is lower than normal. Assuming that the actual temperature in the above-mentioned other area (area where the temperature shift amount is determined to be within the normal range) is lowered, the temperature shift amount of the other area is within the normal range, and the heat influence of the other area is Since control by the temperature controller is appropriately performed so that the temperature shift amount of one area is within the normal range and does not exceed the It is assumed that there is no case. Therefore, it is assumed that there is no case where the actual temperature is lowered in the other area. On the other hand, if the actual temperature is lowered in one area (an area where the temperature shift amount is determined to be not within the normal range), control is performed by the temperature controller to lower the temperature of the one area according to the measured temperature of the one area. Even if this is done (for example, when the output of the temperature controller corresponding to one area is set to zero), the actual temperature increases due to the thermal influence of the other area, and the measured temperature also increases according to the amount of the increase. There may be cases where the temperature shift amount is not within the normal range. Therefore, in the case where the actual temperature is lowered, if the temperature shift amount in one area is determined to be not within the normal range and the temperature shift amount in the other area is determined to be within the normal range, the actual temperature is lowered in one area. Therefore, one area can be specified as an abnormal area. In this way, by considering the temperature shift amount of the area where the temperature shift amount is not within the normal range and the temperature shift amount of the area where the temperature shift amount is within the normal range, the abnormal area can be appropriately specified.

The control unit may specify the abnormal area by considering the output amount of the thermostat corresponding to each of the plurality of areas. For example, when temperature control is performed on an abnormal area, the influence of the temperature control may extend to areas other than the abnormal area, and the temperature shift amount in areas other than the abnormal area may be outside the normal range. In cases where the temperature shift amount is outside the normal range for areas other than the abnormal area, the abnormal area cannot be arbitrarily specified only from the temperature shift amount. Here, the output amount of the thermostat changes depending on the actual temperature of the hot plate. For this reason, by the control unit specifying the abnormal area in consideration of the output amount of the temperature controller, the area in which the actual temperature changes significantly (i.e., the abnormal area) can be appropriately specified. In other words, by specifying the abnormal area in consideration of the output amount, the area where the temperature abnormality is occurring can be specified with greater precision.

If there is an area in a plurality of areas where the difference between the output amount and the normal state is more than a predetermined value, the control unit specifies the area as an abnormal area, and if it does not exist, the temperature shift amount is not within the normal range. The area may be specified as an abnormal area.

For example, a case in which the measured temperature of the temperature sensor deviates from the actual temperature of the heating plate due to problems with the temperature sensor, etc., where the measured temperature becomes higher than the actual temperature (measured temperature rise case), and a case where the measured temperature is higher than the actual temperature. A case where the temperature decreases (measurement temperature decrease case) is assumed. In the case where the measured temperature rises, the settings of the temperature conditioner are changed (changed in the direction of lowering the temperature) based on the measured temperature, and the measured temperature and the actual temperature of the area (measured temperature rise area) corresponding to the temperature conditioner decrease. It will happen. And, as the effect of the actual temperature drop in the measured temperature rise area extends to other areas, the measured and actual temperatures of other areas also decrease slightly (to a smaller extent than the measured temperature rise area). In this way, in the measurement temperature increase case, the measurement temperature becomes higher in the measurement temperature increase region than in other regions, and the actual temperature decreases, thereby reducing the output amount. In the case where the measured temperature rises, the actual temperature is lowered and the output amount is reduced in both the measured temperature increased area and other areas, so there is no area in the plurality of areas where the difference in output amount from the normal time is large. In addition, the area where the measured temperature rises, which may become an abnormal area because the actual temperature is lower than other areas, has a higher measured temperature than other areas, so the amount of temperature shift is large. From the above, in a case where there is no area where the difference in output amount from the normal state is large, the area where the temperature abnormality is occurring can be specified with high precision by specifying the area where the temperature shift amount is large (not within the normal range) as the abnormal area. You can. Additionally, in the case of a decrease in measured temperature, if the setting of the temperature conditioner is changed (changed in the direction of raising the temperature) based on the measured temperature, the measured temperature and the actual temperature of the area (measured temperature decrease area) to which the temperature conditioner corresponds will rise. do. And, as the influence of the actual temperature rise in the measured temperature drop area extends to other areas, the measured and actual temperatures of other areas also rise slightly (to a smaller extent than the measured temperature drop area). In this way, in the measurement temperature decrease case, the measurement temperature in the measurement temperature decrease region is lower than in other regions, and the actual temperature increases, thereby increasing the output amount. In the measurement temperature drop case, the output amount of the measurement temperature drop area, which can become an abnormal area, becomes particularly large compared to other areas. And, the measured temperature in other areas is higher than the measured temperature drop area (that is, the amount of temperature shift is large). From the above, when there is an area where the difference in output amount is large, the area in which the temperature abnormality occurs is specified with high precision by specifying the area where the difference in output amount from the normal state is large, rather than the area where the temperature shift amount is large, as the abnormal area. can do.

After the temperature of the hot plate becomes normal, the control unit may start determining whether the temperature shift amount is within the normal range. As a result, the temperature shift amount is not determined in transient periods such as during temperature increase control when the output amount applied to the hot plate from the temperature controller is intentionally changed, and the abnormality is limited to the period (steady state period) during which identification of the abnormality area is required. Processing can be performed according to the specification of the area.

The control unit may set the normal range to be wider than the range that can vary as the difference between the measured temperature and the abnormal temperature in the normal state of the hot plate operating normally. As a result, it is possible to prevent the temperature shift amount from being determined to be within the normal range in a state where the measured temperature fluctuates significantly during normal operation, such as when a substrate is loaded during operation of the device after reaching a steady state. . In other words, the above-described control can prevent normal processes from being interrupted.

The thermostat is configured to heat a plurality of areas according to a preset command temperature, and the control unit performs correction control so that the temperature shift amount of the abnormal area is within the normal range by changing the command temperature according to the abnormal area. It may be configured to run. By changing the command temperature set in the temperature controller, the amount of temperature shift in the abnormal area can be simply and appropriately corrected.

After changing the command temperature, the control unit controls the command temperature until a first state is reached in which the difference between the output amount of the temperature conditioner corresponding to the abnormal area and the output amount of the temperature conditioner corresponding to the normal command temperature is less than a predetermined value. You may repeat the change. For example, if the measured temperature of the partially cut temperature sensor deviates from the actual temperature of the hot plate, it is assumed that the measured temperature of the temperature sensor is inaccurate. Even in this case, by repeating the process of determining whether the output amount corresponding to the actual temperature is normal and changing the command temperature if it is not normal, the temperature error is determined regardless of the accuracy of the temperature measured by the temperature sensor. can be corrected.

After entering the first state, the control unit may determine whether or not subsequent processing can be continued based on the measured temperature of the abnormal region. After the temperature abnormality has been corrected in the first state (i.e., the actual temperature is correct), processing continues using the temperature sensor by determining whether the temperature measured by the temperature sensor in the area that was the abnormal area is accurate. It is possible to appropriately determine whether something is possible.

The control unit may continuously determine whether the temperature shift amount is within the normal range while the temperature of the hot plate is in a normal state. Since the abnormal area is continuously detected during the normal state, a dedicated operation for detecting the abnormal area becomes unnecessary, and the abnormal area can be detected without affecting the normal device operation recipe.

A substrate processing method according to an aspect of the present disclosure calculates a temperature shift amount that is the difference between the measured temperature of a plurality of regions of a hot plate that applies heat to the substrate and the ideal temperature of the plurality of regions, and the temperature shift amount is calculated. It includes a process of determining whether it is within a specified normal range and a process of specifying an abnormal area based on the determination result.

In the process of specifying an abnormal area, the abnormal area may be specified by considering both the temperature shift amount of the area where the temperature shift amount is not within the normal range and the temperature shift amount of the area where the temperature shift amount is within the normal range.

In the process of specifying the abnormal area, the abnormal area may be specified by considering the output amount of the temperature conditioner corresponding to each of the plurality of areas.

In the process of specifying an abnormal area, if there is an area in a plurality of areas where the difference between the output amount and the normal state is more than a predetermined value, the area is specified as an abnormal area, and if it does not exist, the temperature shift amount is normal. An area that is not within the range may be specified as an abnormal area.

After the temperature of the hot plate reaches a steady state, the determination process may be started.

The determination process may be performed by setting the normal range to be wider than the range that can fluctuate as the difference between the measured temperature and the abnormal temperature in the normal state of the hot plate operating normally.

The substrate processing method may further include a step of performing correction control so that the temperature shift amount of the abnormal region is within a normal range by changing the command temperature of the temperature controller that heats the hot plate.

In the process of performing correction control, after changing the command temperature, when the difference between the output amount of the temperature conditioner corresponding to the abnormal area and the output amount of the temperature conditioner corresponding to the normal command temperature enters a first state smaller than a predetermined value. Up to this point, you may repeat changing the command temperature.

In the process of performing correction control, after the first state is reached, it may be determined whether or not subsequent processing can be continued based on the measured temperature of the abnormal region.

While the temperature of the hot plate is in a steady state, the judgment process may be continuously performed.

A computer-readable medium according to one aspect of the present disclosure stores a program for causing a device to execute the above-described substrate processing method.

According to the substrate processing apparatus, substrate processing method, and storage medium according to the present disclosure, when a temperature abnormality occurs during heat treatment, the problem area causing the temperature abnormality can be specified with high precision.

1 is a perspective view showing the schematic configuration of a substrate processing system.
FIG. 2 is a cross-sectional view taken along line II-II in FIG. 1.
FIG. 3 is a cross-sectional view taken along line III-III in FIG. 2.
4 is a schematic longitudinal cross-sectional view showing an example of a heat treatment unit.
Figure 5 is a schematic diagram showing the arrangement of a temperature sensor in a hot plate.
Figure 6 is a diagram explaining the temperature shift mechanism.
Figure 7 is a graph showing the temperature shift amount and output amount for each channel.
Figure 8 is a hardware configuration diagram of the controller.
9 is a flowchart of substrate processing.
10 is a flowchart of correction control.

Hereinafter, embodiments will be described in detail with reference to the drawings. In the description, identical elements or elements with the same function are given the same symbol and redundant descriptions are omitted.

[Substrate processing system]

The substrate processing system 1 is a system that forms a photosensitive film on a substrate, exposes the photosensitive film, and develops the photosensitive film. The substrate to be processed is, for example, a semiconductor wafer W. The photosensitive film is, for example, a resist film.

The substrate processing system 1 includes a coating and developing device 2 and an exposure device 3. The exposure apparatus 3 performs exposure processing of the resist film formed on the wafer W. Specifically, energy lines are irradiated to the exposure target portion of the resist film by a method such as liquid immersion exposure. The coating/developing device 2 performs a process of forming a resist film on the surface of the wafer W before the exposure process by the exposure apparatus 3, and develops the resist film after the exposure process.

<Applicator/Developer>

Hereinafter, the configuration of the coating/developing device 2 will be described as an example of a substrate processing device. 1 to 3, the coating and developing device 2 includes a carrier block 4, a processing block 5, an interface block 6, and a controller 100.

The carrier block 4 introduces the wafer W into the coating and developing device 2 and unloads the wafer W from the coating and developing device 2. For example, the carrier block 4 can support a plurality of carriers 11 for wafers W, and has a built-in transfer arm A1. The carrier 11 accommodates a plurality of circular wafers W, for example. The transfer arm A1 takes out the wafer W from the carrier 11 and delivers it to the processing block 5, and receives the wafer W from the processing block 5 and returns it to the carrier 11.

The processing block 5 has a plurality of processing modules 14, 15, 16, and 17. 2 and 3, the processing modules 14, 15, 16, and 17 include a plurality of liquid processing units U1, a plurality of heat processing units U2, and a wafer W using these units. It has a built-in transfer arm (A3) for transfer. The processing module 17 further includes a direct transfer arm A6 that transfers the wafer W without passing through the liquid processing unit U1 and the heat processing unit U2. The liquid processing unit U1 applies the processing liquid to the surface of the wafer W. The heat treatment unit U2 has, for example, a hot plate and a cooling plate built in. The wafer W is heated by the hot plate, and the heated wafer W is cooled by the cold plate to perform heat treatment.

The processing module 14 forms an underlayer film on the surface of the wafer W using the liquid processing unit U1 and the heat processing unit U2. The liquid processing unit U1 of the processing module 14 applies a processing liquid for forming an underlayer film onto the wafer W. The heat treatment unit U2 of the processing module 14 performs various heat treatments accompanying the formation of the underlayer film.

The processing module 15 forms a resist film on the underlayer film using the liquid processing unit U1 and the heat processing unit U2. The liquid processing unit U1 of the processing module 15 applies a processing liquid (coating liquid) for forming a resist film onto the underlayer film. The heat processing unit U2 of the processing module 15 performs various heat treatments accompanying the formation of the resist film. Details about the liquid processing unit U1 of the processing module 15 will be described later.

The processing module 16 forms an upper layer film on the resist film using the liquid processing unit U1 and the heat processing unit U2. The liquid processing unit U1 of the processing module 16 applies a processing liquid for forming an upper layer film onto the resist film. The heat treatment unit U2 of the processing module 16 performs various heat treatments accompanying the formation of the upper layer film.

The processing module 17 performs development processing on the resist film after exposure using the liquid processing unit U1 and the heat processing unit U2. The liquid processing unit (U1) of the processing module 17 applies a processing liquid (developer) for development on the surface of the exposed wafer (W) and then washes it with a processing liquid (rinse liquid) for cleaning. By doing so, development of the resist film is performed. The heat processing unit U2 of the processing module 17 performs various heat treatments accompanying development processing. Specific examples of heat treatment include heat treatment before development (PEB: Post Exposure Bake), heat treatment after development (PB: Post Bake), and the like.

A shelf unit U10 is provided on the carrier block 4 side in the processing block 5. The shelf unit U10 is divided into a plurality of cells arranged in the vertical direction. A lifting arm A7 is provided near the shelf unit U10. The lifting arm A7 elevates the wafer W between cells of the shelf unit U10. A shelf unit U11 is provided on the interface block 6 side of the processing block 5. The shelf unit U11 is divided into a plurality of cells arranged in the vertical direction.

The interface block 6 transfers the wafer W to and from the exposure apparatus 3 . For example, the interface block 6 has a built-in transfer arm A8 and is connected to the exposure device 3. The transfer arm A8 transfers the wafer W placed on the shelf unit U11 to the exposure apparatus 3, receives the wafer W from the exposure apparatus 3, and returns it to the shelf unit U11.

The controller 100 controls the coating/developing device 2 to perform coating/development processing in the following order, for example.

First, the controller 100 controls the transfer arm A1 to transfer the wafer W in the carrier 11 to the shelf unit U10, and places the wafer W in the cell for the processing module 14. Control the lifting arm (A7) to do so.

Next, the controller 100 controls the transfer arm A3 to transfer the wafer W of the shelf unit U10 to the liquid processing unit U1 and the heat processing unit U2 in the processing module 14, The liquid processing unit U1 and the heat processing unit U2 are controlled to form an underlayer film on the surface of the wafer W. Thereafter, the controller 100 controls the transfer arm A3 to return the wafer W on which the lower layer film is formed to the shelf unit U10, and places the wafer W in the cell for the processing module 15. Controls the lifting arm (A7).

Next, the controller 100 controls the transfer arm A3 to transfer the wafer W of the shelf unit U10 to the liquid processing unit U1 and the heat processing unit U2 in the processing module 15, The liquid processing unit U1 and the heat processing unit U2 are controlled to form a resist film on the underlayer film of the wafer W. Thereafter, the controller 100 controls the transfer arm A3 to return the wafer W to the shelf unit U10, and the lifting arm A3 to place the wafer W in the cell for the processing module 16. A7) is controlled.

Next, the controller 100 controls the transfer arm A3 to transfer the wafer W of the shelf unit U10 to each unit in the processing module 16, and applies an upper layer film on the resist film of the wafer W. The liquid processing unit (U1) and the heat processing unit (U2) are controlled to form Thereafter, the controller 100 controls the transfer arm A3 to return the wafer W to the shelf unit U10, and the lifting arm A3 to place the wafer W in the cell for the processing module 17. A7) is controlled.

Next, the controller 100 directly controls the transfer arm A6 to transfer the wafer W of the shelf unit U10 to the shelf unit U11 and sends the wafer W to the exposure apparatus 3. Controls the delivery arm (A8). Thereafter, the controller 100 controls the transfer arm A8 to receive the exposed wafer W from the exposure device 3 and return it to the shelf unit U11.

Next, the controller 100 controls the transfer arm A3 to transfer the wafer W of the shelf unit U11 to each unit in the processing module 17, and develops the resist film of the wafer W. The liquid processing unit (U1) and the heat processing unit (U2) are controlled to carry out the operation. Thereafter, the controller 100 controls the transfer arm A3 to return the wafer W to the shelf unit U10, and the lifting arm A7 and transfer to return the wafer W to the carrier 11. Controls arm (A1). This completes the application and development process.

In addition, the specific configuration of the substrate processing device is not limited to the configuration of the coating/developing device 2 illustrated above. The substrate processing apparatus may be any type as long as it is provided with a liquid processing unit U1 for forming a film (liquid processing unit U1 of the processing modules 14, 15, and 16) and a controller 100 capable of controlling it.

<Heat treatment unit>

Next, the heat processing unit U2 of the processing module 15 will be described in detail. As shown in FIG. 4, the heat processing unit U2 has a housing 90, a heating mechanism 30, a temperature adjustment mechanism 50, and a controller 100 (control unit).

The housing 90 is a processing container that accommodates the heating mechanism 30 and the temperature adjustment mechanism 50. An inlet 91 for the wafer W is opened in the side wall of the housing 90. Additionally, the housing 90 is provided with a bottom plate 92 that divides the housing 90 into an upper area and a lower area, which are movement areas of the wafer W.

The heating mechanism 30 is configured to heat-process the wafer W. The heating mechanism 30 includes a support base 31, a top plate portion 32, a lifting mechanism 33, a hot plate 34, a support pin 35, a lifting mechanism 36, and an exhaust duct 37. ), a heater 38 (temperature conditioner), and a temperature sensor 39 (specifically, a plurality of temperature sensors 39a to 39g (see FIG. 5)).

The support 31 is a member having a cylindrical shape with a concave portion formed in the center. The support 31 supports the hot plate 34. The top plate portion 32 is a disk-shaped member with a diameter approximately the same as that of the support 31. The top plate portion 32 is supported on the ceiling portion of the housing 90, for example, and faces the support stand 31 with a gap between them. An exhaust duct 37 is connected to the upper part of the top plate portion 32. The exhaust duct 37 exhausts the chamber.

The lifting mechanism 33 is configured to raise and lower the top plate portion 32 under the control of the controller 100. When the top plate portion 32 is raised by the lifting mechanism 33, the chamber, which is a space for heat processing of the wafer W, is opened, and when the top plate portion 32 is lowered, the chamber is closed.

The hot plate 34 is a flat plate having a circular shape (see FIG. 5) and is fitted into a concave portion of the support stand 31. The hot plate 34 places the wafer W and provides heat to the wafer W. The hot plate 34 is heated by the heater 38. The hot plate 34 is heated by a heater 38 for each of the plurality of channels (regions). Inside the hot plate 34, a plurality of temperature sensors 39a to 39g (see FIG. 5) configured to measure the temperature of the hot plate 34 are provided for each of the plurality of channels described above.

The heater 38 is a temperature controller that heats the hot plate 34. The heater 38 is made of, for example, a resistance heating element. The heater 38 is configured to heat a plurality of channels of the hot plate 34 according to the command temperature set by the controller 100. That is, the heater 38 has a command temperature set for each of the plurality of channels. The command temperature of each channel can be individually changed by the controller 100. The heater 38 heats the hot plate 34 with an output amount according to the actual temperature of the hot plate 34.

The plurality of temperature sensors 39a to 39g are each provided in one-to-one correspondence with a plurality of channels (regions) of the hot plate 34, and measure the temperature of the hot plate 34 in the corresponding channel. The plurality of temperature sensors 39a to 39g may be provided inside the hot plate 34 or may be provided on the lower surface of the hot plate 34. FIG. 5 is a diagram schematically showing an example of the arrangement of a plurality of temperature sensors 39a to 39g on the hot plate 34. In the example shown in FIG. 5, a temperature sensor 39a is provided near the center of the circular hot plate 34, and four temperature sensors 39d are provided at approximately equal intervals in the circumferential direction near the outer edge of the hot plate 34. , 39e, 39f, 39g) are provided, and a temperature sensor 39b is provided between the temperature sensor 39a and the temperature sensor 39d in the radial direction, and the temperature sensor 39a in the radial direction and A temperature sensor 39c is provided between the temperature sensor 39f.

The support pin 35 is a member that extends to penetrate the support stand 31 and the hot plate 34 and supports the wafer W from below. The support pins 35 move up and down to place the wafer W at a predetermined position. The support pins 35 are configured to transfer the wafer W between the temperature adjustment plate 51 and the temperature control plate 51 that transports the wafer W. For example, three support pins 35 are provided at equal intervals in the circumferential direction. The lifting mechanism 36 is configured to raise and lower the support pin 35 under the control of the controller 100.

The temperature adjustment mechanism 50 transfers (transfers) the wafer W between the hot plate 34 and the external transfer arm A3 (see FIG. 3), and adjusts the temperature of the wafer W to a predetermined temperature. It is a configuration that is adjusted by . The temperature adjustment mechanism 50 has a temperature adjustment plate 51 and a connection bracket 52.

The temperature adjustment plate 51 is a plate that adjusts the temperature of the placed wafer W. In detail, the wafer W heated by the hot plate 34 is placed and the wafer W is cooled to a predetermined temperature. It is a plate that does. The temperature adjustment plate 51 is, for example, made of a metal with high thermal conductivity, such as aluminum, silver, or copper, and may be made of the same material from the viewpoint of preventing deformation due to heat. A cooling passage (not shown) for distributing cooling water and/or cooling gas is formed inside the temperature adjustment plate 51.

The connection bracket 52 is connected to the temperature adjustment plate 51 and is driven by a drive mechanism 53 controlled by the controller 100 to move within the housing 90. More specifically, the connection bracket 52 is movable along a guide rail (not shown) extending from the entrance 91 of the housing 90 to the vicinity of the heating mechanism 30. By moving the connection bracket 52 along a guide rail (not shown), the temperature adjustment plate 51 can move from the inlet 91 to the heating mechanism 30. The connection bracket 52 is made of, for example, a metal with high thermal conductivity such as aluminum, silver, or copper.

The controller 100 determines the difference between the displayed temperature of the temperature sensor 39 (measured temperature measured by the temperature sensor 39) and the ideal temperature according to the setting of the heater 38 for each of the plurality of channels of the hot plate 34. Calculating the temperature shift amount, determining whether this temperature shift amount is within a specified normal range, and specifying an abnormal area based on the judgment result (for example, if there is a channel where the temperature shift amount is not within the normal range) In this case, the channel is configured to specify this channel as an abnormal channel. The controller 100 specifies the abnormal area by considering both the temperature shift amount in the area where the temperature shift amount is not within the normal range and the temperature shift amount in the area where the temperature shift amount is within the normal range.

The controller 100 specifies an abnormal channel by considering the output amount of the heater 38 corresponding to each of the plurality of channels. If there is a channel in a plurality of channels where the difference between the output amount and the normal state is more than a predetermined value, the controller 100 specifies this channel as an abnormal channel, and if it does not exist, the temperature shift amount is not within the normal range. The channel is specified as an abnormal channel.

After the temperature of the hot plate 34 becomes normal, the controller 100 starts determining whether the temperature shift amount is within the normal range. The controller 100 continuously determines whether the temperature shift amount is within the above-described normal range while the temperature of the hot plate 34 is in a normal state.

The controller 100 sets the above-mentioned normal range to be wider than the range that can vary as the difference between the temperature displayed by the temperature sensor 39 and the above-mentioned abnormal temperature in the normal state of the hot plate 34 operating normally. Set it.

The controller 100 is further configured to perform correction control so that the temperature shift amount of the abnormal channel is within the normal range by changing the command temperature of the heater 38 according to the abnormal channel. The controller 100 is in a first state in which, after changing the command temperature, the difference between the output amount of the heater 38 according to the abnormal channel and the output amount of the heater 38 corresponding to the command temperature in normal time is less than a predetermined value. Repeat changing the command temperature until . After entering the first state, the controller 100 determines whether or not subsequent processing can be continued based on the temperature displayed by the temperature sensor 39 in the abnormal channel.

As shown in FIG. 4, the controller 100 has a conveyance control unit 101, a determination unit 102, an abnormal channel specification unit 103, and a correction unit 104 as function modules.

The transport control unit 101 controls the lifting mechanism 33 so that the chamber is opened and closed by raising and lowering the top plate part 32. In addition, the transfer control unit 101 controls the lifting mechanism 36 so that the wafer W is transferred between the temperature adjustment plate 51 and the support pins 35 by raising and lowering the support pins 35. do. Additionally, the transport control unit 101 controls the drive mechanism 53 so that the temperature adjustment plate 51 moves within the housing 90.

The determination unit 102 calculates a temperature shift amount that is the difference between the displayed temperature of the temperature sensor 39 and the ideal temperature according to the setting of the heater 38 for each of the plurality of channels of the hot plate 34, and this temperature shift amount is Determine whether it is within a specified normal range (hereinafter referred to as 'band width'). The determination unit 102 acquires display temperatures from the plurality of temperature sensors 39a to 39g at predetermined time intervals. The abnormal temperature according to the setting of the heater 38 is a temperature assumed as the temperature of the hot plate 34 (temperature of the hot plate 34 in a normal state) according to the command temperature set in advance in the heater 38. The determination unit 102 determines the above-described band width within a range (e.g. For example, set it wider than the range that can change by opening and closing the chamber.

After the temperature of the hot plate 34 becomes normal, the determination unit 102 starts determining whether the temperature shift amount is within the band width. That is, the determination unit 102 does not determine the temperature shift amount during the transition period during temperature increase control and during temperature decrease control when the amount of output applied to the hot plate 34 intentionally changes at the start of the process, but the hot plate (34) The judgment begins after the temperature in 34) becomes normal. The determination unit 102 continuously determines whether the temperature shift amount is within the band width while the temperature of the hot plate 34 is in a steady state.

If a channel whose temperature shift amount is not within the band width exists, the abnormal channel specification unit 103 specifies this channel as an abnormal channel. Additionally, the abnormal channel specification unit 103 specifies the abnormal channel by considering the output amount of the heater 38 corresponding to each of the plurality of channels. In this way, the abnormal channel specification unit 103 specifies the abnormal channel in consideration of the temperature shift amount and the output amount of the heater 38.

Specifically, if there is a channel in a plurality of channels in which the difference between the output amount of the heater 38 and the normal state is more than a predetermined value, the abnormal channel specification unit 103 specifies this channel as an abnormal channel ( Specific Process 2): If it does not exist, the channel whose temperature shift amount is not within the band width is specified as an abnormal channel (Specification Process 1).

An example of a temperature shift mechanism when performing the above-described specific processing 1 will be described with reference to (a) of FIG. 6. In (a) of FIG. 6, the display temperature (measured temperature measured by the temperature sensor 39a corresponding to CH1 and measurement temperature measured by the temperature sensor 39b corresponding to CH2) is shown for the two channels (CH1 and CH2), respectively. temperature) and the actual temperature are shown, with the vertical axis showing temperature and the horizontal axis showing time. Figure 6(a) shows the steady state (ST1), the first rising state (ST2), and the second rising state (ST3) over time.

In the steady state (ST1) shown in Fig. 6(a), the displayed temperature and actual temperature of both channels are around 400°C. From this state, for example, if a partial break occurs in the temperature sensor 39a and the resistance value of the temperature sensor 39a increases, the displayed temperature of CH1 deviates from the actual temperature and becomes around 430°C, and the displayed temperature of CH1 The rising first state (ST2) occurs in which only the temperature rises. In this case, since the command temperature corresponding to CH1 in the heater 38 is changed in a direction to reduce the temperature of CH1 by the increase, the rising second state (ST3) in which the displayed temperature and actual temperature of CH1 are lowered. do. However, since the temperature of CH2 adjacent to CH1 has an influence, in the second rising state (ST3), the display temperature of CH1 does not decrease to the original 400°C. Additionally, in the second rising state (ST3), the effect of the decrease in the actual temperature of CH1 also affects CH2, and the displayed temperature and actual temperature of CH2 also decrease slightly (to a smaller extent than that of CH1).

In the rising second state (ST3), compared to the steady state (ST1), since the actual temperature of both CH1 and CH2 is lowered, there is no channel in which the output amount of the heater 38 that changes according to the actual temperature is particularly large. . Additionally, in the second rising state (ST3), the displayed temperature of CH1 is increasing (i.e., the amount of temperature shift is increasing), and the actual temperature is greatly reduced (i.e., it is an abnormal channel). From the above, if there is no channel in which the difference between the output amount and the normal state is more than a specified value, the abnormal channel can be appropriately specified by performing specification process 1 and specifying the channel whose temperature shift amount is not within the band width as the abnormal channel. there is.

An example of a temperature shift mechanism when performing the above-described specific processing 2 will be described with reference to (b) of FIG. 6. In Figure 6 (b), the display temperature (measured temperature measured by the temperature sensor 39a corresponding to CH1 and measurement temperature measured by the temperature sensor 39b corresponding to CH2) for the two channels (CH1 and CH2), respectively temperature) and the actual temperature are shown, with the vertical axis showing temperature and the horizontal axis showing time. In Figure 6(b), over time, the normal state (ST101) (state shown on the left), the first degraded state (ST102) (state shown in the middle), and the second degraded state (ST103) (shown on the right). status).

In the normal state (ST101) shown in Figure 6(b), the displayed temperature and actual temperature of both channels are around 400°C. From this state, when the resistance value of the temperature sensor 39a decreases, the displayed temperature of CH1 deviates from the actual temperature to around 370°C, and the first lowered state (ST102) in which only the displayed temperature of CH1 decreases. In this case, since the command temperature corresponding to CH1 in the heater 38 is changed in a direction to increase the temperature of CH1 by the amount of the decrease, the lowered second state (ST103) in which the displayed temperature and actual temperature of CH1 increase. do. However, because the temperature of CH2 adjacent to CH1 has an influence, in the second lowered state (ST103), the display temperature of CH1 does not rise to the original 400°C. Additionally, in the second lowering state (ST103), the influence of the increase in the actual temperature of CH1 also affects CH2, and the displayed temperature and actual temperature of CH2 also increase slightly (to a smaller extent than that of CH1).

In the second reduced state (ST103), compared to the normal state (ST1), the actual temperature of CH1 increases significantly (it becomes an abnormal channel), and the output amount of the heater 38 corresponding to CH1 is particularly large. Additionally, in the second lowered state (ST103), the display temperature of CH2 is higher than the display temperature of CH1 (that is, the temperature shift amount of CH2 is large). From the above, if there is a channel where the difference between the output amount and the normal state is more than a specified value, specific processing 2 is performed and the channel with a large output amount other than the channel with a large temperature shift amount is specified as an abnormal channel, thereby appropriately specifying the abnormal channel. can do.

Specification of an abnormal channel when performing specific processing 1 and specific processing 2 will be explained with reference to FIG. 7. The seven channels (CH1 to CH7) shown in FIG. 7 correspond to CH1 to CH7 shown in FIG. 5. That is, the temperature sensors 39 corresponding to CH1 to CH7 shown in FIG. 7 are temperature sensors 39a to 39g shown in FIG. 5, respectively. 'CH1 operation' shown in FIG. 7 refers to raising or lowering the actual temperature of CH1. 'CH2 manipulation' and 'CH4 manipulation' similarly refer to raising or lowering the actual temperature of CH2 (or CH4).

Figure 7 shows nine graphs (g1 to g9). Graphs (g1) to Graphs (g3) show the amount of temperature shift of each channel when the actual temperature of each channel is changed. In detail, the graph (g1) shows the amount of temperature shift in each channel when the actual temperature of CH1 is increased by 20℃ and when the actual temperature of CH1 is lowered by 20℃, and the graph (g2) shows the amount of temperature shift in each channel when the actual temperature of CH2 is increased by 20℃. The graph (g3) shows the amount of temperature shift in each channel when the actual temperature of CH4 is increased by 20°C and when it is lowered by 20°C. In addition, graphs g4 to g6 show the output amount of each channel (output amount of the heater 38) when the actual temperature of each channel is changed, and the output amount of each channel under normal conditions when the actual temperature is not changed. It indicates the output amount. In detail, the graph (g4) shows the output amount of each channel when the actual temperature of CH1 is raised by 20℃ and when it is lowered by 20℃, and the output amount when normal, and the graph (g5) shows the actual temperature of CH2 by 20℃. It shows the output amount of each channel when ℃ is raised and ℃ lowered by 20℃, and the output amount when normal, and the graph (g6) shows the output amount of each channel when the actual temperature of CH4 is increased by 20℃ and lowered by 20℃. and the output amount under normal conditions. Additionally, graphs g7 to g9 show the output difference of each channel when the actual temperature of each channel is changed (output difference from the normal time when the temperature is not changed). In detail, the graph (g7) shows the output difference when the actual temperature of CH1 is increased by 20℃ and when the actual temperature of CH1 is decreased by 20℃, and the graph (g8) shows the output difference when the actual temperature of CH2 is increased by 20℃ and when the actual temperature of CH2 is increased by 20℃ and 20℃. It shows the output difference when it is lowered, and graph (g9) shows the output difference when the actual temperature of CH4 is increased by 20°C and when it is lowered by 20°C.

As shown in the graphs (g1 to g3) of FIG. 7, when the actual temperature is lowered by 20°C (indicated as '20°C' in the graphs (g1 to g3)), the actual temperature is changed to become an ideal channel. The amount of temperature shift in the channel is large. In the example shown in Fig. 7, for example, by setting the band width to 1.5°C, only abnormal channels where the temperature is actually changing can be extracted. On the other hand, as shown in the graphs (g1 to g3) of FIG. 7, when the actual temperature is increased by 20°C (indicated as '-20°C' in the graphs (g1 to g3)), the channel that changed the actual temperature The amount of temperature shift other than this is large. For example, in the graph g1, the temperature shift amounts of CH2 and CH3 near CH1 (see Fig. 5) are large. From this point, it can be said that there are cases where an abnormal channel cannot be identified solely from the amount of temperature shift.

As shown in the graphs (g4 to g6) of FIG. 7, when the actual temperature is increased by 20°C (in the case where it appears as '-20°C' in the graphs (g4 to g9)), the actual temperature is changed to an abnormal channel. The output volume of one channel is increased. In this case, as shown in the graphs (g7 to g9) in FIG. 7, the difference in output amount from the normal time changes as the actual temperature changes, and the channel that is considered an abnormal channel becomes larger. In the example shown in FIG. 7, for example, the determined value for determining whether the difference between the output amount and the normal value is more than a predetermined value is set to about 20% of the output amount, and only the abnormal channels in which the temperature is actually changing are extracted. This can be done (see graphs (g7 to g9) in FIG. 7).

From the above, if there is a channel in a plurality of channels where the difference between the output amount and the normal state is more than a specified value, the abnormal channel specification unit 103 specifies this channel as an abnormal channel (specification process 2). , if it does not exist, the abnormal channel can be specified with high precision by specifying the channel whose temperature shift amount is not within the band width as an abnormal channel (specification process 1).

The correction unit 104 performs correction control so that the temperature shift amount of the abnormal channel falls within the normal range by changing the command temperature of the heater 38 according to the abnormal channel. Specifically, the correction unit 104 acquires the temperature of the hot plate 34 from the temperature sensor 39 of the channel specified as an abnormal channel by the abnormal channel specification unit 103, and changes the temperature in the direction of improving the temperature abnormality. Change the command temperature of the heater 38 to do so. After changing the command temperature described above, the correction unit 104 determines that the difference between the output amount of the heater 38 according to the abnormal channel and the output amount of the heater 38 corresponding to the command temperature in normal times is less than a predetermined value. Repeat changing the command temperature until it reaches state 1. After reaching the above-described first state, the correction unit 104 determines whether or not subsequent processing can be continued based on the temperature displayed by the temperature sensor 39 in the abnormal channel. Specifically, the correction unit 104 continues the subsequent processing if the display temperature acquired from the temperature sensor 39 of the abnormal channel is close to the abnormal temperature of the channel, and if it is not close to the abnormal temperature of the channel, the correction unit 104 continues the subsequent processing. Stop. Even though the first state has been reached (the output volume has become normal, the actual temperature has been corrected correctly and has become close to the ideal temperature), the displayed temperature of the temperature sensor 39 is said to be deviated from the ideal temperature, that is, the temperature sensor 39 Since it indicates that it cannot operate normally, further processing may be stopped.

The controller 100 is comprised of one or more control computers. For example, the controller 100 has a circuit 120 shown in FIG. 8. The circuit 120 includes one or more processors 121, memory 122, storage 123, input/output port 124, and timer 125.

The input/output port 124 inputs and outputs electric signals between the lifting mechanisms 33 and 36, the driving mechanism 53, the temperature sensor 39, and the heater 38. The timer 125 measures elapsed time by, for example, counting reference pulses of a certain period. The storage 123 has a recording medium that can be read by a computer, such as a hard disk. The recording medium records a program for executing the substrate processing sequence described later. The recording medium may be a removable medium such as a non-volatile semiconductor memory, magnetic disk, or optical disk. The memory 122 temporarily records the program loaded from the recording medium of the storage 123 and the results of calculations by the processor 121. The processor 121 cooperates with the memory 122 to execute the program, thereby configuring each functional module described above.

Additionally, the hardware configuration of the controller 100 is not necessarily limited to configuring each function module by program. For example, each function module of the controller 100 may be configured by a dedicated logic circuit or an ASIC (Application Specific Integrated Circuit) integrating the logic circuit.

[Substrate processing sequence]

Next, as an example of a substrate processing method, a substrate processing sequence performed by the heat processing unit U2 under control of the controller 100 will be described with reference to FIG. 9 . The sequence of substrate processing shown in FIG. 9 is performed in parallel with other substrate processing, and is performed continuously while the temperature of the hot plate 34 is in a steady state.

In the processing shown in Fig. 9, step S1 is first executed. In step S1, the controller 100 determines whether a channel with an abnormal display temperature (an abnormal channel) exists. Specifically, the controller 100 calculates a temperature shift amount, which is the difference between the displayed temperature of the temperature sensor 39 and the ideal temperature according to the setting of the heater 38, for each of the plurality of channels of the hot plate 34, and calculates this temperature It is determined whether the shift amount is within the specified band width, and if a channel that is not within the band width exists, it is determined that an abnormal channel exists.

Next, step S2 is executed. In step S2, the controller 100 determines whether a channel with a large increase in output volume exists. Specifically, the controller 100 determines whether a plurality of channels exist in which the difference between the output amount and the normal state is greater than or equal to a predetermined value. In step S2, if it is determined that a channel in which the difference between the output amount and the normal state is more than a predetermined value exists, step S3 is executed, and if it is determined that it does not exist, step S4 is executed.

In step S3, the controller 100 specifies a channel with a large increase in the output amount (the difference between the output amount and the normal state is more than a predetermined value) as an abnormal channel. In step S4, the controller 100 specifies a channel (temperature shift channel) for which the temperature shift amount is determined to be not within the band width as an abnormal channel.

Next, step S5 is executed. In step S5, the controller 100 executes correction control. The above is an example of the substrate processing sequence.

Next, step S5 (correction control) of the above-described substrate processing sequence will be described in detail with reference to FIG. 10. In the processing shown in Fig. 10, step S51 is first executed. In step S51, the controller 100 changes the command temperature of the heater 38 according to the abnormal channel. Specifically, the correction unit 104 acquires the temperature of the hot plate 34 from the temperature sensor 39 of the channel specified as an abnormal channel by the abnormal channel specification unit 103, and changes the temperature in the direction of improving the temperature abnormality. Change the command temperature of the heater 38 to do so.

Next, step S52 is executed. In step S52, the controller 100 determines whether a predetermined time has passed since the change in the command temperature in step S51 (waited for a predetermined stabilization time). If it is determined in step S52 that the predetermined time has elapsed, step S53 is executed, and if it is determined that it has not elapsed, step S52 is executed again.

In step S53, the controller 100 determines the output amount (current output amount) (MV) of the heater 38 according to the abnormal channel and the command temperature at normal time (i.e., the command temperature before the change in step S51). It is determined whether the difference with the output amount (normal output amount) (MV') of the heater 38 corresponding to ) is in a first state smaller than a predetermined value. If it is determined in step S53 that the first state has not been reached, the process in step S51 is executed again, and the command temperature is changed again. On the other hand, when it is determined in step S53 that the first state has been reached, step S54 is executed.

In step S54, the controller 100 determines whether the difference between the display temperature (PV) obtained from the temperature sensor 39 of the abnormal channel and the abnormal temperature (SV) of the channel is smaller than a predetermined value. If it is determined in step S54 that it is less than the predetermined value (i.e., the display temperature PV is close to the ideal temperature SV), the controller 100 determines normal processing and continues processing ( Step (S55)). On the other hand, if it is determined in step S54 that it is not less than the predetermined value, the controller 100 determines that the processing is abnormal and stops further processing (step S56). The above is an example of correction control processing.

[Action effect]

The heat treatment unit U2 includes a hot plate 34 that places the wafer W and applies heat to the wafer W, a heater 38 that heats the hot plate 34, and a plurality of hot plate 34 plates. A plurality of temperature sensors 39a to 39g are provided corresponding to the channels and measure the temperature of the hot plate 34, and a controller 100. The controller 100 controls the temperature sensor 39 for each of the plurality of channels. Calculating a temperature shift amount that is the difference between the displayed temperature and the ideal temperature according to the setting of the heater 38, determining whether this temperature shift amount is within a given band width, and specifying the abnormal area based on the determination result. (For example, if there is a channel in which the temperature shift amount is not within the band width, this channel is specified as an abnormal area).

In the heat treatment unit U2, a temperature sensor 39 is provided corresponding to a plurality of channels of the heat plate 34, respectively. Then, for each of the plurality of channels, it is determined whether the temperature shift amount, which is the difference between the display temperature and the ideal temperature, is within the band width, and the abnormal channel is specified based on this determination result. In this way, temperature sensors 39a to 39g are provided for each of the plurality of channels, and it is determined whether or not the temperature shift amount is within the band width for each of the plurality of channels. This determination result is used to specify an abnormal channel, so that in each of the plurality of channels The abnormal channel can be specified by considering the temperature situation (whether or not a temperature abnormality occurs). By considering the temperature situation of each channel, for example, compared to the case where only one temperature sensor is provided in total, the abnormal channel (problem occurrence area) causing the temperature abnormality can be specified with high precision.

The controller 100 may specify an abnormal channel by considering both the temperature shift amount of a channel whose temperature shift amount is not within the band width and the temperature shift amount of a channel whose temperature shift amount is within the band width. For example, assume that the display temperature of one of two channels is higher than the display temperature of the other channel, and it is determined that the temperature shift amount for only one channel is not within the band width. In this case, for example, it is assumed that the actual temperature in one of the two channels is lower than normal. Assuming that the actual temperature of the other channel (a channel for which the temperature shift amount is determined to be within the band width) is lowered as described above, the temperature shift amount of the other channel is within the band width, and the heat influence of the other channel is Since control by the heater 38 is appropriately performed so that the temperature shift amount of one channel is within the band width without excessively reaching It is assumed that there is no case of stability. Therefore, it is assumed that there is no case in which the actual temperature decreases in the other channel. On the other hand, if the actual temperature of one channel (a channel for which it is determined that the temperature shift amount is not within the band width) is lowered, the heater 38 is activated to lower the temperature of the one channel according to the displayed temperature of the one channel. Even when control is performed (for example, when the output of the heater 38 corresponding to one channel is set to zero), the actual temperature increases due to the influence of heat from the other channel, and is displayed according to the increase. The temperature may also rise, and there may be cases where the temperature shift amount is not within the band width. Therefore, in the case where the actual temperature decreases, if the temperature shift amount of one channel is determined to be not within the band width and the temperature shift amount of the other channel is determined to be within the band width, the actual temperature decreases in one channel. Therefore, this one channel can be identified as an abnormal channel. In this way, by considering the temperature shift amount of the channel whose temperature shift amount is not within the band width and the temperature shift amount of the channel whose temperature shift amount is within the band width, the abnormal channel can be appropriately specified.

The controller 100 specifies an abnormal channel by considering the output amount of the heater 38 corresponding to each of the plurality of channels. For example, when temperature control is performed on an abnormal channel, the influence of this temperature control may extend to areas other than the abnormal channel, and the temperature shift amount of channels other than the abnormal channel may be outside the band width. In cases where the temperature shift amount for a channel other than an abnormality is outside the band width, the abnormal channel cannot be arbitrarily specified based on the temperature shift amount alone. Here, the output amount of the heater 38 changes depending on the actual temperature of the hot plate 34. For this reason, the controller 100 can specify the abnormal channel in consideration of the output amount of the heater 38, thereby appropriately specifying the channel (i.e., the abnormal channel) whose actual temperature is significantly changing. In other words, by specifying the abnormal channel in consideration of the output amount, the channel in which the temperature abnormality is occurring can be specified with greater precision.

If there is a channel in a plurality of channels where the difference between the output amount and the normal state is more than a predetermined value, the controller 100 specifies this channel as an abnormal channel, and if it does not exist, the temperature shift amount is banded. A channel that is not within the width is specified as an abnormal channel.

For example, a case where the measured temperature of the temperature sensor 19 deviates from the actual temperature of the heating plate 34 due to a problem with the temperature sensor 19, etc., and the displayed temperature becomes higher than the actual temperature (display temperature rise case) ) and a case in which the display temperature becomes lower than the actual temperature (display temperature drop case) is assumed. In the display temperature increase case, the setting of the heater 38 is changed (changed in the direction of lowering the temperature) based on the display temperature, and the display temperature of the channel (display temperature increase channel) to which this heater 38 corresponds is changed. The actual temperature decreases. Also, the effect of the actual temperature decrease in the display temperature increase channel extends to other channels, so that the display temperature and actual temperature of the other channels also decrease slightly (to a smaller extent than that of the display temperature increase channel). In this way, in the display temperature increase case, the display temperature in the display temperature increase channel is higher than that of other channels, and the actual temperature decreases, thereby reducing the output amount. In the display temperature increase case, the actual temperature of both the display temperature increase channel and the other channels is lowered and the output amount is reduced, so there is no channel in a plurality of channels where the difference in output amount from the normal state is large. In addition, the display temperature rising channel, which may become an abnormal channel because its actual temperature is lower than other channels, has a higher display temperature than other channels, so the temperature shift amount is large. From the above, in a case where there is no channel with a large difference in output amount from the normal state, the channel in which a temperature abnormality is occurring can be identified with high precision by specifying a channel with a large temperature shift amount (not within the bandwidth) as an abnormal channel. You can. Additionally, in the display temperature drop case, when the setting of the heater 38 is changed (changed in the direction of raising the temperature) based on this display temperature, the display temperature of the channel (display temperature drop channel) to which this heater 38 corresponds is changed. The actual temperature rises. And, as the effect of the actual temperature increase in the display temperature decrease channel extends to other channels, the display temperature and actual temperature of the other channels also rise slightly (to a smaller extent than that of the display temperature decrease channel). In this way, in the display temperature drop case, the display temperature in the display temperature drop channel is lower than that of other channels, and the output amount increases as the actual temperature rises. In the display temperature drop case, the output amount of the display temperature drop channel, which may be an abnormal channel, becomes particularly large compared to other channels. Additionally, the display temperature of the other channels is higher than that of the channel where the display temperature decreases (i.e., the amount of temperature shift is large). From the above, when there is a channel with a large difference in output amount, the channel in which the temperature abnormality is occurring is identified with high precision by specifying the channel with a large difference in output amount from the normal state as an abnormal channel, rather than the channel with a large temperature shift amount. can do.

After the temperature of the hot plate 34 becomes normal, the controller 100 starts determining whether the temperature shift amount is within the normal range. As a result, in a transient period during temperature increase control in which the output amount applied from the heater 38 to the hot plate 34 is intentionally changed, the temperature shift amount is not determined, and the period during which the abnormal channel needs to be specified (steady state period) ), processing can be performed according to the specification of the abnormal channel.

The controller 100 sets the above-described normal range to a range that can vary as the difference between the displayed temperature of the temperature sensor 39 and the above-mentioned abnormal temperature in the normal state of the hot plate 34 operating normally. Set it wide. As a result, in a state in which the display temperature fluctuates significantly while in a normal operation state, for example, when the wafer W is loaded (when the chamber is opened) during device operation after reaching a steady state, the amount of temperature shift is banded. This can prevent it from being judged as not within the width. In other words, the above-described control can prevent normal processes from being interrupted.

The heater 38 is configured to heat a plurality of channels according to a preset command temperature, and the controller 100 changes the command temperature of the heater 38 according to the abnormal channel, so that the temperature shift amount of the abnormal channel is within the normal range. It is configured to further perform correction control so that I can do it. By changing the command temperature set for the heater 38, the temperature shift amount of the abnormal channel can be simply and appropriately corrected.

After changing the command temperature, the controller 100 is configured to set a first temperature range in which the difference between the output amount of the heater 38 according to the abnormal channel and the output amount of the heater 38 corresponding to the command temperature in normal time is less than a predetermined value. Repeat changing the command temperature until the condition is reached. For example, if the displayed temperature of the partially cut temperature sensor 19 deviates from the actual temperature of the hot plate 34, it is assumed that the displayed temperature of the temperature sensor 19 is not accurate. Even in this case, the accuracy of the displayed temperature of the temperature sensor 19 is affected by repeating the process of determining whether the output amount corresponding to the actual temperature is normal and changing the command temperature if it is not normal. Temperature abnormalities can be corrected without

After entering the first state, the controller 100 determines whether or not subsequent processing can be continued based on the temperature displayed by the temperature sensor 39 in the abnormal channel. After the temperature abnormality has been corrected in the first state (i.e., the actual temperature is correct), it is determined whether the displayed temperature of the temperature sensor 19 of the channel that was the abnormal channel is accurate, and the temperature sensor 19 You can use to properly determine whether it is possible to continue processing.

The controller 100 continuously determines whether the temperature shift amount is within the above-described normal range while the temperature of the hot plate 34 is in a normal state. Since abnormal channels are continuously detected during the normal state, a dedicated operation for detecting abnormal channels becomes unnecessary, and abnormal channels can be detected without affecting the normal device operation recipe.

Although the embodiments have been described above, the present disclosure is not limited to the above embodiments.

For example, an example of specifying an abnormal channel considering the output amount of the heater 38 has been described. However, in a case where an abnormal channel can always be specified only from the temperature shift amount, the temperature shift is determined regardless of the output amount of the heater 38. The abnormal channel may be specified only from the quantity.

delete

Claims (21)

A heating plate for placing the substrate and providing heat to the substrate,
A thermostat that heats the hot plate,
A plurality of temperature sensors provided in response to a plurality of areas of the hot plate to measure the temperature of the hot plate;
Equipped with a control unit,
The control unit,
For each of the plurality of areas, calculating a temperature shift amount that is a difference between a temperature measured by the temperature sensor and an ideal temperature according to a setting of the thermostat, and determining whether the temperature shift amount is within a predetermined normal range;
It is configured to specify an abnormal area based on the judgment result,
The control unit specifies the abnormal region by considering both the temperature shift amount in a region where the temperature shift amount is not within the normal range and the temperature shift amount in the region where the temperature shift amount is within the normal range. . delete According to claim 1,
The substrate processing apparatus, wherein the control unit specifies the abnormal area in consideration of the output amount of the temperature controller corresponding to each of the plurality of areas. A heating plate for placing the substrate and providing heat to the substrate,
A thermostat that heats the hot plate,
A plurality of temperature sensors provided in response to a plurality of areas of the hot plate to measure the temperature of the hot plate;
Equipped with a control unit,
The control unit,
For each of the plurality of areas, calculating a temperature shift amount that is a difference between a temperature measured by the temperature sensor and an ideal temperature according to a setting of the thermostat, and determining whether the temperature shift amount is within a predetermined normal range;
It is configured to specify an abnormal area based on the judgment result,
The control unit,
Considering the output amount of the thermostat corresponding to each of the plurality of areas, specifying the abnormal area,
If there is an area in the plurality of areas where the difference between the output amount and the normal state is more than a predetermined value, the area is specified as the abnormal area, and if it does not exist, the temperature shift amount is within the normal range. A substrate processing apparatus that specifies a non-normal area as the abnormal area. According to any one of claims 1, 3 and 4,
The substrate processing apparatus, wherein the control unit starts determining whether the temperature shift amount is within the normal range after the temperature of the hot plate becomes normal. A heating plate for placing the substrate and providing heat to the substrate,
A thermostat that heats the hot plate,
A plurality of temperature sensors provided in response to a plurality of areas of the hot plate to measure the temperature of the hot plate;
Equipped with a control unit,
The control unit,
For each of the plurality of areas, calculating a temperature shift amount that is a difference between a temperature measured by the temperature sensor and an ideal temperature according to a setting of the thermostat, and determining whether the temperature shift amount is within a predetermined normal range;
It is configured to specify an abnormal area based on the judgment result,
The control unit sets the normal range to be wider than a range that can vary as a difference between the measured temperature and the abnormal temperature in a normal state of the hot plate operating normally. According to any one of claims 1, 3, 4 and 6,
The thermostat is configured to heat the plurality of areas according to a preset command temperature,
The control unit,
The substrate processing apparatus is further configured to perform correction control so that the temperature shift amount of the abnormal area is within the normal range by changing the command temperature according to the abnormal area. According to claim 7,
The control unit may be in a first state where, after changing the command temperature, the difference between the output amount of the temperature conditioner according to the abnormal area and the output amount of the temperature conditioner corresponding to the command temperature in a normal state is less than a predetermined value. A substrate processing device that repeats changes in the command temperature until the temperature is reached. According to claim 8,
The substrate processing apparatus, wherein the control unit determines whether or not subsequent processing can be continued based on the measured temperature of the abnormal region after the first state is reached. According to any one of claims 1, 3, 4 and 6,
The substrate processing apparatus wherein the control unit continuously determines whether the temperature shift amount is within the normal range while the temperature of the hot plate is in a normal state. A step of calculating a temperature shift amount that is the difference between the measured temperature of a plurality of regions of the heat plate that applies heat to the substrate and the ideal temperature of the plurality of regions, and determining whether the temperature shift amount is within a predetermined normal range;
It includes a process of specifying an abnormal area based on the determination result,
In the step of specifying the abnormal area, the abnormal area is specified by considering both the temperature shift amount in the area where the temperature shift amount is not within the normal range and the temperature shift amount in the area where the temperature shift amount is within the normal range. A substrate processing method. delete According to claim 11,
In the step of specifying the abnormal area, the abnormal area is specified by taking into consideration the output amount of the temperature controller corresponding to each of the plurality of areas. A step of calculating a temperature shift amount that is the difference between the measured temperature of a plurality of regions of the heat plate that applies heat to the substrate and the ideal temperature of the plurality of regions, and determining whether the temperature shift amount is within a predetermined normal range;
It includes a process of specifying an abnormal area based on the determination result,
In the process of specifying the abnormal area,
Considering the output amount of the thermostat corresponding to each of the plurality of areas, specifying the abnormal area,
If there is an area in the plurality of areas where the difference between the output amount and the normal state is a predetermined value or more, the area is specified as the abnormal area, and if it does not exist, an area where the temperature shift amount is not within the normal range is designated. A substrate processing method that specifies the abnormal region. The method according to any one of claims 11, 13 and 14,
A substrate processing method, wherein the determining process is started after the temperature of the hot plate reaches a steady state. A step of calculating a temperature shift amount that is the difference between the measured temperature of a plurality of regions of the heat plate that applies heat to the substrate and the ideal temperature of the plurality of regions, and determining whether the temperature shift amount is within a predetermined normal range;
It includes a process of specifying an abnormal area based on the determination result,
A substrate processing method wherein the normal range is set to be wider than a range that can fluctuate as a difference between the measured temperature and the abnormal temperature in a normal state of the hot plate operating normally, and the determining process is performed. . The method according to any one of claims 11, 13, 14 and 16,
The substrate processing method further includes a step of performing correction control so that the temperature shift amount in the abnormal area is within the normal range by changing the command temperature of the temperature controller that heats the hot plate. According to claim 17,
In the step of performing the correction control, after changing the command temperature, the difference between the output amount of the temperature conditioner corresponding to the abnormal region and the output amount of the temperature conditioner corresponding to the command temperature in normal time is less than a predetermined value. A substrate processing method in which changing the command temperature is repeated until the state is reached. According to claim 18,
In the step of performing the correction control, after the first state is reached, whether or not subsequent processing can be continued is determined based on the measured temperature of the abnormal region. The method according to any one of claims 11, 13, 14 and 16,
A substrate processing method, wherein the determining process is continuously performed while the temperature of the hot plate is in a steady state. A computer-readable storage medium storing a program for causing a device to execute the substrate processing method according to any one of claims 11, 13, 14, and 16.

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