TW201939639A - Substrate processing device, substrate processing method, and storage medium - Google Patents

Abstract

According to the present invention, a heat treatment unit is provided with: a hot plate on which a wafer is placed and which applies heat to the wafer; a heater that heats the hot plate; a plurality of temperature sensors that are provided corresponding to a plurality of channels of the hot plate and that measure the temperature of the hot plate; and a controller. The controller is configured to: calculate, for each of the plurality of channels, a temperature shift amount which is the differences between a display temperature of the temperature sensor and the ideal temperature according to the settings of the heater, and determine whether the temperature shift amount is within a predetermined band width; and specify, as abnormal regions, the channels in which the temperature shift amount is not within the band width.

Description

Substrate processing device, substrate processing method, and memory medium

The present disclosure relates to a substrate processing apparatus, a substrate processing method, and a memory medium.

In the heat treatment for applying heat to the substrate by a hot plate, it is important to maintain the temperature of the hot plate at a predetermined target temperature. For example, in the technology described in Patent Document 1, a temperature sensor is provided to detect the temperature of a heating member (corresponding to the above-mentioned hot plate), and the temperature sensor detects an abnormal temperature of the heating member, thereby detecting the occurrence of a failure. .
[Prior technical literature]
[Patent Literature]

[Patent Document 1] JP 2017-65126

[Problems to be Solved by the Invention]

As a configuration for performing the heat treatment, for example, a configuration in which a hot plate is heated by a thermostat for each of a plurality of channels (regions) to give heat to a substrate can be considered. In such a configuration, in the case where a temperature abnormality is detected by the temperature sensor, the occurrence of the temperature abnormality can be defined by a bad condition generated in that channel (area) of the hot plate.

In view of the above-mentioned facts, the present disclosure aims to define a high-accuracy area where a temperature abnormality occurs when a temperature abnormality occurs during heat treatment.

[Means for solving problems]

A substrate processing apparatus according to one aspect of the present disclosure includes: a hot plate for placing a substrate and applying heat to the substrate; a thermostat for heating the hot plate; a plurality of temperature sensors and a hot plate A plurality of regions are provided correspondingly to measure the temperature of the hot plate; and a control unit; the control unit is configured to execute the following: calculating the measurement temperature of the temperature sensor according to each of the plurality of regions corresponding to the setting of the thermostat The difference between the ideal temperatures is the temperature deviation, and whether the temperature deviation is within a prescribed normal range is determined, and the abnormal area is defined according to the judgment result.

In a substrate processing apparatus according to one aspect of the present disclosure, a temperature sensor is provided corresponding to each of the plurality of regions of the hot plate. The difference between the measured temperature and the ideal temperature, that is, whether the temperature deviation is within a normal range is determined according to each of the plurality of regions, and the abnormal region is defined according to the result of the judgment. In this way, a temperature sensor is set for each of the plurality of regions, and whether the temperature offset is within the normal range is determined for each of the plurality of regions. By using the determination result for the definition of the abnormal region, it can be considered The abnormal conditions are defined by the temperature conditions (such as the occurrence of temperature abnormality) in the plurality of areas. By considering the temperature conditions of each area, for example, compared with the case where only one temperature sensor is used in the entirety, the abnormal area (the area where the bad situation occurs) causing temperature abnormality can be defined with high accuracy. That is, according to the substrate processing apparatus of the present disclosure, in the case where a temperature abnormality is generated during the heat treatment, it is possible to accurately define a generation area of a bad condition that causes the temperature abnormality.

The control unit considers both the temperature deviation amount of the area where the temperature deviation amount is not within the normal range and the temperature deviation amount of the area where the temperature deviation amount is within the normal range, and the abnormal area may be defined. For example, consider that the measurement temperature of one of the two regions is higher than the measurement temperature of the other region, and judge that the temperature deviation of only one region is not within the normal range. In this case, for example, it is estimated that the actual temperature of one of the two regions is lower than that at the normal time. If the actual temperature decreases in the other region (the region where the temperature deviation is within the normal range), the temperature deviation in the other region is within the normal range, and the thermal influence of the other region will not be excessive The above-mentioned state (the state in which the temperature offset of only one region is not within the normal range) is appropriately controlled so that the temperature deviation of the one region is within the normal range. Can be considered as unstable. Therefore, it can be considered that the actual temperature does not decrease in the other region. On the other hand, if the actual temperature decreases in one of the areas (area judged to have a temperature deviation outside the normal range), the temperature of one area should be lowered based on the temperature adjustment even if it corresponds to the measured temperature of the one area. In the case of the control of the device (when the output of the thermostat corresponding to one area is set to zero (0), for example), the actual temperature is pulled up due to the heat of the other area, and the When the amount of pull-up is measured, the temperature also rises, and the state where the temperature deviation is not in the normal range continues. Therefore, if it is judged that the temperature offset of one area is not within the normal range when the actual temperature is reduced, and the temperature deviation of the other area is within the normal range, the actual temperature in one area may be reduced. This area is defined as an abnormal area. As such, the abnormal region can be appropriately defined by considering the temperature shift amount of the region where the temperature shift amount is not within the normal range and the temperature shift amount of the region within the normal range.

The control unit considers the output of the thermostat corresponding to each of the plurality of regions, and may define the abnormal region. For example, when temperature control is performed for an abnormal area, the influence of the temperature control may also affect areas other than the abnormal area, and the temperature deviation amount of the area outside the abnormal area may be outside the normal range. When the temperature deviation amount outside the abnormal area is outside the normal range, the abnormal area cannot be defined by the temperature deviation amount alone. Here, the output of the thermostat changes corresponding to the actual temperature of the hot plate. Therefore, by defining the abnormal area by the control unit considering the output of the thermostat, it is possible to appropriately define an area (that is, an abnormal area) with a large actual temperature change. That is, by defining the abnormal area in consideration of the output amount, it is possible to define the area where the temperature abnormality occurs with higher accuracy.

When there are areas in which the difference between the output and normal time is more than a predetermined value in a plurality of areas, the control unit defines the area as an abnormal area. If the area does not exist, the temperature deviation is not within the normal range. The area may be defined as an abnormal area.

For example, if the measured temperature of the temperature sensor deviates from the actual temperature of the hot plate based on reasons such as the poor condition of the temperature sensor, it can be considered that the measured temperature is higher than the actual temperature (measured temperature rise), and A condition where the measurement temperature is lower than the actual temperature (a measurement temperature decrease condition). When the measurement temperature rises, the setting of the thermostat is changed (changed in the direction of decreasing the temperature) according to the measurement temperature, and the measurement temperature and the actual temperature of the region (the measurement temperature increase area) corresponding to the decrease of the thermostat become. The effect of the actual temperature decrease in the measurement temperature rising region also affects other regions, causing the measurement temperature and actual temperature in other regions to decrease slightly (in a smaller range than the measurement temperature increase region). In this way, in the measurement temperature rising condition, the measurement temperature in the measurement temperature rising region becomes higher than in other regions, and the actual temperature decreases and the output becomes smaller. In the measurement temperature rising condition, the actual temperature decreases and the output decreases in any of the measurement temperature rising region and the other regions. Therefore, there is no region in which the difference between the output volume and the normal output is large in the plurality of regions. In addition, the actual temperature is lower than the other regions and becomes the measurement temperature rising region of the abnormal region, and the measurement temperature becomes higher than the other regions by a larger amount of temperature deviation. Based on the above reasons, when there is no region with a large difference in output from normal, by defining a region with a large temperature deviation (not within the normal range) as an abnormal region, it can be defined with high accuracy. Areas of abnormal temperature. In addition, if the setting of the thermostat is changed (changed to the direction of rising temperature) in accordance with the measured temperature when the measured temperature is reduced, the measured temperature and the actual temperature of the region corresponding to the thermostat (measured temperature decrease region) will rise. . The effect of the actual temperature rise in the area where the measured temperature is reduced also affects other areas, and the measured temperature and the actual temperature in other areas also rise slightly (in a smaller range than the area where the measured temperature decreases). As described above, when the measurement temperature is lowered, the measurement temperature in the measurement temperature-reduced region is lower than in other regions, and the actual temperature is increased, and the output is increased. In the case where the measurement temperature is reduced, the output of the measurement temperature-reduced area, which may be an abnormal area, becomes larger than other areas. In addition, the measurement temperature in other regions is higher than the measurement temperature reduction region (that is, the temperature shift amount is large). Based on the above, when there is a region where the difference in output volume becomes large, instead of using a region with a large temperature offset, a region with a large difference in output volume from normal time is defined as an abnormal region. , Can accurately define the area where the temperature abnormality occurs.

After the temperature of the hot plate becomes constant, the control unit may start to determine whether the temperature deviation amount is within a normal range. According to this, the determination of the temperature deviation amount is not performed during the transition period such as the temperature rise control when the temperature regulator intends to change the output amount applied to the hot plate, and the boundary of the abnormal region can be limited to a necessary period (a period of a constant state) ) To perform the process of defining the abnormal area.

The control unit may set the normal range to a wider range that may vary than the difference between the measured temperature and the ideal temperature in the constant state of the hot plate that is operating normally. According to this, for example, in a normal operating state such as when a substrate is carried in during device operation after reaching a constant state, but in a state where the measurement temperature fluctuates greatly, it can be prevented that the temperature deviation amount is out of the normal range. That is, the above-mentioned control can prevent the normal process from being hindered.

The thermostat is configured to heat a plurality of regions in accordance with a preset command temperature, and the control unit may be configured to change the command temperature related to the abnormal region and further execute it so that the temperature deviation of the abnormal region becomes Correction control is performed within the normal range. By changing the commanded temperature set in the thermostat, it is possible to easily and appropriately correct the temperature offset in the abnormal region.

After the control unit changes the command temperature, the difference between the output of the thermostat related to the abnormal area and the output of the thermostat corresponding to the command temperature in the normal state becomes the first state less than a predetermined value, The command temperature may be changed repeatedly. For example, if the measured temperature of the partially disconnected temperature sensor deviates from the actual temperature of the hot plate, it may be considered that the measured temperature of the temperature sensor is incorrect. Even in such a case, it is judged whether the output corresponding to the actual temperature is normal. In the case of abnormal conditions, the process of changing the command temperature can be repeated without being affected by the accuracy of the measured temperature of the temperature sensor. Correct the abnormal temperature.

After the control unit is in the first state, it may be judged whether to continue the subsequent processing based on the measured temperature in the abnormal region. After the first state is reached and the temperature abnormality is corrected (that is, the actual temperature is correct), it is determined whether the measured temperature of the temperature sensor in the area that is the abnormal area is correct. Based on this, it can be appropriately judged whether it can be continued The temperature sensor performs processing.

The control unit may continue to determine whether the temperature offset is within a normal range while the temperature of the hot plate is constant. By continuing to detect the abnormal area during the constant state, the unnecessary action of detecting the abnormal area is not required, and the abnormal area can be detected without affecting the normal device operation recipe.

In one aspect of the present disclosure, a substrate processing method includes calculating a difference between measured temperatures of a plurality of regions of a hot plate that imparts heat to a substrate and an ideal temperature of the plurality of regions, that is, a temperature offset, and determining the temperature. Projects that judge whether the offset is within the prescribed normal range; and projects that define abnormal areas based on the judgment results.

In the process of defining anomalous areas, both the temperature deviation of the area where the temperature deviation is outside the normal range and the temperature deviation of the area where the temperature deviation is within the normal range can be considered. Define.

In the engineering of defining anomalous areas, the output of a thermostat corresponding to a plurality of areas may be considered to define the anomalous areas.

In the process of defining an abnormal area, if there is an area where the difference between the output and normal time is more than a predetermined value in a plurality of areas, the area is defined as an abnormal area, and if it does not exist, the temperature is An area where the offset is not within the normal range may be defined as an abnormal area.

After the temperature of the hot plate has reached a constant state, the process of judging may be started.

The normal range is set to be wider than the range that may vary as the difference between the measured temperature and the ideal temperature in the constant state of the hot plate in normal operation, and the process of performing judgment may also be performed.

The substrate processing method may further include a process of performing correction control such that a temperature deviation amount of the abnormal region falls within a normal range by changing a command temperature of a thermostat for heating the hot plate.

In the process of performing correction control, after the change of the command temperature, the difference between the output of the thermostat related to the abnormal area and the output of the thermostat corresponding to the command temperature at normal time is less than the specified value. It is also possible to repeat the change of the command temperature until the first state.

In the process of performing the correction control, after the state becomes the first state, it can be judged whether to continue the subsequent processing based on the measured temperature of the abnormal area.

During the period when the temperature of the hot plate is constant, it is also possible to continue the judgment process.

A computer-readable medium according to one aspect of the present disclosure is a program for causing a device to execute the substrate processing method described above.

[Inventive effect]

According to the substrate processing apparatus, the substrate processing method, and the memory medium of the present disclosure, in the case where a temperature abnormality occurs during the heat treatment, it is possible to highly accurately define a generation area of the bad condition that causes the temperature abnormality.

Hereinafter, embodiments will be described in detail with reference to the drawings. In the description, the same elements or elements having the same function are denoted by the same reference numerals, and repeated descriptions are omitted.

[Substrate processing system]
The substrate processing system 1 is a system for forming a photosensitive film on a substrate, exposing the photosensitive film, and developing the photosensitive film. The substrate to be processed is, for example, a semiconductor wafer W. The photosensitive film is, for example, a resist film.

The substrate processing system 1 includes a coating and developing device 2 and an exposure device 3. The exposure device 3 performs exposure processing of a resist film formed on the wafer W. Specifically, the exposure target portion of the resist film is irradiated with energy rays by a method such as liquid immersion exposure. The coating cymbal developing device 2 is used for forming a resist film on the surface of the wafer W before the exposure device 3 performs an exposure process, and after the exposure process, the resist film is developed.

(Coated development device)
Hereinafter, the configuration of the coating / developing device 2 will be described as an example of a substrate processing apparatus. As shown in FIG. 1 to FIG. 3, the coating and imaging device 2 includes: a wafer box block 4; a processing block 5; an interface block 6; and a controller 100.

The wafer box block 4 is used to introduce the wafer W in the coating / development device 2 and to export the wafer W from the coating / development device 2. For example, the wafer cassette block 4 can support a plurality of wafer cassettes 11 for a wafer W, and a transfer arm A1 is built in. The wafer cassette 11 stores, for example, a plurality of wafers W in a circular shape. The transfer arm A1 takes out the wafer W from the wafer box 11 and transfers it to the processing block 5, and receives the wafer W from the processing block 5 and returns it to the wafer box 11.

The processing block 5 has a plurality of processing modules 14, 15, 16, and 17. As shown in FIG. 2 and FIG. 3, the processing modules 14, 15, 16, and 17 have a plurality of liquid processing units U1, a plurality of heat treatment units U2, and a transfer arm for transferring wafers W to the units. A3. The processing module 17 further includes a direct transfer arm A6 for transferring the wafer W without passing through the liquid processing unit U1 and the heat treatment unit U2. The liquid processing unit U1 applies a processing liquid to the surface of the wafer W. The heat treatment unit U2 has, for example, a built-in hot plate and a cooling plate, and the wafer W is heated by the hot plate, and the heated wafer W is cooled by the cooling plate to perform heat treatment.

The processing module 14 forms a lower layer film on the surface of the wafer W by the liquid processing unit U1 and the heat treatment unit U2. The liquid processing unit U1 of the processing module 14 applies a processing liquid for forming a lower layer film on the wafer W. The heat treatment unit U2 of the processing module 14 performs various heat treatments accompanying the formation of the underlying film.

The processing module 15 forms a resist film on the lower film by the liquid processing unit U1 and the heat treatment unit U2. The liquid processing unit U1 of the processing module 15 applies a processing liquid (coating liquid) for forming a resist film on the lower layer film. The heat treatment unit U2 of the processing module 15 performs various heat treatments with the formation of a resist film. The details of the liquid processing unit U1 of the processing module 15 will be described later.

The processing module 16 forms an upper layer film on the resist film by the liquid processing unit U1 and the heat treatment unit U2. The liquid processing unit U1 of the processing module 16 applies a processing liquid for forming an upper layer film on the resist film. The heat treatment unit U2 of the processing module 16 performs various heat treatments accompanying the formation of the upper film.

The processing module 17 performs the development processing of the resist film after exposure by the liquid processing unit U1 and the heat treatment unit U2. The liquid processing unit U1 of the processing module 17 is coated with a processing liquid (developing liquid) for development on the surface of the wafer W after exposure, and then rinsed off by a cleaning processing liquid (rinsing liquid). , Development of the resist film. The heat treatment unit U2 of the processing module 17 performs various heat treatments accompanied by development processing. Specific examples of the heat treatment include heat treatment (PEB: Post Exposure Bake) before development processing, heat treatment (PB: Post Bake) after development processing, and the like.

A shelf unit U10 is provided on the wafer cassette block 4 side in the processing block 5. The shelf unit U10 is divided into a plurality of compartments juxtaposed in the vertical direction. A lifting arm A7 is provided near the shelf unit U10. The elevating arm portion A7 elevates the wafer W between the compartments of the rack unit U10. A shelf unit U11 is provided on the interface block 6 side in the processing block 5. The shelf unit U11 is divided into a plurality of compartments juxtaposed in the vertical direction.

The interface block 6 transfers the wafer W to and from the exposure device 3. For example, the interface block 6 has a transfer arm A8 built therein, and is connected to the exposure device 3. The transfer arm A8 transfers the wafer W disposed on the shelf unit U11 to the exposure device 3, and receives the wafer W from the exposure device 3 and returns the wafer W to the shelf unit U11.

The controller 100 controls the coating / developing device 2 in such a manner that the coating / developing device executes the processing according to the following procedure.

First, the controller 100 controls the transfer arm A1 so that the wafer W in the wafer cassette 11 is transferred to the rack unit U10, and lifts and lowers the wafer W in a manner that the wafer W is arranged in the compartment for the processing module 14. The arm A7 controls.

Next, the controller 100 controls the transfer arm A3 so that the wafer W of the rack unit U10 is transferred to the liquid processing unit U1 and the heat treatment unit U2 in the processing module 14 so as to be formed on the surface of the wafer W The manner of the lower film controls the liquid processing unit U1 and the heat treatment unit U2. After that, the controller 100 controls the transfer arm A3 so that the wafer W on which the lower film is formed returns to the rack unit U10, and lifts the lift arm so that the wafer W is disposed in the compartment for the processing module 15. Section A7 controls.

Next, the controller 100 controls the transfer arm A3 so that the wafer W of the rack unit U10 is transferred to the liquid processing unit U1 and the heat treatment unit U2 in the processing module 15 so as to form a film on the wafer W The manner of forming the resist film controls the liquid processing unit U1 and the heat treatment unit U2. Thereafter, the controller 100 controls the transfer arm A3 so that the wafer W is returned to the rack unit U10, and controls the lift arm A7 so that the wafer W is disposed in the compartment for the processing module 16.

Next, the controller 100 controls the transfer arm A3 so that the wafer W of the rack unit U10 is transferred to each unit in the processing module 16 to form an upper film on the resist film of the wafer W The liquid processing unit U1 and the heat treatment unit U2 are controlled. Thereafter, the controller 100 controls the transfer arm A3 so that the wafer W is returned to the rack unit U10, and controls the lift arm A7 so that the wafer W is disposed in the compartment for the processing module 17.

Next, the controller 100 controls the direct transfer arm A6 so that the wafer W of the rack unit U10 is transferred to the rack unit U11, and controls the transfer arm A8 so that the wafer W is transferred to the exposure apparatus 3. . After that, the controller 100 receives the wafer W that has been subjected to the exposure processing from the exposure device 3 and returns the wafer W to the rack unit U11 to control the transfer arm A8.

Next, the controller 100 controls the transfer arm A3 so that the wafer W of the rack unit U11 is transferred to each unit in the processing module 17, and performs a development process on the resist film of the wafer W The liquid processing unit U1 and the heat treatment unit U2 are controlled. After that, the controller 100 controls the transfer arm A3 so that the wafer W returns to the rack unit U10, and controls the lift arm A7 and the transfer arm A1 so that the wafer W returns to the wafer cassette 11. . The coating and developing process is completed as described above.

The specific configuration of the substrate processing apparatus is not limited to the configuration of the coating / developing device 2 described above. The substrate processing apparatus may be any one as long as it includes a liquid processing unit U1 (liquid processing unit U1 for processing modules 14, 15, and 16) for forming a film, and a controller 100 capable of controlling the same.

[Heat treatment unit]
Next, the heat treatment unit U2 of the processing module 15 will be described in detail. As shown in FIG. 4, the heat treatment unit U2 includes a housing 90, a heating mechanism 30, a temperature adjustment mechanism 50, and a controller 100 (control unit).

The housing 90 is a processing container that houses the heating mechanism 30 and the temperature adjustment mechanism 50. A carrying port 91 for a wafer W is provided on a side wall of the casing 90. Further, a bed plate 92 is provided in the frame body 90 to divide the inside of the frame body 90 into a moving region of the wafer W, that is, an upper region and a lower region.

The heating mechanism 30 is configured to heat the wafer W. The heating mechanism 30 includes a support table 31; a top plate portion 32; a lifting mechanism 33; a hot plate 34; a support pin 35; a lifting mechanism 36; an exhaust pipe 37; a heater 38 (thermostat); a temperature sensor 39 (detailed These are a plurality of temperature sensors 39a to 39g (see FIG. 5)).

The support base 31 is a member having a cylindrical shape in which a recessed portion is formed in a central portion. The support base 31 supports the hot plate 34. The top plate portion 32 is a disk-shaped member having the same diameter as the support base 31. The top plate portion 32 faces the support base 31 with a gap therebetween, for example, in a state of being supported by the patio portion of the frame 90. An exhaust pipe 37 is connected to the upper portion of the top plate portion 32. The exhaust pipe 37 performs exhaust in the chamber.

The lifting mechanism 33 is configured to lift and lower the top plate portion 32 in accordance with the control of the controller 100. The ceiling portion 32 is raised by the elevating mechanism 33, and accordingly, the space for heating the wafer W, that is, the chamber is opened, and the ceiling is lowered, and the chamber is closed.

The hot plate 34 is a flat plate (see FIG. 5) having a circular shape, and is fitted into a recessed portion of the support base 31. The hot plate 34 is used for placing a wafer W and supplying heat to the wafer W. The hot plate 34 is heated via a heater 38. The hot plate 34 is heated by a heater 38 in each of a plurality of channels (areas). Inside the hot plate 34, a plurality of temperature sensors 39a to 39g (see FIG. 5) configured to measure the temperature of the hot plate 34 according to each of the plurality of channels are provided.

The heater 38 is a thermostat that heats the hot plate 34. The heater 38 is made of, for example, a resistance heating element. The heater 38 is configured to heat a plurality of channels of the hot plate 34 in accordance with a command temperature set by the controller 100. That is, the heater 38 has a command temperature set for each of the plurality of channels. The command temperature of each channel can be individually changed by the controller 100. The heater 38 heats the hot plate 34 at an output corresponding to the actual temperature of the hot plate 34.

The plurality of temperature sensors 39a to 39g are provided in one-to-one correspondence with the plurality of channels (areas) of the hot plate 34, and the temperature of the hot plate 34 in the corresponding channel is measured. The plurality of temperature sensors 39 a to 39 g may be disposed inside the hot plate 34 or below the hot plate 34. FIG. 5 is a schematic diagram showing an example of the arrangement of a plurality of temperature sensors 39a to 39g in the hot plate 34. In the example shown in FIG. 5, a temperature sensor 39 a is provided near the center of the circular hot plate 34, and four temperature sensors 39 d are provided at approximately equal intervals in the circumferential direction near the outer edge of the hot plate 34. 39e, 39f, 39g, a temperature sensor 39b is provided between the temperature sensor 39a and the temperature sensor 39d in the diameter direction, and a temperature sensor 39a and the temperature sensor 39f are provided between the temperature sensor 39a and the temperature sensor 39f in the diameter direction A temperature sensor 39c is provided.

The support pin 35 is a member that extends so as to penetrate the support table 31 and the hot plate 34 and supports the wafer W from below. The support pin 35 is arranged in a predetermined position by lifting and lowering in the vertical direction. The support pin 35 is configured to transfer the wafer W to and from the temperature adjustment plate 51 that carries the wafer W. Three support pins 35 are provided at regular intervals in the circumferential direction, for example. The lifting mechanism 36 is configured to lift and lower the support pin 35 in accordance with the control of the controller 100.

The temperature adjustment mechanism 50 is configured to transfer (transfer) the wafer W between the hot plate 34 and an external transfer arm A3 (FIG. 3), and adjust the temperature of the wafer W to a predetermined temperature. The temperature adjustment mechanism 50 includes a temperature adjustment plate 51 and a connection bracket 52.

The temperature adjustment plate 51 is a plate for adjusting the temperature of the wafer W to be placed. Specifically, the temperature adjustment plate 51 is a plate for placing the wafer W heated through the hot plate 34 and cooling the wafer W to a predetermined temperature. The temperature adjustment plate 51 is made of, for example, a metal such as aluminum, silver, or copper having a high thermal conductivity, and is preferably made of the same material from the viewpoint of preventing thermal deformation. A cooling flow path (not shown) through which cooling water and / or cooling gas flows is formed inside the temperature adjustment plate 51.

The connection bracket 52 is connected to the temperature adjustment plate 51 and is driven by a drive mechanism 53 controlled by the controller 100 to move inside the housing 90. More specifically, the connection bracket 52 is configured to be movable along a guide rail (not shown) extending from the carrying opening 91 of the housing 90 to the vicinity of the heating mechanism 30. The connection bracket 52 is moved along a guide rail (not shown), so that the temperature adjustment plate 51 can be moved from the loading port 91 to the heating mechanism 30. The connection bracket 52 is made of a metal such as aluminum, silver, or copper having a high thermal conductivity.

The controller 100 is configured to execute, based on each of the plurality of channels of the hot plate 34, the calculated temperature of the temperature sensor 39 (the measurement temperature measured by the temperature sensor 39) and the ideal setting corresponding to the heater 38 The difference between the temperatures is the temperature deviation, and whether the temperature deviation is within the specified normal range, and the abnormal area is defined according to the judgment result (for example, if there is a temperature deviation outside the normal range) In the case of a channel, the channel is defined as an abnormal channel). The controller 100 defines the abnormal area by considering both the temperature offset of the area where the temperature offset is not within the normal range and the temperature offset of the area where the temperature offset is within the normal range.

The controller 100 considers the output of the heaters 38 corresponding to the plurality of channels to define the abnormal channels. If there is a channel in which the difference between the output amount and the normal value is more than a predetermined value among the plurality of channels, the controller 100 defines the channel as an abnormal channel. If it does not exist, the temperature offset is not in the normal range The inner channels are defined as abnormal channels.

After the temperature of the hot plate 34 becomes a constant state, the controller 100 starts to determine whether the temperature deviation amount is within a normal range. While the temperature of the hot plate 34 is constant, the controller 100 continues to determine whether the temperature offset is within the above-mentioned normal range.

The controller 100 sets the normal range to a wider range than the difference between the indication temperature of the temperature sensor 39 and the ideal temperature in the constant state of the hot plate 34 in normal operation.

The controller 100 is configured to further execute the correction control so that the temperature deviation of the abnormal channel becomes within a normal range by changing the command temperature of the heater 38 related to the abnormal channel. After the controller 100 changes the command temperature, the difference between the output of the heater 38 related to the abnormal channel and the output of the heater 38 corresponding to the command temperature in the normal state becomes the first less than a predetermined value. Until the state is changed, the command temperature is changed repeatedly. After being in the first state, the controller 100 determines whether or not to continue the subsequent processing based on the temperature indicated by the temperature sensor 39 in the abnormal channel.

As shown in FIG. 4, the controller 100 includes a transport control unit 101, a determination unit 102, an abnormal passage defining unit 103, and a correction unit 104 as function modules.

The conveyance control unit 101 controls the lifting mechanism 33 so that the chamber is opened / closed by the lifting of the top plate portion 32. In addition, the conveyance control unit 101 controls the elevating mechanism 36 and transfers the wafer W between the temperature adjustment plate 51 and the supporting pin 35 by raising and lowering the supporting pin 35. The transport control unit 101 controls the drive mechanism 53 so that the temperature adjustment plate 51 moves within the housing 90.

The judging unit 102 calculates the difference between the indicated temperature of the temperature sensor 39 and the ideal temperature corresponding to the setting of the heater 38, that is, the temperature offset, according to each of the plurality of channels of the hot plate 34, It is determined whether the temperature deviation amount is within a predetermined normal range (hereinafter referred to as "bandwidth"). The determination unit 102 obtains the indicated temperature from the plurality of temperature sensors 39a to 39g at predetermined time intervals. The ideal temperature corresponding to the setting of the heater 38 refers to a temperature assumed as the temperature of the hot plate 34 (the temperature of the hot plate 34 in the normal state) corresponding to the command temperature set in the heater 38 in advance. The determination unit 102 sets the above-mentioned bandwidth to a range that may vary from the difference between the indicated temperature of the temperature sensor 39 and the ideal temperature in the constant state of the hot plate 34 in normal operation (for example, based on the opening of the chamber / (Closed and may change).

The determination unit 102 starts to determine whether the temperature deviation amount is within the bandwidth after the temperature of the hot plate 34 becomes constant. That is, the judgment unit 102 does not judge the temperature deviation amount during the transition period of the temperature increase control or the temperature reduction control which intends to change the output amount applied to the hot plate 34 at the beginning of the manufacturing process. This judgment is started after the temperature becomes constant. The determination unit 102 continues to determine whether the temperature deviation amount is within the bandwidth while the temperature of the hot plate 34 is constant.

When a channel whose temperature offset is not within the bandwidth exists, the abnormal channel defining section 103 defines the channel as an abnormal channel. The abnormal channel defining unit 103 defines the abnormal channel in consideration of the output of the heater 38 corresponding to each of the plurality of channels. As such, the abnormal channel defining section 103 defines the abnormal channel in consideration of the temperature offset and the output of the heater 38.

Specifically, if there is a channel in which the difference between the output of the heater 38 and the normal state is more than a predetermined value among the plurality of channels, the abnormal channel defining unit 103 defines the channel as an abnormal channel (defining processing 2). In the absence, the channel whose temperature offset is not within the bandwidth is defined as an abnormal channel (definition processing 1).

An example of the temperature shift mechanism in the case where the above-mentioned definition processing 1 is performed will be described with reference to FIG. 6 (a). In FIG. 6 (a), the two channels (CH1 and CH2) respectively indicate the temperature (the measurement temperature measured by the temperature sensor 39a corresponding to CH1 and the measurement measured by the temperature sensor 39b corresponding to CH2). Temperature) and actual temperature, the vertical axis shows temperature, and the horizontal axis shows time. In FIG. 6 (a), a normal state ST1, a rising first state ST2, and a rising second state ST3 are shown along the passage of time.

In the normal state ST1 shown in FIG. 6 (a), the indicated temperature and actual temperature of both channels are set around 400 ° C. From this state, for example, when the resistance of the temperature sensor 39a increases due to a partial disconnection in the temperature sensor 39a, the temperature indicated by CH1 deviates from the actual temperature and becomes around 430 ° C, and only the temperature indicated by CH1 rises. First state ST2. In this case, since the command temperature corresponding to CH1 in the heater 38 changes the temperature of CH1 toward a decrease in the amount of increase, it becomes the second state ST3 of the increase in the indicated temperature and actual temperature of CH1. However, due to the influence of the temperature of CH2 close to CH1, in the rising second state ST3, the indicated temperature of CH1 has not decreased to the original 400 ° C. In the rising second state ST3, the effect of the actual temperature decrease of CH1 also affects CH2, and the indicated temperature and actual temperature of CH2 also decrease slightly (in a smaller range than that of CH1).

Compared with the normal state ST1, in the rising second state ST3, the actual temperatures of CH1 and CH2 are both reduced, so there is no channel in which the output of the heater 38 that changes correspondingly to the actual temperature becomes prominent and becomes large. Moreover, in the rising second state ST3, the temperature of CH1 indicates that the temperature has risen (that is, the amount of temperature deviation has increased), and the actual temperature has dropped significantly (that is, it has become an abnormal channel). Based on the above, if there is no channel where the difference between the output and normal time exceeds the specified value, the definition process 1 is performed. By defining the channel whose temperature deviation is not within the bandwidth as an abnormal channel, it can be appropriately defined. Abnormal channel.

An example of the temperature shift mechanism in the case where the above-mentioned definition processing 2 is performed will be described with reference to FIG. 6 (b). In FIG. 6 (b), the two channels (CH1 and CH2) respectively indicate the temperature (the measurement temperature measured by the temperature sensor 39a corresponding to CH1 and the measurement measured by the temperature sensor 39b corresponding to CH2). Temperature) and actual temperature, the vertical axis represents temperature, and the horizontal axis represents time. In FIG. 6 (b), the normal state ST101 (the state shown on the left), the first state ST102 (the state shown in the center), and the second state ST103 (the state shown on the right) are lowered along the passage of time.

In the normal state ST101 shown in FIG. 6 (b), the indicated temperature and actual temperature of both channels are set around 400 ° C. From this state, if the resistance value of the temperature sensor 39a decreases, the temperature indicated by CH1 deviates from the actual temperature and becomes around 370 ° C, and becomes the first state ST102 where the temperature indicated by CH1 decreases. In this case, since the command temperature corresponding to CH1 in the heater 38 is changed in the direction of increasing the temperature of CH1 by the amount of decrease, it becomes the second state ST103 where the indicated temperature and actual temperature of CH1 have increased. However, due to the influence of the temperature of CH2, which is close to CH1, in the lowering of the second state ST103, the indicated temperature of CH1 has not increased to the original 400 ° C. In addition, in the reduction of the second state ST103, the effect of the actual temperature increase of CH1 also affects CH2, and the indicated temperature and actual temperature of CH2 also increase slightly (smaller than that of CH1).

Compared with the normal state ST1, in the lowered second state ST103, the actual temperature of CH1 significantly increases (becomes an abnormal channel), and the output of the heater 38 corresponding to CH1 becomes prominent and becomes large. In addition, in the second state ST103, the indication temperature of CH2 becomes higher than the indication temperature of CH1 (that is, the temperature shift amount of CH2 becomes larger). Based on the above, in the case where there is a channel whose difference between the output and normal time is greater than a predetermined value, the definition process 2 is performed, and the channel with a larger output is not defined as an abnormal channel instead of a channel with a large temperature offset. Channels, from which anomalous channels can be appropriately defined.

The definition of the abnormal channel in the case where the definition processing 1 and the definition processing 2 are performed is described with reference to FIG. 7. The 7 channels (CH1 to CH7) shown in FIG. 7 correspond to CH1 to CH7 shown in FIG. 5. That is, the temperature sensors 39 corresponding to CH1 to CH7 shown in FIG. 7 are the temperature sensors 39a to 39g shown in FIG. 5, respectively. The "CH1 operation" shown in Fig. 7 means that the actual temperature of CH1 is increased or decreased. The same applies to "CH2 operation" and "CH4 operation", which means that the actual temperature of CH2 (or CH4) is increased or decreased.

FIG. 7 shows nine graphs of the graphs g1 to g9. Graphs g1 to g3 show the temperature offset of each channel when the actual temperature of each channel is changed. In detail, the graph g1 represents the temperature deviation of each channel when the actual temperature of CH1 is increased by 20 ° C and the temperature is decreased by 20 ° C, and the graph g2 represents the channels when the actual temperature of CH2 is increased by 20 ° C and decreased by 20 ° C. The temperature offset, the graph g3 shows the temperature offset of each channel when the actual temperature of CH4 is increased by 20 ° C and when it is decreased by 20 ° C. Graphs g4 to g6 show the output of each channel (the output of the heater 38) when the actual temperature of each channel is changed, and the output of each channel when the actual temperature is not changed. In detail, the graph g4 shows the output of each channel when the actual temperature of CH1 is increased by 20 ° C and the output is reduced when it is 20 ° C, and the graph g5 is shown when the actual temperature of CH2 is increased by 20 ° C and decreased by 20 ° C. The output of each channel at normal time and the output at normal time, chart g6 shows the output of each channel when the actual temperature of CH4 is increased by 20 ° C and decreased at 20 ° C, and the output is normal. In addition, the graphs g7 to g9 show the output difference (output difference between the normal time when the temperature does not change) of each channel when the actual temperature of each channel is changed. In detail, graph g7 shows the difference in output when the actual temperature of CH1 is increased by 20 ° C and decreased by 20 ° C, and graph g8 shows the difference in output when the actual temperature of CH2 is increased by 20 ° C and decreased by 20 ° C, and graph g9 It indicates the difference between the output when the actual temperature of CH4 is increased by 20 ° C and when it is decreased by 20 ° C.

As shown in graphs g1 to g3 of Figure 7, when the actual temperature is reduced by 20 ° C (when graphs g1 to g3 are represented by "20 ° C"), the temperature deviation of the channel that is the abnormal channel is changed by changing the actual temperature. . In the example shown in FIG. 7, for example, by setting the bandwidth to 1.5 ° C., it is possible to extract only abnormal channels that have actually changed in temperature. On the other hand, as shown in the graphs g1 to g3 of FIG. 7, when the actual temperature rises by 20 ° C. (in the case of “-20 ° C.” in the graphs g1 to g3), the temperature deviation amount outside the channel that changes the actual temperature changes. Big. For example, in the graph g1, the temperature offsets of CH2 and CH3 near CH1 (see FIG. 5) become larger. From this, it can be known that there is a case where the abnormal channel cannot be defined only by the temperature deviation amount.

As shown in the graphs g4 to g6 of Fig. 7, when the actual temperature is increased by 20 ° C (in the case of "-20 ° C" in the graphs g4 to g9), the output of the channel which is the abnormal channel is changed by changing the actual temperature. In this case, as shown in the graphs g7 to g9 of FIG. 7, the difference between the output and the output at normal time becomes larger on a channel that is an abnormal channel by changing the actual temperature. In the example shown in FIG. 7, for example, the predetermined value for determining whether the difference between the output amount and the normal value is greater than a predetermined value is set to about 20% of the output amount. Based on this, it is possible to extract only the abnormal channel of actual temperature change (see Graphs g7 to g9 in Figure 7).

As can be seen from the above, the abnormal channel defining unit 103 defines a channel as an abnormal channel (definition processing 2) if there is a channel in which the difference between the output and the normal time is more than a predetermined value among a plurality of channels (definition processing 2). In this case, a channel whose temperature deviation is not within the bandwidth is defined as an abnormal channel (definition processing 1), and the abnormal channel can be defined with high accuracy based on this.

The correction unit 104 performs correction control so that the temperature deviation of the abnormal channel becomes within a normal range by changing the command temperature of the heater 38 related to the abnormal channel. Specifically, the correction unit 104 obtains the temperature of the hot plate 34 from the temperature sensor 39 of the channel defined as the abnormal channel by the abnormal channel defining unit 103, and changes the heater so as to change the temperature in the direction of improving the temperature abnormality. 38 command temperature. The correction unit 104 repeats the change of the command temperature until the command temperature is changed to the first state, which is the output of the heater 38 related to the abnormal channel and the normal state. The difference between the output amounts of the heater 38 corresponding to the command temperature is smaller than a predetermined value. After the correction unit 104 enters the first state described above, it determines whether or not to continue the subsequent processing based on the temperature indicated by the temperature sensor 39 in the abnormal channel. Specifically, the correction unit 104 continues the subsequent processing if the indicated temperature obtained from the temperature sensor 39 of the abnormal channel is close to the ideal temperature of the channel, and suspends the subsequent processing if it is not close. It has nothing to do with the first state (the output is normal, and the actual temperature is correctly corrected to be close to the ideal temperature). When the temperature indicated by the temperature sensor 39 deviates from the ideal temperature, that is, when the temperature sensor 39 cannot operate normally, it is suspended. The subsequent treatment is better.

The controller 100 is composed of one or a plurality of control computers. For example, the controller 100 includes a circuit 120 shown in FIG. 8. The circuit 120 includes: one or more processors 121; a memory 122; a storage device 123; an input / output port 124; and a timer 125.

The input / output port 124 performs input / output of electrical signals between the lifting mechanisms 33 and 36, the driving mechanism 53, the temperature sensor 39, and the heater 38. The timer 125 counts, for example, a reference pulse of a certain period and measures the elapsed time. The storage device 123 is, for example, a recording medium that can be read by a computer, such as a hard disk. A program that executes a substrate processing sequence described later is recorded on the recording medium. The recording medium may be a removable medium such as a nonvolatile semiconductor memory, a magnetic disk and an optical disk. The memory 122 temporarily stores a program downloaded from a recording medium of the storage device 123 and a calculation result of the processor 121. The processor 121 operates together with the memory 122 to execute the above-mentioned programs to constitute each of the functional modules.

The hardware configuration of the controller 100 is not necessarily limited to those in which each functional module is configured by a program. For example, each functional module of the controller 100 may be constituted by an application specific integrated circuit (ASIC) integrated with a used logic circuit.

[Substrate processing sequence]
Next, an example of a substrate processing method will be described with reference to FIG. 9, that is, a substrate processing sequence executed by the heat treatment unit U2 in accordance with the control of the controller 100. The sequence of substrate processing shown in FIG. 9 is executed in parallel with other substrate processing, and is continued while the temperature of the hot plate 34 is constant.

In the processing shown in FIG. 9, the first step S1 is executed. In step S1, the controller 100 determines whether a channel (abnormal channel) indicating that the temperature is abnormal exists. Specifically, the controller 100 calculates the difference between the indicated temperature of the temperature sensor 39 and the ideal temperature corresponding to the setting of the heater 38, that is, the temperature deviation amount, according to each of the plurality of channels of the hot plate 34. It is determined whether the temperature offset is within a specified bandwidth, and if there is a channel not in the bandwidth, it is determined that an abnormal channel exists.

Next, step S2 is performed. In step S2, the controller 100 determines whether there is a channel with a large increase in output. Specifically, the controller 100 determines whether there is a channel in which the difference between the output amount and the normal amount is equal to or greater than a predetermined value among the plurality of channels. In step S2, if it is determined that there is a channel where the difference between the output amount and normal time is greater than a predetermined value, step S3 is performed, and if it is determined that there is no channel, step S4 is performed.

In step S3, the controller 100 defines a channel having a large increase in the output amount (the difference between the output amount and the normal time becomes a predetermined value or more) as an abnormal channel. In step S4, the controller 100 defines a channel (temperature offset channel) that is judged to have a temperature offset not within the bandwidth as an abnormal channel.

Next, step S5 is performed. In step S5, the controller 100 performs correction control. The above is an example of a substrate processing sequence.

Step 5 (correction control) of the substrate processing sequence will be described in detail with reference to FIG. 10. In the processing shown in FIG. 10, the first step S51 is executed. In step S51, the controller 100 changes the commanded temperature of the heater 38 related to the abnormal channel. Specifically, the correction unit 104 obtains the temperature of the hot plate 34 by the temperature sensor 39 of the channel defined as the abnormal channel by the abnormal channel defining unit 103, and changes the commanded temperature of the heater 38 so that the temperature changes in the direction of improving the temperature abnormality. .

Next, step S52 is performed. In step S52, the controller 100 determines whether a predetermined time has elapsed since the commanded temperature change in step S51 (whether a predetermined stable time has been waited). If it is determined in step S52 that the predetermined time has elapsed, step S53 is performed, and if it has not elapsed, step S52 is performed again.

In step S53, the controller 100 determines whether the output volume (current output volume) MV of the heater 38 related to the abnormal channel and the above-mentioned command temperature at the normal time (that is, the command temperature before the change in step S51). The first state where the difference between the output of the heater 38 (the output of the normal state) MV´ is less than the specified value is determined. If it is determined in step S53 that the state has not reached the first state, the process of step S51 is performed again. On the other hand, if it is the first state in step S53, step S54 is executed.

In step S54, the controller 100 determines whether the difference between the indicated temperature PV obtained from the temperature sensor 39 of the abnormal channel and the ideal temperature SV of the channel is smaller than a predetermined value. If it is determined in step S54 that the value is smaller than a predetermined value (that is, the temperature PV is close to the ideal temperature SV), the controller 100 determines that the processing is normal and continues the subsequent processing (step S55). On the other hand, if it is determined in step S54 that the value is not less than the predetermined value, the controller 100 determines that the processing is abnormal and terminates subsequent processing (step S56). The above is an example of the correction control processing.

[Effect]
The heat treatment unit U2 includes a hot plate 34 that mounts the wafer W and supplies heat to the wafer W, a heater 38 that heats the hot plate 34, and is provided corresponding to a plurality of channels of the hot plate 34, and is provided on the hot plate. A plurality of temperature sensors 39a to 39g for measuring the temperature of 34; and a controller 100, and the controller 100 is configured to execute the following: calculate the indicated temperature of the temperature sensor 39 and the heater for each of the plurality of channels The difference between the ideal temperature corresponding to the setting of 38 is the temperature offset, and whether the temperature offset is within the specified bandwidth, and the abnormal area is defined according to the judgment result (for example, when the temperature offset is not in the bandwidth If there is an internal channel, the channel is defined as an abnormal area).

In the heat treatment unit U2, temperature sensors 39 are provided corresponding to the plurality of channels of the hot plate 34, respectively. According to each of the plurality of channels, a judgment is made as to whether the difference between the temperature and the ideal temperature, that is, the temperature offset is within the bandwidth, and the abnormal channel is defined according to the result of the judgment. In this way, the temperature sensors 39a to 39g are set for each of the plurality of channels, and whether the temperature offset is within the bandwidth is determined for each of the plurality of channels. The determination result is used to define the abnormal channel, so it can be considered The temperature conditions (the presence or absence of temperature anomalies) of the multiple channels define the abnormal channels. By considering the temperature conditions of each channel, for example, compared with the case where only one temperature sensor is installed in the entirety, it is possible to accurately define an abnormal channel (an area where a bad condition occurs) that causes a temperature abnormality.

The controller 100 may consider both the temperature offset of the channel whose temperature offset is not within the bandwidth and the temperature offset of the channel whose temperature offset is within the bandwidth to define the abnormal channel. For example, consider the case where the representation temperature of one of the two channels is higher than the representation temperature of the other channel, and the temperature offset of only one of the channels is judged to be out of the bandwidth. In this case, for example, it is estimated that the actual temperature of one of the two channels is lower than normal. Considering that when the actual temperature decreases in the channel of the other party (the channel whose temperature offset is within the bandwidth) is considered, the temperature offset of the other channel is within the bandwidth, and the thermal influence of the other channel will not be excessive In the above-mentioned state (the state where only the temperature offset of one channel is not within the bandwidth), the control by the heater 38 is appropriately performed so that the temperature offset of one channel is within the bandwidth. Unstable. Therefore, consider that the actual temperature in the other channel has not decreased. On the other hand, if the actual temperature of one of the channels (the channel whose temperature deviation is not within the bandwidth is determined) is reduced, the temperature of one of the channels should be reduced based on the heater 38 even if it corresponds to the indicated temperature of one of the channels. In the case of control (when the output of the heater 38 corresponding to one channel is set to zero, for example), the actual temperature is pulled up due to the thermal influence of the other channel, and the pull up The amount correspondingly indicates that the temperature also rises, and the state where the temperature deviation amount is not within the bandwidth may continue. Therefore, if the temperature deviation of one channel is judged to be outside the bandwidth under the condition that the actual temperature decreases, and the temperature deviation of the other channel is within the bandwidth, the actual temperature will decrease in one channel. , And this channel can be defined as an abnormal channel. As such, by considering the temperature offset of the channel whose temperature offset is not within the bandwidth and the temperature offset of the channel which is within the bandwidth, the abnormal channel can be properly defined.

The controller 100 defines the abnormal channels by considering the output of the heaters 38 corresponding to the channels. For example, in the case of temperature control for an abnormal channel, the influence of the temperature control will also affect the area outside the abnormal channel, which may cause the temperature offset of the channel other than the abnormal channel to become outside the bandwidth. When the temperature offset outside the abnormal channel is out of the bandwidth, the abnormal channel cannot be uniquely defined only by the temperature offset. Here, the output of the heater 38 is changed in accordance with the actual temperature of the hot plate 34. Therefore, by the controller 100 considering the output of the heater 38 to define the abnormal channel, a channel (ie, an abnormal channel) in which the actual temperature changes greatly can be appropriately defined for proper definition. That is, by defining an abnormal channel in consideration of an output amount, it is possible to define a channel where a temperature abnormality occurs with higher accuracy.

The controller 100 defines a channel as an abnormal channel if there is a channel in which the difference between the output amount and the normal value is more than a predetermined value among a plurality of channels, and if it does not exist, the temperature offset is not in the bandwidth The inner channels are defined as abnormal channels.

For example, as a result of the bad condition of the temperature sensor 19, the measured temperature of the temperature sensor 19 deviates from the actual temperature of the hot plate 34, a condition indicating that the temperature is higher than the actual temperature (indicating that the temperature rises) Condition), and a condition indicating that the temperature is lower than the actual temperature (a condition indicating a decrease in temperature). In the case of indicating a temperature rise, if the setting of the heater 38 is changed (changed in the direction of decreasing the temperature) according to the indicated temperature, the indicated temperature and the actual temperature of the channel (indicating the temperature rising channel) corresponding to the heater 38 will decrease. The effect of the actual temperature decrease in the channel indicating temperature rise will also affect other channels, and the expressed temperature and actual temperature of other channels will decrease slightly (in a smaller range than the channel indicating temperature increase). In this way, in the case of indicating the temperature rise, compared to other channels, the temperature in the channel indicating the temperature rise becomes higher, and the output temperature becomes smaller as the actual temperature decreases. In the case of indicating the temperature rise, in any of the channels indicating the temperature rise and the other channels, the actual temperature decreases and the output decreases, so there is no larger difference between the output from normal channels and the output during normal time. aisle. Moreover, the actual temperature is lower than that of other channels and may become an abnormal temperature indicating a rising temperature channel. Compared with other channels, its indicating temperature becomes higher and the temperature deviation amount becomes larger. As can be seen from the above, when there is no channel with a large difference in output from normal, by defining a channel with a larger temperature offset (not within the bandwidth) as an abnormal channel, it is possible to accurately define the temperature abnormality. aisle. In addition, when the display temperature is lowered, when the display temperature is changed according to the setting of the heater 38 (changed in the direction of rising temperature), the display temperature and the actual temperature of the channel (display temperature decrease channel) corresponding to the heater 38 are increased. In addition, the effect of the actual temperature rise in the temperature decrease channel also affects other channels, and the temperature and real temperature of the other channels also increase slightly (by a smaller amount than the temperature decrease channel). In this way, when the temperature is reduced, compared with other channels, the temperature in the lower channel indicates that the temperature becomes lower, and the actual temperature rise causes the output to increase. The output of the temperature-reduced channel that is likely to become an abnormal channel under the condition that the temperature is reduced is more prominent and larger than the other channels. The other channels indicate that the temperature is higher than the temperature decreasing channel (that is, the temperature offset becomes larger). From the above, when there is a channel with a large difference in output, instead of defining a channel with a large temperature deviation, a channel with a large difference from the normal output is defined as an abnormal channel. , Can define the channel with high temperature abnormality.

After the temperature of the hot plate 34 becomes a constant state, the controller 100 starts to determine whether the temperature deviation amount is within a normal range. According to this, the determination of the temperature deviation amount is not performed during the transition period such as the temperature rise control when the output amount of the heater 38 applied to the hot plate 34 is intended to be changed, and the definition of the abnormal channel can be limited to a necessary period (a period of a constant state) ) Perform the process of defining the abnormal channel.

The controller 100 sets the normal range to a wider range that may vary than the difference between the indicated temperature of the temperature sensor 39 and the ideal temperature in the constant state of the hot plate 34 which is a normal operation. According to this, for example, when the wafer W is carried in (when the chamber is opened) during the operation of the device after the constant state is reached, and the temperature is fluctuated, it can be prevented that the temperature deviation is not determined. Within the bandwidth. That is, the above-mentioned control can prevent the normal process from being hindered.

The heater 38 is configured to heat a plurality of channels in accordance with a preset command temperature, and the controller 100 is configured to further execute the command temperature of the heater 38 related to the abnormal channel to change the temperature of the abnormal channel. Correction control is performed so that the shift amount becomes within the normal range. By changing the commanded temperature set in the heater 38, it is possible to easily and appropriately correct the temperature offset of the abnormal channel.

The controller 100 continues to change the command temperature until the first state is changed after the command temperature is changed. The first state is that the output of the heater 38 related to the abnormal channel is the same as that of the normal state. The difference between the output of the heater 38 corresponding to the temperature is smaller than a predetermined value. For example, in a case where the indication temperature of the partially disconnected temperature sensor 19 deviates from the actual temperature of the hot plate 34, it may be considered that the indication temperature of the temperature sensor 19 is incorrect. Even in such a case, it is judged whether the output corresponding to the actual temperature is normal, and if it is abnormal, the process of changing the command temperature is repeated, and it can be determined without relying on the correctness of the temperature indicated by the temperature sensor 19 Correct the abnormal temperature.

The controller 100 determines whether it is possible to continue the subsequent processing based on the temperature indicated by the temperature sensor 39 in the abnormal channel after the first state. After the first state is reached and the temperature abnormality is corrected (that is, the actual temperature is correct), it is judged whether the indicated temperature of the temperature sensor 19 of the channel which is the abnormal channel is correct, and based on this, it is possible to appropriately judge whether it is possible Processing is continued using this temperature sensor 19.

The controller 100 continues to determine whether the temperature deviation amount is within the above-mentioned normal range while the temperature of the hot plate 34 is constant. The detection of the abnormal channel is continued during the constant state. According to this, the unnecessary action of the detection of the abnormal channel is unnecessary, and the abnormal channel detection can be performed without affecting the normal device operation formula.

As mentioned above, although embodiment was described, this indication is not limited to the said embodiment.

For example, consider the case where the abnormal channel is defined by considering the output of the heater 38, but in the case that the abnormal channel can be defined only by the temperature offset, it is not dependent on the output of the heater 38 but only by the temperature offset It is also possible to define abnormal channels.

2‧‧‧ Coating / Development Device (Substrate Processing Device)

34‧‧‧ hot plate

38‧‧‧heater (thermostat)

39a, 39b, 39c, 39d, 39e, 39f, 39g‧‧‧Temperature sensors

100‧‧‧ Controller (Control Department)

W‧‧‧ Wafer (substrate)

FIG. 1 is a perspective view showing a schematic configuration of a substrate processing system.

[FIG. 2] A sectional view taken along the line II-II in FIG. 1. [FIG.

[FIG. 3] A sectional view taken along the line III-III in FIG. 2. [FIG.

4 is a schematic longitudinal sectional view showing an example of a heat treatment unit.

[Fig. 5] A schematic diagram showing the arrangement of a temperature sensor in a hot plate.

[Fig. 6] A diagram explaining a temperature shift mechanism.

[Figure 7] A graph showing the temperature offset and output of each channel of each channel.

[Fig. 8] Hardware configuration diagram of the controller.

[Figure 9] A flowchart of substrate processing.

[Fig. 10] Flow chart of correction control.

Claims (21)

A substrate processing apparatus includes: A hot plate for placing a substrate and applying heat to the substrate; Thermostat to heat the hot plate; A plurality of temperature sensors are provided corresponding to the plurality of areas of the hot plate, and the temperature of the hot plate is measured; and Control department The control unit is configured to execute the following: According to each of the plurality of regions, calculate the difference between the measured temperature of the temperature sensor and the ideal temperature corresponding to the setting of the thermostat, that is, the temperature offset, and whether the temperature offset is within the prescribed Judgement within normal limits, and The abnormal area is defined according to the judgment result. For example, the substrate processing device of the scope of patent application, where The control unit considers both the temperature shift amount in a region where the temperature shift amount is not in the normal range, and the temperature shift amount in a region where the temperature shift amount is in the normal range, and detects the abnormality. Areas are defined. For example, the substrate processing device of the scope of patent application 1 or 2, The control unit considers the output of the thermostat corresponding to each of the plurality of regions to define the abnormal region. For example, the substrate processing device in the scope of patent application No. 3, in which In the case where there is an area where the difference between the output amount and the normal time is greater than a predetermined value among the plurality of areas, the control unit defines the area as the abnormal area, and when it does not exist, sets the temperature The area where the offset is not within the above-mentioned normal range is defined as the above-mentioned abnormal area. For example, the substrate processing device of the scope of patent application 1 or 2, The control unit starts to determine whether the temperature deviation amount is within the normal range after the temperature of the hot plate becomes constant. For example, the substrate processing device of the scope of patent application 1 or 2, The control unit sets the normal range to a wider range that may vary than a difference between the measured temperature and the ideal temperature in a constant state of the hot plate which is a normal operation. For example, the substrate processing device of the scope of patent application 1 or 2, The thermostat is configured to heat the plurality of regions in accordance with a preset command temperature, The control unit is configured to further execute, By changing the command temperature related to the abnormal region, the correction control is performed so that the temperature deviation amount of the abnormal region falls within the normal range. For example, the substrate processing device in the scope of patent application No. 7 The control unit repeats the change of the command temperature until the command temperature is changed to a first state, where the first state is the output of the thermostat related to the abnormal region, and when normal The difference between the output of the thermostat corresponding to the command temperature is smaller than a predetermined value. For example, the substrate processing device of the scope of patent application No. 8 in which After the control unit enters the first state, the control unit determines whether or not to continue the subsequent processing based on the measured temperature in the abnormal region. For example, the substrate processing device of the scope of patent application 1 or 2, The control unit continues to determine whether the temperature deviation amount is within the normal range while the temperature of the hot plate is constant. A substrate processing method includes: Calculation of the difference between the measured temperature of a plurality of areas of a hot plate that applies heat to the substrate and the ideal temperature of the plurality of areas, i.e., the temperature offset, and a process to determine whether the temperature offset is within a specified normal range ;and Engineering that defines anomalous areas based on judgment results. For example, the substrate processing method in the scope of application for patent No. 11 In the process of defining the abnormal area, the temperature offset of the area where the temperature offset is not within the normal range, and the temperature offset of the area where the temperature offset is within the normal range are considered. Both sides define the abnormal area. For example, for the substrate processing method in the scope of patent application No. 11 or 12, In the engineering for defining the above-mentioned anomalous areas, the output of the thermostat corresponding to the above-mentioned areas is taken into consideration to define the above-mentioned anomalous areas. For example, the application of the substrate processing method in the scope of the patent No. 13 In the process of defining the abnormal area, if there is an area in which the difference between the output and normal time is greater than a predetermined value in the plurality of areas, the area is defined as the abnormal area and does not exist. In this case, a region where the temperature deviation amount is not within the normal range is defined as the abnormal region. For example, for the substrate processing method in the scope of patent application No. 11 or 12, After the temperature of the hot plate becomes constant, the above-mentioned judgment process is started. For example, for the substrate processing method in the scope of patent application No. 11 or 12, The normal range is set to a wider range that may vary than the difference between the measured temperature and the ideal temperature in the constant state of the hot plate which is a normal operation, and the judgment process is performed. For example, for the substrate processing method in the scope of patent application No. 11 or 12, It further includes a process of performing correction control such that the temperature deviation amount of the abnormal region falls within the normal range by changing the command temperature of the thermostat that heats the hot plate. For example, the substrate processing method in the scope of patent application No. 17 In the process of performing the above-mentioned correction control, after the change of the command temperature, the change of the command temperature is repeated until the first state is reached. The first state is the output of the thermostat related to the abnormal region. A state in which the difference between the output of the thermostat corresponding to the command temperature in the normal state is smaller than a predetermined value. For example, the substrate processing method of the scope of application for patent No. 18, in which In the process of performing the above-mentioned correction control, after the above-mentioned first state is reached, it is determined whether the subsequent processing can be continued based on the measured temperature of the abnormal region. For example, for the substrate processing method in the scope of patent application No. 11 or 12, During the period when the temperature of the hot plate is constant, the above-mentioned judgment process is continued. A computer-readable memory medium stores a program for causing a device to execute a substrate processing method according to any one of claims 11 to 20 of a patent application.