WO2019159704A1

WO2019159704A1 - Substrate processing device, substrate processing method, and storage medium

Info

Publication number: WO2019159704A1
Application number: PCT/JP2019/003476
Authority: WO
Inventors: 晋一朗三坂
Original assignee: 東京エレクトロン株式会社
Priority date: 2018-02-14
Filing date: 2019-01-31
Publication date: 2019-08-22
Also published as: CN111699544A; CN111699544B; KR102626801B1; JP6964176B2; TW201939639A; KR20200120699A; JPWO2019159704A1; TWI791752B

Abstract

According to the present invention, a heat treatment unit is provided with: a hot plate on which a wafer is placed and which applies heat to the wafer; a heater that heats the hot plate; a plurality of temperature sensors that are provided corresponding to a plurality of channels of the hot plate and that measure the temperature of the hot plate; and a controller. The controller is configured to: calculate, for each of the plurality of channels, a temperature shift amount which is the differences between a display temperature of the temperature sensor and the ideal temperature according to the settings of the heater, and determine whether the temperature shift amount is within a predetermined band width; and specify, as abnormal regions, the channels in which the temperature shift amount is not within the band width.

Description

Substrate processing apparatus, substrate processing method, and storage medium

The present disclosure relates to a substrate processing apparatus, a substrate processing method, and a storage medium.

In the heat treatment in which heat is applied to the substrate by the hot plate, it is important to maintain the temperature of the hot plate at a predetermined target temperature. For example, in the technique described in Patent Document 1, a temperature sensor that detects the temperature of a heating member (corresponding to the above-described hot plate) is provided, and a malfunction is detected by detecting a temperature abnormality of the heating member by the temperature sensor. Detected.

JP 2017-65126 A

As a configuration for performing heat treatment, for example, a configuration in which a hot plate is heated by a temperature controller for each of a plurality of channels (regions) to apply heat to the substrate can be considered. In such a configuration, when a temperature abnormality is detected by the temperature sensor, it cannot be specified which channel (region) of the heat plate causes the temperature abnormality due to a malfunction.

This disclosure has been made in view of the above circumstances, and an object of the present disclosure is to accurately identify an occurrence region of a defect causing a temperature abnormality when a temperature abnormality occurs in the heat treatment.

A substrate processing apparatus according to one embodiment of the present disclosure is provided corresponding to a plurality of regions of a hot plate that places a substrate and applies heat to the substrate, a temperature controller that heats the hot plate, and a hot plate. A plurality of temperature sensors for measuring the temperature of the hot plate, and a control unit, the control unit for each of a plurality of areas, the temperature sensor measured temperature and the ideal temperature according to the setting of the temperature controller It is configured to calculate a temperature shift amount that is a difference, determine whether the temperature shift amount is within a predetermined normal range, and specify an abnormal region based on the determination result Has been.

In the substrate processing apparatus according to one aspect of the present disclosure, temperature sensors are provided corresponding to a plurality of regions of the hot plate. Then, for each of the plurality of regions, it is determined whether or not the temperature shift amount that is the difference between the measured temperature and the ideal temperature is within the normal range, and the abnormal region is specified based on the result of the determination. Thus, a temperature sensor is provided for each of a plurality of regions, and it is determined whether or not the temperature shift amount is within a normal range for each of the plurality of regions, and the determination result is used to identify an abnormal region. An abnormal region can be identified in consideration of temperature conditions (such as whether or not a temperature abnormality has occurred) in each of the plurality of regions. By considering the temperature status of each area, for example, compared with the case where only one temperature sensor is used as a whole, the abnormal area causing the temperature abnormality (defect occurrence area) can be accurately identified. can do. In other words, according to the substrate processing apparatus of the present disclosure, when a temperature abnormality occurs in the heat treatment, it is possible to accurately specify the occurrence region of the defect causing the temperature abnormality.

The control unit may specify the abnormal region in consideration of both the temperature shift amount in the region where the temperature shift amount is not within the normal range and the temperature shift amount in the region where the temperature shift amount is within the normal range. For example, consider a case where the measured temperature of one of the two regions is higher than the measured temperature of the other region, and it is determined that the temperature shift amount is not within the normal range for only one region. In this case, for example, it is estimated that the actual temperature is lower than that in the normal state in one of the two regions. If the actual temperature is lowered in the above-mentioned other region (region where the temperature shift amount is determined to be within the normal range), the temperature shift amount of the other region is within the normal range, and the other region The above-mentioned state (one region) is not exerted excessively on one region, and control by the temperature controller is appropriately performed so that the temperature shift amount in one region is within the normal range. It is considered that the temperature shift amount is not stable in the normal range). Therefore, it is considered that the actual temperature does not decrease in the other region. On the other hand, if the actual temperature is reduced in one region (region in which the temperature shift amount is determined not to be within the normal range), the temperature in one region is decreased according to the measured temperature in one region. Even when the temperature controller is controlled as much as possible (when the output of the temperature controller corresponding to one region is set to zero, for example), the actual temperature is raised by the heat effect of the other region, and the temperature is raised. Accordingly, the measured temperature may rise correspondingly, and the state where the temperature shift amount is not within the normal range may be continued. Therefore, in the case where the actual temperature is lowered, it is determined that the temperature shift amount of one region is not within the normal range, and the temperature shift amount of the other region is determined to be within the normal range, In this region, the actual temperature is lowered, and this one region can be identified as an abnormal region. Thus, the abnormal region can be appropriately identified by considering the temperature shift amount of the region where the temperature shift amount is not within the normal range and the temperature shift amount of the region within the normal range.

The control unit may specify the abnormal region in consideration of the output amount of the temperature controller corresponding to each of the plurality of regions. For example, when temperature control is performed for an abnormal region, the temperature control affects the region other than the abnormal region, and the temperature shift amount in the region other than the abnormal region may be outside the normal range. When the temperature shift amount is outside the normal range for areas other than the abnormal area, the abnormal area cannot be uniquely identified from the temperature shift amount alone. Here, the output amount of the temperature controller changes according to the actual temperature of the hot plate. For this reason, when a control part considers the output amount of a temperature controller and specifies an abnormal area | region, the area | region (namely, abnormal area | region) where actual temperature is changing greatly can be specified appropriately. That is, by specifying the abnormal region in consideration of the output amount, it is possible to specify the region where the temperature abnormality has occurred more accurately.

The control unit identifies the region as an abnormal region when there is a region where the difference between the normal output amount and the normal value is greater than or equal to a predetermined value in a plurality of regions. An area whose amount is not within the normal range may be specified as an abnormal area.

For example, as a mode in which the measured temperature of the temperature sensor deviates from the actual temperature of the hot plate due to a malfunction related to the temperature sensor, the case where the measured temperature is higher than the actual temperature (measured temperature rising case) and the measured temperature is higher than the actual temperature. Is considered to be a low case (measurement temperature drop case). In the measured temperature rise case, the temperature controller settings are changed (changed in the direction of decreasing the temperature) based on the measured temperature, and the measured temperature and actual temperature in the corresponding region (measured temperature rising region) Will be reduced. Then, when the influence of the actual temperature drop in the measured temperature rise region extends to the other regions, the measured temperature and the actual temperature in the other regions are slightly lowered (with a smaller width than the measured temperature rise region). Thus, in the measured temperature rise case, the measured temperature is higher in the measured temperature rise region than in the other regions, and the output amount is reduced as the actual temperature is lowered. In the measured temperature rise case, the measured temperature rise area and other areas are areas where the actual temperature is low and the output amount is small, so the difference in the output amount from the normal time is large in multiple areas. Does not exist. The measured temperature rise region where the actual temperature is lower than the other regions and can become an abnormal region has a higher measured temperature and a larger temperature shift amount than the other regions. From the above, when there is no region where the difference in output amount from the normal time is large, by specifying a region with a large temperature shift amount (not within the normal range) as an abnormal region, a temperature abnormality occurs. Can be accurately identified. In the case where the measured temperature is lowered, if the temperature controller setting is changed (changed in the direction of increasing the temperature) based on the measured temperature, the measured temperature in the region (measured temperature lowered region) corresponding to the temperature controller is changed. And the actual temperature will rise. Then, when the influence of the actual temperature rise in the measurement temperature reduction region extends to other regions, the measurement temperature and the actual temperature in the other regions also slightly increase (with a width smaller than that of the measurement temperature reduction region). As described above, in the measurement temperature reduction case, the measurement temperature is lower in the measurement temperature reduction region than in the other regions, and the output amount is increased by increasing the actual temperature. In the measurement temperature reduction case, the output amount of the measurement temperature reduction region that can be an abnormal region protrudes and becomes larger than other regions. And the measured temperature of other area | region is higher than a measured temperature fall area | region (namely, the amount of temperature shifts is large). From the above, when there is a region where the difference in output amount is large, the region where the difference in output amount from the normal time is large is specified as the abnormal region instead of the region where the temperature shift amount is large. The generated area can be specified with high accuracy.

The controller may start determining whether or not the temperature shift amount is within a normal range after the temperature of the hot plate reaches a steady state. Thus, the temperature shift amount is not determined in a transition period or the like at the time of temperature rise control in which the amount of output applied from the temperature controller to the heat plate is intentionally changed, and a period in which an abnormal region needs to be identified ( The processing relating to the specification of the abnormal region can be performed only in the period of the steady state).

The control unit may set the normal range wider than the range that can vary as the difference between the measured temperature and the ideal temperature in the steady state of the hot plate operating normally. As a result, for example, when the substrate is carried in while the apparatus is operating after reaching the steady state, the temperature shift amount is determined not to be within the normal range in a state where the measurement temperature varies greatly while in the normal operating state. This can be prevented. That is, it is possible to prevent a normal process from being hindered by the control described above.

The temperature controller is configured to heat a plurality of regions in accordance with a preset command temperature, and the control unit changes the command temperature related to the abnormal region, thereby changing the temperature shift amount of the abnormal region. It may be configured to further execute correction control so that is within the normal range. By changing the command temperature set in the temperature controller, the temperature shift amount in the abnormal region can be corrected easily and appropriately.

After the change of the command temperature, the control unit is in a first state in which the difference between the output amount of the temperature controller related to the abnormal region and the output amount of the temperature controller corresponding to the normal command temperature is smaller than a predetermined value. Until then, the change of the command temperature may be repeated. For example, when the measured temperature of the temperature sensor that is half-broken is deviated from the actual temperature of the hot plate, the measured temperature of the temperature sensor may not be accurate. Even in such a case, it is determined whether or not the output amount corresponding to the actual temperature is normal, and if it is not normal, the process of changing the command temperature is repeated, so that the measured temperature of the temperature sensor The temperature abnormality can be corrected without depending on the accuracy of.

The control unit may determine whether or not to continue the subsequent processing based on the measured temperature in the abnormal region after the first state is reached. After the temperature abnormality is corrected in the first state (that is, the actual temperature is accurate), it is determined whether or not the measured temperature of the temperature sensor in the region that has become the abnormal region is accurate. It is possible to appropriately determine whether or not it is possible to continue processing using.

The control unit may continuously determine whether the temperature shift amount is within a normal range while the temperature of the hot plate is in a steady state. Since the abnormal area is continuously detected during the steady state, a dedicated operation for detecting the abnormal area becomes unnecessary, and the abnormal area is detected without affecting the normal device operation recipe. Can do.

A substrate processing method according to an aspect of the present disclosure calculates a temperature shift amount that is a difference between a measured temperature of a plurality of regions of a hot plate that applies heat to a substrate and an ideal temperature of the plurality of regions, and the temperature A step of determining whether or not the shift amount is within a predetermined normal range, and a step of specifying an abnormal region based on the determination result.

In the step of identifying the abnormal region, the abnormal region is identified in consideration of both the temperature shift amount of the region where the temperature shift amount is not within the normal range and the temperature shift amount of the region where the temperature shift amount is within the normal range. May be.

In the step of specifying the abnormal region, the abnormal region may be specified in consideration of the output amount of the temperature controller corresponding to each of the plurality of regions.

In the step of identifying an abnormal region, if there is a region where the difference between the output amount and the normal amount is a predetermined value or more in a plurality of regions, the region is identified as an abnormal region. A region where the temperature shift amount is not within the normal range may be specified as an abnormal region.

The step of determining may be started after the temperature of the hot plate reaches a steady state.

The determination process may be executed by setting the normal range wider than the range that can vary as the difference between the measured temperature and the ideal temperature in the steady state of the hot plate that operates normally.

The substrate processing method may further include a step of performing correction control so that the temperature shift amount in the abnormal region is within the normal range by changing the command temperature of the temperature controller that heats the hot plate.

In the step of performing the correction control, after the change of the command temperature, a difference between the output amount of the temperature controller related to the abnormal region and the output amount of the temperature controller corresponding to the normal command temperature is smaller than a predetermined value. You may repeat change of command temperature until it will be in a state.

In the step of performing the correction control, it may be determined whether or not the subsequent processing can be continued based on the measured temperature in the abnormal region after the first state is reached.

While the temperature of the hot plate is in a steady state, a step of continuously determining may be executed.

The computer-readable medium according to an aspect of the present disclosure stores a program for causing the apparatus to execute the substrate processing method described above.

According to the substrate processing apparatus, the substrate processing method, and the storage medium according to the present disclosure, when a temperature abnormality occurs in the heat treatment, it is possible to accurately identify the occurrence region of the defect that causes the temperature abnormality. .

It is a perspective view which shows schematic structure of a substrate processing system. FIG. 2 is a cross-sectional view taken along line II-II in FIG. FIG. 3 is a sectional view taken along line III-III in FIG. 2. It is a schematic longitudinal cross-sectional view which shows an example of the heat processing unit. It is a schematic diagram which shows arrangement | positioning of the temperature sensor in a hot platen. It is a figure explaining a temperature shift mechanism. It is a graph which shows the temperature shift amount and output amount for every channel. It is a hardware block diagram of a controller. It is a flowchart of a substrate process. It is a flowchart of correction control.

Hereinafter, embodiments will be described in detail with reference to the drawings. In the description, the same elements or elements having the same functions are denoted by the same reference numerals, and redundant description is omitted.

[Substrate processing system]
The substrate processing system 1 is a system for forming a photosensitive film, exposing the photosensitive film, and developing the photosensitive film on a substrate. The substrate to be processed is, for example, a semiconductor wafer W. The photosensitive film is, for example, a resist film.

The substrate processing system 1 includes a coating / developing device 2 and an exposure device 3. The exposure apparatus 3 performs an exposure process on the resist film formed on the wafer W. Specifically, the exposure target portion of the resist film is irradiated with energy rays by a method such as immersion exposure. The coating / developing apparatus 2 performs a process of forming a resist film on the surface of the wafer W before the exposure process by the exposure apparatus 3, and performs a development process of the resist film after the exposure process.

(Coating / developing equipment)
Hereinafter, the configuration of the coating / developing apparatus 2 will be described as an example of the substrate processing apparatus. As shown in FIGS. 1 to 3, the coating / developing apparatus 2 includes a carrier block 4, a processing block 5, an interface block 6, and a controller 100.

The carrier block 4 introduces the wafer W into the coating / developing apparatus 2 and derives the wafer W from the coating / developing apparatus 2. For example, the carrier block 4 can support a plurality of carriers 11 for the wafer W and incorporates a delivery arm A1. The carrier 11 accommodates a plurality of circular wafers W, for example. The delivery arm A <b> 1 takes out the wafer W from the carrier 11 and delivers it to the processing block 5, receives the wafer W from the processing block 5, and returns it into the carrier 11.

The processing block 5 has a plurality of

processing modules

14, 15, 16, and 17. As shown in FIGS. 2 and 3, the

processing modules

14, 15, 16, and 17 include a plurality of liquid processing units U1, a plurality of heat treatment units U2, and a transfer arm A3 that transfers the wafer W to these units. Built-in. The processing module 17 further includes a direct transfer arm A6 that transfers the wafer W without passing through the liquid processing unit U1 and the heat treatment unit U2. The liquid processing unit U1 applies the processing liquid to the surface of the wafer W. The heat treatment unit U2 includes, for example, a hot plate and a cooling plate, heats the wafer W with the hot plate, and cools the heated wafer W with the cooling plate to perform the heat treatment.

The processing module 14 forms a lower layer film on the surface of the wafer W by the liquid processing unit U1 and the heat treatment unit U2. The liquid processing unit U1 of the processing module 14 applies a processing liquid for forming a lower layer film on the wafer W. The heat treatment unit U2 of the processing module 14 performs various heat treatments associated with the formation of the lower layer film.

The processing module 15 forms a resist film on the lower layer film by the liquid processing unit U1 and the heat treatment unit U2. The liquid processing unit U1 of the processing module 15 applies a processing liquid (coating liquid) for forming a resist film on the lower layer film. The heat treatment unit U2 of the processing module 15 performs various heat treatments accompanying the formation of the resist film. Details of the liquid processing unit U1 of the processing module 15 will be described later.

The processing module 16 forms an upper layer film on the resist film by the liquid processing unit U1 and the heat treatment unit U2. The liquid processing unit U1 of the processing module 16 applies a processing liquid for forming an upper layer film on the resist film. The heat treatment unit U2 of the processing module 16 performs various heat treatments accompanying the formation of the upper layer film.

The processing module 17 develops the resist film after exposure by the liquid processing unit U1 and the heat treatment unit U2. The liquid processing unit U1 of the processing module 17 applies a developing processing liquid (developing liquid) on the exposed surface of the wafer W, and then rinses it with a cleaning processing liquid (rinsing liquid) to thereby remove the resist. The film is developed. The heat treatment unit U2 of the processing module 17 performs various heat treatments associated with the development processing. Specific examples of the heat treatment include heat treatment before development processing (PEB: Post Exposure Bake), heat treatment after development processing (PB: Post Bake), and the like.

A shelf unit U10 is provided on the carrier block 4 side in the processing block 5. The shelf unit U10 is partitioned into a plurality of cells arranged in the vertical direction. An elevating arm A7 is provided in the vicinity of the shelf unit U10. The raising / lowering arm A7 raises / lowers the wafer W between the cells of the shelf unit U10. A shelf unit U11 is provided on the interface block 6 side in the processing block 5. The shelf unit U11 is partitioned into a plurality of cells arranged in the vertical direction.

The interface block 6 delivers the wafer W to and from the exposure apparatus 3. For example, the interface block 6 includes a delivery arm A8 and is connected to the exposure apparatus 3. The delivery arm A8 delivers the wafer W arranged on the shelf unit U11 to the exposure apparatus 3, receives the wafer W from the exposure apparatus 3, and returns it to the shelf unit U11.

The controller 100 controls the coating / developing apparatus 2 so as to execute the coating / developing process in the following procedure, for example.

First, the controller 100 controls the transfer arm A1 so as to transfer the wafer W in the carrier 11 to the shelf unit U10, and controls the lift arm A7 so as to place this wafer W in the cell for the processing module 14.

Next, the controller 100 controls the transfer arm A3 so as to transfer the wafer W of the shelf unit U10 to the liquid processing unit U1 and the heat treatment unit U2 in the processing module 14, and forms a lower layer film on the surface of the wafer W. Thus, the liquid processing unit U1 and the heat treatment unit U2 are controlled. Thereafter, the controller 100 controls the transfer arm A3 so as to return the wafer W on which the lower layer film is formed to the shelf unit U10, and controls the lifting arm A7 so as to place the wafer W in the cell for the processing module 15.

Next, the controller 100 controls the transfer arm A3 so as to transfer the wafer W of the shelf unit U10 to the liquid processing unit U1 and the heat treatment unit U2 in the processing module 15, and forms a resist film on the lower layer film of the wafer W. Thus, the liquid processing unit U1 and the heat treatment unit U2 are controlled. Thereafter, the controller 100 controls the transfer arm A3 so as to return the wafer W to the shelf unit U10, and controls the lift arm A7 so as to place the wafer W in the cell for the processing module 16.

Next, the controller 100 controls the transfer arm A3 so as to transfer the wafer W of the shelf unit U10 to each unit in the processing module 16, and the liquid processing unit so as to form an upper layer film on the resist film of the wafer W. U1 and heat treatment unit U2 are controlled. Thereafter, the controller 100 controls the transfer arm A3 so as to return the wafer W to the shelf unit U10, and controls the lifting arm A7 so as to place the wafer W in the cell for the processing module 17.

Next, the controller 100 directly controls the transfer arm A6 so as to transfer the wafer W of the shelf unit U10 to the shelf unit U11, and controls the transfer arm A8 so as to send this wafer W to the exposure apparatus 3. Thereafter, the controller 100 controls the transfer arm A8 so that the wafer W subjected to the exposure process is received from the exposure apparatus 3 and returned to the shelf unit U11.

Next, the controller 100 controls the transfer arm A3 so as to transfer the wafer W of the shelf unit U11 to each unit in the processing module 17, and the liquid processing unit U1 and the processing unit U1 and the resist film of the wafer W are subjected to development processing. The heat treatment unit U2 is controlled. Thereafter, the controller 100 controls the transfer arm A3 to return the wafer W to the shelf unit U10, and controls the lift arm A7 and the delivery arm A1 to return the wafer W into the carrier 11. Thus, the coating / developing process is completed.

The specific configuration of the substrate processing apparatus is not limited to the configuration of the coating / developing apparatus 2 exemplified above. Any substrate processing apparatus may be used as long as it includes a liquid processing unit U1 for forming a film (liquid processing unit U1 of the

processing modules

14, 15, and 16) and a controller 100 that can control the unit. Good.

[Heat treatment unit]
Next, the heat treatment unit U2 of the processing module 15 will be described in detail. As shown in FIG. 4, the heat treatment unit U2 includes a housing 90, a heating mechanism 30, a temperature adjustment mechanism 50, and a controller 100 (control unit).

The housing 90 is a processing container that houses the heating mechanism 30 and the temperature adjustment mechanism 50. An entrance 91 for the wafer W is opened on the side wall of the housing 90. In addition, a floor plate 92 that divides the inside of the housing 90 into an upper region that is a movement region of the wafer W and a lower region is provided in the housing 90.

The heating mechanism 30 is configured to heat the wafer W. The heating mechanism 30 includes a support base 31, a top plate portion 32, a lifting mechanism 33, a heating plate 34, a support pin 35, a lifting mechanism 36, an exhaust duct 37, a heater 38 (temperature controller), And a temperature sensor 39 (specifically, a plurality of temperature sensors 39a to 39g (see FIG. 5)).

The support base 31 is a member having a cylindrical shape in which a concave portion is formed in the central portion. The support base 31 supports the heat plate 34. The top plate portion 32 is a disk-like member having a diameter similar to that of the support base 31. The top plate portion 32 faces the support base 31 with a gap in a state where the top plate portion 32 is supported by, for example, the ceiling portion of the housing 90. An exhaust duct 37 is connected to the top of the top plate portion 32. The exhaust duct 37 exhausts the inside of the chamber.

The elevating mechanism 33 is configured to elevate and lower the top plate portion 32 according to the control of the controller 100. When the top plate portion 32 is raised by the elevating mechanism 33, the chamber, which is a space for performing the heat treatment of the wafer W, is opened, and when the top plate portion 32 is lowered, the chamber is closed. It becomes.

The hot plate 34 is a flat plate having a circular shape (see FIG. 5), and is fitted in the recess of the support base 31. The hot plate 34 places the wafer W thereon and applies heat to the wafer W. The hot plate 34 is heated by a heater 38. The hot plate 34 is heated by a heater 38 for each of a plurality of channels (regions). Inside the hot plate 34, a plurality of temperature sensors 39a to 39g (see FIG. 5) configured to measure the temperature of the hot plate 34 are provided for each of the plurality of channels described above.

The heater 38 is a temperature controller that heats the hot plate 34. The heater 38 is composed of a resistance heating element, for example. The heater 38 is configured to heat a plurality of channels of the hot plate 34 according to the command temperature set by the controller 100. That is, the heater 38 is set with a command temperature for each of a plurality of channels. The command temperature of each channel can be individually changed by the controller 100. The heater 38 heats the hot plate 34 with an output amount corresponding to the actual temperature of the hot plate 34.

The plurality of temperature sensors 39a to 39g are provided in one-to-one correspondence with the plurality of channels (regions) of the hot plate 34, and measure the temperature of the hot plate 34 in the corresponding channel. The plurality of temperature sensors 39a to 39g may be provided inside the hot plate 34 or may be provided on the lower surface of the hot plate 34. FIG. 5 is a diagram schematically showing an example of the arrangement of the plurality of temperature sensors 39a to 39g on the hot plate. In the example shown in FIG. 5, a temperature sensor 39a is provided in the vicinity of the center of the circular hot plate 34, and four

temperature sensors

39d, 39e, 39f are provided at substantially equal intervals in the circumferential direction near the outer edge of the hot plate 34. 39g, a temperature sensor 39b is provided between the temperature sensor 39a and the temperature sensor 39d in the radial direction, and a temperature sensor 39c is provided between the temperature sensor 39a and the temperature sensor 39f in the radial direction. It has been.

The support pins 35 are members that extend through the support base 31 and the hot plate 34 and support the wafer W from below. The support pins 35 are moved up and down to place the wafer W at a predetermined position. The support pins 35 are configured to deliver the wafer W to and from the temperature adjustment plate 51 that transports the wafer W. For example, three support pins 35 are provided at equal intervals in the circumferential direction. The elevating mechanism 36 is configured to raise and lower the support pin 35 in accordance with the control of the controller 100.

The temperature adjusting mechanism 50 is configured to deliver (carry) the wafer W between the hot plate 34 and the external transfer arm A3 (see FIG. 3) and adjust the temperature of the wafer W to a predetermined temperature. The temperature adjustment mechanism 50 includes a temperature adjustment plate 51 and a connection bracket 52.

The temperature adjustment plate 51 is a plate for adjusting the temperature of the mounted wafer W. Specifically, the temperature adjustment plate 51 is a plate for mounting the wafer W heated by the hot plate 34 and cooling the wafer W to a predetermined temperature. . The temperature adjustment plate 51 is made of, for example, a metal having a high thermal conductivity, such as aluminum, silver, or copper, and may be made of the same material from the viewpoint of preventing deformation due to heat. Inside the temperature adjustment plate 51, a cooling flow path (not shown) for flowing cooling water and / or cooling gas is formed.

The connection bracket 52 is connected to the temperature adjustment plate 51 and is driven by the drive mechanism 53 controlled by the controller 100 to move in the housing 90. More specifically, the connection bracket 52 is movable along a guide rail (not shown) extending from the carry-in port 91 of the housing 90 to the vicinity of the heating mechanism 30. The temperature adjustment plate 51 can be moved from the carry-in port 91 to the heating mechanism 30 by the connection bracket 52 moving along a guide rail (not shown). The connection bracket 52 is made of, for example, a metal having a high thermal conductivity such as aluminum, silver, or copper.

The controller 100 sets a temperature shift amount, which is a difference between the display temperature of the temperature sensor 39 (measured temperature measured by the temperature sensor 39) and the ideal temperature according to the setting of the heater 38, for each of the plurality of channels of the hot plate 34. Calculate and determine whether or not the temperature shift amount is within a predetermined normal range, and specify an abnormal region based on the determination result (for example, there is a channel whose temperature shift amount is not within the normal range) In such a case, the channel is identified as an abnormal channel). The controller 100 identifies the abnormal region in consideration of both the temperature shift amount in the region where the temperature shift amount is not within the normal range and the temperature shift amount in the region where the temperature shift amount is within the normal range.

The controller 100 identifies an abnormal channel in consideration of the output amount of the heater 38 corresponding to each of the plurality of channels. The controller 100 identifies the channel as an abnormal channel when there is a channel whose difference from the normal output amount is a predetermined value or more in a plurality of channels. A channel whose amount is not within the normal range is identified as an abnormal channel.

The controller 100 starts determining whether or not the temperature shift amount is within the normal range after the temperature of the hot plate 34 reaches a steady state. The controller 100 continuously determines whether or not the temperature shift amount is within the above-described normal range while the temperature of the hot plate 34 is in a steady state.

The controller 100 sets the above-described normal range wider than a range that can vary as a difference between the display temperature of the temperature sensor 39 and the above-described ideal temperature in the steady state of the hot plate 34 that operates normally.

The controller 100 is configured to further execute correction control so that the temperature shift amount of the abnormal channel falls within the normal range by changing the command temperature of the heater 38 related to the abnormal channel. After the change in the command temperature, the controller 100 is in a first state in which the difference between the output amount of the heater 38 related to the abnormal channel and the output amount of the heater 38 corresponding to the command temperature at the normal time is smaller than a predetermined value. Repeat until the command temperature is changed. After entering the first state, the controller 100 determines whether or not to continue the subsequent processing based on the display temperature of the temperature sensor 39 in the abnormal channel.

As shown in FIG. 4, the controller 100 includes a transport control unit 101, a determination unit 102, an abnormal channel identification unit 103, and a correction unit 104 as functional modules.

The transport control unit 101 controls the lifting mechanism 33 so that the chamber is opened and closed by lifting and lowering the top plate part 32. Further, the transfer control unit 101 controls the elevating mechanism 36 so that the wafer W is transferred between the temperature adjustment plate 51 and the support pins 35 by elevating the support pins 35. Further, the transport control unit 101 controls the drive mechanism 53 so that the temperature adjustment plate 51 moves in the housing 90.

The determination unit 102 calculates a temperature shift amount that is a difference between the display temperature of the temperature sensor 39 and the ideal temperature according to the setting of the heater 38 for each of the plurality of channels of the heat plate 34, and the temperature shift amount is predetermined. Is within a normal range (hereinafter referred to as “bandwidth”). The determination unit 102 acquires display temperatures from the plurality of temperature sensors 39a to 39g at predetermined time intervals. The ideal temperature according to the setting of the heater 38 is a temperature assumed as the temperature of the hot plate 34 (the temperature of the hot plate 34 in a normal state) according to the command temperature set in advance in the heater 38. The determination unit 102 can vary the above-described bandwidth as a difference between the display temperature of the temperature sensor 39 and the ideal temperature in the steady state of the hot plate 34 that is operating normally (for example, it can be varied by opening / closing the chamber). Set a wider range.

The determination unit 102 starts determining whether or not the temperature shift amount is within the bandwidth after the temperature of the hot plate 34 reaches a steady state. In other words, the determination unit 102 does not determine the temperature shift amount in the transition period or the temperature decrease control during the temperature increase control in which the output amount applied to the heat plate 34 is intentionally changed at the start of the process. The determination is started after the temperature of 34 reaches a steady state. The determination unit 102 continuously determines whether or not the temperature shift amount is within the bandwidth while the temperature of the hot plate 34 is in a steady state.

The abnormal channel specifying unit 103 specifies the channel as an abnormal channel when there is a channel whose temperature shift amount is not within the bandwidth. The abnormal channel specifying unit 103 specifies an abnormal channel in consideration of the output amount of the heater 38 corresponding to each of the plurality of channels. As described above, the abnormal channel specifying unit 103 specifies an abnormal channel in consideration of the temperature shift amount and the output amount of the heater 38.

Specifically, the abnormal channel specifying unit 103 sets the channel as an abnormal channel when a plurality of channels have a channel whose difference from the normal output amount of the heater 38 is a predetermined value or more. If specified (specific processing 2) and does not exist, a channel whose temperature shift amount is not within the bandwidth is specified as an abnormal channel (specific processing 1).

An example of a temperature shift mechanism when the above-described specific process 1 is performed will be described with reference to FIG. In FIG. 6A, the display temperature (measured temperature measured by the temperature sensor 39a corresponding to CH1 and measured temperature measured by the temperature sensor 39b corresponding to CH2) for each of the two channels (CH1, CH2). And the actual temperature are shown, with the vertical axis representing temperature and the horizontal axis representing time. FIG. 6A shows the normal state ST1, the rising first state ST2, and the rising second state ST3 along with the passage of time.

In the normal state ST1 shown in FIG. 6 (a), the display temperature and the actual temperature are about 400 ° C. for both channels. From this state, for example, when a half-break occurs in the temperature sensor 39a and the resistance value of the temperature sensor 39a increases, the display temperature of CH1 deviates from the actual temperature to around 430 ° C., and only the display temperature of CH1 rises. 1 state ST2. In such a case, since the command temperature corresponding to CH1 in the heater 38 is changed to a direction in which the temperature of CH1 is decreased by an increase, the second temperature state ST3 in which the display temperature and the actual temperature of CH1 are decreased is obtained. . However, since the temperature of CH2 adjacent to CH1 is affected, in the second rising state ST3, the display temperature of CH1 does not decrease to the original 400 ° C. Further, in the second rising state ST3, the effect of the actual temperature decrease of CH1 also affects CH2, and the display temperature and actual temperature of CH2 are slightly decreased (with a smaller width than CH1).

In the rising second state ST3, since the actual temperatures of both CH1 and CH2 are lower than in the normal state ST1, there is no channel in which the output amount of the heater 38 that changes according to the actual temperature protrudes and becomes large. In the second rising state ST3, the display temperature of CH1 is rising (that is, the amount of temperature shift is large), and the actual temperature is greatly decreasing (that is, it is an abnormal channel). From the above, when there is no channel whose difference from the normal output amount is greater than or equal to the predetermined value, the identification process 1 is performed, and the channel whose temperature shift amount is not within the bandwidth is identified as an abnormal channel. An abnormal channel can be identified appropriately.

An example of the temperature shift mechanism when performing the above-described specific processing 2 will be described with reference to FIG. In FIG. 6B, for each of the two channels (CH1, CH2), the display temperature (the measured temperature measured by the temperature sensor 39a corresponding to CH1 and the measured temperature measured by the temperature sensor 39b corresponding to CH2) is shown. And the actual temperature are shown, with the vertical axis representing temperature and the horizontal axis representing time. In FIG. 6B, as time passes, the normal state ST101 (state shown on the left), the lowered first state ST102 (the state shown in the middle), and the lowered second state ST103 (shown on the right) State).

In the normal state ST101 shown in FIG. 6 (b), the display temperature and the actual temperature are about 400 ° C. for both channels. From this state, when the resistance value of the temperature sensor 39a decreases, the display temperature of CH1 deviates from the actual temperature and becomes around 370 ° C., and a first state ST102 in which only the display temperature of CH1 decreases is reached. In such a case, since the command temperature corresponding to CH1 in the heater 38 is changed to a direction in which the temperature of CH1 is increased by a decrease, the second temperature state ST103 in which the display temperature and the actual temperature of CH1 are increased is obtained. . However, since the temperature of CH2 adjacent to CH1 is affected, in the lowered second state ST103, the display temperature of CH1 does not increase to the original 400 ° C. Further, in the second lowered state ST103, the effect of the actual temperature increase of CH1 also reaches CH2, and the display temperature and actual temperature of CH2 also slightly increase (with a smaller width than CH1).

In the lowered second state ST103, compared with the normal state ST1, the actual temperature of CH1 rises greatly (becomes an abnormal channel), and the output amount of the heater 38 corresponding to CH1 protrudes and becomes large. In the lowered second state ST103, the display temperature of CH2 is higher than the display temperature of CH1 (that is, the temperature shift amount of CH2 is large). From the above, if there is a channel whose difference from the normal output amount is greater than or equal to a predetermined value, the specific process 2 is performed, and the channel with a large output amount is set as an abnormal channel instead of a channel with a large temperature shift amount. By specifying, an abnormal channel can be appropriately specified.

The identification of the abnormal channel when the identification process 1 and the identification process 2 are performed will be described with reference to FIG. The seven channels (CH1 to CH7) shown in FIG. 7 correspond to CH1 to CH7 shown in FIG. That is, the temperature sensors 39 corresponding to CH1 to CH7 shown in FIG. 7 are the temperature sensors 39a to 39g shown in FIG. “CH1 operation” shown in FIG. 7 refers to raising or lowering the actual temperature of CH1. Similarly, “CH2 operation” and “CH4 operation” refer to increasing or decreasing the actual temperature of CH2 (or CH4).

FIG. 7 shows nine graphs g1 to g9. Graphs g1 to g3 show the amount of temperature shift of each channel when the actual temperature of each channel is changed. Specifically, the graph g1 shows the temperature shift amount of each channel when the actual temperature of CH1 is increased by 20 ° C. and when the actual temperature of CH1 is decreased by 20 ° C., and the graph g2 increases the actual temperature of CH2 by 20 ° C. The graph g3 shows the temperature shift amount of each channel when the actual temperature of CH4 is raised by 20 ° C and when the actual temperature of CH4 is lowered by 20 ° C. ing. Graphs g4 to g6 show the output amount of each channel when the actual temperature of each channel is changed (the output amount of the heater 38) and the output amount of each channel when the actual temperature is not changed. Show. Specifically, the graph g4 shows the output amount of each channel and the normal output amount when the actual temperature of CH1 is raised by 20 ° C. and lowered by 20 ° C., and the graph g5 shows the actual temperature of CH2. The graph shows the output amount of each channel when the temperature is increased by 20 ° C. and when the temperature is decreased by 20 ° C. and the output amount at normal time. Graph g6 shows the case where the actual temperature of CH4 is increased by 20 ° C. and the output amount is decreased by 20 ° C. The output amount of each channel and the output amount at normal time are shown. Graphs g7 to g9 show the output difference of each channel when the actual temperature of each channel is changed (output difference from the normal time when the temperature is not changed). Specifically, the graph g7 shows the output difference when the actual temperature of CH1 is increased by 20 ° C. and when the actual temperature of CH1 is decreased by 20 ° C., and the graph g8 is obtained when the actual temperature of CH2 is increased by 20 ° C. The output difference when lowered is shown, and the graph g9 shows the output difference when the actual temperature of CH4 is raised by 20 ° C and when lowered by 20 ° C.

As shown in the graphs g1 to g3 in FIG. 7, when the actual temperature is lowered by 20 ° C. (indicated by “20 ° C.” in the graphs g1 to g3), the channel is changed to an abnormal channel by changing the actual temperature. The temperature shift amount of is large. In the example shown in FIG. 7, for example, by setting the bandwidth to 1.5 ° C., it is possible to extract only the abnormal channel whose temperature actually changes. On the other hand, as shown in the graphs g1 to g3 in FIG. 7, when the actual temperature is increased by 20 ° C. (indicated by “−20 ° C.” in the graphs g1 to g3), the channel in which the actual temperature is changed The temperature shift amount other than is larger. For example, in the graph g1, the temperature shift amounts of CH2 and CH3 that are close to CH1 (see FIG. 5) are large. From this, it can be said that the abnormal channel may not be identified only from the temperature shift amount.

As shown in graphs g4 to g6 in FIG. 7, when the actual temperature is increased by 20 ° C. (indicated by “−20 ° C.” in the graphs g4 to g9), the actual temperature is changed to form an abnormal channel. The output amount of the channel is large. In this case, as shown in the graphs g7 to g9 in FIG. 7, the difference in the output amount from the normal time also increases the number of channels that are abnormal channels by changing the actual temperature. In the example shown in FIG. 7, for example, by setting the predetermined value for determining whether or not the difference from the normal value of the output amount is a predetermined level or more to about 20% of the output amount, It is possible to extract only abnormal channels in which are changed (see graphs g7 to g9 in FIG. 7).

From the above, the abnormal channel specifying unit 103 specifies a channel as an abnormal channel when a plurality of channels have a channel whose difference from the normal output amount is a predetermined value or more ( If the identification process 2) does not exist, the abnormal channel can be identified with high accuracy by identifying the channel whose temperature shift amount is not within the bandwidth as the abnormal channel (identification process 1).

The correction unit 104 performs correction control so that the temperature shift amount of the abnormal channel is within the normal range by changing the command temperature of the heater 38 related to the abnormal channel. Specifically, the correction unit 104 acquires the temperature of the hot plate 34 from the temperature sensor 39 of the channel specified as the abnormal channel by the abnormal channel specifying unit 103, and changes the temperature so as to improve the temperature abnormality. 38 command temperature is changed. After the change of the command temperature described above, the correction unit 104 is in a first state where the difference between the output amount of the heater 38 related to the abnormal channel and the output amount of the heater 38 corresponding to the command temperature in the normal state is smaller than a predetermined value. The command temperature change is repeated until The correction unit 104 determines whether or not to continue the subsequent processing based on the display temperature of the temperature sensor 39 in the abnormal channel after entering the first state described above. Specifically, the correction unit 104 continues the subsequent processing when the display temperature acquired from the temperature sensor 39 of the abnormal channel is close to the ideal temperature of the channel, and when the display temperature is not close Cancels the subsequent processing. The fact that the display temperature of the temperature sensor 39 deviates from the ideal temperature despite the first state (the output amount is normal and the actual temperature is correctly corrected and approaches the ideal temperature) means that the temperature sensor Since 39 indicates that it cannot operate normally, the subsequent processing may be stopped.

The controller 100 includes one or a plurality of control computers. For example, the controller 100 includes a circuit 120 illustrated in FIG. The circuit 120 includes one or more processors 121, a memory 122, a storage 123, an input / output port 124, and a timer 125.

The input / output port 124 inputs and outputs electrical signals to and from the elevating

mechanisms

33 and 36, the drive mechanism 53, the temperature sensor 39, and the heater 38. The timer 125 measures the elapsed time by, for example, counting a reference pulse with a fixed period. The storage 123 includes a computer-readable recording medium such as a hard disk. The recording medium records a program for executing a substrate processing procedure described later. The recording medium may be a removable medium such as a nonvolatile semiconductor memory, a magnetic disk, and an optical disk. The memory 122 temporarily records the program loaded from the recording medium of the storage 123 and the calculation result by the processor 121. The processor 121 configures each functional module described above by executing the program in cooperation with the memory 122.

It should be noted that the hardware configuration of the controller 100 is not necessarily limited to that configuring each functional module by a program. For example, each functional module of the controller 100 may be configured by a dedicated logic circuit or an ASIC (Application Specific Integrated Circuit) in which the functional modules are integrated.

[Substrate processing procedure]
Next, as an example of the substrate processing method, a substrate processing procedure executed by the heat treatment unit U2 under the control of the controller 100 will be described with reference to FIG. The sequence of the substrate processing shown in FIG. 9 is executed in parallel with other substrate processing, and is continuously executed while the temperature of the hot plate 34 is in a steady state.

In the process shown in FIG. 9, step S1 is first executed. In step S1, the controller 100 determines whether there is a channel (abnormal channel) in which the display temperature is abnormal. Specifically, the controller 100 calculates a temperature shift amount that is the difference between the display temperature of the temperature sensor 39 and the ideal temperature according to the setting of the heater 38 for each of the plurality of channels of the hot plate 34. It is determined whether the shift amount is within a predetermined bandwidth, and when there is a channel that is not within the bandwidth, it is determined that an abnormal channel exists.

Subsequently, step S2 is executed. In step S <b> 2, the controller 100 determines whether there is a channel with a large increase in the output amount. Specifically, the controller 100 determines whether or not a plurality of channels have channels whose difference from the normal output amount is a predetermined value or more. If it is determined in step S2 that there is a channel whose difference from the normal output amount is a predetermined value or more, step S3 is executed, and if it is determined that there is no channel, step S4 is executed.

In step S3, the controller 100 identifies a channel having a large increase in output amount (a difference from the normal output amount being equal to or greater than a predetermined value) as an abnormal channel. In step S4, the controller 100 identifies a channel (temperature shift channel) that has been determined that the temperature shift amount is not within the bandwidth as an abnormal channel.

Subsequently, step S5 is executed. In step S5, the controller 100 executes correction control. The above is an example of the substrate processing procedure.

Next, step 5 (correction control) of the above-described substrate processing procedure will be described in detail with reference to FIG. In the process shown in FIG. 10, step S51 is first executed. In step S51, the controller 100 changes the command temperature of the heater 38 related to the abnormal channel. Specifically, the correction unit 104 acquires the temperature of the hot plate 34 from the temperature sensor 39 of the channel specified as the abnormal channel by the abnormal channel specifying unit 103, and changes the temperature so as to improve the temperature abnormality. 38 command temperature is changed.

Subsequently, step S52 is executed. In step S52, the controller 100 determines whether or not a predetermined time has elapsed since the change of the command temperature in step S51 (waiting for a predetermined stable time). If it is determined in step S52 that the predetermined time has elapsed, step S53 is executed. If it is determined that the predetermined time has not elapsed, step S52 is executed again.

In step S53, the controller 100 controls the heater 38 corresponding to the output amount (current output amount) MV of the heater 38 related to the abnormal channel and the normal command temperature (that is, the command temperature before the change in step S51). It is determined whether or not the difference from the output amount (normal output amount) MV ′ is in a first state smaller than a predetermined value. If it is determined in step S53 that the first state is not reached, the process of step S51 is executed again, and the command temperature is changed again. On the other hand, when it determines with it being in a 1st state in step S53, step S54 is performed.

In step S54, the controller 100 determines whether or not the difference between the display temperature PV acquired from the temperature sensor 39 of the abnormal channel and the ideal temperature SV of the channel is smaller than a predetermined value. When it is determined in step S54 that the temperature is smaller than the predetermined value (that is, the display temperature PV is close to the ideal temperature SV), the controller 100 determines that the process is normal and continues the subsequent process (step S55). On the other hand, when it determines with it not being smaller than predetermined value in step S54, the controller 100 determines with an abnormal process and stops subsequent processes (step S56). The above is an example of the correction control process.

[Function and effect]
The heat treatment unit U2 is provided corresponding to a plurality of channels of the hot plate 34, a hot plate 34 for placing the wafer W and applying heat to the wafer W, a heater 38 for heating the hot plate 34, and the hot plate 34. A plurality of temperature sensors 39a to 39g for measuring the temperature of 34, and a controller 100. The controller 100 has a display temperature of the temperature sensor 39 and an ideal temperature corresponding to the setting of the heater 38 for each of a plurality of channels. And calculating whether or not the temperature shift amount is within a predetermined bandwidth, and specifying an abnormal region based on the determination result (for example, the temperature shift amount is When there is a channel that is not within the bandwidth, the channel is identified as an abnormal region).

In the heat treatment unit U2, temperature sensors 39 are provided corresponding to the plurality of channels of the hot plate 34, respectively. Then, for each of the plurality of channels, it is determined whether or not the temperature shift amount that is the difference between the display temperature and the ideal temperature is within the bandwidth, and the abnormal channel is specified based on the determination result. As described above, the temperature sensors 39a to 39g are provided for each of the plurality of channels, and it is determined whether or not the temperature shift amount is within the bandwidth for each of the plurality of channels, and the determination result is used to identify the abnormal channel. As a result, the abnormal channel can be identified in consideration of the temperature condition (the presence or absence of occurrence of temperature abnormality) in each of the plurality of channels. By taking into account the temperature conditions of each channel, for example, compared with a case where only one temperature sensor is provided as a whole, an abnormal channel (defect occurrence region) causing a temperature abnormality is accurately identified. be able to.

The controller 100 may specify an abnormal channel in consideration of both the temperature shift amount of the channel whose temperature shift amount is not within the bandwidth and the temperature shift amount of the channel whose temperature shift amount is within the bandwidth. For example, consider a case where the display temperature of one of the two channels is higher than the display temperature of the other channel, and it is determined that the temperature shift amount is not within the bandwidth for only one channel. In this case, for example, it is estimated that the actual temperature in either one of the two channels is lower than normal. If the actual temperature of the other channel (the channel whose temperature shift amount is determined to be within the bandwidth) is decreasing, the temperature shift amount of the other channel is within the bandwidth, and the other channel Is not excessively exerted on one channel, and the control by the heater 38 is appropriately performed so that the temperature shift amount of one channel is within the bandwidth. It is considered that the temperature shift amount is not stable only in the bandwidth). Therefore, it is considered that the actual temperature does not decrease in the other channel. On the other hand, if the actual temperature is reduced in one channel (the channel for which the temperature shift amount is determined not to be within the bandwidth), the temperature of one channel is lowered according to the display temperature of one channel. Therefore, even when the control by the heater 38 is performed (when the output of the heater 38 corresponding to one channel is set to zero, for example), the actual temperature is raised by the heat effect of the other channel, Accordingly, the display temperature may rise, and the state where the temperature shift amount is not within the bandwidth may be continued. Therefore, in the case where the actual temperature is lowered, it is determined that the temperature shift amount of one channel is not within the bandwidth, and the temperature shift amount of the other channel is determined to be within the bandwidth, The actual temperature is decreased in one of the channels, and the one channel can be identified as an abnormal channel. Thus, an abnormal channel can be appropriately identified by considering the temperature shift amount of a channel whose temperature shift amount is not within the bandwidth and the temperature shift amount of the channel within the bandwidth.

The controller 100 identifies an abnormal channel in consideration of the output amount of the heater 38 corresponding to each of the plurality of channels. For example, when temperature control is performed for an abnormal channel, the temperature control affects the region other than the abnormal channel, and the temperature shift amount of the channel other than the abnormal channel may be out of the bandwidth. When the temperature shift amount is outside the bandwidth other than the abnormal channel, the abnormal channel cannot be uniquely identified only from the temperature shift amount. Here, the output amount of the heater 38 changes according to the actual temperature of the heat plate 34. For this reason, the controller 100 can appropriately identify the channel (that is, the abnormal channel) in which the actual temperature is greatly changed by identifying the abnormal channel in consideration of the output amount of the heater 38. That is, by specifying the abnormal channel in consideration of the output amount, the channel in which the temperature abnormality has occurred can be specified with higher accuracy.

The controller 100 identifies the channel as an abnormal channel when there is a channel whose difference from the normal output amount is a predetermined value or more in a plurality of channels. A channel whose quantity is not within the bandwidth is identified as an abnormal channel.

For example, as a mode in which the measured temperature of the temperature sensor 19 deviates from the actual temperature of the hot plate 34 due to a defect related to the temperature sensor 19 or the like, a case where the display temperature is higher than the actual temperature (display temperature rising case) and a display temperature are A case where the temperature is lower than the actual temperature (display temperature drop case) is considered. In the case where the display temperature rises, the setting of the heater 38 is changed (changes in the direction to lower the temperature) based on the display temperature, and the display temperature and actual temperature of the channel (display temperature rise channel) corresponding to the heater 38 are lowered. Will be. Then, when the influence of the actual temperature drop in the display temperature rise channel reaches the other channels, the display temperature and the actual temperature of the other channels are slightly lowered (with a smaller width than the display temperature rise channel). As described above, in the display temperature increase case, the display temperature increases in the display temperature increase channel, and the output amount decreases as the actual temperature decreases in the display temperature increase channel. In the case where the display temperature rises, both the display temperature rise channel and other channels have a lower actual temperature and the output amount is smaller. Does not exist. Then, the display temperature increasing channel whose actual temperature is lower than the other channels and can become an abnormal channel has a higher display temperature and a larger temperature shift amount than the other channels. Based on the above, when there is no channel where the difference in output amount from the normal time is large, by specifying a channel with a large temperature shift amount (not within the bandwidth) as an abnormal channel, a temperature abnormality occurs. Can be accurately identified. Further, in the display temperature lowering case, when the setting of the heater 38 is changed (changed in the direction of increasing the temperature) based on the display temperature, the display temperature and the actual temperature of the channel (display temperature lowering channel) corresponding to the heater 38 are changed. The temperature will rise. Then, the influence of the actual temperature rise in the display temperature lowering channel extends to the other channels, so that the display temperature and actual temperature of the other channels are slightly increased (with a smaller width than the display temperature lowering channel). Thus, in the display temperature lowering case, the display temperature is lower in the display temperature lowering channel than in the other channels, and the output amount is increased by increasing the actual temperature. In the display temperature decrease case, the output amount of the display temperature decrease channel that can be an abnormal channel is prominently larger than the other channels. The display temperature of the other channel is higher than that of the display temperature lowering channel (that is, the temperature shift amount is large). From the above, when there is a channel with a large difference in output amount, a channel with a large difference in output amount from the normal state is identified as an abnormal channel instead of a channel with a large temperature shift amount. The generated channel can be accurately identified.

The controller 100 starts determining whether or not the temperature shift amount is within the normal range after the temperature of the hot plate 34 reaches a steady state. Thus, the temperature shift amount is not determined in a transition period or the like at the time of temperature rise control in which the output amount applied from the heater 38 to the heat plate 34 is intentionally changed, and a period in which an abnormal channel needs to be identified ( The processing relating to the identification of the abnormal channel can be performed only in the period of the steady state).

The controller 100 sets the above-described normal range wider than a range that can vary as a difference between the display temperature of the temperature sensor 39 and the above-described ideal temperature in the steady state of the hot plate 34 that operates normally. As a result, for example, when the wafer W is loaded while the apparatus is operating after reaching the steady state (when the chamber is opened), the temperature shift amount in a state in which the display temperature varies greatly while in the normal operating state. Is determined not to be within the bandwidth. That is, it is possible to prevent a normal process from being hindered by the control described above.

The heater 38 is configured to heat a plurality of channels in accordance with a preset command temperature, and the controller 100 changes the temperature of the abnormal channel by changing the command temperature of the heater 38 related to the abnormal channel. The correction control is further performed so that the amount falls within the normal range. By changing the command temperature set for the heater 38, the temperature shift amount of the abnormal channel can be corrected easily and appropriately.

After the change in the command temperature, the controller 100 is in a first state in which the difference between the output amount of the heater 38 related to the abnormal channel and the output amount of the heater 38 corresponding to the command temperature at the normal time is smaller than a predetermined value. Repeat until the command temperature is changed. For example, when the display temperature of the temperature sensor 19 that has been partially disconnected deviates from the actual temperature of the hot plate 34, the display temperature of the temperature sensor 19 may not be accurate. Even in such a case, it is determined whether or not the output amount corresponding to the actual temperature is normal. If the output amount is not normal, the process of changing the command temperature is repeated to display the temperature sensor 19. Temperature anomalies can be corrected regardless of temperature accuracy.

The controller 100 determines whether or not to continue the subsequent processing based on the display temperature of the temperature sensor 39 in the abnormal channel after the controller 100 enters the first state. After the temperature abnormality is corrected in the first state (that is, the actual temperature is accurate), it is determined whether or not the display temperature of the temperature sensor 19 of the channel that has become the abnormal channel is accurate. It is possible to appropriately determine whether it is possible to continue processing using the sensor 19.

The controller 100 continuously determines whether or not the temperature shift amount is within the above-described normal range while the temperature of the hot plate 34 is in a steady state. By detecting abnormal channels continuously while in steady state, dedicated operation for detecting abnormal channels is unnecessary, and abnormal channels are detected without affecting the normal device recipe. Can do.

As mentioned above, although embodiment was described, this indication is not limited to the above-mentioned embodiment.

For example, the example in which the abnormal channel is specified in consideration of the output amount of the heater 38 has been described. However, when the abnormal channel can always be specified only from the temperature shift amount, the temperature is not affected by the output amount of the heater 38. An abnormal channel may be specified only from the shift amount.

2 ... Coating / developing device (substrate processing device), 34 ... hot plate, 38 ... heater (temperature controller), 39a, 39b, 39c, 39d, 39e, 39f, 39g ... temperature sensor, 100 ... controller (control unit) , W: Wafer (substrate).

Claims

A heat plate for placing the substrate and applying heat to the substrate;
A temperature controller for heating the hot plate;
A plurality of temperature sensors provided corresponding to a plurality of regions of the hot plate and measuring the temperature of the hot plate;
A control unit,
The controller is
For each of the plurality of regions, a temperature shift amount that is a difference between a measured temperature of the temperature sensor and an ideal temperature according to the setting of the temperature controller is calculated, and the temperature shift amount is within a predetermined normal range. Determining whether or not
A substrate processing apparatus configured to execute the step of identifying an abnormal region based on a determination result.
The controller considers both the temperature shift amount in a region where the temperature shift amount is not within the normal range and the temperature shift amount in a region where the temperature shift amount is within the normal range, and the abnormality The substrate processing apparatus according to claim 1, wherein the region is specified.
The substrate processing apparatus according to claim 1 or 2, wherein the control unit specifies the abnormal region in consideration of an output amount of the temperature controller corresponding to each of the plurality of regions.
The control unit identifies the region as the abnormal region when there is a region where the difference between the output amount and the normal value is equal to or greater than a predetermined value in the plurality of regions, and when the region does not exist 4. The substrate processing apparatus according to claim 3, wherein a region where the temperature shift amount is not within the normal range is specified as the abnormal region.
The control unit according to any one of claims 1 to 4, wherein the controller starts determining whether or not the temperature shift amount is within the normal range after the temperature of the hot plate reaches a steady state. Substrate processing equipment.
The control unit sets the normal range wider than a range that can vary as a difference between the measured temperature and the ideal temperature in a steady state of the hot plate operating normally. The substrate processing apparatus according to claim 1.
The temperature controller is configured to heat the plurality of regions according to a preset command temperature,
The controller is
The correction control is further performed by changing the command temperature related to the abnormal region so that the temperature shift amount of the abnormal region is within the normal range. The substrate processing apparatus according to any one of claims 1 to 6.
After the change of the command temperature, the controller is configured such that a difference between an output amount of the temperature controller related to the abnormal region and an output amount of the temperature controller corresponding to the command temperature in a normal state is greater than a predetermined value. The substrate processing apparatus according to claim 7, wherein the command temperature is repeatedly changed until a small first state is reached.
The substrate processing apparatus according to claim 8, wherein the control unit determines whether or not to continue the subsequent processing based on the measured temperature in the abnormal region after the first state is reached.
10. The control unit according to claim 1, wherein the control unit continuously determines whether the temperature shift amount is within the normal range while the temperature of the hot plate is in a steady state. The substrate processing apparatus as described.
A temperature shift amount that is a difference between the measured temperature of the plurality of regions of the hot plate that applies heat to the substrate and the ideal temperature of the plurality of regions is calculated, and whether or not the temperature shift amount is within a predetermined normal range. Determining whether or not
And a step of identifying an abnormal region based on the determination result.
In the step of identifying the abnormal region, both the temperature shift amount of the region where the temperature shift amount is not within the normal range and the temperature shift amount of the region where the temperature shift amount is within the normal range are considered. The substrate processing method according to claim 11, wherein the abnormal region is specified.
The substrate processing method according to claim 11 or 12, wherein in the step of specifying the abnormal region, the abnormal region is specified in consideration of an output amount of a temperature controller corresponding to each of the plurality of regions.
In the step of identifying the abnormal area, if there is an area where the difference between the output amount and the normal amount is a predetermined value or more in the plurality of areas, the area is identified as the abnormal area and does not exist 14. The substrate processing method according to claim 13, wherein a region where the temperature shift amount is not within the normal range is specified as the abnormal region.
15. The substrate processing method according to claim 11, wherein the determining step is started after the temperature of the hot plate reaches a steady state.
The step of determining is executed by setting the normal range wider than a range that can vary as a difference between the measured temperature and the ideal temperature in a steady state of the hot plate that operates normally. 16. The substrate processing method according to any one of items 15 to 15.
The method further includes a step of performing correction control so that the temperature shift amount of the abnormal region is within the normal range by changing a command temperature of a temperature controller that heats the hot plate. The substrate processing method as described in any one of Claims.
In the step of performing the correction control, after the change of the command temperature, the difference between the output amount of the temperature controller related to the abnormal region and the output amount of the temperature controller corresponding to the command temperature at normal time is The substrate processing method according to claim 17, wherein the change in the command temperature is repeated until the first state is smaller than a predetermined value.
19. The substrate processing method according to claim 18, wherein, in the step of performing the correction control, whether or not to continue the subsequent processing is determined based on the measured temperature of the abnormal region after the first state.
20. The substrate processing method according to claim 11, wherein the determination step is continuously executed while the temperature of the hot plate is in a steady state.
A computer-readable storage medium storing a program for causing an apparatus to execute the substrate processing method according to any one of claims 11 to 20.